CA1279110C - Temperature stabilized rf detector - Google Patents

Temperature stabilized rf detector

Info

Publication number
CA1279110C
CA1279110C CA000570975A CA570975A CA1279110C CA 1279110 C CA1279110 C CA 1279110C CA 000570975 A CA000570975 A CA 000570975A CA 570975 A CA570975 A CA 570975A CA 1279110 C CA1279110 C CA 1279110C
Authority
CA
Canada
Prior art keywords
voltage
terminal
diode
signal
input terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA000570975A
Other languages
French (fr)
Inventor
Yoshiharu Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of CA1279110C publication Critical patent/CA1279110C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03LAUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L7/00Automatic control of frequency or phase; Synchronisation
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D1/00Demodulation of amplitude-modulated oscillations
    • H03D1/08Demodulation of amplitude-modulated oscillations by means of non-linear two-pole elements
    • H03D1/10Demodulation of amplitude-modulated oscillations by means of non-linear two-pole elements of diodes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01FMIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/20Mixing gases with liquids
    • B01F23/23Mixing gases with liquids by introducing gases into liquid media, e.g. for producing aerated liquids
    • B01F23/233Mixing gases with liquids by introducing gases into liquid media, e.g. for producing aerated liquids using driven stirrers with completely immersed stirring elements
    • B01F23/2331Mixing gases with liquids by introducing gases into liquid media, e.g. for producing aerated liquids using driven stirrers with completely immersed stirring elements characterised by the introduction of the gas along the axis of the stirrer or along the stirrer elements
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01FMIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/20Mixing gases with liquids
    • B01F23/23Mixing gases with liquids by introducing gases into liquid media, e.g. for producing aerated liquids
    • B01F23/233Mixing gases with liquids by introducing gases into liquid media, e.g. for producing aerated liquids using driven stirrers with completely immersed stirring elements
    • B01F23/2331Mixing gases with liquids by introducing gases into liquid media, e.g. for producing aerated liquids using driven stirrers with completely immersed stirring elements characterised by the introduction of the gas along the axis of the stirrer or along the stirrer elements
    • B01F23/23314Mixing gases with liquids by introducing gases into liquid media, e.g. for producing aerated liquids using driven stirrers with completely immersed stirring elements characterised by the introduction of the gas along the axis of the stirrer or along the stirrer elements through a hollow stirrer element
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01FMIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/20Mixing gases with liquids
    • B01F23/23Mixing gases with liquids by introducing gases into liquid media, e.g. for producing aerated liquids
    • B01F23/233Mixing gases with liquids by introducing gases into liquid media, e.g. for producing aerated liquids using driven stirrers with completely immersed stirring elements
    • B01F23/2331Mixing gases with liquids by introducing gases into liquid media, e.g. for producing aerated liquids using driven stirrers with completely immersed stirring elements characterised by the introduction of the gas along the axis of the stirrer or along the stirrer elements
    • B01F23/23311Mixing gases with liquids by introducing gases into liquid media, e.g. for producing aerated liquids using driven stirrers with completely immersed stirring elements characterised by the introduction of the gas along the axis of the stirrer or along the stirrer elements through a hollow stirrer axis
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01FMIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F27/00Mixers with rotary stirring devices in fixed receptacles; Kneaders
    • B01F27/05Stirrers
    • B01F27/11Stirrers characterised by the configuration of the stirrers
    • B01F27/113Propeller-shaped stirrers for producing an axial flow, e.g. shaped like a ship or aircraft propeller
    • B01F27/1131Propeller-shaped stirrers for producing an axial flow, e.g. shaped like a ship or aircraft propeller with holes in the propeller blade surface
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H03D2200/0041Functional aspects of demodulators
    • H03D2200/0094Measures to address temperature induced variations of demodulation
    • H03D2200/0096Measures to address temperature induced variations of demodulation by stabilising the temperature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Monitoring And Testing Of Transmission In General (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)

Abstract

Abstract of the Disclosure A temperature stabilized RF detector has a first diode connected between an input terminal for receiving an RF signal and an output terminal for outputting the detection signal of the RF signal, and a second diode connected between the input terminal and a constant voltage source through a buffer circuit. Connecting directions of the first and second diodes are opposite to each other in a circuit for connecting the output terminal and the constant voltage source.

Description

91~0 .
.

The present invention relates to an RF (radio frequency) detector and, more particularly, to a temperature stabilized RF detector using a diode.

An RF detector utilizing the half-wave rectification ~unction or a diode has been widely used.
. . .
As shown in the graph of voltage-current characteristics in Fig. l, a diode does not :allow a significant current to pass therethrough until a forward voltage reaches a voltage V1 (e.g., 0.5 V). Fox this reason, in a conventional RF detector, a bias voltage VB near the voltage V1 is applied to the diode to improve a detection sensitivity to a small signal.
Suppose that a detection voltage obtained by rectifying a high frequency signal by the diode is represented by VDET, and a voltage drop across the terminals of the diode due to a current is represented by Vx, an output voltage VO is expressed as follows:

VO = VDET + VB VX (1) Since the voltage drop Vx is given by a function of the current and temperature, if the ~ias voltage VB is constant, the output voltage VO also changes depending on the temperature. To compensate these changes in output ~ i .' '`' 3~

9~10 voltage VO due to the temperature, another diode is coupled to a bias circuit which supplies the biàs voltage VB.
Reference is made to U.S. Patent No. 4,523,155 issued to Walczak et al, June 11, 1985. The RF detector circuit described in this patent does not, however, provide sufficient temperature compensation when an input RF signal is small.

.
- It is an object of the present invention to provide a temperature stabilized RE detector which can provide desirable temperature characteristics for a small signal.
According to the present invention, a temperature stabilized RF detector for detecting an RF signal input at an RF input terminal and outputting a detection voltage from its detection voltage output termlnal, comprises a ~; constant voltage source for outputting-a predetermined first voltage at a low output impedance,. a first diode, an electrode of a first polarity of which is connected to the constant voltage source and an electrode of a second polarity -ofwhich is connected to a predetermined second .. voltage terminal through a resistor, a bufer circuit for . outputting a voltage.substantially equal to a voltage at " the electrode of the second polarity of the first diode at a low output impedance, and a second diode, an electrode of the first po:Larity.of which is connected to the detection voltage output ~erminal, and an electrode of the second 791~) polarity of which is connected to an output terminal of the buffer circuit and the RF input terminal.
Embodiments of the invention will now be described, by way of example, with reference to the accompanying drawinys, in which:
Figure 1 is a graph showing the voltage-current characteristics of a diode: and Figure 2 is a circuit diagram showing an embodiment of the present invention.
- Referring now to Figure 2, reference numeral 11 denotes a power supply terminal of a power supply voltage Vcc; 12, an RF signal input terminal for receiving an RF
signal of a voltage Vj; and 13, a detection voltage output terminal for outputting an RF detection signal of a detection voltage VO.
The power supply terminal 11 is grounded through a series circuit of resistors R1 and R2. The node between the resistors R1 and R2 is connected to the non-inverting input terminal of an operational amplifier A1. That is, a voltage appearing at the non-inverting input terminal of the operational amplifier A1 is maintained at V1 (= Vcc -R2/ ( Rl + R2 ) -' The inverting input terminal of the operational amplifier A1 is directly connected to its output terminal.
Since the output voltage is fed back to the inverting input . .

1'~791~0 terminal, even if the output current changes, the output voltage is maintained at a voltage Vl input at the non-inverting input terminal. More specifically, the operational amplifier Al and resistors R1 and R2 constitute a eonstant voltage source 14 for outputting the voltage V
at a low output impedance.
The cathode of a diode X1 is connected to the output terminal of the operational amplifier Al. The anode of the diode X1 is connected to the power supply terminal 11 through a resistor R3, and to the non-inverting input terminal of an operational amplifier A2.
The inverting input terminal of the operational amplifier A2 is directly connected to its output terminal.
Since the output voltage of the operational amplifier A2 is fed back to its inverting input terminal, even if an output current chan~es, the output voltage can be maintained at a voltage input at its non-inverting input terminal. More specifically, the operational amplifier A2 constitutes a buffer circuit 15 for outputting a voltage at the anode of the diode Xl at a low output impedance.
The operational amplifiers Al and A2 respectively have terminals connected to the power supply terminal 11, and grounded terminals.
The RF input terminal 12 is connected to one terminal of a capacitor C2. The other terminal of the eapaeitor C2 is grounded through a series circuit consisting of an inductor L1 and a capacitor Cl, and is ~'~791~L0 connected to the anode of a diode X2. The series circuit of the inductor Ll and the capacitor Cl constitutes a low pass filter 16 for preventing the RF signal Vi input from the input terminal 12 from flowing toward the operational amplifier A2. The capacitor C2 is a coupling capacitor for coupling the RF signal Vi to the diode X2 and separating the diode X2 ~rom the input terminal 12 in DC voltages.
The node between the inductor Ll and the capacitor C1 is connected to the output terminal of the operational amplifier A2.
The cathode of the diode X2 is connected to one terminal of each of a capacitor C3 and an inductor L2. The other terminal of the capacitor C3 is grounded, and the other terminal of the inductor L2 is connected to the output terminal 13.
One terminal of each of a capacitor C4 and a resistor R4 is connected to the output terminal 13. The other terminal of each of the capacitor C4 and the resistor R4 is grounded. The capacitors C3 and C4 and the inductor L2 constitute a low pass filter 17 which prevents the high frequency signal Vi from flowing toward the output terminal 13, and directly couples the diode X2 to the output terminal 13. The resistor R4 serves as a load resistor.
The operation of the detector shown in Fig. 2 will be described below.
A differential voltage between the power supply voltage Vcc and the constant voltage Vl is applied to the .. . . . . . . . . . .

- ` ~
1;~791~0 series circuit across the diode Xl and the resistor R3.
The resistance of the resistor R3 is adjusted so that a small forward current (to be described later) is flowed through the diode X1. If a voltage drop of the diode X1 is given by vxl, its anode voltage is expressed by Vl + Vxl.
This anode voltage is applied to the non-inverting input terminal of the operational amp:Lifier A2.
The output voltage from the operational amplifier A2, i.e., Vl + Vxl, is applied to the anode of the diode X2 through the inductor L1.
If a voltage drop across the diode X2 is given by Vx2, and a detection voltage obtained by rectifying the RF
signal Vi by the diode X2 is given by VDET2, the output voltage VO at the output terminal 13 is expressed as:

VDET2 ~ Vl + Vxl - Vx2 (2 That is, the voltage drop Vxl across the diode Xl has an opposite polarity to the voltage drop Vx2 across the diode X2.
When the RF signal Vi is a small signal, the voltage Vl and the resistance of the resistor R3 are set so that a current of the diode X2 becomes equal to that of the diode Xl, and the detection sensitivity is improved. As a result of this setting, if the RF signal Vi is a small signal, the voltage drops Vxl and V~2 become equal to each other as well as their temperature characteristics, and the output voltage VO is given b~v:

VO VDET2 1 13) Therefore, a change in output voltage VO due to a temperature can be removed.
Since the output impedances of the operational amplifiers Al and A2 for respectively outputting the voltage V~ and the voltage (Vl + Vxl) are small, even if currents of the dio~es Xl and X~ change due to a change in temperature, a constant component Vl of the bias voltage - (Vl + Vxl) applied to the diode X2 is not changed.
If the RF signal voltage Vi is increased and the diodes Xl and X2 have different current values, the-voltage drops- V-xI- and Vx2 are-not always equal to each other, and the temperature characteristics of terms Vxl and Vx2 of the output voltage VO given by equation (2) do not always cancel with each other. In this case, the detection voltage,~DET2 beco~es sufficiently large, and a change in output voltage VO due to a change in temperature based on a change in tvXl - Vx2) due to a change in temperature can be ignored.
As described above, an RF detector having desirable temperature stabilized characteristics even when the input signal voltage Vi is small can be obtained.
The embodiment of the present invention has been described with reference to a case wherein the power supply voltage Vcc is positive. However, when the power supply voltage is negative, the connection polarities of the diodes Xl anci X2 can be inverted to be opposite to those illustrated in Fig. 2.

. "

Claims (4)

1. A temperature stabilized RF detector for detecting an RF signal input at an RF input terminal thereof and outputting a detection voltage from a detection voltage output terminal thereof, comprising:
a constant voltage source for outputting a predetermined first voltage at a low output impedance;
a first diode, an electrode of a first polarity of which is connected to said constant voltage source and an electrode of a second polarity of which is connected to a predetermined second voltage terminal through a resistor;
a buffer circuit for outputting a voltage substantially equal to a voltage at said electrode of the second polarity of said first diode at a low output impedance; and a second diode, an electrode of the first polarity of which is connected to said detection voltage output terminal, and an electrode of the second polarity of which is connected to an output terminal of said buffer circuit and said RF input terminal.
2. A temperature stabilized RF detector comprising:
a power supply voltage terminal;
an input terminal for receiving an RF signal;
an output terminal for outputting a detection voltage of the detected RF signal;

a first diode, one terminal of which is connected to said input terminal, and the other terminal of which is connected to said output terminal through a low pass filter;
a constant voltage source, connected to said power supply voltage terminal, for generating a predetermined first constant voltage;
a resistor, one terminal of which is connected to said power supply voltage terminal;
a second diode connected between a constant voltage output terminal of said constant voltage source and the other terminal of said resistor; and a buffer circuit interposed between the node between said resistor and said second diode and said input terminal, wherein connecting directions of said first and second diodes are opposite to each other in a circuit for connecting said output terminal and said constant voltage source.
3. A temperature stabilized RF detector according to claim 2, further comprising a low pass filter, connected to said input terminal and said buffer circuit, for preventing the RF signal from flowing from said input terminal to said buffer circuit.
4. A temperature stabilized RF detector according to claim 2, wherein a resistance of said resistor is set so that, when an RF signal voltage input from said input terminal is small, current values flowing through said first and second diodes are equal to each other, and when the current values of said first and second diodes are equal to each other, temperature characteristics of voltage drops across said first and second diodes are equal to each other.
CA000570975A 1987-07-02 1988-06-30 Temperature stabilized rf detector Expired - Fee Related CA1279110C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP166343/1987 1987-07-02
JP62166343A JP2586495B2 (en) 1987-07-02 1987-07-02 High frequency detection circuit

Publications (1)

Publication Number Publication Date
CA1279110C true CA1279110C (en) 1991-01-15

Family

ID=15829613

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000570975A Expired - Fee Related CA1279110C (en) 1987-07-02 1988-06-30 Temperature stabilized rf detector

Country Status (7)

Country Link
US (1) US4866396A (en)
EP (1) EP0297848B1 (en)
JP (1) JP2586495B2 (en)
KR (1) KR910009088B1 (en)
AU (1) AU599296B2 (en)
CA (1) CA1279110C (en)
DE (1) DE3852725T2 (en)

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JPS63283214A (en) * 1987-05-15 1988-11-21 Nec Corp High frequency detecting circuit
JPH0737052Y2 (en) * 1988-08-29 1995-08-23 株式会社テック Toaster oven
JPH08129033A (en) * 1994-11-01 1996-05-21 Fujitsu Ltd Average value detection device and integrated circuit for detecting average value
JP3154207B2 (en) * 1995-05-31 2001-04-09 ソニー株式会社 Detector and transmitter
EP2386758A1 (en) 2002-10-09 2011-11-16 Abbott Diabetes Care Inc. A method of pumping a predetermined dose of a medical fluid
US7727181B2 (en) 2002-10-09 2010-06-01 Abbott Diabetes Care Inc. Fluid delivery device with autocalibration
US7993108B2 (en) 2002-10-09 2011-08-09 Abbott Diabetes Care Inc. Variable volume, shape memory actuated insulin dispensing pump
US7679407B2 (en) 2003-04-28 2010-03-16 Abbott Diabetes Care Inc. Method and apparatus for providing peak detection circuitry for data communication systems
US8071028B2 (en) * 2003-06-12 2011-12-06 Abbott Diabetes Care Inc. Method and apparatus for providing power management in data communication systems
US7375578B1 (en) * 2004-10-29 2008-05-20 On Semiconductor Radio frequency envelope detector
EP1863559A4 (en) 2005-03-21 2008-07-30 Abbott Diabetes Care Inc Method and system for providing integrated medication infusion and analyte monitoring system
US7768408B2 (en) 2005-05-17 2010-08-03 Abbott Diabetes Care Inc. Method and system for providing data management in data monitoring system
US7620437B2 (en) 2005-06-03 2009-11-17 Abbott Diabetes Care Inc. Method and apparatus for providing rechargeable power in data monitoring and management systems
US7756561B2 (en) 2005-09-30 2010-07-13 Abbott Diabetes Care Inc. Method and apparatus for providing rechargeable power in data monitoring and management systems
US7583190B2 (en) 2005-10-31 2009-09-01 Abbott Diabetes Care Inc. Method and apparatus for providing data communication in data monitoring and management systems
US8344966B2 (en) 2006-01-31 2013-01-01 Abbott Diabetes Care Inc. Method and system for providing a fault tolerant display unit in an electronic device
US8579853B2 (en) 2006-10-31 2013-11-12 Abbott Diabetes Care Inc. Infusion devices and methods
US8560082B2 (en) 2009-01-30 2013-10-15 Abbott Diabetes Care Inc. Computerized determination of insulin pump therapy parameters using real time and retrospective data processing
US8467972B2 (en) 2009-04-28 2013-06-18 Abbott Diabetes Care Inc. Closed loop blood glucose control algorithm analysis
EP3173014B1 (en) 2009-07-23 2021-08-18 Abbott Diabetes Care, Inc. Real time management of data relating to physiological control of glucose levels
US10230336B2 (en) 2016-11-22 2019-03-12 Infineon Technologies Ag RF power detector circuits

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JPS5619211A (en) * 1979-07-25 1981-02-23 Mitsubishi Electric Corp Wave detecting circuit
JPS5619209A (en) * 1979-07-25 1981-02-23 Mitsubishi Electric Corp Wave detecting circuit
JPS5619210A (en) * 1979-07-25 1981-02-23 Mitsubishi Electric Corp Wave detecting circuit
US4319196A (en) * 1980-03-17 1982-03-09 Westinghouse Electric Corp. Temperature compensated wide dynamic range linear envelope detector
JPS5737905A (en) * 1980-08-14 1982-03-02 Toshiba Corp Envelope curve wave detecting circuit
JPS5899009A (en) * 1981-12-09 1983-06-13 Toshiba Corp Amplitude detector
US4523155A (en) * 1983-05-04 1985-06-11 Motorola, Inc. Temperature compensated automatic output control circuitry for RF signal power amplifiers with wide dynamic range

Also Published As

Publication number Publication date
AU599296B2 (en) 1990-07-12
JP2586495B2 (en) 1997-02-26
EP0297848A2 (en) 1989-01-04
JPS6410704A (en) 1989-01-13
KR910009088B1 (en) 1991-10-28
KR890003132A (en) 1989-04-13
US4866396A (en) 1989-09-12
DE3852725T2 (en) 1995-05-18
EP0297848B1 (en) 1995-01-11
EP0297848A3 (en) 1990-05-16
AU1867588A (en) 1989-01-05
DE3852725D1 (en) 1995-02-23

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