CA2097811A1 - Optical interference coating comprising interleaved thin-film stacks - Google Patents
Optical interference coating comprising interleaved thin-film stacksInfo
- Publication number
- CA2097811A1 CA2097811A1 CA002097811A CA2097811A CA2097811A1 CA 2097811 A1 CA2097811 A1 CA 2097811A1 CA 002097811 A CA002097811 A CA 002097811A CA 2097811 A CA2097811 A CA 2097811A CA 2097811 A1 CA2097811 A1 CA 2097811A1
- Authority
- CA
- Canada
- Prior art keywords
- stack
- stacks
- interleaved
- coating
- refraction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 19
- 239000011248 coating agent Substances 0.000 title claims abstract description 17
- 230000003287 optical effect Effects 0.000 title claims abstract description 11
- 239000010409 thin film Substances 0.000 title description 5
- 239000000463 material Substances 0.000 claims abstract description 31
- 230000005855 radiation Effects 0.000 claims abstract description 6
- 230000005540 biological transmission Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 description 12
- 238000002310 reflectometry Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/281—Interference filters designed for the infrared light
- G02B5/282—Interference filters designed for the infrared light reflecting for infrared and transparent for visible light, e.g. heat reflectors, laser protection
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Filters (AREA)
Abstract
The present invention describes an optical interference coating useful for transmitting visible radiation and reflecting infrared radiation. The coating is formed from a series of interleaved stacks. The interleaved stacks require only two materials, one having a low index of refraction (L) and the second having a high index of refraction (H). The interleaved stack is made from a first stack of the form (L/a bH L/a) and a second stack of the form (H/a bL H/a). The interleaved stack includes one or more of the combined first stack and second stack in the form [(L/a bH L/a) (H/a bL H/a)]. A stack of the form (L/a bH L/a) is placed on one side of the interleaved stacks to achieve symmetry. The complete visible transmitting and infrared reflecting coating is made from two interleaved stacks centered at different wavelength and a third quaterwave stack of the form (L/2 H L/2) centered at a third wavelength. Each interleaved stack and quarterwave stack includes one or more layers.
Description
W093/09~9 2 ~ 9 7 8 11 PCT'I)S92/09050 '' ~PTICAL INTERFERENCE COATING COMPR~SING INTERLEAVED
~IN-FILM STACKS.
The present invention describes a novel procedure for g designing thin film filters using the technique of inter-leaving similar stacks. The resultant interleaved stacks can be used to make filters with extended ripple free passbands and reflectors with steep slopes.
This novel technique was developed becau~e of the 10 need to make IR reflective coatings with wide passbands in the visible portion of the spectrum. Two prior techniques for achieving this performance are the "2:1 stack" and stacks that re~uire three materials with different indices of refraction typically designated as H=>high, L=>low and M=>medium.
The 2:1 stacks are two materia~ stacks with layers alternating between the H (high) ar~i ~ (low) indices of refraction and having optical phase ~nicknesses such ,nat either the H or L material is twice the optical phase thickness of the other. The disadvantage of this stack is, the visible passband is set by this stack and is narrow compared to the three material stacks or the interleaving technique to be described.
The three material stacks have passbands that are wide and whose edges are not defined by one stack. The passband is typically described by two stacks centered at somewhat different wavelengths. One stack is of the three material ty,pe and centered at the longer wavelength. The other stack is typically a standard quarter-wave stack (i.e. alternating H and L layers with quarter-wave optical phase thicknesses) and centered at the shorter wavelength.
The disadvantage of these stacks is, three materials with the appropriate indices of refraction must be used or one of the three indices must be synthesized from the other two.
' - - - . ::
: . . , . ~ : - . . .
The novel technique of interleaving similar thin-film stacks eliminates the need to utilize stacks comprising three materials. The interleaving technique also achieves bandwidths in the passband similar to the three material techni~ue.
The present invention describes an interference coating for reflecting infrared radiation and transmitting visible light. The coating is formed from one or more interleaved stacks and a third standard quarter wave stack. An interleaved stack is made from two similar stacks. The first stack is made of three layers of the form (L/a bH L/a). The second stack is made of three layers of the form (H/a bL H/a). The interleaved stack is a plurality of a combined first and second stack and is of the form [(L/a bH L/a) (H/a bL H/a)]. L and H refer to materials of low and high indices of refraction respec-tively a and b refer to the thickn~ess of each layer.
In the drawings:
FIGURE 1 shows reflectivity versus wavelength for a stack of the form [L/2 H L/2] ;
FIGURE 2 shows reflectivity versus wavelength for a stack of the form lH/2 L H/2~8;
FIGURE 3 shows reflectivity versus wavelength for an interleaved stack of the form (L/2 H L/2 H/2 L H/2)3 (L/2 H L/2) from 200 to lOO0 nm;
FIGURE 4 shows reflectivity versus wavelength for a interleaved stack of the form (L/2 H L/2 H/2 L H/2)3 30 (L/2 H L/2) from 600 to 3000 nm;
FIGURE 5 shows predicted reflectivity versus wave-length for an interleaved stack designed for a center wavelength of 425 nm;
FIGURE 6 shows actual transmission versus wavelength for the interleaved stack used in Fig. 5;
.. , ..~
~ ~ , . . .
W093/09~9 PCT/US92/O90S0 -- 2a~7sll -FIGURE 7 shows a comparison of the reflectance of an IR reflector designed around interleaved stacks of the present invention with an IR reflector designed around a 2:1 type stack;
FIGURE 8 shows a comparison of the reflectance of an IR reflector designed around interleaved stacks of the present invention with an IR reflector designed around a three material stack;
FIGURE 9 is a schematic cross sectional view, not to 10 scale, of an optical interference coating for reflecting infrared radiation in accordance with one embodiment of the invention;
FIGURE lO is a schematic cross sectional view, not to scale, of an optical interference coating for reflecting 15 infrared radiation in accordance with another embodiment of the invention. ~-For a better understanding of the present invention, together with other and further advantages thereof, reference is made to the following description and ap-pended claims in connection with the above-described drawing.
The novel technique of interleaving similar thin-film stacks begins with the work of LI Epstien and his descrip-tion of Herpin equivalent layers. A Herpin equivalent stack in its simplest form can be described with the notation (pqp). Where p and q are typically two materials of H-high and L-low indices of refraction. The arrange-ment of the H and L materials are such that the outerlayers, the layers designated by p, have the same index of refraction and the same optical and physical thicknesses.
This arrangement makes it simple to calculate what is known as the effective index and optical phase thickness at a particular wavelength. The interleaving technique .. ~ ' ' ~ .' ` ~ . . .
- . . .
W093/09449 2 0 9 7 ~ ~ ~ PCr/US92/09050~
. .,~. i.
use6 this information to predict the regions of high reflectivity and high transmission.
A standard thin film filter is typically made by depositing multiple Herpin equivalent stacks. The nota-S tion for this type of stack arrangement is (pqp)n. Wheren is the number of times the stack is repeated. Using this notation and calculating the effective indices and phase thicknesses it is found that whenever the effective index is much greater than or less than l.OO, if the incident medium is air, and the effective phase thickness of the basic period (pqp) is an odd multiple of a half- -wave, (i.e. (2j-1)~, j=1,2,3,...) there will be a region of high reflectance. Also, if two stacks are considered, one of the form (pqp) where p correspond to H (high index of refraction), and q corresponds to L (low index of refraction) (H/a1 ~1L H/a1), and the other where p corre-sponds to L and q corresponds to H, (L/a2 b2H L/a2), and if a1=a2 and bl=b2, the two stacks will have similar spectral performance.
For example, the two stacks (L/2 H L/2) and (H/2 L
H/2) are both of the form (pqp). The only difference is that the H and L have been swapped. Spectrally their performance is similar. The location of the high reflec-tion and transmission regions are the same. The only difference is the amplitude of the ripple in the trans-mission regions. This is shown graphically in Figs. 1 and 2. Fig. l shows a stack of the form (L/2 H L/2)8 and Fig.
2 shows a stack of the form (H/2 L H/2)8. In Figs. 1 and 2, the value for L was 1.44 and the value for H was 2Ø
Using the interleaving technique, the stack described above would be ((L/2 H L/2) (H/2 L H/2))n and will be referred to as the basic stack when n=1. To achieve symmetry an (L/2 H L/2) will be added to the complete interleaved stack. This interleaved arrangement will yield a high reflection region whenever two properties aresatisfied. The first property requires that the basic ' .; . ... :
~ W093/09~9 2 ~ ~ 7 ~1 1 PCT/US92/090so : .. ..
stack's total equivalent phase thickness is an odd multiple of half wave thickness (i.e. t2j~
j=1,2,3,...). The second property requires that the ratio of the Herpin equivalent indices of the two (pqp) stacks `- 5 of the basic stack be greater or less than one. The further the ratio is from unity the higher the reflection.
The second property is the one that contributes to extending the high transmission regions and increasing the slopes at the edges of the high reflection regions. For the basic stack ((L/2 H L/2) (H/2 L H/2))n designed with a center wavelength at 1500nm the high reflection regions will occur at wavelengths 3000nm, lOOOnm, 600nm, 428nm, 333nm, 272, 230 and 200nm with minor peaks at 3000nm, 428nm, 333nm and 200nm. All the major peaks have effec-tive indice ratios of 2.983/1.062 or 2.-1 and all minor peaks have effective indice ratios of 1.623/1.952 or .831.
This is arrived at by calculating the ratio of the effective index of refraction for each Herpin equivalent layer in the interleaved stack. Shown in Table 1 are the effective index and effective phase thickness at selected wavelength for a Herpin equivalent stac~ of the form (L/2 H L/2) wherein H=2.2 and L=1.44. Table 2 shows similar data for a Herpin equivalent stac~ of the form (H/2 L
H/2).
Table 1. Herpin equivalent (L/2 H L/2) Wavelength Effective Index Effective Phase Thickness 3000 1.952 92.61 1000 1.062 262.39 600 1.062 452.61 429 1.952 627.39 333 1.952 812.61 273 1.062 987.39 231 1.062 172.61 200 1.952 1347.39 H=2~2 L=1.44 .. . , ~ . ~ , . . .. .
W093/09~9 2 ~ 9 7 ~ ~ 1 PCT/US92/09050~
Table 2. Herpin equivalent (H/2 L H/2) Wavelength Effective Index Effective Phase Thickness 3000 1.623 92.61 lO00 2.983 267.39 ; 600 2.983 452.61 429 1.623 627.39 -333 1.623 812.61 273 2.983 987.39 231 2.983 1172.61 200 1.623 1347.39 H=2.2 L=1.44 Shown in Figs. 3 and 4 are graphs of the wavelength versus reflectance for an interleaved stack made from the Herpin equivalents shown in Tables 1 and 2. As can be seen the interleaving technique allows the suppression of reflection peaks whenever property one is satisfied and property two has a ratio that approaches unity.
To achieve the bandwidths necessary for an IR reflec-tive coating with a high transmission region from 400nm to 770nm and a high reflection region from 800nm to 1800nm the thickness of the q layer in the (pqp) stack needs to be increased. Through trial and error experiments it i8 found that if the basic stack has the- form ((L/2 3H L/2) (H/2 3L H/2))n and the center wavelength of the stack is 425nm a major peak will occur near 1700 nm and 340nm with a minor peak near 566nm. Since the ratio of the effective indices at the minor peak is approximately .91 this peak is effectively suppressed. Therefore, the interleaving technique has achieved a bandwidth for the high transmis-sion region greater than 1000 nm. If two interleavedstacks of this form are used along with a standard Herpin stack an IR reflective stack with the performance described above can be achieved. The complete stack configuration, also shown in Fig. 9, is:
.` . ~ ~, .
i WO 93/09449 2 ~ 9 7 ~ 1 1 PCI`/US92/09050 --7_ AIR
_________________ ___ __--___-------------------- --------(L/2 H L/2) ~o=950nm _________________ ___________________________________ ______________ ~
( (L/2 3H L/2) (H/2 3L H/2) ) (L/2 3 H L/2) Ao=325nm _______________ ((L/2 3H L/2) (H/2 3L H/2))3 (L/2 3 H L/2) ~o=425nm ____________________________________________________________________ GLASS
This stack has some ripple in the passband that needs to be suppressed. This is done in two ways. First matching layer~ are placed on either side of the int- -lea~ed stacks. Matching layers are of the form LL H/~.25 and H/2.25 and are shown in the arrangement below. The matching layers shown are not in parenthesis. Second the minor peak associated wi_h the interleaved stacks is further suppressed by simply making the eighth wave layers, those designated by L/2 and H/2, slightly thinner.
The final stack arrangement, also shown in Fig. 10, is:
AIR
________ ___________________________________________________________ (L/2 H L/2)4 ~o=950 _ _ _---------- 3 LL H/2.25 ((L/2.25 3H L/2.25) (H/2.25 3L H/2.25)) ~o=325nm .
(L/2.25 3H L/2.25) H/2.25 ____________________________________________________________________ LL H/2.25 ((L/2.25 3H L/2.25) (H/2.25 3L H/2.25))3 ~o=425nm (L/2.25 3H L/2.25) H/2.25 ______________________________ _____.. ._____________________________ GL~-In order to test the technigue of interleaving similar stacks, an interleaved stack of the form H/2.25 I(L/2.25 3H L/2.2S) (H/2.25 3L H/2.25)] (L/2.25 3H
~VY'i'~l W093/09~9 PCT/US92/0905 L/2.25) H/2.25 was manufactured and the results were compared with the predicted results. Each stack of the form (L/2.25 3H L/2.25) or (H/2.25 3L H/2.25) was designed for a center wavelength of 425 nm. The low index of 5 refraction material had a value of 1.44 and the high index of refraction material had a value of 2Ø Fig. 5 shows the predicted performance of reflectivity vers~s wave-length while Fig. 6 shows the measured performance of transmission versus wavelength. As can be seen the 10 predicted and measured results are in clo6e agreement thus, proving that the interleaving of similar stacks is practical for producing IR reflective coatings.
The indices of the materials used to manufacture this coating should be about 1.40-1.50 for the low index 15 material and 2.0-2.2 for the high index material. Silicon dioxide would be the logical choice for the low index material and a material such as titanium oxide, tantalum oxide, or zirconium oxide for the high index material. It i~ not the absolute value of the index of refraction of the high or low material but the ratio between the high index material and the low index material.
Fig. 7 shows a comparison of the reflectance of interleaved stacks of the present invention with prior art 6tacks (2:1) published in UK Patent Application 2103830A.
Fig. 7 shows that the interleaved stacks allows transmit-tance of light over a greater wavelength window (-400nm to 800nm) than in the 2:1 stack.
Fig. 8 shows a comparison of the reflectance of the interleaved stacks of the preqent invention with prior art st~cks (3 material~ published in European Patent Applica-tion 90307792.3. Fig. 8 shows that the interleaved stacks perform comparably to the 3 material stacks.
While there has been shown and described what is at present the preferred embodiments of the invention, various alternations and modifications will be obvious to ..
~ W093/09449 2 0 9 7 ~ 1 1 PCT/US92/09050 _9_ thosc skilled in the art. All such modifications are intended to fall within the scope of the appended claims.
~IN-FILM STACKS.
The present invention describes a novel procedure for g designing thin film filters using the technique of inter-leaving similar stacks. The resultant interleaved stacks can be used to make filters with extended ripple free passbands and reflectors with steep slopes.
This novel technique was developed becau~e of the 10 need to make IR reflective coatings with wide passbands in the visible portion of the spectrum. Two prior techniques for achieving this performance are the "2:1 stack" and stacks that re~uire three materials with different indices of refraction typically designated as H=>high, L=>low and M=>medium.
The 2:1 stacks are two materia~ stacks with layers alternating between the H (high) ar~i ~ (low) indices of refraction and having optical phase ~nicknesses such ,nat either the H or L material is twice the optical phase thickness of the other. The disadvantage of this stack is, the visible passband is set by this stack and is narrow compared to the three material stacks or the interleaving technique to be described.
The three material stacks have passbands that are wide and whose edges are not defined by one stack. The passband is typically described by two stacks centered at somewhat different wavelengths. One stack is of the three material ty,pe and centered at the longer wavelength. The other stack is typically a standard quarter-wave stack (i.e. alternating H and L layers with quarter-wave optical phase thicknesses) and centered at the shorter wavelength.
The disadvantage of these stacks is, three materials with the appropriate indices of refraction must be used or one of the three indices must be synthesized from the other two.
' - - - . ::
: . . , . ~ : - . . .
The novel technique of interleaving similar thin-film stacks eliminates the need to utilize stacks comprising three materials. The interleaving technique also achieves bandwidths in the passband similar to the three material techni~ue.
The present invention describes an interference coating for reflecting infrared radiation and transmitting visible light. The coating is formed from one or more interleaved stacks and a third standard quarter wave stack. An interleaved stack is made from two similar stacks. The first stack is made of three layers of the form (L/a bH L/a). The second stack is made of three layers of the form (H/a bL H/a). The interleaved stack is a plurality of a combined first and second stack and is of the form [(L/a bH L/a) (H/a bL H/a)]. L and H refer to materials of low and high indices of refraction respec-tively a and b refer to the thickn~ess of each layer.
In the drawings:
FIGURE 1 shows reflectivity versus wavelength for a stack of the form [L/2 H L/2] ;
FIGURE 2 shows reflectivity versus wavelength for a stack of the form lH/2 L H/2~8;
FIGURE 3 shows reflectivity versus wavelength for an interleaved stack of the form (L/2 H L/2 H/2 L H/2)3 (L/2 H L/2) from 200 to lOO0 nm;
FIGURE 4 shows reflectivity versus wavelength for a interleaved stack of the form (L/2 H L/2 H/2 L H/2)3 30 (L/2 H L/2) from 600 to 3000 nm;
FIGURE 5 shows predicted reflectivity versus wave-length for an interleaved stack designed for a center wavelength of 425 nm;
FIGURE 6 shows actual transmission versus wavelength for the interleaved stack used in Fig. 5;
.. , ..~
~ ~ , . . .
W093/09~9 PCT/US92/O90S0 -- 2a~7sll -FIGURE 7 shows a comparison of the reflectance of an IR reflector designed around interleaved stacks of the present invention with an IR reflector designed around a 2:1 type stack;
FIGURE 8 shows a comparison of the reflectance of an IR reflector designed around interleaved stacks of the present invention with an IR reflector designed around a three material stack;
FIGURE 9 is a schematic cross sectional view, not to 10 scale, of an optical interference coating for reflecting infrared radiation in accordance with one embodiment of the invention;
FIGURE lO is a schematic cross sectional view, not to scale, of an optical interference coating for reflecting 15 infrared radiation in accordance with another embodiment of the invention. ~-For a better understanding of the present invention, together with other and further advantages thereof, reference is made to the following description and ap-pended claims in connection with the above-described drawing.
The novel technique of interleaving similar thin-film stacks begins with the work of LI Epstien and his descrip-tion of Herpin equivalent layers. A Herpin equivalent stack in its simplest form can be described with the notation (pqp). Where p and q are typically two materials of H-high and L-low indices of refraction. The arrange-ment of the H and L materials are such that the outerlayers, the layers designated by p, have the same index of refraction and the same optical and physical thicknesses.
This arrangement makes it simple to calculate what is known as the effective index and optical phase thickness at a particular wavelength. The interleaving technique .. ~ ' ' ~ .' ` ~ . . .
- . . .
W093/09449 2 0 9 7 ~ ~ ~ PCr/US92/09050~
. .,~. i.
use6 this information to predict the regions of high reflectivity and high transmission.
A standard thin film filter is typically made by depositing multiple Herpin equivalent stacks. The nota-S tion for this type of stack arrangement is (pqp)n. Wheren is the number of times the stack is repeated. Using this notation and calculating the effective indices and phase thicknesses it is found that whenever the effective index is much greater than or less than l.OO, if the incident medium is air, and the effective phase thickness of the basic period (pqp) is an odd multiple of a half- -wave, (i.e. (2j-1)~, j=1,2,3,...) there will be a region of high reflectance. Also, if two stacks are considered, one of the form (pqp) where p correspond to H (high index of refraction), and q corresponds to L (low index of refraction) (H/a1 ~1L H/a1), and the other where p corre-sponds to L and q corresponds to H, (L/a2 b2H L/a2), and if a1=a2 and bl=b2, the two stacks will have similar spectral performance.
For example, the two stacks (L/2 H L/2) and (H/2 L
H/2) are both of the form (pqp). The only difference is that the H and L have been swapped. Spectrally their performance is similar. The location of the high reflec-tion and transmission regions are the same. The only difference is the amplitude of the ripple in the trans-mission regions. This is shown graphically in Figs. 1 and 2. Fig. l shows a stack of the form (L/2 H L/2)8 and Fig.
2 shows a stack of the form (H/2 L H/2)8. In Figs. 1 and 2, the value for L was 1.44 and the value for H was 2Ø
Using the interleaving technique, the stack described above would be ((L/2 H L/2) (H/2 L H/2))n and will be referred to as the basic stack when n=1. To achieve symmetry an (L/2 H L/2) will be added to the complete interleaved stack. This interleaved arrangement will yield a high reflection region whenever two properties aresatisfied. The first property requires that the basic ' .; . ... :
~ W093/09~9 2 ~ ~ 7 ~1 1 PCT/US92/090so : .. ..
stack's total equivalent phase thickness is an odd multiple of half wave thickness (i.e. t2j~
j=1,2,3,...). The second property requires that the ratio of the Herpin equivalent indices of the two (pqp) stacks `- 5 of the basic stack be greater or less than one. The further the ratio is from unity the higher the reflection.
The second property is the one that contributes to extending the high transmission regions and increasing the slopes at the edges of the high reflection regions. For the basic stack ((L/2 H L/2) (H/2 L H/2))n designed with a center wavelength at 1500nm the high reflection regions will occur at wavelengths 3000nm, lOOOnm, 600nm, 428nm, 333nm, 272, 230 and 200nm with minor peaks at 3000nm, 428nm, 333nm and 200nm. All the major peaks have effec-tive indice ratios of 2.983/1.062 or 2.-1 and all minor peaks have effective indice ratios of 1.623/1.952 or .831.
This is arrived at by calculating the ratio of the effective index of refraction for each Herpin equivalent layer in the interleaved stack. Shown in Table 1 are the effective index and effective phase thickness at selected wavelength for a Herpin equivalent stac~ of the form (L/2 H L/2) wherein H=2.2 and L=1.44. Table 2 shows similar data for a Herpin equivalent stac~ of the form (H/2 L
H/2).
Table 1. Herpin equivalent (L/2 H L/2) Wavelength Effective Index Effective Phase Thickness 3000 1.952 92.61 1000 1.062 262.39 600 1.062 452.61 429 1.952 627.39 333 1.952 812.61 273 1.062 987.39 231 1.062 172.61 200 1.952 1347.39 H=2~2 L=1.44 .. . , ~ . ~ , . . .. .
W093/09~9 2 ~ 9 7 ~ ~ 1 PCT/US92/09050~
Table 2. Herpin equivalent (H/2 L H/2) Wavelength Effective Index Effective Phase Thickness 3000 1.623 92.61 lO00 2.983 267.39 ; 600 2.983 452.61 429 1.623 627.39 -333 1.623 812.61 273 2.983 987.39 231 2.983 1172.61 200 1.623 1347.39 H=2.2 L=1.44 Shown in Figs. 3 and 4 are graphs of the wavelength versus reflectance for an interleaved stack made from the Herpin equivalents shown in Tables 1 and 2. As can be seen the interleaving technique allows the suppression of reflection peaks whenever property one is satisfied and property two has a ratio that approaches unity.
To achieve the bandwidths necessary for an IR reflec-tive coating with a high transmission region from 400nm to 770nm and a high reflection region from 800nm to 1800nm the thickness of the q layer in the (pqp) stack needs to be increased. Through trial and error experiments it i8 found that if the basic stack has the- form ((L/2 3H L/2) (H/2 3L H/2))n and the center wavelength of the stack is 425nm a major peak will occur near 1700 nm and 340nm with a minor peak near 566nm. Since the ratio of the effective indices at the minor peak is approximately .91 this peak is effectively suppressed. Therefore, the interleaving technique has achieved a bandwidth for the high transmis-sion region greater than 1000 nm. If two interleavedstacks of this form are used along with a standard Herpin stack an IR reflective stack with the performance described above can be achieved. The complete stack configuration, also shown in Fig. 9, is:
.` . ~ ~, .
i WO 93/09449 2 ~ 9 7 ~ 1 1 PCI`/US92/09050 --7_ AIR
_________________ ___ __--___-------------------- --------(L/2 H L/2) ~o=950nm _________________ ___________________________________ ______________ ~
( (L/2 3H L/2) (H/2 3L H/2) ) (L/2 3 H L/2) Ao=325nm _______________ ((L/2 3H L/2) (H/2 3L H/2))3 (L/2 3 H L/2) ~o=425nm ____________________________________________________________________ GLASS
This stack has some ripple in the passband that needs to be suppressed. This is done in two ways. First matching layer~ are placed on either side of the int- -lea~ed stacks. Matching layers are of the form LL H/~.25 and H/2.25 and are shown in the arrangement below. The matching layers shown are not in parenthesis. Second the minor peak associated wi_h the interleaved stacks is further suppressed by simply making the eighth wave layers, those designated by L/2 and H/2, slightly thinner.
The final stack arrangement, also shown in Fig. 10, is:
AIR
________ ___________________________________________________________ (L/2 H L/2)4 ~o=950 _ _ _---------- 3 LL H/2.25 ((L/2.25 3H L/2.25) (H/2.25 3L H/2.25)) ~o=325nm .
(L/2.25 3H L/2.25) H/2.25 ____________________________________________________________________ LL H/2.25 ((L/2.25 3H L/2.25) (H/2.25 3L H/2.25))3 ~o=425nm (L/2.25 3H L/2.25) H/2.25 ______________________________ _____.. ._____________________________ GL~-In order to test the technigue of interleaving similar stacks, an interleaved stack of the form H/2.25 I(L/2.25 3H L/2.2S) (H/2.25 3L H/2.25)] (L/2.25 3H
~VY'i'~l W093/09~9 PCT/US92/0905 L/2.25) H/2.25 was manufactured and the results were compared with the predicted results. Each stack of the form (L/2.25 3H L/2.25) or (H/2.25 3L H/2.25) was designed for a center wavelength of 425 nm. The low index of 5 refraction material had a value of 1.44 and the high index of refraction material had a value of 2Ø Fig. 5 shows the predicted performance of reflectivity vers~s wave-length while Fig. 6 shows the measured performance of transmission versus wavelength. As can be seen the 10 predicted and measured results are in clo6e agreement thus, proving that the interleaving of similar stacks is practical for producing IR reflective coatings.
The indices of the materials used to manufacture this coating should be about 1.40-1.50 for the low index 15 material and 2.0-2.2 for the high index material. Silicon dioxide would be the logical choice for the low index material and a material such as titanium oxide, tantalum oxide, or zirconium oxide for the high index material. It i~ not the absolute value of the index of refraction of the high or low material but the ratio between the high index material and the low index material.
Fig. 7 shows a comparison of the reflectance of interleaved stacks of the present invention with prior art 6tacks (2:1) published in UK Patent Application 2103830A.
Fig. 7 shows that the interleaved stacks allows transmit-tance of light over a greater wavelength window (-400nm to 800nm) than in the 2:1 stack.
Fig. 8 shows a comparison of the reflectance of the interleaved stacks of the preqent invention with prior art st~cks (3 material~ published in European Patent Applica-tion 90307792.3. Fig. 8 shows that the interleaved stacks perform comparably to the 3 material stacks.
While there has been shown and described what is at present the preferred embodiments of the invention, various alternations and modifications will be obvious to ..
~ W093/09449 2 0 9 7 ~ 1 1 PCT/US92/09050 _9_ thosc skilled in the art. All such modifications are intended to fall within the scope of the appended claims.
Claims (6)
1. An optical interference coating for reflecting infrared radiation and transmitting visible light com-prising:
one or more interleaved stacks said interleaved stacks comprising a first stack containing three alterna-ting layers of high and low refractive index materials of form (L/a bH L/a), and a second stack containing three alternating layers of high and low refractive index materials of the form (H/a bL H/a) wherein a and b are predetermined values, and a ? 1.75;
and wherein L and H are a low and a high index of refraction material respectively, L and H each being defined as having an optical thickness of a multiple of a quarter-wave of the stack wavelength.
one or more interleaved stacks said interleaved stacks comprising a first stack containing three alterna-ting layers of high and low refractive index materials of form (L/a bH L/a), and a second stack containing three alternating layers of high and low refractive index materials of the form (H/a bL H/a) wherein a and b are predetermined values, and a ? 1.75;
and wherein L and H are a low and a high index of refraction material respectively, L and H each being defined as having an optical thickness of a multiple of a quarter-wave of the stack wavelength.
2. The coating of claim 1 further comprising a stack of the form (L/a bH L/a) added to one side of the one or more interleaved stacks to achieve symmetry.
3. The coating of claim 1 further comprising one or more stacks of the form (L/2 H L/2) added to the one or more interleaved stacks to define the trans-mission bandwidth for an IR reflector.
4. The coating of claim 2 further comprising one or more stacks of the form (L/2 H L/2) added to the one or more interleaved stacks to define the trans-mission bandwidth for an IR reflector.
5. The coating of claim 1 wherein the low refractive index material has a value of between approximately 1.40-1.50 and the high index of refraction material has a value of between approximately 2.0-2.2.
6. The coating of claim 1 wherein the values of a and b are defined as 1.75?a?2.5 and 2.75?b?3.25.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/787,855 US5179468A (en) | 1991-11-05 | 1991-11-05 | Interleaving of similar thin-film stacks for producing optical interference coatings |
| US07/787,855 | 1991-11-05 | ||
| PCT/US1992/009050 WO1993009449A1 (en) | 1991-11-05 | 1992-10-26 | Optical interference coating comprising interleaved thin-film stacks |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2097811A1 true CA2097811A1 (en) | 1993-05-06 |
Family
ID=25142716
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002097811A Abandoned CA2097811A1 (en) | 1991-11-05 | 1992-10-26 | Optical interference coating comprising interleaved thin-film stacks |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5179468A (en) |
| EP (1) | EP0565703B1 (en) |
| CA (1) | CA2097811A1 (en) |
| DE (1) | DE69220775T2 (en) |
| WO (1) | WO1993009449A1 (en) |
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| CA1177704A (en) * | 1981-07-20 | 1984-11-13 | James D. Rancourt | Optical coatings for high temperature applications |
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-
1991
- 1991-11-05 US US07/787,855 patent/US5179468A/en not_active Expired - Lifetime
-
1992
- 1992-10-26 WO PCT/US1992/009050 patent/WO1993009449A1/en active IP Right Grant
- 1992-10-26 CA CA002097811A patent/CA2097811A1/en not_active Abandoned
- 1992-10-26 DE DE69220775T patent/DE69220775T2/en not_active Expired - Fee Related
- 1992-10-26 EP EP92924118A patent/EP0565703B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0565703B1 (en) | 1997-07-09 |
| DE69220775D1 (en) | 1997-08-14 |
| US5179468A (en) | 1993-01-12 |
| WO1993009449A1 (en) | 1993-05-13 |
| EP0565703A1 (en) | 1993-10-20 |
| DE69220775T2 (en) | 1998-02-12 |
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