CA2134426A1 - Method of Feeding Gas Into a Chamber - Google Patents

Method of Feeding Gas Into a Chamber

Info

Publication number
CA2134426A1
CA2134426A1 CA2134426A CA2134426A CA2134426A1 CA 2134426 A1 CA2134426 A1 CA 2134426A1 CA 2134426 A CA2134426 A CA 2134426A CA 2134426 A CA2134426 A CA 2134426A CA 2134426 A1 CA2134426 A1 CA 2134426A1
Authority
CA
Canada
Prior art keywords
chamber
valves
reactive gas
line
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2134426A
Other languages
French (fr)
Other versions
CA2134426C (en
Inventor
Yukio Minami
Nobukazu Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2134426A1 publication Critical patent/CA2134426A1/en
Application granted granted Critical
Publication of CA2134426C publication Critical patent/CA2134426C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J4/00—Feed or outlet devices; Feed or outlet control devices
    • B01J4/008—Feed or outlet control devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y10T137/0396—Involving pressure control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/85978—With pump
    • Y10T137/86083—Vacuum pump
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87249—Multiple inlet with multiple outlet
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87265—Dividing into parallel flow paths with recombining
    • Y10T137/87499—Fluid actuated or retarded

Abstract

The present invention provides a method for alternately feeding reactive gas and inert gas into a chamber, and is preferably used in a semiconductor manufacturing plant to form films on wafers. The inert and reactive gas feed lines have shunt valves connected as branches to the primary sides of the line changeover valves, with a vent line being connected to the outlet sides of the shunt valves. The opening and closing operation of the line changeover valves and the shunt valves alternately feeds reactive gas and inert gas into the chamber, the lines being changed over after a specified time interval. The simultaneous evacuation and exhaustion of the vent line by a vacuum pump suppresses pressure fluctuations in the chamber during changeover of the gas feed lines.
CA002134426A 1993-10-27 1994-10-26 Method of feeding gas into a chamber Expired - Fee Related CA2134426C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5-268689 1993-10-27
JP26868993A JP3332053B2 (en) 1993-10-27 1993-10-27 Gas supply method to chamber

Publications (2)

Publication Number Publication Date
CA2134426A1 true CA2134426A1 (en) 1995-04-28
CA2134426C CA2134426C (en) 1998-03-31

Family

ID=17462022

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002134426A Expired - Fee Related CA2134426C (en) 1993-10-27 1994-10-26 Method of feeding gas into a chamber

Country Status (8)

Country Link
US (1) US5488967A (en)
EP (1) EP0651432B1 (en)
JP (1) JP3332053B2 (en)
KR (1) KR0138609B1 (en)
CA (1) CA2134426C (en)
DE (1) DE69417682T2 (en)
SG (1) SG45144A1 (en)
TW (1) TW267235B (en)

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US5865205A (en) * 1997-04-17 1999-02-02 Applied Materials, Inc. Dynamic gas flow controller
KR100483434B1 (en) * 1998-03-04 2005-08-31 삼성전자주식회사 Semiconductor device manufacturing equipment
US6228773B1 (en) 1998-04-14 2001-05-08 Matrix Integrated Systems, Inc. Synchronous multiplexed near zero overhead architecture for vacuum processes
US6050132A (en) * 1998-06-15 2000-04-18 Capria; Michael Method and apparatus for hyperbaric chamber gas discharge and pressure management
US6082414A (en) * 1998-12-03 2000-07-04 Taiwan Semiconductor Manufacturing Company, Ltd Apparatus and method for replacing an attachment on a vacuum chamber
JP2000271471A (en) 1999-03-24 2000-10-03 Nippon M K S Kk Liquid source supplying system and its washing method and vaporizer
JP3579763B2 (en) 1999-07-01 2004-10-20 日本酸素株式会社 Gas supply apparatus and method
FR2797997B1 (en) * 1999-08-26 2002-04-05 Cit Alcatel METHOD AND DEVICE FOR PROCESSING SUBSTRATE IN VACUUM BY PLASMA
TW490756B (en) 1999-08-31 2002-06-11 Hitachi Ltd Method for mass production of semiconductor integrated circuit device and manufacturing method of electronic components
US6223770B1 (en) * 1999-09-29 2001-05-01 Lsi Logic Corporation Vacuum valve interface
US6129108A (en) * 1999-12-03 2000-10-10 United Semiconductor Corp Fluid delivering system
US6461436B1 (en) 2001-10-15 2002-10-08 Micron Technology, Inc. Apparatus and process of improving atomic layer deposition chamber performance
CN1306062C (en) * 2001-10-15 2007-03-21 微米技术公司 Atomic layer deposition apparatus and process
KR100760291B1 (en) * 2001-11-08 2007-09-19 에이에스엠지니텍코리아 주식회사 Method for forming thin film
KR100863782B1 (en) * 2002-03-08 2008-10-16 도쿄엘렉트론가부시키가이샤 Substrate processing apparatus and substrate processing method
US20040089227A1 (en) * 2002-07-19 2004-05-13 Albert Wang Dual chamber vacuum processing system
CN100458629C (en) * 2002-11-08 2009-02-04 东京毅力科创株式会社 Fluid processing device and fluid processing method
GB0322602D0 (en) * 2003-09-26 2003-10-29 Boc Group Inc Vent-run gas switching systems
US20050145181A1 (en) * 2003-12-31 2005-07-07 Dickinson Colin J. Method and apparatus for high speed atomic layer deposition
JP4553265B2 (en) * 2007-03-23 2010-09-29 東京エレクトロン株式会社 Heat treatment apparatus and heat treatment method
US20090035946A1 (en) * 2007-07-31 2009-02-05 Asm International N.V. In situ deposition of different metal-containing films using cyclopentadienyl metal precursors
EP2252347B1 (en) 2008-01-23 2016-07-20 DEKA Products Limited Partnership Fluid volume determination for medical treatment system
US11833281B2 (en) 2008-01-23 2023-12-05 Deka Products Limited Partnership Pump cassette and methods for use in medical treatment system using a plurality of fluid lines
US20090242046A1 (en) * 2008-03-31 2009-10-01 Benjamin Riordon Valve module
US8383525B2 (en) * 2008-04-25 2013-02-26 Asm America, Inc. Plasma-enhanced deposition process for forming a metal oxide thin film and related structures
SG10201505334YA (en) 2010-07-07 2015-08-28 Deka Products Lp Medical Treatment System And Methods Using A Plurality Of Fluid Lines
KR101940325B1 (en) * 2011-10-05 2019-01-18 가부시키가이샤 호리바 에스텍 Fluid mechanism, support member constituting fluid mechanism and fluid control system
CN103090187B (en) * 2011-10-27 2014-12-10 河南省电力勘测设计院 Safe, efficient and unattended high-pressure power plant hydrogen supply system and implementation method thereof
JP6267491B2 (en) * 2013-11-08 2018-01-24 株式会社堀場エステック Fluid switching device
MX2016016004A (en) 2014-06-05 2017-07-11 Deka Products Lp System for calculating a change in fluid volume in a pumping chamber.
CN108060410B (en) * 2017-12-15 2023-08-18 浙江晶盛机电股份有限公司 Air inlet pipeline protection structure for flat-plate PECVD
MX2020010294A (en) 2018-03-30 2020-10-28 Deka Products Lp Liquid pumping cassettes and associated pressure distribution manifold and related methods.
CN108458250B (en) * 2018-04-16 2024-01-30 谢东波 Linkage pipe and system capable of adjusting fluid flow
CN110764543B (en) * 2018-07-26 2023-06-30 中国石油天然气股份有限公司 Device and method for maintaining vacuum degree of instrument analyzer
JP2020139864A (en) * 2019-02-28 2020-09-03 株式会社堀場エステック Flow rate calculation system, program for flow rate calculation system, flow rate calculation method, and flow rate calculation device
JP7296854B2 (en) * 2019-11-07 2023-06-23 東京エレクトロン株式会社 Gas supply method and substrate processing apparatus
CN110925598B (en) * 2019-12-11 2020-10-09 广州广钢气体能源股份有限公司 Switching system and switching method for electronic gas valve

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US4739787A (en) * 1986-11-10 1988-04-26 Stoltenberg Kevin J Method and apparatus for improving the yield of integrated circuit devices
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US5277215A (en) * 1992-01-28 1994-01-11 Kokusai Electric Co., Ltd. Method for supplying and discharging gas to and from semiconductor manufacturing equipment and system for executing the same
US5368062A (en) * 1992-01-29 1994-11-29 Kabushiki Kaisha Toshiba Gas supplying system and gas supplying apparatus

Also Published As

Publication number Publication date
EP0651432A1 (en) 1995-05-03
DE69417682T2 (en) 2000-01-05
JPH07122498A (en) 1995-05-12
EP0651432B1 (en) 1999-04-07
DE69417682D1 (en) 1999-05-12
KR0138609B1 (en) 1998-06-15
US5488967A (en) 1996-02-06
TW267235B (en) 1996-01-01
JP3332053B2 (en) 2002-10-07
SG45144A1 (en) 1998-01-16
KR950012566A (en) 1995-05-16
CA2134426C (en) 1998-03-31

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