CA2114563A1 - Integrated Semiconductor Devices and Method for Manufacture Thereof - Google Patents

Integrated Semiconductor Devices and Method for Manufacture Thereof

Info

Publication number
CA2114563A1
CA2114563A1 CA2114563A CA2114563A CA2114563A1 CA 2114563 A1 CA2114563 A1 CA 2114563A1 CA 2114563 A CA2114563 A CA 2114563A CA 2114563 A CA2114563 A CA 2114563A CA 2114563 A1 CA2114563 A1 CA 2114563A1
Authority
CA
Canada
Prior art keywords
conductors
substrate
semiconductor device
photoresist
etch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2114563A
Other languages
French (fr)
Other versions
CA2114563C (en
Inventor
Keith Wayne Goossen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of CA2114563A1 publication Critical patent/CA2114563A1/en
Application granted granted Critical
Publication of CA2114563C publication Critical patent/CA2114563C/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/933—Germanium or silicon or Ge-Si on III-V
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Abstract

An integrated semiconductor device is formed by bonding the conductors of one fabricated semiconductor device having a substrate to the conductors on another fabricated semiconductor device having a substrate, flowing an etch-resist in the form of a photoresist between the devices, allowing the etch-resist to dry, and removing the substrate from one of the semiconductor devices.
Preferably the etch-resist is retained to impart mechanical strength to the device. More specifically, a hybrid semiconductor device is formed by bonding the conductors of one or more GaAs/AlGaAs multiple quantum well modulators to conductors on an IC chip, flowing a photoresist between the modulators and the chip, allowing the photoresist to dry, and removing the substrate from the modulator.
CA002114563A 1993-06-25 1994-01-31 Integrated semiconductor devices and method for manufacture thereof Expired - Lifetime CA2114563C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US083,742 1993-06-25
US08/083,742 US5385632A (en) 1993-06-25 1993-06-25 Method for manufacturing integrated semiconductor devices

Publications (2)

Publication Number Publication Date
CA2114563A1 true CA2114563A1 (en) 1994-12-26
CA2114563C CA2114563C (en) 1998-09-22

Family

ID=22180399

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002114563A Expired - Lifetime CA2114563C (en) 1993-06-25 1994-01-31 Integrated semiconductor devices and method for manufacture thereof

Country Status (4)

Country Link
US (2) US5385632A (en)
EP (1) EP0631317A3 (en)
JP (1) JPH07142815A (en)
CA (1) CA2114563C (en)

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US5923951A (en) * 1996-07-29 1999-07-13 Lucent Technologies Inc. Method of making a flip-chip bonded GaAs-based opto-electronic device
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US5914889A (en) * 1996-09-13 1999-06-22 Lucent Technologies Inc. Method and system for generating a mask layout of an optical integrated circuit
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US6551857B2 (en) 1997-04-04 2003-04-22 Elm Technology Corporation Three dimensional structure integrated circuits
US5915167A (en) 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
ATE550461T1 (en) * 1997-04-11 2012-04-15 Nichia Corp GROWTH METHOD FOR A NITRIDE SEMICONDUCTOR
US6215244B1 (en) 1997-06-16 2001-04-10 Canon Kabushiki Kaisha Stacked organic light emitting device with specific electrode arrangement
US6466349B1 (en) * 1998-05-14 2002-10-15 Hughes Electronics Corporation Integrated optical transmitter
KR100298205B1 (en) * 1998-05-21 2001-08-07 오길록 Integrated tri-color light emitting diode and method for fabricating the same
US6423560B1 (en) * 1999-10-22 2002-07-23 Teraconnect, Incoporated Method of making an optoelectronic device using multiple etch stop layers
US7291858B2 (en) * 1999-12-24 2007-11-06 Bae Systems Information And Electronic Systems Integration Inc. QWIP with tunable spectral response
US6875975B2 (en) 1999-12-24 2005-04-05 Bae Systems Information And Electronic Systems Integration Inc Multi-color, multi-focal plane optical detector
EP2270875B1 (en) * 2000-04-26 2018-01-10 OSRAM Opto Semiconductors GmbH Sermiconductor light emitting device and method of manufacturing the same
JP2003533030A (en) * 2000-04-26 2003-11-05 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Manufacturing method of light emitting diode chip and light emitting diode structure element based on GaN
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US7547921B2 (en) * 2000-08-08 2009-06-16 Osram Opto Semiconductors Gmbh Semiconductor chip for optoelectronics
US20020017652A1 (en) * 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
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US6748994B2 (en) * 2001-04-11 2004-06-15 Avery Dennison Corporation Label applicator, method and label therefor
US6731665B2 (en) 2001-06-29 2004-05-04 Xanoptix Inc. Laser arrays for high power fiber amplifier pumps
US6753199B2 (en) 2001-06-29 2004-06-22 Xanoptix, Inc. Topside active optical device apparatus and method
US6620642B2 (en) 2001-06-29 2003-09-16 Xanoptix, Inc. Opto-electronic device integration
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US6740544B2 (en) * 2002-05-14 2004-05-25 Freescale Semiconductor, Inc. Solder compositions for attaching a die to a substrate
US7402897B2 (en) * 2002-08-08 2008-07-22 Elm Technology Corporation Vertical system integration
US20040211972A1 (en) * 2003-04-22 2004-10-28 Gelcore, Llc Flip-chip light emitting diode
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Also Published As

Publication number Publication date
EP0631317A3 (en) 1998-02-18
CA2114563C (en) 1998-09-22
US6172417B1 (en) 2001-01-09
US5385632A (en) 1995-01-31
JPH07142815A (en) 1995-06-02
EP0631317A2 (en) 1994-12-28

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Effective date: 20140131