CA2134426C - Method of feeding gas into a chamber - Google Patents
Method of feeding gas into a chamberInfo
- Publication number
- CA2134426C CA2134426C CA002134426A CA2134426A CA2134426C CA 2134426 C CA2134426 C CA 2134426C CA 002134426 A CA002134426 A CA 002134426A CA 2134426 A CA2134426 A CA 2134426A CA 2134426 C CA2134426 C CA 2134426C
- Authority
- CA
- Canada
- Prior art keywords
- chamber
- line
- pressure
- valve
- valves
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J4/00—Feed or outlet devices; Feed or outlet control devices
- B01J4/008—Feed or outlet control devices
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/0318—Processes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/0318—Processes
- Y10T137/0396—Involving pressure control
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/85978—With pump
- Y10T137/86083—Vacuum pump
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/87249—Multiple inlet with multiple outlet
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/87265—Dividing into parallel flow paths with recombining
- Y10T137/87499—Fluid actuated or retarded
Abstract
The present invention provides a method for alternately feeding reactive gas and inert gas into a chamber, and is preferably used in a semiconductor manufacturing plant to form films on wafers. The inert and reactive gas feed lines have shunt valves connected as branches to the primary sides of the line changeover valves, with a vent line being connected to the outlet sides of the shunt valves. The opening and closing operation of the line changeover valves and the shunt valves alternately feeds reactive gas and inert gas into the chamber, the lines being changed over after a specified time interval. The simultaneous evacuation and exhaustion of the vent line by a vacuum pump suppresses pressure fluctuations in the chamber during changeover of the gas feed lines.
Description
2134~26 A METHOD OF FEEDING GAS INTO A CHAMBER
Field of the Invention The present invention relates to improvements in methods for feeding gas into a process chamber so as to suppress pressure fluctuations in the chamber during changeover of gas feed lines.
Brief Description of the Drawings In drawings which illustrate embodiments of the present invention:
Fig. 1 is a schematic block diagram of a gas piping system for executing the gas feed method of the present invention;
Figs. 2(A) to 2(D) are graphs showing the results of pressure fluctuation tests using the gas piping system of Fig. 1;
Fig. 3 is a graph showing pressure differences observed in the chamber of the gas piping system of Fig. 1 during changeover of the gas feed lines while regulating pressure in the vent line.
In drawings which illustrate the prior art:
Fig. 4 is a schematic block diagram of a prior art gas piping system;
Figs. 5(A) and 5(B) are graphs showing the results of pressure fluctuation tests using the prior art gas piping system of Fig. 4;
Figs. 6(A) and 6(B) are graphs showing the results of pressure fluctuation tests using the prior art gas piping system of Fig. 4;
Figs. 7(A) and 7(B) are graphs showing pressure differences observed in the chamber during changeover of the gas feed lines in the prior art gas piping system of Fig. 4;
and Figs. 8(A) and 8(B) are graphs showing the results of pressure fluctuation tests using the prior art gas piping system of Fig. 4, wherein the chamber pressure regulators are changed.
Background of the Invention Referring to Figs. 4 to 8, a prior art gas piping system is described in detail below.
Fig. 4 is a schematic block diagram showing a prior art gas piping system as used in a semiconductor manufacturing plant in a process for forming a film on a wafer. This piping system comprises a chamber 20, a reactive gas feed line 22 having a chamber pressure regulator 21 and a line changeover valve V1', an inert gas feed line 24 having a chamber pressure regulator 23 and a line changeover valve V2', a vacuum exhaust line 25 connected to the chamber 2, and a vacuum pump 26 connected to the vacuum exhaust line 2S.
In Fig. 4, V3' and V4' are shunt valves for a vent pipe (not shown) connected to the primary sids of the line changeover valves Vl' and V2', 27 is a vacuum gauge connected to the chamber 20, and V is a switch valve placed 213~426 in the vacuum exhaust line 25.
In a process for forming a film on a wafer, reactive gas from the reactive gas feed line 22 and inert gas from the inert gas feed line 24 are alternately supplied into chamber 20, which has been evacuated and exhausted by vacuum pump 26.
The flow rate of reactive gas and inert gas supplied into the chamber 20 is controlled by the chamber pressure regulators 21 and 23 in respective lines 22 and 24, which ensure that the pressure in the chamber 20 is a pressure suited to the film forming process.
Due to the recent trend towards high integration of semiconductors, film thicknesses of wafers have been reduced, making control of film thickness more difficult.
Pressure fluctuations in the chamber during changeover of the gas feed lines can disturb the film being formed and vary the film thickness. Therefore, it is important to maintain a constant pressure in the chamber.
In the prior art gas piping system of Fig. 4, the flow rate of gas is controlled by the chamber pressure regulators 21 and 23 to maintain the pressure in chamber 2~
at a set pressure. However, when the gas feed lines 22 and 24 are changed over, pressure fluctuations inevitably occur in chamber 20. As a result, the film thickness of the wafer varies, or plasma fails to form in chamber 20. Further, a considerably long time is required to stabilize the pressure in chamber 20, resulting in a loss of time.
Where a vent line is provided, the line changeover valve V1', and shunt valve V4' are opened and closed simultaneously, and line changeover valve V2' and 8hunt valve V3' are opened and closed simultaneously. While Vl', and V4' are open, V2' and V3' are closed; and while V2' and V3' are open, V1' and V4' are closed.
The gas feed pattern is as follows:
(1) when the gas in reactive gas feed line 22 is supplied into the chamber 20 through open line changeover valve Vl', the gas in the inert gas feed line 24 is discharged through open shunt valve V4' to the vent line;
and (2) when the gas in the inert gas feed line 24 is supplied into the chamber 20 through open line changeover valve V2', the gas in the reactive gas feed line 22 is discharged through open shunt valve V3' to the vent line.
Where no vent line is provided, only the line changeover valves V1' and V2' are opened and closed alternately, with the shunt valves V3' and V4' normally being closed. In this case, the gas feed pattern is as follows:
(1) when the gas in the reactive gas feed line 22 is supplied into the chamber 20 through open line changeover valve V1', the gas in the inert gas feed line 24 is sealed in the line 24 by closed line changeover valve V2'; and (2) when the gas in the inert gas feed line 24 is supplied into the chamber 20 through open line changeover valve V2', the gas in the reactive ga5 feed line 22 i8 sealed in the line 22 by closed line changeover valve V1'.
213~26 Figs. 5 to 8 are graphs showing the results of pressure fluctuation tests in chamber 20 during line changeover. The pressure fluctuation tests were conducted by varying the parameters listed in Table 1 to determine their effects on pressure fluctuations in chamber 20 during line changeover.
(Table 1) Parameters Setting Vacuum pressure 760, 500, 100, 50, 10, in chamber 5, 1, 0.2 (Torr) Vent line Yes or no Chamber pressure Mass flow Direct touch type regulator 21 controller metal diaphragm valve Chamber pressure Mass flow Direct touch type regulator 23 controller metal diaphragm valve Line changeover 60, 30, 10, 5 (sec.) interval In the pressure fluctuation tests, direct touch type metal diaphragm valves were used as line changeover valves V1' and V2' and shunt valves V3' and V4'. The valves V1', V2', V3' and V4' were air driven valves, which were opened and closed by controlling the supply of valve drive air through a solenoid valve (not shown).
The pressure fluctuation tests were conducted by the following procedure. First, the line changeover valves V1' and V2' were closed and the chamber 20 (having dimensions of 210 mm by 210 mm by 210 mm) was evacuated and exhausted by the vacuum pump 26. Then, from the reactive gas feed line 22, gas (N2: primary pressure of 1.0 kgf/cm2G) was supplied into chamber 20, and the flow rate of the chamber pressure regulator 21 was adjusted to establish a set pressure in chamber 20, until the vacuum pressure in chamber 20 was stabilized.
When the pressure in chamber 20 was stabilized, the gas feed into chamber 20 was changed from the reactive gas feed line 22 to the inert gas feed line 24, and the flow rate of the chamber pressure regulator 23 was adjusted to establish a set pressure in chamber 20 until the vacuum pressure in chamber 20 was stabilized.
The vacuum pressure in chamber 20 was set at the same value (+ 0.5%) when the gas was supplied through the reactive gas feed line 22 as when the gas was supplied through the inert gas feed line 24.
When these preparatory steps were finished, the gas was supplied into chamber 20 through the reactive gas 213~426 feed line 22 until the pressure in chamber 20 was stabilized. When the pressure in the chamber 20 was stabilized, gas feed lines 22 and 24 were changed over in an alternating fashion after every specified time period, and the pressure fluctuations in chamber 20 during changeover were measured by diaphragm type vacuum gauge 27.
Figs. 5(A) and 5(B) are graphic expressions of pressure fluctuations when changing over the lines 22 and 24. In Figs. 5(A) and 5(B), the set pressure in chamber 20 is 5 Torr, the time interval of line changeover is 20 to 10 to 5 seconds, and mass flow controllers are used as the chamber pressure regulators 21 and 23.
In Figs. 6(A) and 6(B), the set pressure in chamber 20 is 0.2 Torr, the time interval of line changeover is 30 to 10 to 5 seconds, and mass flow controllers are used as the pressure regulators 21 and 23.
Vent lines are provided in Figs. 5(A) and 6(A), and are not provided in Figs. 5(B) and 6(B).
Figs. 7(A) and 7(B) are graphic expressions of the pressure difference in chamber 20 observed when changing over the lines, relative to the set pressure in chamber 20. Figs. 7(A) and 7(B) show the values obtained when the time interval of line changeover is 60, 30, 10, and 5 seconds, and mass flow controllers are used as the chamber pressure regulators, 21 and 23. A vent line is provided in Fig. 7(A) and is not provided in Fig. 7(B).
Figs. 8(A) and 8(B) are graphic expressions of pressure fluctuations in chamber 20 ob5erved when a vent , 2139426 line is provided, and the time interval of line changeover is 30, 10 to 5 seconds. In Figs. 8(A), mass flow controllers are used as the chamber pressure regulators 21 and 23, whereas in Fig 8(B), direct diaphragm type flow regulating valves are used as the chamber pressure regulators 21 and 23.
The test results in Figs. 5 to 8 clearly show:
(1) when the pressure in chamber 20 is vacuum, pressure fluctuations occur in chamber 20 during changeover of lines 22 and 24 (see Figs. 5 and 6);
(2) the pressure difference varies depending on whether the line is changed from the reactive gas feed line 22 to the inert gas feed line 24, or whether it is changed from the inert gas feed line 24 to the reactive gas feed line 22, (see Figs. 5 and 6);
Field of the Invention The present invention relates to improvements in methods for feeding gas into a process chamber so as to suppress pressure fluctuations in the chamber during changeover of gas feed lines.
Brief Description of the Drawings In drawings which illustrate embodiments of the present invention:
Fig. 1 is a schematic block diagram of a gas piping system for executing the gas feed method of the present invention;
Figs. 2(A) to 2(D) are graphs showing the results of pressure fluctuation tests using the gas piping system of Fig. 1;
Fig. 3 is a graph showing pressure differences observed in the chamber of the gas piping system of Fig. 1 during changeover of the gas feed lines while regulating pressure in the vent line.
In drawings which illustrate the prior art:
Fig. 4 is a schematic block diagram of a prior art gas piping system;
Figs. 5(A) and 5(B) are graphs showing the results of pressure fluctuation tests using the prior art gas piping system of Fig. 4;
Figs. 6(A) and 6(B) are graphs showing the results of pressure fluctuation tests using the prior art gas piping system of Fig. 4;
Figs. 7(A) and 7(B) are graphs showing pressure differences observed in the chamber during changeover of the gas feed lines in the prior art gas piping system of Fig. 4;
and Figs. 8(A) and 8(B) are graphs showing the results of pressure fluctuation tests using the prior art gas piping system of Fig. 4, wherein the chamber pressure regulators are changed.
Background of the Invention Referring to Figs. 4 to 8, a prior art gas piping system is described in detail below.
Fig. 4 is a schematic block diagram showing a prior art gas piping system as used in a semiconductor manufacturing plant in a process for forming a film on a wafer. This piping system comprises a chamber 20, a reactive gas feed line 22 having a chamber pressure regulator 21 and a line changeover valve V1', an inert gas feed line 24 having a chamber pressure regulator 23 and a line changeover valve V2', a vacuum exhaust line 25 connected to the chamber 2, and a vacuum pump 26 connected to the vacuum exhaust line 2S.
In Fig. 4, V3' and V4' are shunt valves for a vent pipe (not shown) connected to the primary sids of the line changeover valves Vl' and V2', 27 is a vacuum gauge connected to the chamber 20, and V is a switch valve placed 213~426 in the vacuum exhaust line 25.
In a process for forming a film on a wafer, reactive gas from the reactive gas feed line 22 and inert gas from the inert gas feed line 24 are alternately supplied into chamber 20, which has been evacuated and exhausted by vacuum pump 26.
The flow rate of reactive gas and inert gas supplied into the chamber 20 is controlled by the chamber pressure regulators 21 and 23 in respective lines 22 and 24, which ensure that the pressure in the chamber 20 is a pressure suited to the film forming process.
Due to the recent trend towards high integration of semiconductors, film thicknesses of wafers have been reduced, making control of film thickness more difficult.
Pressure fluctuations in the chamber during changeover of the gas feed lines can disturb the film being formed and vary the film thickness. Therefore, it is important to maintain a constant pressure in the chamber.
In the prior art gas piping system of Fig. 4, the flow rate of gas is controlled by the chamber pressure regulators 21 and 23 to maintain the pressure in chamber 2~
at a set pressure. However, when the gas feed lines 22 and 24 are changed over, pressure fluctuations inevitably occur in chamber 20. As a result, the film thickness of the wafer varies, or plasma fails to form in chamber 20. Further, a considerably long time is required to stabilize the pressure in chamber 20, resulting in a loss of time.
Where a vent line is provided, the line changeover valve V1', and shunt valve V4' are opened and closed simultaneously, and line changeover valve V2' and 8hunt valve V3' are opened and closed simultaneously. While Vl', and V4' are open, V2' and V3' are closed; and while V2' and V3' are open, V1' and V4' are closed.
The gas feed pattern is as follows:
(1) when the gas in reactive gas feed line 22 is supplied into the chamber 20 through open line changeover valve Vl', the gas in the inert gas feed line 24 is discharged through open shunt valve V4' to the vent line;
and (2) when the gas in the inert gas feed line 24 is supplied into the chamber 20 through open line changeover valve V2', the gas in the reactive gas feed line 22 is discharged through open shunt valve V3' to the vent line.
Where no vent line is provided, only the line changeover valves V1' and V2' are opened and closed alternately, with the shunt valves V3' and V4' normally being closed. In this case, the gas feed pattern is as follows:
(1) when the gas in the reactive gas feed line 22 is supplied into the chamber 20 through open line changeover valve V1', the gas in the inert gas feed line 24 is sealed in the line 24 by closed line changeover valve V2'; and (2) when the gas in the inert gas feed line 24 is supplied into the chamber 20 through open line changeover valve V2', the gas in the reactive ga5 feed line 22 i8 sealed in the line 22 by closed line changeover valve V1'.
213~26 Figs. 5 to 8 are graphs showing the results of pressure fluctuation tests in chamber 20 during line changeover. The pressure fluctuation tests were conducted by varying the parameters listed in Table 1 to determine their effects on pressure fluctuations in chamber 20 during line changeover.
(Table 1) Parameters Setting Vacuum pressure 760, 500, 100, 50, 10, in chamber 5, 1, 0.2 (Torr) Vent line Yes or no Chamber pressure Mass flow Direct touch type regulator 21 controller metal diaphragm valve Chamber pressure Mass flow Direct touch type regulator 23 controller metal diaphragm valve Line changeover 60, 30, 10, 5 (sec.) interval In the pressure fluctuation tests, direct touch type metal diaphragm valves were used as line changeover valves V1' and V2' and shunt valves V3' and V4'. The valves V1', V2', V3' and V4' were air driven valves, which were opened and closed by controlling the supply of valve drive air through a solenoid valve (not shown).
The pressure fluctuation tests were conducted by the following procedure. First, the line changeover valves V1' and V2' were closed and the chamber 20 (having dimensions of 210 mm by 210 mm by 210 mm) was evacuated and exhausted by the vacuum pump 26. Then, from the reactive gas feed line 22, gas (N2: primary pressure of 1.0 kgf/cm2G) was supplied into chamber 20, and the flow rate of the chamber pressure regulator 21 was adjusted to establish a set pressure in chamber 20, until the vacuum pressure in chamber 20 was stabilized.
When the pressure in chamber 20 was stabilized, the gas feed into chamber 20 was changed from the reactive gas feed line 22 to the inert gas feed line 24, and the flow rate of the chamber pressure regulator 23 was adjusted to establish a set pressure in chamber 20 until the vacuum pressure in chamber 20 was stabilized.
The vacuum pressure in chamber 20 was set at the same value (+ 0.5%) when the gas was supplied through the reactive gas feed line 22 as when the gas was supplied through the inert gas feed line 24.
When these preparatory steps were finished, the gas was supplied into chamber 20 through the reactive gas 213~426 feed line 22 until the pressure in chamber 20 was stabilized. When the pressure in the chamber 20 was stabilized, gas feed lines 22 and 24 were changed over in an alternating fashion after every specified time period, and the pressure fluctuations in chamber 20 during changeover were measured by diaphragm type vacuum gauge 27.
Figs. 5(A) and 5(B) are graphic expressions of pressure fluctuations when changing over the lines 22 and 24. In Figs. 5(A) and 5(B), the set pressure in chamber 20 is 5 Torr, the time interval of line changeover is 20 to 10 to 5 seconds, and mass flow controllers are used as the chamber pressure regulators 21 and 23.
In Figs. 6(A) and 6(B), the set pressure in chamber 20 is 0.2 Torr, the time interval of line changeover is 30 to 10 to 5 seconds, and mass flow controllers are used as the pressure regulators 21 and 23.
Vent lines are provided in Figs. 5(A) and 6(A), and are not provided in Figs. 5(B) and 6(B).
Figs. 7(A) and 7(B) are graphic expressions of the pressure difference in chamber 20 observed when changing over the lines, relative to the set pressure in chamber 20. Figs. 7(A) and 7(B) show the values obtained when the time interval of line changeover is 60, 30, 10, and 5 seconds, and mass flow controllers are used as the chamber pressure regulators, 21 and 23. A vent line is provided in Fig. 7(A) and is not provided in Fig. 7(B).
Figs. 8(A) and 8(B) are graphic expressions of pressure fluctuations in chamber 20 ob5erved when a vent , 2139426 line is provided, and the time interval of line changeover is 30, 10 to 5 seconds. In Figs. 8(A), mass flow controllers are used as the chamber pressure regulators 21 and 23, whereas in Fig 8(B), direct diaphragm type flow regulating valves are used as the chamber pressure regulators 21 and 23.
The test results in Figs. 5 to 8 clearly show:
(1) when the pressure in chamber 20 is vacuum, pressure fluctuations occur in chamber 20 during changeover of lines 22 and 24 (see Figs. 5 and 6);
(2) the pressure difference varies depending on whether the line is changed from the reactive gas feed line 22 to the inert gas feed line 24, or whether it is changed from the inert gas feed line 24 to the reactive gas feed line 22, (see Figs. 5 and 6);
(3) the shorter the time interval of line changeover, the larger the pressure difference (see Figs. 5 and 6);
(4) the pressure difference tends to be smaller in the absence of a vent line (See Fig. 7);
(5) the pressure difference is smaller when the vacuum pressure of the chamber 20 is lower, but a pressure fluctuation of about twenty times the set pressure occurs (see Fig. 7); and (6) the pressure difference is greater when mass flow controllers are used as chamber pressure regulators 21 and 23 than when direct diaphragm type flow regulating valves are used (Fig. 8).
213~426 In the prior art gas piping system shown in Fig.
4, it is practically impossible to suppress the pressure fluctuations in the chamber 20 when changing over the lines 22 and 24.
Summary of the Invention To at least partially overcome the above problems of the prior art, the present invention provides a gas piping system and a method for feeding gas into a chamber wherein pressure fluctuations in the chamber are suppressed during changeover of the gas feed lines.
The present inventors have conducted extensive chamber pressure fluctuation tests, varying the parameters of chamber vacuum pressure, vent line pressure, line changeover time intervals, and others, and have learned from the test results that pressure fluctuations in the chamber can be suppressed by evacuating and exhausting the vent line.
To achieve the above object, the present invention provides a gas piping system and a gas feed method for feeding reactive gas into a chamber to form a film on a wafer through a reactive gas feed line having a chamber pressure regulator and a line changeover valve, and alternately feeding inert gas into the chamber through an inert gas feed line having a chamber pressure regulator and a line changeover valve. Shunt valves are connected as branches to the primary side of the line changeover valves (i.e. "upstream" of the line changeover valves), and a vent 213~426 line is connected to the outlet side of the shunt valves.
Simultaneous opening and closing of the line changeover valve of the reactive gas feed line and shunt valve of the inert gas feed line is alternated with simultaneous opening and closing of the line changeover valve of the inert gas feed line and the shunt valve of the reactive gas feed line at specific time intervals while the vent line is evacuated by a vacuum pump, so that the reactive gas and inert gas may be alternately fed into the chamber from the reactive gas feed line and inert gas feed line.
To feed the reactive gas into the chamber, the line changeover valve of the reactive gas feed line and the shunt valve of the inert gas feed line are opened, while the line changeover valve of the inert gas feed line and the shunt valve of the reactive gas feed line are closed. In this manner, the reactive gas is supplied from the reactive gas feed line into the chamber. At this time, the flow rate of reactive gas is adjusted by the chamber pressure regulator so that the pressure in the chamber may be suited to the film forming process. Since the vent line is evacuated and exhausted, the inert gas of the inert gas feed line flows into the vent line while the reactive gas is supplied to the chamber.
Similarly, to feed inert gas into the chamber, the line changeover valve of the inert gas feed line and the shunt valve of the reactive gas feed line are opened, while the line changeover valve of the reactive gas feed line and 2l3~26 the shunt valve of the inert gas feed line are closed. The flow rate of the inert gas at this time is adjusted by the chamber pressure regulator so that the pressure in the chamber may be suited to the film forming process. When feeding inert gas, the vent line is evacuated and exhausted, and therefore the reactive gas in the reactive gas feed line flows into the vent line.
In the above manner, the reactive gas and inert gas are alternately supplied into the chamber during each specified time interval.
In the invention, since the reactive gas and inert gas are supplied alternately into the chamber while evacuating and exhausting the vent line, the pressure difference is eliminated between the line feeding gas into the chamber and the line being vented. As a result, there is no large pressure fluctuation during changeover of the lines, thus suppressing the pressure fluctuations in the chamber.
It is an object of the present invention to provide an improved method for feeding gas into a chamber.
It is another object of the invention to provide an improved gas piping system for feeding gas into a chamber.
It is yet another object of the present invention to provide a method for feeding gas into a chamber whereby pressure fluctuations in the chamber during line changeover are substantially suppressed.
It is yet another object of the present invention to provide a gas piping system for feeding gas into a chamber whereby pressure fluctuations in the chamber during line changeover are substantially suppressed.
In one aspect the present invention provides a method for feeding gas into a chamber to form a film on a wafer, comprising: alternately feeding reactive gas through a reactive gas feed line into the chamber and feeding an inert gas through an inert gas feed line into the chamber;
said gas feed lines each comprising a line changeover valve, a chamber pressure regulator, a shunt valve upstream of the line changeover valve, the shunt valves having outlets connected to a vent line; wherein the line changeover valve of the reactive gas feed line and the shunt valve of the inert gas feed line are opened simultaneously to feed reactive gas into the chamber, and the line changeover valve of the inert gas feed line and the shunt valve of the reactive gas feed line are opened simultaneously to feed inert gas into the chamber, the vent line being evacuated by a vacuum pump; the lines being changed over at the end of a specified time interval.
In another aspect, the present invention provides a gas piping system for alternately feeding reactive gas and inert gas into a chamber to form a film on a wafer, said system comprising: a chamber; a reactive gas feed line comprising a line changeover valve and a chamber pressure regulator; a shunt valve connected to the reactive gas feed line upstream of the line changeover valve; an inert gas feed line comprising a line changeover valve and a chamber pressure regulator; a shunt valve connected to the inert gas feed line upstream of the line changeover valve; and a vent line connected to the shunt valves, said vent line being connected to a vacuum pump for evacuating and exhausting the vent line.
In a further aspect, the present invention relates to a method for alternately feeding a first gas successively through a first pressure regulator, a first feed line and a first changeover valve to a chamber evacuated to a set pressure, or feeding a second gas successively through a second pressure regulator, a second feed line a second changeover valve to said chamber, said method comprising alternately evacuating the second feed line while opening the first changeover valve to feed the first gas to the chamber, and evacuating the first feed line while opening the second changeover valve to feed the second gas to the chamber, whereby the pressure in said first feed line at the time said first changeover valve is opened and the pressure in said second feed line at the time said second changeover valve is opened is approximately equal to the set pressure in the chamber.
In a preferred embodiment, the chamber is evacuated to a set pressure of between about 0.2 to 5.0 Torr. It is also preferable that the first and second feed lines are alternately evacuated by alternately connecting them to a vent line maintained at a pressure of less than about 100 Torr.
More preferably, the chamber is evacuated to a set pressure A
."-~
2 1 3442~
- 13a -of between about 0.2 to 5.0 Torr and said vent line is evacuated to a pressure of about 50 Torr or less.
In a further aspect, the present invention provides in an apparatus for alternately feeding a first gas successively through a first pressure regulator, a first feed line and a first changeover valve to a chamber evacuated to a set pressure, or feeding a second gas successively through a second pressure regulator, a second feed line and a second changeover valve to said chamber, the improvement comprising means for alternately evacuating the second feed line when the first changeover valve is open to feed the first gas to the chamber, and evacuating said first feed line when the second changeover valve is open to feed the second gas to the chamber, whereby the pressure in said first feed line at the time said first changeover valve is opened and the pressure in said second feed line at the time said second changeover valve is opened is approximately equal to the set pressure in the chamber.
Description of the Preferred Embodiments Referring now to Figs. 1 to 3, a preferred gas piping system of the present invention is described in detail below.
Fig. 1 is a schematic block diagram of a preferred gas piping system of the present invention as installed in a semiconductor manufacturing plant. The preferred gas piping system of the present invention comprises a gas feed system, a chamber, and a vacuum exhaust system.
'~4 21 34~2b - 13b -In Fig. 1, reference numeral 1 denotes a reactive gas feed line, 2 is an inert gas feed line, 3 is a chamber, 4 and 5 are chamber pressure regulators, V1 and V2 are line changeover valves, V3 and V4 are shunt valves for venting, 6 is a vent line, V5 is a vent line pressure regulating valve which is preferably provided, 7 is a vacuum exhaust line, 8 and 9 are vacuum pumps, V6 is a switch valve in vacuum exhaust line 7, and 10 and 11 are vacuum gauges.
In the reactive gas feed line 1 and inert gas feed line 2, chamber pressure regulators 4 and S and line changeover valves V1 and V2 are respectively provided.
Downstream from line changeover valves Vl and V2, lines 1 and 2 converge in a common line which extends to chamber 3.
Mass flow controllers are used as chamber pressure regulators 4 and 5. As the line changeover valves Vl and V2, direct touch type metal diaphragm valves, wherein the metal diaphragm directly contacts with the valve seat, are employed.
Shunt valves V3 and V4 are connected as branches to the primary side of line changeover valves V1 and V2 of the reactive gas feed line 1 and inert gas feed line 2, respectively. Direct diaphragm type valves are preferably used as the shunt valves V3 and V4.
The upstream side of vent line 6 is connected to shunt valves V3 and V4 and the downstream side of vent line 6 is connected to vacuum pump 8. Connected as a branch at the downstream side of the vent line 6 is the vent line pressure regulating valve V5 which communicates with the atmosphere. A direct touch type metal diaphragm valve is preferably used as vent line pressure regulating valve V5.
Preferably, line changeover valves Vl and V2 and shunt valves V3 and V4 are air driven valves, and are preferably opened and closed by supplying valve driving air from a solenoid valve (not shown).
Explained below is a preferred method of the present invention for supplying reactive gas and inert gas alternately into chamber 3 using the preferred gas piping system of the present invention shown in Fig. 1.
To supply reactive gas into chamber 3, line changeover valve Vl and shunt valve V4 are opened, while line changeover valve V2 and shunt valve V3 are closed. In 2I3~2~
this manner, the reactive gas is supplied from reactive gas feed line 1 into the chamber 3. At this time, the flow rate of the reactive gas is adjusted by the chamber pressure regulator 4 so that the pressure in chamber 3 may be set at a pressure suited to the wafer film forming process.
Vent line 6 is evacuated and exhausted by the vacuum pump 8, and its pressure is preferably adjusted and controlled to be substantially the same as that of chamber 3 by adjusting vent line pressure regulating valve V5. By evacuating and exhausting vent line 6, the inert gas in inert gas feed line 2 flows through vent line 6 and is exhausted through vent line pressure regulating valve V5.
Similarly, when supplying inert gas into chamber 3, line changeover valve V2 and shunt valve V3 are opened, while line changeover valve V1 and shunt valve V4 are closed. In this manner, the inert gas is supplied from inert gas feed line 2 into chamber 3. The flow rate of the inert gas is adjusted by chamber pressure regulator 5 so that the pressure in chamber 3 may be set at a pressure suited to the film forming process. Vent line 6 is evacuated and exhausted by vacuum pump 8, and its pressure is preferably adjusted and controlled to be substantially the same as the pressure in chamber 3 by adjusting vent line pressure regulating valve V5. By evacuating and exhausting vent line 6, the reactive gas of reactive gas feed line 1 flows through vent line 6 and is exhausted through vent line pressure regulating valve V5.
The pressure in the chamber is preferably set at 2139~26 about 0.2 to about 50 Torr, and the pressure in the vent line is preferably set at about 200 Torr or less.
In this way, while evacuating and exhausting vent line 6, the reactive gas and inert gas are alternately supplied into chamber 3 during specified time intervals.
Since the reactive gas and inert gas are supplied alternately into the chamber 3 while evacuating and exhausting the vent line 6, the difference between the pressure of lines 1 and 2 downstream of chamber pressure regulators 4 and 5 is substantially eliminated. Further, the provision of vent line 6 having vent line pressure regulating valve V5 allows the pressures of vent line 6, chamber 3, the converging portion of lines 1 and 2, and lines 1 and 2 downstream of regulators 4 and 5, to be substantially the same.
As a result, when lines 1 and 2 are changed over, the pressure in chamber 3 preferably does not fluctuate significantly, and thus pressure fluctuations in chamber 3 during line changeover are substantially suppressed.
Fig. 2 and Fig. 3 are graphs showing the results of chamber pressure fluctuation tests using the preferred gas piping system and preferred gas feeding method according to the present invention.
The pressure fluctuation tests were conducted by varying the parameters shown in Table 2 below.
213442fi (Table 2) Parameters Setting Vacuum pressure 50, 5, 1, 0.2 (Torr) in chamber Pressure of vent 760, 500, lO0, 50 and line pressure reached when vent line pressure regulating valve is closed (Torr) Chamber pressure Reactive gas feed line: Mas~
flow controller Inert gas feed line: Mass flow controller Vent line Provided Line changeover 30 (sec), in principle; only interval at the time of vent line reached pressure, 10 to S (sec) The pressure fluctuation tests were executed according to the following procedure. First, line changeover valves Vl and V2 were closed, and chamber 3 (210 mm x 210 mm x 210 mm) was evacuated and exhausted by rotary pump 9.
2l3l~2fi Then, line changeover valve V1 and shunt valve V4 were opened, while line changeover valve V2 and shunt valve V3 were closed. Reactive gas (N2: primary pressure 1.0 kgf/cm2G) is then supplied into chamber 3 from reactive gas feed line 1, and the flow rate is adjusted by chamber pressure regulator 4 to establish a set pressure in chamber 3. Meanwhile, the inert gas (N2: primary pressure 1.0 kgf/cm2G) in the inert gas feed line 2 is exhausted via vent line 6, and vent line pressure regulating valve V5 is opened to set the pressure in vent line 6 to an atmospheric release state.
After the pressure in chamber 3 has stabilized, the gas feed into chamber 3 is changed over from reactive gas feed line 1 to inert gas feed line 2.
It has been confirmed that by performing this operation, the set pressure in chamber 3 and the pressure in vent line 6 become substantially the same, whether gas is being supplied through reactive gas feed line 1 or inert gas feed line 2.
When this preparatory work was completed, reactive gas was supplied into the chamber 3 through reactive gas feed line 1, and stabilization of pressure in chamber 3 was confirmed. When the pressure in chamber 3 had stabilized, the lines 1 and 2 were alternately changed over at the end of every specified time interval.
Parallel to this, the pressure in vent line 6 is evacuated and exhausted from the atmospheric release state by vacuum pump 8, and the pressure in vent line 6 is 2131~26 adjusted by vent line pressure regulating valve V5. During the tests, the pressure fluctuations in chamber 3 were measured by diaphragm type vacuum gauge 10.
Figs. 2(A), 2(B), 2(C) and 2(D) are graphic expressions of pressure fluctuations (curve C) in chamber 3 when lines 1 and 2 are changed over, while regulating the pressure (curve S) of vent line 6.
Fig. 2(A) shows the results of varying the vent line pressure from 760 to 500, 100 and 50 Torr, with the set pressure of chamber 3 at 5 Torr, and a line changeover time interval of 30 sec.
In Fig. 2(B), the set pressure in chamber 3 was 5 Torr, the line changeover interval was varied from 30 to 10 to 5 sec, and the vent line pressure was varied from 100 to 50 Torr, and then to the pressure obtained when vent line pressure regulating valve V5 was closed.
In Fig. 2(C), the set pressure in chamber 3 was 0.2 Torr, the line changeover interval was 30 sec, and the vent line pressure was varied from 760 to 500, 100 and 50 Torr.
In Fig. 2(D), the set pressure in chamber 3 was 0.2 Torr, the line changeover interval was varied from 30 to 10 to 5 sec, and the vent line pressure was varied from 100 to 50 Torr, and then to the pressure obtained when vent line pressure regulating valve V5 was closed.
Fig. 3 shows a graph of the pressure differences observed during changeover of lines 1 and 2 while regulating the pressure of vent line 6. When the vent line pressure was 50 Torr or more, vent line pressure regulating valve V5 was regulated, and when the vent line pressure was 50 Torr or less, vent line pressure regulating valve V5 was closed.
In the graphs of Fig. 2, time 0 to 10 sec. shows the pressure of reactive gas feed line 1, and peak P at 10 sec shows the pressure fluctuation observed when the line is changed from reactive gas feed line 1 to inert gas feed line 2. The points plotted in Fig. 3 represent the maximum value of the pressure difference observed during changeover from reactive gas feed line 1 to inert gas feed line 2, and from inert gas feed line 2 to reactive gas feed line 1.
It is clear from Figs. 2 and 3 that as the pressure of vent line 6 decreases from atmospheric pressure toward vacuum, the pressure fluctuation in chamber 3 becomes smaller. Therefore, evacuating and exhausting vent line 6 during line changeover can substantially suppress pressure fluctuations in chamber 3.
In the above preferred embodiment, mass flow controllers are used as chamber pressure regulators 4 and 5. But it has been confirmed by tests that, in the method of the present invention, direct touch type metal diaphragm valves or a combination of a mass flow controller and a direct touch type metal diaphragm valve can be used as chamber pressure regulators 4 and 5 to suppress the pressure fluctuations in chamber 3.
Tests have also confirmed that, if the inner volume of lines 1 and 2 between mass flow controllers 4 and and line changeover valves V1 and V2 is varied, the 213442fi pressure fluctuations in chamber 3 can still be suppressed.
Although the invention has been described in connection with certain preferred embodiments, it is not intended to be limited thereto. Rather, it is intended that the invention cover all alternate embodiments that may be within the scope of the following claims.
213~426 In the prior art gas piping system shown in Fig.
4, it is practically impossible to suppress the pressure fluctuations in the chamber 20 when changing over the lines 22 and 24.
Summary of the Invention To at least partially overcome the above problems of the prior art, the present invention provides a gas piping system and a method for feeding gas into a chamber wherein pressure fluctuations in the chamber are suppressed during changeover of the gas feed lines.
The present inventors have conducted extensive chamber pressure fluctuation tests, varying the parameters of chamber vacuum pressure, vent line pressure, line changeover time intervals, and others, and have learned from the test results that pressure fluctuations in the chamber can be suppressed by evacuating and exhausting the vent line.
To achieve the above object, the present invention provides a gas piping system and a gas feed method for feeding reactive gas into a chamber to form a film on a wafer through a reactive gas feed line having a chamber pressure regulator and a line changeover valve, and alternately feeding inert gas into the chamber through an inert gas feed line having a chamber pressure regulator and a line changeover valve. Shunt valves are connected as branches to the primary side of the line changeover valves (i.e. "upstream" of the line changeover valves), and a vent 213~426 line is connected to the outlet side of the shunt valves.
Simultaneous opening and closing of the line changeover valve of the reactive gas feed line and shunt valve of the inert gas feed line is alternated with simultaneous opening and closing of the line changeover valve of the inert gas feed line and the shunt valve of the reactive gas feed line at specific time intervals while the vent line is evacuated by a vacuum pump, so that the reactive gas and inert gas may be alternately fed into the chamber from the reactive gas feed line and inert gas feed line.
To feed the reactive gas into the chamber, the line changeover valve of the reactive gas feed line and the shunt valve of the inert gas feed line are opened, while the line changeover valve of the inert gas feed line and the shunt valve of the reactive gas feed line are closed. In this manner, the reactive gas is supplied from the reactive gas feed line into the chamber. At this time, the flow rate of reactive gas is adjusted by the chamber pressure regulator so that the pressure in the chamber may be suited to the film forming process. Since the vent line is evacuated and exhausted, the inert gas of the inert gas feed line flows into the vent line while the reactive gas is supplied to the chamber.
Similarly, to feed inert gas into the chamber, the line changeover valve of the inert gas feed line and the shunt valve of the reactive gas feed line are opened, while the line changeover valve of the reactive gas feed line and 2l3~26 the shunt valve of the inert gas feed line are closed. The flow rate of the inert gas at this time is adjusted by the chamber pressure regulator so that the pressure in the chamber may be suited to the film forming process. When feeding inert gas, the vent line is evacuated and exhausted, and therefore the reactive gas in the reactive gas feed line flows into the vent line.
In the above manner, the reactive gas and inert gas are alternately supplied into the chamber during each specified time interval.
In the invention, since the reactive gas and inert gas are supplied alternately into the chamber while evacuating and exhausting the vent line, the pressure difference is eliminated between the line feeding gas into the chamber and the line being vented. As a result, there is no large pressure fluctuation during changeover of the lines, thus suppressing the pressure fluctuations in the chamber.
It is an object of the present invention to provide an improved method for feeding gas into a chamber.
It is another object of the invention to provide an improved gas piping system for feeding gas into a chamber.
It is yet another object of the present invention to provide a method for feeding gas into a chamber whereby pressure fluctuations in the chamber during line changeover are substantially suppressed.
It is yet another object of the present invention to provide a gas piping system for feeding gas into a chamber whereby pressure fluctuations in the chamber during line changeover are substantially suppressed.
In one aspect the present invention provides a method for feeding gas into a chamber to form a film on a wafer, comprising: alternately feeding reactive gas through a reactive gas feed line into the chamber and feeding an inert gas through an inert gas feed line into the chamber;
said gas feed lines each comprising a line changeover valve, a chamber pressure regulator, a shunt valve upstream of the line changeover valve, the shunt valves having outlets connected to a vent line; wherein the line changeover valve of the reactive gas feed line and the shunt valve of the inert gas feed line are opened simultaneously to feed reactive gas into the chamber, and the line changeover valve of the inert gas feed line and the shunt valve of the reactive gas feed line are opened simultaneously to feed inert gas into the chamber, the vent line being evacuated by a vacuum pump; the lines being changed over at the end of a specified time interval.
In another aspect, the present invention provides a gas piping system for alternately feeding reactive gas and inert gas into a chamber to form a film on a wafer, said system comprising: a chamber; a reactive gas feed line comprising a line changeover valve and a chamber pressure regulator; a shunt valve connected to the reactive gas feed line upstream of the line changeover valve; an inert gas feed line comprising a line changeover valve and a chamber pressure regulator; a shunt valve connected to the inert gas feed line upstream of the line changeover valve; and a vent line connected to the shunt valves, said vent line being connected to a vacuum pump for evacuating and exhausting the vent line.
In a further aspect, the present invention relates to a method for alternately feeding a first gas successively through a first pressure regulator, a first feed line and a first changeover valve to a chamber evacuated to a set pressure, or feeding a second gas successively through a second pressure regulator, a second feed line a second changeover valve to said chamber, said method comprising alternately evacuating the second feed line while opening the first changeover valve to feed the first gas to the chamber, and evacuating the first feed line while opening the second changeover valve to feed the second gas to the chamber, whereby the pressure in said first feed line at the time said first changeover valve is opened and the pressure in said second feed line at the time said second changeover valve is opened is approximately equal to the set pressure in the chamber.
In a preferred embodiment, the chamber is evacuated to a set pressure of between about 0.2 to 5.0 Torr. It is also preferable that the first and second feed lines are alternately evacuated by alternately connecting them to a vent line maintained at a pressure of less than about 100 Torr.
More preferably, the chamber is evacuated to a set pressure A
."-~
2 1 3442~
- 13a -of between about 0.2 to 5.0 Torr and said vent line is evacuated to a pressure of about 50 Torr or less.
In a further aspect, the present invention provides in an apparatus for alternately feeding a first gas successively through a first pressure regulator, a first feed line and a first changeover valve to a chamber evacuated to a set pressure, or feeding a second gas successively through a second pressure regulator, a second feed line and a second changeover valve to said chamber, the improvement comprising means for alternately evacuating the second feed line when the first changeover valve is open to feed the first gas to the chamber, and evacuating said first feed line when the second changeover valve is open to feed the second gas to the chamber, whereby the pressure in said first feed line at the time said first changeover valve is opened and the pressure in said second feed line at the time said second changeover valve is opened is approximately equal to the set pressure in the chamber.
Description of the Preferred Embodiments Referring now to Figs. 1 to 3, a preferred gas piping system of the present invention is described in detail below.
Fig. 1 is a schematic block diagram of a preferred gas piping system of the present invention as installed in a semiconductor manufacturing plant. The preferred gas piping system of the present invention comprises a gas feed system, a chamber, and a vacuum exhaust system.
'~4 21 34~2b - 13b -In Fig. 1, reference numeral 1 denotes a reactive gas feed line, 2 is an inert gas feed line, 3 is a chamber, 4 and 5 are chamber pressure regulators, V1 and V2 are line changeover valves, V3 and V4 are shunt valves for venting, 6 is a vent line, V5 is a vent line pressure regulating valve which is preferably provided, 7 is a vacuum exhaust line, 8 and 9 are vacuum pumps, V6 is a switch valve in vacuum exhaust line 7, and 10 and 11 are vacuum gauges.
In the reactive gas feed line 1 and inert gas feed line 2, chamber pressure regulators 4 and S and line changeover valves V1 and V2 are respectively provided.
Downstream from line changeover valves Vl and V2, lines 1 and 2 converge in a common line which extends to chamber 3.
Mass flow controllers are used as chamber pressure regulators 4 and 5. As the line changeover valves Vl and V2, direct touch type metal diaphragm valves, wherein the metal diaphragm directly contacts with the valve seat, are employed.
Shunt valves V3 and V4 are connected as branches to the primary side of line changeover valves V1 and V2 of the reactive gas feed line 1 and inert gas feed line 2, respectively. Direct diaphragm type valves are preferably used as the shunt valves V3 and V4.
The upstream side of vent line 6 is connected to shunt valves V3 and V4 and the downstream side of vent line 6 is connected to vacuum pump 8. Connected as a branch at the downstream side of the vent line 6 is the vent line pressure regulating valve V5 which communicates with the atmosphere. A direct touch type metal diaphragm valve is preferably used as vent line pressure regulating valve V5.
Preferably, line changeover valves Vl and V2 and shunt valves V3 and V4 are air driven valves, and are preferably opened and closed by supplying valve driving air from a solenoid valve (not shown).
Explained below is a preferred method of the present invention for supplying reactive gas and inert gas alternately into chamber 3 using the preferred gas piping system of the present invention shown in Fig. 1.
To supply reactive gas into chamber 3, line changeover valve Vl and shunt valve V4 are opened, while line changeover valve V2 and shunt valve V3 are closed. In 2I3~2~
this manner, the reactive gas is supplied from reactive gas feed line 1 into the chamber 3. At this time, the flow rate of the reactive gas is adjusted by the chamber pressure regulator 4 so that the pressure in chamber 3 may be set at a pressure suited to the wafer film forming process.
Vent line 6 is evacuated and exhausted by the vacuum pump 8, and its pressure is preferably adjusted and controlled to be substantially the same as that of chamber 3 by adjusting vent line pressure regulating valve V5. By evacuating and exhausting vent line 6, the inert gas in inert gas feed line 2 flows through vent line 6 and is exhausted through vent line pressure regulating valve V5.
Similarly, when supplying inert gas into chamber 3, line changeover valve V2 and shunt valve V3 are opened, while line changeover valve V1 and shunt valve V4 are closed. In this manner, the inert gas is supplied from inert gas feed line 2 into chamber 3. The flow rate of the inert gas is adjusted by chamber pressure regulator 5 so that the pressure in chamber 3 may be set at a pressure suited to the film forming process. Vent line 6 is evacuated and exhausted by vacuum pump 8, and its pressure is preferably adjusted and controlled to be substantially the same as the pressure in chamber 3 by adjusting vent line pressure regulating valve V5. By evacuating and exhausting vent line 6, the reactive gas of reactive gas feed line 1 flows through vent line 6 and is exhausted through vent line pressure regulating valve V5.
The pressure in the chamber is preferably set at 2139~26 about 0.2 to about 50 Torr, and the pressure in the vent line is preferably set at about 200 Torr or less.
In this way, while evacuating and exhausting vent line 6, the reactive gas and inert gas are alternately supplied into chamber 3 during specified time intervals.
Since the reactive gas and inert gas are supplied alternately into the chamber 3 while evacuating and exhausting the vent line 6, the difference between the pressure of lines 1 and 2 downstream of chamber pressure regulators 4 and 5 is substantially eliminated. Further, the provision of vent line 6 having vent line pressure regulating valve V5 allows the pressures of vent line 6, chamber 3, the converging portion of lines 1 and 2, and lines 1 and 2 downstream of regulators 4 and 5, to be substantially the same.
As a result, when lines 1 and 2 are changed over, the pressure in chamber 3 preferably does not fluctuate significantly, and thus pressure fluctuations in chamber 3 during line changeover are substantially suppressed.
Fig. 2 and Fig. 3 are graphs showing the results of chamber pressure fluctuation tests using the preferred gas piping system and preferred gas feeding method according to the present invention.
The pressure fluctuation tests were conducted by varying the parameters shown in Table 2 below.
213442fi (Table 2) Parameters Setting Vacuum pressure 50, 5, 1, 0.2 (Torr) in chamber Pressure of vent 760, 500, lO0, 50 and line pressure reached when vent line pressure regulating valve is closed (Torr) Chamber pressure Reactive gas feed line: Mas~
flow controller Inert gas feed line: Mass flow controller Vent line Provided Line changeover 30 (sec), in principle; only interval at the time of vent line reached pressure, 10 to S (sec) The pressure fluctuation tests were executed according to the following procedure. First, line changeover valves Vl and V2 were closed, and chamber 3 (210 mm x 210 mm x 210 mm) was evacuated and exhausted by rotary pump 9.
2l3l~2fi Then, line changeover valve V1 and shunt valve V4 were opened, while line changeover valve V2 and shunt valve V3 were closed. Reactive gas (N2: primary pressure 1.0 kgf/cm2G) is then supplied into chamber 3 from reactive gas feed line 1, and the flow rate is adjusted by chamber pressure regulator 4 to establish a set pressure in chamber 3. Meanwhile, the inert gas (N2: primary pressure 1.0 kgf/cm2G) in the inert gas feed line 2 is exhausted via vent line 6, and vent line pressure regulating valve V5 is opened to set the pressure in vent line 6 to an atmospheric release state.
After the pressure in chamber 3 has stabilized, the gas feed into chamber 3 is changed over from reactive gas feed line 1 to inert gas feed line 2.
It has been confirmed that by performing this operation, the set pressure in chamber 3 and the pressure in vent line 6 become substantially the same, whether gas is being supplied through reactive gas feed line 1 or inert gas feed line 2.
When this preparatory work was completed, reactive gas was supplied into the chamber 3 through reactive gas feed line 1, and stabilization of pressure in chamber 3 was confirmed. When the pressure in chamber 3 had stabilized, the lines 1 and 2 were alternately changed over at the end of every specified time interval.
Parallel to this, the pressure in vent line 6 is evacuated and exhausted from the atmospheric release state by vacuum pump 8, and the pressure in vent line 6 is 2131~26 adjusted by vent line pressure regulating valve V5. During the tests, the pressure fluctuations in chamber 3 were measured by diaphragm type vacuum gauge 10.
Figs. 2(A), 2(B), 2(C) and 2(D) are graphic expressions of pressure fluctuations (curve C) in chamber 3 when lines 1 and 2 are changed over, while regulating the pressure (curve S) of vent line 6.
Fig. 2(A) shows the results of varying the vent line pressure from 760 to 500, 100 and 50 Torr, with the set pressure of chamber 3 at 5 Torr, and a line changeover time interval of 30 sec.
In Fig. 2(B), the set pressure in chamber 3 was 5 Torr, the line changeover interval was varied from 30 to 10 to 5 sec, and the vent line pressure was varied from 100 to 50 Torr, and then to the pressure obtained when vent line pressure regulating valve V5 was closed.
In Fig. 2(C), the set pressure in chamber 3 was 0.2 Torr, the line changeover interval was 30 sec, and the vent line pressure was varied from 760 to 500, 100 and 50 Torr.
In Fig. 2(D), the set pressure in chamber 3 was 0.2 Torr, the line changeover interval was varied from 30 to 10 to 5 sec, and the vent line pressure was varied from 100 to 50 Torr, and then to the pressure obtained when vent line pressure regulating valve V5 was closed.
Fig. 3 shows a graph of the pressure differences observed during changeover of lines 1 and 2 while regulating the pressure of vent line 6. When the vent line pressure was 50 Torr or more, vent line pressure regulating valve V5 was regulated, and when the vent line pressure was 50 Torr or less, vent line pressure regulating valve V5 was closed.
In the graphs of Fig. 2, time 0 to 10 sec. shows the pressure of reactive gas feed line 1, and peak P at 10 sec shows the pressure fluctuation observed when the line is changed from reactive gas feed line 1 to inert gas feed line 2. The points plotted in Fig. 3 represent the maximum value of the pressure difference observed during changeover from reactive gas feed line 1 to inert gas feed line 2, and from inert gas feed line 2 to reactive gas feed line 1.
It is clear from Figs. 2 and 3 that as the pressure of vent line 6 decreases from atmospheric pressure toward vacuum, the pressure fluctuation in chamber 3 becomes smaller. Therefore, evacuating and exhausting vent line 6 during line changeover can substantially suppress pressure fluctuations in chamber 3.
In the above preferred embodiment, mass flow controllers are used as chamber pressure regulators 4 and 5. But it has been confirmed by tests that, in the method of the present invention, direct touch type metal diaphragm valves or a combination of a mass flow controller and a direct touch type metal diaphragm valve can be used as chamber pressure regulators 4 and 5 to suppress the pressure fluctuations in chamber 3.
Tests have also confirmed that, if the inner volume of lines 1 and 2 between mass flow controllers 4 and and line changeover valves V1 and V2 is varied, the 213442fi pressure fluctuations in chamber 3 can still be suppressed.
Although the invention has been described in connection with certain preferred embodiments, it is not intended to be limited thereto. Rather, it is intended that the invention cover all alternate embodiments that may be within the scope of the following claims.
Claims (20)
1. A method for feeding gas into a chamber to form a film on a wafer, comprising:
alternately feeding reactive gas through a reactive gas feed line into the chamber and feeding an inert gas through an inert gas feed line into the chamber;
said gas feed lines each comprising a line changeover valve, a chamber pressure regulator, and a shunt valve upstream of the line changeover valve, the shunt valves having outlets connected to a vent line;
wherein the line changeover valve of the reactive gas feed line and the shunt valve of the inert gas feed line are opened simultaneously to feed reactive gas into the chamber, and the line changeover valve of the inert gas feed line and the shunt valve of the reactive gas feed line are opened simultaneously to feed inert gas into the chamber, the vent line being evacuated by a vacuum pump;
the lines being changed over at the end of a specified time interval.
alternately feeding reactive gas through a reactive gas feed line into the chamber and feeding an inert gas through an inert gas feed line into the chamber;
said gas feed lines each comprising a line changeover valve, a chamber pressure regulator, and a shunt valve upstream of the line changeover valve, the shunt valves having outlets connected to a vent line;
wherein the line changeover valve of the reactive gas feed line and the shunt valve of the inert gas feed line are opened simultaneously to feed reactive gas into the chamber, and the line changeover valve of the inert gas feed line and the shunt valve of the reactive gas feed line are opened simultaneously to feed inert gas into the chamber, the vent line being evacuated by a vacuum pump;
the lines being changed over at the end of a specified time interval.
2. The method of claim 1, wherein a vent line pressure regulating valve having an outlet released to the atmosphere is connected as a branch to the vent line, and the pressure in the vent line is regulated by adjusting the vent line pressure regulating valve.
3. The method of claim 1, wherein the pressure in the chamber is set at about 0.2 to about 50 Torr, and the pressure in the vent line is set at about 200 Torr or less.
4. The method of any one of claims 1 to 3, wherein the chamber pressure regulators are selected from the group comprising mass flow controllers and direct touch type metal diaphragm valves, and the changeover valves and shunt valves are direct touch type metal diaphragm valves.
5. The method of claim 4, wherein the chamber pressure regulators, changeover valves and shunt valves are direct touch type metal diaphragm valves.
6. A gas piping system for alternately feeding reactive gas and inert gas into a chamber to form a film on a wafer, said system comprising:
a chamber;
a reactive gas feed line comprising a line changeover valve and a chamber pressure regulator;
a shunt valve connected to the reactive gas feed line upstream of the line changeover valve;
an inert gas feed line comprising a line changeover valve and a chamber pressure regulator;
a shunt valve connected to the inert gas feed line upstream of the line changeover valve; and a vent line connected to the shunt valves, said vent line being connected to a vacuum pump for evacuating and exhausting the vent line.
a chamber;
a reactive gas feed line comprising a line changeover valve and a chamber pressure regulator;
a shunt valve connected to the reactive gas feed line upstream of the line changeover valve;
an inert gas feed line comprising a line changeover valve and a chamber pressure regulator;
a shunt valve connected to the inert gas feed line upstream of the line changeover valve; and a vent line connected to the shunt valves, said vent line being connected to a vacuum pump for evacuating and exhausting the vent line.
7. The gas piping system of claim 6, wherein a vent line pressure regulating valve having an outlet released to the atmosphere is connected as a branch to the vent line, the vent line pressure regulating valve being adapted to regulate the pressure in the vent line.
8. The system of claim 6, wherein the chamber pressure regulators are selected from the group comprising mass flow controllers and direct touch type metal diaphragm valves, and the changeover valves and shunt valves are direct touch type metal diaphragm valves.
9. The system of claim 8, wherein the chamber pressure regulators, changeover valves and shunt valves are direct touch type metal diaphragm valves.
10. A method for alternately feeding a first gas successively through a first pressure regulator, a first feed line and a first changeover valve to a chamber evacuated to a set pressure, or feeding a second gas successively through a second pressure regulator, a second feed line a second changeover valve to said chamber, said method comprising alternately evacuating the second feed line while opening the first changeover valve to feed the first gas to the chamber, and evacuating the first feed line while opening the second changeover valve to feed the second gas to the chamber, whereby the pressure in said first feed line at the time said first changeover valve is opened and the pressure in said second feed line at the time said second changeover valve is opened is approximately equal to the set pressure in the chamber.
11. A method as claimed in claim 10, wherein said chamber is evacuated to a set pressure of between about 0.2 to 5.0 Torr.
12. A method as claimed in claim 10 wherein said first and said second feed lines are alternately evacuated by alternately connecting them to a vent line maintained at a pressure of less than about 100 Torr.
13. A method as claimed in claim 12 wherein said chamber is evacuated to a set pressure of between about 0.2 to 5.0 Torr and said vent line is evacuated to a pressure of about 50 Torr or less.
14. In an apparatus for alternately feeding a first gas successively through a first pressure regulator, a first feed line and a first changeover valve to a chamber evacuated to a set pressure, or feeding a second gas successively through a second pressure regulator, a second feed line and a second changeover valve to said chamber, the improvement comprising means for alternately evacuating the second feed line when the first changeover valve is open to feed the first gas to the chamber, and evacuating said first feed line when the second changeover valve is open to feed the second gas to the chamber, whereby the pressure in said first feed line at the time said first changeover valve is opened and the pressure in said second feed line at the time said second changeover valve is opened is approximately equal to the set pressure in the chamber.
15. The improvement as claimed in claim 14 wherein the means for alternately evacuating the first and second feed lines comprises a vent line, a vacuum pump connected to said vent line, a first shunt valve connected between the vent line and first feed line and a second shunt valve connected between the vent line and the second feed line.
16. The improvement as claimed in claim 15 wherein said first and second changeover valves and said first and second shunt valves are direct touch metal diaphragm valves.
17. The improvement as claimed in claim 15 and further comprising a pressure regulating valve for regulating the pressure in said vent line, said pressure regulating valve venting said vent line to atmosphere to regulate the pressure in said vent line.
18. The improvement as claimed in claim 16 wherein said first and second pressure regulators are mass flow controllers for controlling the rate of flow of said first and second gases to said chamber so as to substantially maintain said set pressure in said chamber.
19. The improvement as claimed in claim 16 wherein said first and second pressure regulators, said first and second changeover valves and said first and second shunt valves comprise direct touch metal diaphragm valves.
20. The improvement as claimed in claim 14 wherein said chamber is a chamber in which a film is formed on a wafer, said first and second gases being a reactive gas and an inert gas, respectively, and means for evacuating said chamber to said set pressure.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5-268689 | 1993-10-27 | ||
| JP26868993A JP3332053B2 (en) | 1993-10-27 | 1993-10-27 | Gas supply method to chamber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2134426A1 CA2134426A1 (en) | 1995-04-28 |
| CA2134426C true CA2134426C (en) | 1998-03-31 |
Family
ID=17462022
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002134426A Expired - Fee Related CA2134426C (en) | 1993-10-27 | 1994-10-26 | Method of feeding gas into a chamber |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5488967A (en) |
| EP (1) | EP0651432B1 (en) |
| JP (1) | JP3332053B2 (en) |
| KR (1) | KR0138609B1 (en) |
| CA (1) | CA2134426C (en) |
| DE (1) | DE69417682T2 (en) |
| SG (1) | SG45144A1 (en) |
| TW (1) | TW267235B (en) |
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| TW490756B (en) | 1999-08-31 | 2002-06-11 | Hitachi Ltd | Method for mass production of semiconductor integrated circuit device and manufacturing method of electronic components |
| US6223770B1 (en) * | 1999-09-29 | 2001-05-01 | Lsi Logic Corporation | Vacuum valve interface |
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| KR100863782B1 (en) * | 2002-03-08 | 2008-10-16 | 도쿄엘렉트론가부시키가이샤 | Substrate processing apparatus and substrate processing method |
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| KR101940325B1 (en) * | 2011-10-05 | 2019-01-18 | 가부시키가이샤 호리바 에스텍 | Fluid mechanism, support member constituting fluid mechanism and fluid control system |
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-
1993
- 1993-10-27 JP JP26868993A patent/JP3332053B2/en not_active Expired - Fee Related
-
1994
- 1994-08-17 TW TW083107561A patent/TW267235B/zh active
- 1994-09-22 SG SG1996000475A patent/SG45144A1/en unknown
- 1994-09-22 DE DE69417682T patent/DE69417682T2/en not_active Expired - Fee Related
- 1994-09-22 EP EP94306952A patent/EP0651432B1/en not_active Expired - Lifetime
- 1994-10-10 KR KR1019940025874A patent/KR0138609B1/en not_active IP Right Cessation
- 1994-10-21 US US08/327,419 patent/US5488967A/en not_active Expired - Fee Related
- 1994-10-26 CA CA002134426A patent/CA2134426C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0651432A1 (en) | 1995-05-03 |
| DE69417682T2 (en) | 2000-01-05 |
| JPH07122498A (en) | 1995-05-12 |
| EP0651432B1 (en) | 1999-04-07 |
| DE69417682D1 (en) | 1999-05-12 |
| KR0138609B1 (en) | 1998-06-15 |
| CA2134426A1 (en) | 1995-04-28 |
| US5488967A (en) | 1996-02-06 |
| TW267235B (en) | 1996-01-01 |
| JP3332053B2 (en) | 2002-10-07 |
| SG45144A1 (en) | 1998-01-16 |
| KR950012566A (en) | 1995-05-16 |
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