CA2024648A1 - Accessing method, and information processing method and information processing device utilizing the same - Google Patents

Accessing method, and information processing method and information processing device utilizing the same

Info

Publication number
CA2024648A1
CA2024648A1 CA2024648A CA2024648A CA2024648A1 CA 2024648 A1 CA2024648 A1 CA 2024648A1 CA 2024648 A CA2024648 A CA 2024648A CA 2024648 A CA2024648 A CA 2024648A CA 2024648 A1 CA2024648 A1 CA 2024648A1
Authority
CA
Canada
Prior art keywords
information processing
probe electrode
format pattern
accessing
standard position
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2024648A
Other languages
French (fr)
Other versions
CA2024648C (en
Inventor
Ryo Kuroda
Hiroyasu Nose
Toshihiko Miyazaki
Takahiro Oguchi
Kunihiro Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP22170890A external-priority patent/JP2744341B2/en
Application filed by Canon Inc filed Critical Canon Inc
Publication of CA2024648A1 publication Critical patent/CA2024648A1/en
Application granted granted Critical
Publication of CA2024648C publication Critical patent/CA2024648C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/1472—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the form
    • G11B9/1481—Auxiliary features, e.g. reference or indexing surfaces
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/06—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using record carriers having variable electrical capacitance; Record carriers therefor
    • G11B9/061—Record carriers characterised by their structure or form or by the selection of the material; Apparatus or processes specially adapted for the manufacture of record carriers
    • G11B9/063—Record carriers characterised by their structure or form or by the selection of the material; Apparatus or processes specially adapted for the manufacture of record carriers characterised by the selection of the material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/861—Scanning tunneling probe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/872—Positioner
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure
    • Y10S977/947—Information storage or retrieval using nanostructure with scanning probe instrument

Abstract

An accessing method which is a method for accessing a probe electrode to the standard position of the format pattern relative to a medium having a format pattern having a standard position comprises the step of scanning the probe electrode so that said probe electrode may cross over the format pattern and detecting the change in tunnel current which occurs by such scanning, and the step of detecting the standard position of the format pattern based on the change in tunnel current detected and moving the probe electrode to the standard position detected. An information processing method containing the step of scanning the probe electrode along the format pattern and reading the information by detection of the tunnel current and an information processing device therefor are also disclosed.
CA002024648A 1989-09-07 1990-09-05 Accessing method, and information processing method and information processing device utilizing the same Expired - Fee Related CA2024648C (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP23365189 1989-09-07
JP01-233651 1989-09-07
JP22170890A JP2744341B2 (en) 1989-09-07 1990-08-22 Access method, information processing method and information processing apparatus using the same
JP02-221708 1990-08-22

Publications (2)

Publication Number Publication Date
CA2024648A1 true CA2024648A1 (en) 1991-03-08
CA2024648C CA2024648C (en) 1994-10-18

Family

ID=26524450

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002024648A Expired - Fee Related CA2024648C (en) 1989-09-07 1990-09-05 Accessing method, and information processing method and information processing device utilizing the same

Country Status (4)

Country Link
US (1) US5222060A (en)
EP (1) EP0416882B1 (en)
CA (1) CA2024648C (en)
DE (1) DE69030040T2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102866266A (en) * 2012-09-07 2013-01-09 上海交通大学 Three-dimensional micro-drive four-electrode replaceable probe

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992012528A1 (en) * 1991-01-11 1992-07-23 Hitachi Limited Surface atom machining method and apparatus
JP2744359B2 (en) * 1991-04-24 1998-04-28 キヤノン株式会社 Information reproduction and / or information recording device
JP3029143B2 (en) * 1991-06-11 2000-04-04 キヤノン株式会社 Information playback method
CA2080251C (en) * 1991-10-15 1997-12-02 Shunichi Shido Information processing apparatus with tracking mechanism
JPH06187675A (en) * 1992-09-25 1994-07-08 Canon Inc Information processor and information processing method using the same
JP3581475B2 (en) * 1995-02-13 2004-10-27 キヤノン株式会社 Information processing equipment
US5757760A (en) * 1996-01-18 1998-05-26 Canon Kabushiki Kaisha Information recording and/or reproducing apparatus and method for performing recording and/or reproduction of information by using probe
JP3679525B2 (en) * 1996-10-07 2005-08-03 キヤノン株式会社 Information recording / reproducing apparatus and information recording / reproducing method
JP3827105B2 (en) * 1997-02-12 2006-09-27 株式会社モリタユージー Ceiling-mounted automatic fire extinguisher
US7260051B1 (en) 1998-12-18 2007-08-21 Nanochip, Inc. Molecular memory medium and molecular memory integrated circuit
US6381169B1 (en) 1999-07-01 2002-04-30 The Regents Of The University Of California High density non-volatile memory device
AU764750B2 (en) 1999-07-01 2003-08-28 North Carolina State University High density non-volatile memory device
US6324091B1 (en) 2000-01-14 2001-11-27 The Regents Of The University Of California Tightly coupled porphyrin macrocycles for molecular memory storage
WO2002077633A1 (en) * 2001-03-23 2002-10-03 The Regents Of The University Of California Open circuit potential amperometry and voltammetry
US6728129B2 (en) * 2002-02-19 2004-04-27 The Regents Of The University Of California Multistate triple-decker dyads in three distinct architectures for information storage applications
US7233517B2 (en) * 2002-10-15 2007-06-19 Nanochip, Inc. Atomic probes and media for high density data storage
US20050232061A1 (en) 2004-04-16 2005-10-20 Rust Thomas F Systems for writing and reading highly resolved domains for high density data storage
US20060238696A1 (en) * 2005-04-20 2006-10-26 Chien-Hui Wen Method of aligning negative dielectric anisotropic liquid crystals
US7463573B2 (en) 2005-06-24 2008-12-09 Nanochip, Inc. Patterned media for a high density data storage device
US7367119B2 (en) * 2005-06-24 2008-05-06 Nanochip, Inc. Method for forming a reinforced tip for a probe storage device
US20070041237A1 (en) * 2005-07-08 2007-02-22 Nanochip, Inc. Media for writing highly resolved domains
US7309630B2 (en) 2005-07-08 2007-12-18 Nanochip, Inc. Method for forming patterned media for a high density data storage device
US7995216B2 (en) * 2008-07-02 2011-08-09 Ut-Battelle, Llc Control of the positional relationship between a sample collection instrument and a surface to be analyzed during a sampling procedure with image analysis

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US4087842A (en) * 1976-11-05 1978-05-02 Graham Magnetics Inc. Recording track eccentricity compensation method and means
DE3679319D1 (en) * 1986-05-27 1991-06-20 Ibm STORAGE UNIT WITH DIRECT ACCESS.
JP2556492B2 (en) * 1986-12-24 1996-11-20 キヤノン株式会社 Reproduction device and reproduction method
JP2556491B2 (en) * 1986-12-24 1996-11-20 キヤノン株式会社 Recording device and recording method
JP2557964B2 (en) * 1988-01-22 1996-11-27 インターナシヨナル・ビジネス・マシーンズ・コーポレイーシヨン Data storage
JP2760508B2 (en) * 1988-06-23 1998-06-04 工業技術院長 Scanning tunnel microscope
NL8802335A (en) * 1988-09-21 1990-04-17 Philips Nv METHOD AND APPARATUS FOR PROCESSING A MATERIAL SURFACE ON SUB-MIKRON SCALE
JP2896794B2 (en) * 1988-09-30 1999-05-31 キヤノン株式会社 Scanning tunnel current detector, scanning tunnel microscope, and recording / reproducing device
JP2547869B2 (en) * 1988-11-09 1996-10-23 キヤノン株式会社 PROBE UNIT, METHOD FOR DRIVING THE PROBE, AND SCANNING TUNNEL CURRENT DETECTION DEVICE HAVING THE PROBE UNIT
US5091880A (en) * 1989-02-02 1992-02-25 Olympus Optical Co., Ltd. Memory device
JP2821005B2 (en) * 1989-10-02 1998-11-05 オリンパス光学工業株式会社 Micro surface shape measuring device
JPH0687003B2 (en) * 1990-02-09 1994-11-02 株式会社日立製作所 Scanning electron microscope with scanning tunneling microscope
US5066858A (en) * 1990-04-18 1991-11-19 Digital Instruments, Inc. Scanning tunneling microscopes with correction for coupling effects
US5053699A (en) * 1990-05-25 1991-10-01 Texas Instruments Incorporated Scanning electron microscope based parametric testing method and apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102866266A (en) * 2012-09-07 2013-01-09 上海交通大学 Three-dimensional micro-drive four-electrode replaceable probe
CN102866266B (en) * 2012-09-07 2014-08-06 上海交通大学 Three-dimensional micro-drive four-electrode replaceable probe

Also Published As

Publication number Publication date
EP0416882A3 (en) 1992-05-20
DE69030040D1 (en) 1997-04-10
CA2024648C (en) 1994-10-18
US5222060A (en) 1993-06-22
EP0416882B1 (en) 1997-03-05
EP0416882A2 (en) 1991-03-13
DE69030040T2 (en) 1997-07-03

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