CA2054404A1 - Vertical cavity surface emitting lasers with transparent electrodes - Google Patents

Vertical cavity surface emitting lasers with transparent electrodes

Info

Publication number
CA2054404A1
CA2054404A1 CA2054404A CA2054404A CA2054404A1 CA 2054404 A1 CA2054404 A1 CA 2054404A1 CA 2054404 A CA2054404 A CA 2054404A CA 2054404 A CA2054404 A CA 2054404A CA 2054404 A1 CA2054404 A1 CA 2054404A1
Authority
CA
Canada
Prior art keywords
surface emitting
cavity surface
emitting lasers
vertical cavity
transparent electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2054404A
Other languages
French (fr)
Other versions
CA2054404C (en
Inventor
Rose Fasano Kopf
Henry Miles O'bryan Jr
Erdmann Frederick Schubert
Li-Wei Tu
George John Zydzik
Yeong-Her Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Rose Fasano Kopf
Henry Miles O'bryan Jr
Erdmann Frederick Schubert
Li-Wei Tu
George John Zydzik
Yeong-Her Wang
American Telephone And Telegraph Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rose Fasano Kopf, Henry Miles O'bryan Jr, Erdmann Frederick Schubert, Li-Wei Tu, George John Zydzik, Yeong-Her Wang, American Telephone And Telegraph Company filed Critical Rose Fasano Kopf
Publication of CA2054404A1 publication Critical patent/CA2054404A1/en
Application granted granted Critical
Publication of CA2054404C publication Critical patent/CA2054404C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06216—Pulse modulation or generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

VERTICAL CAVITY SURFACE EMITTING LASERS
WITH TRANSPARENT ELECTRODES
Abstract Optically transparent and electrically conductive cadmium tin oxide or indium tin oxide is employed in vertical cavity surface emitting lasers for vertical current injection. Continuous wave lasing at room temperature is achieved in GaAs/AlGaAsquantum well lasers. Devices with a 10µm optical window which also serves as a vertical current injection inlet give lasing threshold currents as low as 3.8mA. The differential series resistance is (350-450).OMEGA. with a diode voltage of (5.1-5.6)V at the lasing threshold. Far field pattern of the laser emission is Gaussian-like with a full width at half maximum of 7°.
CA002054404A 1991-01-03 1991-10-29 Vertical cavity surface emitting lasers with transparent electrodes Expired - Fee Related CA2054404C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/637,245 US5115441A (en) 1991-01-03 1991-01-03 Vertical cavity surface emmitting lasers with transparent electrodes
US637,245 1991-01-03

Publications (2)

Publication Number Publication Date
CA2054404A1 true CA2054404A1 (en) 1992-07-04
CA2054404C CA2054404C (en) 1994-03-08

Family

ID=24555144

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002054404A Expired - Fee Related CA2054404C (en) 1991-01-03 1991-10-29 Vertical cavity surface emitting lasers with transparent electrodes

Country Status (9)

Country Link
US (1) US5115441A (en)
EP (1) EP0497052B1 (en)
JP (1) JP2975201B2 (en)
KR (1) KR0127911B1 (en)
CA (1) CA2054404C (en)
DE (1) DE69104342T2 (en)
HK (1) HK188895A (en)
SG (1) SG28332G (en)
TW (1) TW212255B (en)

Families Citing this family (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100274283B1 (en) * 1991-03-28 2001-01-15 야스카와 히데아키 Surface-emitting semiconductor laser and its manufacturing method
US5258990A (en) * 1991-11-07 1993-11-02 The United States Of America As Represented By The Secretary Of The United States Department Of Energy Visible light surface emitting semiconductor laser
US5226053A (en) * 1991-12-27 1993-07-06 At&T Bell Laboratories Light emitting diode
US5212703A (en) * 1992-02-18 1993-05-18 Eastman Kodak Company Surface emitting lasers with low resistance bragg reflectors
US5258316A (en) * 1992-03-26 1993-11-02 Motorola, Inc. Patterened mirror vertical cavity surface emitting laser
US5256596A (en) * 1992-03-26 1993-10-26 Motorola, Inc. Top emitting VCSEL with implant
US5245622A (en) * 1992-05-07 1993-09-14 Bandgap Technology Corporation Vertical-cavity surface-emitting lasers with intra-cavity structures
US5293392A (en) * 1992-07-31 1994-03-08 Motorola, Inc. Top emitting VCSEL with etch stop layer
US5317587A (en) * 1992-08-06 1994-05-31 Motorola, Inc. VCSEL with separate control of current distribution and optical mode
US5343487A (en) * 1992-10-01 1994-08-30 Optical Concepts, Inc. Electrical pumping scheme for vertical-cavity surface-emitting lasers
JP2797883B2 (en) * 1993-03-18 1998-09-17 株式会社日立製作所 Multicolor light emitting device and its substrate
US5345462A (en) * 1993-03-29 1994-09-06 At&T Bell Laboratories Semiconductor surface emitting laser having enhanced polarization control and transverse mode selectivity
US5643369A (en) * 1993-06-24 1997-07-01 Fuji Xerox Co., Ltd. Photoelectric conversion element having an infrared transmissive indium-tin oxide film
US5323416A (en) * 1993-08-20 1994-06-21 Bell Communications Research, Inc. Planarized interference mirror
US5388120A (en) * 1993-09-21 1995-02-07 Motorola, Inc. VCSEL with unstable resonator
US5546209A (en) * 1994-03-11 1996-08-13 University Of Southern California One-to-many simultaneous and reconfigurable optical two-dimensional plane interconnections using multiple wavelength, vertical cavity, surface-emitting lasers and wavelength-dependent detector planes
GB2295269A (en) * 1994-11-14 1996-05-22 Sharp Kk Resonant cavity laser having oxide spacer region
US5530715A (en) * 1994-11-29 1996-06-25 Motorola, Inc. Vertical cavity surface emitting laser having continuous grading
US5493577A (en) * 1994-12-21 1996-02-20 Sandia Corporation Efficient semiconductor light-emitting device and method
US5627854A (en) * 1995-03-15 1997-05-06 Lucent Technologies Inc. Saturable bragg reflector
US5513204A (en) * 1995-04-12 1996-04-30 Optical Concepts, Inc. Long wavelength, vertical cavity surface emitting laser with vertically integrated optical pump
US5625617A (en) * 1995-09-06 1997-04-29 Lucent Technologies Inc. Near-field optical apparatus with a laser having a non-uniform emission face
US5724376A (en) * 1995-11-30 1998-03-03 Hewlett-Packard Company Transparent substrate vertical cavity surface emitting lasers fabricated by semiconductor wafer bonding
US5719891A (en) * 1995-12-18 1998-02-17 Picolight Incorporated Conductive element with lateral oxidation barrier
US6304588B1 (en) * 1997-02-07 2001-10-16 Xerox Corporation Method and structure for eliminating polarization instability in laterally-oxidized VCSELs
US5978408A (en) * 1997-02-07 1999-11-02 Xerox Corporation Highly compact vertical cavity surface emitting lasers
AU9472298A (en) 1997-09-05 1999-03-22 Micron Optics, Inc. Tunable fiber fabry-perot surface-emitting lasers
US6026111A (en) * 1997-10-28 2000-02-15 Motorola, Inc. Vertical cavity surface emitting laser device having an extended cavity
US5960024A (en) 1998-03-30 1999-09-28 Bandwidth Unlimited, Inc. Vertical optical cavities produced with selective area epitaxy
US6493372B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6487231B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6535541B1 (en) 1998-04-14 2003-03-18 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6487230B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6493371B1 (en) 1998-04-14 2002-12-10 Bandwidth9, Inc. Vertical cavity apparatus with tunnel junction
US6760357B1 (en) 1998-04-14 2004-07-06 Bandwidth9 Vertical cavity apparatus with tunnel junction
US5991326A (en) 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
US6493373B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
JP3697903B2 (en) * 1998-07-06 2005-09-21 富士ゼロックス株式会社 Surface emitting laser and surface emitting laser array
US6144682A (en) * 1998-10-29 2000-11-07 Xerox Corporation Spatial absorptive and phase shift filter layer to reduce modal reflectivity for higher order modes in a vertical cavity surface emitting laser
US6845118B1 (en) * 1999-01-25 2005-01-18 Optical Communication Products, Inc. Encapsulated optoelectronic devices with controlled properties
GB2346258A (en) * 1999-01-30 2000-08-02 Mitel Semiconductor Ab Monitoring the light output of surface emitting lasers
US6226425B1 (en) 1999-02-24 2001-05-01 Bandwidth9 Flexible optical multiplexer
US6852968B1 (en) * 1999-03-08 2005-02-08 Canon Kabushiki Kaisha Surface-type optical apparatus
GB2349739A (en) * 1999-04-12 2000-11-08 Mitel Semiconductor Ab Vertical cavity surface emitting lasers
US6275513B1 (en) 1999-06-04 2001-08-14 Bandwidth 9 Hermetically sealed semiconductor laser device
US6233263B1 (en) 1999-06-04 2001-05-15 Bandwidth9 Monitoring and control assembly for wavelength stabilized optical system
US20020048301A1 (en) * 1999-07-30 2002-04-25 Peidong Wang Single mode operation of microelectromechanically tunable, half-symmetric, vertical cavity surface emitting lasers
US6577658B1 (en) * 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
JP2001223384A (en) * 2000-02-08 2001-08-17 Toshiba Corp Semiconductor light-emitting element
US6744805B2 (en) * 2000-04-05 2004-06-01 Nortel Networks Limited Single mode operation of microelectromechanically tunable, half-symmetric, vertical cavity surface emitting lasers
KR100708081B1 (en) * 2000-05-18 2007-04-16 삼성전자주식회사 Apparatus and method for manufacturing oxide aperture of VCSEL
DE10026262B4 (en) * 2000-05-26 2005-03-17 Osram Opto Semiconductors Gmbh Vertical resonator laser diode (VCSEL)
NL1015714C2 (en) * 2000-07-14 2002-01-15 Dsm Nv Process for crystallizing enantiomerically enriched 2-acetylthio-3-phenylpropanoic acid.
US6548835B1 (en) 2000-11-02 2003-04-15 U-L-M Photonics Gmbh Optoelectronic device having a highly conductive carrier tunneling current aperture
US6570905B1 (en) 2000-11-02 2003-05-27 U-L-M Photonics Gmbh Vertical cavity surface emitting laser with reduced parasitic capacitance
US6639932B1 (en) * 2001-03-16 2003-10-28 Coretek, Inc. Vertical-cavity surface-emitting laser (VCSEL) with cavity compensated gain
US6975661B2 (en) 2001-06-14 2005-12-13 Finisar Corporation Method and apparatus for producing VCSELS with dielectric mirrors and self-aligned gain guide
DE10129616A1 (en) * 2001-06-20 2003-01-09 Infineon Technologies Ag Solid state laser based upon a pair of coupled lasers and a means for coupling emissions
GB2379797A (en) * 2001-09-15 2003-03-19 Zarlink Semiconductor Ab Surface Emitting Laser
US6795478B2 (en) * 2002-03-28 2004-09-21 Applied Optoelectronics, Inc. VCSEL with antiguide current confinement layer
US6890781B2 (en) * 2002-06-25 2005-05-10 Uni Light Technology Inc. Transparent layer of a LED device and the method for growing the same
US6904206B2 (en) * 2002-10-15 2005-06-07 Micron Optics, Inc. Waferless fiber Fabry-Perot filters
EP1583989A4 (en) * 2002-12-20 2006-07-05 Micron Optics Inc Temperature compensated ferrule holder for a fiber fabry-perot filter
US20040213312A1 (en) * 2003-04-25 2004-10-28 Tan Michael R. Semiconductor laser having improved high-frequency, large signal response at reduced operating current
US7075962B2 (en) * 2003-06-27 2006-07-11 Finisar Corporation VCSEL having thermal management
US7054345B2 (en) * 2003-06-27 2006-05-30 Finisar Corporation Enhanced lateral oxidation
JP2005123416A (en) * 2003-10-17 2005-05-12 Ricoh Co Ltd Surface emitting laser element and manufacturing method thereof, and surface emitting laser array and optical transmission system
US7218660B2 (en) * 2003-10-27 2007-05-15 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Single-mode vertical cavity surface emitting lasers and methods of making the same
US20050201436A1 (en) * 2004-03-15 2005-09-15 Doug Collins Method for processing oxide-confined VCSEL semiconductor devices
US20060029112A1 (en) * 2004-03-31 2006-02-09 Young Ian A Surface emitting laser with an integrated absorber
JP2005311089A (en) * 2004-04-22 2005-11-04 Fuji Xerox Co Ltd Vertical resonator type surface-emitting semiconductor laser device
US20050243881A1 (en) * 2004-04-30 2005-11-03 Hoki Kwon InAlAs having enhanced oxidation rate grown under very low V/III ratio
JP4747516B2 (en) * 2004-06-08 2011-08-17 富士ゼロックス株式会社 Vertical cavity surface emitting semiconductor laser device
US7564887B2 (en) * 2004-06-30 2009-07-21 Finisar Corporation Long wavelength vertical cavity surface emitting lasers
US7400665B2 (en) * 2004-11-05 2008-07-15 Hewlett-Packard Developement Company, L.P. Nano-VCSEL device and fabrication thereof using nano-colonnades
US20070188951A1 (en) * 2006-02-10 2007-08-16 Crews Darren S Optoelectronic device ESD protection
US7483212B2 (en) * 2006-10-11 2009-01-27 Rensselaer Polytechnic Institute Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same
TW200834969A (en) * 2007-02-13 2008-08-16 Epistar Corp Light-emitting diode and method for manufacturing the same
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
CN205944139U (en) 2016-03-30 2017-02-08 首尔伟傲世有限公司 Ultraviolet ray light -emitting diode spare and contain this emitting diode module
US10714893B2 (en) * 2017-07-17 2020-07-14 Thorlabs, Inc. Mid-infrared vertical cavity laser
WO2019204390A1 (en) 2018-04-17 2019-10-24 Smartflow Technologies, Inc. Filter cassette article, and filter comprising same
US11025033B2 (en) 2019-05-21 2021-06-01 Taiwan Semiconductor Manufacturing Co., Ltd. Bump bonding structure to mitigate space contamination for III-V dies and CMOS dies
CN111817129A (en) * 2020-08-31 2020-10-23 江西铭德半导体科技有限公司 VCSEL chip and manufacturing method thereof
CN113206446A (en) * 2021-04-30 2021-08-03 厦门大学 Method for manufacturing nitride vertical cavity surface emitting laser based on conductive oxide DBR

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4495514A (en) * 1981-03-02 1985-01-22 Eastman Kodak Company Transparent electrode light emitting diode and method of manufacture
JPS6081888A (en) * 1983-10-12 1985-05-09 Rohm Co Ltd Surface light emitting laser and manufacture thereof
JPS6097684A (en) * 1983-10-31 1985-05-31 Rohm Co Ltd Surface luminous laser and manufacture thereof
JPH01264285A (en) * 1988-04-15 1989-10-20 Omron Tateisi Electron Co Surface light-emitting type semiconductor laser
JPS6446996A (en) * 1988-08-03 1989-02-21 Agency Ind Science Techn Method for realizing optical bistable function and optical bistable function element
US4873696A (en) * 1988-10-31 1989-10-10 The Regents Of The University Of California Surface-emitting lasers with periodic gain and a parallel driven nipi structure
US5018157A (en) * 1990-01-30 1991-05-21 At&T Bell Laboratories Vertical cavity semiconductor lasers
US5012486A (en) * 1990-04-06 1991-04-30 At&T Bell Laboratories Vertical cavity semiconductor laser with lattice-mismatched mirror stack

Also Published As

Publication number Publication date
CA2054404C (en) 1994-03-08
DE69104342D1 (en) 1994-11-03
JPH04276681A (en) 1992-10-01
HK188895A (en) 1995-12-22
US5115441A (en) 1992-05-19
TW212255B (en) 1993-09-01
SG28332G (en) 1995-09-01
EP0497052B1 (en) 1994-09-28
KR920015668A (en) 1992-08-27
JP2975201B2 (en) 1999-11-10
KR0127911B1 (en) 1998-04-07
DE69104342T2 (en) 1995-02-16
EP0497052A1 (en) 1992-08-05

Similar Documents

Publication Publication Date Title
CA2054404A1 (en) Vertical cavity surface emitting lasers with transparent electrodes
CA2034987A1 (en) Front surface emitting diode laser
US6396860B1 (en) Organic semiconductor laser
DE69105037T2 (en) Surface emitting lasers with a vertical resonator and conductive mirrors.
DE69301821T2 (en) II-VI LASER DIODE WITH SINGLE QUANTUM WELL WITHOUT SHEET LAYERS
EP0292957B1 (en) Temperature stabilization of laser diodes and light emitting diodes
AU2902689A (en) Current injection laser
JP2784025B2 (en) Optical scanning device
JPS56106259A (en) Control device for quantity of light
US5315105A (en) Optical operational memory device
KR930024241A (en) Semiconductor laser device and manufacturing method thereof
JPS6455884A (en) Laser-diode driving circuit
JPS6476784A (en) Edge light-emitting diode
Zutavern et al. Optically controlled current filamentation in GaAs photoconductive semiconductor switches
HIROYUKI Beam scanning type semiconductor laser
JPS58153378A (en) Optical bistable device
KR950004665A (en) Semiconductor laser
JPS6246290Y2 (en)
RU1804667C (en) Photon-injection thyristor
HARDING et al. Low divergence laser
JP2516980B2 (en) Optical matrix switch
TATSUYUKI Optical bistable semiconductor laser
Lear et al. High efficiency oxide confined vertical cavity surface emitting lasers
GARCIA et al. Semiconductor laser end-facet coatings for use in solid or liquid environments(Patent)
SHINADA Optical semiconductor device

Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed