CA2159642A1 - Method for Fabricating Suspension Members for Micromachined Sensors - Google Patents

Method for Fabricating Suspension Members for Micromachined Sensors

Info

Publication number
CA2159642A1
CA2159642A1 CA2159642A CA2159642A CA2159642A1 CA 2159642 A1 CA2159642 A1 CA 2159642A1 CA 2159642 A CA2159642 A CA 2159642A CA 2159642 A CA2159642 A CA 2159642A CA 2159642 A1 CA2159642 A1 CA 2159642A1
Authority
CA
Canada
Prior art keywords
wafers
etch stop
stop layer
mass
support frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2159642A
Other languages
French (fr)
Other versions
CA2159642C (en
Inventor
Raymond K. Erickson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
I/O Sensors Inc
Original Assignee
Raymond K. Erickson
I/O Sensors, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raymond K. Erickson, I/O Sensors, Inc. filed Critical Raymond K. Erickson
Publication of CA2159642A1 publication Critical patent/CA2159642A1/en
Application granted granted Critical
Publication of CA2159642C publication Critical patent/CA2159642C/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/012—Bonding, e.g. electrostatic for strain gauges

Abstract

A method for fabricating a connecting spring member (24) of an arbitrary shape extending between a central mass (21) and an outer support frame (23) of a sensor as shown in Figure 7 is disclosed. Each of a pair of generally identical silicon wafers (10, 12) has an inner etch stop layer (16) applied to one face with an outer epitaxial layer (18) formed over such etch stop layer (16). A photosensitive oxide layer (30) is applied to the other face of each of the wafers (10, 12). Next, a pattern of the central mass (21) and outer support frame (23) as shown in Figure 2 is photographically imposed on the photosensitive oxide layers (18) of each wafer (10, 12). After wet chemical etching of the wafers (10, 12) removes silicon material to the etch stop layer, and the etch stop layer is itself removed in the space between the mass and the frame, the two wafers (10, 12) are bonded to each other as shown in Figure 5. Next, the spring shape, of any arbitrary shape is formed by plasma etching from the outer surfaces of the bonded wafers (10, 12) in the area between the mass and the frame. Accordingly the spring members (24) extend between the central mass (21) and the outer support frame (23).
CA002159642A 1994-03-28 1995-03-16 Method for fabricating suspension members for micromachined sensors Expired - Lifetime CA2159642C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/218,363 US5484073A (en) 1994-03-28 1994-03-28 Method for fabricating suspension members for micromachined sensors
US218,363 1994-03-28
PCT/US1995/003377 WO1995026567A1 (en) 1994-03-28 1995-03-16 Method for fabricating suspension members for micromachined sensors

Publications (2)

Publication Number Publication Date
CA2159642A1 true CA2159642A1 (en) 1995-09-29
CA2159642C CA2159642C (en) 1999-08-17

Family

ID=22814808

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002159642A Expired - Lifetime CA2159642C (en) 1994-03-28 1995-03-16 Method for fabricating suspension members for micromachined sensors

Country Status (8)

Country Link
US (1) US5484073A (en)
EP (1) EP0700580B1 (en)
JP (2) JP3741723B2 (en)
AU (1) AU2102195A (en)
CA (1) CA2159642C (en)
DE (1) DE69531580T2 (en)
HK (1) HK1004876A1 (en)
WO (1) WO1995026567A1 (en)

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US9294011B2 (en) * 2011-02-07 2016-03-22 Ion Geophysical Corporation Method and apparatus for sensing underwater signals
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US8822336B2 (en) 2011-06-16 2014-09-02 United Microelectronics Corp. Through-silicon via forming method
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US8900996B2 (en) 2012-06-21 2014-12-02 United Microelectronics Corp. Through silicon via structure and method of fabricating the same
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US8912844B2 (en) 2012-10-09 2014-12-16 United Microelectronics Corp. Semiconductor structure and method for reducing noise therein
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US9035457B2 (en) 2012-11-29 2015-05-19 United Microelectronics Corp. Substrate with integrated passive devices and method of manufacturing the same
US8716104B1 (en) 2012-12-20 2014-05-06 United Microelectronics Corp. Method of fabricating isolation structure
CN104045049A (en) * 2013-03-12 2014-09-17 北京大学 Processing method of high-precision accelerometer based on silicon layer transfer (SOLT) technology
US8884398B2 (en) 2013-04-01 2014-11-11 United Microelectronics Corp. Anti-fuse structure and programming method thereof
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US9123730B2 (en) 2013-07-11 2015-09-01 United Microelectronics Corp. Semiconductor device having through silicon trench shielding structure surrounding RF circuit
US9024416B2 (en) 2013-08-12 2015-05-05 United Microelectronics Corp. Semiconductor structure
US8916471B1 (en) 2013-08-26 2014-12-23 United Microelectronics Corp. Method for forming semiconductor structure having through silicon via for signal and shielding structure
US9048223B2 (en) 2013-09-03 2015-06-02 United Microelectronics Corp. Package structure having silicon through vias connected to ground potential
US9117804B2 (en) 2013-09-13 2015-08-25 United Microelectronics Corporation Interposer structure and manufacturing method thereof
US9343359B2 (en) 2013-12-25 2016-05-17 United Microelectronics Corp. Integrated structure and method for fabricating the same
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Also Published As

Publication number Publication date
EP0700580A4 (en) 1998-02-11
DE69531580D1 (en) 2003-10-02
AU2102195A (en) 1995-10-17
JP2006116693A (en) 2006-05-11
WO1995026567A1 (en) 1995-10-05
US5484073A (en) 1996-01-16
JP4267611B2 (en) 2009-05-27
DE69531580T2 (en) 2004-07-01
EP0700580B1 (en) 2003-08-27
HK1004876A1 (en) 1998-12-11
JP3741723B2 (en) 2006-02-01
CA2159642C (en) 1999-08-17
EP0700580A1 (en) 1996-03-13
JPH08511379A (en) 1996-11-26

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