CA1031673A - Method of making n-type amorphous semiconductor material - Google Patents
Method of making n-type amorphous semiconductor materialInfo
- Publication number
- CA1031673A CA1031673A CA201,660A CA201660A CA1031673A CA 1031673 A CA1031673 A CA 1031673A CA 201660 A CA201660 A CA 201660A CA 1031673 A CA1031673 A CA 1031673A
- Authority
- CA
- Canada
- Prior art keywords
- making
- semiconductor material
- amorphous semiconductor
- type amorphous
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000463 material Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
- H01L29/263—Amorphous materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/375,794 US3983076A (en) | 1973-07-02 | 1973-07-02 | N-type amorphous semiconductor materials |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1031673A true CA1031673A (en) | 1978-05-23 |
Family
ID=23482373
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA201,660A Expired CA1031673A (en) | 1973-07-02 | 1974-06-04 | Method of making n-type amorphous semiconductor material |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3983076A (en) |
| JP (1) | JPS5039467A (en) |
| CA (1) | CA1031673A (en) |
| DE (1) | DE2429507A1 (en) |
| GB (1) | GB1477670A (en) |
| IT (1) | IT1025022B (en) |
| NL (1) | NL7408935A (en) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5846452B2 (en) * | 1976-02-20 | 1983-10-17 | 株式会社日立製作所 | Vapor deposition method of yalium oxide thin film for image pickup tube photoelectric conversion target |
| JPS585849B2 (en) * | 1976-02-20 | 1983-02-02 | 株式会社日立製作所 | Method for depositing cerium oxide thin film |
| JPS5683050A (en) * | 1979-12-12 | 1981-07-07 | Toshiba Corp | Semiconductor device |
| JPS57151735U (en) * | 1981-02-10 | 1982-09-24 | ||
| JPS57132530U (en) * | 1981-02-10 | 1982-08-18 | ||
| BR8601387A (en) * | 1985-03-29 | 1986-12-02 | Raychem Ltd | DEVICE TO PROTECT AN ELECTRIC CIRCUIT, ELECTRIC CIRCUIT, ELECTRIC COMPONENT AND USE OF AN AMORPUS COMPOSITION |
| EP0242902A3 (en) * | 1986-03-26 | 1988-08-31 | Raychem Limited | Protection device |
| GB8621430D0 (en) * | 1986-09-05 | 1987-01-14 | Raychem Ltd | Overvoltage protection device |
| GB8623176D0 (en) * | 1986-09-26 | 1987-01-14 | Raychem Ltd | Circuit protection device |
| GB8623177D0 (en) * | 1986-09-26 | 1987-01-14 | Raychem Ltd | Circuit protection device |
| GB8623178D0 (en) * | 1986-09-26 | 1987-01-14 | Raychem Ltd | Circuit protection device |
| JP2790654B2 (en) * | 1989-04-28 | 1998-08-27 | ホーヤ株式会社 | Method for forming titanium dioxide film on plastic lens substrate |
| US5356485A (en) * | 1992-04-29 | 1994-10-18 | The United States Of America As Represented By The Secretary Of Commerce | Intermetallic thermocouples |
| GB2322707B (en) * | 1996-06-17 | 2000-07-12 | Mercury Diagnostics Inc | Electrochemical test device and related methods |
| US6001239A (en) | 1998-09-30 | 1999-12-14 | Mercury Diagnostics, Inc. | Membrane based electrochemical test device and related methods |
| GB2380475A (en) * | 2001-10-03 | 2003-04-09 | Qinetiq Ltd | Chalcogenide glass |
| GB0124308D0 (en) * | 2001-10-10 | 2001-11-28 | Unilever Plc | Detergent compositions |
| US6891749B2 (en) * | 2002-02-20 | 2005-05-10 | Micron Technology, Inc. | Resistance variable ‘on ’ memory |
| WO2007088626A1 (en) * | 2006-02-02 | 2007-08-09 | Renesas Technology Corp. | Semiconductor device |
| US7772120B2 (en) * | 2007-01-09 | 2010-08-10 | International Business Machines Corporation | Chemical vapor deposition method for the incorporation of nitrogen into materials including germanium and antimony |
| EP2068368B1 (en) * | 2007-12-06 | 2012-10-10 | Electronics and Telecommunications Research Institute | Method for manufacturing n-type and p-type chalcogenide thin film transistor |
| US8178906B2 (en) * | 2008-01-11 | 2012-05-15 | Electro Scientific Industries, Inc. | Laser chalcogenide phase change device |
| US7693388B1 (en) * | 2008-09-15 | 2010-04-06 | The United States Of America As Represented By The Secretary Of The Navy | Thermally stable IR transmitting chalcogenide glass |
| KR20140058208A (en) * | 2012-11-06 | 2014-05-14 | 삼성전자주식회사 | Image sensor |
| DE102014103560A1 (en) | 2013-03-15 | 2014-09-18 | Schott Corporation | Optical bonding through the use of low-softening optical glass for IR optical applications and formed products |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3343972A (en) * | 1964-03-02 | 1967-09-26 | Texas Instruments Inc | Ge-te-as glasses and method of preparation |
| US3360649A (en) * | 1965-04-22 | 1967-12-26 | Texas Instruments Inc | Ge-sb-se glass compositions |
| US3451794A (en) * | 1966-04-29 | 1969-06-24 | Texas Instruments Inc | Method for melt-casting infrared transmitting glasses |
| US3440068A (en) * | 1966-12-21 | 1969-04-22 | Texas Instruments Inc | Amorphous glass compositions |
| LU52765A1 (en) * | 1967-01-06 | 1968-08-06 | ||
| US3511993A (en) * | 1967-10-18 | 1970-05-12 | Texas Instruments Inc | Ge-se-te glass in an infrared detection system |
| US3820968A (en) * | 1970-04-15 | 1974-06-28 | Texas Instruments Inc | Making paths of devitrifiable chalcogenide glasses |
| US3771073A (en) * | 1970-07-13 | 1973-11-06 | Bell Telephone Labor Inc | Ultrasonic devices using germanium-containing chalogenide glasses |
| US3709813A (en) * | 1971-04-30 | 1973-01-09 | Texas Instruments Inc | Ion-selective electrochemical sensor |
-
1973
- 1973-07-02 US US05/375,794 patent/US3983076A/en not_active Expired - Lifetime
-
1974
- 1974-06-03 GB GB2449674A patent/GB1477670A/en not_active Expired
- 1974-06-04 CA CA201,660A patent/CA1031673A/en not_active Expired
- 1974-06-20 DE DE2429507A patent/DE2429507A1/en not_active Withdrawn
- 1974-06-24 IT IT24350/74A patent/IT1025022B/en active
- 1974-07-02 NL NL7408935A patent/NL7408935A/en not_active Application Discontinuation
- 1974-07-02 JP JP49075793A patent/JPS5039467A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB1477670A (en) | 1977-06-22 |
| US3983076A (en) | 1976-09-28 |
| NL7408935A (en) | 1975-01-06 |
| IT1025022B (en) | 1978-08-10 |
| JPS5039467A (en) | 1975-04-11 |
| DE2429507A1 (en) | 1975-01-23 |
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