CA2158959A1 - Electrically Erasable, Directly Overwritable, Multibit Single Cell Memory Elements and Arrays Fabricated Therefrom - Google Patents

Electrically Erasable, Directly Overwritable, Multibit Single Cell Memory Elements and Arrays Fabricated Therefrom

Info

Publication number
CA2158959A1
CA2158959A1 CA2158959A CA2158959A CA2158959A1 CA 2158959 A1 CA2158959 A1 CA 2158959A1 CA 2158959 A CA2158959 A CA 2158959A CA 2158959 A CA2158959 A CA 2158959A CA 2158959 A1 CA2158959 A1 CA 2158959A1
Authority
CA
Canada
Prior art keywords
memory element
single cell
cell memory
electrically erasable
memory elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2158959A
Other languages
French (fr)
Other versions
CA2158959C (en
Inventor
Stanford R. Ovshinsky
Qiuyi Ye
David A. Strand
Wolodymyr Czubatyj
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2158959A1 publication Critical patent/CA2158959A1/en
Application granted granted Critical
Publication of CA2158959C publication Critical patent/CA2158959C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode

Abstract

The present invention comprises an electrically operated, directly overwritable, multibit, single-cell memory element. The memory element includes a volume of memory material (36) which defines the single cell memory element, a pair of spacedly disposed contacts (32, 34, 38, 40) for supply electrical input signals to set the memory material to a selected resistance value within a dynamic range, a filamentary portion controlling means disposed between the volume of memory material and at least one of the spacedly disposed contacts.
The controlling means defining the size and the position of the filamentary portion during electrical formation of the memory element and limiting the size and confining the location of the filamentary portion during use of the memory element, thereby proving for a high current density within the filamentary portion of the single cell memory element upon input of a very low total current electrical signal to the spacedly disposed contacts.
CA002158959A 1993-04-12 1994-04-11 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom Expired - Fee Related CA2158959C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US046,249 1993-04-12
US08/046,249 US5406509A (en) 1991-01-18 1993-04-12 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
PCT/US1994/003953 WO1994024707A1 (en) 1993-04-12 1994-04-11 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom

Publications (2)

Publication Number Publication Date
CA2158959A1 true CA2158959A1 (en) 1994-10-27
CA2158959C CA2158959C (en) 1999-06-22

Family

ID=21942430

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002158959A Expired - Fee Related CA2158959C (en) 1993-04-12 1994-04-11 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom

Country Status (6)

Country Link
US (1) US5406509A (en)
EP (1) EP0694214B1 (en)
AU (1) AU6498894A (en)
CA (1) CA2158959C (en)
DE (1) DE69431053T2 (en)
WO (1) WO1994024707A1 (en)

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EP0694214A1 (en) 1996-01-31
DE69431053T2 (en) 2003-03-20
US5406509A (en) 1995-04-11
DE69431053D1 (en) 2002-08-29
AU6498894A (en) 1994-11-08
EP0694214A4 (en) 1997-07-30
CA2158959C (en) 1999-06-22
EP0694214B1 (en) 2002-07-24
WO1994024707A1 (en) 1994-10-27

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