CA2181591A1 - Electrostatic discharge protection of isfet sensors - Google Patents

Electrostatic discharge protection of isfet sensors

Info

Publication number
CA2181591A1
CA2181591A1 CA002181591A CA2181591A CA2181591A1 CA 2181591 A1 CA2181591 A1 CA 2181591A1 CA 002181591 A CA002181591 A CA 002181591A CA 2181591 A CA2181591 A CA 2181591A CA 2181591 A1 CA2181591 A1 CA 2181591A1
Authority
CA
Canada
Prior art keywords
isfet
liquid
interface
electrostatic discharge
capacitor structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002181591A
Other languages
French (fr)
Other versions
CA2181591C (en
Inventor
Ronald D. Baxter
James G. Connery
John D. Fogel
Spencer V. Silverthorne
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2181591A1 publication Critical patent/CA2181591A1/en
Application granted granted Critical
Publication of CA2181591C publication Critical patent/CA2181591C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Methods, apparatus and chip fabrication techniques are described which provide electrostatic discharge (ESD) protection to ion-sensitive field effect transistors (ISFET) based device (250) used to selectively measure ions in liquid (299).
According to one aspect of the invention, an ESD protection circuit, made up of conventional protective elements (201, 202, 206), is integrated onto the same silicon chip on which ISFET (250) is formed, along with interface (203) that is in contact with liquid (299) being measured and which does not open up paths for D.C.
leakage currents between ISFET
(250) and liquid (299). According to a preferred embodiment of the invention, a capacitor structure is used as interface (203) between protection circuit (201, 202, 206) and liquid sample (299).
Further aspects of the invention are directed to methods per se for providing ESD protection for ISFET sensors utilizing interface means (203) (e.g., capacitor structure) referred to hereinabove, and processes for fabricating the novel interface on a silicone wafer.
CA002181591A 1994-01-19 1995-01-12 Electrostatic discharge protection of isfet sensors Expired - Fee Related CA2181591C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US8-183,733 1994-01-19
US08/183,733 US5414284A (en) 1994-01-19 1994-01-19 ESD Protection of ISFET sensors
PCT/US1995/000426 WO1995020243A1 (en) 1994-01-19 1995-01-12 Electrostatic discharge protection of isfet sensors

Publications (2)

Publication Number Publication Date
CA2181591A1 true CA2181591A1 (en) 1995-07-27
CA2181591C CA2181591C (en) 2008-04-29

Family

ID=22674080

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002181591A Expired - Fee Related CA2181591C (en) 1994-01-19 1995-01-12 Electrostatic discharge protection of isfet sensors

Country Status (10)

Country Link
US (2) US5414284A (en)
EP (1) EP0749632B1 (en)
JP (1) JP3701308B2 (en)
KR (1) KR100358534B1 (en)
CN (1) CN1120985C (en)
AU (1) AU1602195A (en)
CA (1) CA2181591C (en)
DE (1) DE69535202T2 (en)
RU (1) RU2134877C1 (en)
WO (1) WO1995020243A1 (en)

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Also Published As

Publication number Publication date
EP0749632A1 (en) 1996-12-27
JPH09508207A (en) 1997-08-19
RU2134877C1 (en) 1999-08-20
EP0749632B1 (en) 2006-08-30
DE69535202T2 (en) 2007-07-19
JP3701308B2 (en) 2005-09-28
DE69535202D1 (en) 2006-10-12
EP0749632A4 (en) 1999-11-24
AU1602195A (en) 1995-08-08
CN1120985C (en) 2003-09-10
CA2181591C (en) 2008-04-29
WO1995020243A1 (en) 1995-07-27
US5407854A (en) 1995-04-18
CN1143428A (en) 1997-02-19
US5414284A (en) 1995-05-09
KR100358534B1 (en) 2003-01-25

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Effective date: 20130114