CA1304171C - Overcurrent protection circuit for semiconductor device - Google Patents
Overcurrent protection circuit for semiconductor deviceInfo
- Publication number
- CA1304171C CA1304171C CA000572725A CA572725A CA1304171C CA 1304171 C CA1304171 C CA 1304171C CA 000572725 A CA000572725 A CA 000572725A CA 572725 A CA572725 A CA 572725A CA 1304171 C CA1304171 C CA 1304171C
- Authority
- CA
- Canada
- Prior art keywords
- superconducting material
- semiconductor chip
- package
- current value
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
- H02H9/023—Current limitation using superconducting elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49888—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing superconducting material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/825—Apparatus per se, device per se, or process of making or operating same
- Y10S505/917—Mechanically manufacturing superconductor
- Y10S505/922—Making josephson junction device
Abstract
ABSTRACT
A semiconductor device in which at least a part of each of the current flow paths extending from the electrode pads of the semiconductor chip to the outer terminals of the semiconductor package is made of superconducting material. During operation, when an overcurrent applied to a lead pin exceeds the critical current of the superconducting material, the resistance is increased from zero, and the semiconductor chip is thereby protected from damage. The superconducting material may also be configured between the outer terminals of the semiconductor package so that a potential difference can be measured. Also, a magnetic field may be applied to the superconducting material so that the critical current value can be set.
A semiconductor device in which at least a part of each of the current flow paths extending from the electrode pads of the semiconductor chip to the outer terminals of the semiconductor package is made of superconducting material. During operation, when an overcurrent applied to a lead pin exceeds the critical current of the superconducting material, the resistance is increased from zero, and the semiconductor chip is thereby protected from damage. The superconducting material may also be configured between the outer terminals of the semiconductor package so that a potential difference can be measured. Also, a magnetic field may be applied to the superconducting material so that the critical current value can be set.
Description
13 01~7~l OVERCURRENT PROTECTION CIRCUIl' FOR
SEMICOND~CTO~ DEVICE
1 BACKGROUND OF THE _ ENrrIoN
1. Field of the Invention The present invention relates to a semiconductor device which is formed by sealing a semiconductor chip in a package of resin, ceramic or the like for shipment. More particularly, the present invention relates to a semiconductor device which is provided with a circuit for protecting the semiconductor chip from overcurrent.
1(~ BRIEF DESCRIPTION OF THE DRAWINGS
Fig. 1 is an explanatory diagram of a conventional overcurrent protection circuit for a semiconductor device;
Fig. 2 is a sectional view showing essential parts of a semiconductor device according to a first embodiment of the present invention;
Figs. 3(a)-3(d), 4~a) and 4~b) are external views of examples of a package to which the technical features of the first embodiment are applied;
Fig. 5 is a perspective view, with parts cut away, showing essential parts of a semiconductor device according to a second embodiment of the present invention;
Fig. 6 is a perspective view, with parts cut away, showing essential parts of a semiconductor device according to a third embodiment of the present invention; and ~1 30~a~7~
l Figs. 7(a), 7(b) and 8 are external views of examples of a package to which the technical features of the third embodiment of the present invention are applied.
SEMICOND~CTO~ DEVICE
1 BACKGROUND OF THE _ ENrrIoN
1. Field of the Invention The present invention relates to a semiconductor device which is formed by sealing a semiconductor chip in a package of resin, ceramic or the like for shipment. More particularly, the present invention relates to a semiconductor device which is provided with a circuit for protecting the semiconductor chip from overcurrent.
1(~ BRIEF DESCRIPTION OF THE DRAWINGS
Fig. 1 is an explanatory diagram of a conventional overcurrent protection circuit for a semiconductor device;
Fig. 2 is a sectional view showing essential parts of a semiconductor device according to a first embodiment of the present invention;
Figs. 3(a)-3(d), 4~a) and 4~b) are external views of examples of a package to which the technical features of the first embodiment are applied;
Fig. 5 is a perspective view, with parts cut away, showing essential parts of a semiconductor device according to a second embodiment of the present invention;
Fig. 6 is a perspective view, with parts cut away, showing essential parts of a semiconductor device according to a third embodiment of the present invention; and ~1 30~a~7~
l Figs. 7(a), 7(b) and 8 are external views of examples of a package to which the technical features of the third embodiment of the present invention are applied.
2. Description of the Prior Art An example of such a circuit in the prior art i5 shown in FIG. 1. As shown/ a protective circuit comprising diodes Dl and D2 and a resistor R
is connected between a lead pin 1 provided outside lo the package and the semiconductor chip 2 inside the package. When a negative overvoltage is applied to the lead pin l, an overcurrent caused by the overvoltaqe is allowed to flow through the diode Dl from the earth side so that the semiconductor chip 2 will never be adversely affected. When, on the other hand, a positive voltage is applied to the lead pin l, the resultant overcurrent is allowed to flow through the diode D2 to the power source V so that in this case the semiconductor chip 2 also will never be adversely affected~
However, the above-described conventional semiconductor device suffers from the following problems. Namely, since it is necessary to provide one resistor and two diodes, the circuit is ~5 relatively intricate, and the number of components is unnecessarily large. A1~Q~ the high ~requency characteristlc of the device is lowered by the capacitance of the diodes.
Another example of protecting means for protecting a semiconductor chip from overcurrent comprises a current monitoring circuit provided between an external terminal to which overcurrent may be applied and a signal source (external circuit) for monitoring overcurrent. However, since in this method it is necessary to connect a resistor so as to cause a voltage drop betwe~n the external 1304~
1 terminal and the signal source, it is rather difficult to apply a sufficiently large signal ~o the semiconductor chip through the external terminal during ordinary operation.
SUMMARY OF THE INVENTION
Accordingly, an object of this invention is to provide a semiconductor device which is so designed that it is simple in arrangement and its semiconductor chip is protected from overcurrent with the high frequency characteristic remaining unchanged.
Another object of this invention is to provide a semiconductor device which is so designed that it is simple in arrangement, its semiconductor chip is protected from overcurrent, and a sufficiently large signal can be applied to the semiconductor chip during ordinary operation Still another object of this invention is to provide a semiconductor device which i5 SO
designed that it i5 simple in arrangement, its semiconductor chip is protected from overcurrent with the high frequency characteristic remaining unchanged, and the allow~ble value of the overcurrent can be set to a desired value.
The foregoing objects of this invention have been achieved by the provision of a semiconductor device in which at least a part of each of the current flow paths extended from the electrode pads of the semiconductor chi-p to the outer terminals is made of superconducting material. Therefore, in~the semiconductor device of the invention, when an overcurrent applied to a lead pin exceeds the criticaI current value of the superconducting material, the resistance is increased, thus protecting the semiconductor chip from damage.
. J' ~
~ 30~
1 Another feature of the semiconductor device according to the present invention resides in that at least a part of an electric current path which extends from at least one of the plurality of electrode pads to at least one of the plurality of external terminals is made of superconducting material, wherein one end of the part of the electric current path which is connected to the one electrode pad is connected to another one of the external terminals. Therefore, in the semiconductor device of the invention, when an overcurrent applied to the external terminaI exceeds the critical current value of the superconducting material, the resistance is raised from zero, thus providing a potential difference between the monitoring external terminals. The overcurrent thus can be monitored by detection of the potential difference between the external terminals.
According to another feature of the semiconductor device of the present invention, at least a part of each of the electric current paths extended from the electrode padt; of the semiconductor chip to the external terminals exposed outside the package is made of superconducting material, and~magnetic means is provided for application of a magnetic field to that part of each of the current paths. Therefore, in the semiconductor device of the invention, when an overcurrent applied to any one of the external terminals exceeds the~crltical current value of the superconducting material, the resistance i5 raised from zero, thus protecting the semiconductor chip from damage. ~Also, the critical current value can be set by application of the magnetic field formed by the ma~netic means.
:
4a 1 Accordingly in ons aspect the invention provides a semiconductor device, compcising a semiconductor . package; a semiconductor chip, having electrode pads, disposed inside of said package; outer terminal disposed on the outside of said package; and current flow paths electrically connecting said electrode pads with said outer terminals, at least portion of said current flow paths being made of a superconducting material maintained at a temperature lower than the critical temperature of said superconducting material and having a critical current value that is lower than the maximum allowable current value of said semiconductor chip so that the electrical resistance value of said superconducting material will change from zero to a finite value before the maximum allowable current value of said semiconductor chip is reached so as to cause a voltage drop across said superconducting material thus reducing the power dissipated by said semiconductor chip.
In a further aspect the invention provides a ~0 semiconductor device, comprising a semiconductor package;
a semiconductor chip having electrode pads, disposed inside of said package; signal terminals disposed on the outside of said package; monitor terminals disposed on the outside of said package; and current flow paths, each electrically connecting one of said electrode pads with one of said signal terminals, at least a portion o~ said current flow paths being made oE a superconducting material maintained at a temperature lower than the critical temperature of said superconducting material and having a critical current value that is lower than the maximum allowable current value of said semiconductor chip ~3~ 17~
4b 1 so that the electrical resistance value of said superconducting material will change from zero to a finite value before the maximum allowable current value of said semiconductor chip is reached so as to cause a voltage drop across said superconducting material thus reducing the power dissipated by said semiconductor chip, an end of said portion of said current flow path which is connected to one of said electrode pads also being electrically connected to one of said monitoring terminals so as to allow monitoring of a potential difference between one of said signal terminals and a corresponding one of said monitoring terminals when the critical current value of said super conductor material is exceeded.
.. . , ... ... . ~ . .. .... .. . .... . .. . . .. . . . .. . . _ ... . .. . . .
~.3~7~L
1 DETAILED DESCRIPTION OF THE PRE~ERRED EMBODIMENTS
The preferred embodiments of this invention will be described below with reference to ~IGS~ 2 through 8.
FIG~ 2 is a sectional view showing a part of a semiconductor device according to a first embodiment oE the invention. As shown in FIGo 2, a semiconductor chip 12 is die-mounted in the cavity of a package base 11, and inner leads 13a and 13b lo are formed in the periphery of the package base 11. Lead pins 14 electrically connected to the inner leads 13b are fixedly provided outside the package base 11. The inner leads 13a are connected through bonding wires 15 to the semiconductor chip 12. The package base having the above-described components is covered with a cap 16 securedly fixed thereto.
The semiconductor device of the invent~on further comprises conducting member 17 made of superconducting material which are fixedly provided between the inner leads 13a and 13b. A number of kinds of superconducting material are available for this purpose, as are a variety of semiconductor packages also avaiiable. The dimensions of the conducting member 17 are so determined that the overcurrent flowing to the semiconductor chip exceeds the cr~itical current value of the conducting member immediately before exceeding the allowable value for the semiconductor chip.
13~4~L7~
1 The operation of the semiconductor device thus constructed now will be described.
The semiconductor device must be used at temperatures below the inherent critical temperature of the superconductin~ material of the conductin~
members 17. When, under this condition, a signal current is applied through the lead pin 14, the conducting member 17 is maintained superconductive, and its resistance is zero. ~owever, when an lo overcurrent inputted through the lead pin 14 exceeds the critical current value of the superconducting material of the superconducting member 17, the resistance oE the conducting member 17 is raised to a finite value from zero so that the semiconductor chip 12 is protected from the problems which would occur should the overcurrent flow into the semiconductor chip as it is. If the semiconductor device is so designed that after the resistance reaches the Einite value the temperature of the conducting member 17 is raised by heat generated, thus exceeding the critiaal temperature of the superconducting material, then the overcurrent preventing function will become even more effective.
FIGS. 3 and 4 are external views of semiconductor devices to which the technical arrangement of FIG. 2 i5 applicable.
In the package shown in FIG5. 3(a) and 3(b), a semiconductor chip is sealed under a cap 21. In the packa~e, lead pins 22 ar~ made of superconducting material as shown in FIG. 2:
however, conducting members of superconducting material also may be arranged inside the packaqe, or may be provided along electrical paths to the semiconductor chip.
~L~O~
1 In a package as shown in FIGS. 3~c~ and 3(d), on the other hand, a semiconductor is sealed under a cap 23, and lead pins 24 also are made of superconduc~ing material as in FIG. 2. ~owever, these conducting members of superconducting material also may be arranged inside the package, or may be provided along electrical paths to the semiconductor chip as in FIGS. 3(a) and 3(b).
FIG. 4(a) shows a so-called "LCC" ~leadless chip rarrier) type package, in which electrode material members 32 are fixed to the outside of a package base 31 made of ceramic. FIG. 4(b), on the other hand, shows a so-called "DIP" (dual-in-line package), in which outer leads 34 are extended from th'e side wall of a package 33 made of resin. In these packages, the conducting members of superconducting material a1SQ can be arranged in the same manner as those in the packages shown in FIGS.
2 and 3.
For each package so arranged, when an overcurxent applied to the lead pin exceeds the critical current value o~ the conducting member of superconducting material, the resistance o~ the latter is increased from zero, thus protectiny ~he semiconductor chip inside the device from damage.
Thus, the semiconductor device of the invention, though simple in construction, can protect the semiconductor chip from overcurrent with the high frequency characteristic remaining unchanged.
~IG. 5 is a perspective view, with parts cut away, showing a semiconductor device 40 according ~o second embodiment of the invention. As shown in FIG. 5, a semiconductor chip 42 is die-mounted in the cavity of a package base 41, and inner leads 43a and 43b are formed in the periphery 13~4~7~L
1 of the cavity of the package base 41. Monitoring external terminals 44a and 44b electrically connected to the respective inner leads 43a and 43b and a plurality of external terminals 44 connect2d to a plurality of inner Ieads 43 are fixedly provided on the outside o the package base 41. The inner leads 43a and 43b are connected through bonding wires 45 to the semiconductor chip, The package base having those components is covered with a cap 46 fixedly secured thereto.
In the semiconductor device of FIG. 5, the inner lead 43a connected to the external terminal 44a used for receiving an input signal and for moni~oring is connected through a conducting member 47 of superconducting materiaL to the inner lead 43b connected to the external terminal 44b which is used only for monitoring. The dimensions of the conducting member 47 are so determined that an overcurrent flowing to the semiconductor chip exceeds the critical current value of the superconducting material immediately before exceeding the allowable value for the semiconduct.or chip. A monitoring device (such as a voltmeter) 48 for monitoring a potential difference is connected to the external terminals 44a and 44b.
The operation of the semiconductor device thus arranged now will be described.
The semiconductor device of FIGo 5 must be used at temperatures below the inherent critical temperature of the superconducting material of the conductiny member 47. When, under this condition, an ordinary signal current or a current from the power source is applied to the semiconductor device through the external terminal 44a u~ed for receivlng an input signal and for monitoring (hereinafter 1.30417~
1 referred to as "a first external terminal 44a", when applicable), the conducting member 47 is maintained superconductive, and its resistance is zero~
However, when an overcurrent applied through the S external terminal 44a exceed5 the critical current value of the superconducting material o the conducting member 47, the resistance of the conducting member 47 is raised to a certain finite value from zero. As a result, a potential difference is developed across the conducting member 47 by the overcu~rrent, and this potential differenc~
is applied across the~external terminals 44a and 44b to the monitoring means 48, where it is detected.
If the semiconductor device i5 50 designed lS that after the resistance reaches the certain fir.ite value from zero the temperat~re of the conducting member 47 is raised~by heat generated, thus exceeding the criti;cal temperature o~ the superconducting material, then the above-described overcurrent monitoring operation will be achieved even more ef~ectively. Moreover, upon detection o the overcurrent in this way, the application of the supply voltage is suspended immediately, or a signal source circuit (not shown) is checked for trouble.
Thus, the trouble can~be detected prior to failure, and the semiconductor device can be protectedO
The techni~cal concept of the second embodiment is also applic?ble to semiconductor devices packaged as ~shown in FIGs. 3 and 4.
In the ~semiconductor device of the second embodiment, when~an overcurrent applied to the lead pin exceeds the crit~ical current value of the conducting member Oe superconducting material, the resistance of the latter is increased from zero so that a potential difference is provided between the , 1 pair of monitoring external terminals. Thus, the semiconductor device of the second embodiment of the invention, though simple in construction, can monitor the overcurrent without adversely affecting the signal input or power input under ordinary operating conditions.
FIG. 6 is a perspective view, with parts cut away, showing a semiconductor device llQ
according to a third embodiment of the invention.
As shown in FIG. 6, a semicondu~tor chip 112 is die~
mounted in the cavity of a package base lll, and inner leads 113a and lead pads 113b are for~ed on an inner lead forming surface 113 provided in the periphery of the package base 111. External lS terminals 114 are fixedly provided on th~ outer walls of the package base 111, and are connected electrical ~ to the respective inner leads 113a.
The lead pads 113b are connected through bonding wires 115 to the semiconductor chip 112. The package base is covered with a cap 116 which is secured thereto through a sealing member ll9~
The semiconductor device of the embodiment of FIG. 6 fu~ther comprises conducting members 117 of superconducting material connected between the inner leads 113a and the lead pads 113b, respectively. The dimensions of the conducting member 117 are so determined that an overcurrent flowing to the semiconductor chip exceeds the critical current value of the superconducting material immediately before exceeding the allowable value of the semiconductor chip. Magnetic elements 118 also are provided adjacent to the conducting members 117 so that magnetic fields may be applied to the respective conducting mem~ers.
~3~
1 The operation of the semiconductor device thus arranged now will be described.
The semiconductor device of FIG. 6 must be used at temperatures below the inherent critical temperature of the superconducting material of the conducting member 117. When, under this condition, an ord;nary signal current is applied to the dev;ce through an external terminal 114, the conducting member 117 is maintained superconductive, and its resistance is zero. ~owever, when an overcurrent applied through the external terminal 114 exceeds the critical current value of the superconducting material of the conducting member 117, the resistance of the conducting member 117 i5 set to a certain value larger than zero so that the semiconductor chip 112 is protected from the possibility that the overcurrent will flow into the semiconductor chip as it is. If the semiconductox device is so designed that after the resistance reaches the aforementioned certain.value the temperature of the conducting member 117 is raised by heat generated, thu~ exceeding the critical temperature of the superconducting material, then the overcurrent preventing function will become even more effective.
In the embodiment of FIG. 6, the magnetic elements 118 are:provided so that magneti~ fields may be generated to set the above-described critical current value. Namely, the critical current value can be adjusted for every external terminal by deter~ining the cr;tical current value or adjusting the critical current value separately accordi~g to the kind of semiconductor chip die-mounted in ~he package. The critical current value also may be adjusted according to the use or operating condition ~3~L7~
1 of the semiconductor device. Furthermore, in the embodiment of FIG. 6I the lines of magnetic force are formed only in the closed loops including the magnetic elements 118 and the conducting members of superconducting material, and therefore, the magnetic fields do not reach the semiconductor chip. That is, the,electrical characteristic of the semiconductor chip will never be adversely affected by the provision of the magnetic elements 118.
The third embodiment is also applicable to semiconductor devices packaged as shown in ~i95. 3 and 4. For example, when the third embodiment is applied to a semiconductor device as shown in Figs.
3(a) and 3(b), inner~leads (not shown) connectçd to the lead pins 22 are~made of superconductive materials and a magnet'ic material 125 is provided on the device as shown in Figs. 7~a) and 7~b). Also, when the third embodiment is applied to a semiconductor device as.shown in Figs. 3(c) and 3(d), the superconductive material,also is provided on a path between the lead pin 24 and the semiconductor chip 23, but a magnetic material is further provided in the semiconductor device as shown in FIG. 6.
In addition, when the third embodiment is applied to a semiconductor device package as shown in Fig. 4(a~, inner leads (not shown) made of superconductive materials are provided and a magnetic means 135 for adjusting the critical current is fixed on:the device as shown in Fig. 8.
Thus, in the device shown in Fig. 8, the superconductive materials are provided as in the devices shown in Figs. 6 and 7.
While a few embodiments of the invention have been described in detail above, it is to be 1304~7~
1 particularly understood that the invention is not limited thereto or thereby and can be modiied or changed in various manners.
For example, of all the external terminals, only those which may receive overcurrents may be provided with conducting members of superconducting material. Alternatively, conducting members of superconducting material may be provided for all of the external terminals, and the magnetic means may be provided for some of the external terminals.
Furthermore, the package shown in ~IG. 6 may be so modified that the sealing member is made of superconducting material, and the sealing member receives current to form a magnetic field. In addition, in the package of FIG. 6, the magnetic elements may be replaced by chip coils. Any of a variety of other semiconductor packages also are available.
As was described in detail above, when an overcurrent applied to an external terminal o~ the semiconductor device of the present invention exceeds the critical current value of the superconducting material, a resistance is provided, thus protecting the semiconductor chip inside the device from damage. Furthermore, in the semiconductor device of the invention the critical current value can be ad~usted by the use of magnetie fields as described. Therefore, the semiconductor devic~ of the invention, though simple in construction, can protect the semiconductor chip from overcurrent with the high frequency characteristic remaining unchanged, and also can set the overcurrent allowable value to a desired value.
These and other beneficial fea~ures are believed to be included within ~he scope of the invention as defined by the following claimsO
is connected between a lead pin 1 provided outside lo the package and the semiconductor chip 2 inside the package. When a negative overvoltage is applied to the lead pin l, an overcurrent caused by the overvoltaqe is allowed to flow through the diode Dl from the earth side so that the semiconductor chip 2 will never be adversely affected. When, on the other hand, a positive voltage is applied to the lead pin l, the resultant overcurrent is allowed to flow through the diode D2 to the power source V so that in this case the semiconductor chip 2 also will never be adversely affected~
However, the above-described conventional semiconductor device suffers from the following problems. Namely, since it is necessary to provide one resistor and two diodes, the circuit is ~5 relatively intricate, and the number of components is unnecessarily large. A1~Q~ the high ~requency characteristlc of the device is lowered by the capacitance of the diodes.
Another example of protecting means for protecting a semiconductor chip from overcurrent comprises a current monitoring circuit provided between an external terminal to which overcurrent may be applied and a signal source (external circuit) for monitoring overcurrent. However, since in this method it is necessary to connect a resistor so as to cause a voltage drop betwe~n the external 1304~
1 terminal and the signal source, it is rather difficult to apply a sufficiently large signal ~o the semiconductor chip through the external terminal during ordinary operation.
SUMMARY OF THE INVENTION
Accordingly, an object of this invention is to provide a semiconductor device which is so designed that it is simple in arrangement and its semiconductor chip is protected from overcurrent with the high frequency characteristic remaining unchanged.
Another object of this invention is to provide a semiconductor device which is so designed that it is simple in arrangement, its semiconductor chip is protected from overcurrent, and a sufficiently large signal can be applied to the semiconductor chip during ordinary operation Still another object of this invention is to provide a semiconductor device which i5 SO
designed that it i5 simple in arrangement, its semiconductor chip is protected from overcurrent with the high frequency characteristic remaining unchanged, and the allow~ble value of the overcurrent can be set to a desired value.
The foregoing objects of this invention have been achieved by the provision of a semiconductor device in which at least a part of each of the current flow paths extended from the electrode pads of the semiconductor chi-p to the outer terminals is made of superconducting material. Therefore, in~the semiconductor device of the invention, when an overcurrent applied to a lead pin exceeds the criticaI current value of the superconducting material, the resistance is increased, thus protecting the semiconductor chip from damage.
. J' ~
~ 30~
1 Another feature of the semiconductor device according to the present invention resides in that at least a part of an electric current path which extends from at least one of the plurality of electrode pads to at least one of the plurality of external terminals is made of superconducting material, wherein one end of the part of the electric current path which is connected to the one electrode pad is connected to another one of the external terminals. Therefore, in the semiconductor device of the invention, when an overcurrent applied to the external terminaI exceeds the critical current value of the superconducting material, the resistance is raised from zero, thus providing a potential difference between the monitoring external terminals. The overcurrent thus can be monitored by detection of the potential difference between the external terminals.
According to another feature of the semiconductor device of the present invention, at least a part of each of the electric current paths extended from the electrode padt; of the semiconductor chip to the external terminals exposed outside the package is made of superconducting material, and~magnetic means is provided for application of a magnetic field to that part of each of the current paths. Therefore, in the semiconductor device of the invention, when an overcurrent applied to any one of the external terminals exceeds the~crltical current value of the superconducting material, the resistance i5 raised from zero, thus protecting the semiconductor chip from damage. ~Also, the critical current value can be set by application of the magnetic field formed by the ma~netic means.
:
4a 1 Accordingly in ons aspect the invention provides a semiconductor device, compcising a semiconductor . package; a semiconductor chip, having electrode pads, disposed inside of said package; outer terminal disposed on the outside of said package; and current flow paths electrically connecting said electrode pads with said outer terminals, at least portion of said current flow paths being made of a superconducting material maintained at a temperature lower than the critical temperature of said superconducting material and having a critical current value that is lower than the maximum allowable current value of said semiconductor chip so that the electrical resistance value of said superconducting material will change from zero to a finite value before the maximum allowable current value of said semiconductor chip is reached so as to cause a voltage drop across said superconducting material thus reducing the power dissipated by said semiconductor chip.
In a further aspect the invention provides a ~0 semiconductor device, comprising a semiconductor package;
a semiconductor chip having electrode pads, disposed inside of said package; signal terminals disposed on the outside of said package; monitor terminals disposed on the outside of said package; and current flow paths, each electrically connecting one of said electrode pads with one of said signal terminals, at least a portion o~ said current flow paths being made oE a superconducting material maintained at a temperature lower than the critical temperature of said superconducting material and having a critical current value that is lower than the maximum allowable current value of said semiconductor chip ~3~ 17~
4b 1 so that the electrical resistance value of said superconducting material will change from zero to a finite value before the maximum allowable current value of said semiconductor chip is reached so as to cause a voltage drop across said superconducting material thus reducing the power dissipated by said semiconductor chip, an end of said portion of said current flow path which is connected to one of said electrode pads also being electrically connected to one of said monitoring terminals so as to allow monitoring of a potential difference between one of said signal terminals and a corresponding one of said monitoring terminals when the critical current value of said super conductor material is exceeded.
.. . , ... ... . ~ . .. .... .. . .... . .. . . .. . . . .. . . _ ... . .. . . .
~.3~7~L
1 DETAILED DESCRIPTION OF THE PRE~ERRED EMBODIMENTS
The preferred embodiments of this invention will be described below with reference to ~IGS~ 2 through 8.
FIG~ 2 is a sectional view showing a part of a semiconductor device according to a first embodiment oE the invention. As shown in FIGo 2, a semiconductor chip 12 is die-mounted in the cavity of a package base 11, and inner leads 13a and 13b lo are formed in the periphery of the package base 11. Lead pins 14 electrically connected to the inner leads 13b are fixedly provided outside the package base 11. The inner leads 13a are connected through bonding wires 15 to the semiconductor chip 12. The package base having the above-described components is covered with a cap 16 securedly fixed thereto.
The semiconductor device of the invent~on further comprises conducting member 17 made of superconducting material which are fixedly provided between the inner leads 13a and 13b. A number of kinds of superconducting material are available for this purpose, as are a variety of semiconductor packages also avaiiable. The dimensions of the conducting member 17 are so determined that the overcurrent flowing to the semiconductor chip exceeds the cr~itical current value of the conducting member immediately before exceeding the allowable value for the semiconductor chip.
13~4~L7~
1 The operation of the semiconductor device thus constructed now will be described.
The semiconductor device must be used at temperatures below the inherent critical temperature of the superconductin~ material of the conductin~
members 17. When, under this condition, a signal current is applied through the lead pin 14, the conducting member 17 is maintained superconductive, and its resistance is zero. ~owever, when an lo overcurrent inputted through the lead pin 14 exceeds the critical current value of the superconducting material of the superconducting member 17, the resistance oE the conducting member 17 is raised to a finite value from zero so that the semiconductor chip 12 is protected from the problems which would occur should the overcurrent flow into the semiconductor chip as it is. If the semiconductor device is so designed that after the resistance reaches the Einite value the temperature of the conducting member 17 is raised by heat generated, thus exceeding the critiaal temperature of the superconducting material, then the overcurrent preventing function will become even more effective.
FIGS. 3 and 4 are external views of semiconductor devices to which the technical arrangement of FIG. 2 i5 applicable.
In the package shown in FIG5. 3(a) and 3(b), a semiconductor chip is sealed under a cap 21. In the packa~e, lead pins 22 ar~ made of superconducting material as shown in FIG. 2:
however, conducting members of superconducting material also may be arranged inside the packaqe, or may be provided along electrical paths to the semiconductor chip.
~L~O~
1 In a package as shown in FIGS. 3~c~ and 3(d), on the other hand, a semiconductor is sealed under a cap 23, and lead pins 24 also are made of superconduc~ing material as in FIG. 2. ~owever, these conducting members of superconducting material also may be arranged inside the package, or may be provided along electrical paths to the semiconductor chip as in FIGS. 3(a) and 3(b).
FIG. 4(a) shows a so-called "LCC" ~leadless chip rarrier) type package, in which electrode material members 32 are fixed to the outside of a package base 31 made of ceramic. FIG. 4(b), on the other hand, shows a so-called "DIP" (dual-in-line package), in which outer leads 34 are extended from th'e side wall of a package 33 made of resin. In these packages, the conducting members of superconducting material a1SQ can be arranged in the same manner as those in the packages shown in FIGS.
2 and 3.
For each package so arranged, when an overcurxent applied to the lead pin exceeds the critical current value o~ the conducting member of superconducting material, the resistance o~ the latter is increased from zero, thus protectiny ~he semiconductor chip inside the device from damage.
Thus, the semiconductor device of the invention, though simple in construction, can protect the semiconductor chip from overcurrent with the high frequency characteristic remaining unchanged.
~IG. 5 is a perspective view, with parts cut away, showing a semiconductor device 40 according ~o second embodiment of the invention. As shown in FIG. 5, a semiconductor chip 42 is die-mounted in the cavity of a package base 41, and inner leads 43a and 43b are formed in the periphery 13~4~7~L
1 of the cavity of the package base 41. Monitoring external terminals 44a and 44b electrically connected to the respective inner leads 43a and 43b and a plurality of external terminals 44 connect2d to a plurality of inner Ieads 43 are fixedly provided on the outside o the package base 41. The inner leads 43a and 43b are connected through bonding wires 45 to the semiconductor chip, The package base having those components is covered with a cap 46 fixedly secured thereto.
In the semiconductor device of FIG. 5, the inner lead 43a connected to the external terminal 44a used for receiving an input signal and for moni~oring is connected through a conducting member 47 of superconducting materiaL to the inner lead 43b connected to the external terminal 44b which is used only for monitoring. The dimensions of the conducting member 47 are so determined that an overcurrent flowing to the semiconductor chip exceeds the critical current value of the superconducting material immediately before exceeding the allowable value for the semiconduct.or chip. A monitoring device (such as a voltmeter) 48 for monitoring a potential difference is connected to the external terminals 44a and 44b.
The operation of the semiconductor device thus arranged now will be described.
The semiconductor device of FIGo 5 must be used at temperatures below the inherent critical temperature of the superconducting material of the conductiny member 47. When, under this condition, an ordinary signal current or a current from the power source is applied to the semiconductor device through the external terminal 44a u~ed for receivlng an input signal and for monitoring (hereinafter 1.30417~
1 referred to as "a first external terminal 44a", when applicable), the conducting member 47 is maintained superconductive, and its resistance is zero~
However, when an overcurrent applied through the S external terminal 44a exceed5 the critical current value of the superconducting material o the conducting member 47, the resistance of the conducting member 47 is raised to a certain finite value from zero. As a result, a potential difference is developed across the conducting member 47 by the overcu~rrent, and this potential differenc~
is applied across the~external terminals 44a and 44b to the monitoring means 48, where it is detected.
If the semiconductor device i5 50 designed lS that after the resistance reaches the certain fir.ite value from zero the temperat~re of the conducting member 47 is raised~by heat generated, thus exceeding the criti;cal temperature o~ the superconducting material, then the above-described overcurrent monitoring operation will be achieved even more ef~ectively. Moreover, upon detection o the overcurrent in this way, the application of the supply voltage is suspended immediately, or a signal source circuit (not shown) is checked for trouble.
Thus, the trouble can~be detected prior to failure, and the semiconductor device can be protectedO
The techni~cal concept of the second embodiment is also applic?ble to semiconductor devices packaged as ~shown in FIGs. 3 and 4.
In the ~semiconductor device of the second embodiment, when~an overcurrent applied to the lead pin exceeds the crit~ical current value of the conducting member Oe superconducting material, the resistance of the latter is increased from zero so that a potential difference is provided between the , 1 pair of monitoring external terminals. Thus, the semiconductor device of the second embodiment of the invention, though simple in construction, can monitor the overcurrent without adversely affecting the signal input or power input under ordinary operating conditions.
FIG. 6 is a perspective view, with parts cut away, showing a semiconductor device llQ
according to a third embodiment of the invention.
As shown in FIG. 6, a semicondu~tor chip 112 is die~
mounted in the cavity of a package base lll, and inner leads 113a and lead pads 113b are for~ed on an inner lead forming surface 113 provided in the periphery of the package base 111. External lS terminals 114 are fixedly provided on th~ outer walls of the package base 111, and are connected electrical ~ to the respective inner leads 113a.
The lead pads 113b are connected through bonding wires 115 to the semiconductor chip 112. The package base is covered with a cap 116 which is secured thereto through a sealing member ll9~
The semiconductor device of the embodiment of FIG. 6 fu~ther comprises conducting members 117 of superconducting material connected between the inner leads 113a and the lead pads 113b, respectively. The dimensions of the conducting member 117 are so determined that an overcurrent flowing to the semiconductor chip exceeds the critical current value of the superconducting material immediately before exceeding the allowable value of the semiconductor chip. Magnetic elements 118 also are provided adjacent to the conducting members 117 so that magnetic fields may be applied to the respective conducting mem~ers.
~3~
1 The operation of the semiconductor device thus arranged now will be described.
The semiconductor device of FIG. 6 must be used at temperatures below the inherent critical temperature of the superconducting material of the conducting member 117. When, under this condition, an ord;nary signal current is applied to the dev;ce through an external terminal 114, the conducting member 117 is maintained superconductive, and its resistance is zero. ~owever, when an overcurrent applied through the external terminal 114 exceeds the critical current value of the superconducting material of the conducting member 117, the resistance of the conducting member 117 i5 set to a certain value larger than zero so that the semiconductor chip 112 is protected from the possibility that the overcurrent will flow into the semiconductor chip as it is. If the semiconductox device is so designed that after the resistance reaches the aforementioned certain.value the temperature of the conducting member 117 is raised by heat generated, thu~ exceeding the critical temperature of the superconducting material, then the overcurrent preventing function will become even more effective.
In the embodiment of FIG. 6, the magnetic elements 118 are:provided so that magneti~ fields may be generated to set the above-described critical current value. Namely, the critical current value can be adjusted for every external terminal by deter~ining the cr;tical current value or adjusting the critical current value separately accordi~g to the kind of semiconductor chip die-mounted in ~he package. The critical current value also may be adjusted according to the use or operating condition ~3~L7~
1 of the semiconductor device. Furthermore, in the embodiment of FIG. 6I the lines of magnetic force are formed only in the closed loops including the magnetic elements 118 and the conducting members of superconducting material, and therefore, the magnetic fields do not reach the semiconductor chip. That is, the,electrical characteristic of the semiconductor chip will never be adversely affected by the provision of the magnetic elements 118.
The third embodiment is also applicable to semiconductor devices packaged as shown in ~i95. 3 and 4. For example, when the third embodiment is applied to a semiconductor device as shown in Figs.
3(a) and 3(b), inner~leads (not shown) connectçd to the lead pins 22 are~made of superconductive materials and a magnet'ic material 125 is provided on the device as shown in Figs. 7~a) and 7~b). Also, when the third embodiment is applied to a semiconductor device as.shown in Figs. 3(c) and 3(d), the superconductive material,also is provided on a path between the lead pin 24 and the semiconductor chip 23, but a magnetic material is further provided in the semiconductor device as shown in FIG. 6.
In addition, when the third embodiment is applied to a semiconductor device package as shown in Fig. 4(a~, inner leads (not shown) made of superconductive materials are provided and a magnetic means 135 for adjusting the critical current is fixed on:the device as shown in Fig. 8.
Thus, in the device shown in Fig. 8, the superconductive materials are provided as in the devices shown in Figs. 6 and 7.
While a few embodiments of the invention have been described in detail above, it is to be 1304~7~
1 particularly understood that the invention is not limited thereto or thereby and can be modiied or changed in various manners.
For example, of all the external terminals, only those which may receive overcurrents may be provided with conducting members of superconducting material. Alternatively, conducting members of superconducting material may be provided for all of the external terminals, and the magnetic means may be provided for some of the external terminals.
Furthermore, the package shown in ~IG. 6 may be so modified that the sealing member is made of superconducting material, and the sealing member receives current to form a magnetic field. In addition, in the package of FIG. 6, the magnetic elements may be replaced by chip coils. Any of a variety of other semiconductor packages also are available.
As was described in detail above, when an overcurrent applied to an external terminal o~ the semiconductor device of the present invention exceeds the critical current value of the superconducting material, a resistance is provided, thus protecting the semiconductor chip inside the device from damage. Furthermore, in the semiconductor device of the invention the critical current value can be ad~usted by the use of magnetie fields as described. Therefore, the semiconductor devic~ of the invention, though simple in construction, can protect the semiconductor chip from overcurrent with the high frequency characteristic remaining unchanged, and also can set the overcurrent allowable value to a desired value.
These and other beneficial fea~ures are believed to be included within ~he scope of the invention as defined by the following claimsO
Claims (4)
1. A semiconductor device, comprising:
a semiconductor package;
a semiconductor chip, having electrode pads, disposed inside of said package;
outer terminal disposed on the outside of said package; and current flow paths electrically connecting said electrode pads with said outer terminals, at least portion of said current flow paths being made of a superconducting material maintained at a temperature lower than the critical temperature of said superconducting material and having a critical current value that is lower than the maximum allowable current value of said semiconductor chip so that the electrical resistance value of said superconducting material will change from zero to a finite value before the maximum allowable current value of said semiconductor chip is reached so as to cause a voltage drop across said superconducting material thus reducing the power dissipated by said semiconductor chip.
a semiconductor package;
a semiconductor chip, having electrode pads, disposed inside of said package;
outer terminal disposed on the outside of said package; and current flow paths electrically connecting said electrode pads with said outer terminals, at least portion of said current flow paths being made of a superconducting material maintained at a temperature lower than the critical temperature of said superconducting material and having a critical current value that is lower than the maximum allowable current value of said semiconductor chip so that the electrical resistance value of said superconducting material will change from zero to a finite value before the maximum allowable current value of said semiconductor chip is reached so as to cause a voltage drop across said superconducting material thus reducing the power dissipated by said semiconductor chip.
2. A semiconductor device as claimed in claim 1, further comprising:
means for applying a magnetic field to said superconducting material so as to control said critical current value.
means for applying a magnetic field to said superconducting material so as to control said critical current value.
3. A semiconductor device, comprising a semiconductor package;
a semiconductor chip having electrode pads, disposed inside of said package;
signal terminals disposed on the outside of said package;
monitor terminals disposed on the outside of said package; and current flow paths, each electrically connecting one of said electrode pads with one of said signal terminals, at least a portion of said current flow paths being made of a superconducting material maintained at a temperature lower than the critical temperature of said superconducting material and having a critical current value that is lower than the maximum allowable current value of said semiconductor chip so that the electrical resistance value of said superconducting material will change from zero to a finite value before the maximum allowable current value of said semiconductor chip is reached so as to cause a voltage drop across said superconducting material thus reducing the power dissipated by said semiconductor chip, an end of said portion of said current flow path which is connected to one of said electrode pads also being electrically connected to one of said monitoring terminals so as to allow monitoring of a potential difference between one of said signal terminals and a corresponding one of said monitoring terminals when the critical current value of said super conductor material is exceeded.
a semiconductor chip having electrode pads, disposed inside of said package;
signal terminals disposed on the outside of said package;
monitor terminals disposed on the outside of said package; and current flow paths, each electrically connecting one of said electrode pads with one of said signal terminals, at least a portion of said current flow paths being made of a superconducting material maintained at a temperature lower than the critical temperature of said superconducting material and having a critical current value that is lower than the maximum allowable current value of said semiconductor chip so that the electrical resistance value of said superconducting material will change from zero to a finite value before the maximum allowable current value of said semiconductor chip is reached so as to cause a voltage drop across said superconducting material thus reducing the power dissipated by said semiconductor chip, an end of said portion of said current flow path which is connected to one of said electrode pads also being electrically connected to one of said monitoring terminals so as to allow monitoring of a potential difference between one of said signal terminals and a corresponding one of said monitoring terminals when the critical current value of said super conductor material is exceeded.
4. A semiconductor device as claimed in claim 3, further comprising:
means for applying a magnetic field to said superconducting material so as to control said critical current value.
means for applying a magnetic field to said superconducting material so as to control said critical current value.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP181555/87 | 1987-07-21 | ||
| JP181554/87 | 1987-07-21 | ||
| JP62181553A JPS6425449A (en) | 1987-07-21 | 1987-07-21 | Semiconductor device |
| JP62181555A JPS6425451A (en) | 1987-07-21 | 1987-07-21 | Semiconductor device |
| JP181553/87 | 1987-07-21 | ||
| JP62181554A JPS6425450A (en) | 1987-07-21 | 1987-07-21 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1304171C true CA1304171C (en) | 1992-06-23 |
Family
ID=27325028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000572725A Expired - Fee Related CA1304171C (en) | 1987-07-21 | 1988-07-21 | Overcurrent protection circuit for semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4958200A (en) |
| EP (1) | EP0300434A3 (en) |
| KR (1) | KR920000829B1 (en) |
| CA (1) | CA1304171C (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6339191B1 (en) * | 1994-03-11 | 2002-01-15 | Silicon Bandwidth Inc. | Prefabricated semiconductor chip carrier |
| DE4410211B4 (en) * | 1994-03-24 | 2005-07-21 | Atmel Germany Gmbh | Circuit arrangement for the switchable control of a load |
| EP0756366A1 (en) * | 1995-07-24 | 1997-01-29 | HE HOLDINGS, INC. dba HUGHES ELECTRONICS | Electrostatic discharge protection using high temperature superconductors |
| KR100249162B1 (en) * | 1996-12-31 | 2000-03-15 | 김영환 | Esd protection circuit |
| JPH11112819A (en) * | 1997-09-30 | 1999-04-23 | Fuji Photo Film Co Ltd | Color conversion lookup table, preparation method and device therefor and color conversion method and device for image using the same |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3925707A (en) * | 1973-10-17 | 1975-12-09 | Westinghouse Electric Corp | High voltage current limiting circuit breaker utilizing a super conductive resistance element |
| JPS6010451B2 (en) * | 1979-08-27 | 1985-03-18 | 工業技術院長 | Switching circuit using Josephson effect |
| US4554567A (en) * | 1983-03-21 | 1985-11-19 | Sperry Corporation | Superconductive integrated circuit incorporating a magnetically controlled interferometer |
| JPS59228781A (en) * | 1983-06-10 | 1984-12-22 | Hitachi Micro Comput Eng Ltd | Low temperature operation logic circuit device |
| JPS6018978A (en) * | 1983-07-12 | 1985-01-31 | Seiko Epson Corp | Josephson integrated circuit device |
| US4670770A (en) * | 1984-02-21 | 1987-06-02 | American Telephone And Telegraph Company | Integrated circuit chip-and-substrate assembly |
| JPS6173358A (en) * | 1984-09-18 | 1986-04-15 | Nec Corp | Case for lsi |
| US4837609A (en) * | 1987-09-09 | 1989-06-06 | American Telephone And Telegraph Company, At&T Bell Laboratories | Semiconductor devices having superconducting interconnects |
| JPH01147877A (en) * | 1987-12-04 | 1989-06-09 | Toshiba Corp | Electric power converter |
-
1988
- 1988-07-11 KR KR1019880008575A patent/KR920000829B1/en not_active IP Right Cessation
- 1988-07-19 EP EP19880111620 patent/EP0300434A3/en not_active Ceased
- 1988-07-20 US US07/221,599 patent/US4958200A/en not_active Expired - Fee Related
- 1988-07-21 CA CA000572725A patent/CA1304171C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0300434A3 (en) | 1990-09-19 |
| KR890003022A (en) | 1989-04-12 |
| EP0300434A2 (en) | 1989-01-25 |
| KR920000829B1 (en) | 1992-01-30 |
| US4958200A (en) | 1990-09-18 |
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