CA2166507A1 - Field Emission Devices Employing Activated Diamond Particle Emitters and Methods for Making Same - Google Patents

Field Emission Devices Employing Activated Diamond Particle Emitters and Methods for Making Same

Info

Publication number
CA2166507A1
CA2166507A1 CA2166507A CA2166507A CA2166507A1 CA 2166507 A1 CA2166507 A1 CA 2166507A1 CA 2166507 A CA2166507 A CA 2166507A CA 2166507 A CA2166507 A CA 2166507A CA 2166507 A1 CA2166507 A1 CA 2166507A1
Authority
CA
Canada
Prior art keywords
field emission
methods
making same
emission devices
diamond particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2166507A
Other languages
French (fr)
Other versions
CA2166507C (en
Inventor
Sungho Jin
Gregory Peter Kochanski
Wei Zhu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T IPM Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T IPM Corp filed Critical AT&T IPM Corp
Publication of CA2166507A1 publication Critical patent/CA2166507A1/en
Application granted granted Critical
Publication of CA2166507C publication Critical patent/CA2166507C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/022Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J23/00Details of transit-time tubes of the types covered by group H01J25/00
    • H01J23/02Electrodes; Magnetic control means; Screens
    • H01J23/06Electron or ion guns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00Electrodes common to discharge tubes
    • H01J2201/30Cold cathodes
    • H01J2201/304Field emission cathodes
    • H01J2201/30403Field emission cathodes characterised by the emitter shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00Electrodes common to discharge tubes
    • H01J2201/30Cold cathodes
    • H01J2201/304Field emission cathodes
    • H01J2201/30446Field emission cathodes characterised by the emitter material
    • H01J2201/30453Carbon types
    • H01J2201/30457Diamond

Abstract

A field emission device is made by pre-activating ultra-fine diamond particles before applying them to the device substrate. This initial pre-activation increases manufacturing speed and reduces cost and reduces potential damage to the device substrate from exposure to high temperature hydrogen plasma.
CA002166507A 1995-01-31 1996-01-03 Field emission devices employing activated diamond particle emitters and methods for making same Expired - Fee Related CA2166507C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/381,375 US5616368A (en) 1995-01-31 1995-01-31 Field emission devices employing activated diamond particle emitters and methods for making same
US381,375 1995-01-31

Publications (2)

Publication Number Publication Date
CA2166507A1 true CA2166507A1 (en) 1996-08-01
CA2166507C CA2166507C (en) 2000-12-12

Family

ID=23504783

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002166507A Expired - Fee Related CA2166507C (en) 1995-01-31 1996-01-03 Field emission devices employing activated diamond particle emitters and methods for making same

Country Status (5)

Country Link
US (1) US5616368A (en)
EP (1) EP0725415B1 (en)
JP (1) JP3096629B2 (en)
CA (1) CA2166507C (en)
DE (1) DE69605459T2 (en)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2726689B1 (en) * 1994-11-08 1996-11-29 Commissariat Energie Atomique FIELD-EFFECT ELECTRON SOURCE AND MANUFACTURING METHOD THEREOF, APPLICATION TO CATHODOLUMINESCENCE VISUALIZATION DEVICES
US5982095A (en) * 1995-09-19 1999-11-09 Lucent Technologies Inc. Plasma displays having electrodes of low-electron affinity materials
US5948465A (en) * 1995-11-15 1999-09-07 E. I. Du Pont De Nemours And Company Process for making a field emitter cathode using a particulate field emitter material
WO1997018576A1 (en) * 1995-11-15 1997-05-22 E.I. Du Pont De Nemours And Company Diamond powder field emitters and field emitter cathodes made therefrom
US5837331A (en) * 1996-03-13 1998-11-17 Motorola, Inc. Amorphous multi-layered structure and method of making the same
AU3715997A (en) * 1996-06-12 1998-01-07 Trustees Of Princeton University, The Plasma treatment of conductive layers
GB9626221D0 (en) * 1996-12-18 1997-02-05 Smiths Industries Plc Diamond surfaces
WO1998045868A1 (en) * 1997-04-09 1998-10-15 Matsushita Electric Industrial Co., Ltd. Electron emitting device and method of manufacturing the same
RU2161838C2 (en) * 1997-06-24 2001-01-10 Тарис Технолоджис, Инк. Field-emission film-coated cathode and process of its manufacture
DE19757141A1 (en) * 1997-12-20 1999-06-24 Philips Patentverwaltung Array of diamond / hydrogen electrodes
JPH11213866A (en) 1998-01-22 1999-08-06 Sony Corp Electron-emitting device, its manufacture, and display apparatus using the device
US6010918A (en) * 1998-02-10 2000-01-04 Fed Corporation Gate electrode structure for field emission devices and method of making
JP2963993B1 (en) * 1998-07-24 1999-10-18 工業技術院長 Ultra-fine particle deposition method
JP2000182508A (en) 1998-12-16 2000-06-30 Sony Corp Field emission type cathode, electron emitting device, and manufacture of electron emitting device
GB9905132D0 (en) 1999-03-06 1999-04-28 Smiths Industries Plc Electron emitting devices
JP3595718B2 (en) 1999-03-15 2004-12-02 株式会社東芝 Display element and method of manufacturing the same
GB0006762D0 (en) * 2000-03-22 2000-05-10 Smiths Industries Plc Displays
GB0015928D0 (en) * 2000-06-30 2000-08-23 Printable Field Emitters Limit Field emitters
US7085351B2 (en) * 2000-10-06 2006-08-01 University Of North Carolina At Chapel Hill Method and apparatus for controlling electron beam current
US6553096B1 (en) 2000-10-06 2003-04-22 The University Of North Carolina Chapel Hill X-ray generating mechanism using electron field emission cathode
US7082182B2 (en) * 2000-10-06 2006-07-25 The University Of North Carolina At Chapel Hill Computed tomography system for imaging of human and small animal
US6876724B2 (en) * 2000-10-06 2005-04-05 The University Of North Carolina - Chapel Hill Large-area individually addressable multi-beam x-ray system and method of forming same
US7227924B2 (en) * 2000-10-06 2007-06-05 The University Of North Carolina At Chapel Hill Computed tomography scanning system and method using a field emission x-ray source
US6436221B1 (en) * 2001-02-07 2002-08-20 Industrial Technology Research Institute Method of improving field emission efficiency for fabricating carbon nanotube field emitters
JP4095272B2 (en) * 2001-09-25 2008-06-04 株式会社東芝 Fine particle production method and fine particle production apparatus
US6541397B1 (en) * 2002-03-29 2003-04-01 Applied Materials, Inc. Removable amorphous carbon CMP stop
US7510818B2 (en) * 2002-12-09 2009-03-31 Pixelligent Technologies Llc Reversible photobleachable materials based on nano-sized semiconductor particles and their optical applications
US7447298B2 (en) * 2003-04-01 2008-11-04 Cabot Microelectronics Corporation Decontamination and sterilization system using large area x-ray source
JP2005174856A (en) * 2003-12-15 2005-06-30 Toshiba Corp Sealant and image display device using the same
US7262555B2 (en) * 2005-03-17 2007-08-28 Micron Technology, Inc. Method and system for discretely controllable plasma processing
US8155262B2 (en) * 2005-04-25 2012-04-10 The University Of North Carolina At Chapel Hill Methods, systems, and computer program products for multiplexing computed tomography
JP2007299723A (en) * 2006-04-07 2007-11-15 Asahi Glass Co Ltd Field-electron emitting element
US8189893B2 (en) * 2006-05-19 2012-05-29 The University Of North Carolina At Chapel Hill Methods, systems, and computer program products for binary multiplexing x-ray radiography
US7751528B2 (en) * 2007-07-19 2010-07-06 The University Of North Carolina Stationary x-ray digital breast tomosynthesis systems and related methods
US8600003B2 (en) * 2009-01-16 2013-12-03 The University Of North Carolina At Chapel Hill Compact microbeam radiation therapy systems and methods for cancer treatment and research
US8338317B2 (en) * 2011-04-06 2012-12-25 Infineon Technologies Ag Method for processing a semiconductor wafer or die, and particle deposition device
JP5987150B2 (en) * 2010-03-04 2016-09-07 イマジニアリング株式会社 Film forming device
US8358739B2 (en) 2010-09-03 2013-01-22 The University Of North Carolina At Chapel Hill Systems and methods for temporal multiplexing X-ray imaging
US9782136B2 (en) 2014-06-17 2017-10-10 The University Of North Carolina At Chapel Hill Intraoral tomosynthesis systems, methods, and computer readable media for dental imaging
US10980494B2 (en) 2014-10-20 2021-04-20 The University Of North Carolina At Chapel Hill Systems and related methods for stationary digital chest tomosynthesis (s-DCT) imaging
US10835199B2 (en) 2016-02-01 2020-11-17 The University Of North Carolina At Chapel Hill Optical geometry calibration devices, systems, and related methods for three dimensional x-ray imaging

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5131941A (en) * 1959-04-08 1992-07-21 Lemelson Jerome H Reaction apparatus and method
CA1235087A (en) * 1983-11-28 1988-04-12 Akio Hiraki Diamond-like thin film and method for making the same
FR2623013A1 (en) * 1987-11-06 1989-05-12 Commissariat Energie Atomique ELECTRO SOURCE WITH EMISSIVE MICROPOINT CATHODES AND FIELD EMISSION-INDUCED CATHODOLUMINESCENCE VISUALIZATION DEVICE USING THE SOURCE
JPH01246116A (en) * 1988-03-29 1989-10-02 Natl Inst For Res In Inorg Mater Production of acicular, fibrous or porous diamond or their aggregate
US4874981A (en) * 1988-05-10 1989-10-17 Sri International Automatically focusing field emission electrode
US5019003A (en) * 1989-09-29 1991-05-28 Motorola, Inc. Field emission device having preformed emitters
US5234723A (en) * 1990-10-05 1993-08-10 Polar Materials Inc. Continous plasma activated species treatment process for particulate
US5129850A (en) * 1991-08-20 1992-07-14 Motorola, Inc. Method of making a molded field emission electron emitter employing a diamond coating
US5138237A (en) * 1991-08-20 1992-08-11 Motorola, Inc. Field emission electron device employing a modulatable diamond semiconductor emitter
JP3255960B2 (en) * 1991-09-30 2002-02-12 株式会社神戸製鋼所 Cold cathode emitter element
US5283500A (en) * 1992-05-28 1994-02-01 At&T Bell Laboratories Flat panel field emission display apparatus
US5278475A (en) * 1992-06-01 1994-01-11 Motorola, Inc. Cathodoluminescent display apparatus and method for realization using diamond crystallites
US5463271A (en) * 1993-07-09 1995-10-31 Silicon Video Corp. Structure for enhancing electron emission from carbon-containing cathode
US5474808A (en) * 1994-01-07 1995-12-12 Michigan State University Method of seeding diamond
US5709577A (en) * 1994-12-22 1998-01-20 Lucent Technologies Inc. Method of making field emission devices employing ultra-fine diamond particle emitters
US5925701A (en) * 1997-12-22 1999-07-20 Eastman Kodak Company Stable aqueous polymeric dispersions containing hydrated metal salts of strong acids

Also Published As

Publication number Publication date
JPH08241665A (en) 1996-09-17
DE69605459D1 (en) 2000-01-13
CA2166507C (en) 2000-12-12
EP0725415A3 (en) 1996-11-27
JP3096629B2 (en) 2000-10-10
EP0725415B1 (en) 1999-12-08
EP0725415A2 (en) 1996-08-07
US5616368A (en) 1997-04-01
DE69605459T2 (en) 2000-07-27

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EEER Examination request
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