CA1023011A - Integrated circuits - Google Patents

Integrated circuits

Info

Publication number
CA1023011A
CA1023011A CA216,024A CA216024A CA1023011A CA 1023011 A CA1023011 A CA 1023011A CA 216024 A CA216024 A CA 216024A CA 1023011 A CA1023011 A CA 1023011A
Authority
CA
Canada
Prior art keywords
integrated circuits
circuits
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA216,024A
Other languages
French (fr)
Other versions
CA216024S (en
Inventor
Alan W. Sinclair
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA1023011A publication Critical patent/CA1023011A/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233Integrated injection logic structures [I2L]
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/289Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable of the master-slave type
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B10/00Static random access memory [SRAM] devices
    • H10B10/10SRAM devices comprising bipolar components

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Shift Register Type Memory (AREA)
CA216,024A 1973-12-21 1974-12-12 Integrated circuits Expired CA1023011A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB59462/73A GB1494481A (en) 1973-12-21 1973-12-21 Electrical circuits comprising master/slave bistable arrangements

Publications (1)

Publication Number Publication Date
CA1023011A true CA1023011A (en) 1977-12-20

Family

ID=10483808

Family Applications (1)

Application Number Title Priority Date Filing Date
CA216,024A Expired CA1023011A (en) 1973-12-21 1974-12-12 Integrated circuits

Country Status (8)

Country Link
US (1) US3993918A (en)
JP (1) JPS5317853B2 (en)
AU (1) AU498031B2 (en)
CA (1) CA1023011A (en)
DE (1) DE2459562B2 (en)
FR (1) FR2255709B1 (en)
GB (1) GB1494481A (en)
IT (1) IT1027799B (en)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2442773C3 (en) * 1974-09-06 1978-12-14 Deutsche Itt Industries Gmbh, 7800 Freiburg Integrated master-slave flip-flop circuit
JPS597245B2 (en) * 1975-12-01 1984-02-17 株式会社東芝 hand dryer warmer
NL7606193A (en) * 1976-06-09 1977-12-13 Philips Nv INTEGRATED CIRCUIT.
FR2356314A1 (en) * 1976-06-22 1978-01-20 Radiotechnique Compelec INTEGRATED LOGIC THRESHOLD CIRCUIT WITH HYSTERESIS
US4197470A (en) * 1976-07-15 1980-04-08 Texas Instruments Incorporated Triggerable flip-flop
US4150392A (en) * 1976-07-31 1979-04-17 Nippon Gakki Seizo Kabushiki Kaisha Semiconductor integrated flip-flop circuit device including merged bipolar and field effect transistors
NL7612222A (en) * 1976-11-04 1978-05-08 Philips Nv INTEGRATED CIRCUIT.
US4072869A (en) * 1976-12-10 1978-02-07 Ncr Corporation Hazard-free clocked master/slave flip-flop
US4160173A (en) * 1976-12-14 1979-07-03 Tokyo Shibaura Electric Co., Ltd. Logic circuit with two pairs of cross-coupled nand/nor gates
US4085341A (en) * 1976-12-20 1978-04-18 Motorola, Inc. Integrated injection logic circuit having reduced delay
FR2404962A1 (en) * 1977-09-28 1979-04-27 Ibm France SEMICONDUCTOR DEVICE OF THE BISTABLE CELL TYPE IN CURRENT INJECTION TECHNOLOGY, CONTROLLED BY THE INJECTOR
US4163244A (en) * 1977-10-28 1979-07-31 General Electric Company Symmetrical integrated injection logic circuit
DE2805217C3 (en) * 1978-02-08 1980-11-20 Deutsche Itt Industries Gmbh, 7800 Freiburg Monolithically integrated I2 L circuit for a two-phase shift register
US4200811A (en) * 1978-05-11 1980-04-29 Rca Corporation Frequency divider circuit
JPS5570133A (en) * 1978-11-21 1980-05-27 Toshiba Corp Divider circuit
FR2458951A1 (en) * 1979-06-12 1981-01-02 Thomson Csf Weighted transitions in integrated injection logic circuits - by using gate transistor with multiple collectors controlling other gates sequentially
DE2926050C2 (en) * 1979-06-28 1981-10-01 Ibm Deutschland Gmbh, 7000 Stuttgart Method and circuit arrangement for reading and / or writing an integrated semiconductor memory with memory cells using MTL technology
WO1981000332A1 (en) * 1979-07-19 1981-02-05 Motorola Inc Bistable circuit and shift register using integrated injection logic
DE2943565C2 (en) * 1979-10-29 1981-11-12 Ibm Deutschland Gmbh, 7000 Stuttgart Memory cell simulation for reference voltage generation for semiconductor memories in MTL technology
FR2469049A1 (en) * 1979-10-30 1981-05-08 Ibm France CIRCUIT COMPRISING AT LEAST TWO SEMICONDUCTOR DEVICES IN MTL TECHNOLOGY HAVING DIFFERENT RISE TIMES AND LOGIC CIRCUITS DERIVATIVE
DE2944141A1 (en) * 1979-11-02 1981-05-14 Ibm Deutschland Gmbh, 7000 Stuttgart MONOLITHICALLY INTEGRATED STORAGE ARRANGEMENT
US4491745A (en) * 1982-08-12 1985-01-01 Motorola, Inc. TTL flip-flop with clamping diode for eliminating race conditions
US4591737A (en) * 1982-12-13 1986-05-27 Advanced Micro Devices, Inc. Master-slave multivibrator with improved metastable response characteristic
US4604534A (en) * 1984-12-03 1986-08-05 International Business Machines Corporation Highly sensitive high performance sense amplifiers
DE58908419D1 (en) * 1989-08-16 1994-10-27 Itt Ind Gmbh Deutsche Two-phase controlled shift register in bipolar technology.
US20040050135A1 (en) * 2002-09-18 2004-03-18 Launius William E. Axle straightening press
US7836740B2 (en) * 2002-09-18 2010-11-23 Launius Jr William E Axle straightening press

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3440449A (en) * 1966-12-07 1969-04-22 Motorola Inc Gated dc coupled j-k flip-flop
US3591856A (en) * 1967-11-07 1971-07-06 Texas Instruments Inc J-k master-slave flip-flop

Also Published As

Publication number Publication date
JPS5317853B2 (en) 1978-06-12
AU7667774A (en) 1976-06-24
DE2459562A1 (en) 1975-07-03
FR2255709B1 (en) 1978-03-24
GB1494481A (en) 1977-12-07
US3993918A (en) 1976-11-23
IT1027799B (en) 1978-12-20
AU498031B2 (en) 1979-02-01
DE2459562B2 (en) 1979-11-29
JPS50107846A (en) 1975-08-25
FR2255709A1 (en) 1975-07-18

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