CA1269791A - Curable composition and the use thereof - Google Patents

Curable composition and the use thereof

Info

Publication number
CA1269791A
CA1269791A CA000454404A CA454404A CA1269791A CA 1269791 A CA1269791 A CA 1269791A CA 000454404 A CA000454404 A CA 000454404A CA 454404 A CA454404 A CA 454404A CA 1269791 A CA1269791 A CA 1269791A
Authority
CA
Canada
Prior art keywords
composition according
polymerised
cations
arene
free radicals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CA000454404A
Other languages
French (fr)
Inventor
Kurt Meier
Giuliano Eugster
Franz Schwarzenbach
Hans Zweifel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ciba Geigy Investments Ltd
Original Assignee
Ciba Geigy AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ciba Geigy AG filed Critical Ciba Geigy AG
Application granted granted Critical
Publication of CA1269791A publication Critical patent/CA1269791A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F4/00Polymerisation catalysts
    • C08F4/40Redox systems
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F4/00Polymerisation catalysts
    • C08F4/42Metals; Metal hydrides; Metallo-organic compounds; Use thereof as catalyst precursors
    • C08F4/72Metals; Metal hydrides; Metallo-organic compounds; Use thereof as catalyst precursors selected from metals not provided for in group C08F4/44
    • C08F4/80Metals; Metal hydrides; Metallo-organic compounds; Use thereof as catalyst precursors selected from metals not provided for in group C08F4/44 selected from iron group metals or platinum group metals
    • C08F4/82Metals; Metal hydrides; Metallo-organic compounds; Use thereof as catalyst precursors selected from metals not provided for in group C08F4/44 selected from iron group metals or platinum group metals pi-Allyl complexes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur

Abstract

Curable composition and the use thereof Abstract Iron (II)-aromatic compound complexes mixed with electron acceptors as an oxidising agent are suitable initiators for the polymerised by irradiation of organic material which can be polymerised by cations and/or free radicals. The composition composed of the polymerisable material and of the initiator mixture is suitable for the production of protective coatings and can be used as a photographic recording material.

Description

7~

Case 6-1/~431/=

Curable composition and the use thereof The present invention relates to a curable composi-tion composed of a) a material which can be polymerised by cations and/or by free radicals, b) an iron(II~-aromatic com-pound complex and c) an oxidising agent, a process for poly-merising such material by the action of radiation, a mate-rial coated with the composition and the use thereof.
It is known from the literature that, for example, iodon;um, sulfonium and diazonium salts are suitable photo-initiators for the radiation-induced polymerisation of orga-nic material which can be polymerised by cations (see, for example~ German Auslegeschrift 2,518~639, J. Polym. Sci., Polymer Chemistry Ed., 17, 1059 t1979)~ Makromol. Chem., Suppl. 3, 348 (1979~ German Offenlegungsschriften 2,520,489,
2,854,011 and 3~021,376, U.S. Patent Specification 4,210,449 and British Patent Applicat;on 2,046,269A). Owing to their relatively low-wavelength absorption range (about 190 to 400 nm), these known photoinitiators require the use of sen-sitisers, such as coloured polycyclic hydrocarbons, for ex-ample perylene dyes, aromatic amines~ benzoin alkyl ethers or alkoxyacetophenones, in order to cure, by the ac~ion of light, systems which can be polymerised by cations. The curing by heat of systems containing such photo;nitiators is preferably carried out in the presence of reducing agents, such as copper, tin, iron or cobalt salts, thiophenols, as-corbic acid and the like.
Our own investigations have shown that metallocene complex salts are photoinit;ators for organic materials poly-merisable by cations, and do not require the concomitant use - ~ ~

~ 2 _ ~2~9'7~
o~ sens;tisers. These mater;als can be cured e;ther w;th-out further treatment at high temperatures or, after the act;on of rad;at;on, at temperatures h;gher than the tem-perature of irradiation. It would be more advantageous if the polymer;sation could be carr;ed out at even lower tem-peratures or merely by the act;on o~ irradiation and the heating due to the heat of polymerisation. It is also de-s;rable that it should be possible to polymerise organic materials ~hich can be polymerised simultaneously by cat-;ons or free radicals or by both mechanisms, by means o~ a photo;nitiator and under the action of radiat;on.
The object of the present invention ;s to prov;de a curable composition meeting these requirements.
The present invention relates to a curable composi-t;on contain;ng a) at least one material wh;ch can be poly-merised by free radicals or by cations, or at least one material which can be polymer;sed by free radicals and cat-ions, b) at least one iron compound of the formula I

[(R )(R2FeII) ]+a _ ~LQ ) q ~I), ;n ~hich a is 1 or 2 and q is 1, 2 or 3, L is a d;valent to heptavalent metal or non-metal, Q is a halogen atom, m is an integer corresponding to the sum of the valenc;es of L and q, R1 is a ~-arene and R2 is the anion of a1r-arene, and c~ at least one electron acceptor as an oxidising agent.
Su;table ~-arenes R1 are, ;n particular, aromatic groups having 6 to 24 carbon atoms or hetero-aromatic groups having 3 to 20 carbon atoms, it being possible for these groups to be unsubstituted or monosubstituted or polysubsti~
tuted by identical or different monovalent radicals, such as halogen atoms, preferably chlorine or bromine atoms, or C1-C8-alkyl, C2-C8-alkenyl, C2-C8-alkynyl, C1-C8 alkoxy, cyano, C1-C8-alkylthio, alkyl Cz-C6-monocarboxy-late, phenyl, c2-c5-alkanoyl or benzoyl groups. These ~-arene groups can be mononuclear sys~ems, condensed polynuc-lear systems or non-condensed polynuclear systems, it being X

...... .
-.: ,~' ~ ': . ' .
, ~.

12~979 poss;ble in the last-mentioned systems for the nuclei to be linked directly or via bridge members, such as -S- or -O-.
As the anion of a ~-arene, R2 can be an anion of a ~-arene of the type ment;oned above, for example the inde-nyl anion and, in particular, the cyclopentadienyl anion, it be;ng also poss;ble for these an;ons to be unsubst;tuted or monosubstituted or polysubstituted by identical or dif-ferent monovalent radicals, such as C1-C8-alkyl, C2-C8-alkenyl, C2-c8-alkynyl~ alkyl ~2-C6-monocarboxylate, cyano, c2-c5-alkanoyl or benzoyl groups.
The alkyl, alkoxy, alkylthio, alkyl monocarboxylate and alkanoyl substituents can be linear or branched. Typi~
cal alkyl, alkoxy, alkylthio, alkyl monocarboxylate or alka-noyl substituents which may be mentioned are methyl, ethyl, n-propyl, ;sopropyl, n-butyl, sec.-butyl, ter.t-butyl, n-pentyl, n-hexyl and n-octyl, methoxy, ethoxy, n-propoxy, isopropoxy, n-butoxy, n-hexyloxy and n-octyloxy, methylthio, ethylthio, n-propylthio, isopropylthio, n-butylthio, n-pen-tylthio and n-hexylthio, methyl, ethyl, n-propyl, isopropyl, n-butyl and n-pentyl carboxylate, and acetyl, propionyl, butyryl and valeroyl, respectively. In this respect, preference attaches to alkyl, alkoxy, alkylthio and alkyl monocarboxylate groups having 1 to 4, and especially 1 or 2, carbon atoms in the alkyl moieties, and to alkanoyl groups having 2 or 3 carbon atoms. Preferred substituted ~-arenes or anions of substituted ~-arenes are those containing one or two o-f the abovementioned substituents, in particular chlorine or bromine atoms or methyl, ethyl, methoxy, ethoxy, cyano, methyl or ethyl carboxylate and acetyl groups.
Suitable hetero-aromatic ~-arenes are systems con-taining S, N and/or O atoms. Hetero-aromatic ~-arenes con-taining S and/or O atoms are preferred~ Examples oi suit-able ~-arenes are benzene, toluene, xylenes, ethylbenzene, methoxybenzene, ethoxybenzene~ dimethoxybenzene, p-chloro-toluene, chlorobenzene, bromobenzene, dichlorobenzene, ace-tylbenzene, trimethylben2ene, trimethoxybenzene, naphtha-:' '' , ~,. ~"' ' .

37<3~

lene, 1,2-dihydronaphthalene, 1,2,3,4-tetrahydronaphthalene, methylnaphthalenes, methoxynaphthalenes, ethoxynaphthalenes, chloronaphthalenes, bromonaphthalenes, b;phenyl, indene, biphenylene, fluorene, phenanthrene, anthracene, 9,10-di-hydroanthracene, tr;phenylene, pyrene, naphthacene, coronene, th;ophene, chromene, xanthene, thioxanthene, ben20th;0phene, naphthoth;ophene, thianthrene, diphenylene oxide, d;phenyl-ene sulf;de, acr;dine and carbazole.
Examples of anions of substituted ~-arenes are the anions of methylcyclopentadiene, ethylcyclopentadiene, n-propylcyclopentadiene and n-butylcyclopentadiene and the anions of d;methylcyclopentad;ene, methyl and ethyl cyclo-pentadiene-carboxylate and acetylcyclopentadiene, prop;onyl-cyclopentad;ene, cyanocyclopentadiene and benzoylcyclopenta-diene Preferred anions are the an;on of unsubstituted in-dene and especially of unsubstituted cyclopentadiene.
Preferably, a has a value of 1 and R1 ;s benzene, toluene, xylene, methoxybenzene, chlorobenzene, p-chloroto-luene, naphthalene, methylnaphthalene, chloronaphthalene, methoxynaphthalene, biphenyl, indene, pyrene, perylene or diphenylene sulfide and R2 is the anion of cyclopentadiene, acetylcyclopentad;ene, methylcyclopentad;ene, phenylcyclo-pentadiene or indene.
Complexes of the formula I wh;ch are part;cularly preferred are those in which a is 1, R1 is ~6-pyrene or -naphthalene and R2 ;s the an;on of ~5-cyclopentad;ene.
Examples of su;table metals or non-metals L are Sb, Fe, Sn, Bi, Al, Ga, In, Ti, Zr, Sc, V, Cr, Mn and Cu; lan-thanides, such as Ce, Pr and Nd, or act;n;des, such as Th, Pa, U or Np. Suitable non-metals are, in particular, B, P
and As. L is preferably P, As, B or Sb, P be;ng particu-larly preferred. As the halogen atom, Q is preferably Cl and especially F.
Examples of complex an;ons [LQm] q are BF4 , PF6 , AsF6 , SbF6 , FeCl4 , SnCl62 , SbCl6 and BiCl6 . The particularly preferred complex an;ons are SbF6 , sF4 , AsF6 and PF~ .

::

. .

~. , .

The compounds of the formula I are known or can be prepared by analogous processes.
The electron acceptors used as an oxidising agent are preferably an organic hydroperoxide, an organic per-acid or a qu;none.
The following are examples: tertiary butyl hydroper-oxide, cumene hydroperoxide, triphenylmethyl hydroperoxide, tetralin hydroperoxide, ~-methyltetralin hydroperoxide, de-calin hydroperoxide, perbenzoic acid, m-chloroperbenzoic acid or benzoquinone.
Examples of organic materials which can be polymer-ised by cations and are suitable for the curable composi-tions according to the invention are those of the following types, it being possible to use these on their own or as mixtures of at least two components:
I. Ethylenically unsaturated compounds which can be polymerised by a cationic mechanism. These include 1. mono-olefins and diolefins, for example isobutylene, butadiene, isoprene, styrene, ~-methylstyrene, divinylbenzenes, N-vinylpyrrolidone, N-vinylcarbazole and acroleine~ 2~ Vinyl ethers, for example methyl vinyl ether, isobutyl vinyl ether, trimethylolpropane trivinyl ether and ethylene glycol di-vinyl ether; and cyclic vinyl ethers, for example 3,4-di-hydro-2-formyl-2H-pyrane tdimeric acroleine) and the 3,4-dihydro-2H-pyran-2-carboxylic acid ester of 2-hydroxymethyl-
3,4-dihydro-2H-pyran. 3. Vinyl esters, for example vinyl acetate and vinyl stearate.
II. Heterocyclic compounds which can by polymerised by cations, for example ethylene oxide, propylene oxide, epichlorohydrin and glycidyl ethers of monohydric alcohols or phenols, for example n-butyl glycidyl ether, n~octyl gly-cidyl ether, phenyl glycidyl ether and cresyl glyc;dyl ether; glycidyl acrylate, glycidyl methacrylate, styrene oxide and cyclohexene oxide; oxetans~ such as 3,3~dimethyl-oxetane and 3,3-di-(chloromethyl)-oxetane; tetrahydrofuran;
dioxolane, trioxane and 1,3,6-trioxacyclooctane; lactones, such as ~-propiolactone, ~-valerolactone and -caProlactone;

:"' ;. "
.. . ..

979~

th;;ranes, such as ethylene sulf;de and propylene sulfide;
azet;d;nes, such as N-acylazet;d;nes, for example N-benzoyl-azet;d;ner and the adducts of a~e-t;dine with d;isocyanates, for example toluylene~2,4-d;isocyanate and toluylene-2,6-d;;socyanate and 4,4'-d;am;nod;phenylmethane d;;socyanate;
epoxy res;ns; and l;near and branched polymers hav;ng gly-c;dyl groups ;n the s;de cha;ns, for example homopolymers and copolymers of polyacrylate and polymethacrylate glyc;-dyl esters.
Part;cularly important representatives of these polymer;sable compounds mentioned above are the epox;de re-s;ns and, ;n part;cular, the d;epoxides and polyepoxides and epox;de resin prepolymers of the type used for the prepara-t;on of crossl;nked epoxy res;ns. The d;epoxides and poly-epox;des can be al;phat;c, cycloal;phatic or aromat;c com-pounds. Examples of such compounds are the glycidyl ethers and ~-methyl glycidyl ethers of aliphatic or cyGloaliphat;c d;ols or polyols, for example those of ethylene glycol, pro-pane-1,2-d;ol, propane-1,3-d;ol, butane 1,4-diol, d;ethyl-ene glycol, polyethylene glycol, polypropylene glycol, gly-cerol, tr;methylolpropane or 1,4-d;methylolcyclohexane or those of 2,2-bis-(4-hydroxycyclohexyl)-propane and N,N-bis-(2-hydroxyethyl)-an;l;ne; and the glycidyl ethers of d;phe-nols and polyphenols, for example resorcinol, 4,4'-d;hydroxy-d;phenylmethane, 4,4'-d;hydroxyd;phenyl-2,2-propane, novo-laks and 1,1,2,2-tetrakis-~4-hydroxyphenyl)-ethane. Further examples are N-glycidyl compounds, for example the d;glyc;-dyl compounds of ethyleneurea, 1,3-propyleneurea or 5-d;-methylhydanto;n or of 4,4'-methylene-5,5'-tetramethyld;hy-dantoin or compounds such as tr;glycidyl isocyanurate.
Further glycidyl compounds of industrial importance are the glycidyl esters of carboxylic acids, in particular dicarboxylic and polycarboxylic acids. Examples of these are the glycidyl esters of succinic acid, adipic acid, aze-laic acid, sebacic acid, phthal;c acid, terephthalic acid, tetrahydrophthalic acid, hexahydrophthalic acid~ isophthalic acid or trimellitic acid or of dimer;sed fatty acids.

-: . ~`: ', '' ' .: .
.

. .
.~ ~ ,, .

Examples of polyepox;des other than glyc;dyl com-pounds are the diepoxides of vinylcyclohexene and clicyclo-pentadiene, 3-(3l,4'-epoxycyclohexyl)-8,9-epoxy-Z,4~d;oxa-sp;roCS.S]undecane and of 3',4'-epoxycyclohexylmethyl 3,~-epoxycyclohexanecarboxylate, butad;ene d;epox;de or lso-prene d;epox;de, epoxid;sed l;noleic acid derivat;ves or epoxidised polybutad;ene.
Preferred epoxide resins are diglyctdyl ethers, which may be so-called advanced, of dihydric phenols or di-hydric aliphatic alcohols having 2 to 4 carbon atoms. The diglycidyl ethers, which may be so-called advanced, of 2,2-bis-(4-hydroxyphenyl)-propane and of bis-~4-hydroxyphenyl)-methane are particularly preferred.
Further su;table compounds which can be polymerised by cations are the following: III. Methylol compounds:
1. AminopLasts, such as the N-hydroxymethyl, N-methoxymethyl, N-n-butoxymethyl and N-acetoxymethyl derivatives of amides or amide-like compounds, for example cyclic ureas, such as ethyleneurea (imidazolidin-2-one), hydantoin, urone (tetra-hydrooxadiaz;n~4-one), 1,2-propyleneurea (4-methylim;dazol;~
din-2-one), 1,3-propyleneurea (hexahydro-2H-pyrimid-2-one), hydroxypropyleneurea (5-hydroxyhexahydro-2H-pyrimid-2-one), 1,3,5-melamine and further polytriazines, such as acetogu-anam;ne, benzoguanam;ne and adipoguanam;ne.
If des;red it is possible to employ aminoplasts con-ta;ning both N-hydroxymethyl and N-alkoxymethyl groups or both N-hydroxymethyl and N-acetoxymethyl groups (for example a hexamethylolmelamine in wh;ch 1 to 3 of the hydroxyl groups are etherified with methyl groups).
Preferred aminoplasts are the condensation products of urea, urone, hydantoin or melamine with formaldehyde and also partially or completely etherified products of such condensation products with an aliphatic, monohydric alcohol having 1 to 4 carbon atoms.
2, Phenoplasts. Preferred phenoplasts are resols prepared from a phenol and an aldehyde. Suitable phenols include phenol itself, resorcinol, 2,2 bis-(p-hydroxyphenyl)-pro-': "":' :`
,~
. . :

. ,, .; .
:
,.~ .

379~

pane, p-chlorophenol, a phenol which is substituted by one or two alkyl groups each of which has 1 ~o 9 carbon atoms, such as o-, m- and p-cresol, the xylenols, p-tert.-butyl-phenol and p-nonylphenol and also phenyl-substituted phe-nols, in particular p-phenylphenol. The aldehyde which is condensed with the phenol is preferably formaldehyde, but other aldehydes, such as acetaldehyde and furfural, are also suitable. If desired, a mixture of such curable phenol/
aldehyde resins can be used~
The preferred resols are condensation products of phenol, p-chlorophenol, resorcinol or o-, m- or p-cresol with formaldehyde.
Suitable organic materials which can be polymerised by free radicals are, in particular, monoethylenically or polyethylenically unsaturated compounds. The follow7ng are examples: styrene, vinylpyr;dine, v;nyl acetate, divinylben-zene, vinyl ethers, acrylamide~ methacrylamide9 bisacryl-amide, bismethacrylamide and unsaturated polyesters, parti-cularly those based on male;c acid. Preferred materials are the esters or amides of acrylic acid and/or methacrylic acid with linear or branched alcohols, polyols or monoamines or polyamines, respectively. The polyols and polyamines can also be in the form of partial esters.
Examples of polyamines are ethylenediamine, propyl-enediamine, butylenediamine, hexylenediamine, phenylenedi-amine, benzylened;am-7ne, naphthylenediamine, d;ethylenetri-amine, triethylenetetramine and diaminoethyl ethers~ Examples of polyols are l;near and branched alkylenediols, such as ethylenediol, propylenediol, butylenediol, pentylenediol, hexylenediol, octylenediol, polyoxaalkylenediols, such as diethylene and triethylene glycol and polyethylene glycols having a molecular weight of ZOO to 500, 1,4-dihydroxycyclo-hexane, 1,4-di-(hydroxymethyl)-cyclohexane, d;hydroxyben-zenes, hydroxymethylphenols, triols, such as 1,2,3-trihy-droxypropane, 1,2,~-trihydroxybutane and trimethylolpropane, pentaerythritol, dipentaerythritol and low-molecular poly-esters contain;ng hydroxyl end groups.

: .... ..
. . :

': .~

7~3~
_ 9 _ Examples of suitable alcohols and monoamines are methanol, ethanol, propanol, butanol~ pentanol, hexanol, heptanol, octanol, 2-ethylhexanol, cyclohexanol, phenol, glyc;dyl, methylam;ne, d;methylam;ne and ethylam;ne.
Examples of organ;c materials wh;ch can be polymer-ised by cations and free radicals are m;xtures of the above-ment;oned mater;als wh;ch can be polymer;sed by cat;ons and free rad;cals, respect;vely. M;xtures conta;n;ng epox;de res;ns are preferred. Part;al esters of epox;de res;ns and acryl;c ac;d, methacryl;c ac;d or a m;xture of these ac;ds are also su;table~
The ;ron compound b) and the ox;d;s;ng agent c) can be present ;n the compos;t;on ;n an amount of 0.1 to 15, preferably 0.5 to 10, % by we;ght, relat;ve to the polymer-;sable organic mater;al~ The rat;o by we;ght of the ;ron compound b) to the ox;d;s;ng agent c) can be between 1:10 and 5:1, preferably between 1:5 and 1:1.
The curable compos;t;ons accord;ng to the ;nvent;on can be obta;ned, for example, ;n the -form of homogeneous l;quid m;xtures or ;n a homogeneous or ;nhomogeneous glass-l;ke form. Homogeneous, glass-l;ke products can be obtained ;n a manner known per se~ for example by l;quefy;ng sol;d, polymer;sable organ;c mater;als, ;f appropr;ate by add;ng suitable solvents, ;n the dark or under red l;ght, heat;ng to temperatures above the;r glass trans;tion po;nt, add;ng the components b) and c) and cooling the result;ng mixtures.
If des;red, the glass-l;ke product thus obtained can subse-quently be comm;nuted. Inhomogeneous, glass-l;ke products can be obta;ned, for example, by m;x;ng glass-l;ke, polymer-;sable materials ;n the form of powder with the components b) and c).
The composit;ons accord;ng to the ;nvention are stable, and thus storable, at room temperature and ;n rela-t;ve darkness, for example ;n red l;ght. They can be cured by heat w;thout further treatment, preferably at tempera-tures near to the melting point or decomposition point of the components b) and c).

: ., , 379~

An essential advantage of the composit;on according to the ;nvent;on ;s that ;t can be cured by -the ac-t;on o-f rad;at;on~ complete cur;ng generally be;ng effected by the heat formed ;n the react;on, and external heat;n~ be;ng un-necessary. However, ;t can somet;mes be preferable to apply external heat;ng after exposure to l;ght, for example ;f fa;rly short reaction t;mes are des;red.
The present invention also relates, therefore, to a process for the polymer;sat;on of an organ;c material which can be polymerised by free radicals or cations, a mixture of these mater;als or a mater;al wh;ch can be polymer;sed by free rad;cals and cations, under the action of rad;ation, in the presence of a photoinitiator and, ;f appropr;ate, by heat, wherein the photoinit;ator ;s a mixture of a) at least one iron compound of the formula I

[ (R ) (R Fe ) a] q (LQm) q ( I ~

in wh;ch a is 1 or 2 and q ;s 1, Z or 3, L ;s a divalent to heptavalent metal or non-metal, Q ;s a halogen atom, m ;s an ;nteger correspond;ng to the sum of the valenc;es of L and q, R1 ;s a ~ -arene and R2 ;s the an;on of a ~l-arene, and b) at least one electron acceptor as an ox;d;s;ng agent, and where;n, ;f des;red, the polymer;sat;on react;on ;s subsequently completed by apply;ng heat~
The ;rrad;at;on of the curable m;xture is preferably effected by means of electron beams or actin;c l;ght, pre-ferably of a wavelength between 200 and 600 nm and an ;nten-s;ty between 150 and 5000 watts. Examples of su;table l;ght sources are xenon lamps, argon lamps, tungsten lamps, car-bon arcs and metal hal;de and metal arc lamps, such as low-pressure, med;um-pressure and h;gh-pressure mercury lamps~
The ;rrad;at;on ;s preferably carr;ed out w;th metal hal;de lamps or h;gh-pressure mercury lamps. The ;rrad;at;on t;me depends on var;ous factors, ;ncluding, for example, the polymerisable organic material, the nature of the light source and the distance of the latter from the irradiated .. ..
'' ' - ~ ~ -~, ~

~L2~9t79~

mater;al~ The irrad;ation t;me is preferably 10 to 60 sec-onds.
The composit;ons which have been exposed to light can be heated in conventional convection ovens. If short heat;ng or react;on t;mes are necessary, the heating can also be effected by exposure to~ for example, IR rad;at;on, IR lasers or m;crowave dev;ces~ The polymer;sat;on tempera-tures are in the range from room temperature to about 80~.
The compos;tions accord;ng to the invention can also conta;n further add;t;ves which are known and are custom-ar;ly employed ;n the art of photopolymer;sable mater;als.
Examples of such add;t;ves are p;gments, dyes, f;llers and re;nforcing agents, glass fibres and other f;bres~ flame-retard;ng substances, ant;static agents, flow control agents, ant;ox;dants and l;ght stab;l;sers, and also conventional photo;n;tiators, such as acetophenones, acylphosph;ne oxides or aromat;c ketones5 In order to improve the final proper-ties of epoxide resins ;t is possible to incorporate poly-funct;onal hydroxy compounds, for example as described in German Offenlegungsschr;ft 2,639,395.
In order to ;ncrease the;r capacity to be stored ;n the dark, the curable compos;t;ons can conta;n weak organ;c bases, such as n;tr;les, am;des, lactones or urea der;va-t;ves. In order to prevent premature react;on caused by unintentional e~xposure, small amounts of UV absorbers and/or organ;c dyes can be added.
The compos;t;on accord;ng to the ;nvent;on can be appl;ed by customary methods to at least one surface of a substrate. The coated material ;s also a subject of the invent;on. Examples of su;table substrates are metals and metallo;ds, such as steel, alum;n;um, copper, cadm;um~ z;nc and s;l;con, and also ceram;cs, glass, plast;cs, paper and wood. The coated mater;al can be used for the product;on of protect;ve layers and pass;vating layers by exposure, wh;ch ;s a further subject of the ;nvent;onO
If only part of the coating is irradiated through a photomask during exposure, the unexposed areas can subse-~ _.

'; ' ~:

~i9~7~
- lZ -quently be removed by means of a suitable solvent. The coated mater;al ;s thus also su;table for use as a photo-graph;c record;ng mater;al, for the production of pr;nting plates and, espec;ally, pr;nted c;rcu;ts, an~ also as a solder resist. Use as a photographic recording material is also a subiect of the present invention~
The compos;tions accord;ng to the invent;on can also be used as adhes;ves or for the product;on of putt;es, f;l-~ers or f;bre-re;nforced compos;te materials and lam;nated substances.
The compos;t;ons accord;ng to the ;nvention have a h;gh sensitivity to light without further sensitisation, which also means short exposure times for curing~ At the same time, initiators which are effective for cat;on;c and free radical polymerisation are produced during exposure, which w;dens the field of application in respect of polymer~
isable materials. It is surprising in this respect that the oxid;s;ng agent only becomes effect;ve after exposure and enables cur;ng to be carried out by irradiat;on. It is very advantageous that curing is generalLy effected by the action of radiation without the applicat;on of external heat.
The following examples illustrate the invention in greater detail.
Examples 1 - 11: 2.5 mg of a solution containing 50/u mole of a compound of the formula I and 250 ~u mole of oxidising agent per g of epoxide resin is irradiated ;n an aluminium crucible at 0C using a 1000-watt high-pressure mercury lamp. The closed cruc;ble ;s transferred to a differential scanning calorimeter ~DSC-30, Mettler) and heated at a heat-up rate of 20C/m;nute. In the course of th;s the follow-ing parameters are determined: the start of the exothermic react;on (TStart)~ the react;on enthalpy liberated (~E) and the~temperature at max;mum reaction enthalpy (Tm The following epoxide resins are employed:
1) A technical bisphenol A d;glyc;dyl ether having an epox-ide content of 5.2 equ;valents/kg.
2) A technical cycloaLiphatic epoxide of the formula .:

3l2$~379~

- ~3 -/~0\ /~\

3) A glyc;dylised cresol-novolak hav;ng an epoxide content of 4.8 equivalents/kg.
The const;tuents and the results are listed in the follow;ng table. It w;ll be seen that the polymerisation starts ;n the region of room temperature and proceeds to complet;on at low temperatures, only slightly above the starting temperature.

:',: ':
:, ''~, ..:::
' ~ ' '; ' " , , :~-2~9t~

_ __ ~
~:n ro ~ ~ N
~ o~
N ' t~l N ~1 N
~1 ~--O
X
`O ~ ~ I~ 00 00 O`
e ~ U~ ~ ~ ~ r E ~ . . .
Q O
X
~ O O O ~ O O
t~ ~ ~ N r~
c~ ~) - ~
o GJ
~ l - o o o o o o o o aJ o o o o o o o XQ ~ ~ ~ ~ M 00 00 CO
Ll~ ~
~ ~
X
O ~n D J - ~ _ _ E (~ a.
_ r ~ O ~
O Q a~ E C
-- O -- O _ ~
r ::~ D :~ ~ ~, ' ~J~ Q ~ O ~ ~
~,GJ ~0~,~IJ o~,~J cO ~J O
~J ~ o~ ~ ~ a~ ~ oo 'D O
OJ ~ J C ~ J ~ ~ J ~ J
~ c ~ a~ Q Q Q
~1~ ~ ~ O ~ , _ , ' Q X E EX Ex Q ' Q '-~ Q '-~ LLILLI W
OI I HI I t~ I I t~ .,C .,C

O `O U~ _ `O U~ -- `O U~ -- ~0~--C_~ -- -- I.L -- -- LL V _ . .__ o o oo L ~ c ~ ~ C C _ aJ ~, o ., L ~ 'D L .~ ~ ~ ~ L o , ,C
.,. a~ ~ cll ~ Q 0 C'-- X '' J X'~ J X ~-- X C O ~1) J O O
~ ~~ ~ O ~ >~ O~ :~ O ~ :~ O ~) _ ~ ~ N N
'' a~'-- +' 'L aJL ~ aJ' ~ ~ E -O ~ cl c a, D Q IJ D Q ~ D Q ~ n Q ') ~ O E D Q
. _.. __. . . ... _ aJ
x E ~ ~J ~ ~ 11~ ~0 1' LLI ~0 _ ._ , .. .. _ _ . ___ .__ ...
. , ~, .. : , , ,, ~:
,:,: , '-; .. , .-.. ,. . : .

~`97~

_ ~

v ~ ~ ~" N
d o~
~ E O
E ~

X L
~ ~ O O ~ ~0 _ ,~
O
~ O O O
~ ~_ O O O O
X ~ ~~ ~
111 ~
Ao _ ____ .. _. __ ~
., '~ C
X ~r- ~ N
~il O (I) Q aJ
~, __ _._ O H

v E ~ r L
D O Q ~ O
l_ ~ A J O O J
Q~ C ~ Q t~ 1~
~ ~ o I C:
_ _O C ~ ~H
Q QL a) a A H
~ E EO Q x ~ v E c cQ ~ H Q ~. Q
t~ ~V) g--V~ ~

., V L ~ ~ N L ~ ~ L ~ ~
C L L,L ~, L ~ L ~ L
~ ~ ~ Q Q a~ ~ n Q ~ ~ Q
: .. - .__ x E oO O~ O
uJ ~ ~ ~
-.

79~

Example 12: A solution of 2 ~ of a techn;cal b;sphenol A
diglycidyl ether (epoxide content: 5.2 equ;valentstkg), 0.1 mmol of ~6-naphthalene)-(~5-cyclopentadienyl)-irontII) hexafluorophosphate and O.S mmol of cumene hydro-peroxide ;s appl;ed to a copper-backed epox;de pl.ate by means of a 25 ~u doctor blade. A tack-free, acetone-resistant film is obtained after 30 seconds exposure ~distance approx. 50 cm) to a 5000-watt metal hal;de lamp.
Example 130 Example 12 is repeated using tert;ary butyl hydro-peroxide instead of cumene hydroperoxide. The same resu lt is obtained.
Example 14: A solution of 2 9 of a mixture of 48 parts of polyester acrylate, 32 parts of butanediol diacrylate and 20 parts of dicyclopentadienyl hydroxyethyl acrylate, 0.1 mmol of ~6-2-propylbenzene~ 5-cyclopentadienyl)-iron(II) hexafluorophosphate and 0.5 mmol of tert;ary butyl hydroperox;de ;s appl;ed to a sheet of glass by means of a 50 ,u doctor blade. A tack-free f;lm is obta;ned after ;rradiation (30 seconds, distance approx. 50 cm) using a 1000-watt halogen lamp.

,, .. . ~:.. . - ., ::

Claims (16)

WHAT IS CLAIMED IS:
1. A curable composition containing a) at least one material which can be polymerised by free radicals or by cations, or at least one material which can be polymerised by free radicals and cations, b) at least one iron compound of the formula I
[(R1)(R2FeII)a]+a ? (LQm)-q (I) in which a is 1 or 2 and q is 1, 2 or 3, L is a divalent to heptavalent metal or non-metal, Q is a halogen atom, m is an integer corresponding to the sum of the valencies of L and q, R is a .pi.-arene and R2 is the anion of a .pi.-arene, and c) at least one electron acceptor as an oxidising agent.
2. A composition according to claim 1, wherein R1 is an aromatic group having 6 to 24 carbon atoms or a hetero-aromatic group having 3 to 20 carbon atoms, these groups being unsubstituted or monosubstituted or polysubstituted by identical or different halogen atoms or C1-8-alkyl, C2-C8-alkenyl, C2-C8-alkynyl, C1-8-alkoxy, cyano, C1-8-alkylthio C2-6-monocarboxylic acid ester, phenyl, C2-5-alkanoyl or benzoyl groups.
3. A composition according to claim 1, wherein R is .pi.-arene having 6 to 24 carbon atoms or of a hetero-aromatic .pi.-arene having 3 to 20 carbon atoms, each of these being un-substituted or monosubstituted or polysubstituted by identi-cal or different C1-8-alkyl, C2-8-alkenyl, C2-C8-alkynyl, C2-6-monocarboxylic acid ester, cyano, C2-5-alkanoyl or benzoyl groups.
4. A composition according to claim 1, wherein a is 1 and R is benzene, toluene, xylene, methoxybenzene, chloro-benzene, p-chlorotoluene, cumene, naphthalene, methylnaph-thalene, chloronaphthalene, methoxynaphthalene, biphenyl indene, pyrene, perylene or diphenylene sulfide and R2 is the anion of cyclopentadiene, acetylcyclopentadiene, methyl-cyclopentadiene, phenylcyclopentadiene or indene.
5. A composition according to claim 1, wherein a is 1, R1 is ?6-pyrene or ?6-naphthalene and R2 is the anion of ?5 -cyclopentadiene.
6. A composition according to claim 1, wherein [LQm]-q is SbF6-, Bf4-, AsF6- or PF6-.
7. A composition according to claim 1, wherein the oxid-ising agent is an organic hydroperoxide, an organic per-acid or a quinone.
8. A composition according to claim 7, wherein the oxid-ising agent is tertiary butyl hydroperoxide, cumene hydro-peroxide, triphenylmethyl hydroperoxide, tetralin hydroper-oxide, .alpha.-methyltetralin hydroperoxide, decalin hydroperoxide, perbenzoic acid, m-chloroperbenzoic acid or benzoquinone.
9. A composition according to claim 1, wherein the or-ganic material which can be polymerised by cations is an epoxide resin.
10. A composition according to claim 1, wherein the mate-rial which can be polymerised by free radicals is a mono-ethylenically or polyethylenically unsaturated compound.
11. A composition according to claim 1, wherein the mate-rial which can be polymerised by cations and free radicals is a mixture of an epoxide resin and a monoethylenically or polyethylenically unsaturated compound or a partial ester of an epoxide resin and acrylic acid, methacrylic acid or a mixture of these acids.
12. A composition according to claim 1, which contains the iron compound b) and the oxidising agent c) in an amount of 0.1 to 15% by weight, relative to the polymerisable orga-nic material.
13. A composition according to claim 12, wherein the ratio by weight of the iron compound b) to the oxidising agent c) is between 1:10 and 5:1.
14. A process for the polymerisation of at least one mate-rial which can be polymerised by free radicals or by cations, or of at least one material which can be polymerised by free radicals and cations, by the action of radiation in the pre-sence of a photinitiator and, if appropriate, by heating, wherein the photoinitiator is a mixture of a) at least one iron compound of the formula I

[(R1)(R2FeII)a]+a ?(LQm)-q (I) in which a is 1 or 2 and q is 1, 2 or 3, L is a divalent to heptavalent metal or non-metal, Q is a halogen atom, m is an integer corresponding to the sum of the valencies of L and q, R1 is a .pi.-arene and R2 is the anion of a .pi.-arene, and b) at least one electron acceptor as the oxidising agent and, if desired, polymerisation is completed subsequently by the application of heat.
15. A coated material wherein a layer of the composition according to claim 1 has been applied to a substrate.
16. A process for the production of photographic relief images, which comprises irradiating a material according to claim 15 through a photomask, if appropriate while heating, and then removing the unexposed portions with a developer.
CA000454404A 1983-05-18 1984-05-16 Curable composition and the use thereof Expired - Lifetime CA1269791A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH2691/83-1 1983-05-18
CH269183 1983-05-18

Publications (1)

Publication Number Publication Date
CA1269791A true CA1269791A (en) 1990-05-29

Family

ID=4239405

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000454404A Expired - Lifetime CA1269791A (en) 1983-05-18 1984-05-16 Curable composition and the use thereof

Country Status (11)

Country Link
US (1) US5073476A (en)
EP (1) EP0126712B1 (en)
JP (1) JPH0639483B2 (en)
KR (1) KR920005529B1 (en)
AT (1) ATE24243T1 (en)
AU (1) AU573219B2 (en)
BR (1) BR8402336A (en)
CA (1) CA1269791A (en)
DE (1) DE3461677D1 (en)
ES (1) ES532965A0 (en)
ZA (1) ZA843733B (en)

Families Citing this family (239)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0094915B1 (en) * 1982-05-19 1987-01-21 Ciba-Geigy Ag Curable compositions containing metallocen complexes, activated primers obtained therefrom and their use
EP0152377B1 (en) * 1984-02-10 1987-12-09 Ciba-Geigy Ag Curable compositions and their use
US4786569A (en) * 1985-09-04 1988-11-22 Ciba-Geigy Corporation Adhesively bonded photostructurable polyimide film
AU8155887A (en) * 1986-10-14 1988-05-06 Loctite Corporation Visible light curable free radical compositions containing pi-arene metal complexes
DE3879278D1 (en) * 1987-06-05 1993-04-22 Ciba-Geigy Ag, Basel, Ch
US5147900A (en) * 1987-08-28 1992-09-15 Minnesosta Mining And Manufacturing Company Energy-induced dual curable compositions
US4950696A (en) * 1987-08-28 1990-08-21 Minnesota Mining And Manufacturing Company Energy-induced dual curable compositions
DE3880642T2 (en) * 1987-12-08 1993-11-18 Mitsui Petrochemical Ind Composition, curable with active rays, and medium for optical registration with this hardened composition.
US4920182A (en) * 1987-12-18 1990-04-24 Ciba-Geigy Corporation Epoxy resin compositions containing polyester flexibilizer and metallocene complex initiator
CA1340758C (en) * 1988-06-01 1999-09-21 Robert J. Devoe Energy curable compositions: single component curing agents
US4985340A (en) * 1988-06-01 1991-01-15 Minnesota Mining And Manufacturing Company Energy curable compositions: two component curing agents
DE3832032A1 (en) * 1988-09-21 1990-03-22 Hoechst Ag PHOTOPOLYMERIZABLE MIXTURE AND RECORDING MATERIAL MANUFACTURED THEREOF
US4954414A (en) * 1988-11-08 1990-09-04 The Mead Corporation Photosensitive composition containing a transition metal coordination complex cation and a borate anion and photosensitive materials employing the same
DE69029104T2 (en) 1989-07-12 1997-03-20 Fuji Photo Film Co Ltd Polysiloxanes and positive working resist
JP2775880B2 (en) * 1989-08-21 1998-07-16 ブラザー工業株式会社 Transfer recording medium
CA2048232A1 (en) * 1990-09-05 1992-03-06 Jerry W. Williams Energy curable pressure-sensitive compositions
US5212210A (en) * 1992-03-18 1993-05-18 Minnesota Mining And Manufacturing Company Energy curable compositions having improved cure speeds
US5667893A (en) * 1992-10-09 1997-09-16 Minnesota Mining And Manufacturing Company Substrate coated or impregnated with flexible epoxy composition
US5385955A (en) * 1992-11-05 1995-01-31 Essilor Of America, Inc. Organosilane coating composition for ophthalmic lens
FR2702485B1 (en) * 1993-03-10 1995-04-14 Rhone Poulenc Chimie Compositions based on cationically crosslinkable polyorganosiloxanes and their use in the field of paper anti-adhesion, protection of optical fibers and printed circuits.
US5744557A (en) * 1993-06-16 1998-04-28 Minnesota Mining And Manufacturing Company Energy-curable cyanate/ethylenically unsaturated compositions
US5494943A (en) * 1993-06-16 1996-02-27 Minnesota Mining And Manufacturing Company Stabilized cationically-curable compositions
US5514728A (en) * 1993-07-23 1996-05-07 Minnesota Mining And Manufacturing Company Catalysts and initiators for polymerization
ES2147777T3 (en) * 1993-09-16 2000-10-01 Ciba Sc Holding Ag VINILETER COMPOUNDS WITH ADDITIONAL FUNCTIONAL GROUPS, OTHER THAN VINILETER, AND THEIR USE IN THE FORMULATION OF RETICULABLE COMPOUNDS.
US5670590A (en) * 1994-05-06 1997-09-23 Minnesota Mining And Manufacturing Company Energy polymerizable compositions, homopolymers and copolymers of oxazolines
TW418215B (en) 1995-03-13 2001-01-11 Ciba Sc Holding Ag A process for the production of three-dimensional articles in a stereolithography bath comprising the step of sequentially irradiating a plurality of layers of a liquid radiation-curable composition
JPH0954437A (en) 1995-06-05 1997-02-25 Fuji Photo Film Co Ltd Chemical amplification type positive resist composition
EP0889360B1 (en) * 1997-06-30 2002-01-30 Siemens Aktiengesellschaft Reactive resin mixtures and their use
EP0889361B1 (en) * 1997-06-30 2002-01-23 Siemens Aktiengesellschaft Initiators for cationic polymerization
CA2296587A1 (en) * 1997-07-21 1999-02-04 Ciba Specialty Chemicals Holding Inc. Viscosity stabilization of radiation-curable compositions
US6133335A (en) * 1998-12-31 2000-10-17 3M Innovative Properties Company Photo-polymerizable compositions and articles made therefrom
US6482868B1 (en) 1998-12-31 2002-11-19 3M Innovative Properties Company Accelerators useful for energy polymerizable compositions
US6265459B1 (en) 1998-12-31 2001-07-24 3M Innovative Properties Company Accelerators useful for energy polymerizable compositions
ATE292845T1 (en) * 1999-08-04 2005-04-15 Siemens Ag INSULATED TAPE-SHAPED SUPERCONDUCTOR HAVING HIGH-TC OXIDE SUPERCONDUCTOR MATERIAL AND METHOD FOR INSULATING THE SUPERCONDUCTOR
US6572693B1 (en) 1999-10-28 2003-06-03 3M Innovative Properties Company Aesthetic dental materials
US6376590B2 (en) 1999-10-28 2002-04-23 3M Innovative Properties Company Zirconia sol, process of making and composite material
US6387981B1 (en) 1999-10-28 2002-05-14 3M Innovative Properties Company Radiopaque dental materials with nano-sized particles
US6730156B1 (en) 1999-10-28 2004-05-04 3M Innovative Properties Company Clustered particle dental fillers
EP1586294B2 (en) 1999-10-28 2016-02-17 3M Innovative Properties Company Nano-sized silica particles in a dry powder form
US6635689B1 (en) 2000-06-26 2003-10-21 3M Innovative Properties Company Accelerators for cationic polymerization catalyzed by iron-based catalysts
US7192681B2 (en) 2001-07-05 2007-03-20 Fuji Photo Film Co., Ltd. Positive photosensitive composition
AU2003209430B2 (en) 2002-01-31 2008-09-11 3M Innovative Properties Company Dental pastes, dental articles, and methods
US7521168B2 (en) 2002-02-13 2009-04-21 Fujifilm Corporation Resist composition for electron beam, EUV or X-ray
US20040062682A1 (en) * 2002-09-30 2004-04-01 Rakow Neal Anthony Colorimetric sensor
US7449146B2 (en) * 2002-09-30 2008-11-11 3M Innovative Properties Company Colorimetric sensor
US6841333B2 (en) * 2002-11-01 2005-01-11 3M Innovative Properties Company Ionic photoacid generators with segmented hydrocarbon-fluorocarbon sulfonate anions
US7771915B2 (en) 2003-06-27 2010-08-10 Fujifilm Corporation Two-photon absorbing optical recording material and two-photon absorbing optical recording and reproducing method
JP4612999B2 (en) 2003-10-08 2011-01-12 富士フイルム株式会社 Positive resist composition and pattern forming method using the same
JP4448705B2 (en) 2004-02-05 2010-04-14 富士フイルム株式会社 Photosensitive composition and pattern forming method using the photosensitive composition
JP2005309359A (en) 2004-03-25 2005-11-04 Fuji Photo Film Co Ltd Hologram recording material, hologram recording method, optical recording medium, three-dimensional display hologram, and holographic optical element
JP2005300908A (en) 2004-04-12 2005-10-27 Konica Minolta Medical & Graphic Inc Photosensitive composition and photosensitive lithographic printing plate material
US7553670B2 (en) * 2004-04-28 2009-06-30 3M Innovative Properties Company Method for monitoring a polymerization in a three-dimensional sample
JP4524154B2 (en) 2004-08-18 2010-08-11 富士フイルム株式会社 Chemically amplified resist composition and pattern forming method using the same
JP4396443B2 (en) 2004-08-18 2010-01-13 コニカミノルタエムジー株式会社 Method for producing and using photosensitive lithographic printing plate
EP1637927A1 (en) 2004-09-02 2006-03-22 Fuji Photo Film Co., Ltd. Positive resist composition and pattern forming method using the same
JP4469692B2 (en) 2004-09-14 2010-05-26 富士フイルム株式会社 Photosensitive composition, compound used for photosensitive composition, and pattern formation method using the photosensitive composition
JP4715752B2 (en) 2004-12-09 2011-07-06 コニカミノルタエムジー株式会社 Ink set, ink jet recording method and ink jet recording apparatus using photocurable ink
TWI530759B (en) 2005-01-24 2016-04-21 富士軟片股份有限公司 Positive resist composition for immersion exposure and pattern-forming method using the same
JP4452632B2 (en) 2005-01-24 2010-04-21 富士フイルム株式会社 Photosensitive composition, compound used for photosensitive composition, and pattern formation method using the photosensitive composition
JP4562537B2 (en) 2005-01-28 2010-10-13 富士フイルム株式会社 Photosensitive composition, compound used for photosensitive composition, and pattern formation method using the photosensitive composition
JP4439409B2 (en) 2005-02-02 2010-03-24 富士フイルム株式会社 Resist composition and pattern forming method using the same
US8741537B2 (en) 2005-03-04 2014-06-03 Fujifilm Corporation Positive resist composition and pattern-forming method using the same
US20060204732A1 (en) 2005-03-08 2006-09-14 Fuji Photo Film Co., Ltd. Ink composition, inkjet recording method, printed material, method of producing planographic printing plate, and planographic printing plate
JP4579019B2 (en) 2005-03-17 2010-11-10 富士フイルム株式会社 Positive resist composition and pattern forming method using the resist composition
EP1720072B1 (en) 2005-05-01 2019-06-05 Rohm and Haas Electronic Materials, L.L.C. Compositons and processes for immersion lithography
JP4724465B2 (en) 2005-05-23 2011-07-13 富士フイルム株式会社 Photosensitive composition and pattern forming method using the photosensitive composition
JP4861767B2 (en) 2005-07-26 2012-01-25 富士フイルム株式会社 Positive resist composition and pattern forming method using the same
JP4580841B2 (en) 2005-08-16 2010-11-17 富士フイルム株式会社 Positive resist composition and pattern forming method using the same
JP4695941B2 (en) 2005-08-19 2011-06-08 富士フイルム株式会社 Positive resist composition for immersion exposure and pattern forming method using the same
DE602006003029D1 (en) 2005-08-23 2008-11-20 Fujifilm Corp Curable ink containing modified oxetane
JP4757574B2 (en) 2005-09-07 2011-08-24 富士フイルム株式会社 Ink composition, inkjet recording method, printed matter, planographic printing plate manufacturing method, and planographic printing plate
TWI403843B (en) 2005-09-13 2013-08-01 Fujifilm Corp Positive resist composition and pattern-forming method using the same
US20090110832A1 (en) 2005-11-01 2009-04-30 Konica Minolta Medical & Graphic, Inc. Planographic printing plate material, planographic printing plate, planographic printing plate preparing process and printing process employing planographic printing plate
EP1783184B9 (en) 2005-11-04 2011-05-11 Fujifilm Corporation Curable ink composition and oxetane compound
TWI443461B (en) 2005-12-09 2014-07-01 Fujifilm Corp Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition
EP1829684B1 (en) 2006-03-03 2011-01-26 FUJIFILM Corporation Curable composition, ink composition, inkjet-recording method, and planographic printing plate
US7767143B2 (en) * 2006-06-27 2010-08-03 3M Innovative Properties Company Colorimetric sensors
JP4911456B2 (en) 2006-11-21 2012-04-04 富士フイルム株式会社 POSITIVE PHOTOSENSITIVE COMPOSITION, POLYMER COMPOUND USED FOR POSITIVE PHOTOSENSITIVE COMPOSITION, METHOD FOR PRODUCING THE POLYMER COMPOUND, AND PATTERN FORMATION METHOD USING POSITIVE SENSITIVE COMPOSITION
JP4554665B2 (en) 2006-12-25 2010-09-29 富士フイルム株式会社 PATTERN FORMATION METHOD, POSITIVE RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED FOR THE PATTERN FORMATION METHOD, NEGATIVE DEVELOPMENT SOLUTION USED FOR THE PATTERN FORMATION METHOD, AND NEGATIVE DEVELOPMENT RINSE SOLUTION USED FOR THE PATTERN FORMATION METHOD
US8647426B2 (en) 2006-12-28 2014-02-11 3M Innovative Properties Company Dental filler and methods
JP2008189776A (en) 2007-02-02 2008-08-21 Fujifilm Corp Active radiation-curable polymerizable composition, ink composition, inkjet recording method, printed matter, preparation method of lithographic printing plate, and lithographic printing plate
WO2008096618A1 (en) 2007-02-09 2008-08-14 Konica Minolta Medical & Graphic, Inc. Inkjet head, inkjet printer, and inkjet recording method
JP4905786B2 (en) 2007-02-14 2012-03-28 富士フイルム株式会社 Resist composition and pattern forming method using the same
EP1962139A1 (en) 2007-02-23 2008-08-27 FUJIFILM Corporation Negative resist composition and pattern forming method using the same
JP2008208266A (en) 2007-02-27 2008-09-11 Fujifilm Corp Ink composition, inkjet recording method, printed material, method for producing planographic printing plate, and planographic printing plate
JP5162290B2 (en) 2007-03-23 2013-03-13 富士フイルム株式会社 Resist composition and pattern forming method using the same
US8088566B2 (en) 2007-03-26 2012-01-03 Fujifilm Corporation Surface-treating agent for pattern formation and pattern-forming method using the surface-treating agent
US7592118B2 (en) 2007-03-27 2009-09-22 Fujifilm Corporation Positive resist composition and pattern forming method using the same
EP1975716B1 (en) 2007-03-28 2013-05-15 Fujifilm Corporation Positive resist composition and pattern forming method
EP1975714A1 (en) 2007-03-28 2008-10-01 FUJIFILM Corporation Positive resist composition and pattern forming method
US8182975B2 (en) 2007-03-28 2012-05-22 Fujifilm Corporation Positive resist composition and pattern forming method using the same
US20080241745A1 (en) 2007-03-29 2008-10-02 Fujifilm Corporation Negative resist composition and pattern forming method using the same
JP4982228B2 (en) 2007-03-30 2012-07-25 富士フイルム株式会社 Positive resist composition and pattern forming method using the same
JP5159141B2 (en) 2007-03-30 2013-03-06 富士フイルム株式会社 Ink composition, inkjet recording method, printed matter, lithographic printing plate preparation method
JP5039622B2 (en) 2007-03-30 2012-10-03 富士フイルム株式会社 Positive resist composition and pattern forming method using the same
EP1980911A3 (en) 2007-04-13 2009-06-24 FUJIFILM Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
WO2008129964A1 (en) 2007-04-13 2008-10-30 Fujifilm Corporation Method for pattern formation, and resist composition, developing solution and rinsing liquid for use in the method for pattern formation
JP4617337B2 (en) 2007-06-12 2011-01-26 富士フイルム株式会社 Pattern formation method
JP2009020510A (en) 2007-06-15 2009-01-29 Fujifilm Corp Surface treatment agent for forming pattern, and pattern forming method using treatment agent
JP2008311474A (en) 2007-06-15 2008-12-25 Fujifilm Corp Method of forming pattern
JP2009009047A (en) 2007-06-29 2009-01-15 Fujifilm Corp Pattern forming method
US8088550B2 (en) 2007-07-30 2012-01-03 Fujifilm Corporation Positive resist composition and pattern forming method
JP5066405B2 (en) 2007-08-02 2012-11-07 富士フイルム株式会社 Resist composition for electron beam, X-ray or EUV, and pattern forming method using the composition
EP2020617A3 (en) 2007-08-03 2009-04-29 FUJIFILM Corporation Resist composition containing a sulfonium compound, pattern-forming method using the resist composition, and sulfonium compound
EP2177952A4 (en) 2007-08-10 2011-05-04 Fujifilm Corp Positive working resist composition and method for pattern formation using the positive working resist composition
JP5449675B2 (en) 2007-09-21 2014-03-19 富士フイルム株式会社 Photosensitive composition, pattern forming method using the photosensitive composition, and compound used in the photosensitive composition
JP5111039B2 (en) 2007-09-27 2012-12-26 富士フイルム株式会社 Photocurable composition containing a polymerizable compound, a polymerization initiator, and a dye
JP4911469B2 (en) 2007-09-28 2012-04-04 富士フイルム株式会社 Resist composition and pattern forming method using the same
US8240838B2 (en) 2007-11-29 2012-08-14 Fujifilm Corporation Ink composition for inkjet recording, inkjet recording method, and printed material
JP5150296B2 (en) 2008-02-13 2013-02-20 富士フイルム株式会社 Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same
US9046773B2 (en) 2008-03-26 2015-06-02 Fujifilm Corporation Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method using the same, polymerizable compound and polymer compound obtained by polymerizing the polymerizable compound
US8454152B2 (en) 2008-06-23 2013-06-04 Konica Minolta Holdings, Inc. Ink jet recording device and ink jet recording method
JP5244711B2 (en) 2008-06-30 2013-07-24 富士フイルム株式会社 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same
JP5997873B2 (en) 2008-06-30 2016-09-28 富士フイルム株式会社 Photosensitive composition and pattern forming method using the same
JP5746818B2 (en) 2008-07-09 2015-07-08 富士フイルム株式会社 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same
JP5383133B2 (en) 2008-09-19 2014-01-08 富士フイルム株式会社 Ink composition, ink jet recording method, and method for producing printed product
ATE541905T1 (en) 2008-09-26 2012-02-15 Fujifilm Corp INK COMPOSITION AND INK RECORDING METHOD
JP5461809B2 (en) 2008-09-29 2014-04-02 富士フイルム株式会社 Ink composition and inkjet recording method
WO2010053004A1 (en) 2008-11-07 2010-05-14 コニカミノルタホールディングス株式会社 Active-ray-curable inkjet ink and inkjet recording method
JP2010115791A (en) 2008-11-11 2010-05-27 Konica Minolta Ij Technologies Inc Image forming apparatus
EP2196462B1 (en) 2008-12-12 2011-09-28 Fujifilm Corporation Polymerizable compound, lactone-containing compound, method for manufacturing lactone-containing compound and polymer compound obtained by polymerizing the polymerizable compound
JP2010235911A (en) 2009-03-11 2010-10-21 Konica Minolta Ij Technologies Inc Active energy ray curable ink-jet ink, ink-jet recording method, and printed matter
JP5964007B2 (en) 2009-04-02 2016-08-03 コニカミノルタ株式会社 Active energy ray-curable inkjet ink, inkjet recording method, and printed matter
JP5783687B2 (en) * 2009-06-23 2015-09-24 住友化学株式会社 Resin and resist composition
CN102002121A (en) 2009-08-31 2011-04-06 住友化学株式会社 Resin, resist composition and method for producing resist pattern
JP2011074365A (en) * 2009-09-02 2011-04-14 Sumitomo Chemical Co Ltd Compound, resin, resist composition and manufacturing method of resist pattern
TWI499581B (en) 2010-07-28 2015-09-11 Sumitomo Chemical Co Photoresist composition
US9016846B2 (en) 2010-08-19 2015-04-28 Konica Minolta Holdings, Inc. Actinic energy radiation curable inkjet ink and actinic energy radiation curable inkjet recording method
TWI521302B (en) 2010-08-30 2016-02-11 住友化學股份有限公司 Resist composition and method for producing resist pattern
JP2012087294A (en) 2010-09-21 2012-05-10 Sumitomo Chemical Co Ltd Resin, resist composition, and manufacturing method of resist pattern
JP5824321B2 (en) 2010-10-26 2015-11-25 住友化学株式会社 Resist composition and method for producing resist pattern
JP5824320B2 (en) 2010-10-26 2015-11-25 住友化学株式会社 Resist composition and method for producing resist pattern
JP5879834B2 (en) 2010-11-15 2016-03-08 住友化学株式会社 Salt, resist composition and method for producing resist pattern
CN103249568B (en) 2010-12-10 2015-05-06 柯尼卡美能达株式会社 Inkjet recording device
JP6088133B2 (en) 2010-12-15 2017-03-01 住友化学株式会社 Resist composition and method for producing resist pattern
JP5829940B2 (en) 2011-02-25 2015-12-09 住友化学株式会社 Resist composition and method for producing resist pattern
JP5947053B2 (en) 2011-02-25 2016-07-06 住友化学株式会社 Resist composition and method for producing resist pattern
JP5898521B2 (en) 2011-02-25 2016-04-06 住友化学株式会社 Resist composition and method for producing resist pattern
JP5898520B2 (en) 2011-02-25 2016-04-06 住友化学株式会社 Resist composition and method for producing resist pattern
JP5829941B2 (en) 2011-02-25 2015-12-09 住友化学株式会社 Resist composition and method for producing resist pattern
JP6034025B2 (en) 2011-02-25 2016-11-30 住友化学株式会社 Resist composition and method for producing resist pattern
JP6034026B2 (en) 2011-02-25 2016-11-30 住友化学株式会社 Resist composition and method for producing resist pattern
JP5829939B2 (en) 2011-02-25 2015-12-09 住友化学株式会社 Resist composition and method for producing resist pattern
JP5947051B2 (en) 2011-02-25 2016-07-06 住友化学株式会社 Resist composition and method for producing resist pattern
KR101546599B1 (en) 2011-03-30 2015-08-21 아사히 가세이 케미칼즈 가부시키가이샤 Organopolysiloxane, method for producing same, and curable resin composition containing organopolysiloxane
JP6022788B2 (en) 2011-04-07 2016-11-09 住友化学株式会社 Resist composition and method for producing resist pattern
JP5852490B2 (en) 2011-04-07 2016-02-03 住友化学株式会社 Resist composition and method for producing resist pattern
JP6005964B2 (en) 2011-04-07 2016-10-12 住友化学株式会社 Resist composition and method for producing resist pattern
JP5934536B2 (en) 2011-04-07 2016-06-15 住友化学株式会社 Resist composition and method for producing resist pattern
JP5954317B2 (en) 2011-04-27 2016-07-20 コニカミノルタ株式会社 Inkjet recording device
JP6189020B2 (en) 2011-07-19 2017-08-30 住友化学株式会社 Resist composition and method for producing resist pattern
JP6013799B2 (en) 2011-07-19 2016-10-25 住友化学株式会社 Resist composition and method for producing resist pattern
JP5996944B2 (en) 2011-07-19 2016-09-21 住友化学株式会社 Resist composition and method for producing resist pattern
JP5985898B2 (en) 2011-07-19 2016-09-06 住友化学株式会社 Resist composition and method for producing resist pattern
JP5912912B2 (en) 2011-07-19 2016-04-27 住友化学株式会社 Resist composition and method for producing resist pattern
JP6013797B2 (en) 2011-07-19 2016-10-25 住友化学株式会社 Resist composition and method for producing resist pattern
JP5977595B2 (en) 2011-07-19 2016-08-24 住友化学株式会社 Resist composition and method for producing resist pattern
JP5990041B2 (en) 2011-07-19 2016-09-07 住友化学株式会社 Resist composition and method for producing resist pattern
JP6130631B2 (en) 2011-07-19 2017-05-17 住友化学株式会社 Resist composition and method for producing resist pattern
JP5977594B2 (en) 2011-07-19 2016-08-24 住友化学株式会社 Resist composition and method for producing resist pattern
JP5977593B2 (en) 2011-07-19 2016-08-24 住友化学株式会社 Resist composition and method for producing resist pattern
JP5886696B2 (en) 2011-07-19 2016-03-16 住友化学株式会社 Resist composition and method for producing resist pattern
JP6130630B2 (en) 2011-07-19 2017-05-17 住友化学株式会社 Resist composition and method for producing resist pattern
JP6013798B2 (en) 2011-07-19 2016-10-25 住友化学株式会社 Resist composition and method for producing resist pattern
US9527310B2 (en) 2012-03-01 2016-12-27 Konica Minolta, Inc. Inkjet printing method
EP2845733B1 (en) 2012-05-01 2017-06-21 Konica Minolta, Inc. Image formation device
JP5957377B2 (en) * 2012-12-27 2016-07-27 Jxエネルギー株式会社 Heat medium composition
EP2979878B1 (en) 2013-03-29 2020-09-02 Konica Minolta, Inc. Image formation device
CN105164220B (en) 2013-04-30 2017-11-03 3M创新有限公司 For preparing poly- (benzoxazines) method
US10040905B2 (en) 2013-10-16 2018-08-07 3M Innovative Properties Company Benzoxazine polymerization
JP6576162B2 (en) 2014-08-25 2019-09-18 住友化学株式会社 Resist composition and method for producing resist pattern
JP6541508B2 (en) 2014-08-25 2019-07-10 住友化学株式会社 Salt, resin, resist composition and method for producing resist pattern
JP6595255B2 (en) 2014-08-25 2019-10-23 住友化学株式会社 Resist composition and method for producing resist pattern
JP6507065B2 (en) 2014-08-25 2019-04-24 住友化学株式会社 Compound, resin, resist composition and method for producing resist pattern
JP6615536B2 (en) 2014-08-25 2019-12-04 住友化学株式会社 Resist composition and method for producing resist pattern
JP6596263B2 (en) 2014-08-25 2019-10-23 住友化学株式会社 Compound, resin, resist composition, and method for producing resist pattern
US9405191B2 (en) 2014-09-16 2016-08-02 Sumitomo Chemical Company, Limited Resin, resist composition and method for producing resist pattern
US9996002B2 (en) 2014-09-16 2018-06-12 Sumitomo Chemical Company, Limited Resin, resist composition and method for producing resist pattern
JP6706891B2 (en) 2014-09-16 2020-06-10 住友化学株式会社 Resist composition and method for producing resist pattern
JP6533724B2 (en) 2014-09-16 2019-06-19 住友化学株式会社 Resin, resist composition and method for producing resist pattern
US9519218B2 (en) 2014-09-16 2016-12-13 Sumitomo Chemical Company, Limited Resin, resist composition and method for producing resist pattern
JP6706890B2 (en) 2014-09-16 2020-06-10 住友化学株式会社 Resin, resist composition, and method for producing resist pattern
JP6688041B2 (en) 2014-11-11 2020-04-28 住友化学株式会社 Resist composition and method for producing resist pattern
JP6585471B2 (en) 2014-11-11 2019-10-02 住友化学株式会社 Resist composition and method for producing resist pattern
JP6670591B2 (en) 2014-11-11 2020-03-25 住友化学株式会社 Resist composition and method for producing resist pattern
JP6684075B2 (en) 2014-11-11 2020-04-22 住友化学株式会社 Resin, resist composition, and method for producing resist pattern
JP6664932B2 (en) 2014-11-14 2020-03-13 住友化学株式会社 Resin, resist composition and method for producing resist pattern
JP6782070B2 (en) 2014-11-26 2020-11-11 住友化学株式会社 Method for manufacturing resist composition and resist pattern
JP6721319B2 (en) 2014-11-26 2020-07-15 住友化学株式会社 Nonionic compound, resin, resist composition, and method for producing resist pattern
US9946157B2 (en) 2015-03-31 2018-04-17 Sumitomo Chemical Company, Limited Resist composition and method for producing resist pattern
JP6843515B2 (en) 2015-03-31 2021-03-17 住友化学株式会社 Method for manufacturing resist composition and resist pattern
US10101657B2 (en) 2015-03-31 2018-10-16 Sumitomo Chemical Company, Limited Resin, resist composition and method for producing resist pattern
JP6783540B2 (en) 2015-03-31 2020-11-11 住友化学株式会社 Method for manufacturing resist composition and resist pattern
JP6769735B2 (en) 2015-05-12 2020-10-14 住友化学株式会社 Method for producing salt, acid generator, resin, resist composition and resist pattern
EP3307807A1 (en) 2015-06-09 2018-04-18 3M Innovative Properties Company Ammonium salt catalyzed benzoxazine polymerization
JP6782102B2 (en) 2015-06-26 2020-11-11 住友化学株式会社 Resist composition
JP6864994B2 (en) 2015-06-26 2021-04-28 住友化学株式会社 Resist composition
JP6883954B2 (en) 2015-06-26 2021-06-09 住友化学株式会社 Resist composition
JP7042598B2 (en) 2016-12-14 2022-03-28 住友化学株式会社 Method for manufacturing resin, resist composition and resist pattern
JP6963979B2 (en) 2016-12-14 2021-11-10 住友化学株式会社 Method for manufacturing resin, resist composition and resist pattern
WO2018147094A1 (en) 2017-02-08 2018-08-16 住友化学株式会社 Compound, resin, resist composition and method for producing resist pattern
JP7283883B2 (en) 2017-11-09 2023-05-30 住友化学株式会社 Salt, acid generator, resist composition and method for producing resist pattern
US11378883B2 (en) 2018-04-12 2022-07-05 Sumitomo Chemical Company, Limited Salt, acid generator, resist composition and method for producing resist pattern
US11820735B2 (en) 2018-04-12 2023-11-21 Sumitomo Chemical Company, Limited Salt, acid generator, resist composition and method for producing resist pattern
JP7269093B2 (en) 2018-05-29 2023-05-08 住友化学株式会社 Salt, acid generator, resist composition and method for producing resist pattern
JP2020029451A (en) 2018-08-17 2020-02-27 住友化学株式会社 Salt, acid generator, resist composition and manufacturing method of resist pattern
JP7341787B2 (en) 2018-08-27 2023-09-11 住友化学株式会社 Resin, resist composition, and method for producing resist pattern
JP7389622B2 (en) 2018-11-20 2023-11-30 住友化学株式会社 Salt, quencher, resist composition, and method for producing resist pattern
JP7412186B2 (en) 2019-01-18 2024-01-12 住友化学株式会社 Resin, resist composition, and method for producing resist pattern
JP7471828B2 (en) 2019-01-18 2024-04-22 住友化学株式会社 Resist composition and method for producing resist pattern
BE1027107B1 (en) 2019-03-25 2021-02-15 Sumitomo Chemical Co COMPOUND, RESIN, PHOTORESIST COMPOSITION AND PROCESS FOR THE PRODUCTION OF PHOTORESIST PATTERNS
JP2020189830A (en) 2019-05-17 2020-11-26 住友化学株式会社 Salt, quencher, resist composition, and method for producing resist pattern
JP2020200311A (en) 2019-06-04 2020-12-17 住友化学株式会社 Salt, quencher, resist composition and method for producing resist pattern and method for producing salt
JP2020200310A (en) 2019-06-04 2020-12-17 住友化学株式会社 Salt, quencher, resist composition and method for producing resist pattern
JP2021038204A (en) 2019-08-29 2021-03-11 住友化学株式会社 Salt, quencher, resist composition and method for producing resist pattern
JP2021038203A (en) 2019-08-29 2021-03-11 住友化学株式会社 Salt, quencher, resist composition and method for producing resist pattern
JP2021130807A (en) 2019-12-18 2021-09-09 住友化学株式会社 Resin, resist composition, method for producing resist pattern, and compound
JP2021123580A (en) 2020-02-06 2021-08-30 住友化学株式会社 Carboxylate, carboxylic acid generator, resist composition, and method for producing resist pattern
JP2021123579A (en) 2020-02-06 2021-08-30 住友化学株式会社 Salt, acid generator, resist composition, and method for producing resist pattern
US11681220B2 (en) 2020-03-05 2023-06-20 Sumitomo Chemical Company, Limited Resist composition and method for producing resist pattern
US11740555B2 (en) 2020-03-05 2023-08-29 Sumitomo Chemical Company, Limited Resist composition and method for producing resist pattern
US11675267B2 (en) 2020-03-23 2023-06-13 Sumitomo Chemical Company, Limited Resist composition and method for producing resist pattern
TW202146383A (en) 2020-04-22 2021-12-16 日商住友化學股份有限公司 Salt, acid generator, resist composition and method for producing resist pattern
JP2021181431A (en) 2020-05-15 2021-11-25 住友化学株式会社 Carboxylate, quencher, resist composition, and method for producing resist pattern
TW202202476A (en) 2020-05-21 2022-01-16 日商住友化學股份有限公司 Salt, acid generator, resist composition, and manufacturing method of resist pattern Capable of producing a resist pattern having good CD uniformity (CDU), and a resist composition containing the same
TW202215157A (en) 2020-06-01 2022-04-16 日商住友化學股份有限公司 Compound, resin, resist composition and method for producing resist pattern
JP2021188041A (en) 2020-06-01 2021-12-13 住友化学株式会社 Compound, resin, resist composition, and method for producing resist pattern
JP2022008152A (en) 2020-06-25 2022-01-13 住友化学株式会社 Salt, acid generator, resist composition and method for producing resist pattern
JP2022013736A (en) 2020-07-01 2022-01-18 住友化学株式会社 Salt, acid generator, resist composition and production method of resist pattern
JP2022075556A (en) 2020-11-06 2022-05-18 住友化学株式会社 Salt, acid generator, resist composition, and method for producing resist pattern
JP2022077505A (en) 2020-11-11 2022-05-23 住友化学株式会社 Carboxylate, resist composition, and method for producing resist pattern
JP2022077982A (en) 2020-11-12 2022-05-24 住友化学株式会社 Salt, acid generator, resist composition, and method for producing resist pattern
JP2022123839A (en) 2021-02-12 2022-08-24 住友化学株式会社 Salt, acid generator, resist composition, and method for producing resist pattern
JP2022164585A (en) 2021-04-15 2022-10-27 住友化学株式会社 Salt, acid generator, resist composition, and method for producing resist pattern
JP2022164583A (en) 2021-04-15 2022-10-27 住友化学株式会社 Salt, acid generator, resist composition, and method for producing resist pattern
US20230004084A1 (en) 2021-05-06 2023-01-05 Sumitomo Chemical Company, Limited Salt, acid generator, resist composition and method for producing resist pattern
JP2022183077A (en) 2021-05-28 2022-12-08 住友化学株式会社 Salt, acid generator, resist composition, and method for producing resist pattern
JP2022183074A (en) 2021-05-28 2022-12-08 住友化学株式会社 Salt, acid generator, resist composition, and method for producing resist pattern
TW202311315A (en) 2021-08-06 2023-03-16 日商住友化學股份有限公司 Resist composition and method for producing resist pattern capable of producing a resist pattern having few defects and good CD uniformity

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3425988A (en) * 1965-01-27 1969-02-04 Loctite Corp Polyurethane polyacrylate sealant compositions
GB1285284A (en) * 1969-05-26 1972-08-16 Hitachi Ltd Epoxy resin composition
US3855040A (en) * 1972-07-03 1974-12-17 Loctite Corp Anaerobic compositions
GB1465200A (en) * 1973-09-03 1977-02-23 Dainichi Nippon Cables Ltd Composition for electrical insulation
US4273668A (en) * 1977-09-14 1981-06-16 General Electric Company Arylsulfonium salt-solvent mixtures
US4343885A (en) * 1978-05-09 1982-08-10 Dynachem Corporation Phototropic photosensitive compositions containing fluoran colorformer
EP0094915B1 (en) * 1982-05-19 1987-01-21 Ciba-Geigy Ag Curable compositions containing metallocen complexes, activated primers obtained therefrom and their use
IE54465B1 (en) * 1982-05-26 1989-10-25 Loctite Ltd Two-part self-indicating adhesive composition
US4446246A (en) * 1982-09-09 1984-05-01 Three Bond Co., Ltd. Catalyst systems for two-pack acrylic adhesive formulations
US4808638A (en) * 1986-10-14 1989-02-28 Loctite Corporation Thiolene compositions on based bicyclic 'ene compounds
US4857437A (en) * 1986-12-17 1989-08-15 Ciba-Geigy Corporation Process for the formation of an image
JPH0258528A (en) * 1988-08-25 1990-02-27 Mitsui Petrochem Ind Ltd Active energy ray-curable composition and bonding of optical disc substrate to hub using said composition

Also Published As

Publication number Publication date
EP0126712A1 (en) 1984-11-28
ZA843733B (en) 1985-01-30
EP0126712B1 (en) 1986-12-10
AU573219B2 (en) 1988-06-02
JPS59219307A (en) 1984-12-10
JPH0639483B2 (en) 1994-05-25
BR8402336A (en) 1984-12-26
AU2831484A (en) 1984-11-22
DE3461677D1 (en) 1987-01-22
KR920005529B1 (en) 1992-07-06
US5073476A (en) 1991-12-17
ES8602043A1 (en) 1985-11-16
ATE24243T1 (en) 1986-12-15
ES532965A0 (en) 1985-11-16
KR840009315A (en) 1984-12-26

Similar Documents

Publication Publication Date Title
CA1269791A (en) Curable composition and the use thereof
CA1293835C (en) Hardenable composition and its use
US4868288A (en) Process for preparing metallocene complexes
CA1149546A (en) Photopolymerisation by means of sulphoxonium salts
CA1157600A (en) Epoxide-containing compositions and their polymerisation
US4734444A (en) Curable mixtures containing N-sulfonylaminosulfonium salts as cationically active catalysts
CA1114089A (en) Photopolymerizable compositions containing epoxy and hydroxyl-containing organic materials and aromatic iodonium or sulfonium salt photo initiators
US5565500A (en) Cationically polymerizable mixtures containing selected metallocene complex salts as curing agents
EP0164314B1 (en) Sulfoxonium salts
GB1561591A (en) Photocurable compositions and polymerization method
AU710383B2 (en) Curing process for cationically photocurable formulations
DE3918105A1 (en) PHOTOPOLYMERIZABLE COMPOSITION
US4994346A (en) Negative photoresist based on polyphenols and selected epoxy or vinyl ether compounds
WO1999028295A1 (en) Novel aromatic sulfonium compounds, photoacid generators comprising the same, photopolymerizable compositions containing the same, stereolithographic resin compositions, and stereolithographic process
WO2006109572A1 (en) Reactive epoxy carboxylates and actinic radiation curable resin compositions containing the same
JPS6026128B2 (en) Method for manufacturing curable resin
CA1136340A (en) Hydroxyl-containing compositions and their polymerisation
JPS60184518A (en) Curable composition and use
JPH0245641B2 (en) HIKARIJUGOSEISOSEIBUTSUOYOBISONOJUGOHO
EP1698646A1 (en) Photocurable composition and photocurable compound
CA1307002C (en) Process for preparing metallocene complexes
KR920002487B1 (en) Curable compositions containing metallocene complexes the activated precursors obtainable therefrom and the use thereof
CA1044398A (en) Light-sensitive compounds and photoresists containing the same
JPS6228972B2 (en)
KR20060116744A (en) Alkali development resin composition

Legal Events

Date Code Title Description
MKLA Lapsed