CA2026605A1 - Multi-level interconnection cmos devices including sog - Google Patents

Multi-level interconnection cmos devices including sog

Info

Publication number
CA2026605A1
CA2026605A1 CA002026605A CA2026605A CA2026605A1 CA 2026605 A1 CA2026605 A1 CA 2026605A1 CA 002026605 A CA002026605 A CA 002026605A CA 2026605 A CA2026605 A CA 2026605A CA 2026605 A1 CA2026605 A1 CA 2026605A1
Authority
CA
Canada
Prior art keywords
interconnect
spin
inorganic
tracks
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002026605A
Other languages
French (fr)
Other versions
CA2026605C (en
Inventor
Luc Ouellet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microsemi Semiconductor ULC
Original Assignee
Luc Ouellet
Zarlink Semiconductor Inc.
Mitel Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to CA002026605A priority Critical patent/CA2026605C/en
Application filed by Luc Ouellet, Zarlink Semiconductor Inc., Mitel Corporation filed Critical Luc Ouellet
Priority to EP91916654A priority patent/EP0551306B1/en
Priority to PCT/CA1991/000343 priority patent/WO1992006492A1/en
Priority to DE69115498T priority patent/DE69115498T2/en
Priority to US08/039,485 priority patent/US5457073A/en
Priority to JP3515201A priority patent/JPH06504406A/en
Priority to KR1019930701004A priority patent/KR100213693B1/en
Publication of CA2026605A1 publication Critical patent/CA2026605A1/en
Application granted granted Critical
Publication of CA2026605C publication Critical patent/CA2026605C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/974—Substrate surface preparation

Abstract

A method of manufacturing a semiconductor wafer, comprises performing a first metallization to deposit a first layer of interconnect material on a substrate, etching the interconnect material to form interconnect tracks, depositing a first low temperature dielectric layer over the interconnect tracks, planarizing the first low temperature dielectric layer with quasi-inorganic or inorganic spin-on glass by a non-etchback process, depositing a second low temperature dielectric layer over the spin-on glass, etching via holes through the dielectric and spin-on galss layers to reach the tracks of the first interconnect layer, performing an in-situ desorption of physically and chemically bonded water vapour in a dry environment at a temperature of at least 400°C and not more than 550°C for a time sufficient to obtain a negligible desorption rate, the temperature exceeding by at least 25°C the temperature to which the surface of the wafer will be exposed during a subsequent metallization step, and performing the subsequent metallization step to deposit a second interconnect layer extending through the via holes to the first interconnect tracks without re-exposure of the wafer to ambient conditions, and keeping this wafer under vacuum. This technique permits the reliable use of inorganic or quasi-inorganic spin-on glasses in non batch type sputtering equipment.
CA002026605A 1990-10-01 1990-10-01 Multi-level interconnection cmos devices including sog Expired - Fee Related CA2026605C (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
CA002026605A CA2026605C (en) 1990-10-01 1990-10-01 Multi-level interconnection cmos devices including sog
PCT/CA1991/000343 WO1992006492A1 (en) 1990-10-01 1991-09-25 Multi-level interconnection cmos devices with sog
DE69115498T DE69115498T2 (en) 1990-10-01 1991-09-25 MULTI-LAYER CONNECTION CMOS DEVICE WITH EJECTED GLASS
US08/039,485 US5457073A (en) 1990-10-01 1991-09-25 Multi-level interconnection CMOS devices with SOG
EP91916654A EP0551306B1 (en) 1990-10-01 1991-09-25 Multi-level interconnection cmos devices with sog
JP3515201A JPH06504406A (en) 1990-10-01 1991-09-25 Multilayer wiring CMOS with SOG
KR1019930701004A KR100213693B1 (en) 1990-10-01 1991-09-25 Multi-level interconnection cmos devices with sog

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA002026605A CA2026605C (en) 1990-10-01 1990-10-01 Multi-level interconnection cmos devices including sog

Publications (2)

Publication Number Publication Date
CA2026605A1 true CA2026605A1 (en) 1992-04-02
CA2026605C CA2026605C (en) 2001-07-17

Family

ID=4146075

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002026605A Expired - Fee Related CA2026605C (en) 1990-10-01 1990-10-01 Multi-level interconnection cmos devices including sog

Country Status (7)

Country Link
US (1) US5457073A (en)
EP (1) EP0551306B1 (en)
JP (1) JPH06504406A (en)
KR (1) KR100213693B1 (en)
CA (1) CA2026605C (en)
DE (1) DE69115498T2 (en)
WO (1) WO1992006492A1 (en)

Families Citing this family (31)

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US5504042A (en) * 1994-06-23 1996-04-02 Texas Instruments Incorporated Porous dielectric material with improved pore surface properties for electronics applications
US5554567A (en) * 1994-09-01 1996-09-10 Taiwan Semiconductor Manufacturing Company Ltd. Method for improving adhesion to a spin-on-glass
US5530293A (en) 1994-11-28 1996-06-25 International Business Machines Corporation Carbon-free hydrogen silsesquioxane with dielectric constant less than 3.2 annealed in hydrogen for integrated circuits
US5861345A (en) * 1995-05-01 1999-01-19 Chou; Chin-Hao In-situ pre-PECVD oxide deposition process for treating SOG
JP3369817B2 (en) * 1995-06-23 2003-01-20 三菱電機株式会社 Semiconductor device
JPH0964037A (en) * 1995-08-23 1997-03-07 Mitsubishi Electric Corp Manufacture of semiconductor device
US5847444A (en) * 1995-09-14 1998-12-08 Nec Corporation Semiconductor device with reduced aspect ratio contact hole
CN1107968C (en) * 1995-10-03 2003-05-07 德克萨斯仪器股份有限公司 Intermetal dielectric planarization ULSI circuits
US6319852B1 (en) 1995-11-16 2001-11-20 Texas Instruments Incorporated Nanoporous dielectric thin film formation using a post-deposition catalyst
US6380105B1 (en) 1996-11-14 2002-04-30 Texas Instruments Incorporated Low volatility solvent-based method for forming thin film nanoporous aerogels on semiconductor substrates
US5807607A (en) * 1995-11-16 1998-09-15 Texas Instruments Incorporated Polyol-based method for forming thin film aerogels on semiconductor substrates
US6130152A (en) 1995-11-16 2000-10-10 Texas Instruments Incorporated Aerogel thin film formation from multi-solvent systems
KR100255659B1 (en) * 1996-03-30 2000-05-01 윤종용 Method of application sog of semiconductor device
US5789315A (en) * 1996-07-17 1998-08-04 Advanced Micro Devices, Inc. Eliminating metal extrusions by controlling the liner deposition temperature
US5883002A (en) * 1996-08-29 1999-03-16 Winbond Electronics Corp. Method of forming contact profile by improving TEOS/BPSG selectivity for manufacturing a semiconductor device
JP3305211B2 (en) 1996-09-10 2002-07-22 松下電器産業株式会社 Semiconductor device and manufacturing method thereof
JPH10163192A (en) * 1996-10-03 1998-06-19 Fujitsu Ltd Semiconductor device and its manufacture
US5854503A (en) * 1996-11-19 1998-12-29 Integrated Device Technology, Inc. Maximization of low dielectric constant material between interconnect traces of a semiconductor circuit
US5953635A (en) 1996-12-19 1999-09-14 Intel Corporation Interlayer dielectric with a composite dielectric stack
US5985770A (en) 1997-08-21 1999-11-16 Micron Technology, Inc. Method of depositing silicon oxides
TW386295B (en) * 1997-11-15 2000-04-01 Mosel Vitelic Inc Method for forming vias in inter metal dielectric containing spin on glass layer
EP0948035A1 (en) * 1998-03-19 1999-10-06 Applied Materials, Inc. Method for applying a dielectric cap film to a dielectric stack
US6121130A (en) * 1998-11-16 2000-09-19 Chartered Semiconductor Manufacturing Ltd. Laser curing of spin-on dielectric thin films
US6787339B1 (en) 2000-10-02 2004-09-07 Motorola, Inc. Microfluidic devices having embedded metal conductors and methods of fabricating said devices
US6340628B1 (en) * 2000-12-12 2002-01-22 Novellus Systems, Inc. Method to deposit SiOCH films with dielectric constant below 3.0
DE10146146B4 (en) 2001-09-19 2004-02-05 Infineon Technologies Ag Method for electrical insulation of adjacent metallic conductor tracks and semiconductor component with mutually insulated metallic conductor tracks
US6500770B1 (en) * 2002-04-22 2002-12-31 Taiwan Semiconductor Manufacturing Company, Ltd Method for forming a multi-layer protective coating over porous low-k material
US7632548B2 (en) * 2002-08-02 2009-12-15 Applied Nanotech Holdings, Inc. Remote identification of explosives and other harmful materials
US7674628B2 (en) * 2003-08-01 2010-03-09 Applied Nanotech Holdings, Inc. Remote identification of explosives and other harmful materials
US7101754B2 (en) * 2004-06-10 2006-09-05 Dalsa Semiconductor Inc. Titanium silicate films with high dielectric constant
US7678593B1 (en) * 2006-09-06 2010-03-16 The United States of America, as represented by the Director, National Security Agency Method of fabricating optical device using multiple sacrificial spacer layers

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US4962063A (en) * 1988-11-10 1990-10-09 Applied Materials, Inc. Multistep planarized chemical vapor deposition process with the use of low melting inorganic material for flowing while depositing

Also Published As

Publication number Publication date
KR930702783A (en) 1993-09-09
DE69115498D1 (en) 1996-01-25
KR100213693B1 (en) 1999-08-02
EP0551306A1 (en) 1993-07-21
CA2026605C (en) 2001-07-17
DE69115498T2 (en) 1996-08-22
JPH06504406A (en) 1994-05-19
US5457073A (en) 1995-10-10
EP0551306B1 (en) 1995-12-13
WO1992006492A1 (en) 1992-04-16

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