CA2008904A1 - Quantum well vertical cavity laser - Google Patents

Quantum well vertical cavity laser

Info

Publication number
CA2008904A1
CA2008904A1 CA2008904A CA2008904A CA2008904A1 CA 2008904 A1 CA2008904 A1 CA 2008904A1 CA 2008904 A CA2008904 A CA 2008904A CA 2008904 A CA2008904 A CA 2008904A CA 2008904 A1 CA2008904 A1 CA 2008904A1
Authority
CA
Canada
Prior art keywords
quantum well
lasing
integrated circuits
vertical cavity
cavity laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2008904A
Other languages
French (fr)
Other versions
CA2008904C (en
Inventor
Kai-Feng Huang
Jack Lee Jewell
Samuel Leverte Mccall, Jr.
Kuochou Tai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Kai-Feng Huang
Jack Lee Jewell
Samuel Leverte Mccall, Jr.
Kuochou Tai
American Telephone And Telegraph Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kai-Feng Huang, Jack Lee Jewell, Samuel Leverte Mccall, Jr., Kuochou Tai, American Telephone And Telegraph Company filed Critical Kai-Feng Huang
Publication of CA2008904A1 publication Critical patent/CA2008904A1/en
Application granted granted Critical
Publication of CA2008904C publication Critical patent/CA2008904C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission

Abstract

Distributed feeback mirror cavities are found capable of sufficient reflectance-loss characteristics to permit lasing in two or a single quantum well structure in which lasing is in the thin (quantum) dimension. Such lasers sometimes known as "quantum well surface emitting lasers" are of sufficiently low threshold value as to permit use in integrated circuits of high integration density - e.g. at 1 micron design rules. Anticipated uses, now made possible, include optical circuitry for computer chip interconnect as well as optoelectric integrated circuits for many purposes including computing itself.
CA002008904A 1989-03-01 1990-01-30 Quantum well vertical cavity laser Expired - Fee Related CA2008904C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/317,699 US4999842A (en) 1989-03-01 1989-03-01 Quantum well vertical cavity laser
US317,699 1989-03-01

Publications (2)

Publication Number Publication Date
CA2008904A1 true CA2008904A1 (en) 1990-09-01
CA2008904C CA2008904C (en) 1994-07-26

Family

ID=23234876

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002008904A Expired - Fee Related CA2008904C (en) 1989-03-01 1990-01-30 Quantum well vertical cavity laser

Country Status (5)

Country Link
US (1) US4999842A (en)
EP (1) EP0385643A3 (en)
JP (1) JP2572143B2 (en)
KR (1) KR940004425B1 (en)
CA (1) CA2008904C (en)

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US5991326A (en) 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
US6226425B1 (en) 1999-02-24 2001-05-01 Bandwidth9 Flexible optical multiplexer
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Also Published As

Publication number Publication date
EP0385643A2 (en) 1990-09-05
KR940004425B1 (en) 1994-05-25
US4999842A (en) 1991-03-12
EP0385643A3 (en) 1991-07-17
JP2572143B2 (en) 1997-01-16
CA2008904C (en) 1994-07-26
JPH02278784A (en) 1990-11-15
KR900015398A (en) 1990-10-26

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