US5399528A
(en)
*
|
1989-06-01 |
1995-03-21 |
Leibovitz; Jacques |
Multi-layer fabrication in integrated circuit systems
|
JPH0781132B2
(en)
*
|
1990-08-29 |
1995-08-30 |
株式会社フジミインコーポレーテッド |
Abrasive composition
|
US5228886A
(en)
*
|
1990-10-09 |
1993-07-20 |
Buehler, Ltd. |
Mechanochemical polishing abrasive
|
US5308438A
(en)
*
|
1992-01-30 |
1994-05-03 |
International Business Machines Corporation |
Endpoint detection apparatus and method for chemical/mechanical polishing
|
US5445996A
(en)
*
|
1992-05-26 |
1995-08-29 |
Kabushiki Kaisha Toshiba |
Method for planarizing a semiconductor device having a amorphous layer
|
US5209816A
(en)
*
|
1992-06-04 |
1993-05-11 |
Micron Technology, Inc. |
Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing
|
US5225034A
(en)
*
|
1992-06-04 |
1993-07-06 |
Micron Technology, Inc. |
Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing
|
USRE38878E1
(en)
*
|
1992-09-24 |
2005-11-15 |
Ebara Corporation |
Polishing apparatus
|
EP0911115B1
(en)
*
|
1992-09-24 |
2003-11-26 |
Ebara Corporation |
Polishing apparatus
|
US5635083A
(en)
*
|
1993-08-06 |
1997-06-03 |
Intel Corporation |
Method and apparatus for chemical-mechanical polishing using pneumatic pressure applied to the backside of a substrate
|
US5332467A
(en)
*
|
1993-09-20 |
1994-07-26 |
Industrial Technology Research Institute |
Chemical/mechanical polishing for ULSI planarization
|
US5340370A
(en)
*
|
1993-11-03 |
1994-08-23 |
Intel Corporation |
Slurries for chemical mechanical polishing
|
US5433651A
(en)
*
|
1993-12-22 |
1995-07-18 |
International Business Machines Corporation |
In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
|
US5525191A
(en)
*
|
1994-07-25 |
1996-06-11 |
Motorola, Inc. |
Process for polishing a semiconductor substrate
|
TW274625B
(en)
*
|
1994-09-30 |
1996-04-21 |
Hitachi Seisakusyo Kk |
|
US5527423A
(en)
*
|
1994-10-06 |
1996-06-18 |
Cabot Corporation |
Chemical mechanical polishing slurry for metal layers
|
US5662769A
(en)
*
|
1995-02-21 |
1997-09-02 |
Advanced Micro Devices, Inc. |
Chemical solutions for removing metal-compound contaminants from wafers after CMP and the method of wafer cleaning
|
US5893796A
(en)
*
|
1995-03-28 |
1999-04-13 |
Applied Materials, Inc. |
Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
|
US6876454B1
(en)
|
1995-03-28 |
2005-04-05 |
Applied Materials, Inc. |
Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
|
DE69632490T2
(en)
|
1995-03-28 |
2005-05-12 |
Applied Materials, Inc., Santa Clara |
Method and device for in-situ control and determination of the end of chemical mechanical grading
|
US5964643A
(en)
*
|
1995-03-28 |
1999-10-12 |
Applied Materials, Inc. |
Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
|
US5614444A
(en)
*
|
1995-06-06 |
1997-03-25 |
Sematech, Inc. |
Method of using additives with silica-based slurries to enhance selectivity in metal CMP
|
US6046110A
(en)
*
|
1995-06-08 |
2000-04-04 |
Kabushiki Kaisha Toshiba |
Copper-based metal polishing solution and method for manufacturing a semiconductor device
|
US6547974B1
(en)
|
1995-06-27 |
2003-04-15 |
International Business Machines Corporation |
Method of producing fine-line circuit boards using chemical polishing
|
JP3514908B2
(en)
*
|
1995-11-13 |
2004-04-05 |
株式会社東芝 |
Abrasive
|
JP3230986B2
(en)
*
|
1995-11-13 |
2001-11-19 |
株式会社東芝 |
Polishing method, semiconductor device manufacturing method, and semiconductor manufacturing apparatus.
|
JP3129172B2
(en)
*
|
1995-11-14 |
2001-01-29 |
日本電気株式会社 |
Polishing apparatus and polishing method
|
EP0779655A3
(en)
*
|
1995-12-14 |
1997-07-16 |
International Business Machines Corporation |
A method of chemically-mechanically polishing an electronic component
|
US5700383A
(en)
*
|
1995-12-21 |
1997-12-23 |
Intel Corporation |
Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide
|
EP0786504A3
(en)
*
|
1996-01-29 |
1998-05-20 |
Fujimi Incorporated |
Polishing composition
|
US5863838A
(en)
*
|
1996-07-22 |
1999-01-26 |
Motorola, Inc. |
Method for chemically-mechanically polishing a metal layer
|
US6093335A
(en)
*
|
1996-08-28 |
2000-07-25 |
International Business Machines Corporation |
Method of surface finishes for eliminating surface irregularities and defects
|
US5916453A
(en)
*
|
1996-09-20 |
1999-06-29 |
Fujitsu Limited |
Methods of planarizing structures on wafers and substrates by polishing
|
FR2754937B1
(en)
*
|
1996-10-23 |
1999-01-15 |
Hoechst France |
NOVEL MECHANICAL AND CHEMICAL POLISHING OF INSULATING MATERIAL LAYERS BASED ON SILICON OR SILICON DERIVATIVES
|
US5958288A
(en)
*
|
1996-11-26 |
1999-09-28 |
Cabot Corporation |
Composition and slurry useful for metal CMP
|
US6068787A
(en)
*
|
1996-11-26 |
2000-05-30 |
Cabot Corporation |
Composition and slurry useful for metal CMP
|
US5975994A
(en)
*
|
1997-06-11 |
1999-11-02 |
Micron Technology, Inc. |
Method and apparatus for selectively conditioning a polished pad used in planarizng substrates
|
US5997392A
(en)
*
|
1997-07-22 |
1999-12-07 |
International Business Machines Corporation |
Slurry injection technique for chemical-mechanical polishing
|
US5897375A
(en)
*
|
1997-10-20 |
1999-04-27 |
Motorola, Inc. |
Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture
|
US6190237B1
(en)
*
|
1997-11-06 |
2001-02-20 |
International Business Machines Corporation |
pH-buffered slurry and use thereof for polishing
|
US6146973A
(en)
*
|
1997-12-12 |
2000-11-14 |
Advanced Micro Devices, Inc. |
High density isolation using an implant as a polish stop
|
US6002160A
(en)
*
|
1997-12-12 |
1999-12-14 |
Advanced Micro Devices, Inc. |
Semiconductor isolation process to minimize weak oxide problems
|
US6072191A
(en)
*
|
1997-12-16 |
2000-06-06 |
Advanced Micro Devices, Inc. |
Interlevel dielectric thickness monitor for complex semiconductor chips
|
US6093650A
(en)
*
|
1997-12-17 |
2000-07-25 |
Advanced Micro Devices, Inc. |
Method for fully planarized conductive line for a stack gate
|
US6027998A
(en)
*
|
1997-12-17 |
2000-02-22 |
Advanced Micro Devices, Inc. |
Method for fully planarized conductive line for a stack gate
|
US6555476B1
(en)
|
1997-12-23 |
2003-04-29 |
Texas Instruments Incorporated |
Silicon carbide as a stop layer in chemical mechanical polishing for isolation dielectric
|
US6004862A
(en)
*
|
1998-01-20 |
1999-12-21 |
Advanced Micro Devices, Inc. |
Core array and periphery isolation technique
|
US6153043A
(en)
*
|
1998-02-06 |
2000-11-28 |
International Business Machines Corporation |
Elimination of photo-induced electrochemical dissolution in chemical mechanical polishing
|
US6117778A
(en)
*
|
1998-02-11 |
2000-09-12 |
International Business Machines Corporation |
Semiconductor wafer edge bead removal method and tool
|
US6015499A
(en)
*
|
1998-04-17 |
2000-01-18 |
Parker-Hannifin Corporation |
Membrane-like filter element for chemical mechanical polishing slurries
|
TW455626B
(en)
*
|
1998-07-23 |
2001-09-21 |
Eternal Chemical Co Ltd |
Chemical mechanical abrasive composition for use in semiconductor processing
|
JP2000040679A
(en)
*
|
1998-07-24 |
2000-02-08 |
Hitachi Ltd |
Manufacture of semiconductor integrated circuit device
|
TW416104B
(en)
*
|
1998-08-28 |
2000-12-21 |
Kobe Steel Ltd |
Method for reclaiming wafer substrate and polishing solution composition for reclaiming wafer substrate
|
KR100462132B1
(en)
|
1998-08-31 |
2004-12-17 |
히다치 가세고교 가부시끼가이샤 |
Abrasive liquid for metal and method for polishing
|
JP4090589B2
(en)
*
|
1998-09-01 |
2008-05-28 |
株式会社フジミインコーポレーテッド |
Polishing composition
|
US6572453B1
(en)
|
1998-09-29 |
2003-06-03 |
Applied Materials, Inc. |
Multi-fluid polishing process
|
DE69942615D1
(en)
|
1998-10-23 |
2010-09-02 |
Fujifilm Electronic Materials |
A CHEMICAL-MECHANICAL POLISHING AIRBREAKING, CONTAINING A ACCELERATOR SOLUTION
|
US6083840A
(en)
*
|
1998-11-25 |
2000-07-04 |
Arch Specialty Chemicals, Inc. |
Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys
|
US6140239A
(en)
*
|
1998-11-25 |
2000-10-31 |
Advanced Micro Devices, Inc. |
Chemically removable Cu CMP slurry abrasive
|
US7578923B2
(en)
*
|
1998-12-01 |
2009-08-25 |
Novellus Systems, Inc. |
Electropolishing system and process
|
US7204924B2
(en)
*
|
1998-12-01 |
2007-04-17 |
Novellus Systems, Inc. |
Method and apparatus to deposit layers with uniform properties
|
US7425250B2
(en)
*
|
1998-12-01 |
2008-09-16 |
Novellus Systems, Inc. |
Electrochemical mechanical processing apparatus
|
US7427337B2
(en)
*
|
1998-12-01 |
2008-09-23 |
Novellus Systems, Inc. |
System for electropolishing and electrochemical mechanical polishing
|
US6610190B2
(en)
*
|
2000-11-03 |
2003-08-26 |
Nutool, Inc. |
Method and apparatus for electrodeposition of uniform film with minimal edge exclusion on substrate
|
US6413388B1
(en)
|
2000-02-23 |
2002-07-02 |
Nutool Inc. |
Pad designs and structures for a versatile materials processing apparatus
|
US6497800B1
(en)
*
|
2000-03-17 |
2002-12-24 |
Nutool Inc. |
Device providing electrical contact to the surface of a semiconductor workpiece during metal plating
|
US6136714A
(en)
*
|
1998-12-17 |
2000-10-24 |
Siemens Aktiengesellschaft |
Methods for enhancing the metal removal rate during the chemical-mechanical polishing process of a semiconductor
|
US6290736B1
(en)
|
1999-02-09 |
2001-09-18 |
Sharp Laboratories Of America, Inc. |
Chemically active slurry for the polishing of noble metals and method for same
|
US6258625B1
(en)
|
1999-05-18 |
2001-07-10 |
International Business Machines Corporation |
Method of interconnecting electronic components using a plurality of conductive studs
|
US6554878B1
(en)
|
1999-06-14 |
2003-04-29 |
International Business Machines Corporation |
Slurry for multi-material chemical mechanical polishing
|
TW486514B
(en)
|
1999-06-16 |
2002-05-11 |
Eternal Chemical Co Ltd |
Chemical mechanical abrasive composition for use in semiconductor processing
|
US6358119B1
(en)
*
|
1999-06-21 |
2002-03-19 |
Taiwan Semiconductor Manufacturing Company |
Way to remove CU line damage after CU CMP
|
US6419554B2
(en)
*
|
1999-06-24 |
2002-07-16 |
Micron Technology, Inc. |
Fixed abrasive chemical-mechanical planarization of titanium nitride
|
TWI227726B
(en)
|
1999-07-08 |
2005-02-11 |
Eternal Chemical Co Ltd |
Chemical-mechanical abrasive composition and method
|
CN1107097C
(en)
*
|
1999-07-28 |
2003-04-30 |
长兴化学工业股份有限公司 |
Chemicomechanically grinding composition and method
|
US6436302B1
(en)
|
1999-08-23 |
2002-08-20 |
Applied Materials, Inc. |
Post CU CMP polishing for reduced defects
|
TW499471B
(en)
|
1999-09-01 |
2002-08-21 |
Eternal Chemical Co Ltd |
Chemical mechanical/abrasive composition for semiconductor processing
|
US6355153B1
(en)
*
|
1999-09-17 |
2002-03-12 |
Nutool, Inc. |
Chip interconnect and packaging deposition methods and structures
|
US6258140B1
(en)
*
|
1999-09-27 |
2001-07-10 |
Fujimi America Inc. |
Polishing composition
|
US6734110B1
(en)
|
1999-10-14 |
2004-05-11 |
Taiwan Semiconductor Manufacturing Company |
Damascene method employing composite etch stop layer
|
US6347978B1
(en)
*
|
1999-10-22 |
2002-02-19 |
Cabot Microelectronics Corporation |
Composition and method for polishing rigid disks
|
KR20010046395A
(en)
|
1999-11-12 |
2001-06-15 |
안복현 |
Composition for cmp polishing
|
US6612915B1
(en)
|
1999-12-27 |
2003-09-02 |
Nutool Inc. |
Work piece carrier head for plating and polishing
|
US6328633B1
(en)
*
|
2000-01-14 |
2001-12-11 |
Agere Systems Guardian Corp. |
Polishing fluid, polishing method, semiconductor device and semiconductor device fabrication method
|
US6375541B1
(en)
|
2000-01-14 |
2002-04-23 |
Lucent Technologies, Inc. |
Polishing fluid polishing method semiconductor device and semiconductor device fabrication method
|
US6354916B1
(en)
*
|
2000-02-11 |
2002-03-12 |
Nu Tool Inc. |
Modified plating solution for plating and planarization and process utilizing same
|
US20090020437A1
(en)
*
|
2000-02-23 |
2009-01-22 |
Basol Bulent M |
Method and system for controlled material removal by electrochemical polishing
|
US20060131177A1
(en)
*
|
2000-02-23 |
2006-06-22 |
Jeffrey Bogart |
Means to eliminate bubble entrapment during electrochemical processing of workpiece surface
|
US7141146B2
(en)
*
|
2000-02-23 |
2006-11-28 |
Asm Nutool, Inc. |
Means to improve center to edge uniformity of electrochemical mechanical processing of workpiece surface
|
US6482307B2
(en)
|
2000-05-12 |
2002-11-19 |
Nutool, Inc. |
Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing
|
US6852208B2
(en)
|
2000-03-17 |
2005-02-08 |
Nutool, Inc. |
Method and apparatus for full surface electrotreating of a wafer
|
US20060118425A1
(en)
*
|
2000-04-19 |
2006-06-08 |
Basol Bulent M |
Process to minimize and/or eliminate conductive material coating over the top surface of a patterned substrate
|
WO2001084617A1
(en)
*
|
2000-04-27 |
2001-11-08 |
Nu Tool Inc. |
Conductive structure for use in multi-level metallization and process
|
US6695962B2
(en)
|
2001-05-01 |
2004-02-24 |
Nutool Inc. |
Anode designs for planar metal deposits with enhanced electrolyte solution blending and process of supplying electrolyte solution using such designs
|
US7195696B2
(en)
*
|
2000-05-11 |
2007-03-27 |
Novellus Systems, Inc. |
Electrode assembly for electrochemical processing of workpiece
|
US6478936B1
(en)
|
2000-05-11 |
2002-11-12 |
Nutool Inc. |
Anode assembly for plating and planarizing a conductive layer
|
JP2001345297A
(en)
*
|
2000-05-30 |
2001-12-14 |
Hitachi Ltd |
Method for producing semiconductor integrated circuit device and polishing apparatus
|
US6406923B1
(en)
|
2000-07-31 |
2002-06-18 |
Kobe Precision Inc. |
Process for reclaiming wafer substrates
|
JP2002050595A
(en)
|
2000-08-04 |
2002-02-15 |
Hitachi Ltd |
Polishing method, wiring forming method and method for manufacturing semiconductor device
|
US6921551B2
(en)
*
|
2000-08-10 |
2005-07-26 |
Asm Nutool, Inc. |
Plating method and apparatus for controlling deposition on predetermined portions of a workpiece
|
US7754061B2
(en)
*
|
2000-08-10 |
2010-07-13 |
Novellus Systems, Inc. |
Method for controlling conductor deposition on predetermined portions of a wafer
|
US7220322B1
(en)
|
2000-08-24 |
2007-05-22 |
Applied Materials, Inc. |
Cu CMP polishing pad cleaning
|
KR100398141B1
(en)
*
|
2000-10-12 |
2003-09-13 |
아남반도체 주식회사 |
Chemical mechanical polishing slurry composition and planarization method using same for semiconductor device
|
US20020068454A1
(en)
*
|
2000-12-01 |
2002-06-06 |
Applied Materials, Inc. |
Method and composition for the removal of residual materials during substrate planarization
|
US6802946B2
(en)
|
2000-12-21 |
2004-10-12 |
Nutool Inc. |
Apparatus for controlling thickness uniformity of electroplated and electroetched layers
|
CN1255854C
(en)
*
|
2001-01-16 |
2006-05-10 |
卡伯特微电子公司 |
Ammonium oxalate-containing polishing system and method
|
US6866763B2
(en)
*
|
2001-01-17 |
2005-03-15 |
Asm Nutool. Inc. |
Method and system monitoring and controlling film thickness profile during plating and electroetching
|
US6383065B1
(en)
|
2001-01-22 |
2002-05-07 |
Cabot Microelectronics Corporation |
Catalytic reactive pad for metal CMP
|
JP3440419B2
(en)
*
|
2001-02-02 |
2003-08-25 |
株式会社フジミインコーポレーテッド |
Polishing composition and polishing method using the same
|
US6783432B2
(en)
|
2001-06-04 |
2004-08-31 |
Applied Materials Inc. |
Additives for pressure sensitive polishing compositions
|
KR100557600B1
(en)
*
|
2001-06-29 |
2006-03-10 |
주식회사 하이닉스반도체 |
CMP Slurry for Nitride
|
TW591089B
(en)
*
|
2001-08-09 |
2004-06-11 |
Cheil Ind Inc |
Slurry composition for use in chemical mechanical polishing of metal wiring
|
US6953389B2
(en)
*
|
2001-08-09 |
2005-10-11 |
Cheil Industries, Inc. |
Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching
|
US7077880B2
(en)
*
|
2004-01-16 |
2006-07-18 |
Dupont Air Products Nanomaterials Llc |
Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
|
JP2003160877A
(en)
*
|
2001-11-28 |
2003-06-06 |
Hitachi Ltd |
Method and apparatus for manufacturing semiconductor device
|
JP4095798B2
(en)
*
|
2001-12-20 |
2008-06-04 |
株式会社フジミインコーポレーテッド |
Polishing composition
|
US7513920B2
(en)
*
|
2002-02-11 |
2009-04-07 |
Dupont Air Products Nanomaterials Llc |
Free radical-forming activator attached to solid and used to enhance CMP formulations
|
US20030162398A1
(en)
|
2002-02-11 |
2003-08-28 |
Small Robert J. |
Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
|
JP2004006628A
(en)
*
|
2002-03-27 |
2004-01-08 |
Hitachi Ltd |
Method for manufacturing semiconductor device
|
US6858531B1
(en)
*
|
2002-07-12 |
2005-02-22 |
Lsi Logic Corporation |
Electro chemical mechanical polishing method
|
US20050040049A1
(en)
*
|
2002-09-20 |
2005-02-24 |
Rimma Volodarsky |
Anode assembly for plating and planarizing a conductive layer
|
DE10247201A1
(en)
*
|
2002-10-10 |
2003-12-18 |
Wacker Siltronic Halbleitermat |
Production of boron-doped silicon wafer, used as substrate for electronic element, e.g. processor or memory element, includes polishing with aqueous alkaline polish containing silica and alkali metal or ammonium polyaminocarboxylate
|
EP1554752B1
(en)
*
|
2002-10-16 |
2009-11-18 |
SEW-EURODRIVE GMBH & CO. |
Device including a semiconductor module and a heatsink
|
US20070131563A1
(en)
*
|
2003-04-14 |
2007-06-14 |
Asm Nutool, Inc. |
Means to improve center to edge uniformity of electrochemical mechanical processing of workpiece surface
|
US8025808B2
(en)
|
2003-04-25 |
2011-09-27 |
Saint-Gobain Ceramics & Plastics, Inc. |
Methods for machine ceramics
|
KR101123210B1
(en)
*
|
2003-07-09 |
2012-03-19 |
다이니아 케미컬스 오이 |
Non-polymeric organic particles for chemical mechanical planarization
|
US7648622B2
(en)
*
|
2004-02-27 |
2010-01-19 |
Novellus Systems, Inc. |
System and method for electrochemical mechanical polishing
|
US20060124026A1
(en)
*
|
2004-12-10 |
2006-06-15 |
3M Innovative Properties Company |
Polishing solutions
|
EP1838795A2
(en)
*
|
2005-01-07 |
2007-10-03 |
Dynea Chemicals OY |
Engineered non-polymeric organic particles for chemical mechanical planarization
|
US7169313B2
(en)
*
|
2005-05-13 |
2007-01-30 |
Endicott Interconnect Technologies, Inc. |
Plating method for circuitized substrates
|
TWI327761B
(en)
*
|
2005-10-07 |
2010-07-21 |
Rohm & Haas Elect Mat |
Method for making semiconductor wafer and wafer holding article
|
US7435162B2
(en)
*
|
2005-10-24 |
2008-10-14 |
3M Innovative Properties Company |
Polishing fluids and methods for CMP
|
EP1839695A1
(en)
*
|
2006-03-31 |
2007-10-03 |
Debiotech S.A. |
Medical liquid injection device
|
US8500985B2
(en)
*
|
2006-07-21 |
2013-08-06 |
Novellus Systems, Inc. |
Photoresist-free metal deposition
|
EP2121244B1
(en)
|
2006-12-20 |
2013-07-10 |
Saint-Gobain Ceramics & Plastics, Inc. |
Methods for machining inorganic, non-metallic workpieces
|
US20080242106A1
(en)
*
|
2007-03-29 |
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