CA2096455A1 - Fabry-perot with coated mirrors - Google Patents
Fabry-perot with coated mirrorsInfo
- Publication number
- CA2096455A1 CA2096455A1 CA002096455A CA2096455A CA2096455A1 CA 2096455 A1 CA2096455 A1 CA 2096455A1 CA 002096455 A CA002096455 A CA 002096455A CA 2096455 A CA2096455 A CA 2096455A CA 2096455 A1 CA2096455 A1 CA 2096455A1
- Authority
- CA
- Canada
- Prior art keywords
- fabry
- perot
- dielectric coating
- mirrors
- gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000576 coating method Methods 0.000 claims abstract description 37
- 239000011248 coating agent Substances 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 23
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000005083 Zinc sulfide Substances 0.000 claims abstract description 5
- 229910052984 zinc sulfide Inorganic materials 0.000 claims abstract description 5
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims abstract description 5
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims abstract description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims abstract description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000004408 titanium dioxide Substances 0.000 claims abstract description 4
- 230000003287 optical effect Effects 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 6
- QCCDYNYSHILRDG-UHFFFAOYSA-K cerium(3+);trifluoride Chemical compound [F-].[F-].[F-].[Ce+3] QCCDYNYSHILRDG-UHFFFAOYSA-K 0.000 claims description 3
- 229910001610 cryolite Inorganic materials 0.000 claims description 3
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 3
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 3
- 229920000620 organic polymer Polymers 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 abstract description 14
- 229910052751 metal Inorganic materials 0.000 abstract description 13
- 239000002184 metal Substances 0.000 abstract description 13
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 abstract description 11
- 230000002411 adverse Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 5
- 150000002736 metal compounds Chemical class 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000002835 absorbance Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- JHQVCQDWGSXTFE-UHFFFAOYSA-N 2-(2-prop-2-enoxycarbonyloxyethoxy)ethyl prop-2-enyl carbonate Chemical compound C=CCOC(=O)OCCOCCOC(=O)OCC=C JHQVCQDWGSXTFE-UHFFFAOYSA-N 0.000 description 1
- 241000168036 Populus alba Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- -1 sodium aluminum fluoride compound Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/12—Generating the spectrum; Monochromators
- G01J3/26—Generating the spectrum; Monochromators using multiple reflection, e.g. Fabry-Perot interferometer, variable interference filters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/284—Interference filters of etalon type comprising a resonant cavity other than a thin solid film, e.g. gas, air, solid plates
Abstract
ABSTRACT OF THE DISCLOSURE
In a Fabry-Perot etalon or interferometer the metal mirrors are each provided with a dielectric coating on the side facing away from the enclosed gap. The dielectric coating leads to the advantage of peak transmittance being improved without the finesse being adversely affected. The dielectric coating is transparent for the wavelength (.lambda.) used and, preferably, has a thickness of about 0.25.lambda./n, n being the refractive index of the dielectric coating material. The coating, preferably, is of a material having a high index of refraction, examples thereof including zirconium dioxide, titanium dioxide, zinc sulfide, or zinc selenide.
In a Fabry-Perot etalon or interferometer the metal mirrors are each provided with a dielectric coating on the side facing away from the enclosed gap. The dielectric coating leads to the advantage of peak transmittance being improved without the finesse being adversely affected. The dielectric coating is transparent for the wavelength (.lambda.) used and, preferably, has a thickness of about 0.25.lambda./n, n being the refractive index of the dielectric coating material. The coating, preferably, is of a material having a high index of refraction, examples thereof including zirconium dioxide, titanium dioxide, zinc sulfide, or zinc selenide.
Description
FABRY-PEROT WITH COATED MIRRORS
The invention pertains to Fabry-Perot etalons and interferometers, hereinafter referred to as "Fabry-Perots"
for s]hort.
Fabry-Perots are well-known and important optical 6 devices. They may be used as a true interferometer, (e.g., for spectroscopy), as a laser cavity or, more particulaxly, as an insert in the laser cavity of a single mode laser.
Currently, Fabry-Perots are also being suggested as reflection or transmission modulators for ~ptical interconnects.
12 A Fabry-Perot commonly comprises two reflective surfaces (the "mirrors") separated by a determined optical path length (the "gap"). In a Fabry-Perot interferometer the gap enclosed by the mirrors usually comprises air and can be mechanically varied, e.g. by moving one of the mirrors. In a Fabry-Perot etalon the mirrors are usually held fixed, for 18 example by means of a spacer, for which, for example, quartz, or glass is commonly used. Common gap widths for an interferometer vary from several millimeters to several centimeters. Considerably greater gap widths are customary when a Fabry-Perot is employed as a laser resonant cavity.
For~some applications, including modulators, gap widths may 24 be of the order of one to several micrometers.
In general, two types of mirrors are used in Fabry-Perots, namely, so-called quarter-wave stacks (QWS~ of a material that would not exhibit substantial reflectance as a single layer, or mirrors comprising a single layer of a material that is in itself reflecting, usually comprising metal or metal compounds. The mirrors frequently are plane parallel, but curved-mirror systems are also known, notably as laser cavities and as spectrum analyzers.
The invention pertains to Fabry-Perot etalons and interferometers, hereinafter referred to as "Fabry-Perots"
for s]hort.
Fabry-Perots are well-known and important optical 6 devices. They may be used as a true interferometer, (e.g., for spectroscopy), as a laser cavity or, more particulaxly, as an insert in the laser cavity of a single mode laser.
Currently, Fabry-Perots are also being suggested as reflection or transmission modulators for ~ptical interconnects.
12 A Fabry-Perot commonly comprises two reflective surfaces (the "mirrors") separated by a determined optical path length (the "gap"). In a Fabry-Perot interferometer the gap enclosed by the mirrors usually comprises air and can be mechanically varied, e.g. by moving one of the mirrors. In a Fabry-Perot etalon the mirrors are usually held fixed, for 18 example by means of a spacer, for which, for example, quartz, or glass is commonly used. Common gap widths for an interferometer vary from several millimeters to several centimeters. Considerably greater gap widths are customary when a Fabry-Perot is employed as a laser resonant cavity.
For~some applications, including modulators, gap widths may 24 be of the order of one to several micrometers.
In general, two types of mirrors are used in Fabry-Perots, namely, so-called quarter-wave stacks (QWS~ of a material that would not exhibit substantial reflectance as a single layer, or mirrors comprising a single layer of a material that is in itself reflecting, usually comprising metal or metal compounds. The mirrors frequently are plane parallel, but curved-mirror systems are also known, notably as laser cavities and as spectrum analyzers.
2 ~ '3 The invention pertains to Fabry~Perots of the type comprising two mirrors of a reflecting material, such as metal. As is apparent from the above, the inner surfaces of the mirrors are separated from each other to form the gap, the gap width optionally being fixed.
6 British Patent No. 2,082,380 discloses a Fabry-Perot etalon of this type used in a semiconductor injection laser.
The Fabry-Perot is provided with a quarter-wavelength anti-reflection layer on the inner surface of one of the mirrors in order to broaden the spectral emission, to increase the range of single mode operation, and to reduce spread on the 12 far-field pattern. The inner surface of the other mirror is optionally coated with a half-wavelength layer.
In Annales de Phvsiq~ 6 (1951), pages 5 and following, Fabry-Perots are disclosed, the metal mirrors of which are provided with a dielectric layer on the side facing the gap.
In the disclosure it is concluded that a single dielectric 18 layer is unsuitable to significantly improve the reflectance of a Fabry-Perot.
European Patent Publication No. 371,695 pertains to a spatial light modulator on the basis of a QWS Fabry-Perot in which the gap comprises a liquid crystal layer and which Fabry-Perot includes metal electrodes. The mirrors in this 24 device are dielectric multilayer films, namely, quarter wave stacks.
QWS Fabry-Perots have also been disclosed in such representative references as Thin Solid Films Vol.137, No.2, pages 161-168 tl968) and Optik, Vol.50, No.4, pages 329-340 (1978)-The state of~ithe art further includes the common knowledge which exists in regard to Fabry-Perots. The original interferometer of this type developed by C. Fabry and A. Perot, for instance, comprises two transparent (glass or quartz) plates with planar surfaces. The inner surfaces ~ ~ 9 ~ 4 .~ ~
_ 3 _ AEM 2310 are coated with partially transparent films of high ref:Lectivity and are parallel, enclosing an air gap. The transparent plates serve as a substrate for the reflecting coa1cing. These and other known Fabry-Perot mirrors commonly comprise a metal, such as gold, silver or aluminum, or a 6 metal compound, as a reflecting surface.
Naturally, the mirrors of a Fabry-Perot exhibit substantial reflectance, e.g. higher than 90%, but to a certain extent they also show transmittance. Further, mirrors comprised of a material that is in itself reflecting, notably metal mirrors, display absorption of incident light.
12 The mirror reflectivity being high, the reflectance and transmittance show a series of peaks as a function of the wavelength of the incident light. If the mirror separation is much larger than the wavelength (which is usually the case) the peaks are approximately periodical in the wave-length. The ratio of the distance separating subsequent 18 peaks (the frez spectral range, or FSR) to the full-width at half maximum of the peaks is frequently used to specify the quality of a Fabry-Perot. Said ratio is a dimensionless quantity called the "finesse". For many applications a high finesse is desirable.
In order to achieve a high finesse, a high reflectance 24 is generally required. In the case of Fabry-Perots of the type having mirrors comprising metal or metal compounds, increased reflectance usually is attended with increased absorbance. Consequently, in Fabry-Perots of the present type the demand of high finesse competes with that of high peak transmittance~ It is therefore desired to improve Fabry-Perots with respect to peak transmittance, without the finesse being adversely affectea.
It is an object of the present invention to provide a Fabry-Perot of the aforementioned type containing mirrors of material that is in itself reflecting, such as metal or metal 2 3 ~
compounds, which exhibits improved transmittance while retaining a high finesse. It is a further object of the invention to provide a Fabry-Perot of the type in which the mirrors are of a material that in itself is reflecting, such as ~etal, which allows improved finesse while retaining good 6 transmittance. Still another object of the invention is to provide a metal mirrors-containing Fabry-Perot that simultaneously displays improved transmittance and a higher finesse.
The invention consists in that in a Fabry-Perot of the type described above the mirrors are each provided with a 12 dielectric coating on the side facing away from the gap.
The dielectric coating may be seen as an analogue of an anti-reflection coating such as is commonly applied to the elements of optical instruments, but has a quite different function. In this respect, it should be clearly recognized that the use of such an anti-reflection coating on the outer 18 surface of the mirrors leads to the desired advantages, whilst the working area of the Fabry-Perot (to which the advantages apply) is within the gap, namely, on the inside of the mirrors.
The dielectric coating should be substantially transparent for the wavelength used. The Fabry-Perots 24 according to the invention hereinafter described are suitable for use with light of any wavelength, A. In practice, this light may indeed be of a single wave-length but may also be polychxomatic. In the latter case, ~ indicates the average wavelength.
The dielectric coating will generally function well if it has a thickness of from about 0.1~/n to about 0.5~n, with n indicating the index of refraction of the dielectric material. Preferably, the dielectric coating has a thickness of about 0.25~/n. These thicknesses are to be understood as 2 ~ 9 ~ ~ 3j - 5 - ~EM ~310 comprising said range ~ one or more half wavelengths, as the effect attained is periodical, the period being 0.5~.
It should be noted that such Fabry-Perots according to the invention are clearly distinguished from Fabry-Perots having quarter-wave stacks as mirrors. As indicated above, 6 the present invention pertains to Fabry-Perots having mirrors comprising a reflecting material, namely, a material that is in itself reflecting, such as a metal or a metal compound.
The aforementioned problem that high peak-transmittance and high finesse are competing demands is due to the absorbance observed with mirrors comprising such a reflecting material, 12 and at any rate plays a less significant role in Fabry-Perots having quarter-wave stacks as mirrors. Such Fabry-Perots are outside the scope of the present invention and, besides, are more difficult to produce, as the manufacture process involves the deposition of a number of quarter-wave layers of two different refractive indices.
18 In the embodiment in which a Fabry-Perot according to the original construction of C. Fabry and A. Perot is used, namely, one having mirrors comprising a transparent substrate plate coated on the inside, namely, the side facing the gap, with reflecting material, the dielectric coating of the invention is applied between the reflecting material and the 2~ su~strate.
Suitable dielectric coatings include any inorganic, organic or polymeric materials which satisfy the main reguirement of being, for the wavelength used, a non-absorbing iayer with an index of refraction higher than the gap medium (air or glass, usually). Examples of inorganic materials are the well-known materials co~monly employed in anti-r!eflection coatings, such as cryolite ~a sodium aluminum fluoride compound), magnesium fluoride, cerium fluoride, or a mixture thereof. Examples of polymeric materials are, e.g., 2~9~
those used for optical lenses, such as diethylene glycol bis(allyl carbonate).
It has been found that the higher the refractive index of t]he dielectric coating, the better the Fabry-Perot according to the instant invention functions. Hence, 6 preferred dielectric coatings are those having a refractive index higher than 2Ø These materials are in fact known from the field of Fabry-Perots. They commonly constitute the high refractive index layers in the aforementioned quarter wave stacks. Preferred dielectric coatings, in this respect, comprise zirconium dioxide, titanium dioxide, zinc sulfide, 12 zinc selenide, or a mixture thereof.
It should be noted that, generally, it will be convenient to apply the same dielectric coating to the surfaces of both mirrors. However, each mirror may also be coated with a different dielectric coating.
The mere coating of the mirrors with dielectric layers, 18 under the conditions set forth above, suffices to enhance the peak-transmittance. For various applications a further enhancement is not necessary, or sometimes even undesirable.
~owever, if an optimum enhancement in peak-transmittance with retained finesse is desired, it is required that the thicXness of the mirrors be adapted to the presence of the ~4 dielectric coating in such manner that the reflectance inside the gap remains unchanged. It cannot be predicted in general terms whether, in a specific case, the desired adaption can be achieved by increasing or by decreasing the thickness.
However, the person of ordinary skill in the art may calculate this, using the theory of Abeles described in M.
Born and E. Wolf, "Principles of optics", Pergamon Press, Oxford, 4th edition, 1970, pages 51 and following and 611 and followi~g.
The further constituents of the Fabry-Perots according to the instant invention are customary. The gap may enclose 2a36~5 air, glass, quartz, or any other suitable material, such as a transparent organic polymer. If the Fabry-Perot is to be used as a transmission modulator for optical interconnects, the gap may comprise a non-linear optical (NLO) material, preferably an NLO polymer. NL0 materials are well-known in 6 the art and need no further elucidation here. Examples of suitable NL0 polymers are those described in European Patent Publication Nos. 350,112, 350,113! 358,476, 445,864, 378,185, and 359,648.
The mirrors may be of any suitable reflecting material, and are in themselves well-known. Common examples of such 12 materials include metals, more particularly gold, silver, or aluminum.
The invention will be further described hereinafter with reference to the following Examples which should be construed to be explanatory rather than limitative.
2 ~ CJ
COMPARATIVE EX~MPLE 1 The Fabry-Perot for comparison purposes was an etalon for use with a wavelength of about 514.5 nm comprising two plane parallel mirrors of silver enclosing a 1 mm gap which mirrors comprised glass having a refractive index of 1.55.
6 The thickness of the mirrors was 50 nm. No dielectric coating was present.
For a wavelength near 514.5 nm the Fabry-Perot etalon displayed a peak transmittance of 3.7% at a finesse of 20.
The exemplified Fabry-Perot was an etalon as described 12 in Comparative Example 1, above, with the mirrors being coated on the outer surfaces (namely, the surfaces pointing away from the gap) with a dielectric coating of zinc sulfide.
The thickness of the dielectric coating was 55.9 nm, its refractive index was 2.3, namely, the Fabry Perot etalon, in accordance with the invention, comprised a dielectric coating 18 of 0.25~/n.
For a wavelength near 514.5 nm the Fabry-Perot etalon displayed a peak transmittance of 9.7%, at a finesse of 21.
The Fabry-Perot exemplified here is an etalon as in Example 2, with the thickness of the mirrors being adjusted 24 to 47.8 nm, in order to have the same internal reflectance as the uncoated Fabry-Perot etalon of comparison.
For a wavelength near 514.5 nm the Fabry-Perot etalon displayed a peak transmittance of 12.5% at a finesse of 20.
6 British Patent No. 2,082,380 discloses a Fabry-Perot etalon of this type used in a semiconductor injection laser.
The Fabry-Perot is provided with a quarter-wavelength anti-reflection layer on the inner surface of one of the mirrors in order to broaden the spectral emission, to increase the range of single mode operation, and to reduce spread on the 12 far-field pattern. The inner surface of the other mirror is optionally coated with a half-wavelength layer.
In Annales de Phvsiq~ 6 (1951), pages 5 and following, Fabry-Perots are disclosed, the metal mirrors of which are provided with a dielectric layer on the side facing the gap.
In the disclosure it is concluded that a single dielectric 18 layer is unsuitable to significantly improve the reflectance of a Fabry-Perot.
European Patent Publication No. 371,695 pertains to a spatial light modulator on the basis of a QWS Fabry-Perot in which the gap comprises a liquid crystal layer and which Fabry-Perot includes metal electrodes. The mirrors in this 24 device are dielectric multilayer films, namely, quarter wave stacks.
QWS Fabry-Perots have also been disclosed in such representative references as Thin Solid Films Vol.137, No.2, pages 161-168 tl968) and Optik, Vol.50, No.4, pages 329-340 (1978)-The state of~ithe art further includes the common knowledge which exists in regard to Fabry-Perots. The original interferometer of this type developed by C. Fabry and A. Perot, for instance, comprises two transparent (glass or quartz) plates with planar surfaces. The inner surfaces ~ ~ 9 ~ 4 .~ ~
_ 3 _ AEM 2310 are coated with partially transparent films of high ref:Lectivity and are parallel, enclosing an air gap. The transparent plates serve as a substrate for the reflecting coa1cing. These and other known Fabry-Perot mirrors commonly comprise a metal, such as gold, silver or aluminum, or a 6 metal compound, as a reflecting surface.
Naturally, the mirrors of a Fabry-Perot exhibit substantial reflectance, e.g. higher than 90%, but to a certain extent they also show transmittance. Further, mirrors comprised of a material that is in itself reflecting, notably metal mirrors, display absorption of incident light.
12 The mirror reflectivity being high, the reflectance and transmittance show a series of peaks as a function of the wavelength of the incident light. If the mirror separation is much larger than the wavelength (which is usually the case) the peaks are approximately periodical in the wave-length. The ratio of the distance separating subsequent 18 peaks (the frez spectral range, or FSR) to the full-width at half maximum of the peaks is frequently used to specify the quality of a Fabry-Perot. Said ratio is a dimensionless quantity called the "finesse". For many applications a high finesse is desirable.
In order to achieve a high finesse, a high reflectance 24 is generally required. In the case of Fabry-Perots of the type having mirrors comprising metal or metal compounds, increased reflectance usually is attended with increased absorbance. Consequently, in Fabry-Perots of the present type the demand of high finesse competes with that of high peak transmittance~ It is therefore desired to improve Fabry-Perots with respect to peak transmittance, without the finesse being adversely affectea.
It is an object of the present invention to provide a Fabry-Perot of the aforementioned type containing mirrors of material that is in itself reflecting, such as metal or metal 2 3 ~
compounds, which exhibits improved transmittance while retaining a high finesse. It is a further object of the invention to provide a Fabry-Perot of the type in which the mirrors are of a material that in itself is reflecting, such as ~etal, which allows improved finesse while retaining good 6 transmittance. Still another object of the invention is to provide a metal mirrors-containing Fabry-Perot that simultaneously displays improved transmittance and a higher finesse.
The invention consists in that in a Fabry-Perot of the type described above the mirrors are each provided with a 12 dielectric coating on the side facing away from the gap.
The dielectric coating may be seen as an analogue of an anti-reflection coating such as is commonly applied to the elements of optical instruments, but has a quite different function. In this respect, it should be clearly recognized that the use of such an anti-reflection coating on the outer 18 surface of the mirrors leads to the desired advantages, whilst the working area of the Fabry-Perot (to which the advantages apply) is within the gap, namely, on the inside of the mirrors.
The dielectric coating should be substantially transparent for the wavelength used. The Fabry-Perots 24 according to the invention hereinafter described are suitable for use with light of any wavelength, A. In practice, this light may indeed be of a single wave-length but may also be polychxomatic. In the latter case, ~ indicates the average wavelength.
The dielectric coating will generally function well if it has a thickness of from about 0.1~/n to about 0.5~n, with n indicating the index of refraction of the dielectric material. Preferably, the dielectric coating has a thickness of about 0.25~/n. These thicknesses are to be understood as 2 ~ 9 ~ ~ 3j - 5 - ~EM ~310 comprising said range ~ one or more half wavelengths, as the effect attained is periodical, the period being 0.5~.
It should be noted that such Fabry-Perots according to the invention are clearly distinguished from Fabry-Perots having quarter-wave stacks as mirrors. As indicated above, 6 the present invention pertains to Fabry-Perots having mirrors comprising a reflecting material, namely, a material that is in itself reflecting, such as a metal or a metal compound.
The aforementioned problem that high peak-transmittance and high finesse are competing demands is due to the absorbance observed with mirrors comprising such a reflecting material, 12 and at any rate plays a less significant role in Fabry-Perots having quarter-wave stacks as mirrors. Such Fabry-Perots are outside the scope of the present invention and, besides, are more difficult to produce, as the manufacture process involves the deposition of a number of quarter-wave layers of two different refractive indices.
18 In the embodiment in which a Fabry-Perot according to the original construction of C. Fabry and A. Perot is used, namely, one having mirrors comprising a transparent substrate plate coated on the inside, namely, the side facing the gap, with reflecting material, the dielectric coating of the invention is applied between the reflecting material and the 2~ su~strate.
Suitable dielectric coatings include any inorganic, organic or polymeric materials which satisfy the main reguirement of being, for the wavelength used, a non-absorbing iayer with an index of refraction higher than the gap medium (air or glass, usually). Examples of inorganic materials are the well-known materials co~monly employed in anti-r!eflection coatings, such as cryolite ~a sodium aluminum fluoride compound), magnesium fluoride, cerium fluoride, or a mixture thereof. Examples of polymeric materials are, e.g., 2~9~
those used for optical lenses, such as diethylene glycol bis(allyl carbonate).
It has been found that the higher the refractive index of t]he dielectric coating, the better the Fabry-Perot according to the instant invention functions. Hence, 6 preferred dielectric coatings are those having a refractive index higher than 2Ø These materials are in fact known from the field of Fabry-Perots. They commonly constitute the high refractive index layers in the aforementioned quarter wave stacks. Preferred dielectric coatings, in this respect, comprise zirconium dioxide, titanium dioxide, zinc sulfide, 12 zinc selenide, or a mixture thereof.
It should be noted that, generally, it will be convenient to apply the same dielectric coating to the surfaces of both mirrors. However, each mirror may also be coated with a different dielectric coating.
The mere coating of the mirrors with dielectric layers, 18 under the conditions set forth above, suffices to enhance the peak-transmittance. For various applications a further enhancement is not necessary, or sometimes even undesirable.
~owever, if an optimum enhancement in peak-transmittance with retained finesse is desired, it is required that the thicXness of the mirrors be adapted to the presence of the ~4 dielectric coating in such manner that the reflectance inside the gap remains unchanged. It cannot be predicted in general terms whether, in a specific case, the desired adaption can be achieved by increasing or by decreasing the thickness.
However, the person of ordinary skill in the art may calculate this, using the theory of Abeles described in M.
Born and E. Wolf, "Principles of optics", Pergamon Press, Oxford, 4th edition, 1970, pages 51 and following and 611 and followi~g.
The further constituents of the Fabry-Perots according to the instant invention are customary. The gap may enclose 2a36~5 air, glass, quartz, or any other suitable material, such as a transparent organic polymer. If the Fabry-Perot is to be used as a transmission modulator for optical interconnects, the gap may comprise a non-linear optical (NLO) material, preferably an NLO polymer. NL0 materials are well-known in 6 the art and need no further elucidation here. Examples of suitable NL0 polymers are those described in European Patent Publication Nos. 350,112, 350,113! 358,476, 445,864, 378,185, and 359,648.
The mirrors may be of any suitable reflecting material, and are in themselves well-known. Common examples of such 12 materials include metals, more particularly gold, silver, or aluminum.
The invention will be further described hereinafter with reference to the following Examples which should be construed to be explanatory rather than limitative.
2 ~ CJ
COMPARATIVE EX~MPLE 1 The Fabry-Perot for comparison purposes was an etalon for use with a wavelength of about 514.5 nm comprising two plane parallel mirrors of silver enclosing a 1 mm gap which mirrors comprised glass having a refractive index of 1.55.
6 The thickness of the mirrors was 50 nm. No dielectric coating was present.
For a wavelength near 514.5 nm the Fabry-Perot etalon displayed a peak transmittance of 3.7% at a finesse of 20.
The exemplified Fabry-Perot was an etalon as described 12 in Comparative Example 1, above, with the mirrors being coated on the outer surfaces (namely, the surfaces pointing away from the gap) with a dielectric coating of zinc sulfide.
The thickness of the dielectric coating was 55.9 nm, its refractive index was 2.3, namely, the Fabry Perot etalon, in accordance with the invention, comprised a dielectric coating 18 of 0.25~/n.
For a wavelength near 514.5 nm the Fabry-Perot etalon displayed a peak transmittance of 9.7%, at a finesse of 21.
The Fabry-Perot exemplified here is an etalon as in Example 2, with the thickness of the mirrors being adjusted 24 to 47.8 nm, in order to have the same internal reflectance as the uncoated Fabry-Perot etalon of comparison.
For a wavelength near 514.5 nm the Fabry-Perot etalon displayed a peak transmittance of 12.5% at a finesse of 20.
Claims (13)
PROPERTY OR PRIVILEGE IS CLAIMED ARE DEFINED AS FOLLOWS:
1. A Fabry-Perot comprising two mirrors of a reflecting material with the mirrors being separated from each other by a gap wherein the mirrors are each provided with a dielectric coating on the side facing away from the gap.
2. A Fabry-Perot according to Claim 1, suitable for use with light of average wavelength .lambda., wherein the dielectric coating has a refractive index n, and a thickness of from about 0.1.lambda./n to about 0.5.lambda./n.
3. A Fabry-Perot according to Claim 2 wherein the dielectric coating has a thickness of about 0.25.lambda./n.
4. A Fabry-Perot according to Claim 1 wherein the thickness of the mirrors is adjusted so as to retain the same level of internal reflectance as an uncoated Fabry-Perot.
5. A Fabry-Perot according to Claim 1 wherein the dielectric coating comprises an organic polymer.
6. A Fabry-Perot according to Claim 1 wherein the dielectric coating comprises cryolite, magnesium fluoride, cerium fluoride, or a mixture thereof.
7. A Fabry-Perot according to Claim 1 wherein the dielectric coating has a refractive index higher than 2Ø
8. A Fabry-Perot according to Claim 7, wherein the dielectric coating comprises zirconium dioxide, titanium dioxide, zinc sulfide, zinc selenide, or a mixture thereof.
9. A Fabry-Perot according to Claim 1 wherein the gap comprises a non-linear optical polymer.
10. A Fabry-Perot according to Claim 2 wherein the dielectric coating comprises an organic polymer.
11. A Fabry-Perot according to Claim 2 wherein the dielectric coating comprises cryolite, magnesium fluoride, cerium fluoride, or a mixture thereof.
12. A Fabry-Perot according to Claim 2 wherein the dielectric coating has a refractive index higher than 2Ø
13. A Fabry-Perot according to Claim 13 wherein the dielectric coating comprises zirconium dioxide, titanium dioxide, zinc sulfide, zinc selenide, or a mixture thereof.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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EP92201408.9 | 1992-05-19 | ||
EP92201408 | 1992-05-19 |
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CA2096455A1 true CA2096455A1 (en) | 1993-11-20 |
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Application Number | Title | Priority Date | Filing Date |
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CA002096455A Abandoned CA2096455A1 (en) | 1992-05-19 | 1993-05-18 | Fabry-perot with coated mirrors |
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US (1) | US5381232A (en) |
JP (1) | JPH0690045A (en) |
KR (1) | KR930023745A (en) |
CN (1) | CN1079820A (en) |
CA (1) | CA2096455A1 (en) |
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Families Citing this family (176)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6674562B1 (en) | 1994-05-05 | 2004-01-06 | Iridigm Display Corporation | Interferometric modulation of radiation |
US7830587B2 (en) * | 1993-03-17 | 2010-11-09 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light with semiconductor substrate |
US7123216B1 (en) * | 1994-05-05 | 2006-10-17 | Idc, Llc | Photonic MEMS and structures |
US7550794B2 (en) * | 2002-09-20 | 2009-06-23 | Idc, Llc | Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer |
US7826120B2 (en) * | 1994-05-05 | 2010-11-02 | Qualcomm Mems Technologies, Inc. | Method and device for multi-color interferometric modulation |
US7808694B2 (en) | 1994-05-05 | 2010-10-05 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
US20010003487A1 (en) * | 1996-11-05 | 2001-06-14 | Mark W. Miles | Visible spectrum modulator arrays |
US7738157B2 (en) | 1994-05-05 | 2010-06-15 | Qualcomm Mems Technologies, Inc. | System and method for a MEMS device |
US8081369B2 (en) * | 1994-05-05 | 2011-12-20 | Qualcomm Mems Technologies, Inc. | System and method for a MEMS device |
US7619810B2 (en) * | 1994-05-05 | 2009-11-17 | Idc, Llc | Systems and methods of testing micro-electromechanical devices |
US7460291B2 (en) * | 1994-05-05 | 2008-12-02 | Idc, Llc | Separable modulator |
US7776631B2 (en) | 1994-05-05 | 2010-08-17 | Qualcomm Mems Technologies, Inc. | MEMS device and method of forming a MEMS device |
US7852545B2 (en) * | 1994-05-05 | 2010-12-14 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
JP3047311B2 (en) * | 1994-12-08 | 2000-05-29 | キヤノン株式会社 | Liquid crystal display |
US7898722B2 (en) * | 1995-05-01 | 2011-03-01 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device with restoring electrode |
US7830588B2 (en) | 1996-12-19 | 2010-11-09 | Qualcomm Mems Technologies, Inc. | Method of making a light modulating display device and associated transistor circuitry and structures thereof |
KR100703140B1 (en) * | 1998-04-08 | 2007-04-05 | 이리다임 디스플레이 코포레이션 | Interferometric modulation and its manufacturing method |
US8928967B2 (en) | 1998-04-08 | 2015-01-06 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
US6215926B1 (en) * | 1999-02-10 | 2001-04-10 | Avanex Corporation | Fiber optic dense wavelength division multiplexer with a phase differential method of wavelengths separation utilizing glass blocks and a nonlinear interferometer |
US6169604B1 (en) * | 1999-02-10 | 2001-01-02 | Avanex Corporation | Nonlinear interferometer for fiber optic dense wavelength division multiplexer utilizing a phase bias element to separate wavelengths in an optical signal |
WO2003007049A1 (en) * | 1999-10-05 | 2003-01-23 | Iridigm Display Corporation | Photonic mems and structures |
FR2805052A1 (en) * | 2000-02-14 | 2001-08-17 | Schlumberger Ind Sa | FABRY-PEROT FILTER WITH METALLIC LAYERS |
US6747775B2 (en) * | 2000-03-20 | 2004-06-08 | Np Photonics, Inc. | Detunable Fabry-Perot interferometer and an add/drop multiplexer using the same |
WO2001071277A1 (en) * | 2000-03-20 | 2001-09-27 | Solus Micro Technologies, Inc. | Electrostatically-actuated tunable optical components using entropic materials |
US6678084B2 (en) | 2000-03-20 | 2004-01-13 | Np Photonics, Inc. | Methods of making mechanisms in which relative locations of elements are maintained during manufacturing |
US6665109B2 (en) | 2000-03-20 | 2003-12-16 | Np Photonics, Inc. | Compliant mechanism and method of forming same |
US6597461B1 (en) | 2000-03-20 | 2003-07-22 | Parvenu, Inc. | Tunable fabry-perot interferometer using entropic materials |
US6747784B2 (en) | 2000-03-20 | 2004-06-08 | Np Photonics, Inc. | Compliant mechanism and method of forming same |
US6794119B2 (en) * | 2002-02-12 | 2004-09-21 | Iridigm Display Corporation | Method for fabricating a structure for a microelectromechanical systems (MEMS) device |
US6574033B1 (en) | 2002-02-27 | 2003-06-03 | Iridigm Display Corporation | Microelectromechanical systems device and method for fabricating same |
US7781850B2 (en) * | 2002-09-20 | 2010-08-24 | Qualcomm Mems Technologies, Inc. | Controlling electromechanical behavior of structures within a microelectromechanical systems device |
DE10251889A1 (en) * | 2002-11-07 | 2004-05-27 | Siemens Ag | Receiver for angle modulated optical signals has optical resonator to which optical signal is fed and in front of which optical output coupling device for light reflected from resonator is arranged |
TW594360B (en) * | 2003-04-21 | 2004-06-21 | Prime View Int Corp Ltd | A method for fabricating an interference display cell |
TW570896B (en) | 2003-05-26 | 2004-01-11 | Prime View Int Co Ltd | A method for fabricating an interference display cell |
US7221495B2 (en) * | 2003-06-24 | 2007-05-22 | Idc Llc | Thin film precursor stack for MEMS manufacturing |
TW200506479A (en) * | 2003-08-15 | 2005-02-16 | Prime View Int Co Ltd | Color changeable pixel for an interference display |
TWI231865B (en) * | 2003-08-26 | 2005-05-01 | Prime View Int Co Ltd | An interference display cell and fabrication method thereof |
TWI232333B (en) * | 2003-09-03 | 2005-05-11 | Prime View Int Co Ltd | Display unit using interferometric modulation and manufacturing method thereof |
KR100532303B1 (en) * | 2003-11-15 | 2005-11-29 | 삼성전자주식회사 | Multi channel optical light source and multi channel optical module using the same |
US7532194B2 (en) * | 2004-02-03 | 2009-05-12 | Idc, Llc | Driver voltage adjuster |
US7706050B2 (en) * | 2004-03-05 | 2010-04-27 | Qualcomm Mems Technologies, Inc. | Integrated modulator illumination |
US7720148B2 (en) * | 2004-03-26 | 2010-05-18 | The Hong Kong University Of Science And Technology | Efficient multi-frame motion estimation for video compression |
US7476327B2 (en) * | 2004-05-04 | 2009-01-13 | Idc, Llc | Method of manufacture for microelectromechanical devices |
CN1323286C (en) * | 2004-06-03 | 2007-06-27 | 中山大学 | Fabry-perot cavity structure for optical fibre sensing |
US7256922B2 (en) * | 2004-07-02 | 2007-08-14 | Idc, Llc | Interferometric modulators with thin film transistors |
TWI233916B (en) * | 2004-07-09 | 2005-06-11 | Prime View Int Co Ltd | A structure of a micro electro mechanical system |
KR101255691B1 (en) * | 2004-07-29 | 2013-04-17 | 퀄컴 엠이엠에스 테크놀로지스, 인크. | System and method for micro-electromechanical operating of an interferometric modulator |
US7554714B2 (en) * | 2004-09-27 | 2009-06-30 | Idc, Llc | Device and method for manipulation of thermal response in a modulator |
US7684104B2 (en) * | 2004-09-27 | 2010-03-23 | Idc, Llc | MEMS using filler material and method |
US7289259B2 (en) * | 2004-09-27 | 2007-10-30 | Idc, Llc | Conductive bus structure for interferometric modulator array |
US7564612B2 (en) * | 2004-09-27 | 2009-07-21 | Idc, Llc | Photonic MEMS and structures |
US7719500B2 (en) * | 2004-09-27 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | Reflective display pixels arranged in non-rectangular arrays |
US7630119B2 (en) * | 2004-09-27 | 2009-12-08 | Qualcomm Mems Technologies, Inc. | Apparatus and method for reducing slippage between structures in an interferometric modulator |
US7327510B2 (en) * | 2004-09-27 | 2008-02-05 | Idc, Llc | Process for modifying offset voltage characteristics of an interferometric modulator |
US7612932B2 (en) * | 2004-09-27 | 2009-11-03 | Idc, Llc | Microelectromechanical device with optical function separated from mechanical and electrical function |
US7355780B2 (en) * | 2004-09-27 | 2008-04-08 | Idc, Llc | System and method of illuminating interferometric modulators using backlighting |
US7936497B2 (en) * | 2004-09-27 | 2011-05-03 | Qualcomm Mems Technologies, Inc. | MEMS device having deformable membrane characterized by mechanical persistence |
US7321456B2 (en) | 2004-09-27 | 2008-01-22 | Idc, Llc | Method and device for corner interferometric modulation |
US7492502B2 (en) * | 2004-09-27 | 2009-02-17 | Idc, Llc | Method of fabricating a free-standing microstructure |
US7893919B2 (en) * | 2004-09-27 | 2011-02-22 | Qualcomm Mems Technologies, Inc. | Display region architectures |
US7420725B2 (en) | 2004-09-27 | 2008-09-02 | Idc, Llc | Device having a conductive light absorbing mask and method for fabricating same |
US7405861B2 (en) * | 2004-09-27 | 2008-07-29 | Idc, Llc | Method and device for protecting interferometric modulators from electrostatic discharge |
US7417783B2 (en) * | 2004-09-27 | 2008-08-26 | Idc, Llc | Mirror and mirror layer for optical modulator and method |
US7304784B2 (en) * | 2004-09-27 | 2007-12-04 | Idc, Llc | Reflective display device having viewable display on both sides |
US7372613B2 (en) | 2004-09-27 | 2008-05-13 | Idc, Llc | Method and device for multistate interferometric light modulation |
US20060065622A1 (en) * | 2004-09-27 | 2006-03-30 | Floyd Philip D | Method and system for xenon fluoride etching with enhanced efficiency |
US7161730B2 (en) | 2004-09-27 | 2007-01-09 | Idc, Llc | System and method for providing thermal compensation for an interferometric modulator display |
US7553684B2 (en) * | 2004-09-27 | 2009-06-30 | Idc, Llc | Method of fabricating interferometric devices using lift-off processing techniques |
US7369296B2 (en) * | 2004-09-27 | 2008-05-06 | Idc, Llc | Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator |
US8008736B2 (en) * | 2004-09-27 | 2011-08-30 | Qualcomm Mems Technologies, Inc. | Analog interferometric modulator device |
US20060067650A1 (en) * | 2004-09-27 | 2006-03-30 | Clarence Chui | Method of making a reflective display device using thin film transistor production techniques |
US7373026B2 (en) * | 2004-09-27 | 2008-05-13 | Idc, Llc | MEMS device fabricated on a pre-patterned substrate |
US7813026B2 (en) * | 2004-09-27 | 2010-10-12 | Qualcomm Mems Technologies, Inc. | System and method of reducing color shift in a display |
US7349136B2 (en) * | 2004-09-27 | 2008-03-25 | Idc, Llc | Method and device for a display having transparent components integrated therein |
US20060065366A1 (en) * | 2004-09-27 | 2006-03-30 | Cummings William J | Portable etch chamber |
US7130104B2 (en) * | 2004-09-27 | 2006-10-31 | Idc, Llc | Methods and devices for inhibiting tilting of a mirror in an interferometric modulator |
US7302157B2 (en) * | 2004-09-27 | 2007-11-27 | Idc, Llc | System and method for multi-level brightness in interferometric modulation |
US7944599B2 (en) | 2004-09-27 | 2011-05-17 | Qualcomm Mems Technologies, Inc. | Electromechanical device with optical function separated from mechanical and electrical function |
US7583429B2 (en) | 2004-09-27 | 2009-09-01 | Idc, Llc | Ornamental display device |
US7429334B2 (en) * | 2004-09-27 | 2008-09-30 | Idc, Llc | Methods of fabricating interferometric modulators by selectively removing a material |
US7527995B2 (en) | 2004-09-27 | 2009-05-05 | Qualcomm Mems Technologies, Inc. | Method of making prestructure for MEMS systems |
TW200628877A (en) * | 2005-02-04 | 2006-08-16 | Prime View Int Co Ltd | Method of manufacturing optical interference type color display |
US7884989B2 (en) * | 2005-05-27 | 2011-02-08 | Qualcomm Mems Technologies, Inc. | White interferometric modulators and methods for forming the same |
US7460292B2 (en) * | 2005-06-03 | 2008-12-02 | Qualcomm Mems Technologies, Inc. | Interferometric modulator with internal polarization and drive method |
EP1910216A1 (en) * | 2005-07-22 | 2008-04-16 | QUALCOMM Incorporated | Support structure for mems device and methods therefor |
KR101423321B1 (en) | 2005-07-22 | 2014-07-30 | 퀄컴 엠이엠에스 테크놀로지스, 인크. | Electomechanical devices having support structures and methods of fabricating the same |
EP2495212A3 (en) | 2005-07-22 | 2012-10-31 | QUALCOMM MEMS Technologies, Inc. | Mems devices having support structures and methods of fabricating the same |
EP1928780A2 (en) | 2005-09-30 | 2008-06-11 | Qualcomm Mems Technologies, Inc. | Mems device and interconnects for same |
US7630114B2 (en) * | 2005-10-28 | 2009-12-08 | Idc, Llc | Diffusion barrier layer for MEMS devices |
DE102005052758A1 (en) * | 2005-11-04 | 2007-05-16 | Leica Microsystems | Substrate holding device for use in a position measuring device |
US7795061B2 (en) * | 2005-12-29 | 2010-09-14 | Qualcomm Mems Technologies, Inc. | Method of creating MEMS device cavities by a non-etching process |
US7916980B2 (en) | 2006-01-13 | 2011-03-29 | Qualcomm Mems Technologies, Inc. | Interconnect structure for MEMS device |
US7382515B2 (en) * | 2006-01-18 | 2008-06-03 | Qualcomm Mems Technologies, Inc. | Silicon-rich silicon nitrides as etch stops in MEMS manufacture |
US7652814B2 (en) | 2006-01-27 | 2010-01-26 | Qualcomm Mems Technologies, Inc. | MEMS device with integrated optical element |
US7547568B2 (en) * | 2006-02-22 | 2009-06-16 | Qualcomm Mems Technologies, Inc. | Electrical conditioning of MEMS device and insulating layer thereof |
US7550810B2 (en) * | 2006-02-23 | 2009-06-23 | Qualcomm Mems Technologies, Inc. | MEMS device having a layer movable at asymmetric rates |
US7450295B2 (en) * | 2006-03-02 | 2008-11-11 | Qualcomm Mems Technologies, Inc. | Methods for producing MEMS with protective coatings using multi-component sacrificial layers |
US7643203B2 (en) * | 2006-04-10 | 2010-01-05 | Qualcomm Mems Technologies, Inc. | Interferometric optical display system with broadband characteristics |
US7623287B2 (en) * | 2006-04-19 | 2009-11-24 | Qualcomm Mems Technologies, Inc. | Non-planar surface structures and process for microelectromechanical systems |
US7417784B2 (en) * | 2006-04-19 | 2008-08-26 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing a porous surface |
US7527996B2 (en) * | 2006-04-19 | 2009-05-05 | Qualcomm Mems Technologies, Inc. | Non-planar surface structures and process for microelectromechanical systems |
US20070249078A1 (en) * | 2006-04-19 | 2007-10-25 | Ming-Hau Tung | Non-planar surface structures and process for microelectromechanical systems |
US7711239B2 (en) | 2006-04-19 | 2010-05-04 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing nanoparticles |
US7369292B2 (en) * | 2006-05-03 | 2008-05-06 | Qualcomm Mems Technologies, Inc. | Electrode and interconnect materials for MEMS devices |
US20070268201A1 (en) * | 2006-05-22 | 2007-11-22 | Sampsell Jeffrey B | Back-to-back displays |
US7405863B2 (en) * | 2006-06-01 | 2008-07-29 | Qualcomm Mems Technologies, Inc. | Patterning of mechanical layer in MEMS to reduce stresses at supports |
US7649671B2 (en) * | 2006-06-01 | 2010-01-19 | Qualcomm Mems Technologies, Inc. | Analog interferometric modulator device with electrostatic actuation and release |
US7835061B2 (en) * | 2006-06-28 | 2010-11-16 | Qualcomm Mems Technologies, Inc. | Support structures for free-standing electromechanical devices |
US7385744B2 (en) * | 2006-06-28 | 2008-06-10 | Qualcomm Mems Technologies, Inc. | Support structure for free-standing MEMS device and methods for forming the same |
US7527998B2 (en) | 2006-06-30 | 2009-05-05 | Qualcomm Mems Technologies, Inc. | Method of manufacturing MEMS devices providing air gap control |
US7566664B2 (en) * | 2006-08-02 | 2009-07-28 | Qualcomm Mems Technologies, Inc. | Selective etching of MEMS using gaseous halides and reactive co-etchants |
US7763546B2 (en) | 2006-08-02 | 2010-07-27 | Qualcomm Mems Technologies, Inc. | Methods for reducing surface charges during the manufacture of microelectromechanical systems devices |
US20080043315A1 (en) * | 2006-08-15 | 2008-02-21 | Cummings William J | High profile contacts for microelectromechanical systems |
US7629197B2 (en) * | 2006-10-18 | 2009-12-08 | Qualcomm Mems Technologies, Inc. | Spatial light modulator |
US7545552B2 (en) * | 2006-10-19 | 2009-06-09 | Qualcomm Mems Technologies, Inc. | Sacrificial spacer process and resultant structure for MEMS support structure |
US7706042B2 (en) | 2006-12-20 | 2010-04-27 | Qualcomm Mems Technologies, Inc. | MEMS device and interconnects for same |
US7535621B2 (en) | 2006-12-27 | 2009-05-19 | Qualcomm Mems Technologies, Inc. | Aluminum fluoride films for microelectromechanical system applications |
US8115987B2 (en) * | 2007-02-01 | 2012-02-14 | Qualcomm Mems Technologies, Inc. | Modulating the intensity of light from an interferometric reflector |
US7733552B2 (en) * | 2007-03-21 | 2010-06-08 | Qualcomm Mems Technologies, Inc | MEMS cavity-coating layers and methods |
US7742220B2 (en) * | 2007-03-28 | 2010-06-22 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing conducting layers separated by stops |
US7715085B2 (en) * | 2007-05-09 | 2010-05-11 | Qualcomm Mems Technologies, Inc. | Electromechanical system having a dielectric movable membrane and a mirror |
US7643202B2 (en) * | 2007-05-09 | 2010-01-05 | Qualcomm Mems Technologies, Inc. | Microelectromechanical system having a dielectric movable membrane and a mirror |
US7719752B2 (en) | 2007-05-11 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same |
US7625825B2 (en) * | 2007-06-14 | 2009-12-01 | Qualcomm Mems Technologies, Inc. | Method of patterning mechanical layer for MEMS structures |
US7643199B2 (en) * | 2007-06-19 | 2010-01-05 | Qualcomm Mems Technologies, Inc. | High aperture-ratio top-reflective AM-iMod displays |
US7782517B2 (en) * | 2007-06-21 | 2010-08-24 | Qualcomm Mems Technologies, Inc. | Infrared and dual mode displays |
US7630121B2 (en) * | 2007-07-02 | 2009-12-08 | Qualcomm Mems Technologies, Inc. | Electromechanical device with optical function separated from mechanical and electrical function |
US8068268B2 (en) * | 2007-07-03 | 2011-11-29 | Qualcomm Mems Technologies, Inc. | MEMS devices having improved uniformity and methods for making them |
EP2183623A1 (en) * | 2007-07-31 | 2010-05-12 | Qualcomm Mems Technologies, Inc. | Devices for enhancing colour shift of interferometric modulators |
US7570415B2 (en) * | 2007-08-07 | 2009-08-04 | Qualcomm Mems Technologies, Inc. | MEMS device and interconnects for same |
US8072402B2 (en) * | 2007-08-29 | 2011-12-06 | Qualcomm Mems Technologies, Inc. | Interferometric optical modulator with broadband reflection characteristics |
US7847999B2 (en) * | 2007-09-14 | 2010-12-07 | Qualcomm Mems Technologies, Inc. | Interferometric modulator display devices |
US7773286B2 (en) * | 2007-09-14 | 2010-08-10 | Qualcomm Mems Technologies, Inc. | Periodic dimple array |
US20090078316A1 (en) * | 2007-09-24 | 2009-03-26 | Qualcomm Incorporated | Interferometric photovoltaic cell |
JP5209727B2 (en) * | 2007-10-19 | 2013-06-12 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | Display with integrated photovoltaic device |
US8058549B2 (en) * | 2007-10-19 | 2011-11-15 | Qualcomm Mems Technologies, Inc. | Photovoltaic devices with integrated color interferometric film stacks |
JP2011504243A (en) * | 2007-10-23 | 2011-02-03 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | Adjustable transmissive MEMS-based device |
US20090293955A1 (en) * | 2007-11-07 | 2009-12-03 | Qualcomm Incorporated | Photovoltaics with interferometric masks |
US8941631B2 (en) * | 2007-11-16 | 2015-01-27 | Qualcomm Mems Technologies, Inc. | Simultaneous light collection and illumination on an active display |
US7715079B2 (en) * | 2007-12-07 | 2010-05-11 | Qualcomm Mems Technologies, Inc. | MEMS devices requiring no mechanical support |
CA2710198A1 (en) * | 2007-12-21 | 2009-07-09 | Qualcomm Mems Technologies, Inc. | Multijunction photovoltaic cells |
US7863079B2 (en) | 2008-02-05 | 2011-01-04 | Qualcomm Mems Technologies, Inc. | Methods of reducing CD loss in a microelectromechanical device |
US8164821B2 (en) | 2008-02-22 | 2012-04-24 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device with thermal expansion balancing layer or stiffening layer |
US7944604B2 (en) * | 2008-03-07 | 2011-05-17 | Qualcomm Mems Technologies, Inc. | Interferometric modulator in transmission mode |
US7612933B2 (en) * | 2008-03-27 | 2009-11-03 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device with spacing layer |
US7898723B2 (en) * | 2008-04-02 | 2011-03-01 | Qualcomm Mems Technologies, Inc. | Microelectromechanical systems display element with photovoltaic structure |
US7969638B2 (en) * | 2008-04-10 | 2011-06-28 | Qualcomm Mems Technologies, Inc. | Device having thin black mask and method of fabricating the same |
US7746539B2 (en) * | 2008-06-25 | 2010-06-29 | Qualcomm Mems Technologies, Inc. | Method for packing a display device and the device obtained thereof |
US8023167B2 (en) * | 2008-06-25 | 2011-09-20 | Qualcomm Mems Technologies, Inc. | Backlight displays |
US7768690B2 (en) | 2008-06-25 | 2010-08-03 | Qualcomm Mems Technologies, Inc. | Backlight displays |
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US7855826B2 (en) | 2008-08-12 | 2010-12-21 | Qualcomm Mems Technologies, Inc. | Method and apparatus to reduce or eliminate stiction and image retention in interferometric modulator devices |
US8358266B2 (en) * | 2008-09-02 | 2013-01-22 | Qualcomm Mems Technologies, Inc. | Light turning device with prismatic light turning features |
WO2010044901A1 (en) * | 2008-10-16 | 2010-04-22 | Qualcomm Mems Technologies, Inc. | Monolithic imod color enhanced photovoltaic cell |
US20100096011A1 (en) * | 2008-10-16 | 2010-04-22 | Qualcomm Mems Technologies, Inc. | High efficiency interferometric color filters for photovoltaic modules |
US8270056B2 (en) * | 2009-03-23 | 2012-09-18 | Qualcomm Mems Technologies, Inc. | Display device with openings between sub-pixels and method of making same |
WO2010138763A1 (en) * | 2009-05-29 | 2010-12-02 | Qualcomm Mems Technologies, Inc. | Illumination devices and methods of fabrication thereof |
CN102804005B (en) * | 2009-06-17 | 2016-07-06 | 皇家飞利浦电子股份有限公司 | The interference filter with highly transmissive and big suppression scope for micro spectrometer |
US8270062B2 (en) * | 2009-09-17 | 2012-09-18 | Qualcomm Mems Technologies, Inc. | Display device with at least one movable stop element |
US8488228B2 (en) * | 2009-09-28 | 2013-07-16 | Qualcomm Mems Technologies, Inc. | Interferometric display with interferometric reflector |
WO2011126953A1 (en) | 2010-04-09 | 2011-10-13 | Qualcomm Mems Technologies, Inc. | Mechanical layer of an electromechanical device and methods of forming the same |
JP5531832B2 (en) * | 2010-07-06 | 2014-06-25 | セイコーエプソン株式会社 | Optical filter, optical filter module, spectrophotometer and optical instrument |
WO2012024238A1 (en) | 2010-08-17 | 2012-02-23 | Qualcomm Mems Technologies, Inc. | Actuation and calibration of a charge neutral electrode in an interferometric display device |
US9057872B2 (en) | 2010-08-31 | 2015-06-16 | Qualcomm Mems Technologies, Inc. | Dielectric enhanced mirror for IMOD display |
US8963159B2 (en) | 2011-04-04 | 2015-02-24 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
US9134527B2 (en) | 2011-04-04 | 2015-09-15 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
EP2699952A4 (en) * | 2011-04-20 | 2015-06-24 | Univ Michigan | Spectrum filtering for visual displays and imaging having minimal angle dependence |
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US8736939B2 (en) | 2011-11-04 | 2014-05-27 | Qualcomm Mems Technologies, Inc. | Matching layer thin-films for an electromechanical systems reflective display device |
US9547107B2 (en) | 2013-03-15 | 2017-01-17 | The Regents Of The University Of Michigan | Dye and pigment-free structural colors and angle-insensitive spectrum filters |
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MX2019002665A (en) * | 2018-03-14 | 2019-09-16 | Viavi Solutions Inc | Solvent-less method to manufacture thin film devices. |
CN108919405A (en) * | 2018-07-03 | 2018-11-30 | 深圳市融光纳米科技有限公司 | The insensitive reflection filter of angle |
CN109238437A (en) * | 2018-08-28 | 2019-01-18 | 电子科技大学 | A kind of Fabry-perot optical fiber sonic probe based on silicon nitride MEMS film |
EP3650833A1 (en) | 2018-11-09 | 2020-05-13 | Technische Universität München | Multicolor optical resonator for imaging methods |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4400058A (en) * | 1980-06-16 | 1983-08-23 | Honeywell Inc. | Tunable Fabry-Perot filter |
GB2082380A (en) * | 1980-08-18 | 1982-03-03 | Standard Telephones Cables Ltd | Injection laser |
GB8621439D0 (en) * | 1986-09-05 | 1986-10-15 | Secr Defence | Electro-optic device |
US4959448A (en) * | 1988-07-04 | 1990-09-25 | Akzo N.V. | Liquid crystalline side-chain polyesters prepared by polycondensation reactions |
ATE168790T1 (en) * | 1988-09-08 | 1998-08-15 | Akzo Nobel Nv | INTEGRATED OPTICAL COMPONENTS |
FR2636634B1 (en) * | 1988-09-16 | 1992-11-27 | Rhone Poulenc Chimie | POLYURETHANES, NON-LINEAR OPTICAL ACTIVE INGREDIENTS AND MATERIALS CONTAINING THE SAME, OPTICAL DEVICE CONTAINING THE SAME, AND METHODS OF MAKING SUCH COMPOUNDS AND MATERIALS |
JPH02146526A (en) * | 1988-11-29 | 1990-06-05 | Seiko Instr Inc | Liquid crystal element |
US4957655A (en) * | 1989-01-12 | 1990-09-18 | Hoechst Celanese Corp. | Copolymeric nonlinear optical media |
DE69103555T2 (en) * | 1990-03-06 | 1995-03-02 | Akzo Nobel Nv | Thermosetting NLO system and integral optical components based on it. |
-
1993
- 1993-05-13 TW TW082103748A patent/TW245772B/zh active
- 1993-05-18 CA CA002096455A patent/CA2096455A1/en not_active Abandoned
- 1993-05-18 US US08/063,591 patent/US5381232A/en not_active Expired - Fee Related
- 1993-05-19 KR KR1019930008763A patent/KR930023745A/en not_active Application Discontinuation
- 1993-05-19 CN CN93106209A patent/CN1079820A/en active Pending
- 1993-05-19 JP JP5139173A patent/JPH0690045A/en active Pending
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US5381232A (en) | 1995-01-10 |
CN1079820A (en) | 1993-12-22 |
JPH0690045A (en) | 1994-03-29 |
TW245772B (en) | 1995-04-21 |
KR930023745A (en) | 1993-12-21 |
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