CA1175143A - Integrated injection logic semiconductor memory device - Google Patents
Integrated injection logic semiconductor memory deviceInfo
- Publication number
- CA1175143A CA1175143A CA000365235A CA365235A CA1175143A CA 1175143 A CA1175143 A CA 1175143A CA 000365235 A CA000365235 A CA 000365235A CA 365235 A CA365235 A CA 365235A CA 1175143 A CA1175143 A CA 1175143A
- Authority
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- Canada
- Prior art keywords
- junction
- memory
- word lines
- discharging path
- set forth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
- H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
- H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
- H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
- H03K3/288—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
- G11C11/415—Address circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
- G11C11/416—Read-write [R-W] circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
Abstract
ABSTRACT OF THE DISCLOSURE A semiconductor memory circuit device is disclosed. The semiconductor memory circuit device is conventionally comprised of a plurality of memory-cell arrays. Each of the memory-cell arrays is conventionally provided with a plurality of IIL memory cells, a pair of positive word line and negative word line and further a plurality of bit lines. An the semiconductor memory circuit device at least one means for discharging electric charges is newly incorporated with each negative word line. Said means becomes active only when the corresponding memory-cell array changes from selection status to non-selection status.
Description
~ 1751~
INTEGRATED INJECTION LOGIC SEMICONDUCTOR MEMORY DEVICE
The present invention relates to a semiconductor memory circuit device comprised of a plurality of memory-cell arrays, each of which memory-cell array is formed by a plurality of integrated injection logics.
At present, the integrated injection logics, that is a so-called IILs (hereinafter referred to as IILs), are suitable elements for fabricating ~memory circuit device, because such IILs can be formed, as memory cells, with very high integration density. Such IIL memory cell has already been disclosed in, for example "Superintegrated memory shares functions on dif-fused islands", Electronics, February 14, 1972, Pages 83 through 85, which mentions the basic idea with respect to the IIL.
Thus, the IILs can contribute to realize a superintegrated memory circuit device. However, on the other hand, the IILs have a defect in that it is difficult to perform very high speed read and write operations in the IIL memory circuit de-vice due to the presence of a parasitic capacitor and a para-sitic resistor, both of which are formed in the bulk for fabri-cating the IIL memory cells.
Therefore, it is an object of the present invention to pro-vide a semiconductor memory circuit device, comprised of the IIL memory cells, which has a capability for performing very high speed read and write operations.
In accordance with one embodiment of the present inven-tion, there is provided a semiconductor memory device fabri--cated on a bulk semiconductor base having parasitic capaci-tance, comprising:
a plurality of memory-cell arrays, each of the memory cell arrays extending in a first direction and including a plurality of IIL (integrated injection logic) memory cells for storing data arranged in the first direction, the memory-cell -- 11751~
- la -arrays being arranged with a specified pitch in a second direc-tion perpendicular to the first direction;
word line pairs arranged in the first direction, each pair having first and second word lines,, and each word line having a selection and non-selection status and each of the second word lines comprising the bulk;
the memory-cell arrays respectively, operatively connected to a coresponding one of the pairs of word lines;
a plurality of pairs of bit lines extending in the second direction and operatively connectecl to each of the plurality of memory-cell arrays;
hold-current sources respectively, operatively connected to a corresponding one of the second word lines, for holding the data stored in the IIL memory cells;
at least one discharging path, operatively connected to each of the second word lines; and constant-current sources, operatively connected to the dis-charging path, for providing a discharging current, in accor-dance with the parasitic capacitance existing in the bul.~ and along the word lines, for the secoDd word lines changing from the selection status to the non-selection status, the parasitic capacitance being discharged through the constant-current source via the discharging path.
The present invention will be more apparent from the ensuing description with reference to the accompanying drawings wherein:
Fig. 1 illustrates an equivalent circuit diagram of a con-ventional IIL memory cell;
Fig. 2 is a cross sectional view of a semiconductor device for fabricating the IIL memory cell;
Fig. 3 is a plan view of the IIL memory cell MC shown as the equivalent circuit diagram in Fig. l;
Fig. 4 illustrates an equivalent circuit diagram of par-tial memory-cell clrrays and their peripheral members;
~ ~ ~5 1 ~ 3 Fig. 5 schematically illustrates an equivalent circuit diagram of the memory-cell array;
Fig. 6 depicts waveforms of voltage signals and current signals appearing in the circuit shown in Fig. 4;
Figs. 7A and 7B illustrate arrangements of discharging means DS of the present invention with respect to the con-ventional IIL memory cells MC;
Fig. 8 illustrates an equivalent circuit diagram of partial memory-cell arrays and their yeripheral m~mbers, in which discharging means according to the present invention, made of, for example dummy cells, are employed;
Fig. 9A illustrates an equivalent circuit diagram of the dummy cell DC which cooperates with a diode d acting as the junction member JC;
Fig. 9B is a cross sectional view of basic layout for constructing the circuit diagram shown in Fig. 9A;
Fig. 9C is a plan view of the actual layout for con-structing the circuit diagram shown in Fig. 9A;
Fig. 9D is an equivalent circuit diagram schematically illustrating the layout of the diodes d in the IIL memory circuit device;
Fig. lOA illustrates an equivalent circuit diagram of the dummy cell DC which cooperates with a resistor r acting as the junction member JC;
Fig. 1 OB is a cross sectional view of basic layout for constructing the circuit diagram shown in Fig. lOA;
Fig. lOC is a plan view of an actual layout for con-structing the circuit diagram shown in Fig. lOA;
Fig. lOD is an equivalent circuit diagram schematically illustrating the layout of the resistors r in the IIL memory circuit device;
Fig. llA illustrates an equivalent circuit diagram of the dummy cell DC which cooperates with a diode d and resis-tor r, connected in series, both acting as the junction 35 member JC;
Fig. 11B is a cross sectional view of the basic layout for construc~ing the circuit diagram shown in Fig. llA;
Fig. llC is a plan view of an actual layout for con-structinq the circuit diagram shown in Fig. llA;
Fig. llD is an equivalent circuit diagram schematically illustrating the layout of the pairs of series connected diodes d and resistors r;
Fig. 12 is an equivalent circuit diagram of the dummy cell DC which cooperates with a transistor Q7 acting as the junction member JC;
Fig. 13A is an equivalent circuit diagram of the dummy cell DC, the junction member JC, being comprised of the transistor Q7, and the hold-current source IH being com-prised of a transistor Q8;
Fig. 13s is a cross sectional view of a basic layout for constructing the circuit diagram shown in Fig. 13A, and;
Fig. 13C is a plan view of an actual layout for con-structing the circuit diagram shown in Fig. 13A.
In Fig. 1, which illustrates an equivalent circuit diagram of a conventional IIL memory cell, an II~ memory cell ~IC is comprised of six transistors Ql, Q2, Q3, Q4, Q5 and Q6. These transistors Ql through Q6 cooperate with a pair of a positive word line W+ and a negative word line W
and at the same time a pair of a "0" bit line B0 and a "1"
bit line Bl. The transistors Q3 and Q4 operate to store the logic of data. Either one of the transistors Q3 and Q4 holds the logic "1" and the other thereof holds the logic "0", alternately. The transistors Ql and Q2 act as load transitors with respect to the transistors Q3 and Q4, respectively. The transistors Q5 and Q6 function as buffer transistors for achieving read and write operations. That is, when a read operation is conducted and if, for example, the transistor Q3 is conductive and the transistor Q4 is non-conductive, the voltage level at the base of the tran~
sistor Q3 is detected on the bit line B0 via -the buffer transistor Q5, which voltage level is higher than that of the transistor Q4. The voltage level of the base of the transistor Q4 :is detected on t~e bi-t line Bl via the buffer transistor Q6.
~51d3 . 4 _ When a write operation is conducted and if, for e.~ample, the transistor Q4 is to be made conductive, a write current is absorbed Erom the transistor Q5 through the bit line BO. At this time, the base current to be supplied to the transistor Q3 is shunted to the base of the transistor Q5, and thus the transistor Q3 is made non-conductive and alternately the transistor Q4 is made conductive. These read and write operations are effective only when the IIL memory cell ~C is made to be in a selection status, when a typical word decoder (not shown) supplies positive voltage to the word line W+. Since the memory cell is formed as a static memory cell, containing a flip-flop therein, two word lines W+ and W are required.
The reason why the IIL memory cell is useful for fabricating a highly integrated memory circuit device, will be clarified with reference to Fig. 2. ~ig. 2 is a cross sectional view of a semiconductor device for fabricating the II~ memory cell. In Fig. 2, members which have the same reference symbols as those of Fig. 1, are identical to each ~0 other. A p-type region pl is an injector, connected to the word line W+. The injector pl acts as an emitter which is common to the emitter of each of the lateral pnp transistors Ql and Q2. The collectors of the transistors Ql and Q2 are represented by p-type regions p2 and p3, respectively. The 25 p-type regions p2 and p3 func~ion simultaneously as the bases of the transistors Q3 and Q4, respectively and as the bases of the transistors Q5 and Q6, respectively. The regions p2 and p3 contain therein n-type regions (n4/ n6) and (n3, n5), respectively. The regions n3 and n4 act as the collectors of the transistors Q3 and Q4, respectively.
The regions n5 and n6 act as the emitters of the transistors Q5 and Q6, respectively. The symbol n denotes a bulk, that is an epitaxial growth layer formed on a p-type substrate S. The layer n functions as a base which is common to the base of each of the transistors Ql and Q2 and simultaneously functions as an emitter which is common to the emitter of each of the transistors Q3 and Q4 and also as ~ 175 143 a collector which is common to the collector of each of the transistors Q5 and Q6. Further, i-t should be noted that the bulk n also functions as the word line W which is common to the word line of other IIL memory cells (not shown) arranged on the same memory-cell array. As will be understood from the above explanations with reference to Fig. 2, specified particular regions are commonly occupied by the transistors, and accordingly, the highly int:egrated memory circuit device can be obtained. Further, sinc:e the word line W is not ; 10 distributed on the surface of the semiconductor device, as happens in the typical static memory device, but is constructed by the bulk n itself, it is easy to obtain such a highly integrated memory circuit device.
A plan view of the IIL memory cell MC, shown as the equivalent circuit in Fig. 1, is illustrated in Fig. 3. In Fig. 3, the members which have the same reference symbols as those of Figs. 1 and 2, are functionally identical to each other. Generally, the IIL memory cells MC are arranged straight in a first direction along each memory-cell array 20 and at the same time the memory-cell arrays are arranged in a second direction being perpendicular to the first direction, and therefore, the n-type and p-type regions should be arranged with a certain layout, such as shown in this Fig. 3, which is suitable for arranging such memory-25 -cell arrays. Thus, it should be understood that the cross sectional view of the memory cell MC shown in Fig. 3 does not coincide with that of the memory cell MC shown in Fiq. 2, because Fig. 2 illustrates merely a basic arrange-ment of the n-type and p-type regionsO In Fig. 3, the word 30 line W+ extending in the first direction, the bit lines B0, Bl extending in the second direction, and various kinds of p-type and n-type regions have already been explained. The above mentioned word line W cannot be seen in this figure, because the line W is constructed by the bulk itself. The 35 reference symbols ISl and IS2, corresponding to regions indicated by hatching lines extending from top right to bottom left, represent isolation regions. The isolation ~1~51d~3 -egions ISl are introduced into the device, so as to prevent parasitic pnp transistors from forming between each adjacent memory cells i~C. These isolation regions ISl can be shallow isolation regions, which is also one of the factors for realizing a highly integrated rnemory circuit device. The isolation regions IS2 are introduced into the device, so as to electrically separate each adjacent memory-cell array from each other. These isolation regions IS2 should be deep isolation regions.
Fig. 4 illustrates an equivalent circuit diagram of partial memory-cell arrays and their peripheral members. In Fig. 4, the reference symbols ~CAA and MCAB represent memory-cell arrays of certain row (A) and another row (B), respectively. The memory-cell arrays MC~A and MCAB are, respectively provided with word lines ~WA+ , WA ~ and (WB+ , ~B ). A plurality of IIL memory cells MC are arranged, with certain pitch, along respective memory-cell arrays.
Although the memory cell MC (only one memory cell is illustrated) of array MCAA is illustrated specifically, but the memory cell ~only one memory cell is illustrated) of array MCAB is illustrated by merely a black box (MC)o The memory-cell arrays MCAA and MCAB are selectively activated (selection status) or not activated (non-selection status) by means of conventional word drivers WDA and ~B via corresponding word lines WA+ and WB+. The data to be read is transferred from a specified memory cell to a conventional sense amplifier SA via the bit lines B0 and Bl.
The reference symbol DoUt denotes a read data from the amplifier SA. The reference symbols BC0 and BCl represent conventional bit clampers which are employed so as to maintain the voltage level of the bit lines to be desired respective threshold voltage levels. The reference symbols IH denote conventional hold-current sources. Each of the hold-current source IH absorbs a constant hold current from corresponding word line (WA , WB ), which the constant hold current is very important to maintain the logic of data, stored in either the transistors Q3 or Q4, as it is until 1 1751d~3 the logic o~ data is rewritten.
As previously mentioned, the proposed IIL memory cell device has an advantage in that it can contribute to realize a superintegrated memory circuit device, wherein -the follow-ing fact is one of the factors which can realize the highlyintegration of memory cells. That is, the bulk itself functions as the word line W , simultaneously. However, on the other hand, the following clisadvantages are also produced. That is, firstly, the resistance value of the word line W is relatively higher than the conventional word line W , made of, for example aluminum, due to the presence of parasitic resistors located inside the bulk. Secondly, parasitic capacitors are formed inside the semiconductor device, between the bulk n and the substrate S (refer to Fig. 2). It should be recognized that the above mentioned parasitic resistors and capacitors make the speed for performing read and write operations considerably slow. The parasitic resistors and capacitors are schematically illustrated in Fig. 5 which is an equivalent circuit diagram of the memory-cell array ~CA. In Fig. 5, the parasitic resistors and the parasitic capacitors are represented by the reference symbols R and C, respectively. Other members W+ , W and MC have already been explained before.
Due to the presence of the parasitic resistors R and capacitors C (the capacitor C is also shown in Fig. 4), the response time of the word line W is relatively long. To be specific, it takes a relatively long time for the word line ~I to change from "H" (high) voltage level (selection status) of the word line W to "L" (low) voltage level -(non-selection status) thereof. At the same time, the bit current, flowing through one memory cell which is situated in a condition changing from the selection status to the non-selection status, is generated for a relatively long time. As a result, the following two problems occur~ The first problem is that the access time for achieving the read operation, is considerably long, which means that high speed read operation cannot be expected. This is because, since - 11751~3 the logic of one memory cell is maintained o~ one bit line for a relatively long time, the logic of the other memory which is going to be read from the sense amplifier, can not be detected guickly from the same bit line. The second 5 problem is that the write operation cannot be achieved with a high degree of accuracy when a hiqh speed write operation is conducted. In other words, a so-called write error, that is a "double write", is produced. This is because, since it takes a long time for the word line W to change from l'H"
10 voltage level to "L" voltage level, the bit current con-? tinues flowing through the memory cell which is situated in a condition changing from the selection status to the non-selection status for a long time. In this case, if the write current is supplied to the same bit line 1~ simultaneously in order to write the desired logic of data in another memory cell, both memory cells are left in the write condition, simultaneously, which means the occurrence of said "double write", and accordingly, the above mentioned write error takes place. It should be understood the above 20 mentioned two problems are derived from only one general fact in that the voltage level of the word line ~ changes from "H" to "L" too slowly. This general fact will also be clarified with reference to Fig. 6 and also Fig. 4. Fig. 6 depicts waveforms of the voltage signal or the current 25 signal appearing in the circuit shown in Fig. 4. In Fig. 6, row (a) depicts waveforms of the voltage signals appearing at the bases of the word drivers WDA and WDB (see Fig. 4).
Row (b) depicts waveforms of the voltage signals appearing on the word lines WA and WB of the memory-cell arrays MCAA
30 and MCAB (see Fig. 4), respectively. Row (c) depicts wave~
forms of voltage signals appearing on the bit lines B0 and Bl (see Fig. 4). First, taking as an example a case, as shown in row (a) of Fig. 6, where the voltage level, at the ba~e of the word driver WDA, is "H" and further any one of 35 the memory cells MC, contained in the memory-cell array MCAA, is in the selection status, that is the selected memory cell MC is now producing its logic of data, and next, at the time Tl , the voltage level, at the base of the word driver WDA, falls from the level "H" to the level "L" and at the same time, the voltage level, at the base of the word driver WDB, rises from the level "L" to the level "H", and lastly one of the memory cells MC, in the memory-cell array MCAB, is selected. In this case, the stored logic of the last selected memory cell, in the memory-cell array MCAA, is different from that of the newly selected memory cell, in the memory-cell array MCAB. Under the above mentioned conditions, the voltage level on the word line ~IA
falls from the level "H" to the level "L", because the memory-cell array MCAA changes from the selection status to the non-selection status. However, at this time, the change from the selection status to the non-selection status takes place very slowly. This is because, the voltage level on the word line WA falls very slowly from the level "H" to the level "L", due to the presence of the aforesaid para-sitic capacitors C and parasitic resistors R, which exist along the word line WA . The slow fall of the level on the
INTEGRATED INJECTION LOGIC SEMICONDUCTOR MEMORY DEVICE
The present invention relates to a semiconductor memory circuit device comprised of a plurality of memory-cell arrays, each of which memory-cell array is formed by a plurality of integrated injection logics.
At present, the integrated injection logics, that is a so-called IILs (hereinafter referred to as IILs), are suitable elements for fabricating ~memory circuit device, because such IILs can be formed, as memory cells, with very high integration density. Such IIL memory cell has already been disclosed in, for example "Superintegrated memory shares functions on dif-fused islands", Electronics, February 14, 1972, Pages 83 through 85, which mentions the basic idea with respect to the IIL.
Thus, the IILs can contribute to realize a superintegrated memory circuit device. However, on the other hand, the IILs have a defect in that it is difficult to perform very high speed read and write operations in the IIL memory circuit de-vice due to the presence of a parasitic capacitor and a para-sitic resistor, both of which are formed in the bulk for fabri-cating the IIL memory cells.
Therefore, it is an object of the present invention to pro-vide a semiconductor memory circuit device, comprised of the IIL memory cells, which has a capability for performing very high speed read and write operations.
In accordance with one embodiment of the present inven-tion, there is provided a semiconductor memory device fabri--cated on a bulk semiconductor base having parasitic capaci-tance, comprising:
a plurality of memory-cell arrays, each of the memory cell arrays extending in a first direction and including a plurality of IIL (integrated injection logic) memory cells for storing data arranged in the first direction, the memory-cell -- 11751~
- la -arrays being arranged with a specified pitch in a second direc-tion perpendicular to the first direction;
word line pairs arranged in the first direction, each pair having first and second word lines,, and each word line having a selection and non-selection status and each of the second word lines comprising the bulk;
the memory-cell arrays respectively, operatively connected to a coresponding one of the pairs of word lines;
a plurality of pairs of bit lines extending in the second direction and operatively connectecl to each of the plurality of memory-cell arrays;
hold-current sources respectively, operatively connected to a corresponding one of the second word lines, for holding the data stored in the IIL memory cells;
at least one discharging path, operatively connected to each of the second word lines; and constant-current sources, operatively connected to the dis-charging path, for providing a discharging current, in accor-dance with the parasitic capacitance existing in the bul.~ and along the word lines, for the secoDd word lines changing from the selection status to the non-selection status, the parasitic capacitance being discharged through the constant-current source via the discharging path.
The present invention will be more apparent from the ensuing description with reference to the accompanying drawings wherein:
Fig. 1 illustrates an equivalent circuit diagram of a con-ventional IIL memory cell;
Fig. 2 is a cross sectional view of a semiconductor device for fabricating the IIL memory cell;
Fig. 3 is a plan view of the IIL memory cell MC shown as the equivalent circuit diagram in Fig. l;
Fig. 4 illustrates an equivalent circuit diagram of par-tial memory-cell clrrays and their peripheral members;
~ ~ ~5 1 ~ 3 Fig. 5 schematically illustrates an equivalent circuit diagram of the memory-cell array;
Fig. 6 depicts waveforms of voltage signals and current signals appearing in the circuit shown in Fig. 4;
Figs. 7A and 7B illustrate arrangements of discharging means DS of the present invention with respect to the con-ventional IIL memory cells MC;
Fig. 8 illustrates an equivalent circuit diagram of partial memory-cell arrays and their yeripheral m~mbers, in which discharging means according to the present invention, made of, for example dummy cells, are employed;
Fig. 9A illustrates an equivalent circuit diagram of the dummy cell DC which cooperates with a diode d acting as the junction member JC;
Fig. 9B is a cross sectional view of basic layout for constructing the circuit diagram shown in Fig. 9A;
Fig. 9C is a plan view of the actual layout for con-structing the circuit diagram shown in Fig. 9A;
Fig. 9D is an equivalent circuit diagram schematically illustrating the layout of the diodes d in the IIL memory circuit device;
Fig. lOA illustrates an equivalent circuit diagram of the dummy cell DC which cooperates with a resistor r acting as the junction member JC;
Fig. 1 OB is a cross sectional view of basic layout for constructing the circuit diagram shown in Fig. lOA;
Fig. lOC is a plan view of an actual layout for con-structing the circuit diagram shown in Fig. lOA;
Fig. lOD is an equivalent circuit diagram schematically illustrating the layout of the resistors r in the IIL memory circuit device;
Fig. llA illustrates an equivalent circuit diagram of the dummy cell DC which cooperates with a diode d and resis-tor r, connected in series, both acting as the junction 35 member JC;
Fig. 11B is a cross sectional view of the basic layout for construc~ing the circuit diagram shown in Fig. llA;
Fig. llC is a plan view of an actual layout for con-structinq the circuit diagram shown in Fig. llA;
Fig. llD is an equivalent circuit diagram schematically illustrating the layout of the pairs of series connected diodes d and resistors r;
Fig. 12 is an equivalent circuit diagram of the dummy cell DC which cooperates with a transistor Q7 acting as the junction member JC;
Fig. 13A is an equivalent circuit diagram of the dummy cell DC, the junction member JC, being comprised of the transistor Q7, and the hold-current source IH being com-prised of a transistor Q8;
Fig. 13s is a cross sectional view of a basic layout for constructing the circuit diagram shown in Fig. 13A, and;
Fig. 13C is a plan view of an actual layout for con-structing the circuit diagram shown in Fig. 13A.
In Fig. 1, which illustrates an equivalent circuit diagram of a conventional IIL memory cell, an II~ memory cell ~IC is comprised of six transistors Ql, Q2, Q3, Q4, Q5 and Q6. These transistors Ql through Q6 cooperate with a pair of a positive word line W+ and a negative word line W
and at the same time a pair of a "0" bit line B0 and a "1"
bit line Bl. The transistors Q3 and Q4 operate to store the logic of data. Either one of the transistors Q3 and Q4 holds the logic "1" and the other thereof holds the logic "0", alternately. The transistors Ql and Q2 act as load transitors with respect to the transistors Q3 and Q4, respectively. The transistors Q5 and Q6 function as buffer transistors for achieving read and write operations. That is, when a read operation is conducted and if, for example, the transistor Q3 is conductive and the transistor Q4 is non-conductive, the voltage level at the base of the tran~
sistor Q3 is detected on the bit line B0 via -the buffer transistor Q5, which voltage level is higher than that of the transistor Q4. The voltage level of the base of the transistor Q4 :is detected on t~e bi-t line Bl via the buffer transistor Q6.
~51d3 . 4 _ When a write operation is conducted and if, for e.~ample, the transistor Q4 is to be made conductive, a write current is absorbed Erom the transistor Q5 through the bit line BO. At this time, the base current to be supplied to the transistor Q3 is shunted to the base of the transistor Q5, and thus the transistor Q3 is made non-conductive and alternately the transistor Q4 is made conductive. These read and write operations are effective only when the IIL memory cell ~C is made to be in a selection status, when a typical word decoder (not shown) supplies positive voltage to the word line W+. Since the memory cell is formed as a static memory cell, containing a flip-flop therein, two word lines W+ and W are required.
The reason why the IIL memory cell is useful for fabricating a highly integrated memory circuit device, will be clarified with reference to Fig. 2. ~ig. 2 is a cross sectional view of a semiconductor device for fabricating the II~ memory cell. In Fig. 2, members which have the same reference symbols as those of Fig. 1, are identical to each ~0 other. A p-type region pl is an injector, connected to the word line W+. The injector pl acts as an emitter which is common to the emitter of each of the lateral pnp transistors Ql and Q2. The collectors of the transistors Ql and Q2 are represented by p-type regions p2 and p3, respectively. The 25 p-type regions p2 and p3 func~ion simultaneously as the bases of the transistors Q3 and Q4, respectively and as the bases of the transistors Q5 and Q6, respectively. The regions p2 and p3 contain therein n-type regions (n4/ n6) and (n3, n5), respectively. The regions n3 and n4 act as the collectors of the transistors Q3 and Q4, respectively.
The regions n5 and n6 act as the emitters of the transistors Q5 and Q6, respectively. The symbol n denotes a bulk, that is an epitaxial growth layer formed on a p-type substrate S. The layer n functions as a base which is common to the base of each of the transistors Ql and Q2 and simultaneously functions as an emitter which is common to the emitter of each of the transistors Q3 and Q4 and also as ~ 175 143 a collector which is common to the collector of each of the transistors Q5 and Q6. Further, i-t should be noted that the bulk n also functions as the word line W which is common to the word line of other IIL memory cells (not shown) arranged on the same memory-cell array. As will be understood from the above explanations with reference to Fig. 2, specified particular regions are commonly occupied by the transistors, and accordingly, the highly int:egrated memory circuit device can be obtained. Further, sinc:e the word line W is not ; 10 distributed on the surface of the semiconductor device, as happens in the typical static memory device, but is constructed by the bulk n itself, it is easy to obtain such a highly integrated memory circuit device.
A plan view of the IIL memory cell MC, shown as the equivalent circuit in Fig. 1, is illustrated in Fig. 3. In Fig. 3, the members which have the same reference symbols as those of Figs. 1 and 2, are functionally identical to each other. Generally, the IIL memory cells MC are arranged straight in a first direction along each memory-cell array 20 and at the same time the memory-cell arrays are arranged in a second direction being perpendicular to the first direction, and therefore, the n-type and p-type regions should be arranged with a certain layout, such as shown in this Fig. 3, which is suitable for arranging such memory-25 -cell arrays. Thus, it should be understood that the cross sectional view of the memory cell MC shown in Fig. 3 does not coincide with that of the memory cell MC shown in Fiq. 2, because Fig. 2 illustrates merely a basic arrange-ment of the n-type and p-type regionsO In Fig. 3, the word 30 line W+ extending in the first direction, the bit lines B0, Bl extending in the second direction, and various kinds of p-type and n-type regions have already been explained. The above mentioned word line W cannot be seen in this figure, because the line W is constructed by the bulk itself. The 35 reference symbols ISl and IS2, corresponding to regions indicated by hatching lines extending from top right to bottom left, represent isolation regions. The isolation ~1~51d~3 -egions ISl are introduced into the device, so as to prevent parasitic pnp transistors from forming between each adjacent memory cells i~C. These isolation regions ISl can be shallow isolation regions, which is also one of the factors for realizing a highly integrated rnemory circuit device. The isolation regions IS2 are introduced into the device, so as to electrically separate each adjacent memory-cell array from each other. These isolation regions IS2 should be deep isolation regions.
Fig. 4 illustrates an equivalent circuit diagram of partial memory-cell arrays and their peripheral members. In Fig. 4, the reference symbols ~CAA and MCAB represent memory-cell arrays of certain row (A) and another row (B), respectively. The memory-cell arrays MC~A and MCAB are, respectively provided with word lines ~WA+ , WA ~ and (WB+ , ~B ). A plurality of IIL memory cells MC are arranged, with certain pitch, along respective memory-cell arrays.
Although the memory cell MC (only one memory cell is illustrated) of array MCAA is illustrated specifically, but the memory cell ~only one memory cell is illustrated) of array MCAB is illustrated by merely a black box (MC)o The memory-cell arrays MCAA and MCAB are selectively activated (selection status) or not activated (non-selection status) by means of conventional word drivers WDA and ~B via corresponding word lines WA+ and WB+. The data to be read is transferred from a specified memory cell to a conventional sense amplifier SA via the bit lines B0 and Bl.
The reference symbol DoUt denotes a read data from the amplifier SA. The reference symbols BC0 and BCl represent conventional bit clampers which are employed so as to maintain the voltage level of the bit lines to be desired respective threshold voltage levels. The reference symbols IH denote conventional hold-current sources. Each of the hold-current source IH absorbs a constant hold current from corresponding word line (WA , WB ), which the constant hold current is very important to maintain the logic of data, stored in either the transistors Q3 or Q4, as it is until 1 1751d~3 the logic o~ data is rewritten.
As previously mentioned, the proposed IIL memory cell device has an advantage in that it can contribute to realize a superintegrated memory circuit device, wherein -the follow-ing fact is one of the factors which can realize the highlyintegration of memory cells. That is, the bulk itself functions as the word line W , simultaneously. However, on the other hand, the following clisadvantages are also produced. That is, firstly, the resistance value of the word line W is relatively higher than the conventional word line W , made of, for example aluminum, due to the presence of parasitic resistors located inside the bulk. Secondly, parasitic capacitors are formed inside the semiconductor device, between the bulk n and the substrate S (refer to Fig. 2). It should be recognized that the above mentioned parasitic resistors and capacitors make the speed for performing read and write operations considerably slow. The parasitic resistors and capacitors are schematically illustrated in Fig. 5 which is an equivalent circuit diagram of the memory-cell array ~CA. In Fig. 5, the parasitic resistors and the parasitic capacitors are represented by the reference symbols R and C, respectively. Other members W+ , W and MC have already been explained before.
Due to the presence of the parasitic resistors R and capacitors C (the capacitor C is also shown in Fig. 4), the response time of the word line W is relatively long. To be specific, it takes a relatively long time for the word line ~I to change from "H" (high) voltage level (selection status) of the word line W to "L" (low) voltage level -(non-selection status) thereof. At the same time, the bit current, flowing through one memory cell which is situated in a condition changing from the selection status to the non-selection status, is generated for a relatively long time. As a result, the following two problems occur~ The first problem is that the access time for achieving the read operation, is considerably long, which means that high speed read operation cannot be expected. This is because, since - 11751~3 the logic of one memory cell is maintained o~ one bit line for a relatively long time, the logic of the other memory which is going to be read from the sense amplifier, can not be detected guickly from the same bit line. The second 5 problem is that the write operation cannot be achieved with a high degree of accuracy when a hiqh speed write operation is conducted. In other words, a so-called write error, that is a "double write", is produced. This is because, since it takes a long time for the word line W to change from l'H"
10 voltage level to "L" voltage level, the bit current con-? tinues flowing through the memory cell which is situated in a condition changing from the selection status to the non-selection status for a long time. In this case, if the write current is supplied to the same bit line 1~ simultaneously in order to write the desired logic of data in another memory cell, both memory cells are left in the write condition, simultaneously, which means the occurrence of said "double write", and accordingly, the above mentioned write error takes place. It should be understood the above 20 mentioned two problems are derived from only one general fact in that the voltage level of the word line ~ changes from "H" to "L" too slowly. This general fact will also be clarified with reference to Fig. 6 and also Fig. 4. Fig. 6 depicts waveforms of the voltage signal or the current 25 signal appearing in the circuit shown in Fig. 4. In Fig. 6, row (a) depicts waveforms of the voltage signals appearing at the bases of the word drivers WDA and WDB (see Fig. 4).
Row (b) depicts waveforms of the voltage signals appearing on the word lines WA and WB of the memory-cell arrays MCAA
30 and MCAB (see Fig. 4), respectively. Row (c) depicts wave~
forms of voltage signals appearing on the bit lines B0 and Bl (see Fig. 4). First, taking as an example a case, as shown in row (a) of Fig. 6, where the voltage level, at the ba~e of the word driver WDA, is "H" and further any one of 35 the memory cells MC, contained in the memory-cell array MCAA, is in the selection status, that is the selected memory cell MC is now producing its logic of data, and next, at the time Tl , the voltage level, at the base of the word driver WDA, falls from the level "H" to the level "L" and at the same time, the voltage level, at the base of the word driver WDB, rises from the level "L" to the level "H", and lastly one of the memory cells MC, in the memory-cell array MCAB, is selected. In this case, the stored logic of the last selected memory cell, in the memory-cell array MCAA, is different from that of the newly selected memory cell, in the memory-cell array MCAB. Under the above mentioned conditions, the voltage level on the word line ~IA
falls from the level "H" to the level "L", because the memory-cell array MCAA changes from the selection status to the non-selection status. However, at this time, the change from the selection status to the non-selection status takes place very slowly. This is because, the voltage level on the word line WA falls very slowly from the level "H" to the level "L", due to the presence of the aforesaid para-sitic capacitors C and parasitic resistors R, which exist along the word line WA . The slow fall of the level on the
2~ word line WA will be clarified with reference to row (b) of Fig. 6. Consequently, the voltage level on the bit line Bl also changes very slowly from the level "H" to the level "L", as shown in row (c) of Fig. 6. It should be noted that, referring to Fig. 4, the voltage level on the bit line Bl changes in proportion to the voltage level on the word line WA , through the transistors Q4 and ~6.
The read operation becomes effective when the voltage difference between the bit lines BO and Bl exceeds a pre~
determined reference voltage (refer to the voltage " VR" in row (c) of Fig. 6). Thus, the access time for reading data can be defined by the time tl (refer to the row (c))~ The identical read operation may also be achieved after the T2.
In order to achieve a high speed read operation, the access time tl should be shortened. In other words, the time, required for discharging the electric charges on the word line WA , should be shortened. Accordingly, referring to Fig. 4, a large hold current may be absorbed by the 1 ~ 75 1d~3 hold-current sources IH ~ so as to shorten said time tl which is required, as mentioned above, for discharging the electric charges on the word line WA . However, the best way to shorten the time tl is not by increasing the magnitude of the hold current, at least from an economical point of view. This is becausej, the non-selected memory--cell arrays waste too much hold current. The waste of the hold current will become very noticeable, if the semi-conductor me~ory device is fabricated as a large capacity RA~ (random access memory).
Since, as previously mentioned, the voltage level on the word line W changes from level "H" to level "L" very slowly, the aforesaid write error, that is the double write, is induced. Referring to Fig. 4, when the voltage levels, ~5 at the bases of the transistors Q3 and Q4 in the memory-cell array MCAA which change from the selection status to the non-selection status, changes slowly due to the slow change, from the level "H" to the level "L", of the voltage level on the word line WA . Therefore, if another write current is supplied to the bit line durinq the slow change of said voltage levels, at the bases of transistors Q3 and Q4, the write current is shunted to the transistors Q3 and Q4 again, although these transistors Q3 and Q4 should be left in the non-selection status. Thus, an undesired write error occurs. The waveforms shown in rows (d), ~e) and (f) of Fig. 6 will be explained hereinafter.
As explained above in detail, in the conventional IIL
memory circuit device, the first and second problems are induced therefrom, the first one thereof resides in the fact that a very high speed read operation cannot be expected and the second one thereof resides in the fact that the undesired write error or the double write occurs.
The IIL memory circuit device of the present invention introduces therein a discharging means for discharging the 35 electric charges stored in the parasitic capacitors C dis-tributed along the word lines ~ . Each of the word lines W
has at least one discharging means. The discharging means become operative only when the corresponding memory-cell array changes from the selection status to the non-selec-tion status. Further, the electric charges, stored in one memory-cell array which is being changed from the selection s~atus to the non-selection status, are absorbed via the discharging means with the aid of a constant-current source.
Returning to Fig. 6, the memory-cell array to be selected is switched at the time Tl from the array MCAA to the array ~CAB. At this time, the discharging currents IDA and IDB ~ flowing respectively through the arrays MCAA and MCAB, change, as shown in row (d). Further, the transition from IDA to IDB ( see row (d)~ takes place after the occurrence of the transition from WA to h~ (see row (b)). Therefore, the discharging current continues flowing even though the transition, from WA to WB has already been completed. As a result, the electric charges, stored in the parasitic capacitors C along the word line ~A , are still absorbed as the discharging current by the constant-current source via the discharging means, even though the selection of the memory-cell array, from the array MCAA to the MCAB, has-already been completed. Thus, the voltage level on the word line WA changes from the level 'IH'' to the level l'L" faster, as shown in row (e~, than that shown in row (b). At the same time, the voltage difference between the bit lines B0 and Bl exceeds the reference voltage ~VR after the elapse of the time t2 (see row (f)) which occurs faster than the time tl (see row (c)). That is, a short access time (t2) ~or reading data is ob-tained. On the other hand, the above mentioned write error, or the double write, can also be eliminated.
In each of the memory-cell arrays MCA, the discharging means should be located at a particular position or posi-tions. If one discharging means is employed in each memory-cell array MCA, the discharging means should be located at the center of the array MCA, as shown in Fig. 7A. ~hile, if a plurality of discharging means, for example three means, are employed ill each memory-cell array MCA, these - 11751~3 discharging means should be uniformly distributed along -the array MCA, as shown in Fig. 7B. In Figs. 7A and 7B, the members ~C are the memory cells, identical with those shown in Figs. l, 4 and 5. The members DS represent the discharging members according to the present invention. The discharging means DS cooperate with one or more constant-current sources, but these are not illustrated in these figures. The arrangement, illustrated in Fig. 7A, is suit-able for the construction of relatively small capacity RAM, while, the arrange~ent, illustrated in Fig. 7B, is suitable for the construction of relatively large capacity RAM~
The reason why the arrangement, illustrated in FigO 7A
or 7B, is suitable for the construction of the I~L memory circuit device, is as follows. The discharging currents are absorbed from the parasitic capacitors existing in the bulk, that is the word line ~ (see Fig. 5). At this time, the discharging currents flow through the parasitic resistors R
(see Fig. 5). Thus, the voltage drop is generated across each of the parasitic resistors Ro It is apparent that such voltage drops should be generated uniformly throughout the parasitic resistors R along each memory-cell array. If unbalance of voltage potential is induced in the bulk, it is difficult to obtain an uniform discharge of word lines W
it is difficult to always achieve high speed read and ; 25 correct write operations. It should be recognized that the arrangements, shown in Figs. 7A and 7B, are useful for suppressing the induction of said unbalance of the voltage potential in the bulk.
~owever, insertion of the discharging means DS into the IIL memory cells MC, induces an undesired problem. The problem is that the discharging means DS acts as an irrPgular portion with respect to the adjacent memory cells MC. In other words, a continuity, created along the successive memory cells, is broken by the irregular portion where the discharging means is located. If the continuity is broken by the irregular portion, it is a known fact that the threshold current for writing data, flowing through the ~ :~75 1~ 3 memory cell which is located adjacent to the irregular portion, abnormally increases. In order to overcome the above mentioned known fact, the applicant of the present invention has already proposed a means for smoothing the irregular portion, called dumm~r cell (DC) in the Japanese patent application No. 56007/7~, filed May ll, 1978. Since the dummy cell includes the injector (see region pl in Fig.
2) therein, as does the IIL memory cell, the threshold current, flowing through the adjacent memory cell, is lQ shunted by the injector. Consequently, the increase of the threshold current can be suppressed. In short, it is preferable for the dummy cell to be formed with a pattern identical to the pattern of the memory cell. The dis-charging means, comprised of the dummy cells (DC), are shown lS in Fig. 8. Each of the dummy cells DC is comprised of transistors which are identical to the transistors Ql, Q2 and Q3 for comprising each memory cell MC. The transitor Q3 may be substituted for a transitor which is identical to the transistor Q4 of the memory cell MC. Since the dummy cells DC (DCA, DCB and so on) do not conduct the read and write operation, it is not necessary to use two transistors, identical to the transistors ~3 and Q4 for storing data in the memory cell MC, simultaneously. Accordingly, either one of the transistors, identical to the transistors Q3 and Q4, can be employed, which transistor is always made conductive.
Transistors, identical to the transistors Q5 and Q6, are not required in the cell DC. The dummy cells DC (DCA, DCB and so on) are connected to the constant-current source IC via respective junction members JC (JCA, JCB and so on) and respective discharging paths DP (DPA, DPB and so on)O Each of the junction members JC is made active and supplies the discharging current therethrough back to the constant--current source IC ~ only when the corresponding memory-cell array is changed from the selection status to the non-selection status. In other words, the junction members JC discharge the electric charges selectively among one of the word lines W , which word line changes from the 51~
selection status to the non-selection status.
The junction member can be made of either a transistor, a diode, a resistor or a series connected diode and a resistor. Fig. 9A illustrates an equivalent circuit diagram of the dummy cell (DC) which coopera-tes with the diode d acting as the junction member (JC). The members, represented by the symbols Ql ~ Q2 ~ Q3 , DC, W~ , W , DP, have already been explained. The diode d is comprised of a transistor, where the collector and the base of the transistor are shorted so as to obtain a function of a diode. The anode of the diode is connected to the word line W and the cathode thereof is connected to the discharging path DP which leads to the constant-current source Ic. It should be understood that, as schematically shown in Fig. 9D identical diodes d of other memory~cell arrays (not shown in Fig. 9A) are also connected, at their anodes, to respective word lines (W ), while, the cathodes of diodes are commonly connected to the single discharging path DP. Accordingly, one of the diodes dl which the 20 diode d is connected to the word line W changing from the selection status ~"H" level) to the non-selection status, can be conductive. At this time, the remaining diodes, the anodes thereof receive the voltage level "L", are still non-conductive. Therefore, the discharging current ID can 25 be absorbed only from the parasitic capacitors existing along the selected word line W . Fig. 9B is a cross sectional view of basic layout for constructing the circuit diagram shown in Fig. 9A. Nembers, represented by the symbols pl through p4, are p-type regions, and members, 30 represented by the symbols nl through n5, are n-type regions. The hatching regions represent isolation regions.
FigO 9C is a plan view of actual layout for constructing the circuit diagram shown in Fig. 9A.
FigO 10A illustrates an equivalent circuit diagram of 35 the dummy cell (DC) which cooperates with the resistor r acting as the junction member (JC). One end of the resistor r is connected to the word line W and the other 11~51~3 end thereof is connected to the discharging path DP. It should be understood that, as schematically shown in Fig. lOD, identical resistors r of other memory-cell arrays (not shown in Fig. lOA) are also connected, at each one end thereof, to respective word lines (W ), while, each other end thereof, is connected to the discharging path DP. The resistance value of each resistor r should be determined in such a manner that the discharging current ID does not reversely flow toward the non-selected word lines W .
! lo Fig. lOB is a cross sectional view of basic layout for constructing the circuit diagram shown in Fig. lOA
Fig. lOC is a plan view of actual layout for constructing the circuit diagram shown in Fig. lOA.
The junction member, comprised of the resistor r (Fig. lOA) has an advantage, when compared to the junction member which is comprised of the diode d (Fig. 9A), in that the discharging current ID ~ flowing through the resistor r, can continue flowing for a longer time than the time during which the discharging current ID flows through the diode d.
Thus, the electric charges, stored in the parasitic capa-citors C, can fully be absorbed through the resistor r.
This is because, the diode d can no longer be conductive and cuts off the discharging current ID ~ soon after when the diode d is reversely biased. However, the junction member, comprised of the diode d ~Fig. 9A) has an advantage, when compared to the junction member which is comprised of the r (Fig. 10A), in that the diode d can shut off, without fail, the discharging current ID which reversely flows toward the non-selected word line W .
The read operation becomes effective when the voltage difference between the bit lines BO and Bl exceeds a pre~
determined reference voltage (refer to the voltage " VR" in row (c) of Fig. 6). Thus, the access time for reading data can be defined by the time tl (refer to the row (c))~ The identical read operation may also be achieved after the T2.
In order to achieve a high speed read operation, the access time tl should be shortened. In other words, the time, required for discharging the electric charges on the word line WA , should be shortened. Accordingly, referring to Fig. 4, a large hold current may be absorbed by the 1 ~ 75 1d~3 hold-current sources IH ~ so as to shorten said time tl which is required, as mentioned above, for discharging the electric charges on the word line WA . However, the best way to shorten the time tl is not by increasing the magnitude of the hold current, at least from an economical point of view. This is becausej, the non-selected memory--cell arrays waste too much hold current. The waste of the hold current will become very noticeable, if the semi-conductor me~ory device is fabricated as a large capacity RA~ (random access memory).
Since, as previously mentioned, the voltage level on the word line W changes from level "H" to level "L" very slowly, the aforesaid write error, that is the double write, is induced. Referring to Fig. 4, when the voltage levels, ~5 at the bases of the transistors Q3 and Q4 in the memory-cell array MCAA which change from the selection status to the non-selection status, changes slowly due to the slow change, from the level "H" to the level "L", of the voltage level on the word line WA . Therefore, if another write current is supplied to the bit line durinq the slow change of said voltage levels, at the bases of transistors Q3 and Q4, the write current is shunted to the transistors Q3 and Q4 again, although these transistors Q3 and Q4 should be left in the non-selection status. Thus, an undesired write error occurs. The waveforms shown in rows (d), ~e) and (f) of Fig. 6 will be explained hereinafter.
As explained above in detail, in the conventional IIL
memory circuit device, the first and second problems are induced therefrom, the first one thereof resides in the fact that a very high speed read operation cannot be expected and the second one thereof resides in the fact that the undesired write error or the double write occurs.
The IIL memory circuit device of the present invention introduces therein a discharging means for discharging the 35 electric charges stored in the parasitic capacitors C dis-tributed along the word lines ~ . Each of the word lines W
has at least one discharging means. The discharging means become operative only when the corresponding memory-cell array changes from the selection status to the non-selec-tion status. Further, the electric charges, stored in one memory-cell array which is being changed from the selection s~atus to the non-selection status, are absorbed via the discharging means with the aid of a constant-current source.
Returning to Fig. 6, the memory-cell array to be selected is switched at the time Tl from the array MCAA to the array ~CAB. At this time, the discharging currents IDA and IDB ~ flowing respectively through the arrays MCAA and MCAB, change, as shown in row (d). Further, the transition from IDA to IDB ( see row (d)~ takes place after the occurrence of the transition from WA to h~ (see row (b)). Therefore, the discharging current continues flowing even though the transition, from WA to WB has already been completed. As a result, the electric charges, stored in the parasitic capacitors C along the word line ~A , are still absorbed as the discharging current by the constant-current source via the discharging means, even though the selection of the memory-cell array, from the array MCAA to the MCAB, has-already been completed. Thus, the voltage level on the word line WA changes from the level 'IH'' to the level l'L" faster, as shown in row (e~, than that shown in row (b). At the same time, the voltage difference between the bit lines B0 and Bl exceeds the reference voltage ~VR after the elapse of the time t2 (see row (f)) which occurs faster than the time tl (see row (c)). That is, a short access time (t2) ~or reading data is ob-tained. On the other hand, the above mentioned write error, or the double write, can also be eliminated.
In each of the memory-cell arrays MCA, the discharging means should be located at a particular position or posi-tions. If one discharging means is employed in each memory-cell array MCA, the discharging means should be located at the center of the array MCA, as shown in Fig. 7A. ~hile, if a plurality of discharging means, for example three means, are employed ill each memory-cell array MCA, these - 11751~3 discharging means should be uniformly distributed along -the array MCA, as shown in Fig. 7B. In Figs. 7A and 7B, the members ~C are the memory cells, identical with those shown in Figs. l, 4 and 5. The members DS represent the discharging members according to the present invention. The discharging means DS cooperate with one or more constant-current sources, but these are not illustrated in these figures. The arrangement, illustrated in Fig. 7A, is suit-able for the construction of relatively small capacity RAM, while, the arrange~ent, illustrated in Fig. 7B, is suitable for the construction of relatively large capacity RAM~
The reason why the arrangement, illustrated in FigO 7A
or 7B, is suitable for the construction of the I~L memory circuit device, is as follows. The discharging currents are absorbed from the parasitic capacitors existing in the bulk, that is the word line ~ (see Fig. 5). At this time, the discharging currents flow through the parasitic resistors R
(see Fig. 5). Thus, the voltage drop is generated across each of the parasitic resistors Ro It is apparent that such voltage drops should be generated uniformly throughout the parasitic resistors R along each memory-cell array. If unbalance of voltage potential is induced in the bulk, it is difficult to obtain an uniform discharge of word lines W
it is difficult to always achieve high speed read and ; 25 correct write operations. It should be recognized that the arrangements, shown in Figs. 7A and 7B, are useful for suppressing the induction of said unbalance of the voltage potential in the bulk.
~owever, insertion of the discharging means DS into the IIL memory cells MC, induces an undesired problem. The problem is that the discharging means DS acts as an irrPgular portion with respect to the adjacent memory cells MC. In other words, a continuity, created along the successive memory cells, is broken by the irregular portion where the discharging means is located. If the continuity is broken by the irregular portion, it is a known fact that the threshold current for writing data, flowing through the ~ :~75 1~ 3 memory cell which is located adjacent to the irregular portion, abnormally increases. In order to overcome the above mentioned known fact, the applicant of the present invention has already proposed a means for smoothing the irregular portion, called dumm~r cell (DC) in the Japanese patent application No. 56007/7~, filed May ll, 1978. Since the dummy cell includes the injector (see region pl in Fig.
2) therein, as does the IIL memory cell, the threshold current, flowing through the adjacent memory cell, is lQ shunted by the injector. Consequently, the increase of the threshold current can be suppressed. In short, it is preferable for the dummy cell to be formed with a pattern identical to the pattern of the memory cell. The dis-charging means, comprised of the dummy cells (DC), are shown lS in Fig. 8. Each of the dummy cells DC is comprised of transistors which are identical to the transistors Ql, Q2 and Q3 for comprising each memory cell MC. The transitor Q3 may be substituted for a transitor which is identical to the transistor Q4 of the memory cell MC. Since the dummy cells DC (DCA, DCB and so on) do not conduct the read and write operation, it is not necessary to use two transistors, identical to the transistors ~3 and Q4 for storing data in the memory cell MC, simultaneously. Accordingly, either one of the transistors, identical to the transistors Q3 and Q4, can be employed, which transistor is always made conductive.
Transistors, identical to the transistors Q5 and Q6, are not required in the cell DC. The dummy cells DC (DCA, DCB and so on) are connected to the constant-current source IC via respective junction members JC (JCA, JCB and so on) and respective discharging paths DP (DPA, DPB and so on)O Each of the junction members JC is made active and supplies the discharging current therethrough back to the constant--current source IC ~ only when the corresponding memory-cell array is changed from the selection status to the non-selection status. In other words, the junction members JC discharge the electric charges selectively among one of the word lines W , which word line changes from the 51~
selection status to the non-selection status.
The junction member can be made of either a transistor, a diode, a resistor or a series connected diode and a resistor. Fig. 9A illustrates an equivalent circuit diagram of the dummy cell (DC) which coopera-tes with the diode d acting as the junction member (JC). The members, represented by the symbols Ql ~ Q2 ~ Q3 , DC, W~ , W , DP, have already been explained. The diode d is comprised of a transistor, where the collector and the base of the transistor are shorted so as to obtain a function of a diode. The anode of the diode is connected to the word line W and the cathode thereof is connected to the discharging path DP which leads to the constant-current source Ic. It should be understood that, as schematically shown in Fig. 9D identical diodes d of other memory~cell arrays (not shown in Fig. 9A) are also connected, at their anodes, to respective word lines (W ), while, the cathodes of diodes are commonly connected to the single discharging path DP. Accordingly, one of the diodes dl which the 20 diode d is connected to the word line W changing from the selection status ~"H" level) to the non-selection status, can be conductive. At this time, the remaining diodes, the anodes thereof receive the voltage level "L", are still non-conductive. Therefore, the discharging current ID can 25 be absorbed only from the parasitic capacitors existing along the selected word line W . Fig. 9B is a cross sectional view of basic layout for constructing the circuit diagram shown in Fig. 9A. Nembers, represented by the symbols pl through p4, are p-type regions, and members, 30 represented by the symbols nl through n5, are n-type regions. The hatching regions represent isolation regions.
FigO 9C is a plan view of actual layout for constructing the circuit diagram shown in Fig. 9A.
FigO 10A illustrates an equivalent circuit diagram of 35 the dummy cell (DC) which cooperates with the resistor r acting as the junction member (JC). One end of the resistor r is connected to the word line W and the other 11~51~3 end thereof is connected to the discharging path DP. It should be understood that, as schematically shown in Fig. lOD, identical resistors r of other memory-cell arrays (not shown in Fig. lOA) are also connected, at each one end thereof, to respective word lines (W ), while, each other end thereof, is connected to the discharging path DP. The resistance value of each resistor r should be determined in such a manner that the discharging current ID does not reversely flow toward the non-selected word lines W .
! lo Fig. lOB is a cross sectional view of basic layout for constructing the circuit diagram shown in Fig. lOA
Fig. lOC is a plan view of actual layout for constructing the circuit diagram shown in Fig. lOA.
The junction member, comprised of the resistor r (Fig. lOA) has an advantage, when compared to the junction member which is comprised of the diode d (Fig. 9A), in that the discharging current ID ~ flowing through the resistor r, can continue flowing for a longer time than the time during which the discharging current ID flows through the diode d.
Thus, the electric charges, stored in the parasitic capa-citors C, can fully be absorbed through the resistor r.
This is because, the diode d can no longer be conductive and cuts off the discharging current ID ~ soon after when the diode d is reversely biased. However, the junction member, comprised of the diode d ~Fig. 9A) has an advantage, when compared to the junction member which is comprised of the r (Fig. 10A), in that the diode d can shut off, without fail, the discharging current ID which reversely flows toward the non-selected word line W .
3~ Therefore, it is preferable to make the junction member JC by using the series connected diode d and resistor r. Fig. 11A illustrates an equivalent circuit diagram of the dummy cell (DC) which cooperates with the series connec-ted diode d and resistor r, both acting as the junction member JC. The anode of the diode d is connected to the word line ~l , the cathode thereof is connected to one end of the resistor r, the other end thereof is ~ 17~ ~3 connected to the discharging path DP. It should be understood that, as schematically shown in Fig. 11D, identical pairs of series connected diodes d and resistors r of other memory-cell arrays (not shown in Fig. llA) are also connected between respective word lines (h~ ) and the common discharging path DP. Fig. llB is a cross sectional view of basic layout for constructing the circuit diagram shown in Fig. llA. Fig. llC is a plan view of actual layout for constructing the circuit diagram shown in Fig. llA.
The junction member JC can also be fabricated by a transistor. Fig. 12 illustrates an equivalent circuit diagram of the dummy cell (DC) which cooperates ~ith the transistor acting as the junction member (JC). It should be understood that, as illustrated by the members JCA, JCB in Fig. 8, identical transistors Q7 of other memory-cell arrays (not shown in Fig. 12) are also connected, at their collec~
tors, to respective word lines W and also connected, at their emitters, to the common discharging path DP. The voltage level, at the base of the transistor Q7, sho~lld be 20 proportional to the voltage level developed at a suitable position in the dummy cell DC, so far as the voltage level varies in accordance with the variation of the voltage level on the word line W . Therefore, in the example illustrated in Fig. 12, the base of the transistor Q7 is connected to the collector of the aforesaid transistor Q3. The function of the transistor Q7 is substantially the same as that of the diode d shown in Fig. 9A. The location of the tran-sistor Q7 may be the same as that of the transistor Q5 to be positioned in the IIL memory cell MC (see Fig. 1).
Similarly, the location of each of the aforesaid diodes d, resistors r and pairs of series connected diodes d and resistors r, may be the same as that of the transistor Q5 positioned in the IIL memory cell MC (see Fig. 1).
Further, it is also preferable to locate a transistor, for comprising the aforementioned hold-current source IH ' at the position where the transistor Q6 is positioned in the IIL memory cell MC.
~75t~3 Thus, if the transistors Q5 and Q6 of the IIL memory cell MC shown in Fig. 1, are respectively substituted for the junction member JC and the hold-current source IH ~ the dummy cell DC, the junction member JC and the hold-current source IH may be fabricated with a layout which is almost identical to the layout of the IIL memory cell MC, which fact can contribute -to realize the very high integration of the memory circuit device. One example of the above men-tioned layout is illustrated in Fig. 13A. Fig. 13A is an j 10 equivalent circuit diagra~ of the dummy cell DC, the junc-tion member JC which is comprised of the transistor Q7 (see Fig. 12) and the hold-current sourse IH which is comprised of a transistor Q8. It should be recogni~ed that the junction member JC is not limited to the transistor Q7, but is also applicable with respect to the diode d (see Fig. 9A), the resistor r (see Fig. lOA) or the series connected diode d and resistor r (see Fig. llA).
Fig. 13B is a cross sectional view of a basic layout for constructing the circuit diagram shown in Fig. 13A~
20 Fig. 13C is a plan view of an actual layout for constructing the circuit diagram shown in Fig. 13A.
As mentioned above, the IIL memory circuit device according to the present invention, has a capability for achieving high speed read and write operations and also 25 produces no write error, that is the "double write".
The junction member JC can also be fabricated by a transistor. Fig. 12 illustrates an equivalent circuit diagram of the dummy cell (DC) which cooperates ~ith the transistor acting as the junction member (JC). It should be understood that, as illustrated by the members JCA, JCB in Fig. 8, identical transistors Q7 of other memory-cell arrays (not shown in Fig. 12) are also connected, at their collec~
tors, to respective word lines W and also connected, at their emitters, to the common discharging path DP. The voltage level, at the base of the transistor Q7, sho~lld be 20 proportional to the voltage level developed at a suitable position in the dummy cell DC, so far as the voltage level varies in accordance with the variation of the voltage level on the word line W . Therefore, in the example illustrated in Fig. 12, the base of the transistor Q7 is connected to the collector of the aforesaid transistor Q3. The function of the transistor Q7 is substantially the same as that of the diode d shown in Fig. 9A. The location of the tran-sistor Q7 may be the same as that of the transistor Q5 to be positioned in the IIL memory cell MC (see Fig. 1).
Similarly, the location of each of the aforesaid diodes d, resistors r and pairs of series connected diodes d and resistors r, may be the same as that of the transistor Q5 positioned in the IIL memory cell MC (see Fig. 1).
Further, it is also preferable to locate a transistor, for comprising the aforementioned hold-current source IH ' at the position where the transistor Q6 is positioned in the IIL memory cell MC.
~75t~3 Thus, if the transistors Q5 and Q6 of the IIL memory cell MC shown in Fig. 1, are respectively substituted for the junction member JC and the hold-current source IH ~ the dummy cell DC, the junction member JC and the hold-current source IH may be fabricated with a layout which is almost identical to the layout of the IIL memory cell MC, which fact can contribute -to realize the very high integration of the memory circuit device. One example of the above men-tioned layout is illustrated in Fig. 13A. Fig. 13A is an j 10 equivalent circuit diagra~ of the dummy cell DC, the junc-tion member JC which is comprised of the transistor Q7 (see Fig. 12) and the hold-current sourse IH which is comprised of a transistor Q8. It should be recogni~ed that the junction member JC is not limited to the transistor Q7, but is also applicable with respect to the diode d (see Fig. 9A), the resistor r (see Fig. lOA) or the series connected diode d and resistor r (see Fig. llA).
Fig. 13B is a cross sectional view of a basic layout for constructing the circuit diagram shown in Fig. 13A~
20 Fig. 13C is a plan view of an actual layout for constructing the circuit diagram shown in Fig. 13A.
As mentioned above, the IIL memory circuit device according to the present invention, has a capability for achieving high speed read and write operations and also 25 produces no write error, that is the "double write".
Claims (25)
1. A semiconductor memory device fabricated on a bulk semiconductor base having parasitic capacitance, comprising:
a plurality of memory-cell arrays, each of the memory-cell arrays extending in a first direction and including a plurality of IIL (integrated injection logic) memory cells for storing data arranged in the first direction, the memory-cell arrays being arranged with a specified pitch in a second direc-tion perpendicular to the first direction;
word line pairs arranged in the first direction, each pair having first and second word lines, and each word line having a selection and non-selection status and each of the second word lines comprising said bulk;
the memory-cell arrays respectively, operatively con-nected to a coresponding one of said pairs of word lines;
a plurality of pairs of bit lines extending in the second direction and operatively connected to each of said plurality of memory-cell arrays;
hold-current sources respectively, operatively con-nected to a corresponding one of said second word lines, for holding the data stored in the IIL memory cells;
at least one discharging path, operatively connected to each of the second word lines; and constant-current sources, operatively connected to said discharging path, for providing a discharging current, in accordance with said parasitic capacitance existing in the bulk and along the word lines, for the second word lines changing from said selection status to said non-selection status, said parasitic capacitance being discharged through the constant-current source via the discharging path.
a plurality of memory-cell arrays, each of the memory-cell arrays extending in a first direction and including a plurality of IIL (integrated injection logic) memory cells for storing data arranged in the first direction, the memory-cell arrays being arranged with a specified pitch in a second direc-tion perpendicular to the first direction;
word line pairs arranged in the first direction, each pair having first and second word lines, and each word line having a selection and non-selection status and each of the second word lines comprising said bulk;
the memory-cell arrays respectively, operatively con-nected to a coresponding one of said pairs of word lines;
a plurality of pairs of bit lines extending in the second direction and operatively connected to each of said plurality of memory-cell arrays;
hold-current sources respectively, operatively con-nected to a corresponding one of said second word lines, for holding the data stored in the IIL memory cells;
at least one discharging path, operatively connected to each of the second word lines; and constant-current sources, operatively connected to said discharging path, for providing a discharging current, in accordance with said parasitic capacitance existing in the bulk and along the word lines, for the second word lines changing from said selection status to said non-selection status, said parasitic capacitance being discharged through the constant-current source via the discharging path.
2. A device as set forth in claim 1, wherein said dis-charging path is located in the center of each of the memory-cell arrays.
3. A device as set forth in claim 1, further comprising a plurality of the discharging paths uniformly distributed on each of the memory-cell arrays.
4. A device as set forth in claim 2, further comprising means for smoothing an irregular portion created where the dis-charging path is operatively connected to each of the second word lines.
5. A device as set forth in claim 3, further comprising means for smoothing an irregular portion created where the dis-charging path is operatively connected to each of the second word lines.
6. A device as set forth in claim 4, having a read and a write operation, wherein each of the IIL memory cells comprises:
first and second transistors, interconnected with each other and connected to the corresponding one of said second word lines, for storing data;
third and fourth transistors, connected to the corresponding one of said first word lines, acting as load transistors for the first and second transistors, respectively;
and fifth and sixth transistors, each having a specified position on said bulk and connected to the corresponding one of said second word lines, to a corresponding one of the bit line pairs, and further acting as buffer transistors for achieving read and write operations, and wherein the means for smoothing the irregular portion comprises dummy cells, each including transistors corresponding to the third and fourth transistors and one of the first and second transistors, wherein said device further comprises a junction circuit having two terminals and operatively connected between the constant-current source and the dummy cell, wherein the junction circuit conducts current from a corresponding one of the second word lines which changes from the selection status to the non-selection status.
first and second transistors, interconnected with each other and connected to the corresponding one of said second word lines, for storing data;
third and fourth transistors, connected to the corresponding one of said first word lines, acting as load transistors for the first and second transistors, respectively;
and fifth and sixth transistors, each having a specified position on said bulk and connected to the corresponding one of said second word lines, to a corresponding one of the bit line pairs, and further acting as buffer transistors for achieving read and write operations, and wherein the means for smoothing the irregular portion comprises dummy cells, each including transistors corresponding to the third and fourth transistors and one of the first and second transistors, wherein said device further comprises a junction circuit having two terminals and operatively connected between the constant-current source and the dummy cell, wherein the junction circuit conducts current from a corresponding one of the second word lines which changes from the selection status to the non-selection status.
7. A device as set forth in claim 6, further comprising a plurality of the discharging paths uniformly distributed on each of the memory-cell arrays.
8. A device as set forth in claim 6 or 7, wherein the junction circuit comprises a transistor having a collector oper-atively connected to a corresponding one of the second word lines and an emitter operatively connected to the discharging path.
9. A device as set forth in claim 6 or 7, wherein the junction circuit comprises a diode having an anode connected to a corresponding one of the second word lines and a cathode con-nected to the discharging path.
10. A device as set forth in claim 6 or 7, wherein the junction circuit comprises a resistor connected between a cor-responding one of the second word lines and the discharging path.
11. A device as set forth in claim 6 or 7, wherein the junction circuit comprises a series connected diode and resis-tor, connected between a corresponding one of the second word lines and the discharging path.
12. A device as set forth in claim 6 or 7, wherein the junction circuit is located at a position corresponding to the position of the fifth transistor in each of the IIL memory cells.
13. A device as set forth in claim 6 or 7, wherein the hold-current source is located at a position corresponding to the position of the sixth transistor in each of the IIL memory cells.
14. A device as set forth in claim 6 or 7, wherein the junction circuit comprises a transistor having a collector operatively connected to a corresponding one of the second word lines and an emitter operatively connected to the discharging path and wherein one terminal of each of the junction members is connected to the corresponding second word line and the other terminal of each of the junction members is connected to the discharging path.
15. A device as set forth in claim 6 or 7, wherein the junction circuit comprises a transistor having a collector operatively connected to a corresponding one of the second word lines and an emitter operatively connected to the discharging path and wherein one terminal of each of the junction members is connected to the corresponding second word line and the other terminal of each of the junction members is connected to the discharging path and wherein the dummy cells and junction members are located on respective memory-cell arrays such that the dummy cells and the junction circuits are arranged along straight lines in said second direction.
16. A device as set forth in claim 6 or 7, wherein the junction circuit comprises a transistor having a collector operatively connected to a corresponding one of the second word lines and an emitter operatively connected to the discharging path and wherein one terminal of each of the junction members is connected to the corresponding second word line and the other terminal of each of the junction members is connected to the discharging path and wherein the dummy cells and junction members are located on respective memory-cell arrays such that the dummy cells and the junction circuits are arranged along straight lines in said second direction and wherein each of the discharging paths is distributed along a respective straight line in a direction being parallel to the direction in which the bit lines are distributed.
17. A device as set forth in claim 6 or 7, wherein the junction circuit comprises a diode having an anode connected to a corresponding one of the second word lines and a cathode con-nected to the discharging path and wherein one terminal of each of the junction members is connected to the corresponding second word line and the other terminal of each of the junction members is connected to the discharging path.
18. A device as set forth in claim 6 or 7, wherein the junction circuit comprises a resistor connected between a corresponding one of the second word lines and the discharging path and wherein one terminal of each of the junction members is connected to the corresponding second word line and the other terminal of each of the junction members is connected to the discharging path.
19. A device as set forth in claim 6 or 7, wherein the junction circuit comprises a series connected diode and resistor, connected between a corresponding one of the second word lines and the discharging path and wherein one terminal of each of the junction members is connected to the corresponding second word line and the other terminal of each of the junction members is connected to the discharging path.
20. A device as set forth in claim 6 or 7, wherein the junction circuit comprises a diode having an anode connected to a corresponding one of the second word lines and a cathode connected to the discharging path and wherein one terminal of each of the junction members is connected to the corresponding second word line and the other terminal of each of the junction members is connected to the discharging path and wherein the dummy cells and junction members are located on respective memory-cell arrays such that the dummy cells and the junction circuits are arranged along straight lines in said second direction.
21. A device as set forth in claim 6 or 7, wherein the junction circuit comprises a resistor connected between a corresponding one of the second word lines and the discharging path and wherein one terminal of each of the junction members is connected to the corresponding second word line and the other terminal of each of the junction members is connected to the discharging path and wherein the dummy cells and junction members are located on respective memory-cell arrays such that the dummy cells and the junction circuits are arranged along straight lines in said second direction.
22. A device as set forth in claim 6 or 7, wherein the junction circuit comprises a series connected diode and resistor, connected between a corresponding one of the second word lines and the discharging path and wherein one terminal of each of the junction members is connected to the corresponding second word line and the other terminal of each of the junction members is connected to the discharging path and wherein the dummy cells and junction members are located on respective memory-cell arrays such that the dummy cells and the junction circuits are arranged along straight lines in said second direction.
23. A device as set forth in claim 6 or 7, wherein the junction circuit comprises a diode having an anode connected to a corresponding one of the second word lines and a cathode connected to the discharging path and wherein one terminal of each of the junction members is connected to the corresponding second word line and the other terminal of each of the junction members is connected to the discharging path and wherein the dummy cells and junction members are located on respective memory-cell arrays such that the dummy cells and the junction circuits are arranged along straight lines in said second direction and wherein each of the discharging paths is distributed along a respective straight line in a direction being parallel to the direction in which the bit lines are distributed.
24. A device as set forth in claim 6 or 7, wherein the junction circuit comprises a resistor connected between a corresponding one of the second word lines and the discharging path and wherein one terminal of each of the junction members is connected to the corresponding second word line and the other terminal of each of the junction members is connected to the discharging path and wherein the dummy cells and junction members are located on respective memory-cell arrays such that the dummy cells and the junction circuits are arranged along straight lines in said second direction and wherein each of the discharging paths is distributed along a respective straight line in a direction being parallel to the direction in which the bit lines are distributed.
25. A device as set forth in claim 6 or 7, wherein the junction circuit comprises a series connected diode and resistor, connected between a corresponding one of the second word lines and the discharging path and wherein one terminal of each of the junction members is connected to the corresponding second word line and the other terminal of each of the junction members is connected to the discharging path and wherein the dummy cells and junction members are located on respective memory-cell arrays such that the dummy cells and the junction circuits are arranged along straight lines in said second direction and wherein each of the discharging paths is distributed along a respective straight line in a direction being parallel to the direction in which the bit lines are distributed.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54154025A JPS5843835B2 (en) | 1979-11-28 | 1979-11-28 | semiconductor storage device |
| JP154025/79 | 1979-11-28 | ||
| JP54155340A JPS5838871B2 (en) | 1979-11-30 | 1979-11-30 | semiconductor storage device |
| JP155340/79 | 1979-11-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1175143A true CA1175143A (en) | 1984-09-25 |
Family
ID=26482456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000365235A Expired CA1175143A (en) | 1979-11-28 | 1980-11-21 | Integrated injection logic semiconductor memory device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4374431A (en) |
| EP (1) | EP0030422B1 (en) |
| CA (1) | CA1175143A (en) |
| DE (1) | DE3071976D1 (en) |
| IE (1) | IE52801B1 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5819794A (en) * | 1981-07-29 | 1983-02-04 | Fujitsu Ltd | Semiconductor memory |
| JPS58159294A (en) * | 1982-03-17 | 1983-09-21 | Hitachi Ltd | Semiconductor storage device |
| US4488263A (en) * | 1982-03-29 | 1984-12-11 | Fairchild Camera & Instrument Corp. | Bypass circuit for word line cell discharge current |
| JPS60177724A (en) * | 1984-02-24 | 1985-09-11 | Hitachi Ltd | Logic circuit |
| US4813017A (en) * | 1985-10-28 | 1989-03-14 | International Business Machines Corportion | Semiconductor memory device and array |
| JP2569538B2 (en) * | 1987-03-17 | 1997-01-08 | ソニー株式会社 | Memory device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5341968A (en) * | 1976-09-29 | 1978-04-15 | Hitachi Ltd | Semiconductor circuit |
| JPS54147741A (en) * | 1978-05-11 | 1979-11-19 | Fujitsu Ltd | Semiconductor integrated circuit unit |
| EP0005601B1 (en) * | 1978-05-11 | 1983-03-02 | Nippon Telegraph and Telephone Public Corporation | Semiconductor integrated memory circuit |
| US4168490A (en) * | 1978-06-26 | 1979-09-18 | Fairchild Camera And Instrument Corporation | Addressable word line pull-down circuit |
-
1980
- 1980-11-13 EP EP80304083A patent/EP0030422B1/en not_active Expired
- 1980-11-13 DE DE8080304083T patent/DE3071976D1/en not_active Expired
- 1980-11-18 IE IE2393/80A patent/IE52801B1/en unknown
- 1980-11-21 CA CA000365235A patent/CA1175143A/en not_active Expired
- 1980-11-26 US US06/210,678 patent/US4374431A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| IE802393L (en) | 1981-05-28 |
| DE3071976D1 (en) | 1987-07-02 |
| EP0030422A2 (en) | 1981-06-17 |
| EP0030422B1 (en) | 1987-05-27 |
| IE52801B1 (en) | 1988-03-16 |
| EP0030422A3 (en) | 1983-06-08 |
| US4374431A (en) | 1983-02-15 |
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