CA1246741A - Semiconductor memory device having serial data input and output circuit - Google Patents
Semiconductor memory device having serial data input and output circuitInfo
- Publication number
- CA1246741A CA1246741A CA000498754A CA498754A CA1246741A CA 1246741 A CA1246741 A CA 1246741A CA 000498754 A CA000498754 A CA 000498754A CA 498754 A CA498754 A CA 498754A CA 1246741 A CA1246741 A CA 1246741A
- Authority
- CA
- Canada
- Prior art keywords
- memory device
- semiconductor memory
- serial data
- serial
- gates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1075—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for multiport memories each having random access ports and serial ports, e.g. video RAM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
Abstract
SEMICONDUCTOR MEMORY DEVICE HAVING
SERIAL DATA INPUT AND OUTPUT CIRCUIT
ABSTRACT OF THE DISCLOSURE
A dual-port type semiconductor memory device having a serial data input and output circuit provided outside of a memory cell array and operable for high-speed serial data input and output of data in addition to random data access.
The semiconductor memory device includes a single decoding circuit triggering at least one gate for transferring data to be stored into or read from the memory cell array in a random data access mode and setting a single bit into a corresponding shift register in the serial data input and output circuit in a serial data input and output operation mode. Preferably, the decoding circuit is operated only during a time for operatively connecting bit lines and latch circuits in the serial data input and output circuit in the serial data input and output operation mode. The serial data input and output circuit is operable independently from the memory cell array, except during the time for operatively connecting the bit lines and the latch circuits through transfer gates, for serially inputting data to or outputting data from the latch circuits through serial data bus by sequentially triggering the serial gates from a certain gate designated by the corresponding shift register in response to the decoding circuit.
SERIAL DATA INPUT AND OUTPUT CIRCUIT
ABSTRACT OF THE DISCLOSURE
A dual-port type semiconductor memory device having a serial data input and output circuit provided outside of a memory cell array and operable for high-speed serial data input and output of data in addition to random data access.
The semiconductor memory device includes a single decoding circuit triggering at least one gate for transferring data to be stored into or read from the memory cell array in a random data access mode and setting a single bit into a corresponding shift register in the serial data input and output circuit in a serial data input and output operation mode. Preferably, the decoding circuit is operated only during a time for operatively connecting bit lines and latch circuits in the serial data input and output circuit in the serial data input and output operation mode. The serial data input and output circuit is operable independently from the memory cell array, except during the time for operatively connecting the bit lines and the latch circuits through transfer gates, for serially inputting data to or outputting data from the latch circuits through serial data bus by sequentially triggering the serial gates from a certain gate designated by the corresponding shift register in response to the decoding circuit.
Description
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SEMICONDUCTOR MEMORY DEVICE HAVING
SERIAL DATA INPUT AND OUTPUT CIRCUIT
, BACKGROUND OF THE INVENTION
1. Field of the Invention The present invention relates to a semicon-ductor memory device. More particularly, it relates to a semiconductor memory device having a high-speed serial data input and output circuit in addition to a random data input and output circuit.
SEMICONDUCTOR MEMORY DEVICE HAVING
SERIAL DATA INPUT AND OUTPUT CIRCUIT
, BACKGROUND OF THE INVENTION
1. Field of the Invention The present invention relates to a semicon-ductor memory device. More particularly, it relates to a semiconductor memory device having a high-speed serial data input and output circuit in addition to a random data input and output circuit.
2. Description of the Related Art An image data processing system or the like requires a large-capacity memory. To meet the re-quirement for a large-capacity memory at low cost, a dynamic random-access memory ~RAM) is extensively used.
In addition, in order to display a large amount of image data stored in the RAM on a cathode ray tube (CRT) display unit and perform image data proces9ing for the large amount of image data, such as gradients and filtering, high-speed data store and/or read-out are also highly required. A normal semiconductor memory device having a dynamic RAM and operable for random access for each unit of data, per se, however, suffers from a disadvantage of low-speed data store and/or read-out for a large amount of image data.
Recently, in order to overcome the above disadvantage, there are known so-called dual-port memory devices, i.e., semiconductor memory devices including a high-speed data input and output circuit provided outside the dynamic RAM. A dual-port memory device is operable for not only normal random access through a conventional port, but also high-speed serial data input and output used by a high-speed data input and output circuit through another port.
These prior art semiconductor memory devices, however, still suffer from disadvantages of complex ,. ~, -circuit configurations, use of a considerably large space on the semiconductor chip, which may lead to low integration, and high power consumption.
SUMMARY OE THE INVENTION
It is an object of the present invention to provide a semiconductor memory device having a serial data input and output circuit with low-cost, large-capacity memory cells; reduced complexity of the circuit configuration ~ and use of space on a chip; and low power consumption.
: 10 According to one particular aspect of the present invention, there is provided a semiconductor memory device comprising: memory cell array means for storing data and including a plurality of memory cells arranged in a matrix with a plurality of bit lines and a plurality of word lines; first decoder means, operatively connected to the memory cell array means, for selecting one of the word lines in response to an address signal; first data bus means for carrying data;
a plurality of first gates, operatively connected between the bit lines and the first data bus means, for transferring data to be stored or read between the bit ; lines and the first data bus means; serial data input . and/or output means for serially inputting or outputting data, including: a plurality of transfer gates, operatively connected to the bit lines and operable in a group in response to a transfer clock pulse; a plurality of latch circuits operatively connected to the transfer gates and holding data to be stored or read; serial data bus means for carrying data; a plurality of serial : 30 gates, having terminals operatively connected to the latch circuits and operatively connected to the serial data bus means; and a plurality of shift registers, ; connected in cascade to form a ring counter, for : :
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triggering the serial gates; and second decoding means, operatively connected to the first gates, for triggering at least one of the first gates in response to another address signal in a random access operation mode and operatively connected to the shift registers loading decoded data of the column address signal in the shift registers in response to the column address signal in a serial data input and output operation mode; the serial data input and/or output means operable independently from the memory cell array means, except during a time for operatively connecting the bit lines and the latch circuits through the transfer gates, for serially inputting data to or outputting data from the latch circuits through the serial data bus means by sequentially triggering the serial gates from one of the gates designated by the corresponding shift register.
Preferably, the decoding circuit is operated only during the time for operatively connecting the bit lines and the latch circuits in the serial data input and output operation mode.
BRIEF DESCRIPTION OF THE DRAWINGS
Other objects and features of the present invention will be described below in detail with reference to the accompanying drawings, in which:
Fig. 1, including la and lb, is a circuit diagram of a prior art semiconductor memory device having a high-speed serial input and output circuit;
Fig. 2 is a circuit diagram of a part of a column decoder shown in Fig. l;
Fig. 3, including 3a and 3b, is a circuit diagram of another prior art semiconductor memory device including two memory systems, each having a high-speed serial input and output circuit;
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Fig. 4, including 4a and 4b, is a circuit diagram of an embodiment of a semiconductor memory device having a high-speed serial input and output circuit in accordance with the present invention;
Fig. 5 is a circuit diagram of a part of a serial register array shown in Fig. 4;
Figs. 6a and 6b are views of waveforms of clock pulses applied to the serial register array shown in Fig. 5;
Fig. 7 is a circuit diagram of sense amplifiers, transfer gates, serial transfer gates, flip-flops, and shift registers shown in Fig. 4;
Fig. 8, including 8a and 8b, is a circuit diagram of another embodiment of a semiconductor memory device in accordance with the present invention;
Fig. 9 is a circuit diagram of an example of â
part of a column decoder shown in Fig 8;
Fig. 10 is a circuit diagram of another example of a part of a column decoder and a circuit relevant to the column decoder shown in Fig. 8;
Fig. 11, including lla and llb, is a circuit diagram of still another embodiment of a semiconductor memory device in accordance with the present invention;
Fig. 12 is a circuit diagram of sense amplifiers, transfer gates, serial transfer gates, flip-flops, and shift registers shown in Fig. 11;
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- 4a -Fig. 13, including 13a and 13b, is a circuit diagram of yet another embodiment of a semiconductor memory device in accordance with the present invention;
Figs. 14a and 14b are timing charts illus-trating the operation of a column decoder shown in Fig.
13;
Fig. 15, including 15a and 15b, is a circuit diagram of another embodiment of a semiconductor memory device in accordance with the present invention; and Fig. 16 is a schematic layout of a part of the semiconductor memory device shown in Fig. 11.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
Before describing preferred embodiments of the present invention, an explanation will be given of the prior art for reference.
Referring to Fig. 1, a prior art dual-port type dynamic RAM device includes a dynamic RAM portion 100 and a serial data input and output (I/O) portion 200.
The dynamic RAM portion 100 includes a dynamic RAM cell array 1, a sense amplifier group 2, first and second .. . .
~246~41 gate groups 3 and 4, a column decoder 5, a row decoder 6, an amplifier circuit 7, an I/O circuit 8, and a pair of data buses (Ds and Ds) 10A and 10B. The dynamic RAM
portion 100 is of an open-bit line type, wherein each pair of bit lines sLi and sLi extends from both sides of the corresponding sense amplifier SAi. The dynamic RAM cell array 1 includes 64 Kbit of memory cells (MC's) connected between bits lines BLo to BL255 and BLo to BL255 and word lines WLo to WL127 and WLo to WL127. The row decoder 6 receives a row address signal of eight bits RAo to RA7 and energizes a word line defined by the received row address signal. The column decoder 5 also receives a column address signal of eight bits CAo to CA7 and outputs a column decoded signal CDA
defined by the received column address signal to the first and second gate groups 3 and 4. The sense amplifier group 2 consists of 256 sense amplifiers SAo to SA255 , each operatively connected to a pair of corresponding bit lines BLi and BLi. The first gate 20 group 3 consists of 256 gates GAo to GA255 ~ each connected between the data bus 10A and the corresponding bit line BLi. The,second gate group 4 also consists of 256 gate9 GBo to GB255 ~ each connected between another data bus 10B and, thecorresponding bit line BLi.
In a random access mode for data read, the bit lines BLo to BL255 and BLo to BL255 P
A pair of word lines WLi and WLi and a pair of dummy word lines (not shown) are selected by the row decoder 6 in response to the row addresssignal of RAo to RA7 , connecting a plurality of memory cells MC between the selected word lines WLi and WLi and the bit lines - ' lt th voltage difference based on the content stored in each memory cell, i.e., "1" or ~0", appears on each bit line.
The sense amplifiers SAo to SA255 are switched to an active state and amplify the voltage differences on the bit lines. One of each pair of bit lines becomes a high 9! t~
~246~41 level, e.g., approximately the power source voltage level Vcc ~ and the other becomes a low level, for example, the ground level Vss. After that, the column decoder 5 is operated and outputs a column decoded signal CDi to gates of a pair of gates GAi and GBi in response to the received column address signal CAo to CA7 , resulting in the connection of the corresponding bit lines BLi and BLi to the data buses lOA and lOB through the corre-sponding gates GAi and GBi, respectively. Stored data in the selected memory cell is detected at the amplifier circuit 7 and is output to a port (not shown) through the I/O circuit 8. In a random access mode for data store, data to be stored is supplied to the port and is stored in the corresponding memory cell through the I/O circuit 8 and the amplifier circuit 7.
The serial I/O portion 200 is provided outside of the dynamic RAM portion 100. The serial I/O portion 200 includes transfer gate group 21A, a latch circuit group 22, a serial gate group 23, a shift register group 24, another column decoder 25, an amplifier circuit 26, and an I/O circuit 27. The transfer gate group 21A consists of 256 gates TGAo to TGA255 connected to the bit lines BLo to BL255. The latch circuit group 22 consists of 256 flip-flops FFo to FF255 ~ each having a set input terminal connected to the corresponding transfer gate TGAi. The serial gate group 23 consists of 256 gates SGo to SG255 , each having a terminal connected to an output terminal of the corresponding flip-flop FFi and another terminal connected to a serial data bus (SDB) 20. The shift register group 24 consists of 256 shift registers SRo to SR255 connected in cascade to form a ring counter.
In a serial access mode for data read, the bit lines are precharged and the pair of word lines and the dummy word lines are selected, whereby a plurality of data in the memory cells selected by the word lines are sensed at the sense amplifiers, set forth above. As a , 12467~1 , transfer clock signal TCLXA is supplied to the transfer gate group 21A, 256 gates TGAo to TGA255 ~ which are formed by metal-oxide semiconductor field-effect transistors (MOS FET's), are turned ON during a time for the application of a transfer clock signal TCLKA , trans-ferring 256 data bits on the bit lines BLo to BL255 to the flip-flops FFo to FF255 , thus holding the data in the flip-flops. The column decoder 25 receives the column address signal of CAo to CA7 , independently from the application of it to the column decoder 5 and outputs a-column decoded signal CDBj defined by the received column address signal of CAo to CA7 to the corresponding shift register SRj. The column decoded signal CDBj indicates a first location of data read from the flip-flops. Upon receipt of the column decoded signal CDBj , the j-th shift register SRj energizes a j-th serial gate SGj to turn the gate ON, outputting data stored in j-th flip-flop FFj to the serial data bus 20. The data on the serial data bus 20 is amplified at the amplifier circuit 26 and output as an output data SSOUT to another port through the I/O circuit 27. As a clock signal is supplied to the shift register group 24, data of "1" in the j-th shift register SRj is transferred to the (j+l)-th shift register SRj+l , outputting the next data stored in the (j+l)-th flip-flop FFj+l to another port. Similar operation may follow consecu-tively, serially outputting up to 256 data bits stored in the flip-flops FFo to FF255 to another port without further transferring data from the dynamic RAM cell array 1. Accordingly, a large amount of data can be easily and rapidly output. A large data store may be also effected in a way similar to that set forth above.
Provision of the above serial data I/O portion 200 enables high-speed data input and output in addition to a normal random access operation in the dynamic RAM
portion 100. This, however, increases the complexity of the circuit and thus reduces the integration of the !' ~ 7 ,~ .
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circuit in a chip. It also results in high power consumption in the chip. These disadvantages are serious ones in semiconductor memory devices, especially dynamic RAM devices.
In particular, the dynamic RAM device shown in Fig. 1 is provided with two independent column decoders 5 and 25, one column decoder 5 activating the gate groups 3 and 4 and another column decoder 25 designating a start location for serial data input and output. Figure 2 is a circuit diagram of a part of the column decoder 5. In Fig. 2, i- and j-th column decoding circuits are shown.
A plurality of pairs of column address signal lines Ao and Ao to A7 and A7 extend in parallel in the column decoder 5. With respect to the i-th column decoding circuit, eight transistors Ql to Q8 are provided between lines Ll and L2. Gates thereof are connected to one side of the plurality of pairs of column address signal lines so that an i-th column decoded signal CDAi is output when the plurality of pairs of column address signal Ao and Ao to A7 and A7 indicate the number "i".
In the column decoder 5, 256 column decoding circuits, each of which is formed similar to the i- or j-th column decoding circuit shown in Fig. 2, are provided.
Another column decoder 25 is also provided with 256 column decoding circuits, each of which is formed similar to that in the column decoder 5.
Referring to Fig. 3, two dynamic RAM devices are formed in a chip. Each dynamic RAM device includes a dynamic RAM portion lOOA, lOOB and a serial data I/O
portion 200A, 200B. Each dynamic RAM device has the same circuit construction as that shown in Fig. 1. The dynamic RAM devices are operable independently from each other. In Fig. 3, four column decoders 5A, 5B, 25A, and 25B are provided. The column decoders 5A and 5B activate gates for data buses, while the column decoders 25A and 25B designate start locations of serial data input and output. Each column decoder is naturally formed similar 4~741 to that shown in Fig. 2.
Referring back to Fig. 1, note that the two column decoders 5 and 25 never operate at the same time. The column decoder 5 may operate in a random data access mode. The column decoder 25 may operate in a serial data input and output operation mode and in a short period for designating the first data input and output location to the corresponding shift register. This allows the deletion of the column decoder 25 and common use of the column decoder 5 for the random data access as well as the serial data input and output. In addition, the common use of the column decoder 5 will cause no conflict between the random access means and the serial access means as long as only a single set of column address receiving circuitry is provided in the semiconductor memory device since only one column address can be applied to the semiconductor memory device at a time regardleqs of the access mode. This concept can also be applied to the dynamic RAM devices shown in Fig. 3.
Preferred embodiments of the present invention will now be described in detail.
Referring to Fig. 4, a circuit diagram of an embodiment of a semiconductor memory device is shown.
The semiconductor memory device in Fig. 4 is of an open-bit line type dynamic RAM device as shown in Fig. 1.
The dynamic RAM device in Fig. 4 includes a dynamic RAM
portion 100 and a serial data I/O portion 200'. The dynamic RAM portion 100 is identical to that shown in Fig. 1. On the other hand, the serial data I/O
portion 200' does not include the column decoder 25 shown in Fig. 1. The shift register group 24 receives column decoded signals CDo to CD255 from the column decoder 5 instead of the column decoder 25.
The decoding circuit shown in Fig. 2 is still used for the column decoder 5 in Fig. 4. The operation of the i-th column decoding circuit will be described. In an initial condition, a reset pulse R is supplied to ,.. . . .
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gates of MOS transistors Q12 and Q13~ resulting in the column decoded signal CDi being the low level of the ground level Vss and the potential of the line Ll being pulled-up to the high level Vcc. When the column address signal Ao~ Ao to A7, A7 does not coincide with the number "i", at least one of the MOS transistors Ql to Q8 is turned ON, thus a short-circuit is created between the lines Ll and L2, whereupon a column decoded signal CDi of a low level is output, unless a column decoder selection signal CDS of high level is supplied to a source of MOS transistor Qlo. On the other hand, when the column address signal indicates the number "i", all transistors Ql to Q8 are turned OFF, thus the line Ll is kept at the high level. This high voltage is supplied to a gate of the transistor Qlo through a MOS transistor Qll-Accordingly, upon receipt of the column decoder selectionsignal CDS of the high level, a column decoded signal CDi of the high level is output. In this case, other column decoded signals CDo to CDi_l and CDi+l to CD2ss are naturally the low level. As can be seen from the description, the column decoding circuit is formed as a NOR gate circuit. Referring back to Fig. 4, the selected column decoded signal CDi is used foe gating i-th gates GAi and GBi in the gate groups 3 i and 4 in the random access operation mode or for loading into the i-th shift register SRi in the serial data input and output operation mode.
Referring to Fig. 5, the circuit of the i-th and (i+l)-th shift registers SRi and SRi+l is shown. The i-th shift register SRi includes a depletion (D)-type transistor Q50, a pair of enhancement (E)-type transistors Qsl and Qs2 forming a flip-flop, E-type transistors Q53 to Qss, series-connected E-type transistors Qs6 and Qs7 , an E-type transistor Qs8, an E-type transistor Qsg , a pair of E-type transistors Q60 and Q61 forming a flip-flop, a D-type transistor Q62~ and a capacitor C50 of a depletion layer of a .
,..' ~'7 transistor. A source of the transistor Q53 is supplied with a first clock pulse Pl for driving shift registers. A gate of the transistor Q56 is supplied with a transfer clock signal TLK' which is the high level in the serial data input and output operation mode and allows loading of one bit into a shift register in response to the column decoded signal. A gate of the transistor Q57 receives the i-th column decoded signal CDi. The (i+l)-th shift register SRi+
has a similar circuit construction to that of the shift régister SRi. However, a transistor Q73 receives a second clock pulse P2 for driving shift registers. The D-type tranSistor Q50~ Q62~ Q70, and Q82 can be replaced with resistors.
The operation of the shift registers shown in Fig. 5 will be described with reference to Figs. 6a and 6b. Figures 6a and 6b are views of waveforms of the first and second clock pulses Pl and P2 for driving the shift registers. The clock pulses Pl and P2 differ in phase by 180.
In an initial condition, the reset pulse R is supplied to gates of transistors Qss and Q7s, resulting in voltage levels at nodes SPi and SLi in the register '~ SRi and SPi+l and SLi+l in the register SRi+l being at the low level, the flip-flops formed by the pairs of transistors Q51~ Q52; Q60~ Q61; Q71, Q72; and Q80, Q81 being reset, and thus pointer outputs POi and P0i+l, connected to gates of i-th and (i+l)-th serial gates SGi and SGi+l in the serial data gate group 23, being the low level. When a column decoded signal CDi of the high level is supplied to the gate of the transistor Q57 and the clock pulse TLK' is supplied to the gate of the transistor Q56~ the node SPi is charged up, rendering the flip-flop of the transistors Q60 and Q61 in the SET state and charging the node SLi up to the high level.
Due to the application of the first clock pulse Pl to the source of the transistor Q53, the flip-flop of the transistors Q51 and Q52 is set and thus the i-th ; ` ~
-' ~246741 pointer output POi of the high level is output. Due to the application of the pointer output POi of the high level to the i-th gate SGi, the content previously stored in the i-th flip-flop FFi in the flip-flop group 22 is transferred to the serial data bus 20, outputting the data on the serial data bus 20 to another port through the amplifier circuit 26 and the I/O circuit 27. Simultaneously, the i-th pointer output POi is supplied to a gate of the transistor Q78 parallel-connected to a series circuit of the transistors Q76 and Q77, in the adjoining shift register SRi+l, charging the nodes SPi+l and SLi+l up at the high level and rendering the flip-flop of the transistors Q80 and Q81 in the SET state. Due to the application of the second clock P2 to the transistor Q73, the flip-flop of the transistors Q71 and Q72 is set, outputting the (i+l)-th pointer output P0i+l of the high level to the (i~l)-th gate SGi+l. At this time, the (i+l)-th pointer command P0i+l is supplied to a gate of the transistor Qsg forming a reset gate of the flip-flop of the transistors Q60 and Q61. The flip-flop of the transistors Q60 and Q61 as well as the flip-flop of the translstors Q51 and Q52 in the preceding step of the shift register SRi are reset. As a result, the i-th pointer output POi is restored to the low level. This means that the logical "1" data stored in the shift register SRi is shifted to the following shift register , 25 SRi+l. In this case, the (i+l)-th data stored in the (i+l)-th flip-flop FFi+l i8 output to another port in the same way as described above. When the first clock Pl is supplied to the (i+2)-th shift register SRi+2 , the (i+2)-th pointer output P0i+2 of the high level is output and the (i+l)-th pointer output P0i+l becomes the low level. The above operation is continued for a desired number of times for serially outputting desired data.
Referring to Fig. 7, the circuit of the o-th flip-` 1246741 ~, flop FFo and the connection between the flip-flop FFo and the relevant circuits, i.e., the serial data gates SGAo and SGBo ~ the transfer gate TGo ~ the sense amplifier SAo I and the serial data buses SDB and SDs, are shown. The flip-flop FFo consists of MOS tran-sistors Q41 and Q42 and is connected to an active pull-up circuit 22a. In Fig. 4, the serial data bus (SDB) 20 is shown as a single data bus. In Fig. 7, however, complementary-type data buses SDB and SDB, which may increase the reliability of sensing data, are shown. Accordingly, a pair of serial data gates SGAo and SGs0 connecting the flip-flop FFo to the data buses SDB and SDB are provided. The complementary serial data buses SDB and SDB can naturally be applied to the circuit shown in Fig. 4.
As can be seen from the description with reference to Figs. 4 to 7, in spite of the deletion of the column decoder 25 shown in Fig. 1, the dynamic RAM device can effect both the random data access operation and high-speed serial data input and output operation. Due tothe deletion of the column decoder 25 and common use of the column decoder 5 for the random data access operation and the designation of the first location to the shift registers in the serial data input and output operation mode, there is achieved a dynamic RAM device with reduced circuit complexity, use of space, and power consumption.
The circuits of the shift registers and the flip-flops FF are simple. This may increase the above effects.
Figure 8 is a circuit diagram of another embodiment of a semiconductor memory device in accordance with the present invention. The semiconductor memory device is an open-bit line type dual port dynamic RAM device similar to that in Fig. 4. The dynamic RAM device in question, however, includes four data buses (DBl to DB4) 101 to 104, , , ~1 -- lZ~741 four amplifier circuits 71 to 74 , and a multiplexer 9 in a dynamic RAM portion lOOb. The dynamic RAM device also includes four serial data buses (SDBl to SD84) 20 to 204 , four amplifier circuits 261 to 264 , and a multiplexer 28 in a serial data I/O portion 200b. The addition of the data buses 101 to 104 and the serial data buses 201 to 204 greatly improves the access time of the dynamic RAM cell. The multiplexer 9 performs the multiplexing of data from and to the amplifier circuits 71 to 74 in a predetermined time interval during the random access mode. The multiplexer 28 performs the multiplexing of data from and to the amplifier circuits 261 to 264 in a predetermined time interval during the serial data input and output mode.
Due to the addition of the data buses, the circuit connection of first and second gate groups 3A and 4A is somewhat changed from that in Fig. 4. The connection of the serial data gate group 23 to the serial data buses 201 to 204 is also changed. Four gates, such as Go and Gl in the first gate group 3A and G2 and G3 in the second gate group 4A, may be triggered in a group by one column decoded signal, such as CDo. Similarly, four serial gates, such as SGo to SG3 in the serial data gate group 23, may be triggered in a group. Accordingly, a column decoder 5' does not require the column address signal of A6 ~ A6 and A7 , A7 , thus is simplified as shown in Fig. 9. A shift register group 24' has, accordingly, only 64 shift registers SRo to SR63.
The principle of the operation of the dynamic RAM
device shown in Fig. 8 is the same as that of the dynamic RAM device shown in Fig. 4, thus a description thereof is omitted.
Referring to Fig. 10, a circuit diagram of another example showing a part of a column decoder 5" corre-sponding to that in Fig. 9 and a predecoder circuit 50are shown. The predecoder circuit 50 includes an address drive clock circuit 51, tandem-connected gates 52 ~24674~
and 53 for shifting the level of a signal output from the circuit 51, a column decoder activating circuit 54 generating the column decoder activation signal CDA, and a 1/4 decoder 55. The 1~4 decoder 55 receives the column address signal A6 and A7 and the column decoder activation signal CDA and outputs column decoder selection signals CDSo to CDS3. In the column decoder 5", MOS transistors Q90 to Q95 the connection of which is represented by a general form, correspond to, for example, transistors Ql to Q6 shown in Fig~ 9.
In order to improve the operational reliability, a flip-flop circuit of MOS transistors Qls and Q16 and a capacitor C10 are provided. Another flip-flop circuit of MOS transistors Q35 and Q36 and a capacitor C30 are also provided. Other transistors Q14 ' Q17 ~ Q18 ~ and Ql9 correspond to the transistors Q12 Qlo ~ Qll ~ and Q13 shown in Fig. 9, respectively.
Referring to Fig. 11, a folded-bit line type dual port dynamic RAM device is shown. Each pair of bit lines, such as BLo and BLo, are folded at the sense amplifier SAo. This type of bit line arrangement may increase the resistance noise. The dynamic RAM device includes a dynamic ~A~
portion 100C and a serial data I/O portion 200C.
Referring to Fig~ 12, a part of the circuit shown in Fig. 11 is shown in detail, the circuit of Fig. 12 corresponds to that of Fig. 7. The transfer gate group 21' in Fig. 11 consists of 256 pairs of transfer gates, each pair of gates, such as TGAo and TGBo ~ being provided between the sense amplifier SAo and the flip-flop FFo and connected to the pair of bit lines BLo and BLo. A column decoder 5 activates either a gate group 3 connected between a sense amplifier group 2 and a data bus 10 in the dynamic RAM portion 100C or a shift register group 24 in the serial data input and output portion 200C, in response to the random access mode or the serial data input and output mode. Other ` 1~46741 circuit constructions and operations are similar to those of Fig. 4.
Referring to Fig. 13, another folded-bit type dual port dynamic RAM device is shown. The dynamic RAM
device includes four data buses 101 to 104 and four serial data buses 201 to 204, as shown in Fig. 8. Accordingly, the circuit construction and operation of Fig. 8 can be applied to the dynamic RAM device in Fig. 13 in the same way, except for the connection between the bit lines and the transfer gates, shown in Fig. 12.
Referring to Figs. 14a and 14b, the operation timing of the common column decoder 5' in Fig. 13 will be described.
In Figs. 14a and 14b, shaded portions represent operation times of the column decoder 5'. Figure 14a represents operation times for the random access in a dynamic RAM
portion lOOd. Each operation time for random access is Tl.
Figure 14b represents operation times for the serial data input and output. Each operation time of the column decoder for the serial data input and output is T2. The subsequent operation time T3, not the shaded portion, shows an operation ; for serial data input and output after once storing 256 data bits from the dynamic RAM cell portion 1' into 256 flip-flops FFo to FF255-The dynamic RAM cell portion 1' includes 64 Kbits of memory cells. Assuming the random access for four data bits (in parallel) requires 250 nanoseconds (ns), the above time Tl is 250 ns. Assuming also the time for selecting one pair of word lines WLi and WLi and transferring 256 data on the bit lines BLo, BLo to 8L2ss, BL2ss to the flip-flops FFo to FF2ss requires 250 ns, the time T2 is also 250 ns. Furthermore, assuming the time for serially outputting 256 data bits stored in the flip-flops to another port through amplifier circuits 261 to ; 264 , a multiplexer 28, and an I/O circuit 27 requires 40 ns x 256, i.e., 10.24 microseconds (~s), the time T3 .~
~246741 - l? -is 10.24 ~s. When random accesses are requested at thetimes tl and t2 ~ the column decoder 5' operates for the time Tl for each request. When a serial data input and output is requested at the time t3 , the column decoder 5' operates for the time T2 ~ equal to the time Tl. The subsequent serial data transfer in the serial data input and output portion 200d is effected over a considerably long time T3. Note that during the time T3 , the column decoder 5' is available for the random access mode operation. Even if use of the column decoder 5' overlapps at the time t3 , the random access operation may be delayed by the time ll.
On the contrary, the serial data input and output operation at the time t5 may be delayed by the time T 2.
However, these time delays T l and l2 are less than 250 ns in this example. Consequently, the actual decline in performance during the random access and/or the serial data input and output, even with overlapping of requests, is negligible.
If the multiplexers 9 and 28 are omitted and four input or output operations are effected in parallel, the above times Tl , T2 ~ and T3 are shortened.
Referring to Fig. 15, a circuit of two dynamic RAM
devices on a chip in accordance with the present invention, which is improved over the circuit of the dynamic RAM devices shown in Fig. 3, is shown. Each dynamic RAM device includes a dynamic RAM portion 100e, 100f and a serial data input and output portion 200e, 200f. In Fig. 15, a single column decoder 5 is provided for the two dynamic RAM devices, resulting in a great reduction in space used by the circuit.
In the above description, the circuit configurations and the operations of the embodiments were discussed.
In addition, consideration must be given to a circuit arrangemen~ minimizing the lines between the column decoder and the gate group(s) 3 (and 4) connected to the data bus 10, lines between the column decoder and the . ~ .
lZ46741 shift register group 24, lines between the sense amplifier group 2 and the transfer gate group 21, and other lines. Figure 16 is a part of a schematic lavout of an example concerning the circuit shown in Fig. 11.
The column decoder 5 is provided between the gate group 3 and the shift register group 24. The serial gate group 23 is provided adjacent to the flip-flop group 24. The many bit lines between the sense amplifier group 2 and the transfer gate group 21' and the lines between the transfer gate group 21' and the flip-flop group 22 should also be minimized in length.
Many widely different embodiments of the present invention may be constructed without departing from the spirit and scope of the present invention. It should be understood that the present invention is not limited to the specific embodiments described in this specification, except as defined in the appended claims.
In addition, in order to display a large amount of image data stored in the RAM on a cathode ray tube (CRT) display unit and perform image data proces9ing for the large amount of image data, such as gradients and filtering, high-speed data store and/or read-out are also highly required. A normal semiconductor memory device having a dynamic RAM and operable for random access for each unit of data, per se, however, suffers from a disadvantage of low-speed data store and/or read-out for a large amount of image data.
Recently, in order to overcome the above disadvantage, there are known so-called dual-port memory devices, i.e., semiconductor memory devices including a high-speed data input and output circuit provided outside the dynamic RAM. A dual-port memory device is operable for not only normal random access through a conventional port, but also high-speed serial data input and output used by a high-speed data input and output circuit through another port.
These prior art semiconductor memory devices, however, still suffer from disadvantages of complex ,. ~, -circuit configurations, use of a considerably large space on the semiconductor chip, which may lead to low integration, and high power consumption.
SUMMARY OE THE INVENTION
It is an object of the present invention to provide a semiconductor memory device having a serial data input and output circuit with low-cost, large-capacity memory cells; reduced complexity of the circuit configuration ~ and use of space on a chip; and low power consumption.
: 10 According to one particular aspect of the present invention, there is provided a semiconductor memory device comprising: memory cell array means for storing data and including a plurality of memory cells arranged in a matrix with a plurality of bit lines and a plurality of word lines; first decoder means, operatively connected to the memory cell array means, for selecting one of the word lines in response to an address signal; first data bus means for carrying data;
a plurality of first gates, operatively connected between the bit lines and the first data bus means, for transferring data to be stored or read between the bit ; lines and the first data bus means; serial data input . and/or output means for serially inputting or outputting data, including: a plurality of transfer gates, operatively connected to the bit lines and operable in a group in response to a transfer clock pulse; a plurality of latch circuits operatively connected to the transfer gates and holding data to be stored or read; serial data bus means for carrying data; a plurality of serial : 30 gates, having terminals operatively connected to the latch circuits and operatively connected to the serial data bus means; and a plurality of shift registers, ; connected in cascade to form a ring counter, for : :
' ~5~ ' "
triggering the serial gates; and second decoding means, operatively connected to the first gates, for triggering at least one of the first gates in response to another address signal in a random access operation mode and operatively connected to the shift registers loading decoded data of the column address signal in the shift registers in response to the column address signal in a serial data input and output operation mode; the serial data input and/or output means operable independently from the memory cell array means, except during a time for operatively connecting the bit lines and the latch circuits through the transfer gates, for serially inputting data to or outputting data from the latch circuits through the serial data bus means by sequentially triggering the serial gates from one of the gates designated by the corresponding shift register.
Preferably, the decoding circuit is operated only during the time for operatively connecting the bit lines and the latch circuits in the serial data input and output operation mode.
BRIEF DESCRIPTION OF THE DRAWINGS
Other objects and features of the present invention will be described below in detail with reference to the accompanying drawings, in which:
Fig. 1, including la and lb, is a circuit diagram of a prior art semiconductor memory device having a high-speed serial input and output circuit;
Fig. 2 is a circuit diagram of a part of a column decoder shown in Fig. l;
Fig. 3, including 3a and 3b, is a circuit diagram of another prior art semiconductor memory device including two memory systems, each having a high-speed serial input and output circuit;
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Fig. 4, including 4a and 4b, is a circuit diagram of an embodiment of a semiconductor memory device having a high-speed serial input and output circuit in accordance with the present invention;
Fig. 5 is a circuit diagram of a part of a serial register array shown in Fig. 4;
Figs. 6a and 6b are views of waveforms of clock pulses applied to the serial register array shown in Fig. 5;
Fig. 7 is a circuit diagram of sense amplifiers, transfer gates, serial transfer gates, flip-flops, and shift registers shown in Fig. 4;
Fig. 8, including 8a and 8b, is a circuit diagram of another embodiment of a semiconductor memory device in accordance with the present invention;
Fig. 9 is a circuit diagram of an example of â
part of a column decoder shown in Fig 8;
Fig. 10 is a circuit diagram of another example of a part of a column decoder and a circuit relevant to the column decoder shown in Fig. 8;
Fig. 11, including lla and llb, is a circuit diagram of still another embodiment of a semiconductor memory device in accordance with the present invention;
Fig. 12 is a circuit diagram of sense amplifiers, transfer gates, serial transfer gates, flip-flops, and shift registers shown in Fig. 11;
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- 4a -Fig. 13, including 13a and 13b, is a circuit diagram of yet another embodiment of a semiconductor memory device in accordance with the present invention;
Figs. 14a and 14b are timing charts illus-trating the operation of a column decoder shown in Fig.
13;
Fig. 15, including 15a and 15b, is a circuit diagram of another embodiment of a semiconductor memory device in accordance with the present invention; and Fig. 16 is a schematic layout of a part of the semiconductor memory device shown in Fig. 11.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
Before describing preferred embodiments of the present invention, an explanation will be given of the prior art for reference.
Referring to Fig. 1, a prior art dual-port type dynamic RAM device includes a dynamic RAM portion 100 and a serial data input and output (I/O) portion 200.
The dynamic RAM portion 100 includes a dynamic RAM cell array 1, a sense amplifier group 2, first and second .. . .
~246~41 gate groups 3 and 4, a column decoder 5, a row decoder 6, an amplifier circuit 7, an I/O circuit 8, and a pair of data buses (Ds and Ds) 10A and 10B. The dynamic RAM
portion 100 is of an open-bit line type, wherein each pair of bit lines sLi and sLi extends from both sides of the corresponding sense amplifier SAi. The dynamic RAM cell array 1 includes 64 Kbit of memory cells (MC's) connected between bits lines BLo to BL255 and BLo to BL255 and word lines WLo to WL127 and WLo to WL127. The row decoder 6 receives a row address signal of eight bits RAo to RA7 and energizes a word line defined by the received row address signal. The column decoder 5 also receives a column address signal of eight bits CAo to CA7 and outputs a column decoded signal CDA
defined by the received column address signal to the first and second gate groups 3 and 4. The sense amplifier group 2 consists of 256 sense amplifiers SAo to SA255 , each operatively connected to a pair of corresponding bit lines BLi and BLi. The first gate 20 group 3 consists of 256 gates GAo to GA255 ~ each connected between the data bus 10A and the corresponding bit line BLi. The,second gate group 4 also consists of 256 gate9 GBo to GB255 ~ each connected between another data bus 10B and, thecorresponding bit line BLi.
In a random access mode for data read, the bit lines BLo to BL255 and BLo to BL255 P
A pair of word lines WLi and WLi and a pair of dummy word lines (not shown) are selected by the row decoder 6 in response to the row addresssignal of RAo to RA7 , connecting a plurality of memory cells MC between the selected word lines WLi and WLi and the bit lines - ' lt th voltage difference based on the content stored in each memory cell, i.e., "1" or ~0", appears on each bit line.
The sense amplifiers SAo to SA255 are switched to an active state and amplify the voltage differences on the bit lines. One of each pair of bit lines becomes a high 9! t~
~246~41 level, e.g., approximately the power source voltage level Vcc ~ and the other becomes a low level, for example, the ground level Vss. After that, the column decoder 5 is operated and outputs a column decoded signal CDi to gates of a pair of gates GAi and GBi in response to the received column address signal CAo to CA7 , resulting in the connection of the corresponding bit lines BLi and BLi to the data buses lOA and lOB through the corre-sponding gates GAi and GBi, respectively. Stored data in the selected memory cell is detected at the amplifier circuit 7 and is output to a port (not shown) through the I/O circuit 8. In a random access mode for data store, data to be stored is supplied to the port and is stored in the corresponding memory cell through the I/O circuit 8 and the amplifier circuit 7.
The serial I/O portion 200 is provided outside of the dynamic RAM portion 100. The serial I/O portion 200 includes transfer gate group 21A, a latch circuit group 22, a serial gate group 23, a shift register group 24, another column decoder 25, an amplifier circuit 26, and an I/O circuit 27. The transfer gate group 21A consists of 256 gates TGAo to TGA255 connected to the bit lines BLo to BL255. The latch circuit group 22 consists of 256 flip-flops FFo to FF255 ~ each having a set input terminal connected to the corresponding transfer gate TGAi. The serial gate group 23 consists of 256 gates SGo to SG255 , each having a terminal connected to an output terminal of the corresponding flip-flop FFi and another terminal connected to a serial data bus (SDB) 20. The shift register group 24 consists of 256 shift registers SRo to SR255 connected in cascade to form a ring counter.
In a serial access mode for data read, the bit lines are precharged and the pair of word lines and the dummy word lines are selected, whereby a plurality of data in the memory cells selected by the word lines are sensed at the sense amplifiers, set forth above. As a , 12467~1 , transfer clock signal TCLXA is supplied to the transfer gate group 21A, 256 gates TGAo to TGA255 ~ which are formed by metal-oxide semiconductor field-effect transistors (MOS FET's), are turned ON during a time for the application of a transfer clock signal TCLKA , trans-ferring 256 data bits on the bit lines BLo to BL255 to the flip-flops FFo to FF255 , thus holding the data in the flip-flops. The column decoder 25 receives the column address signal of CAo to CA7 , independently from the application of it to the column decoder 5 and outputs a-column decoded signal CDBj defined by the received column address signal of CAo to CA7 to the corresponding shift register SRj. The column decoded signal CDBj indicates a first location of data read from the flip-flops. Upon receipt of the column decoded signal CDBj , the j-th shift register SRj energizes a j-th serial gate SGj to turn the gate ON, outputting data stored in j-th flip-flop FFj to the serial data bus 20. The data on the serial data bus 20 is amplified at the amplifier circuit 26 and output as an output data SSOUT to another port through the I/O circuit 27. As a clock signal is supplied to the shift register group 24, data of "1" in the j-th shift register SRj is transferred to the (j+l)-th shift register SRj+l , outputting the next data stored in the (j+l)-th flip-flop FFj+l to another port. Similar operation may follow consecu-tively, serially outputting up to 256 data bits stored in the flip-flops FFo to FF255 to another port without further transferring data from the dynamic RAM cell array 1. Accordingly, a large amount of data can be easily and rapidly output. A large data store may be also effected in a way similar to that set forth above.
Provision of the above serial data I/O portion 200 enables high-speed data input and output in addition to a normal random access operation in the dynamic RAM
portion 100. This, however, increases the complexity of the circuit and thus reduces the integration of the !' ~ 7 ,~ .
~ ~L2~674~
circuit in a chip. It also results in high power consumption in the chip. These disadvantages are serious ones in semiconductor memory devices, especially dynamic RAM devices.
In particular, the dynamic RAM device shown in Fig. 1 is provided with two independent column decoders 5 and 25, one column decoder 5 activating the gate groups 3 and 4 and another column decoder 25 designating a start location for serial data input and output. Figure 2 is a circuit diagram of a part of the column decoder 5. In Fig. 2, i- and j-th column decoding circuits are shown.
A plurality of pairs of column address signal lines Ao and Ao to A7 and A7 extend in parallel in the column decoder 5. With respect to the i-th column decoding circuit, eight transistors Ql to Q8 are provided between lines Ll and L2. Gates thereof are connected to one side of the plurality of pairs of column address signal lines so that an i-th column decoded signal CDAi is output when the plurality of pairs of column address signal Ao and Ao to A7 and A7 indicate the number "i".
In the column decoder 5, 256 column decoding circuits, each of which is formed similar to the i- or j-th column decoding circuit shown in Fig. 2, are provided.
Another column decoder 25 is also provided with 256 column decoding circuits, each of which is formed similar to that in the column decoder 5.
Referring to Fig. 3, two dynamic RAM devices are formed in a chip. Each dynamic RAM device includes a dynamic RAM portion lOOA, lOOB and a serial data I/O
portion 200A, 200B. Each dynamic RAM device has the same circuit construction as that shown in Fig. 1. The dynamic RAM devices are operable independently from each other. In Fig. 3, four column decoders 5A, 5B, 25A, and 25B are provided. The column decoders 5A and 5B activate gates for data buses, while the column decoders 25A and 25B designate start locations of serial data input and output. Each column decoder is naturally formed similar 4~741 to that shown in Fig. 2.
Referring back to Fig. 1, note that the two column decoders 5 and 25 never operate at the same time. The column decoder 5 may operate in a random data access mode. The column decoder 25 may operate in a serial data input and output operation mode and in a short period for designating the first data input and output location to the corresponding shift register. This allows the deletion of the column decoder 25 and common use of the column decoder 5 for the random data access as well as the serial data input and output. In addition, the common use of the column decoder 5 will cause no conflict between the random access means and the serial access means as long as only a single set of column address receiving circuitry is provided in the semiconductor memory device since only one column address can be applied to the semiconductor memory device at a time regardleqs of the access mode. This concept can also be applied to the dynamic RAM devices shown in Fig. 3.
Preferred embodiments of the present invention will now be described in detail.
Referring to Fig. 4, a circuit diagram of an embodiment of a semiconductor memory device is shown.
The semiconductor memory device in Fig. 4 is of an open-bit line type dynamic RAM device as shown in Fig. 1.
The dynamic RAM device in Fig. 4 includes a dynamic RAM
portion 100 and a serial data I/O portion 200'. The dynamic RAM portion 100 is identical to that shown in Fig. 1. On the other hand, the serial data I/O
portion 200' does not include the column decoder 25 shown in Fig. 1. The shift register group 24 receives column decoded signals CDo to CD255 from the column decoder 5 instead of the column decoder 25.
The decoding circuit shown in Fig. 2 is still used for the column decoder 5 in Fig. 4. The operation of the i-th column decoding circuit will be described. In an initial condition, a reset pulse R is supplied to ,.. . . .
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gates of MOS transistors Q12 and Q13~ resulting in the column decoded signal CDi being the low level of the ground level Vss and the potential of the line Ll being pulled-up to the high level Vcc. When the column address signal Ao~ Ao to A7, A7 does not coincide with the number "i", at least one of the MOS transistors Ql to Q8 is turned ON, thus a short-circuit is created between the lines Ll and L2, whereupon a column decoded signal CDi of a low level is output, unless a column decoder selection signal CDS of high level is supplied to a source of MOS transistor Qlo. On the other hand, when the column address signal indicates the number "i", all transistors Ql to Q8 are turned OFF, thus the line Ll is kept at the high level. This high voltage is supplied to a gate of the transistor Qlo through a MOS transistor Qll-Accordingly, upon receipt of the column decoder selectionsignal CDS of the high level, a column decoded signal CDi of the high level is output. In this case, other column decoded signals CDo to CDi_l and CDi+l to CD2ss are naturally the low level. As can be seen from the description, the column decoding circuit is formed as a NOR gate circuit. Referring back to Fig. 4, the selected column decoded signal CDi is used foe gating i-th gates GAi and GBi in the gate groups 3 i and 4 in the random access operation mode or for loading into the i-th shift register SRi in the serial data input and output operation mode.
Referring to Fig. 5, the circuit of the i-th and (i+l)-th shift registers SRi and SRi+l is shown. The i-th shift register SRi includes a depletion (D)-type transistor Q50, a pair of enhancement (E)-type transistors Qsl and Qs2 forming a flip-flop, E-type transistors Q53 to Qss, series-connected E-type transistors Qs6 and Qs7 , an E-type transistor Qs8, an E-type transistor Qsg , a pair of E-type transistors Q60 and Q61 forming a flip-flop, a D-type transistor Q62~ and a capacitor C50 of a depletion layer of a .
,..' ~'7 transistor. A source of the transistor Q53 is supplied with a first clock pulse Pl for driving shift registers. A gate of the transistor Q56 is supplied with a transfer clock signal TLK' which is the high level in the serial data input and output operation mode and allows loading of one bit into a shift register in response to the column decoded signal. A gate of the transistor Q57 receives the i-th column decoded signal CDi. The (i+l)-th shift register SRi+
has a similar circuit construction to that of the shift régister SRi. However, a transistor Q73 receives a second clock pulse P2 for driving shift registers. The D-type tranSistor Q50~ Q62~ Q70, and Q82 can be replaced with resistors.
The operation of the shift registers shown in Fig. 5 will be described with reference to Figs. 6a and 6b. Figures 6a and 6b are views of waveforms of the first and second clock pulses Pl and P2 for driving the shift registers. The clock pulses Pl and P2 differ in phase by 180.
In an initial condition, the reset pulse R is supplied to gates of transistors Qss and Q7s, resulting in voltage levels at nodes SPi and SLi in the register '~ SRi and SPi+l and SLi+l in the register SRi+l being at the low level, the flip-flops formed by the pairs of transistors Q51~ Q52; Q60~ Q61; Q71, Q72; and Q80, Q81 being reset, and thus pointer outputs POi and P0i+l, connected to gates of i-th and (i+l)-th serial gates SGi and SGi+l in the serial data gate group 23, being the low level. When a column decoded signal CDi of the high level is supplied to the gate of the transistor Q57 and the clock pulse TLK' is supplied to the gate of the transistor Q56~ the node SPi is charged up, rendering the flip-flop of the transistors Q60 and Q61 in the SET state and charging the node SLi up to the high level.
Due to the application of the first clock pulse Pl to the source of the transistor Q53, the flip-flop of the transistors Q51 and Q52 is set and thus the i-th ; ` ~
-' ~246741 pointer output POi of the high level is output. Due to the application of the pointer output POi of the high level to the i-th gate SGi, the content previously stored in the i-th flip-flop FFi in the flip-flop group 22 is transferred to the serial data bus 20, outputting the data on the serial data bus 20 to another port through the amplifier circuit 26 and the I/O circuit 27. Simultaneously, the i-th pointer output POi is supplied to a gate of the transistor Q78 parallel-connected to a series circuit of the transistors Q76 and Q77, in the adjoining shift register SRi+l, charging the nodes SPi+l and SLi+l up at the high level and rendering the flip-flop of the transistors Q80 and Q81 in the SET state. Due to the application of the second clock P2 to the transistor Q73, the flip-flop of the transistors Q71 and Q72 is set, outputting the (i+l)-th pointer output P0i+l of the high level to the (i~l)-th gate SGi+l. At this time, the (i+l)-th pointer command P0i+l is supplied to a gate of the transistor Qsg forming a reset gate of the flip-flop of the transistors Q60 and Q61. The flip-flop of the transistors Q60 and Q61 as well as the flip-flop of the translstors Q51 and Q52 in the preceding step of the shift register SRi are reset. As a result, the i-th pointer output POi is restored to the low level. This means that the logical "1" data stored in the shift register SRi is shifted to the following shift register , 25 SRi+l. In this case, the (i+l)-th data stored in the (i+l)-th flip-flop FFi+l i8 output to another port in the same way as described above. When the first clock Pl is supplied to the (i+2)-th shift register SRi+2 , the (i+2)-th pointer output P0i+2 of the high level is output and the (i+l)-th pointer output P0i+l becomes the low level. The above operation is continued for a desired number of times for serially outputting desired data.
Referring to Fig. 7, the circuit of the o-th flip-` 1246741 ~, flop FFo and the connection between the flip-flop FFo and the relevant circuits, i.e., the serial data gates SGAo and SGBo ~ the transfer gate TGo ~ the sense amplifier SAo I and the serial data buses SDB and SDs, are shown. The flip-flop FFo consists of MOS tran-sistors Q41 and Q42 and is connected to an active pull-up circuit 22a. In Fig. 4, the serial data bus (SDB) 20 is shown as a single data bus. In Fig. 7, however, complementary-type data buses SDB and SDB, which may increase the reliability of sensing data, are shown. Accordingly, a pair of serial data gates SGAo and SGs0 connecting the flip-flop FFo to the data buses SDB and SDB are provided. The complementary serial data buses SDB and SDB can naturally be applied to the circuit shown in Fig. 4.
As can be seen from the description with reference to Figs. 4 to 7, in spite of the deletion of the column decoder 25 shown in Fig. 1, the dynamic RAM device can effect both the random data access operation and high-speed serial data input and output operation. Due tothe deletion of the column decoder 25 and common use of the column decoder 5 for the random data access operation and the designation of the first location to the shift registers in the serial data input and output operation mode, there is achieved a dynamic RAM device with reduced circuit complexity, use of space, and power consumption.
The circuits of the shift registers and the flip-flops FF are simple. This may increase the above effects.
Figure 8 is a circuit diagram of another embodiment of a semiconductor memory device in accordance with the present invention. The semiconductor memory device is an open-bit line type dual port dynamic RAM device similar to that in Fig. 4. The dynamic RAM device in question, however, includes four data buses (DBl to DB4) 101 to 104, , , ~1 -- lZ~741 four amplifier circuits 71 to 74 , and a multiplexer 9 in a dynamic RAM portion lOOb. The dynamic RAM device also includes four serial data buses (SDBl to SD84) 20 to 204 , four amplifier circuits 261 to 264 , and a multiplexer 28 in a serial data I/O portion 200b. The addition of the data buses 101 to 104 and the serial data buses 201 to 204 greatly improves the access time of the dynamic RAM cell. The multiplexer 9 performs the multiplexing of data from and to the amplifier circuits 71 to 74 in a predetermined time interval during the random access mode. The multiplexer 28 performs the multiplexing of data from and to the amplifier circuits 261 to 264 in a predetermined time interval during the serial data input and output mode.
Due to the addition of the data buses, the circuit connection of first and second gate groups 3A and 4A is somewhat changed from that in Fig. 4. The connection of the serial data gate group 23 to the serial data buses 201 to 204 is also changed. Four gates, such as Go and Gl in the first gate group 3A and G2 and G3 in the second gate group 4A, may be triggered in a group by one column decoded signal, such as CDo. Similarly, four serial gates, such as SGo to SG3 in the serial data gate group 23, may be triggered in a group. Accordingly, a column decoder 5' does not require the column address signal of A6 ~ A6 and A7 , A7 , thus is simplified as shown in Fig. 9. A shift register group 24' has, accordingly, only 64 shift registers SRo to SR63.
The principle of the operation of the dynamic RAM
device shown in Fig. 8 is the same as that of the dynamic RAM device shown in Fig. 4, thus a description thereof is omitted.
Referring to Fig. 10, a circuit diagram of another example showing a part of a column decoder 5" corre-sponding to that in Fig. 9 and a predecoder circuit 50are shown. The predecoder circuit 50 includes an address drive clock circuit 51, tandem-connected gates 52 ~24674~
and 53 for shifting the level of a signal output from the circuit 51, a column decoder activating circuit 54 generating the column decoder activation signal CDA, and a 1/4 decoder 55. The 1~4 decoder 55 receives the column address signal A6 and A7 and the column decoder activation signal CDA and outputs column decoder selection signals CDSo to CDS3. In the column decoder 5", MOS transistors Q90 to Q95 the connection of which is represented by a general form, correspond to, for example, transistors Ql to Q6 shown in Fig~ 9.
In order to improve the operational reliability, a flip-flop circuit of MOS transistors Qls and Q16 and a capacitor C10 are provided. Another flip-flop circuit of MOS transistors Q35 and Q36 and a capacitor C30 are also provided. Other transistors Q14 ' Q17 ~ Q18 ~ and Ql9 correspond to the transistors Q12 Qlo ~ Qll ~ and Q13 shown in Fig. 9, respectively.
Referring to Fig. 11, a folded-bit line type dual port dynamic RAM device is shown. Each pair of bit lines, such as BLo and BLo, are folded at the sense amplifier SAo. This type of bit line arrangement may increase the resistance noise. The dynamic RAM device includes a dynamic ~A~
portion 100C and a serial data I/O portion 200C.
Referring to Fig~ 12, a part of the circuit shown in Fig. 11 is shown in detail, the circuit of Fig. 12 corresponds to that of Fig. 7. The transfer gate group 21' in Fig. 11 consists of 256 pairs of transfer gates, each pair of gates, such as TGAo and TGBo ~ being provided between the sense amplifier SAo and the flip-flop FFo and connected to the pair of bit lines BLo and BLo. A column decoder 5 activates either a gate group 3 connected between a sense amplifier group 2 and a data bus 10 in the dynamic RAM portion 100C or a shift register group 24 in the serial data input and output portion 200C, in response to the random access mode or the serial data input and output mode. Other ` 1~46741 circuit constructions and operations are similar to those of Fig. 4.
Referring to Fig. 13, another folded-bit type dual port dynamic RAM device is shown. The dynamic RAM
device includes four data buses 101 to 104 and four serial data buses 201 to 204, as shown in Fig. 8. Accordingly, the circuit construction and operation of Fig. 8 can be applied to the dynamic RAM device in Fig. 13 in the same way, except for the connection between the bit lines and the transfer gates, shown in Fig. 12.
Referring to Figs. 14a and 14b, the operation timing of the common column decoder 5' in Fig. 13 will be described.
In Figs. 14a and 14b, shaded portions represent operation times of the column decoder 5'. Figure 14a represents operation times for the random access in a dynamic RAM
portion lOOd. Each operation time for random access is Tl.
Figure 14b represents operation times for the serial data input and output. Each operation time of the column decoder for the serial data input and output is T2. The subsequent operation time T3, not the shaded portion, shows an operation ; for serial data input and output after once storing 256 data bits from the dynamic RAM cell portion 1' into 256 flip-flops FFo to FF255-The dynamic RAM cell portion 1' includes 64 Kbits of memory cells. Assuming the random access for four data bits (in parallel) requires 250 nanoseconds (ns), the above time Tl is 250 ns. Assuming also the time for selecting one pair of word lines WLi and WLi and transferring 256 data on the bit lines BLo, BLo to 8L2ss, BL2ss to the flip-flops FFo to FF2ss requires 250 ns, the time T2 is also 250 ns. Furthermore, assuming the time for serially outputting 256 data bits stored in the flip-flops to another port through amplifier circuits 261 to ; 264 , a multiplexer 28, and an I/O circuit 27 requires 40 ns x 256, i.e., 10.24 microseconds (~s), the time T3 .~
~246741 - l? -is 10.24 ~s. When random accesses are requested at thetimes tl and t2 ~ the column decoder 5' operates for the time Tl for each request. When a serial data input and output is requested at the time t3 , the column decoder 5' operates for the time T2 ~ equal to the time Tl. The subsequent serial data transfer in the serial data input and output portion 200d is effected over a considerably long time T3. Note that during the time T3 , the column decoder 5' is available for the random access mode operation. Even if use of the column decoder 5' overlapps at the time t3 , the random access operation may be delayed by the time ll.
On the contrary, the serial data input and output operation at the time t5 may be delayed by the time T 2.
However, these time delays T l and l2 are less than 250 ns in this example. Consequently, the actual decline in performance during the random access and/or the serial data input and output, even with overlapping of requests, is negligible.
If the multiplexers 9 and 28 are omitted and four input or output operations are effected in parallel, the above times Tl , T2 ~ and T3 are shortened.
Referring to Fig. 15, a circuit of two dynamic RAM
devices on a chip in accordance with the present invention, which is improved over the circuit of the dynamic RAM devices shown in Fig. 3, is shown. Each dynamic RAM device includes a dynamic RAM portion 100e, 100f and a serial data input and output portion 200e, 200f. In Fig. 15, a single column decoder 5 is provided for the two dynamic RAM devices, resulting in a great reduction in space used by the circuit.
In the above description, the circuit configurations and the operations of the embodiments were discussed.
In addition, consideration must be given to a circuit arrangemen~ minimizing the lines between the column decoder and the gate group(s) 3 (and 4) connected to the data bus 10, lines between the column decoder and the . ~ .
lZ46741 shift register group 24, lines between the sense amplifier group 2 and the transfer gate group 21, and other lines. Figure 16 is a part of a schematic lavout of an example concerning the circuit shown in Fig. 11.
The column decoder 5 is provided between the gate group 3 and the shift register group 24. The serial gate group 23 is provided adjacent to the flip-flop group 24. The many bit lines between the sense amplifier group 2 and the transfer gate group 21' and the lines between the transfer gate group 21' and the flip-flop group 22 should also be minimized in length.
Many widely different embodiments of the present invention may be constructed without departing from the spirit and scope of the present invention. It should be understood that the present invention is not limited to the specific embodiments described in this specification, except as defined in the appended claims.
Claims (19)
1. A semiconductor memory device comprising:
memory cell array means for storing data and including a plurality of memory cells arranged in a matrix with a plurality of bit lines and a plurality of word lines;
first decoder means, operatively connected to said memory cell array means, for selecting one of said word lines in response to an address signal;
first data bus means for carrying data;
a plurality of first gates, operatively connected between said bit lines and said first data bus means, for transferring data to be stored or read between said bit lines and said first data bus means;
serial data input and/or output means for serially inputting or outputting data, including:
a plurality of transfer gates, operatively connected to said bit lines and operable in a group in response to a transfer clock pulse;
a plurality of latch circuits operatively connected to said transfer gates and holding data to be stored or read;
serial data bus means for carrying data;
a plurality of serial gates, having terminals operatively connected to said latch circuits and operatively connected to said serial data bus means; and a plurality of shift registers, connected in cascade to form a ring counter, for triggering said serial gates; and second decoding means, operatively connected to said first gates, for triggering at least one of said first gates in response to another address signal in a random access operation mode and operatively connected to said shift registers loading decoded data of the column address signal in said shift registers in response to the column address signal in a serial data input and output operation mode;
said serial data input and/or output means operable independently from said memory cell array means, except during a time for operatively connecting said bit lines and said latch circuits through said transfer gates, for serially inputting data to or outputting data from said latch circuits through said serial data bus means by sequentially triggering said serial gates from one of the gates designated by said corresponding shift register.
memory cell array means for storing data and including a plurality of memory cells arranged in a matrix with a plurality of bit lines and a plurality of word lines;
first decoder means, operatively connected to said memory cell array means, for selecting one of said word lines in response to an address signal;
first data bus means for carrying data;
a plurality of first gates, operatively connected between said bit lines and said first data bus means, for transferring data to be stored or read between said bit lines and said first data bus means;
serial data input and/or output means for serially inputting or outputting data, including:
a plurality of transfer gates, operatively connected to said bit lines and operable in a group in response to a transfer clock pulse;
a plurality of latch circuits operatively connected to said transfer gates and holding data to be stored or read;
serial data bus means for carrying data;
a plurality of serial gates, having terminals operatively connected to said latch circuits and operatively connected to said serial data bus means; and a plurality of shift registers, connected in cascade to form a ring counter, for triggering said serial gates; and second decoding means, operatively connected to said first gates, for triggering at least one of said first gates in response to another address signal in a random access operation mode and operatively connected to said shift registers loading decoded data of the column address signal in said shift registers in response to the column address signal in a serial data input and output operation mode;
said serial data input and/or output means operable independently from said memory cell array means, except during a time for operatively connecting said bit lines and said latch circuits through said transfer gates, for serially inputting data to or outputting data from said latch circuits through said serial data bus means by sequentially triggering said serial gates from one of the gates designated by said corresponding shift register.
2. A semiconductor memory device according to claim 1, wherein said second decoding means is operated only during said time for operatively connecting said bit lines and said latch circuits in said serial data input and output operation mode.
3. A semiconductor memory device according to claim 2, wherein said first data bus means includes one or more first data buses, said serial data bus means includes one or more serial data buses, and the number of said first data bus means being equal to the number of said serial data buses.
4. A semiconductor memory device according to claim 3, wherein said second decoding means includes:
a predecoding circuit outputting a plurality of predecoded signals, defined by a part of said another address signal; and a plurality of decoders receiving said predecoded signals and including a plurality of decoding circuits, operatively connected to said first gates and said shift registers, defined by the remaining part of said another address signal.
a predecoding circuit outputting a plurality of predecoded signals, defined by a part of said another address signal; and a plurality of decoders receiving said predecoded signals and including a plurality of decoding circuits, operatively connected to said first gates and said shift registers, defined by the remaining part of said another address signal.
5. A semiconductor memory device according to claim 4, wherein said first gates are operatively connected between said bit lines and said first data bus means so that a plurality of said first gates, defined by said number of said first data buses, are triggered in a group by a signal from said decoding means, to transfer a plurality of data between said first data bus means and said bit lines.
6. A semiconductor memory device according to claim 5, wherein the number of said plurality of shift registers is equal to the number of said plurality of decoding circuits in each decoder, each shift register triggering a plurality of said serial gates, defined by said number of said serial data buses, in a group, and wherein said serial gates are operatively connected between said serial data bus means and said latch circuits so that a plurality of data are transferred in parallel between said serial data bus means and said latch circuits.
7. A semiconductor memory device according to claim 6, wherein each of said latch circuits includes a flip-flop.
8. A semiconductor memory device according to claim 6, wherein each of said shift registers is operated in response to the output from said decoding means when a pulse for designating the serial data input and output operation mode is applied to said shift registers.
9. A semiconductor memory device according to claim 8, wherein each of said shift registers is a two-phase ratio-type shift register, a phase clock for shifting one bit in one shift register to an adjacent shift register being applied to the one shift register and another phase clock, shifted approximately 180° in phase from said phase clock being applied to said adjacent shift register.
10. A semiconductor memory device according to claim 3, wherein each first data bus in said first data bus means includes a single bus line.
11. A semiconductor memory device according to claim 3, wherein each first data bus in said first data bus means includes a pair of complementary bus lines.
12. A semiconductor memory device according to claim 3, wherein each serial bus in said serial data bus means includes a single bus line.
13. A semiconductor memory device according to claim 3, wherein each serial bus in said serial data bus means includes a pair of complementary bus lines.
14. A semiconductor memory device according to claim 1, wherein said semiconductor memory device is formed on a chip and conducting lines between said decoding means and said plurality of gates and conducting lines between said decoding means and said shift registers are minimized in length in said semiconductor memory device chip.
15. A semiconductor memory device according to claim 14, wherein conducting lines between said bit lines and said transfer gates and conducting lines between said transfer gates and said latch circuits are minimized in length on said chip.
16. A semiconductor memory device according to claim 1, wherein said memory cell array means includes one or more memory cell arrays, said serial data input and/or input means includes one or more circuits for serially inputting and outputting data, and the number of said memory cell arrays being equal to the number of said serial input and output circuits.
17. A semiconductor memory device according to claim 16, wherein each memory cell array of said memory cell array means includes dynamic random-access memory (RAM) cells.
18. A semiconductor memory device according to claim 17, wherein said dynamic RAM cells are of an open-bit line form.
19. A semiconductor memory device according to claim 17, wherein said dynamic RAM cells are of a folded-bit line form.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60000313A JPS61160898A (en) | 1985-01-05 | 1985-01-05 | Semiconductor memory device |
| JP60-000313 | 1985-01-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1246741A true CA1246741A (en) | 1988-12-13 |
Family
ID=11470421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000498754A Expired CA1246741A (en) | 1985-01-05 | 1985-12-30 | Semiconductor memory device having serial data input and output circuit |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4769789A (en) |
| EP (1) | EP0188134B1 (en) |
| JP (1) | JPS61160898A (en) |
| KR (1) | KR900008935B1 (en) |
| CA (1) | CA1246741A (en) |
| DE (1) | DE3584241D1 (en) |
| IE (1) | IE57268B1 (en) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6142795A (en) * | 1984-08-03 | 1986-03-01 | Toshiba Corp | Row decoder system of semiconductor memory device |
| JPS6240698A (en) * | 1985-08-16 | 1987-02-21 | Fujitsu Ltd | Semiconductor memory device |
| JPS62146490A (en) * | 1985-12-20 | 1987-06-30 | Sanyo Electric Co Ltd | Semiconductor memory |
| US4800530A (en) * | 1986-08-19 | 1989-01-24 | Kabushiki Kasiha Toshiba | Semiconductor memory system with dynamic random access memory cells |
| US5280448A (en) * | 1987-11-18 | 1994-01-18 | Sony Corporation | Dynamic memory with group bit lines and associated bit line group selector |
| US4807198A (en) * | 1987-12-28 | 1989-02-21 | Motorola, Inc. | Memory input buffer with hysteresis and dc margin |
| JPH07107792B2 (en) * | 1988-01-19 | 1995-11-15 | 株式会社東芝 | Multiport memory |
| JP2591010B2 (en) * | 1988-01-29 | 1997-03-19 | 日本電気株式会社 | Serial access memory device |
| NL8802125A (en) * | 1988-08-29 | 1990-03-16 | Philips Nv | INTEGRATED MEMORY CIRCUIT WITH PARALLEL AND SERIAL INPUT AND OUTPUT. |
| EP0363031B1 (en) * | 1988-09-20 | 1994-11-17 | Fujitsu Limited | Serial input/output semiconductor memory |
| JPH0283899A (en) * | 1988-09-20 | 1990-03-23 | Fujitsu Ltd | Semiconductor memory |
| JP2993671B2 (en) * | 1989-01-07 | 1999-12-20 | 三菱電機株式会社 | Semiconductor storage device |
| KR100224054B1 (en) * | 1989-10-13 | 1999-10-15 | 윌리엄 비. 켐플러 | The circuit and its operating method for processing continuously video signal in synchronous vector processor |
| US4984214A (en) * | 1989-12-05 | 1991-01-08 | International Business Machines Corporation | Multiplexed serial register architecture for VRAM |
| JPH05182454A (en) * | 1991-06-25 | 1993-07-23 | Mitsubishi Electric Corp | Dual port memory device |
| US5355335A (en) * | 1991-06-25 | 1994-10-11 | Fujitsu Limited | Semiconductor memory device having a plurality of writing and reading ports for decreasing hardware amount |
| EP0541288B1 (en) * | 1991-11-05 | 1998-07-08 | Fu-Chieh Hsu | Circuit module redundacy architecture |
| DE69331061T2 (en) | 1992-08-10 | 2002-06-06 | Monolithic System Tech Inc | Fault-tolerant hierarchical bus system |
| US5535172A (en) * | 1995-02-28 | 1996-07-09 | Alliance Semiconductor Corporation | Dual-port random access memory having reduced architecture |
| US6167486A (en) | 1996-11-18 | 2000-12-26 | Nec Electronics, Inc. | Parallel access virtual channel memory system with cacheable channels |
| US6708254B2 (en) | 1999-11-10 | 2004-03-16 | Nec Electronics America, Inc. | Parallel access virtual channel memory system |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7713706A (en) * | 1977-12-12 | 1979-06-14 | Philips Nv | INFORMATION BUFFER MEMORY OF THE "FIRST-IN, FIRST-OUT" TYPE WITH A VARIABLE INPUT AND A VARIABLE OUTPUT. |
| US4498155A (en) * | 1979-11-23 | 1985-02-05 | Texas Instruments Incorporated | Semiconductor integrated circuit memory device with both serial and random access arrays |
| JPS5727477A (en) * | 1980-07-23 | 1982-02-13 | Nec Corp | Memory circuit |
| JPS57117168A (en) * | 1981-01-08 | 1982-07-21 | Nec Corp | Memory circuit |
| US4541075A (en) * | 1982-06-30 | 1985-09-10 | International Business Machines Corporation | Random access memory having a second input/output port |
| US4484308A (en) * | 1982-09-23 | 1984-11-20 | Motorola, Inc. | Serial data mode circuit for a memory |
| US4586167A (en) * | 1983-01-24 | 1986-04-29 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device |
-
1985
- 1985-01-05 JP JP60000313A patent/JPS61160898A/en active Pending
- 1985-12-30 CA CA000498754A patent/CA1246741A/en not_active Expired
- 1985-12-30 US US06/814,388 patent/US4769789A/en not_active Expired - Lifetime
- 1985-12-31 EP EP85309562A patent/EP0188134B1/en not_active Expired - Lifetime
- 1985-12-31 KR KR1019850010094A patent/KR900008935B1/en not_active IP Right Cessation
- 1985-12-31 DE DE8585309562T patent/DE3584241D1/en not_active Expired - Fee Related
-
1986
- 1986-01-03 IE IE17/86A patent/IE57268B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US4769789A (en) | 1988-09-06 |
| EP0188134B1 (en) | 1991-09-25 |
| EP0188134A2 (en) | 1986-07-23 |
| KR900008935B1 (en) | 1990-12-13 |
| EP0188134A3 (en) | 1988-08-10 |
| IE57268B1 (en) | 1992-07-01 |
| KR860006135A (en) | 1986-08-18 |
| DE3584241D1 (en) | 1991-10-31 |
| JPS61160898A (en) | 1986-07-21 |
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