CA2051103A1 - High Speed Complementary Field Effect Transistor Logic Circuits - Google Patents

High Speed Complementary Field Effect Transistor Logic Circuits

Info

Publication number
CA2051103A1
CA2051103A1 CA2051103A CA2051103A CA2051103A1 CA 2051103 A1 CA2051103 A1 CA 2051103A1 CA 2051103 A CA2051103 A CA 2051103A CA 2051103 A CA2051103 A CA 2051103A CA 2051103 A1 CA2051103 A1 CA 2051103A1
Authority
CA
Canada
Prior art keywords
fet
conductivity type
inverter
complementary
high speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2051103A
Other languages
French (fr)
Other versions
CA2051103C (en
Inventor
Albert W. Vinal
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HSM PORTFOLIO LLC
Original Assignee
Albert W. Vinal
Thunderbird Technologies, Inc.
Hsm Portfolio Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23324152&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CA2051103(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Albert W. Vinal, Thunderbird Technologies, Inc., Hsm Portfolio Llc filed Critical Albert W. Vinal
Publication of CA2051103A1 publication Critical patent/CA2051103A1/en
Application granted granted Critical
Publication of CA2051103C publication Critical patent/CA2051103C/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01721—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by means of a pull-up or down element
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
    • H03K19/09482—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors using a combination of enhancement and depletion transistors
    • H03K19/09485—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors using a combination of enhancement and depletion transistors with active depletion transistors

Abstract

A high speed, high density, low power dissipation all parallel FET logic circuit includes a driving stage having a plurality of parallel FETs of a first conductivity type for receiving logic input signals and a load FET of second conductivity type connected to the common output of the driving stage. A complementary FET inverter including serially connected FETs of first and second conductivity type is connected to the common output and the load FET. According to the invention the voltage transfer function of the complementary inverter is skewed so that the product of the carrier mobility and the ratio of channel width to length of the inverter FET of the first conductivity type is made substantially greater than the product of the carrier mobility and the ratio of channel width to length of the inverter FET of the second conductivity type. By skewing the voltage transfer function of the complementary inverter the voltage lift-off interval is dramatically decreased, thereby improving the speed. AND and OR circuits and combined AND-OR circuits may be provided, having true and complement outputs. A multigate serial load transistor may further reduce power consumption.
CA002051103A 1989-04-14 1990-04-10 High speed complementary field effect transistor logic circuits Expired - Lifetime CA2051103C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US338,280 1989-04-14
US07/338,280 US5001367A (en) 1989-04-14 1989-04-14 High speed complementary field effect transistor logic circuits

Publications (2)

Publication Number Publication Date
CA2051103A1 true CA2051103A1 (en) 1990-10-15
CA2051103C CA2051103C (en) 1998-06-30

Family

ID=23324152

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002051103A Expired - Lifetime CA2051103C (en) 1989-04-14 1990-04-10 High speed complementary field effect transistor logic circuits

Country Status (8)

Country Link
US (1) US5001367A (en)
EP (1) EP0467971B1 (en)
JP (1) JP2839368B2 (en)
AT (1) ATE113146T1 (en)
AU (1) AU5523690A (en)
CA (1) CA2051103C (en)
DE (1) DE69013498T2 (en)
WO (1) WO1990013181A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5387827A (en) * 1990-01-20 1995-02-07 Hitachi, Ltd. Semiconductor integrated circuit having logic gates
US5247212A (en) * 1991-01-31 1993-09-21 Thunderbird Technologies, Inc. Complementary logic input parallel (clip) logic circuit family
JPH0685653A (en) * 1992-05-06 1994-03-25 Sgs Thomson Microelectron Inc Receiver circuit provided with bus keeper feature
US5307352A (en) * 1993-03-01 1994-04-26 Advanced Micro Devices, Inc. Switch matrix multiplexers
US5517133A (en) * 1993-07-14 1996-05-14 Sun Microsystems, Inc. Multiple-input OR-gate employing a sense amplifier
US5612638A (en) * 1994-08-17 1997-03-18 Microunity Systems Engineering, Inc. Time multiplexed ratioed logic
US5654651A (en) * 1994-10-18 1997-08-05 Hitachi, Ltd. CMOS static logic circuit
US5654652A (en) * 1995-09-27 1997-08-05 Cypress Semiconductor Corporation High-speed ratio CMOS logic structure with static and dynamic pullups and/or pulldowns using feedback
US5737270A (en) * 1996-07-15 1998-04-07 International Business Machines Corporation Precharged wordline decoder with locally-controlled clock
US8933746B1 (en) 2013-07-10 2015-01-13 Astronics Advanced Electronic Systems Corp. Parallel FET solid state relay utilizing commutation FETs

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3728556A (en) * 1971-11-24 1973-04-17 United Aircraft Corp Regenerative fet converter circuitry
US3911289A (en) * 1972-08-18 1975-10-07 Matsushita Electric Ind Co Ltd MOS type semiconductor IC device
US4053792A (en) * 1974-06-27 1977-10-11 International Business Machines Corporation Low power complementary field effect transistor (cfet) logic circuit
JPS5759689B2 (en) * 1974-09-30 1982-12-16 Citizen Watch Co Ltd
UST952012I4 (en) * 1976-01-20 1976-11-02
JPS5336167A (en) * 1976-09-16 1978-04-04 Nippon Telegr & Teleph Corp <Ntt> Logical operation circuit
US4080539A (en) * 1976-11-10 1978-03-21 Rca Corporation Level shift circuit
US4216390A (en) * 1978-10-04 1980-08-05 Rca Corporation Level shift circuit
US4258272A (en) * 1979-03-19 1981-03-24 National Semiconductor Corporation TTL to CMOS input buffer circuit
IT1139929B (en) * 1981-02-06 1986-09-24 Rca Corp PULSE GENERATOR CIRCUIT USING A CURRENT SOURCE
US4390988A (en) * 1981-07-14 1983-06-28 Rockwell International Corporation Efficient means for implementing many-to-one multiplexing logic in CMOS/SOS
US4491741A (en) * 1983-04-14 1985-01-01 Motorola, Inc. Active pull-up circuit
US4567385A (en) * 1983-06-22 1986-01-28 Harris Corporation Power switched logic gates
JPS60236322A (en) * 1984-05-09 1985-11-25 Mitsubishi Electric Corp Mos transistor circuit
US4649296A (en) * 1984-07-13 1987-03-10 At&T Bell Laboratories Synthetic CMOS static logic gates
DE3511625A1 (en) * 1985-03-29 1986-10-02 Siemens AG, 1000 Berlin und 8000 München Hard-wired OR-arrangement
US4785204A (en) * 1985-06-21 1988-11-15 Mitsubishi Denki Kabushiki Kaisha Coincidence element and a data transmission path
US4810906A (en) * 1985-09-25 1989-03-07 Texas Instruments Inc. Vertical inverter circuit
US4764691A (en) * 1985-10-15 1988-08-16 American Microsystems, Inc. CMOS programmable logic array using NOR gates for clocking
US4645952A (en) * 1985-11-14 1987-02-24 Thomson Components-Mostek Corporation High speed NOR gate
US4701643A (en) * 1986-03-24 1987-10-20 Ford Microelectronics, Inc. FET gate current limiter circuits
US4701642A (en) * 1986-04-28 1987-10-20 International Business Machines Corporation BICMOS binary logic circuits
US4798979A (en) * 1986-09-23 1989-01-17 Honeywell Inc. Schottky diode logic for E-mode FET/D-mode FET VLSI circuits
US4877976A (en) * 1987-03-13 1989-10-31 Gould Inc. Cascade FET logic circuits
US4990974A (en) 1989-03-02 1991-02-05 Thunderbird Technologies, Inc. Fermi threshold field effect transistor

Also Published As

Publication number Publication date
US5001367A (en) 1991-03-19
WO1990013181A1 (en) 1990-11-01
CA2051103C (en) 1998-06-30
ATE113146T1 (en) 1994-11-15
EP0467971B1 (en) 1994-10-19
EP0467971A1 (en) 1992-01-29
JPH05504661A (en) 1993-07-15
AU5523690A (en) 1990-11-16
DE69013498D1 (en) 1994-11-24
DE69013498T2 (en) 1995-03-30
JP2839368B2 (en) 1998-12-16

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