CA2099500C - Source follower storage cell and improved method and apparatus for iterative write for integrated circuit analog signal recording and playback - Google Patents
Source follower storage cell and improved method and apparatus for iterative write for integrated circuit analog signal recording and playback Download PDFInfo
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- CA2099500C CA2099500C CA002099500A CA2099500A CA2099500C CA 2099500 C CA2099500 C CA 2099500C CA 002099500 A CA002099500 A CA 002099500A CA 2099500 A CA2099500 A CA 2099500A CA 2099500 C CA2099500 C CA 2099500C
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
- G11C27/005—Electric analogue stores, e.g. for storing instantaneous values with non-volatile charge storage, e.g. on floating gate or MNOS
Abstract
Source follower storage cell and improved method and appar-atus for iterative write for integrated circuit analog recording and playback which provides increased resolution in the stored signal and increased accuracy and stability of the storage and readout capa-bilities of the device. The storage cell is configured wherein the elec-trically alterable MOS storage device is connected in a source follow-er configuration, which provides a one to one relationship between the variation in the floating gate storage charge and the variation in the output voltage, and for high load resistance, relative insensitivity to load characteristics. The write process and circuitry provides a multi-iterative programming technique wherein a series of coarse pulses program a cell to the approximate desired value, with a series of fine pulses, referenced to the last coarse pulse being used for pro-gramming the respective cell, programming the cell in fine incre-ments to a desired final programming level. Still finer levels of pro-gramming can be used.
Description
~ooo~oo WO 9?/12519 PCT/t1~91/a9665 IMPROVED METHOD AIdD APPARATUS FOR TTERATIVE
TdRITE FOR TNTEGRATED CIRCUIT
ANALOG SIGNAL RECORDTNG AND PLAYBACK
BACKC.ROLINn nF THE . TNV hTTpN
1. Field of th Inv n~;nn The present relates to the field of non-volatile integrated circuit analog signal recording and playback whesein an analog signal is directly stored in and read out from a storage cell.
TdRITE FOR TNTEGRATED CIRCUIT
ANALOG SIGNAL RECORDTNG AND PLAYBACK
BACKC.ROLINn nF THE . TNV hTTpN
1. Field of th Inv n~;nn The present relates to the field of non-volatile integrated circuit analog signal recording and playback whesein an analog signal is directly stored in and read out from a storage cell.
2 . P'r"i Or Art U.S. Patent No. 9,890,259 discloses a high density integrated circuit analog signal recording and playback system wherein an analog input signal is sampled a plurality of times and then, as additional samples are being taken and temporarily held, a prior set of samples of the analog signal are parallel loaded into a plurality of storage sites or cells, each comprising nonvalatile floating gate memory cells, preferably EEPROM cells. In that system, writing of the groups of samples into the respective storage cells is done by repetitively providing a write pulse followed by a read operation for the respective cells to compare the information stored in each cel l with the information held by the respective sample and hold cireuit. During the successive write read operations, the write pulse is increased in amplitude, With the write pulse to any cell being stopped or deeoupled from the cell when the information read from the cell in the last read operation equaled the value held in the respective sample and hold circuit. To provide time for the successive write read operations, a plurality of sample and hold circuits are provided so that an equal plurality of cells may be loaded ar written to at one time. Still, because of practical limitations in the number of sample and hold circuits which may be provided and the limited length of time the integrated circuit sample and hold circuits will accurately hold the same values once taken, the length of time available for writing the sample signals to the WO 92/12519 ~ ~ ~ PCf/U~91/0966~
storage cells in this parallel load fashion is limited. Thus, because each write read cycle takes a finite amount of time, the ' number of such cycles which may be completed before the same number of samples has again been taken and must similarly be loaded is limited. This in turn limits the resolution of the stored information. which may be achieved by each write pulse while still allowing for properly storing samples which may be at either extreme of the storage range, particularly considering temperature variations, chip to chip processing variations and the like. _...._ .. ._. . _ ..
U.S. Patent No. 4,627,027 discloses analog storage and reproducing apparatus utilizing nonvolatile memory elements.
The apparatus disclosed therein utilizes a source follower type floating gate storage cell in a device which writes to each cell in a single write operation, as opposed to an iterative write process wherein successive write read operations provide and verify storage of the desired analog signal. In the ' implementation used in this patent the write circuits are completely separate from the read circuits so that during read, any variation in the characteristics of the load will produce a corresponding variation~in the output. The constant current load, if ideal, would not create distortion but in reality any ,.
practical realization wbuld create some disturbance. In addition, the different conditions between read the write significantly reduce reproduction quality.
storage cells in this parallel load fashion is limited. Thus, because each write read cycle takes a finite amount of time, the ' number of such cycles which may be completed before the same number of samples has again been taken and must similarly be loaded is limited. This in turn limits the resolution of the stored information. which may be achieved by each write pulse while still allowing for properly storing samples which may be at either extreme of the storage range, particularly considering temperature variations, chip to chip processing variations and the like. _...._ .. ._. . _ ..
U.S. Patent No. 4,627,027 discloses analog storage and reproducing apparatus utilizing nonvolatile memory elements.
The apparatus disclosed therein utilizes a source follower type floating gate storage cell in a device which writes to each cell in a single write operation, as opposed to an iterative write process wherein successive write read operations provide and verify storage of the desired analog signal. In the ' implementation used in this patent the write circuits are completely separate from the read circuits so that during read, any variation in the characteristics of the load will produce a corresponding variation~in the output. The constant current load, if ideal, would not create distortion but in reality any ,.
practical realization wbuld create some disturbance. In addition, the different conditions between read the write significantly reduce reproduction quality.
BRIEF SUMMARY OF THE INVENTION
Source follower storage cell and improved method and apparatus for iterative write for integrated circuit analog recording and playback which provides increased resolution in the stored signal and increased accuracy and stability of the storage and readout capabilities of the device. The storage cell is configured wherein the electrically alterable MOS storage device is connected in a source follower configuration, which provides a one to one relationship between the variation in the floating gate storage charge and the variation in the output voltage, and for high load resistance, relative insensitivity to load characteristics. The write process and circuitry provides a multi iterative programming technique wherein a series of coarse pulses program a cell to the approximate desired value, with a series of fine pulses referenced to the last coarse pulse being used for programming the respective cell in fine increments to a desired final programming level. Still finer levels of programming can be used.
3a Accordingly, in one aspect, the present invention provides a method of storing signal samples for integrated circuit analog recording and subsequent playback comprising the steps of:
(a) providing a plurality of storage cells, each having a floating gate MOS storage device connectable in a source follower read configuration;
(b) taking a plurality of samples of an analog signal and temporarily holding the same in an equal plurality of sample and hold circuits;
(c) providing a first series of programming pulses of increasing amplitude to each of the MOS storage cells;
(d) after each programming pulse of step (c), reading the MOS storage cells and comparing each signal read therefrom with the signal temporarily held in the respective sample and hold circuit;
(e) for each respective MOS storage cell, terminating the application of the first series of programming pulses of step (c) to the respective MOS
storage cell when the signal read from the respective storage cell in step (d) reaches a predetermined relationship to the signal held in the respective sample and hold circuit;
3b (f) providing a second series of programming pulses of increasing amplitude to each of the MOS storage cells;
(g) after each programming pulse of step (f), reading the MOS storage cells and comparing each signal read therefrom with the signal temporarily held in the respective sample and hold circuit; and, (h) for each respective MOS storage cell, terminating the application of the second series of programming pulses of step (f) to the respective MOS
storage cell when the signal read from the respective storage cell in step (g) reaches a predetermined relationship to the signal held in the respective sample and hold circuit.
In another aspect, the present invention provides an apparatus for storing a signal sample for integrated circuit analog recording and subsequent playback comprising: a storage cell having a floating gate MOS
storage device connectable in a source follower read configuration; means for providing a first series of programming pulses of increasing amplitude to the MOS
storage cell; means for reading the MOS storage cell after each programming pulse and comparing the signal read therefrom with the signal sample desired to be written thereto; means for terminating the application of 3c the first series of programming pulses to the MOS storage cell when the signal read from the storage cell reaches a predetermined relationship to the signal sample to be recorded; and, wherein said means for reading after each programming pulse is also a means for subsequently reading the MOS storage cell for playback, whereby the read operations when writing a signal sample to the MOS
storage cell are the same as the read operations for playback.
In still another aspect, the present invention provides an apparatus for storing signal samples for integrated circuit analog recording and subsequent playback comprising: a plurality of storage cells, each having a floating gate MOS storage device connectable in a source follower read configuration; a plurality of sample and hold circuits for taking an equal plurality of samples of an analog signal and temporarily holding the same; first means for providing a first series of programming pulses of increasing amplitude to each of the MOS storage cells; second means for reading the MOS
storage cells after each programming pulse and comparing each signal read therefrom with the signal temporarily held in the respective sample and hold circuit; third means for terminating the application of the first series 3d of programming pulses to the respective MOS storage cell for each respective MOS storage cell when the signal read from the respective storage cell by the second means reaches a predetermined relationship to the signal held in the respective sample and hold circuit; fourth means for providing a second series of programming pulses of increasing amplitude to each of the MOS storage cells;
the second means also being a means for reading the MOS
storage cells after each programming pulse of the second series and comparing each signal read therefrom with the signal temporarily held in the respective sample and hold circuit; and, fifth means for terminating the application of the second series of programming pulses to the respective MOS storage cell when the signal read from the respective storage cell by the second means reaches a predetermined relationship to the signal held in the respective sample and hold circuit.
In a further aspect, the present invention provides A method of iterative writing a signal sample to a non-volatile floating gate type integrated circuit storage cell for integrated circuit analog recording and subsequent playback comprising the steps of:
(a) providing a first series of programming voltage pulses of increasing amplitude to the storage cell;
3e (b) after each programming voltage pulse of step (a), reading the storage cell and comparing the signal read therefrom with the signal sample desired to be written thereto;
(c) terminating the application of the first series of programming voltage pulses to the storage cell when the signal read from the storage cell in step (b) reaches a first predetermined relationship to the signal sample to be recorded;
(d) providing a second series of programming voltage pulses of increasing amplitude to the storage cell, the second series of programming voltage pulses increasing in amplitude in smaller increments than the first series of programming voltage pulses;
(e) after each programming voltage pulse of step (d), reading the storage cell and comparing the signal read therefrom with the signal sample desired to be written thereto; and, (f) terminating the application of the second series of programming voltage pulses to the storage cell when the signal read from the storage cell in step (e) reaches a second predetermined relationship to the signal sample to be recorded.
3f In a still further aspect, the present invention provides an apparatus for writing a signal sample to a non-volatile floating gate type integrated circuit storage cell in an integrated circuit analog recording and playback system comprising: first means for providing a first series of programming voltage pulses of increasing amplitude to the storage cell; second means for reading the storage cell after each programming voltage pulse and comparing the signal read therefrom with the signal sample desired to be written thereto;
third means for terminating the application of the first series of programming voltage pulses to the storage cell by the first means when the signal read from the storage cell by the second means reaches a first predetermined relationship to the signal sample to be recorded; fourth means for providing a second series of programming voltage pulses of increasing amplitude to the storage cell, the second series of programming voltage pulses increasing in smaller increments than the first series of programming voltage pulses of the first means; the second means also being a means for reading the storage cell and comparing the signal read therefrom with the signal sample desired to be written thereto after each programming voltage pulse of the second series; and, 3g fifth means for terminating the application of the second series of programming voltage pulses to the storage cell when the signal read from the storage cell reaches a second predetermined relationship to the signal sample to be recorded.
W092/12519 ~~~~~~~
PCT/1JS91/0966~ ' e.
Figure 1 is a schematic circuit diagram of a part of a memory array and associated circuitry of an analog storage device in accordance with the present invention.
Figure 2 is a schematic block diagram of a part of a memory array and associated circuitry of an analog storage device in accordance with an alternate and preferred embodiment of the present invention.
Figure 3 is a detailed schematic diagram for the diagram o°
Figure 2.
!V~ 92/12519 fC'T/lJS91 /0966b D .TAT . .D D . RTDTTI7Fv f1F Tug Tay~NTT(1N
First referring to Figure 1, a basic implementation of the present invention may be seen. This figure represents a section of a typical memory array with one column driver consisting of comparator COMP, latch, high voltage (HV) switch and column load, column multiplexer comprising switches CMl to CMm and a memory array consisting of n rows and m columns of transistor pairs Snm and Fnm. This figure of course is representative of one specific embodiment as, for example, there may be more than ----- - -- one -column driver multiplexed (or not multiplexed) into the -array, there may be more than one level of multiplexing of each column driver into the array, etc. Also the figure shows a single common nade UCCA, but it may equally be separated into different nodes. For the purposes of the description of the first embodiment disclosed herein, the high voltage switch is shown as a simple switch, though in another embodiment disclosed herein the same eonsists of two switches, together with means to superimpose a fine adjustment voltage on a coarse voltage. to more accurately program the storage cell within the typical available time for doing so.
A recording is made by the following sequence. The cells to be written (programmed) are first erased (cleared). This is done by applying a 'nigh voltage to the clear gate CGn while maintaining a low voltage on the drain of the cell. Tn the preferred embodiment circuits, each row has an independent connection on order to facilii:ate the clearing of each row 'saiuep~IW Gi~i,ly vlsi.iiOuL disi.ur'viy i.iae analog samples recorded in other parts of the memory. The low drain voltage 3s achieved by applying a low voltage to VCCA. Since the high voltage on the clear gate causes the floating gate transistor to be in a conductive state, the low voltage is transposed to the drain.
WO92/125~~~~~~
p~,T/~IS9a/09665. "
It would also be possible to apply the drain voltage through the column and select gate. , The voltage to be written is applied to ANALOG IN, a SET
signal is applied to set the latch and turn on the HV switch, CL , is taken low, all CG lines are taken low, and the desired column multiplex lines (CMm) and select gate lines (SGn) ase taken high. Unselected columns and rows have their CM and SG lines low. The first high voltage pulse is then applied to HV and via the CMm and SGn transistors to the drain of the addressed cell.
The level on CMm and SGn must be sufficient to pass the desired level onto the cell drain. In the preferred embodiment, CM and SG are higher than HV so that HV, the regulated signal, is connected onto the drain without any loss of voltage. It would also be possible to xegulate CM and/or SG in order ~to pass the desired level onto the drain. As HV is applied to the drain, VCCA is also brought positive. In the preferred embodiment the UCCA level, at this point in the procedure, is abaut 7 volts-this being higher than the maximum level to which the fnm transistor would otherwise pull UCCA by follower action. (Note that although CGn is at VSS, the capacitive coupling onto the floating gate causes the transistor to conduct even though it may be strongly cleared.) The purpose is to ensure that the column voltage does not become suppressed due to a current path ,..
to UCCA. Non-Suppression of UCCA could also be achieved by allowing UCCA to float, which may be satisfactory for VCCA nodes , with small capacitance values and high voltage sources with low source imyeuaa~ae values. ~?hese values generally do not occur in practice. Now that the cell is in this writing condition, electron tunneling may occur from floating gate to drain, resulting in a net increase in the positive charge residing on the float gate. After a certain time period HV (and UCCA) is W'O 9x/12519 PCf/1_1591 /09666 brought low - in the preferred embodiment and the discharge rate is controlled to avoid unnecessary perturbations onto other nodes.
The cell is now configured into the read mode. CL is taken high (connecting the current load onto the column),CMm and SGn remain high to keep the same cell addressed (although not necessarily at the same high voltages as before) and UCCA is taken to a positive voltage. Note that this configuration is a reversal from digital memories where the VCCA node would be -grounded:- The total resistance of the Snm transistor and the column multiplex transistors) should be small compared to the effective resistance of the load. The clear gate CGn voltage is taken to a fixed level which is chosen to optimize the voltage storage range - in the case of the preferred embodiment both UCCA and CGn are connected to 9V, The voltage which is now output on the column is compared with ANALOG IN. EN is brought high and if ANALOG OUT is greater than ANALOG TN, the output of ' the comparator goes high and resets the latch. The HV switch is thus opened and the subsequent HV pulses are not connected to the cell. (Typically such high voltage pulses are of successively increasing amplitude.) If, however, ANALOG OUT is less than ANALOG IN, then the latch remains set and the next HV
pulse is applied to the cell and the cells obtains another increment of tunnel current. The cell is alternatively configured in write mode and then read mode until a comparison is reached or a maximum number of cycles has been reached.
Tu play hack visa r.ei:usu.iuy, i.iae circuit is configured continuously into the read mode. The configuration and the cell operating conditions are exactly the same as during the rarite comparison and thus an accurate reproduction is achieved.
CVO 92/lz 1 PCC/L~S9i/0966f '.
The resolution of analog recording is improved if the voltage increment on the EEPROM floating gate resulting from ' each high voltage iteration is as small as possible. In the ' case of commercially available speech recording devices, resolutions range from 6 bits to 16 bits of equivalent digital resolution. The recording method employed herein causes the voltage on the floating gate to be incremented during each high voltage pulse. The resolution achieved depends on the width o°
the high voltage write pulses and also on the amount of voltage increment between each successive pulse. Better resolutipn (i.e. smaller voltage increments) is achieved with narrow pulses ' and/or with smaller voltage increments of the high voltage pulse. However, this means that to cover the same range of floating gate voltages (i.e. the same dynamic range), there must be an increased number of applied high voltage pulses. In a given recording architecture there is a certain amount of time available to perform the writing of one row before beginning the write of the next row. This limits the number of pulses which can be applied and consequently limits the resolution which caa be achieved. If the high voltage pulses increase linearly over the complete range, then each increment would give.approximately equal increments to the floating gate. The first few pulses (which generally would follow an erase cycle) would probably cause a larger increment than subsequent pulses, but this is the major exception.
The technique used in the preferred circuit of Figure 2 uses i.wo bursts o~ voltage poises (the method could be extended to more bursts). The first burst of pulses has monotonically increasing voltage levels (beginning with a level which produces a weakly programmed cell and ending with a level which produces a strongly programmed cell - i.e. from VVO 92/12519 ~ ~ ~ pGT/CJS91/09666 8 volts to 18 volts). These will be called the coarse pulses. Coarse pulses are applied to the cell until the cell reaches a point where an additional pulse would program it to '.
a level which is beyond the desired level. A second burst of pules is now applied which has a reduced voltage increment between adjacent pulses. These are termed the fine pulses.
The voltage level of the first pulse in the fine burst is related to the level of the last coarse pulse applied to the cell. It can be the same level, slightly higher or sliahtlv lower, but -the--impora ant thing is that it is function of the last coarse pulse height. Fine pulses are applied to the cell until the cell is programmed to the desired level. The voltage level of the fine pulses may also have monotonically increasing values, but the voltage increment is much smaller than the increment during the coarse cycle. The fine pulses may also be of a narrower width than the coarse pulses.
In this seheme, the resolution of the floating gate voltage isI determined by the voltage increment attained during the fine cycle. The voltage range, however, is determined by the coarse cycle.
Consider an ideal situation where:
Vr = Dynamic voltage range.
Vc ~ Floating gate voltage increment during coarse pulses Vf = Floating gate voltage increment during fine pulses Nc = Number of coarse pulse s ::i ~ ;dunlbGr ~~ iinG wises Then, Nc ~ Vr/Vc Nf m Vc/Vf and 2~9~5~D~
CVO 92/12519 PCT/U~911~)9~C>f ._ Ntotal = Nc + Nf If the circuit did not use this dual (or multi) increment technique however, and the same resolution was required, then the total number of pulses required to cover the range would be:
Ntotal = Vr/Vf = Vr/(VC/Nf) = Nc*Nf As an example, suppose we have a range of 1V, a coarse increment of O.1V and a fine increment of lOmV. Using the dual increment technique a total of 20 high voltages would be ~reauired versus 100 pulses with pulses o-f uniformly increasing magnitude.
In practice, the number of pulses required is greater than the ideal case because: 1) one must begin the coarse high voltage pulses at a lower level and continue past the ideal high level in order to account fox manufacturing tolerances which change the relationship between the applied high voltage signals and the resulting voltages on the floating gate (e.g. variations in tunnel threshold). This is necessary when using either technique. 2) there must be a sufficient number of fine pulses to cover the complete voltage span of a single coarse step. At the upper end this is a similar problem to 1), but at the lower end it is due to practica'_ities in circuits which are used to implement the technique.
A block diagram of a circuit which utilises a dual increment (coarse/fine) technique is shown in Figure 2. In aririitinn tn thn nnmpnn~r~~ ~a ri'~r.. :., h c~.rG iJ Gil CdII.TG
switch SW2, transistors T1, T2 and T~, capacitor C1 and a voltage summing junction. To initialize the circuit, a pulse is applied to C1.SET to set the latch, CENis set high to close SW2 and a pulse is applied to RCAQEN to discharge C1. The BYO 92/12519 ~ ~ ~ ~ ~ ~ PCT/L'S9y/09666 burst of course pulses is then applied to CHV and consequently is also applied to the cell provided that the latch remains set and SW1 is closed, as described previously.
One important difference with this implementation compared to the basic circuit is that the connection of CHV to COLN is through the transistor T1, T1 requires a voltage on its gate which, in turn is provided by SW2 and T2. During the time that the cell voltage is read and compared with ANALOG IN, a voltage Vos is added to the voltage on COLIC The value of Vos is equal to or slightly greater than the floating gate voltage increment that results from a single coarse pulse.
Adding Vos before the comparison is made with ANALOG IN
ensures that the latch is reset one coarse pulse earlier than would otherwise occur. At this time, the latch is~reset and the cell is thus programmed to a level which is no more than one coarse increment below the desired level. Also the gate voltage on T1 which corresponds to the last coarse pulse before comparison is stored on C1.
The latch is now set once more by applying a pulse to CLSET, CEN is taken low to open SW2 and the second burst of high voltage (fine) pulses are applied to CHV. These pulses are all of maximum amplitude, but the voltage which is transferred into COLN through T1 depends on the stored level on C1 and the follower action of T1. The stored level on C1 is modulated by the signal FV, which in the preferred embodiment, is a ramp which begins at a low level (VSS) a~
L.. L~.m~e..~:..a .C L.. G.... ' 1 ' ' >, taaG uG~.auair.uy Via. taaG a..taaG Vy..iC Gtdlld L.LJCJ tV C1 ll.LgllCS 1CVC1 (2V) at the end of the fine cycle. The magnitude of the high voltage pulses which are connected to the cell during the fine cycle is therefore dependent on the highest value reached during the coarse cycle and with increasing '~'O92/12519 P~:T/8J591/09b6~' .
., amplitudes as determined by FV. As with. the coarse cycle, after each high voltage pulse the cell voltage is read and compared with ANALOG TN. During the fine cycle, however, Vos is held at VSS and the cell voltage is incremented in fine increments until a comparison is made.
Figure 3 shows a detailed schematic of the circuit. T2, T3, T4, T6, T8 together with C1 and C2 create an offset canceled comparator; T5, T7, T9, T10, T11, T12, T13 and T19 create an additional gain stage and latch; T15, T16, T17, T1B, T23 and C3 create a high voltage switch; T19, T20, T21, T22, T29 and C9 create another high voltage switch; C5 is a holding capacitor and T29 acts as a source follower.
The write sequence begins with an erase cycle. Tn the following description it is assumed that the addressed cell has already been fully erased. 'When reading, the call is configured in a source follower mode as previously described.
The signal VCL applies a bias to T32 such that T30, T31, and I T32 act as a load to VSS. (T30 is included to increase the voltage breakdown on the COLN node). This technique could also be utilized if the cell were configured in the arrangement which is more conventional to memory arrays, but.
an inversion would be necessary (for instance between the cell and COLN).
At the beginning of the write (programming) cycle, a negative pulse is applied to CLSET and a positive pulse is applied to RCAPEN. This sets the latch (HVEN goes high) and uischarges CS to GV. VCViyiP provides a bias such that T9 and T5 act as high impedance load devices. Likewise, VCOLHV
cause T18 and T22 to behave as load devices, in this case to VSS. P/R is held low and is only allowed to go high during playback. CEN is initially held low. CL is low during write W~ 9'2/12519 ~ ~ ~ ~ ~ ~ ~ P~f/U~91/09666 lj and high during read. The voltage which is desired to be written into the EEPROM cell is applied to ASAMPN. The first high voltage pulse of the coarse cycle is applied to CHV. It could typically be about lOV amplitude with a finite rise time and pulse duration. Since HVEN is low, T17 is off and the voltage on the gate of T23 rises as a result of the CHV
ramp on C3. Other capacitances on the gate of T23 are small relative to C3 and consequently there is very little capacitive or voltage division. There is also the self bootstrap effect of T23 itself and so the gate of T23 increases in voltage by an amount almost equal to CHV. The start-ing voltage on T23 gate Was (VCC - Vt) or about 9V, so with Vt typically about 1V, the transistor T23 is turned fully on and CHV is conducted onto C4. The components T1S, T16, T17, and T18, T23 and C3 operate like a high voltage switch enabled by HVEN (other implementations of the switch are possible). In a similar fashion, the other switch using T29 also conducts and C5 is charged to (CHV - Vt) - the Vt drop is due to T25. T29 now 'conducts and allows CON to rise to (CHV - Vt - Vtn). Vt is the enhancement threshold (of T25), and Vtn is the threshold of native transistor T29. It is assumed that the Vt of T28 is less than or equal to T25.
Hence the CHV pulse is applied to COLN and subsequently to the cell with a small amount of voltage drop due to thresholds. Aftex CHV is returned to its low level, the voltage read from the cell is compared with ASAMPN. CCTC and CCr are inverse signals; CCi; is iraitialiy high and c~ate~
ASAP3PN on to C1 via T2. T6 is also driven by CCFC and biases the inventor T8/T4 in lts linear legion and cancels the offset. T7 gate has the same voltage as (matched) T8 and its source is at VSS, so the invPrtor T5, T7, T9 is also in the ~~~950~
'VO 92/12519 PCT/US91 /9i9~6~ .....
i4 linear region. CCK then goes low and CCK goes high. The eell has since been configured in its read mode and thus the ' cell voltage is coupled onto C1. The change in voltage on the LHS of C1 is coupled onto the gate of T8. (It is important that CCK goes low before CCK goes high in order to ensure that there is no charge loss through T6).
Simultaneously, a positive going signal is applied to Vos (in the preferred embodiment it is 1.5V, derived from analog signal ground) and couples additional charge onto T8. The value of capacitor-C2 is chosen so as to couple charge that is equivalent to a voltage slightly greater than the voltage increment that results on the floating gate during each coarse pulse. Since the invertar is in its linear region, the change at the gate of T8 causes a corresponding change in the drain of TB,.multiplied by the'gain of the investor. The size of T6 is kept small so as to minimize the capacitive coupling from CCK to. the input of the invertor. The coupling can be reduced further by connecting an equal capacitor to the gate of T8 but within equal and opposite phase of signal.
This can be a "dummy" transistor similar to T6, or, as is often done, it can be a P-channel transistor in parallel with T6 and driven by an opposite signal. these steps were not taken, however, because the offset introduced here is a systematic offset which is equal in all similar circuits, including the reference circuit and is therefore canceled , out. If the comparator were realized by some of the other tcCuaus~ta~5, Sui:ii a5 s.i~USC WYth differential input pairs or trans,istars, the random offset is ultimately superimposed on the recorded cell voltage. The comparator circuit is thus realized with a small number of components. The gain of the invertor (and the subsequent stage T7), can be increased by WU 92/12519 ~ ~ PCT/'L~S9R/09666 using a high impedance load device. In the case of this implementation the high impedance is achieved by using current mirror devices T9 and TS in their saturated regions.
With the change is state of CCK and CCK, an amplified difference level exists on the gate of T7. After a short settling time, COMPEN is brought low. The drain of T7 was previously held low by T10, but it now is allowed to function as an additional gain stage, providing an amplified, nonivested difference level at this point. The transistors T11 through T14 -form a CMOS nand gate which is connect ed in a cross-coupled latch arrangement with the last gain stage.
Tzansistors T5, T7, T9 and T10 serve a dual function - a gain stage and a latch. If the cell voltage plus the 0.2V offset caused by Vos is less than ASAMPN the latch remains set (HVEN
is high); if the cell voltage plus 0.2V is greater than ASAMP
the latch becomes reset when enabled by COMPEN. The comparator is sensitive to input differences in the order of lmV. The systematic offset due to T6 coupling is about l7mV, which is expected to be consistent to within 2mV across chip.
With 3mV of overdrive the latch settles to the final logic state in 1 microsecond.
The signal HVEN is used to enable the first switch an the high voltage path. As long as the latch remains set, the switch is enabled and CHV pulses of continually increasing magnitude are applied to the cell. After the latch has been reset, the switch is disabled. CHV pulses may continue to be supplied, but they do not pass through the switch transistor T23 and no further coarse pulses are applied to COhN (the cell). The voltage on C4 has.been increasing during each CHV
pulse that HVEN was low. ,After H'~TEN goes high and the switch WO 92/12519 PCT/US91/0966f ' T23 stays open, the highest value reached is retained due to the diode action of T25 (RCAPEN is held low).
CHV pulses continue until their voltage level (and the number of pulses) has been sufficient to strongly program a cell. In this preferred design and process, the maximum CHV ..
level is 21V. After the last coarse CHV pulse, all latches in the column driver circuits should have been set (provided that all the ASAt~N voltage levels are in the dynamic signal range).
The fine cycle noii Begins. ~- ~CEN is taken high, thus disabling the second switch; CLSET is pulsed low and then high again, resetting the latch and enabling the first switch. Another burst of CHV pulses is supplied, this time of equal magnitude (21V) but with half the repetition period of the coarse pulses. The shorter pulses allow a smaller .
amount of charge to be tunneled onto the floating gate during each high voltage pulse, as well as allowing more pulses of smaller voltage increments. The CHV pulses which are input to' the circuit are of maximum amplitude, but the voltage which is applied to COLN depends on the stored voltage on the gate of T29 and the high voltage storage capacitor. As COLN
rises with CHV, the coupling action onto the gate returns the gate voltage to precisely the sums level that existed during the last coarse pulse and consequently the level applied to COLN is the same level as.that which was applied during the last coarse pulse. There is provision in the circuit for a~~iy.~ug ac3ju~imCaii.~ tU i.iie W L?v vi~li.eagc, iiUwaver. The bottom plate of CS is driven by another external signal FV.
The circuit would function if FV remained at a fixed voltage throughout the complete write ~operatian, but enhanced performance is attained by manipulating FV. The preferred b WO 92/i2519 PCT/US9i/09666 implementation of the circuit and its support circuits applies a ramp to Fv. During the coarse cycle, FV is held at a fixed level of about 2V and is brought to OV at the beginning of the fine cycle. FV camps up linearly from OV at the beginning of the fine cycle to 2v at the end of the fine cycle. This ramp is superimposed on the stored on C5 and consequently on the voltage amplitude of the high voltage pulses applied to COLN.
During the fine cycle, Vos is held at a fixed voltage - and not pulsed, as was the case during the coarse cycle.--Thus the cell floating gate continues to increment in fine voltage steps until the read voltage is greater than AHAMPN, at which time the latch is set, switch T23 remains open and the cell does not receive any further pulses.
3n the preferred embodiment, the coarse and fine programming characteristics are as follows;
Number of coarse pulses 45 Number of fine pulses 90 Minimum coarse CHV voltage 11V
Maximum coarse CHV voltage 21V
Minimum coarse COLN voltage 9V
Maximum coarse COLN voltage 18V
Coarse CHV rise time 42Gmv/)lsec Fine CHV rise time 840mv/)tsec Coarse CHV pulse width (@ lv) 100 ~tsec Fine CAV pulse width (@ 1V) ~0 ~isec rw ramp 0 - 2v Vos pulse height 1.5V
In the embodiment of the invention just described and for both series of programming pulses, once the read a;nd compare operations find that the desired programming level 2~~~~~~f 9~V~ 92/12519 PCT/US91/n9~fiE
~. a for that series of pulses has been reached, a latch blocks further programming pulses of that series from passing to the Cell, even though the read and compare operations are in fact continued until the end of the respective series of programming pulses. The continuance of the read and compare operations is an arbitrary design choice, but the blocking of further programming pulses of that series from passing to the cell once the desired compare is obtained is important, as otherwise subsequent noise might disturb a subsequent compare operation, allowing a much-higher pulse of that series to pass to the cell, resulting in a single but large programming increment above the programming level desired.
While the preferred embodiment of the present invention has been disclosed and described herein, it will be obvious to those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope thereof.
Source follower storage cell and improved method and apparatus for iterative write for integrated circuit analog recording and playback which provides increased resolution in the stored signal and increased accuracy and stability of the storage and readout capabilities of the device. The storage cell is configured wherein the electrically alterable MOS storage device is connected in a source follower configuration, which provides a one to one relationship between the variation in the floating gate storage charge and the variation in the output voltage, and for high load resistance, relative insensitivity to load characteristics. The write process and circuitry provides a multi iterative programming technique wherein a series of coarse pulses program a cell to the approximate desired value, with a series of fine pulses referenced to the last coarse pulse being used for programming the respective cell in fine increments to a desired final programming level. Still finer levels of programming can be used.
3a Accordingly, in one aspect, the present invention provides a method of storing signal samples for integrated circuit analog recording and subsequent playback comprising the steps of:
(a) providing a plurality of storage cells, each having a floating gate MOS storage device connectable in a source follower read configuration;
(b) taking a plurality of samples of an analog signal and temporarily holding the same in an equal plurality of sample and hold circuits;
(c) providing a first series of programming pulses of increasing amplitude to each of the MOS storage cells;
(d) after each programming pulse of step (c), reading the MOS storage cells and comparing each signal read therefrom with the signal temporarily held in the respective sample and hold circuit;
(e) for each respective MOS storage cell, terminating the application of the first series of programming pulses of step (c) to the respective MOS
storage cell when the signal read from the respective storage cell in step (d) reaches a predetermined relationship to the signal held in the respective sample and hold circuit;
3b (f) providing a second series of programming pulses of increasing amplitude to each of the MOS storage cells;
(g) after each programming pulse of step (f), reading the MOS storage cells and comparing each signal read therefrom with the signal temporarily held in the respective sample and hold circuit; and, (h) for each respective MOS storage cell, terminating the application of the second series of programming pulses of step (f) to the respective MOS
storage cell when the signal read from the respective storage cell in step (g) reaches a predetermined relationship to the signal held in the respective sample and hold circuit.
In another aspect, the present invention provides an apparatus for storing a signal sample for integrated circuit analog recording and subsequent playback comprising: a storage cell having a floating gate MOS
storage device connectable in a source follower read configuration; means for providing a first series of programming pulses of increasing amplitude to the MOS
storage cell; means for reading the MOS storage cell after each programming pulse and comparing the signal read therefrom with the signal sample desired to be written thereto; means for terminating the application of 3c the first series of programming pulses to the MOS storage cell when the signal read from the storage cell reaches a predetermined relationship to the signal sample to be recorded; and, wherein said means for reading after each programming pulse is also a means for subsequently reading the MOS storage cell for playback, whereby the read operations when writing a signal sample to the MOS
storage cell are the same as the read operations for playback.
In still another aspect, the present invention provides an apparatus for storing signal samples for integrated circuit analog recording and subsequent playback comprising: a plurality of storage cells, each having a floating gate MOS storage device connectable in a source follower read configuration; a plurality of sample and hold circuits for taking an equal plurality of samples of an analog signal and temporarily holding the same; first means for providing a first series of programming pulses of increasing amplitude to each of the MOS storage cells; second means for reading the MOS
storage cells after each programming pulse and comparing each signal read therefrom with the signal temporarily held in the respective sample and hold circuit; third means for terminating the application of the first series 3d of programming pulses to the respective MOS storage cell for each respective MOS storage cell when the signal read from the respective storage cell by the second means reaches a predetermined relationship to the signal held in the respective sample and hold circuit; fourth means for providing a second series of programming pulses of increasing amplitude to each of the MOS storage cells;
the second means also being a means for reading the MOS
storage cells after each programming pulse of the second series and comparing each signal read therefrom with the signal temporarily held in the respective sample and hold circuit; and, fifth means for terminating the application of the second series of programming pulses to the respective MOS storage cell when the signal read from the respective storage cell by the second means reaches a predetermined relationship to the signal held in the respective sample and hold circuit.
In a further aspect, the present invention provides A method of iterative writing a signal sample to a non-volatile floating gate type integrated circuit storage cell for integrated circuit analog recording and subsequent playback comprising the steps of:
(a) providing a first series of programming voltage pulses of increasing amplitude to the storage cell;
3e (b) after each programming voltage pulse of step (a), reading the storage cell and comparing the signal read therefrom with the signal sample desired to be written thereto;
(c) terminating the application of the first series of programming voltage pulses to the storage cell when the signal read from the storage cell in step (b) reaches a first predetermined relationship to the signal sample to be recorded;
(d) providing a second series of programming voltage pulses of increasing amplitude to the storage cell, the second series of programming voltage pulses increasing in amplitude in smaller increments than the first series of programming voltage pulses;
(e) after each programming voltage pulse of step (d), reading the storage cell and comparing the signal read therefrom with the signal sample desired to be written thereto; and, (f) terminating the application of the second series of programming voltage pulses to the storage cell when the signal read from the storage cell in step (e) reaches a second predetermined relationship to the signal sample to be recorded.
3f In a still further aspect, the present invention provides an apparatus for writing a signal sample to a non-volatile floating gate type integrated circuit storage cell in an integrated circuit analog recording and playback system comprising: first means for providing a first series of programming voltage pulses of increasing amplitude to the storage cell; second means for reading the storage cell after each programming voltage pulse and comparing the signal read therefrom with the signal sample desired to be written thereto;
third means for terminating the application of the first series of programming voltage pulses to the storage cell by the first means when the signal read from the storage cell by the second means reaches a first predetermined relationship to the signal sample to be recorded; fourth means for providing a second series of programming voltage pulses of increasing amplitude to the storage cell, the second series of programming voltage pulses increasing in smaller increments than the first series of programming voltage pulses of the first means; the second means also being a means for reading the storage cell and comparing the signal read therefrom with the signal sample desired to be written thereto after each programming voltage pulse of the second series; and, 3g fifth means for terminating the application of the second series of programming voltage pulses to the storage cell when the signal read from the storage cell reaches a second predetermined relationship to the signal sample to be recorded.
W092/12519 ~~~~~~~
PCT/1JS91/0966~ ' e.
Figure 1 is a schematic circuit diagram of a part of a memory array and associated circuitry of an analog storage device in accordance with the present invention.
Figure 2 is a schematic block diagram of a part of a memory array and associated circuitry of an analog storage device in accordance with an alternate and preferred embodiment of the present invention.
Figure 3 is a detailed schematic diagram for the diagram o°
Figure 2.
!V~ 92/12519 fC'T/lJS91 /0966b D .TAT . .D D . RTDTTI7Fv f1F Tug Tay~NTT(1N
First referring to Figure 1, a basic implementation of the present invention may be seen. This figure represents a section of a typical memory array with one column driver consisting of comparator COMP, latch, high voltage (HV) switch and column load, column multiplexer comprising switches CMl to CMm and a memory array consisting of n rows and m columns of transistor pairs Snm and Fnm. This figure of course is representative of one specific embodiment as, for example, there may be more than ----- - -- one -column driver multiplexed (or not multiplexed) into the -array, there may be more than one level of multiplexing of each column driver into the array, etc. Also the figure shows a single common nade UCCA, but it may equally be separated into different nodes. For the purposes of the description of the first embodiment disclosed herein, the high voltage switch is shown as a simple switch, though in another embodiment disclosed herein the same eonsists of two switches, together with means to superimpose a fine adjustment voltage on a coarse voltage. to more accurately program the storage cell within the typical available time for doing so.
A recording is made by the following sequence. The cells to be written (programmed) are first erased (cleared). This is done by applying a 'nigh voltage to the clear gate CGn while maintaining a low voltage on the drain of the cell. Tn the preferred embodiment circuits, each row has an independent connection on order to facilii:ate the clearing of each row 'saiuep~IW Gi~i,ly vlsi.iiOuL disi.ur'viy i.iae analog samples recorded in other parts of the memory. The low drain voltage 3s achieved by applying a low voltage to VCCA. Since the high voltage on the clear gate causes the floating gate transistor to be in a conductive state, the low voltage is transposed to the drain.
WO92/125~~~~~~
p~,T/~IS9a/09665. "
It would also be possible to apply the drain voltage through the column and select gate. , The voltage to be written is applied to ANALOG IN, a SET
signal is applied to set the latch and turn on the HV switch, CL , is taken low, all CG lines are taken low, and the desired column multiplex lines (CMm) and select gate lines (SGn) ase taken high. Unselected columns and rows have their CM and SG lines low. The first high voltage pulse is then applied to HV and via the CMm and SGn transistors to the drain of the addressed cell.
The level on CMm and SGn must be sufficient to pass the desired level onto the cell drain. In the preferred embodiment, CM and SG are higher than HV so that HV, the regulated signal, is connected onto the drain without any loss of voltage. It would also be possible to xegulate CM and/or SG in order ~to pass the desired level onto the drain. As HV is applied to the drain, VCCA is also brought positive. In the preferred embodiment the UCCA level, at this point in the procedure, is abaut 7 volts-this being higher than the maximum level to which the fnm transistor would otherwise pull UCCA by follower action. (Note that although CGn is at VSS, the capacitive coupling onto the floating gate causes the transistor to conduct even though it may be strongly cleared.) The purpose is to ensure that the column voltage does not become suppressed due to a current path ,..
to UCCA. Non-Suppression of UCCA could also be achieved by allowing UCCA to float, which may be satisfactory for VCCA nodes , with small capacitance values and high voltage sources with low source imyeuaa~ae values. ~?hese values generally do not occur in practice. Now that the cell is in this writing condition, electron tunneling may occur from floating gate to drain, resulting in a net increase in the positive charge residing on the float gate. After a certain time period HV (and UCCA) is W'O 9x/12519 PCf/1_1591 /09666 brought low - in the preferred embodiment and the discharge rate is controlled to avoid unnecessary perturbations onto other nodes.
The cell is now configured into the read mode. CL is taken high (connecting the current load onto the column),CMm and SGn remain high to keep the same cell addressed (although not necessarily at the same high voltages as before) and UCCA is taken to a positive voltage. Note that this configuration is a reversal from digital memories where the VCCA node would be -grounded:- The total resistance of the Snm transistor and the column multiplex transistors) should be small compared to the effective resistance of the load. The clear gate CGn voltage is taken to a fixed level which is chosen to optimize the voltage storage range - in the case of the preferred embodiment both UCCA and CGn are connected to 9V, The voltage which is now output on the column is compared with ANALOG IN. EN is brought high and if ANALOG OUT is greater than ANALOG TN, the output of ' the comparator goes high and resets the latch. The HV switch is thus opened and the subsequent HV pulses are not connected to the cell. (Typically such high voltage pulses are of successively increasing amplitude.) If, however, ANALOG OUT is less than ANALOG IN, then the latch remains set and the next HV
pulse is applied to the cell and the cells obtains another increment of tunnel current. The cell is alternatively configured in write mode and then read mode until a comparison is reached or a maximum number of cycles has been reached.
Tu play hack visa r.ei:usu.iuy, i.iae circuit is configured continuously into the read mode. The configuration and the cell operating conditions are exactly the same as during the rarite comparison and thus an accurate reproduction is achieved.
CVO 92/lz 1 PCC/L~S9i/0966f '.
The resolution of analog recording is improved if the voltage increment on the EEPROM floating gate resulting from ' each high voltage iteration is as small as possible. In the ' case of commercially available speech recording devices, resolutions range from 6 bits to 16 bits of equivalent digital resolution. The recording method employed herein causes the voltage on the floating gate to be incremented during each high voltage pulse. The resolution achieved depends on the width o°
the high voltage write pulses and also on the amount of voltage increment between each successive pulse. Better resolutipn (i.e. smaller voltage increments) is achieved with narrow pulses ' and/or with smaller voltage increments of the high voltage pulse. However, this means that to cover the same range of floating gate voltages (i.e. the same dynamic range), there must be an increased number of applied high voltage pulses. In a given recording architecture there is a certain amount of time available to perform the writing of one row before beginning the write of the next row. This limits the number of pulses which can be applied and consequently limits the resolution which caa be achieved. If the high voltage pulses increase linearly over the complete range, then each increment would give.approximately equal increments to the floating gate. The first few pulses (which generally would follow an erase cycle) would probably cause a larger increment than subsequent pulses, but this is the major exception.
The technique used in the preferred circuit of Figure 2 uses i.wo bursts o~ voltage poises (the method could be extended to more bursts). The first burst of pulses has monotonically increasing voltage levels (beginning with a level which produces a weakly programmed cell and ending with a level which produces a strongly programmed cell - i.e. from VVO 92/12519 ~ ~ ~ pGT/CJS91/09666 8 volts to 18 volts). These will be called the coarse pulses. Coarse pulses are applied to the cell until the cell reaches a point where an additional pulse would program it to '.
a level which is beyond the desired level. A second burst of pules is now applied which has a reduced voltage increment between adjacent pulses. These are termed the fine pulses.
The voltage level of the first pulse in the fine burst is related to the level of the last coarse pulse applied to the cell. It can be the same level, slightly higher or sliahtlv lower, but -the--impora ant thing is that it is function of the last coarse pulse height. Fine pulses are applied to the cell until the cell is programmed to the desired level. The voltage level of the fine pulses may also have monotonically increasing values, but the voltage increment is much smaller than the increment during the coarse cycle. The fine pulses may also be of a narrower width than the coarse pulses.
In this seheme, the resolution of the floating gate voltage isI determined by the voltage increment attained during the fine cycle. The voltage range, however, is determined by the coarse cycle.
Consider an ideal situation where:
Vr = Dynamic voltage range.
Vc ~ Floating gate voltage increment during coarse pulses Vf = Floating gate voltage increment during fine pulses Nc = Number of coarse pulse s ::i ~ ;dunlbGr ~~ iinG wises Then, Nc ~ Vr/Vc Nf m Vc/Vf and 2~9~5~D~
CVO 92/12519 PCT/U~911~)9~C>f ._ Ntotal = Nc + Nf If the circuit did not use this dual (or multi) increment technique however, and the same resolution was required, then the total number of pulses required to cover the range would be:
Ntotal = Vr/Vf = Vr/(VC/Nf) = Nc*Nf As an example, suppose we have a range of 1V, a coarse increment of O.1V and a fine increment of lOmV. Using the dual increment technique a total of 20 high voltages would be ~reauired versus 100 pulses with pulses o-f uniformly increasing magnitude.
In practice, the number of pulses required is greater than the ideal case because: 1) one must begin the coarse high voltage pulses at a lower level and continue past the ideal high level in order to account fox manufacturing tolerances which change the relationship between the applied high voltage signals and the resulting voltages on the floating gate (e.g. variations in tunnel threshold). This is necessary when using either technique. 2) there must be a sufficient number of fine pulses to cover the complete voltage span of a single coarse step. At the upper end this is a similar problem to 1), but at the lower end it is due to practica'_ities in circuits which are used to implement the technique.
A block diagram of a circuit which utilises a dual increment (coarse/fine) technique is shown in Figure 2. In aririitinn tn thn nnmpnn~r~~ ~a ri'~r.. :., h c~.rG iJ Gil CdII.TG
switch SW2, transistors T1, T2 and T~, capacitor C1 and a voltage summing junction. To initialize the circuit, a pulse is applied to C1.SET to set the latch, CENis set high to close SW2 and a pulse is applied to RCAQEN to discharge C1. The BYO 92/12519 ~ ~ ~ ~ ~ ~ PCT/L'S9y/09666 burst of course pulses is then applied to CHV and consequently is also applied to the cell provided that the latch remains set and SW1 is closed, as described previously.
One important difference with this implementation compared to the basic circuit is that the connection of CHV to COLN is through the transistor T1, T1 requires a voltage on its gate which, in turn is provided by SW2 and T2. During the time that the cell voltage is read and compared with ANALOG IN, a voltage Vos is added to the voltage on COLIC The value of Vos is equal to or slightly greater than the floating gate voltage increment that results from a single coarse pulse.
Adding Vos before the comparison is made with ANALOG IN
ensures that the latch is reset one coarse pulse earlier than would otherwise occur. At this time, the latch is~reset and the cell is thus programmed to a level which is no more than one coarse increment below the desired level. Also the gate voltage on T1 which corresponds to the last coarse pulse before comparison is stored on C1.
The latch is now set once more by applying a pulse to CLSET, CEN is taken low to open SW2 and the second burst of high voltage (fine) pulses are applied to CHV. These pulses are all of maximum amplitude, but the voltage which is transferred into COLN through T1 depends on the stored level on C1 and the follower action of T1. The stored level on C1 is modulated by the signal FV, which in the preferred embodiment, is a ramp which begins at a low level (VSS) a~
L.. L~.m~e..~:..a .C L.. G.... ' 1 ' ' >, taaG uG~.auair.uy Via. taaG a..taaG Vy..iC Gtdlld L.LJCJ tV C1 ll.LgllCS 1CVC1 (2V) at the end of the fine cycle. The magnitude of the high voltage pulses which are connected to the cell during the fine cycle is therefore dependent on the highest value reached during the coarse cycle and with increasing '~'O92/12519 P~:T/8J591/09b6~' .
., amplitudes as determined by FV. As with. the coarse cycle, after each high voltage pulse the cell voltage is read and compared with ANALOG TN. During the fine cycle, however, Vos is held at VSS and the cell voltage is incremented in fine increments until a comparison is made.
Figure 3 shows a detailed schematic of the circuit. T2, T3, T4, T6, T8 together with C1 and C2 create an offset canceled comparator; T5, T7, T9, T10, T11, T12, T13 and T19 create an additional gain stage and latch; T15, T16, T17, T1B, T23 and C3 create a high voltage switch; T19, T20, T21, T22, T29 and C9 create another high voltage switch; C5 is a holding capacitor and T29 acts as a source follower.
The write sequence begins with an erase cycle. Tn the following description it is assumed that the addressed cell has already been fully erased. 'When reading, the call is configured in a source follower mode as previously described.
The signal VCL applies a bias to T32 such that T30, T31, and I T32 act as a load to VSS. (T30 is included to increase the voltage breakdown on the COLN node). This technique could also be utilized if the cell were configured in the arrangement which is more conventional to memory arrays, but.
an inversion would be necessary (for instance between the cell and COLN).
At the beginning of the write (programming) cycle, a negative pulse is applied to CLSET and a positive pulse is applied to RCAPEN. This sets the latch (HVEN goes high) and uischarges CS to GV. VCViyiP provides a bias such that T9 and T5 act as high impedance load devices. Likewise, VCOLHV
cause T18 and T22 to behave as load devices, in this case to VSS. P/R is held low and is only allowed to go high during playback. CEN is initially held low. CL is low during write W~ 9'2/12519 ~ ~ ~ ~ ~ ~ ~ P~f/U~91/09666 lj and high during read. The voltage which is desired to be written into the EEPROM cell is applied to ASAMPN. The first high voltage pulse of the coarse cycle is applied to CHV. It could typically be about lOV amplitude with a finite rise time and pulse duration. Since HVEN is low, T17 is off and the voltage on the gate of T23 rises as a result of the CHV
ramp on C3. Other capacitances on the gate of T23 are small relative to C3 and consequently there is very little capacitive or voltage division. There is also the self bootstrap effect of T23 itself and so the gate of T23 increases in voltage by an amount almost equal to CHV. The start-ing voltage on T23 gate Was (VCC - Vt) or about 9V, so with Vt typically about 1V, the transistor T23 is turned fully on and CHV is conducted onto C4. The components T1S, T16, T17, and T18, T23 and C3 operate like a high voltage switch enabled by HVEN (other implementations of the switch are possible). In a similar fashion, the other switch using T29 also conducts and C5 is charged to (CHV - Vt) - the Vt drop is due to T25. T29 now 'conducts and allows CON to rise to (CHV - Vt - Vtn). Vt is the enhancement threshold (of T25), and Vtn is the threshold of native transistor T29. It is assumed that the Vt of T28 is less than or equal to T25.
Hence the CHV pulse is applied to COLN and subsequently to the cell with a small amount of voltage drop due to thresholds. Aftex CHV is returned to its low level, the voltage read from the cell is compared with ASAMPN. CCTC and CCr are inverse signals; CCi; is iraitialiy high and c~ate~
ASAP3PN on to C1 via T2. T6 is also driven by CCFC and biases the inventor T8/T4 in lts linear legion and cancels the offset. T7 gate has the same voltage as (matched) T8 and its source is at VSS, so the invPrtor T5, T7, T9 is also in the ~~~950~
'VO 92/12519 PCT/US91 /9i9~6~ .....
i4 linear region. CCK then goes low and CCK goes high. The eell has since been configured in its read mode and thus the ' cell voltage is coupled onto C1. The change in voltage on the LHS of C1 is coupled onto the gate of T8. (It is important that CCK goes low before CCK goes high in order to ensure that there is no charge loss through T6).
Simultaneously, a positive going signal is applied to Vos (in the preferred embodiment it is 1.5V, derived from analog signal ground) and couples additional charge onto T8. The value of capacitor-C2 is chosen so as to couple charge that is equivalent to a voltage slightly greater than the voltage increment that results on the floating gate during each coarse pulse. Since the invertar is in its linear region, the change at the gate of T8 causes a corresponding change in the drain of TB,.multiplied by the'gain of the investor. The size of T6 is kept small so as to minimize the capacitive coupling from CCK to. the input of the invertor. The coupling can be reduced further by connecting an equal capacitor to the gate of T8 but within equal and opposite phase of signal.
This can be a "dummy" transistor similar to T6, or, as is often done, it can be a P-channel transistor in parallel with T6 and driven by an opposite signal. these steps were not taken, however, because the offset introduced here is a systematic offset which is equal in all similar circuits, including the reference circuit and is therefore canceled , out. If the comparator were realized by some of the other tcCuaus~ta~5, Sui:ii a5 s.i~USC WYth differential input pairs or trans,istars, the random offset is ultimately superimposed on the recorded cell voltage. The comparator circuit is thus realized with a small number of components. The gain of the invertor (and the subsequent stage T7), can be increased by WU 92/12519 ~ ~ PCT/'L~S9R/09666 using a high impedance load device. In the case of this implementation the high impedance is achieved by using current mirror devices T9 and TS in their saturated regions.
With the change is state of CCK and CCK, an amplified difference level exists on the gate of T7. After a short settling time, COMPEN is brought low. The drain of T7 was previously held low by T10, but it now is allowed to function as an additional gain stage, providing an amplified, nonivested difference level at this point. The transistors T11 through T14 -form a CMOS nand gate which is connect ed in a cross-coupled latch arrangement with the last gain stage.
Tzansistors T5, T7, T9 and T10 serve a dual function - a gain stage and a latch. If the cell voltage plus the 0.2V offset caused by Vos is less than ASAMPN the latch remains set (HVEN
is high); if the cell voltage plus 0.2V is greater than ASAMP
the latch becomes reset when enabled by COMPEN. The comparator is sensitive to input differences in the order of lmV. The systematic offset due to T6 coupling is about l7mV, which is expected to be consistent to within 2mV across chip.
With 3mV of overdrive the latch settles to the final logic state in 1 microsecond.
The signal HVEN is used to enable the first switch an the high voltage path. As long as the latch remains set, the switch is enabled and CHV pulses of continually increasing magnitude are applied to the cell. After the latch has been reset, the switch is disabled. CHV pulses may continue to be supplied, but they do not pass through the switch transistor T23 and no further coarse pulses are applied to COhN (the cell). The voltage on C4 has.been increasing during each CHV
pulse that HVEN was low. ,After H'~TEN goes high and the switch WO 92/12519 PCT/US91/0966f ' T23 stays open, the highest value reached is retained due to the diode action of T25 (RCAPEN is held low).
CHV pulses continue until their voltage level (and the number of pulses) has been sufficient to strongly program a cell. In this preferred design and process, the maximum CHV ..
level is 21V. After the last coarse CHV pulse, all latches in the column driver circuits should have been set (provided that all the ASAt~N voltage levels are in the dynamic signal range).
The fine cycle noii Begins. ~- ~CEN is taken high, thus disabling the second switch; CLSET is pulsed low and then high again, resetting the latch and enabling the first switch. Another burst of CHV pulses is supplied, this time of equal magnitude (21V) but with half the repetition period of the coarse pulses. The shorter pulses allow a smaller .
amount of charge to be tunneled onto the floating gate during each high voltage pulse, as well as allowing more pulses of smaller voltage increments. The CHV pulses which are input to' the circuit are of maximum amplitude, but the voltage which is applied to COLN depends on the stored voltage on the gate of T29 and the high voltage storage capacitor. As COLN
rises with CHV, the coupling action onto the gate returns the gate voltage to precisely the sums level that existed during the last coarse pulse and consequently the level applied to COLN is the same level as.that which was applied during the last coarse pulse. There is provision in the circuit for a~~iy.~ug ac3ju~imCaii.~ tU i.iie W L?v vi~li.eagc, iiUwaver. The bottom plate of CS is driven by another external signal FV.
The circuit would function if FV remained at a fixed voltage throughout the complete write ~operatian, but enhanced performance is attained by manipulating FV. The preferred b WO 92/i2519 PCT/US9i/09666 implementation of the circuit and its support circuits applies a ramp to Fv. During the coarse cycle, FV is held at a fixed level of about 2V and is brought to OV at the beginning of the fine cycle. FV camps up linearly from OV at the beginning of the fine cycle to 2v at the end of the fine cycle. This ramp is superimposed on the stored on C5 and consequently on the voltage amplitude of the high voltage pulses applied to COLN.
During the fine cycle, Vos is held at a fixed voltage - and not pulsed, as was the case during the coarse cycle.--Thus the cell floating gate continues to increment in fine voltage steps until the read voltage is greater than AHAMPN, at which time the latch is set, switch T23 remains open and the cell does not receive any further pulses.
3n the preferred embodiment, the coarse and fine programming characteristics are as follows;
Number of coarse pulses 45 Number of fine pulses 90 Minimum coarse CHV voltage 11V
Maximum coarse CHV voltage 21V
Minimum coarse COLN voltage 9V
Maximum coarse COLN voltage 18V
Coarse CHV rise time 42Gmv/)lsec Fine CHV rise time 840mv/)tsec Coarse CHV pulse width (@ lv) 100 ~tsec Fine CAV pulse width (@ 1V) ~0 ~isec rw ramp 0 - 2v Vos pulse height 1.5V
In the embodiment of the invention just described and for both series of programming pulses, once the read a;nd compare operations find that the desired programming level 2~~~~~~f 9~V~ 92/12519 PCT/US91/n9~fiE
~. a for that series of pulses has been reached, a latch blocks further programming pulses of that series from passing to the Cell, even though the read and compare operations are in fact continued until the end of the respective series of programming pulses. The continuance of the read and compare operations is an arbitrary design choice, but the blocking of further programming pulses of that series from passing to the cell once the desired compare is obtained is important, as otherwise subsequent noise might disturb a subsequent compare operation, allowing a much-higher pulse of that series to pass to the cell, resulting in a single but large programming increment above the programming level desired.
While the preferred embodiment of the present invention has been disclosed and described herein, it will be obvious to those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope thereof.
Claims (30)
1. A method of iterative writing a signal sample to a MOS storage cell for integrated circuit analog recording and subsequent playback comprising the steps of:
(a) providing a first series of programming pulses of increasing amplitude to the MOS storage cell;
(b) after each programming pulse of step (a), reading the MOS storage cell and comparing the signal read therefrom with the signal sample desired to be written thereto;
(c) terminating the application of the first series of programming pulses to the MOS storage cell when the signal read from the storage cell in step (b) reaches a predetermined relationship to the signal sample to be recorded;
(d) providing a second series of programming pulses of increasing amplitude to the MOS storage cell, the second series of programming pulses increasing in smaller increments than the first series of programming pulses;
(e) after each programming pulse of step (d), reading the MOS storage cell and comparing the signal read therefrom with the signal sample desired to be written thereto; and, (f) terminating the application of the second series of programming pulses to the MOS storage cell when the signal read from the storage cell in step (e) reaches a predetermined relationship to the signal sample to be recorded.
(a) providing a first series of programming pulses of increasing amplitude to the MOS storage cell;
(b) after each programming pulse of step (a), reading the MOS storage cell and comparing the signal read therefrom with the signal sample desired to be written thereto;
(c) terminating the application of the first series of programming pulses to the MOS storage cell when the signal read from the storage cell in step (b) reaches a predetermined relationship to the signal sample to be recorded;
(d) providing a second series of programming pulses of increasing amplitude to the MOS storage cell, the second series of programming pulses increasing in smaller increments than the first series of programming pulses;
(e) after each programming pulse of step (d), reading the MOS storage cell and comparing the signal read therefrom with the signal sample desired to be written thereto; and, (f) terminating the application of the second series of programming pulses to the MOS storage cell when the signal read from the storage cell in step (e) reaches a predetermined relationship to the signal sample to be recorded.
2. The method of claim 1 wherein the second series of programming pulses as applied to the MOS storage cell is referenced to the magnitude of the first series of programming pulses when the application of the first series of programming pulses to the MOS storage cell was terminated in step (c).
3. The method of claim 2 wherein each pulse in the second series of pulses are of shorter duration than the pulses in the first series of pulses.
4. The method of claim 3 wherein the maximum time allotted for the application of the second series of pulses is substantially equal to the maximum time allotted for the application of the first series of pulses.
5. The method of claim 1, 2, 3 or 4 wherein the MOS
storage cell comprises a floating gate MOS storage device connectable in a source follower read configuration, whereby there is a substantially one to one relationship between the voltage on the floating gate MOS storage device of a cell and the respective signal read therefrom.
storage cell comprises a floating gate MOS storage device connectable in a source follower read configuration, whereby there is a substantially one to one relationship between the voltage on the floating gate MOS storage device of a cell and the respective signal read therefrom.
6. The method of claim 5 wherein the reading of the MOS
storage cell of steps (b) and (e) is carried out in the same as subsequent playback of the signal sample written to the MOS storage cell.
storage cell of steps (b) and (e) is carried out in the same as subsequent playback of the signal sample written to the MOS storage cell.
7. A method of storing a signal sample for integrated circuit analog recording and subsequent playback comprising the steps of:
(a) providing a storage cell having a floating gate MOS storage device connectable in a source follower read configuration;
(b) providing a first series of programming pulses of increasing amplitude to the MOS storage cell;
(c) after each programming pulse of step (b), reading the MOS storage cell and comparing the signal read therefrom with the signal sample desired to be written thereto;
(d) terminating the application of the first series of programming pulses to the MOS storage cell when the signal read from the storage cell in step (c) reaches a predetermined relationship to the signal sample to be recorded; and, wherein the reading of the MOS storage cell of step (c) is carried out in the same way as subsequent playback of the signal sample written to the MOS storage cell.
(a) providing a storage cell having a floating gate MOS storage device connectable in a source follower read configuration;
(b) providing a first series of programming pulses of increasing amplitude to the MOS storage cell;
(c) after each programming pulse of step (b), reading the MOS storage cell and comparing the signal read therefrom with the signal sample desired to be written thereto;
(d) terminating the application of the first series of programming pulses to the MOS storage cell when the signal read from the storage cell in step (c) reaches a predetermined relationship to the signal sample to be recorded; and, wherein the reading of the MOS storage cell of step (c) is carried out in the same way as subsequent playback of the signal sample written to the MOS storage cell.
8. A method of storing signal samples for integrated circuit analog recording and subsequent playback comprising the steps of:
(a) providing a plurality of storage cells, each having a floating gate MOS storage device connectable in a source follower read configuration;
(b) taking a plurality of samples of an analog signal and temporarily holding the same in an equal plurality of sample and hold circuits;
(c) providing a first series of programming pulses of increasing amplitude to each of the MOS storage cells;
(d) after each programming pulse of step (c), reading the MOS storage cells and comparing each signal read therefrom with the signal temporarily held in the respective sample and hold circuit;
(e) for each respective MOS storage cell, terminating the application of the first series of programming pulses of step (c) to the respective MOS
storage cell when the signal read from the respective storage cell in step (d) reaches a predetermined relationship to the signal held in the respective sample and hold circuit;
(f) providing a second series of programming pulses of increasing amplitude to each of the MOS storage cells;
(g) after each programming pulse of step (f), reading the MOS storage cells and comparing each signal read therefrom with the signal temporarily held in the respective sample and hold circuit; and, (h) for each respective MOS storage cell, terminating the application of the second series of programming pulses of step (f) to the respective MOS
storage cell when the signal read from the respective storage cell in step (g) reaches a predetermined relationship to the signal held in the respective sample and hold circuit.
(a) providing a plurality of storage cells, each having a floating gate MOS storage device connectable in a source follower read configuration;
(b) taking a plurality of samples of an analog signal and temporarily holding the same in an equal plurality of sample and hold circuits;
(c) providing a first series of programming pulses of increasing amplitude to each of the MOS storage cells;
(d) after each programming pulse of step (c), reading the MOS storage cells and comparing each signal read therefrom with the signal temporarily held in the respective sample and hold circuit;
(e) for each respective MOS storage cell, terminating the application of the first series of programming pulses of step (c) to the respective MOS
storage cell when the signal read from the respective storage cell in step (d) reaches a predetermined relationship to the signal held in the respective sample and hold circuit;
(f) providing a second series of programming pulses of increasing amplitude to each of the MOS storage cells;
(g) after each programming pulse of step (f), reading the MOS storage cells and comparing each signal read therefrom with the signal temporarily held in the respective sample and hold circuit; and, (h) for each respective MOS storage cell, terminating the application of the second series of programming pulses of step (f) to the respective MOS
storage cell when the signal read from the respective storage cell in step (g) reaches a predetermined relationship to the signal held in the respective sample and hold circuit.
9. The method of claim 8 wherein the reading of the MOS
storage cell of step (d) is carried out in the same way as subsequent playback of the signal sample written to the MOS storage cell.
storage cell of step (d) is carried out in the same way as subsequent playback of the signal sample written to the MOS storage cell.
10. Apparatus for writing a signal sample to a MOS
storage cell in an integrated circuit analog recording and playback system comprising:
first means for providing a first series of programming pulses of increasing amplitude to the MOS
storage cell;
second means for reading the MOS storage cell after each programming pulse and comparing the signal read therefrom with the signal sample desired to be written thereto;
third means for terminating the application of the first series of programming pulses to the MOS storage cell by the first means when the signal read from the storage cell by the second means reaches a predetermined relationship to the signal sample to be recorded;
fourth means for providing a second series of programming pulses of increasing amplitude to the MOS
storage cell, the second series of programming pulses increasing in smaller increments than the first series of programming pulses of the first means;
the second means also being a means for reading the MOS storage cell and comparing the signal read therefrom with the signal sample desired to be written thereto after each programming pulse of the second series; and, fifth means for terminating the application of the second series of programming pulses to the MOS storage cell when the signal read from the storage cell reaches a predetermined relationship to the signal sample to be recorded.
storage cell in an integrated circuit analog recording and playback system comprising:
first means for providing a first series of programming pulses of increasing amplitude to the MOS
storage cell;
second means for reading the MOS storage cell after each programming pulse and comparing the signal read therefrom with the signal sample desired to be written thereto;
third means for terminating the application of the first series of programming pulses to the MOS storage cell by the first means when the signal read from the storage cell by the second means reaches a predetermined relationship to the signal sample to be recorded;
fourth means for providing a second series of programming pulses of increasing amplitude to the MOS
storage cell, the second series of programming pulses increasing in smaller increments than the first series of programming pulses of the first means;
the second means also being a means for reading the MOS storage cell and comparing the signal read therefrom with the signal sample desired to be written thereto after each programming pulse of the second series; and, fifth means for terminating the application of the second series of programming pulses to the MOS storage cell when the signal read from the storage cell reaches a predetermined relationship to the signal sample to be recorded.
11. The apparatus of claim 10 wherein the fourth means for providing the second series of programming pulses is a means referenced to the magnitude of the first series of programming pulses when the application of the first series of programming pulses to the MOS storage cell was terminated.
12. The apparatus of claim 11 wherein each pulse in the second series of pulses are of shorter duration than the pulses in the first series of pulses.
13. The apparatus of claim 12 wherein the maximum time of the second series of pulses is substantially equal to the maximum time of the first series of pulses.
14. The apparatus of any one of claims 10 to 13 wherein the MOS storage cell comprises a floating gate MOS
storage device connectable in a source follower read configuration, whereby there is a substantially one to one relationship between the voltage on the floating gate MOS storage device of a cell and the respective signal read therefrom.
storage device connectable in a source follower read configuration, whereby there is a substantially one to one relationship between the voltage on the floating gate MOS storage device of a cell and the respective signal read therefrom.
15. The apparatus of claim 14 wherein said second means is also a means for subsequently reading the MOS storage cell for playback, whereby the read operations when writing a signal sample to the MOS storage cell are the same as the read operations for playback.
16. Apparatus for storing a signal sample for integrated circuit analog recording and subsequent playback comprising:
a storage cell having a floating gate MOS storage device connectable in a source follower read configuration;
means for providing a first series of programming pulses of increasing amplitude to the MOS storage cell;
means for reading the MOS storage cell after each programming pulse and comparing the signal read therefrom with the signal sample desired to be written thereto;
means for terminating the application of the first series of programming pulses to the MOS storage cell when the signal read from the storage cell reaches a predetermined relationship to the signal sample to be recorded; and, wherein said means for reading after each programming pulse is also a means for subsequently reading the MOS storage cell for playback, whereby the read operations when writing a signal sample to the MOS
storage cell are the same as the read operations for playback.
a storage cell having a floating gate MOS storage device connectable in a source follower read configuration;
means for providing a first series of programming pulses of increasing amplitude to the MOS storage cell;
means for reading the MOS storage cell after each programming pulse and comparing the signal read therefrom with the signal sample desired to be written thereto;
means for terminating the application of the first series of programming pulses to the MOS storage cell when the signal read from the storage cell reaches a predetermined relationship to the signal sample to be recorded; and, wherein said means for reading after each programming pulse is also a means for subsequently reading the MOS storage cell for playback, whereby the read operations when writing a signal sample to the MOS
storage cell are the same as the read operations for playback.
17. Apparatus for storing signal samples for integrated circuit analog recording and subsequent playback comprising:
a plurality of storage cells, each having a floating gate MOS storage device connectable in a source follower read configuration;
a plurality of sample and hold circuits for taking an equal plurality of samples of an analog signal and temporarily holding the same;
first means for providing a first series of programming pulses of increasing amplitude to each of the MOS storage cells;
second means for reading the MOS storage cells after each programming pulse and comparing each signal read therefrom with the signal temporarily held in the respective sample and hold circuit;
third means for terminating the application of the first series of programming pulses to the respective MOS
storage cell for each respective MOS storage cell when the signal read from the respective storage cell by the second means reaches a predetermined relationship to the signal held in the respective sample and hold circuit;
fourth means for providing a second series of programming pulses of increasing amplitude to each of the MOS storage cells;
the second means also being a means for reading the MOS storage cells after each programming pulse of the second series and comparing each signal read therefrom with the signal temporarily held in the respective sample and hold circuit; and, fifth means for terminating the application of the second series of programming pulses to the respective MOS
storage cell when the signal read from the respective storage cell by the second means reaches a predetermined relationship to the signal held in the respective sample and hold circuit.
a plurality of storage cells, each having a floating gate MOS storage device connectable in a source follower read configuration;
a plurality of sample and hold circuits for taking an equal plurality of samples of an analog signal and temporarily holding the same;
first means for providing a first series of programming pulses of increasing amplitude to each of the MOS storage cells;
second means for reading the MOS storage cells after each programming pulse and comparing each signal read therefrom with the signal temporarily held in the respective sample and hold circuit;
third means for terminating the application of the first series of programming pulses to the respective MOS
storage cell for each respective MOS storage cell when the signal read from the respective storage cell by the second means reaches a predetermined relationship to the signal held in the respective sample and hold circuit;
fourth means for providing a second series of programming pulses of increasing amplitude to each of the MOS storage cells;
the second means also being a means for reading the MOS storage cells after each programming pulse of the second series and comparing each signal read therefrom with the signal temporarily held in the respective sample and hold circuit; and, fifth means for terminating the application of the second series of programming pulses to the respective MOS
storage cell when the signal read from the respective storage cell by the second means reaches a predetermined relationship to the signal held in the respective sample and hold circuit.
18. The apparatus of claim 17 wherein the plurality of MOS storage cells comprise a two dimensional array of MOS
storage cells.
storage cells.
19. A method of iterative writing a signal sample to a non-volatile floating gate type integrated circuit storage cell for integrated circuit analog recording and subsequent playback comprising the steps of:
(a) providing a first series of programming voltage pulses of increasing amplitude to the storage cell;
(b) after each programming voltage pulse of step (a), reading the storage cell and comparing the signal read therefrom with the signal sample desired to be written thereto;
(c) terminating the application of the first series of programming voltage pulses to the storage cell when the signal read from the storage cell in step (b) reaches a first predetermined relationship to the signal sample to be recorded;
(d) providing a second series of programming voltage pulses of increasing amplitude to the storage cell, the second series of programming voltage pulses increasing in amplitude in smaller increments than the first series of programming voltage pulses;
(e) after each programming voltage pulse of step (d), reading the storage cell and comparing the signal read therefrom with the signal sample desired to be written thereto; and, (f) terminating the application of the second series of programming voltage pulses to the storage cell when the signal read from the storage cell in step (e) reaches a second predetermined relationship to the signal sample to be recorded.
(a) providing a first series of programming voltage pulses of increasing amplitude to the storage cell;
(b) after each programming voltage pulse of step (a), reading the storage cell and comparing the signal read therefrom with the signal sample desired to be written thereto;
(c) terminating the application of the first series of programming voltage pulses to the storage cell when the signal read from the storage cell in step (b) reaches a first predetermined relationship to the signal sample to be recorded;
(d) providing a second series of programming voltage pulses of increasing amplitude to the storage cell, the second series of programming voltage pulses increasing in amplitude in smaller increments than the first series of programming voltage pulses;
(e) after each programming voltage pulse of step (d), reading the storage cell and comparing the signal read therefrom with the signal sample desired to be written thereto; and, (f) terminating the application of the second series of programming voltage pulses to the storage cell when the signal read from the storage cell in step (e) reaches a second predetermined relationship to the signal sample to be recorded.
20. The method of claim 19 wherein the second series of programming pulses as applied to the storage cell is referenced to the magnitude of the first series of programming pulses when the application of the first series of programming pulses to the storage cell was terminated in step (c).
21. The method of claim 20 wherein each pulse in the second series of pulses are of shorter duration than the pulses in the first series of pulses.
22. The method of claim 21 wherein the maximum time allotted for the application of the second series of pulses is substantially equal to the maximum time allotted for the application of the first series of pulses.
23. A method of storing signal samples for integrated circuit analog recording and subsequent playback comprising the steps of:
(a) providing a plurality of storage cells, each having a floating gate MOS storage device with a source, a drain and a control gate and connectable in a source follower read configuration;
(b) taking a plurality of samples of an analog signal and temporarily holding the same in an equal plurality of sample and hold circuits;
(c) providing a first series of programming voltage pulses of increasing amplitude to the drain of each of the MOS storage cells;
(d) after each programming voltage pulse of step (c), reading the MOS storage cells in the source follower read configuration and comparing each signal read therefrom with the signal temporarily held in the respective sample and hold circuit;
(e) for each respective MOS storage cell, terminating the application of the first series of programming voltage pulses of step (c) to the respective MOS storage cell when the signal read from the respective storage cell in step (d) reaches a first predetermined relationship to the signal held in the respective sample and hold circuit;
(f) providing a second series of programming voltage pulses of increasing amplitude to the drain of each of the MOS storage cells;
(g) after each programming voltage pulse of step (f), reading the MOS storage cells in the source follower read configuration and comparing each signal read therefrom with the signal temporarily held in the respective sample and hold circuit; and, (h) for each respective MOS storage cell, terminating the application of the second series of programming voltage pulses of step (f) to the respective MOS storage cell when the signal read from the respective storage cell in step (g) reaches a second predetermined relationship to the signal held in the respective sample and hold circuit.
(a) providing a plurality of storage cells, each having a floating gate MOS storage device with a source, a drain and a control gate and connectable in a source follower read configuration;
(b) taking a plurality of samples of an analog signal and temporarily holding the same in an equal plurality of sample and hold circuits;
(c) providing a first series of programming voltage pulses of increasing amplitude to the drain of each of the MOS storage cells;
(d) after each programming voltage pulse of step (c), reading the MOS storage cells in the source follower read configuration and comparing each signal read therefrom with the signal temporarily held in the respective sample and hold circuit;
(e) for each respective MOS storage cell, terminating the application of the first series of programming voltage pulses of step (c) to the respective MOS storage cell when the signal read from the respective storage cell in step (d) reaches a first predetermined relationship to the signal held in the respective sample and hold circuit;
(f) providing a second series of programming voltage pulses of increasing amplitude to the drain of each of the MOS storage cells;
(g) after each programming voltage pulse of step (f), reading the MOS storage cells in the source follower read configuration and comparing each signal read therefrom with the signal temporarily held in the respective sample and hold circuit; and, (h) for each respective MOS storage cell, terminating the application of the second series of programming voltage pulses of step (f) to the respective MOS storage cell when the signal read from the respective storage cell in step (g) reaches a second predetermined relationship to the signal held in the respective sample and hold circuit.
24. The method of claim 23 wherein the reading of the MOS storage cell of step (d) is carried out in the same way as subsequent playback of the signal sample written to the MOS storage cell.
25. Apparatus for writing a signal sample to a non-volatile floating gate type integrated circuit storage cell in an integrated circuit analog recording and playback system comprising:
first means for providing a first series of programming voltage pulses of increasing amplitude to the storage cell;
second means for reading the storage cell after each programming voltage pulse and comparing the signal read therefrom with the signal sample desired to be written thereto;
third means for terminating the application of the first series of programming voltage pulses to the storage cell by the first means when the signal read from the storage cell by the second means reaches a first predetermined relationship to the signal sample to be recorded;
fourth means for providing a second series of programming voltage pulses of increasing amplitude to the storage cell, the second series of programming voltage pulses increasing in smaller increments than the first series of programming voltage pulses of the first means;
the second means also being a means for reading the storage cell and comparing the signal read therefrom with the signal sample desired to be written thereto after each programming voltage pulse of the second series; and, fifth means for terminating the application of the second series of programming voltage pulses to the storage cell when the signal read from the storage cell reaches a second predetermined relationship to the signal sample to be recorded.
first means for providing a first series of programming voltage pulses of increasing amplitude to the storage cell;
second means for reading the storage cell after each programming voltage pulse and comparing the signal read therefrom with the signal sample desired to be written thereto;
third means for terminating the application of the first series of programming voltage pulses to the storage cell by the first means when the signal read from the storage cell by the second means reaches a first predetermined relationship to the signal sample to be recorded;
fourth means for providing a second series of programming voltage pulses of increasing amplitude to the storage cell, the second series of programming voltage pulses increasing in smaller increments than the first series of programming voltage pulses of the first means;
the second means also being a means for reading the storage cell and comparing the signal read therefrom with the signal sample desired to be written thereto after each programming voltage pulse of the second series; and, fifth means for terminating the application of the second series of programming voltage pulses to the storage cell when the signal read from the storage cell reaches a second predetermined relationship to the signal sample to be recorded.
26. The apparatus of claim 25 wherein the fourth means for providing the second series of programming pulses is a means referenced to the magnitude of the first series of programming pulses when the application of the first series of programming pulses to the storage cell was terminated.
27. The apparatus of claim 26 wherein each pulse in the second series of pulses are of shorter duration than the pulses in the first series of pulses.
28. The apparatus of claim 27 wherein the maximum time of the second series of pulses is substantially equal to the maximum time of the first series of pulses.
29. Apparatus for storing signal samples for integrated circuit analog recording and subsequent playback comprising:
a plurality of storage cells, each having a floating gate MOS storage device having a source, a drain and a control gate and connectable in a source follower read configuration;
a plurality of sample and hold circuits for taking an equal plurality of samples of an analog signal and temporarily holding the same;
first means for providing a first series of programming voltage pulses of increasing amplitude to the drain of each of the MOS storage cells;
second means for reading the MOS storage cells in the source follower configuration after each programming voltage pulse and comparing each signal read therefrom with the signal temporarily held in the respective sample and hold circuit;
third means for terminating the application of the first series of programming voltage pulses to the respective MOS storage cell for each respective MOS
storage cell when the signal read from the respective storage cell by the second means reaches a first predetermined relationship to the signal held in the respective sample and hold circuit;
fourth means for providing a second series of programming voltage pulses of increasing amplitude to the drain of each of the MOS storage cells;
the second means also being a means for reading the MOS storage cells after each programming voltage pulse of the second series and comparing each signal read therefrom with the signal temporarily held in the respective sample and hold circuit; and, fifth means for terminating the application of the second series of programming voltage pulses to the respective MOS storage cell when the signal read from the respective storage cell by the second means reaches a second predetermined relationship to the signal held in the respective sample and hold circuit.
a plurality of storage cells, each having a floating gate MOS storage device having a source, a drain and a control gate and connectable in a source follower read configuration;
a plurality of sample and hold circuits for taking an equal plurality of samples of an analog signal and temporarily holding the same;
first means for providing a first series of programming voltage pulses of increasing amplitude to the drain of each of the MOS storage cells;
second means for reading the MOS storage cells in the source follower configuration after each programming voltage pulse and comparing each signal read therefrom with the signal temporarily held in the respective sample and hold circuit;
third means for terminating the application of the first series of programming voltage pulses to the respective MOS storage cell for each respective MOS
storage cell when the signal read from the respective storage cell by the second means reaches a first predetermined relationship to the signal held in the respective sample and hold circuit;
fourth means for providing a second series of programming voltage pulses of increasing amplitude to the drain of each of the MOS storage cells;
the second means also being a means for reading the MOS storage cells after each programming voltage pulse of the second series and comparing each signal read therefrom with the signal temporarily held in the respective sample and hold circuit; and, fifth means for terminating the application of the second series of programming voltage pulses to the respective MOS storage cell when the signal read from the respective storage cell by the second means reaches a second predetermined relationship to the signal held in the respective sample and hold circuit.
30. The apparatus of claim 29 wherein the plurality of MOS storage cells comprise a two dimensional array of MOS
storage cells.
storage cells.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/636,879 US5220531A (en) | 1991-01-02 | 1991-01-02 | Source follower storage cell and improved method and apparatus for iterative write for integrated circuit analog signal recording and playback |
| US636,879 | 1991-01-02 | ||
| PCT/US1991/009666 WO1992012519A1 (en) | 1991-01-02 | 1991-12-26 | Source follower storage cell and improved method and apparatus for iterative write for integrated circuit analog signal recording and playback |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2099500A1 CA2099500A1 (en) | 1992-07-03 |
| CA2099500C true CA2099500C (en) | 2001-07-24 |
Family
ID=24553723
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002099500A Expired - Fee Related CA2099500C (en) | 1991-01-02 | 1991-12-26 | Source follower storage cell and improved method and apparatus for iterative write for integrated circuit analog signal recording and playback |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5220531A (en) |
| EP (1) | EP0565622B1 (en) |
| JP (1) | JP3111386B2 (en) |
| KR (1) | KR0155575B1 (en) |
| CA (1) | CA2099500C (en) |
| DE (1) | DE69131205T2 (en) |
| SG (1) | SG46535A1 (en) |
| WO (1) | WO1992012519A1 (en) |
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-
1991
- 1991-01-02 US US07/636,879 patent/US5220531A/en not_active Expired - Lifetime
- 1991-12-26 EP EP92903878A patent/EP0565622B1/en not_active Expired - Lifetime
- 1991-12-26 SG SG1996005707A patent/SG46535A1/en unknown
- 1991-12-26 DE DE69131205T patent/DE69131205T2/en not_active Expired - Lifetime
- 1991-12-26 CA CA002099500A patent/CA2099500C/en not_active Expired - Fee Related
- 1991-12-26 JP JP04504383A patent/JP3111386B2/en not_active Expired - Fee Related
- 1991-12-26 KR KR1019930702003A patent/KR0155575B1/en not_active IP Right Cessation
- 1991-12-26 WO PCT/US1991/009666 patent/WO1992012519A1/en active IP Right Grant
Also Published As
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|---|---|
| EP0565622A1 (en) | 1993-10-20 |
| DE69131205D1 (en) | 1999-06-10 |
| WO1992012519A1 (en) | 1992-07-23 |
| JP3111386B2 (en) | 2000-11-20 |
| DE69131205T2 (en) | 1999-09-30 |
| KR930703686A (en) | 1993-11-30 |
| CA2099500A1 (en) | 1992-07-03 |
| KR0155575B1 (en) | 1998-12-01 |
| EP0565622B1 (en) | 1999-05-06 |
| JPH06504156A (en) | 1994-05-12 |
| US5220531A (en) | 1993-06-15 |
| SG46535A1 (en) | 1998-02-20 |
| EP0565622A4 (en) | 1994-03-23 |
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