CA1318417C - Polycrystalline or microcrystalline thin film transistor - Google Patents

Polycrystalline or microcrystalline thin film transistor

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Publication number
CA1318417C
CA1318417C CA000600932A CA600932A CA1318417C CA 1318417 C CA1318417 C CA 1318417C CA 000600932 A CA000600932 A CA 000600932A CA 600932 A CA600932 A CA 600932A CA 1318417 C CA1318417 C CA 1318417C
Authority
CA
Canada
Prior art keywords
source
thin film
drain regions
film transistor
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA000600932A
Other languages
French (fr)
Inventor
Kazuhiro Kobayashi
Johan Francis Albert Nijs
Kris August Emilia Ferdinand Baert Baert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Interuniversitair Microelektronica Centrum vzw IMEC
Original Assignee
Interuniversitair Microelektronica Centrum vzw IMEC
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Application filed by Interuniversitair Microelektronica Centrum vzw IMEC filed Critical Interuniversitair Microelektronica Centrum vzw IMEC
Application granted granted Critical
Publication of CA1318417C publication Critical patent/CA1318417C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline

Abstract

ABSTRACT OF THE DISCLOSURE
Disclosed is a method of producing a thin film transistor in which the conductivity of source and/or drain is high. The process comprises (1) applying a thin film semi-conductor material comprising silicon onto a non-silicon foundation, for example, a glass or quartz plate such that polycrystalline or microcrystalline material is formed, (2) apply-ing source and/or drain regions of doped semiconductor material onto the film, (3) applying insulating material onto the film, and (4) applying a gate region onto the insulating material, wherein the source and/or drain regions are applied such that the source and/or drain regions have a crystalline structure that is related to the crystalline structure of the thin film.
The method can be performed using relatively inexpensive equipments.

Description

131~
1 217~6-547 BACKGROUND OF THE INVENTION
The present lnvention relates to the production of th:ln fllm translstors in whlch the conductivlty o~ source and/or ~raln regions should be hlgh, e.g. for drlvlng llquld crystal dlsplays (LCD).
Fro~ the prior art lt ls known to produce ~ource and/or drain regions for a thln Ellm translstor wlth a hlgh conductlvlty, e.g. greater than or equlvalent to lQ~l cm~l ~y means of lon lm-plantatlon. Such lon implantation ls cumbersome, re~ulres compll-cated equlpment and is dl~ficult to apply to relatlvely large sur-; faces. Further it is known from EP-A-0062079 to produce a seml conductlon layer ln mlcrocrystalllne form by means of a PECVD re-actor.
US patent 4625224 relates to a thin film translstor hav-lng 0.001-5 atomic %CL.
EP-A-0161555 relates to a polycrystalllne sllicon thin fllm transistor structure havlng source and draln regions ln amor-phous form.
Also US-A-4,485,121, EP-A-0232619 and GB-A-2156385 show structures uslng amorphous materlals.
Further the followlng publicatlons are known to the appllcant: EP-0132076, EP-0200552, EIP-0201270, EP-0206649, EP-0206650, EP-0228295, EP-0228870, EIP~0229518, EP-0229707, EP-0232148, EP-0234094, ~P-0240305, ~'P-0240306, EP-0240314, EP-0241311, EP-0241316, EP-0241317, EP-0242207, ~P-0243074~ and the artlcle "Very-low-Temperature Slllcon Epltaxy by Plasma-DVD
Uslng SiH4-PH3-H2 Reactants for Blpolar Devlces" from the Japanese Journ~l of Applled Physics, Vol. 27, No. 4, Aprll 1988~ pages L493-L495.
SUMMARY OF THE INVENTION
It ls an ob~ect of the present lnventlon to lmprove upon the above prlor art.
It ls a further ob~ect of the present lnvention to pro-duce a thln fllm translstor usln~ relatlvely inexpenslve 3~

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,; :

, -2- 13~

equipment.
It is a further ob~ect to produce a thin film transistor having high conductlvity in source and drain regions at relatively low temperatures.
s Yet another ob~ect of the present invention is to produce a thin ~ilm transistor having such a high lateral conductivity in source and drain regions, that cross sectional areas of its source and drain contacts can be smaller than the cross sectional areas of the source and/or 10 drain regions. This feature simplifies alignment in the production process and is of great importance for reducing the dimensions of such a thin film transistor.
Another aspect relatss to a depositing process in which a type of self-alignment is advantageously used.
The present invention relates to a method of producing a thin film transistor comprising the steps of:
applying a thin film of semiconductor material, comprising silicon, under such conditions that 20 polycrystalline or microcrystaIline material is formed, onto a non silicon foundation, e.g. a sheet of glass or quartz;
applying source and/or drain regions of doped semi-conductor material onto said film;
applying insulating ma~erial onto said film; and applying a gate region onto said insulating material;
; ln which the source and/or drain regions are applied such that the source and/or drain regions have a crystalline structure that is related to the crystalline 30 structure of said thin film.
Preferably fluor (F) is used in the process, since F-ions show properties for etching an oxidized top layer.
Further, the presence of F-ions may diminlsh the H content in a deposited layer which H content could prevent grains from 35 growing.
Further, the present invention relates to a thin film transistor.
' :
~ .

1 3 ~
BRIEF DESCRIPTION O~F THE DRAWINGS
Further ob~ects, features, details and advantag~s of the present inventlon will be clarified on the basls of the followlng disclosure in which preferred embodiments are illustrated wlth reference to the accompanying drawinga, in 5 which:
Fig. 1 is a section vlew of a thin film transistor according to the present invention, produced according to a method according to the present invention;
Fig. 2 is a graph of the conductivity of the source 10 and drain regions of a thin film transistor of fig. 1, related to the thickness of the layers applled according to the invention;
Fig. 3 is a graph of the drain current, related to the gate voltage of the thin film transistor from fig. l;
Fig. 4 is a graph of the drain current of the thin film transistor from fig. 1, related to the drain voltage;
Fig. 5 is a graph of the conductivity of the source and drain regions of the thln film transistor from fig. 1, produced according to another preferred embodiment of the 20 method according to the present invention;
Fig. 6 a graph showing the conductivity of the source and drain regions of the thin film transistor from Fig. 1, produced according to a yet other preferred embodi-ment of the method according to the present invention; and Fig. 7A-7C show steps of producing the thin film transistor of Fig. 1 in accordance with a-method o~ the invention.

DETAILED DESCRIPTION OF THE PREFERRED_EMBODIMENTS
A thin film transistor 2 disposed onto a sheet or ~:
plate 1 (Fig. 1) of glass or quartz is produced as follows:
A polycrystalline silicon bulk layer or a thin film 8 is disposed in a LPCVD reactor (Low Pressure Chemical ,r~ Vapour Deporsit~i~on) in a direct or indirect way, indirectly 'l35 meaning to ~ dispose an amorphous silicon layer at 550C, after which annealing is executed at 630C, whereby a grain size up to 400 nm is obtained; it is also possible to ' ~ , .

_4_ 13~ 7 dispose such a polycrystalline layer in a plasrna enhanced CVD
reactor.
Thereafter the polysilicon thin film 8 is dipped in hydrogen fluoride ~HF-dip), rinsed in a glove box using a N2 5 purge so as to diminish water and oxygen pollution of the system. It ls apparent that other methods may be used to prevent water and oxygen pollution.
Next a layer ls disposed under amorphous like or microcrystalline-like deposition conditions in a PECVD
10 reactor ~Plasma Enhanced Chemical Vapour Deposition); and then such layer is selectively etched (Auto-Stop-Etching), such that source and drain regions 3, 4 respectively are defined.
A gate insulator 9 of SiO2 is then disposed in a 15 APCVD reactor (Atmospheric Pressure Chemlcal Vapour Deposition); for the skilled artison it is also apparent that, instead any other gate insulator may be used, such as silicon nitride. Onto such insulator a metal layer, e.g. of chromium (Cr~, is disposed, from which after an etching step 20 the gate 7 is produced. The gate may instead be of semiconductor material.
Next, a covering oxide layer 11 is disposed over the gate contact and the gate insulating layer 9; and finally contacts 5, 6 for connecting source, drain and/or 25 gate regions 3, 4, 7 respectively of metal, e.g. aluminium, ~; are disposed after providing holes therefor.
Produclng source and draln regions was executed in a PD80 deposition system of Plasma Technology under clrcum-stances according to the following table.
Amorphous- Microcrystalline like like Gasflow 1~ PH3 in SiH4 sccm 5-40 3-6 Gasflow H2 sccm 0 150 35 Xf-power W 5-10 30-50 Pressure mTorr 50-100 70 Temperature ~C250-450 250-450 _5_ ~ 3 ~

Test~show that disposing silicon under micro-crystalline or amorphous conditions produces a conductivity of such a layer. That is depends on the conductivity of the underlying layer. The curves of Fiy. 2 5 illustrate this principle. ~urves I and II show the increase of conductivity at increasing thickness of a layer disposed on a glass plate, at different grow rates, viz. 3.3 nm per minute and 1.3 nm per minute, respectively; curves III and IV
show test results under microcrystalline-like diposition 10 conditions in the plasma reactor, having a bulk layer of polysilicon as foundation, whereby again deposition rates of 3.3, 1.3 nm/minute respectively were used. Dots V and VI show two separate measurements of a thin layer slowly deposited, viz. at a rate of 0.12 nm/minute and 0.2 nm/minute 15 respectively. The conductivity or resistance measurements used a fourpoint probe.
Without limiting the invention, a plausible explanation of the differences between the curves of Fig. 2 is that epitaxial-like growth is produced and that 20 polycrystalline information of the substrate is transmitted to the layer to be disposed thereon, whereby an accordingly-lower resistance of at least a first part of that layer is produced. The crystalline structure of the upper layer is related to the crystalline structure of the lower layer.
Typical characteristics ( Figs . 3, 4 respectively) o~ drain and gate current of a thin film transistor according to the present invention are satisfactory; curves a, b, c, d and e ~Fig. 3~ were measured at a drain voltage of 30, 20, 10, 6, 2 volt respectively; curves k, 1, m, n, o and p (Fig.
30 4) at a gate voltage of 40, 35, 30, 25, 20 and 15 volt respectively.
A second embodiment of the method according to the invention for producing drain and/or source regions to be used in a structure shown in Fig. 1, uses amorphous deposit-35 ion conditions, followed by annealing of the produced layer.
As a standardized preferred embodiment of themethod according to the invention there is used a power of : - .
:
.

.

-6- ~3~ J

5W, a pressure of 50m Torr, a SiH4 flow of 20 sccm, a temperature of 300C and 1% PH3 ln the SlH~ flow. For 10 seconds the substrate was dlpped in a 10~ HF solutlon, before applylng the layer.
An anneallng temperature of 630C for three hours makes it posslble to produce a thin fllm translstor on Hoya BSi-glass, whlch remalns solld at such temperature. Fig. 5 shows the achleved conductlvlty C of the source and draln regions as a function of thickness D.
Line i joins measurlng dots of the conductivlty layer directly disposed on a glass plate, line f joins measuring points of such a layer after being annealed, line g shows the conductivity of a layer of sllicon deposited on a polycrystalline substrate after a HF dip and line h shows the 15 conductivity after sequential anneallng.
The two triangle~ ln Flg. 5 relate to two measure-ments on a a-Si:H layer annealed at 600C, deposited on a sheet of glass and polycrystalllne layer respectively. At this temperature the difference in conductivity is even more 20 signiflcent, since at 600C less nuclei for crystallization are formed than at 630C. The value of the conductivity was found to be independent of the duration of the annealing process, which duratlon was varied between 1-12 hours. The thickness of the layer was 20 nm.
~; 25 The reduction in conductivity of the layer at increasing thickness indicates a decreasing degree of crystaIline structure of the layer at lncreasing distance from the polycristaline substrate. A certain minimal duratlon of the chemical influence of F ions appears to be desired.
Without limiting the invention, an explanation for further improvement of the conductivity accordlng to the second embodiment is based on the assumptlon that the source and/or drain areas forms larger polycrystaline grains spaced from the substrate, under amorphous-like deposltion 35 conditlons and after anneallng, than at microcrystaline-like deposition conditions.

1 3 ~ 7 , -7-The above results were achieved by means of a relatively simple plasma CVD reactor, which was sealed by means of 0-rings; no ultra high vacuurn is required; and the reactor used was relatively inexpensive.
The results of a third embodiment of the method according to the present invention (Fig. 6) were obtained by introducing a fluoridized SiH4 gas, or SiHnF~ n (n=1,2,3) into the PECVD apparatus. Curve rr relates to the position under microcrystalline conditions, as above mentioned; curve 10 t relates to the preferred embodiment, as above described in which A-Si:H is annealed; and curve s relates to the third embodiment, in which SiH2F2 is lntroduced at a rate of 5 sccm, 1% PH3 in SiH4 is introduced at a rate of 1 sccm, H2 is introduced at a rate of 100 sccm, at a pressure of 3 Torr, a 15 temperature between 250-350 C and an applied power of 17-35 watts.
A fourth embodiment of the method according to the present invention (Figs. 7A-7C) improves alignment of source and drain areas relatively to the gate, without using an 20 additional mask step.
By means of a first mask ~not shown) a layer 21 of polycrystaline silicon was deposited on a quartz she~t 22 (Fig. 7A). By means of a second mask (not shown) a gate insulator 23 (Fig. 7B) and a gate 24 of conducting or semi-25 conducting material are provided.
Thereafter source and drain regions 26, 27 resp.~Fig. 7B) were applied in a PECVD reactor under such conditions that no deposition was measurable onto the quartz plate 22 nor on the sides of the gate insulator 23. This was 30 achieved by introducing Si~4 into the PECVD reactor in a temperature range between 300-350 C. At such temperatures Si-radicals were etched from a SiO2 surface while deposited on a polysilicon foundation.
Next, by means of two consecutive masks a 35 passivation layer 28 of SiO2 and source and drain contacts 2g, 31 respectively were applied, obtaining a thin film transistor having mutually aligned gate and source/drain-, ' ' ~ .:. ' ' :

regions.
Due to the absence of overlap between the gate 24and source and drain regions 26, 27 respectively, the AC
conduction of the thin film transistor is improved; at 5 decreasing dimensions of the process, moreover, the self-alignment provides distinct advantages over the prior art.
Although the present invention has been described in connection with a preferred embodiment thereof, many variations and modifications will now become apparent to 10 those s]cilled in the art. For example, other epitaxial techniques for depositing onto a polycrystalline bulk layer can be used; the plasma technlque using radio frequencies and containing fluor being preferred due to the possibility of growing at low temperatures and 15 because high concentrations of dopant can be achieved. Other dopants than phorphos can be included in the process.
Additionally~
source and/or drain regions may further include H, F, Ge, Cl etc. It is preferred, therefore, that the present 20 invention be limited not by the sp~cific disclosure herein, but only by the appended claims.

Claims (13)

1. A method of producing a thin film transistor, comprising:
applying onto a non-silicon foundation a thin film of silicon semiconductor material under such conditions that polycrystalline or microcrystalline material is formed;
applying source and/or drain regions of doped semi-conductor material onto said film;
applying insulating material onto said film; and applying a gate region onto said insulating material;
wherein said source and/or drain regions are applied such that said source and/or drain regions have a crystalline structure that depends upon the crystalline structure of said thin film.
2. A method according to claim 1, in which said source and/or drain regions are applied in a Plasma Enhanced Chemical Vapour Deposition process in which PECVD process halogen ions are present.
3. A method according to claim 2, further comprising the step of subjecting said film to a HF dip prior to introducing said film into a PECVD apparatus.
4. A method according to claim 3, in which said source and/or drain regions are applied under conditions for depositing amorphous silicon on a non-silicon substrate, after which the so-formed structure is annealed for a predetermined time period.
5. A method according to claim 3, in which said source and/or drain regions are applied under conditions for depositing microcrystalline material on a non-silicon substrate.
6. A method according to claim 2, in which said source and/or drain regions are applied in a PECVD apparatus under microcrystalline conditions and in which SiHnF4-n (n=o,1,2,3) is introduced in the PECVD apparatus.
7. A method according to claim 5 or 6, in which the so-formed structure is annealed for a predetermined time period.
8. A method according to claim 4, in which annealing is performed at a temperature under 700°C.
9. A method according to any one of the claims 2-6, in which one or more etching gasses are present in the PECVD process during the time period during which deposition is executed.
10. A method according to claim 9, in which the etching gas is SiF4.
11. A thin film transistor comprising a thin film of silicon semi-conductor material in polycrystalline or micro crystalline form, having doped source and/or drain regions, of which the crystalline structure is dependent upon the crystalline structure of said thin film.
12. A thin film transistor according to claim 11, in which source and drain regions have a conductivity greater than or equivalent to approx. 5 mhos per cm.
13. A thin film transistor according to claim 11 or 12, comprising source and/or drain contacts to said drain and/or source regions respectively, which have a smaller cross section than the cross section of said source and/or drain regions.
CA000600932A 1988-05-30 1989-05-29 Polycrystalline or microcrystalline thin film transistor Expired - Fee Related CA1318417C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL88.01379 1988-05-30
NL8801379A NL8801379A (en) 1988-05-30 1988-05-30 METHOD FOR MANUFACTURING A THIN FILM TRANSISTOR AND SUCH A THIN FILM TRANSISTOR

Publications (1)

Publication Number Publication Date
CA1318417C true CA1318417C (en) 1993-05-25

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Country Status (8)

Country Link
US (1) US5102813A (en)
EP (1) EP0344863B1 (en)
JP (1) JPH02177368A (en)
KR (1) KR0183964B1 (en)
AT (1) ATE141715T1 (en)
CA (1) CA1318417C (en)
DE (1) DE68926980T2 (en)
NL (1) NL8801379A (en)

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EP0344863A1 (en) 1989-12-06
US5102813A (en) 1992-04-07
DE68926980D1 (en) 1996-09-26
KR900019245A (en) 1990-12-24
DE68926980T2 (en) 1997-01-16
KR0183964B1 (en) 1999-03-20
ATE141715T1 (en) 1996-09-15
NL8801379A (en) 1989-12-18
JPH02177368A (en) 1990-07-10
EP0344863B1 (en) 1996-08-21

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