CA2127323A1 - Process for Preparing High Crystallinity Oxide Thin Film - Google Patents
Process for Preparing High Crystallinity Oxide Thin FilmInfo
- Publication number
- CA2127323A1 CA2127323A1 CA2127323A CA2127323A CA2127323A1 CA 2127323 A1 CA2127323 A1 CA 2127323A1 CA 2127323 A CA2127323 A CA 2127323A CA 2127323 A CA2127323 A CA 2127323A CA 2127323 A1 CA2127323 A1 CA 2127323A1
- Authority
- CA
- Canada
- Prior art keywords
- substrate
- thin film
- oxide thin
- supplied
- high crystallinity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming superconductor layers
- H10N60/0381—Processes for depositing or forming superconductor layers by evaporation independent of heat source, e.g. MBE
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/32—Titanates; Germanates; Molybdates; Tungstates
Abstract
A process for preparing an oxide thin film which has a crystalline, clean and smooth surface on a substrate. The process is conducted by using an apparatus comprising a vacuum chamber in which an oxidizing gas of O2 including O3 can be supplied near the substrate so that pressure around the substrate can be increased while maintaining high vacuum near an evaporation source and Knudsen cell evaporation sources arranged in the vacuum chamber wherein the substrate is heated, molecular beam of constituent atoms of the oxide excluding oxygen are supplied from the K
cell evaporation sources and an oxidizing gas is locally supplied to the vicinity of the substrate.
cell evaporation sources and an oxidizing gas is locally supplied to the vicinity of the substrate.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP190854/1993 | 1993-07-02 | ||
JP19085493A JP3413888B2 (en) | 1993-07-02 | 1993-07-02 | Method of forming oxide thin film |
JP200016/1993 | 1993-07-19 | ||
JP5200016A JPH0738164A (en) | 1993-07-19 | 1993-07-19 | Method of stacking upper layer thin film over oxide superconducting thin film |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2127323A1 true CA2127323A1 (en) | 1995-01-03 |
CA2127323C CA2127323C (en) | 1998-08-18 |
Family
ID=26506345
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002127323A Expired - Fee Related CA2127323C (en) | 1993-07-02 | 1994-07-04 | Process for preparing high crystallinity oxide thin film |
Country Status (4)
Country | Link |
---|---|
US (1) | US5501175A (en) |
EP (1) | EP0633331B1 (en) |
CA (1) | CA2127323C (en) |
DE (1) | DE69422666T2 (en) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2152718A1 (en) * | 1994-07-04 | 1996-01-05 | Takao Nakamura | Process for preparing high crystallinity oxide thin film |
JPH0867968A (en) * | 1994-08-26 | 1996-03-12 | Sumitomo Electric Ind Ltd | Production of oxide thin film |
GB2323209A (en) * | 1997-03-13 | 1998-09-16 | Sharp Kk | Molecular beam epitaxy apparatus and method |
EP1038996B1 (en) * | 1998-09-11 | 2007-09-05 | Japan Science and Technology Agency | Combinatorial molecular layer epitaxy device |
US6541079B1 (en) * | 1999-10-25 | 2003-04-01 | International Business Machines Corporation | Engineered high dielectric constant oxide and oxynitride heterostructure gate dielectrics by an atomic beam deposition technique |
DE60135100D1 (en) | 2000-03-24 | 2008-09-11 | Cymbet Corp | E WITH ULTRA-THIN ELECTROLYTES |
US7309269B2 (en) * | 2002-04-15 | 2007-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating light-emitting device and apparatus for manufacturing light-emitting device |
US7294209B2 (en) * | 2003-01-02 | 2007-11-13 | Cymbet Corporation | Apparatus and method for depositing material onto a substrate using a roll-to-roll mask |
US7603144B2 (en) * | 2003-01-02 | 2009-10-13 | Cymbet Corporation | Active wireless tagging system on peel and stick substrate |
US20040131760A1 (en) * | 2003-01-02 | 2004-07-08 | Stuart Shakespeare | Apparatus and method for depositing material onto multiple independently moving substrates in a chamber |
US6906436B2 (en) * | 2003-01-02 | 2005-06-14 | Cymbet Corporation | Solid state activity-activated battery device and method |
US7211351B2 (en) | 2003-10-16 | 2007-05-01 | Cymbet Corporation | Lithium/air batteries with LiPON as separator and protective barrier and method |
WO2005067645A2 (en) * | 2004-01-06 | 2005-07-28 | Cymbet Corporation | Layered barrier structure having one or more definable layers and method |
US7776478B2 (en) * | 2005-07-15 | 2010-08-17 | Cymbet Corporation | Thin-film batteries with polymer and LiPON electrolyte layers and method |
US20070012244A1 (en) * | 2005-07-15 | 2007-01-18 | Cymbet Corporation | Apparatus and method for making thin-film batteries with soft and hard electrolyte layers |
KR101387855B1 (en) * | 2005-07-15 | 2014-04-22 | 사임베트 코퍼레이션 | Thin-film batteries with soft and hard electrolyte layers and method |
US20080232761A1 (en) * | 2006-09-20 | 2008-09-25 | Raveen Kumaran | Methods of making optical waveguide structures by way of molecular beam epitaxy |
US9853325B2 (en) | 2011-06-29 | 2017-12-26 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
US11527774B2 (en) | 2011-06-29 | 2022-12-13 | Space Charge, LLC | Electrochemical energy storage devices |
US10658705B2 (en) | 2018-03-07 | 2020-05-19 | Space Charge, LLC | Thin-film solid-state energy storage devices |
US10601074B2 (en) | 2011-06-29 | 2020-03-24 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
US20140272345A1 (en) * | 2013-03-15 | 2014-09-18 | Rubicon Technology, Inc. | Method of growing aluminum oxide onto substrates by use of an aluminum source in an environment containing partial pressure of oxygen to create transparent, scratch-resistant windows |
CN113454262A (en) * | 2020-01-28 | 2021-09-28 | 株式会社爱发科 | Deposition source and deposition apparatus |
CN114457407A (en) * | 2020-04-21 | 2022-05-10 | 中国工程物理研究院材料研究所 | Preparation method of hexagonal phase cerium trioxide single crystal film |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1332324C (en) * | 1987-03-30 | 1994-10-11 | Jun Shioya | Method for producing thin film of oxide superconductor |
JPH075435B2 (en) * | 1987-03-31 | 1995-01-25 | 住友電気工業株式会社 | Method and device for manufacturing superconducting thin film |
US4981714A (en) * | 1987-12-14 | 1991-01-01 | Sharp Kabushiki Kaisha | Method of producing ferroelectric LiNb1-31 x Tax O3 0<x<1) thin film by activated evaporation |
US5361720A (en) * | 1988-04-22 | 1994-11-08 | British Technology Group Ltd. | Epitaxial deposition |
WO1990002215A1 (en) * | 1988-08-19 | 1990-03-08 | Regents Of The University Of Minnesota | Preparation of superconductive ceramic oxides using ozone |
US5236895A (en) * | 1988-11-24 | 1993-08-17 | Kawasaki Jukogyo Kabushiki Kaisha | Production of oxide superconducting films by laser sputtering using N22 |
JPH0354116A (en) * | 1989-07-24 | 1991-03-08 | Sumitomo Electric Ind Ltd | Compound oxide superconducting thin film and production thereof |
US5260267A (en) * | 1989-07-24 | 1993-11-09 | Sumitomo Electric Industries, Ltd. | Method for forming a Bi-containing superconducting oxide film on a substrate with a buffer layer of Bi2 O3 |
CA2029038C (en) * | 1989-10-31 | 1993-12-14 | Keizo Harada | Process and system for preparing a superconducting thin film of oxide |
JPH03150218A (en) * | 1989-11-07 | 1991-06-26 | Sumitomo Electric Ind Ltd | Production of superconductive thin film |
US5264413A (en) * | 1990-03-07 | 1993-11-23 | Ivan Bozovic | Bi-Sr-Ca-Cu-O compounds and methods |
DE69132972T2 (en) * | 1991-01-07 | 2003-03-13 | Ibm | Superconducting field effect transistor with inverse MISFET structure and method for its production |
JPH04357198A (en) * | 1991-02-20 | 1992-12-10 | Sanyo Electric Co Ltd | Production of superconducting oxide thin film |
FR2675951B1 (en) * | 1991-04-23 | 1997-08-29 | Thomson Csf | JOSEPHSON JUNCTION STRUCTURE. |
-
1994
- 1994-07-01 US US08/269,777 patent/US5501175A/en not_active Expired - Fee Related
- 1994-07-01 DE DE69422666T patent/DE69422666T2/en not_active Expired - Fee Related
- 1994-07-01 EP EP94401516A patent/EP0633331B1/en not_active Expired - Lifetime
- 1994-07-04 CA CA002127323A patent/CA2127323C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69422666D1 (en) | 2000-02-24 |
US5501175A (en) | 1996-03-26 |
DE69422666T2 (en) | 2000-07-27 |
CA2127323C (en) | 1998-08-18 |
EP0633331B1 (en) | 2000-01-19 |
EP0633331A1 (en) | 1995-01-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request | ||
MKLA | Lapsed |