CA2218876C - Elastomeric micro electro mechanical systems - Google Patents
Elastomeric micro electro mechanical systems Download PDFInfo
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- CA2218876C CA2218876C CA002218876A CA2218876A CA2218876C CA 2218876 C CA2218876 C CA 2218876C CA 002218876 A CA002218876 A CA 002218876A CA 2218876 A CA2218876 A CA 2218876A CA 2218876 C CA2218876 C CA 2218876C
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- microelectrodes
- substrate
- microstructures
- electromechanical transducer
- macroelectrodes
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
- H02N1/002—Electrostatic motors
- H02N1/006—Electrostatic motors of the gap-closing type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/0292—Electrostatic transducers, e.g. electret-type
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
- G01H11/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties
- G01H11/06—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means
Abstract
An electromechanical transducer having a substrate (4) bearing a plurality of elastomeric microstructures (5) with a microelectrode (6) on each microstructure. A power supply (11) is connected to the microelectrodes for controlled application to them of an electrical potential which alternately induces forces of attraction between adjacent pairs of microelectrodes, causing controlled, time-varying displacement of the microelectrodes. Alternatively, a further plurality of microelectrodes (14), or one or more macroelectrodes (32), are elastomerically supported above the microelectrodes, with the power supply being connected to the macroelectrode(s) such that the electrical potential applied between the microelectrodes and macroelectrode(s) alternately induces forces of attraction between the microelectrodes and macroelectrode(s), causing controlled, time-varying displacement of the microelectrodes relative to the macroelectrode(s). The macroelectrode(s) can also be applied to a side of the substrate opposite the microstructures.
Description
ELA~-lOI.~KIC MICRO ELECTRO MEC~ANICAL SY~-lL_IS
Field of the Invention This invention relates to a microelectromechanical ~5 transducer comprising a number o~ microelectrodes elastic-ally supported on an elastomeric microstructure.
Background o~ the Invention The past decade has seen rapid growth in the ~ield o~
10 Micro Electro Mechanical Systems, which is commonly re~er-red to by its acronym "MEMS". As the name implies, MEMS
are basically micro systems which incorporate some type o~
electromechanical transduction to achieve a given ~unction.
In this case, "micro" re~ers to component ~eatures of the 15 order micrometers. Examples o~ MEMS devices include micropumps, micromotors, micro-optical mirrors, etc. A
recent review of the state o~ the art in MEMS is given in "Micromachines on the March," IEEE Spectrum, May 1994, pp.
20-31.
Many o~ the MEMS devices reported in the literature use electrostatic transduction. Like most electromechani-cal transducers, electrostatic transducers can be con~igur-ed either as actuators or as sensors. When con-~igured as actuators, which are o~ particular relevance to the present application, electrostatic transducers utilize the attrac-tion o~ opposite charges to produce a ~orce o~ attraction.
For a parallel plate con~iguration, this ~orce, or pressure P is readily calculable as ~ollows:
P= 1 ~ E2= ~ )2 (1) where ~O is the permittivity o~ air (8.85 x 10-12 F/m) and E
is the electric ~ield. In the case o~ parallel electrodes, E=V/d, and so the second relation may be used.
There are numerous examples in the literature o~ MEMS
devices which utilize electrostatic actuating ~orces. See ~or example: Zengerle, R., et al., 1992, "A Micro Membrane Pump with Electrostatic Actuation," IEEE Micro Electro Mechanical Systems Workshop.; Gabriel K.J. et al., 1992, CA 022l8876 l997-l0-22 "Surface Normal Electrostatic/Pneumatic Actuator," IEEE
Micro Electro Mechanical Systems Workshop; Bobbio et al., 1993, "Integrated Force Arrays," Proc. of IEEE MEMS 1993 Workshop, pp. 149-154; and, K. M;n~m; et al., 1993, "Fabri-cation of Distributed Electrostatic Micro Actuator (DEMA),"
J. of MEMS, Vol. 2, No. 3, 1993.
Some of the main reasons for choosing electrostatics over other methods of transduction are as follows:
(1) Enerqy Density: For a given voltage applied between two electrodes, the electric field increases in proportion to the decrease in separation between the electrodes. Since the electrostatic force is propor-tional to the square of the electric field, a single order of magnitude closer spacing of the electrodes results in two orders of magnitude greater electro-static force for the same voltage. Cooperating with this, the electric field strength of most gases also increases rapidly with decreasing distance (see for example: H.L. Saums, "Materials for Electrical Insu-lating and Dielectric Functions," Hayden Book Co., 1973). Thus it is apparent that electrostatic forces scale well for use in MEMS devices.
Field of the Invention This invention relates to a microelectromechanical ~5 transducer comprising a number o~ microelectrodes elastic-ally supported on an elastomeric microstructure.
Background o~ the Invention The past decade has seen rapid growth in the ~ield o~
10 Micro Electro Mechanical Systems, which is commonly re~er-red to by its acronym "MEMS". As the name implies, MEMS
are basically micro systems which incorporate some type o~
electromechanical transduction to achieve a given ~unction.
In this case, "micro" re~ers to component ~eatures of the 15 order micrometers. Examples o~ MEMS devices include micropumps, micromotors, micro-optical mirrors, etc. A
recent review of the state o~ the art in MEMS is given in "Micromachines on the March," IEEE Spectrum, May 1994, pp.
20-31.
Many o~ the MEMS devices reported in the literature use electrostatic transduction. Like most electromechani-cal transducers, electrostatic transducers can be con~igur-ed either as actuators or as sensors. When con-~igured as actuators, which are o~ particular relevance to the present application, electrostatic transducers utilize the attrac-tion o~ opposite charges to produce a ~orce o~ attraction.
For a parallel plate con~iguration, this ~orce, or pressure P is readily calculable as ~ollows:
P= 1 ~ E2= ~ )2 (1) where ~O is the permittivity o~ air (8.85 x 10-12 F/m) and E
is the electric ~ield. In the case o~ parallel electrodes, E=V/d, and so the second relation may be used.
There are numerous examples in the literature o~ MEMS
devices which utilize electrostatic actuating ~orces. See ~or example: Zengerle, R., et al., 1992, "A Micro Membrane Pump with Electrostatic Actuation," IEEE Micro Electro Mechanical Systems Workshop.; Gabriel K.J. et al., 1992, CA 022l8876 l997-l0-22 "Surface Normal Electrostatic/Pneumatic Actuator," IEEE
Micro Electro Mechanical Systems Workshop; Bobbio et al., 1993, "Integrated Force Arrays," Proc. of IEEE MEMS 1993 Workshop, pp. 149-154; and, K. M;n~m; et al., 1993, "Fabri-cation of Distributed Electrostatic Micro Actuator (DEMA),"
J. of MEMS, Vol. 2, No. 3, 1993.
Some of the main reasons for choosing electrostatics over other methods of transduction are as follows:
(1) Enerqy Density: For a given voltage applied between two electrodes, the electric field increases in proportion to the decrease in separation between the electrodes. Since the electrostatic force is propor-tional to the square of the electric field, a single order of magnitude closer spacing of the electrodes results in two orders of magnitude greater electro-static force for the same voltage. Cooperating with this, the electric field strength of most gases also increases rapidly with decreasing distance (see for example: H.L. Saums, "Materials for Electrical Insu-lating and Dielectric Functions," Hayden Book Co., 1973). Thus it is apparent that electrostatic forces scale well for use in MEMS devices.
(2) Efficiency: Electrostatic devices typically have a relatively high efficiency because they do not require the large current densities, and associated high internal resistance losses, associated with magnetic or shape memory alloy based actuators. The efficiency of an electrostatic device is especially good when the relative electrode motion is a substantial fraction of the inter-electrode gap, as is often the case in MEMS
devices.
devices.
(3) Cost: Unlike most other transducers, in particular piezoelectric and magnetostrictive, electrostatic transducers require only electrodes which hold the opposite electrical charges to bring about the mechan-ical force. It is typically much less expensive to deposit electrodes only, than to deposit both elec-trodes and a piezoelectric material (~or example) which is then excited by the electrode.
Although electrostatic actuation mechanisms have the desirable ~eatures noted above, there are certain instances where e~iciency is not so crucial, and in which it may be more advantageous to employ magnetic actuation. One advantage o~ magnetic actuation is the ability to achieve ~orces which act over a longer distance, since the ~orce decreases only linearly with microelectrode separation, as opposed to quadratically in the case of electrostatic ~orces ~or a ~ixed current and potential respectively.
Also, lower voltages can typically be employed in magneti-cally driven actuators since their per~ormance is indepen-dent o~ applied voltage, and depends only on current ~low.
Even i~ e~iciency is not o~ great concern, it is necessary to pay close attention to the dissipation o~ heat produced by the resistive power consumption o~ the microelectrodes carrying the actuating currents.
The ~ield of MEMS appears to have arisen ~rom two ~actors: curiosity to explore the limits of miniaturization o~ electromechanical devices (see ~or example Feynman, R., 1993, ~In~initesimal Ma~h;n~ry," J. MEMS, Vol. 2, No. 1,) and the widespread availability of micromach;n;ng equipment used in the manu~acture of integrated circuits. Micromach-ining techniques are now quite advanced, especially withthe recent addition o~ techniques such as LIGA, silicon ~usion bonding, etc.; and allow ~or the construction o~ a wide range o~ devices. But, these micromach;n;ng tech-niques are inherently expensive per unit area, even on large volume production scales, so it appears that they may always be con~ined to applications which have a very high value per unit area o~ micromachined sur~ace.
Another limitation o~ current MEMS technology is that ~ the means ~or allowing relative motion between the elec-trodes is provided by mechanical linkages, or the bending o~ thin, highly cantilevered structures. For example, in the device described in the Bobbio et al. paper re~erenced above, the spacing between the support points which define each "cell" in the array must be reasonably large relative to the thickness of the polyamide/metal structure, due to the relatively high elastic modulus of these materials. In addition to making the design and construction o~ such devices quite complex, these relatively thin structures are quite ~ragile and are therefore not well suited for uses where durability is of concern. These and other disadvan-tages of prior art MEMS technology can be overcome through the use of a new type of MEMS technology called elastomeric microelectromechanical systems ("EMEMS"), as described below.
Summary of the Invention It is an object of this invention to provide a micro-electromechanical device in which microelectrodes supported on an elastomeric microstructure undergo substantial relative motion in response to electrostatic forces.
Another object of the invention is to provide a microelectromechanical transducer which can be constructed inexpensively using microstructured surfaces of molded elastomeric films.
A further object of the invention is to employ a useful range of inter-electrode spacing between oppositely charged microelectrodes in EMEMS; namely less than 2 times the Paschen m; n;mllm distance for the gas and gas pressure in question.
Yet another object of the invention is to provide a means of increasing the path length over solid surfaces in mutual contact with oppositely charged microelectrodes, while simultaneously providing a means for patterning said microelectrodes and extending the flow path region.
It is yet a further object of the invention to provide a means of creating more complex structures by using facing microstructured surfaces.
These and other objects are attained by providing a microelectromechanical transducer in which microelectrodes are selectively deposited on a microstructured sur~ace.
The microelectrodes are selectively connected to a means for energizing them, such that electrostatic ~orces can be generated between any two oppositely charged microelec-trodes, or between a microelectrode and a closely proximatemacroelectrode.
The microstructures are pre~erably constructed using a low elastic modulus material having a high elastic strain limit, such materials typically being re~erred to as elastomers. This, combined with appropriate microstruc-tural design and location o~ the microelectrodes, allows the electrostatic ~orces to cause substantial relative motion between the oppositely charged microelectrodes, or between a microelectrode and a closely proximate macro-electrode. This EMEMS design technique may o~er speci~ic per~ormance advantages over conventional MEMS devices, such as improved durability. But, the most important advantage is expected to be greatly reduced manu~acturing cost per unit area.
Fabrication o~ the microstructures with low modulus, high elasticity, elastomeric materials allows the micro-structures to have a relatively low aspect ratio, yet still be highly ~lexible. By contrast, high modulus silicon microstructures used in conventional MEMS devices require a relatively high aspect ratio in order to be substantially ~lexible. The use o~ low aspect ratios ~acilitates use o~
two key manu~acturing techniques. First, the microstruc-tures may be designed in the ~orm o~ moldable sur~ace structures on a ~ilm-like elastomer sheet material.
Second, a mold may be micromachined ~or use in microrepli-cating structured sur~ace elastomer ~ilms, using known ~ large-scale microma~h;n;ng techniques such as diamond ma~h; n; ng Microreplication on film sur~aces to produce - the microstructures dramatically reduces the cost o~
production compared to conventional micromach; n; ng Finally, using appropriate structural design and physical vapour deposition techniques, one may selectively deposit CA 022l8876 l997-l0-22 the microelectrodes without resorting to the expensive masking procedures commonly used in ~abricating conven-tional MEMS devices. All o~ these ~eatures com~bine to allow EMEMS devices to be produced inexpensively using known mass production techniques.
Brie~ Description o~ the Drawinqs Figure lA is a greatly magni~ied, ~ragmented cross-sectional perspective illustration o~ a pre~erred embodi-ment o~ the invention.
Figure lB is a ~ragmented cross-sectional elevation of the structure depicted in Figure lA, showing one position o~ the microelectrodes when in a state o~ excitation caused by the application o~ the labelled potentials.
Figure lC is a ~ragmented cross-sectional elevation o~
the structure depicted in Figure lA, showing a second position o~ the microelectrodes when in a second state o~
excitation caused by the application o~ the labelled poten-tials.
Figure lD depicts the structure o~ Figure lA with the addition of a connection means for making electrical contact with each individual microelectrode.
Figure lE iS a top plan view o~ the structure shown in Figure lD.
Figure 2A is a cross-sectional elevation o~ the structure depicted in Figure lA, and illustrates how microstructural design principles can be used to achieve various objects o~ the invention.
Figure 2B is a sc~nn;ng electron micrograph showing a metal coated elastomer microstructure constructed in accordance with the invention.
Figure 3 depicts a greatly magni~ied pair o~ opposed microstructured sur~aces which provide a plurality o~ gas reservoirs.
Figure 4 is similar to Figure 3, but eliminates the upper microstructure, shows placement o~ gas reservoirs in the lower microstructure and a macroelectrode elastomer-ically supported thereabove.
Figures 5A and 5B depict an embodiment having a macroelectrode beneath the embodiment of Figure 1.
Figure 6 depicts an embodiment similar to that of Figures lA-lD, in which microelectrode-bearing elastomeric microstructures are provided on both sides of a planar substrate.
Detailed DescriPtion of the Preferred Embodiment Figure lA provides a cross-sectional perspective view of a device constructed in accordance with the preferred embodiment of the invention. The device consists o~ a linear array of (typically over 1,000) evenly spaced micro-electrodes 6 individually supported atop microstructuredelastomeric ridges 5. Microstructured elastomeric ridges 5 are formed as surface features on an elastomeric sub-strate film or sheet 4.
Microstructure ridges 5 can be economically produced using high volume molding microreplication techniques as is known in the art of producing microstructured surface products such as micro-prismatic optical films. Microelec-trodes 6 can be formed using any one of a number o~ good electrically conductive materials such as pure metals (e.g.
Al, Cu, Au), metal alloys, metal oxides (e.g. indium tin oxide), superconductors, conductive polymers, shape memory alloys, or conductive elastomers.
In cases where the strain required of the conductive material is rel~tively high, it may be desirable to utilize a conductive elastomer material for the microelectrode to reduce the risk of mechanical fatigue failures which might result in breaks in the conductivity of the microelec-trodes. A preferred technique for deposition of microelec-trodes 6 atop ridges 5 is hereinafter described in more detail.
An important object of the Figure lA device is to achieve harmonic motion of microelectrodes 6 at a given CA 022l8876 l997-l0-22 ~requency ~ and as a ~unction o~ time t, in a direction substantially parallel to the plane o~ microstructured sheet 4. Such motion could be use~ul ~or a number o~ ~luid dynamic applications such as boundary layer control, where it is desirable to control microscale aspects o~ a ~luid-sur~ace interaction to a~ect macroscale ~low in a substan-tial manner. For example, this e~ect could be used to increase the level o~ ~luid mixing in a boundary layer and thereby increase its momentum exchange. Under certain electrical drive conditions the e~ect might also be use~ully employed to reduce the level o~ turbulent mixing and thereby reduce sur~ace drag on an aerodynamic body such as an aircra~t. The use o~ micromechanical devices ~or interaction with ~luid ~lows is discussed in more detail in re~erences such as Ho, Chih-Ming, "Interaction Between Fluid Dynamics And New Technology," First International Con~erence on Flow Interaction, Keynote Talk, Sept. 5-9, 1994.
The means by which the desired harmonic motion o~
microelectrodes 6 is attained will now be described with re~erence to Figures lB and lC. One o~ ~our unique elec-trical driving potential ~unctions a, b, c or d is applied to each microelectrode 6, where:
a = +V b = +V sin(2~t) c - -V d = -V sin(2~t) These ~unctions are applied in turn to adjacent microelec-trodes in a repeating m~nn~r as shown in Figure lB. Elec-trostatic ~orces generated by this sequence o~ driving potentials causes motion o~ microelectrodes 6 via de~or-mation o~ their supporting microstructured elastomeric ridges 5 in the ~ollowing m~nner~ At time t=O, microelec-trodes 6 are in the unde~ormed state shown in Figure lA.
At t=1/(4~), microelectrodes 6 are in a state o~ m~;m~lm de~ormation as shown in Figure lB. At t=1/(2~), microelec-trodes 6 will pass through the unde~ormed state shown inFigure lA. Finally, at t=3/(4~), microelectrodes 6 will be at the opposite state o~ m~; mllm de~ormation shown in g Figure lC. This pattern o~ motion is repeated at the frequency ~ and thereby achieves the desired operation. It will thus be understood that the applied electrical poten-tial alternately induces ~orces o~ attraction between adjacent pairs of microelectrodes 6, causing controlled, time-varying displacement o~ the microelectrodes.
Pre~erably, each o~ microelectrodes 6 has an individ-ual cross-sectional area less than 0.01 mm2; and, the displacement exceeds one percent o~ the square root o~ such cross-sectional area.
An edge connecting strip 10 can be used to electri-cally connect microelectrodes 6 to an appropriate power supply 11, as shown in Figures lD and lE. Connecting strip consists o~ a number o~ protruding microstructured ridges 8 which separate and support inverted "U" shaped electrical contacts 9. Ridges 8 are geometrically con-~igured ~or simultaneous insertion between microstructured elastomeric ridges 5. The geometry is made such that the clearance between the interleaving series o~ ridges 5, 8 is suf~icient to allow relatively easy insertion, yet still provide good electrical contact between contacts 9 and the adjacent sur~aces o~ the respective microelectrodes 6.
Each one o~ inverted "U" shaped electrical contacts 9 ~orms part o~ an electrically conductive path which carries the appropriate drive signal (i.e. a, b, c, or d) ~rom power supply 11. This can easily be achieved by applying a micropatterned wiring scheme to connecting strip lO using well known integrated circuit ~abrication technology such as photolithography. Since microelectrodes 6 and contacts 9 are in intimate contact, a good electrical connection can be achieved, possibly with the assistance o~ a conductive viscous material such as gel applied to one o~ the sur~aces prior to interleaving them as a~oresaid. A suitably high electric ~ield strength dielectric material such as polyi-mide is used to ~orm the bulk o~ each ridge 8 and toelectrically isolate the adjacent conduction paths.
CA 022l8876 l997-l0-22 The maximum electrostatic force which can be generated between microelectrodes 6 is limited by electrical break-down between adjacent electrodes. Although the inventors do not wish to be bound by any particular theories, it seems likely that there are in general three primary modes o~ electrical breakdown in an EMEMS device like that described above.
The ~irst primary mode o~ electrical breakdown is sur-~ace discharge across the elastomer sur~ace between micro-electrodes 6 and/or the planar electrode. A number o~mechanisms such as carbonization can cause sur~ace dis-charge across otherwise non-conducting sur~aces. In most cases, the probability o~ sur~ace discharge increases with increasing voltage per unit path length. Thus, it is desirable to make the path length as long as possible.
This is achieved in the structure o~ the pre~erred e-m-bodi ment by virtue o~ the long path length "S" (Figure 2A) required to traverse the recesses between microelectrodes 6 atop elastomeric ridges 5 (See Figure 2A).
The second primary mode o~ electrical breakdown is avalanche breakdown o~ the gas within the inter-electrode gaps. Avalanche breakdown o~ the gas occurs when the voltage exceeds that o~ the Paschen curve values for the given gas in question. Paschen curves may be determined by re~erence to works such as Ku~el, E. et al, "The Sparking Voltage - Paschen's Law", pp. 354- 361 in High Voltage Engineering Flln~m~ntals, Pergamon Press, Ox~ord, 1984.
Paschen's law states that the m~;mllm voltage V attainable without avalanche breakdown is a ~unction only o~ the product of gas pressure p and gap spacing d; namely V=~(pd). Thus, it is desirable to make the inter-electrode gap 3 (Figure lA) as small as possible to prevent gaseous breakdown. However, this must be balanced against the ~act that a reduction in the inter-electrode gap 3 also reduces the m~;mnm displacement o~ microelectrodes 6, which may limit the use~ulness o~ the device. Certain types o~
gases, in particular electronegative gases such as sulphur hexa~luoride, exhibit a substantially higher resistance to avalanche breakdown than air and may provide a useful means o~ increasing dielectric strength.
The third primary mode o~ electrical breakdown is 9 5 ~ield emission. Field emission is the tunnelling of electrons through the potential barrier at a surface which in turn leads to a number of breakdown mechanisms. In theory, the potential barrier is too great to allow sub-stantial tunnelling until ~ields o~ the order 3000 MV/m are 10 reached. However, in practice, substantial field emission can begin to occur at nominal electric fields up to two orders o~ magnitude lower than this (i.e. 30 MV/m). It appears that the weakness is due to the large number o~
microprotrusions which are inherent in the sur~ace rough-15 ness of even highly polished sur~aces. These microprotru-sions can increase the local electric field by two orders of magnitude and thus lead to a field emission breakdown.
Therefore, in order to prevent ~ield emission, one must use a means ~or m;n;m;zing surface roughness. There is also 20 evidence suggesting that the inter-electrode spacing (which a~ects the total voltage applied across the gap) can also play a role, in addition to the magnitude o~ the electric ~ield (see for example A. Kojima et al, "E~ect o~ Gap Length on Ef~ective Field Strength", Proc. 3rd Intl. Con~.
25 on Properties and Applications o~ Dielectric Materials, July 8-12, 1991, Tokyo, Japan). This ~urther suggests that the inter-electrode gap should be made as small as practi-cal.
Overall, the breakdown mechanism which is the weak 30 link will depend on a number o~ ~actors such as the sur~ace path length, inter-electrode gap, dielectric gas type, electrode sur~ace, etc. For example, i~ one were to operate the device described above in a high vacuum envi-ronment, the gaseous breakdown mechanism would be substan-35 tially eliminated and there would only be sur~ace discharge and ~ield emission to contend with. As a general rule o~
thumb, it is desirable to make the inter-electrode spacing less than 2 times the Paschen m;n;mllm distance ~or the gas and gas pressure in question. This will generally ensure substantial electrostatic ~orce is obtainable without gaseous breakdown or the need ~or excessively high operat-ing voltages.
The method by which microelectrodes 6 are selectively deposited atop ridges 5 will now be described. As des-cribed above, it is desirable to selectively deposit microelectrodes 6 on only certain parts o~ ridges 5, in a manner which is inexpensive on a large production scale.
One such method is to use the directional nature o~ physi-cal vapour deposited atoms in combination with the micro-structure o~ the elastomer to produce a microshadowing e~ect. Microshadowing techniques have been used elsewhere in the art, for example in the devices described by Bobbio et al. in "Integrated Force Arrays," Proc. 1993 IEEE MEMS
Workshop, p. 150.
Re~erring to Figure 2A, microshadowing can be achieved by projecting metal atoms in a direction perpendicular to ridges 5 at an angle ~ which is su~icient to cause the degree o~ shadowing desired. In Figure 2A a projection angle ~ o~ 45~ is shown. This provides a relatively long sur~ace breakdown path length, while producing a smooth transition to the electric ~ield near the tip o~ ridge 5.
Smaller angles would con~ine the metal to a smaller region atop ridges 5, but the edges o~ such smaller regions could produce very high electric ~ields which might be a source o~ electrical breakdown. Figure 2B is a sc~nn; ng electron micrograph taken at an oblique angle to the microstructured sur~ace o~ a device constructed in accordance with the pre~erred embodiment described above. In this micrograph, the light shaded regions 32 represent the tantalum metal coating, and the dark regions 33 represent the silicone elastomer.
3S In some cases it may be desirable to utilize two microstructured sur~aces which are ~acing one another, and are in mutual contact. A small exemplary portion o~ one -such embodiment is shown in Figure 3. The lower part of Figure 3 depicts an elastomeric microstructured substrate 4 bearing a first plurality of elastomeric ridges 5, each one of which is capped by a first microelectrode 6 as ~ 5 described above with reference to Figure lA. The upper part of Figure 3 depicts a second elastomeric microstruc-tured substrate 12 to which a second plurality of micro-electrodes 14 are attached, such that each microelectrode 14 faces a corresponding plurality of microelectrodes 6.
The scale of Figure 3 is distorted; in practice, the depth of the upper elastomeric microstructured substrate 12 is very much larger than the depth of the lower elastomeric microstructured substrate 4.
A series of elastomeric ridges 16 protrude downwardly from upper microstructured substrate 12 to contact lower microstructured substrate 4 at regular intervals, thus defining an interelectrode gap spacing 18 between micro-electrodes 6, 14. A gas, such as air, fills the space 20 enclosed by the two microstructured substrates. An adhes-ive bond is preferably applied at each point of contact 22between the two microstructures. Microelectrodes 14 are connected to one terminal of a voltage source, and the facing microelectrodes 6 are connected to the other ter-minal. The upper microstructured substrate 12 is recessed at regular intervals to provide a plurality of gas reser-voirs 24 for the purpose explained below.
Operation of the Figure 3 embodiment is as follows: a potential difference is applied between the two sets of microelectrodes 6, 14 generating an electrostatic force of attraction between them. This electrostatic force of attraction deforms elastomeric ridges 16, allowing the two sets of microelectrodes to move relative to one another.
As the microelectrodes move, the gas confined within space 20 is compressed between the upper and lower microstruc-tures. The gas compression is greater between microelec-trodes 6, 14 than within reservoirs 24, so the gas tends to be forced into and out o~ reservoirs 24. Thus, the overall gas compression is less than it would be if reservoirs 24 were not provided. Reservoirs 24 accordingly reduce undesirable impedance to the relative motion of the two microstructures due to the compressive stiffness of the gas within space 20; and, they avoid the need to construct the lower microstructure with a high aspect ratio, which is difficult to do.
Gas flow into and out of reservoirs 24 introduces viscous damping which is undesirable in many circumstances.
To minimize viscous damping, the flow speed of the fluid moving into and out of reservoirs 24 should be m;n;m; zed.
This can be achieved, for example, by spacing reservoirs 24 more closely so that less fluid volume needs to be moved;
or, by increasing the cross-sectional area to reduce the average fluid flow speed. Referring again to Figure 2A, the added cross-sectional area associated with recessed region "r" is useful to enable this second approach, in addition to its use for the other previously mentioned functions of increasing surface breakdown path length and enabling microshadowing of microelectrodes 6.
Figure 4 depicts an alternative to the Figure 3 device, which eliminates the need for the upper micro-structure. As seen in Figure 4, one or more macroelec-trodes 32 (being planar structures having ~;m~n.qions on the order of~ millimetres) are supported above microelectrodes 6 on elastomeric ridges 16 which protrude upwardly from substrate 4. Gas reservoirs 24 are created by removing selected portions of substrate 4 and elastomeric ridges 5.
In operation, a potential difference is applied between microelectrodes 6 and macroelectrode(s) 32, generating an electrostatic force of attraction between them. This electrostatic force of attraction deforms elastomeric ridges 16, allowing the microelectrodes and macroelec-trode(s) to move relative to one another. During such movement, the gas confined within space 20 is compressed between the macroelectrode(s) and substrate 4.
Figures 5A and 5B depict a further alternative embodi-ment in which one or more macroelectrodes 30 are applied to the base of substrate 4. In operation, a potential differ-ence is applied between microelectrodes 6 and macroelec-trode(s) 30, generating an electrostatic force of attrac-tion between them. This electrostatic force of attraction deforms elastomeric ridges 5, allowing microelectrodes 6 to move relative to macroelectrode(s) 30 as seen in Figure 5B.
Figure 6 depicts a still further alternative embodi-ment in which microelectrodes 6, 6' are applied to bothsides of substrate 4. It will be noted that this provides upper and lower structures (symmetrical about the plane of substrate 4), each of which functions in the m~nn~r des-cribed above with respect to Figures lA-lD. Such a double-sided structure could be useful, for example, in improvingconvention heat transfer through a membrane.
AS will be apparent to those skilled in the art in the light of the foregoing disclosure, many alterations and modifications are possible in the practice of this inven-tion without departing from the spirit or scope thereof.Accordingly, the scope of the invention is-to be construed in accordance with the substance defined by the following claims.
Although electrostatic actuation mechanisms have the desirable ~eatures noted above, there are certain instances where e~iciency is not so crucial, and in which it may be more advantageous to employ magnetic actuation. One advantage o~ magnetic actuation is the ability to achieve ~orces which act over a longer distance, since the ~orce decreases only linearly with microelectrode separation, as opposed to quadratically in the case of electrostatic ~orces ~or a ~ixed current and potential respectively.
Also, lower voltages can typically be employed in magneti-cally driven actuators since their per~ormance is indepen-dent o~ applied voltage, and depends only on current ~low.
Even i~ e~iciency is not o~ great concern, it is necessary to pay close attention to the dissipation o~ heat produced by the resistive power consumption o~ the microelectrodes carrying the actuating currents.
The ~ield of MEMS appears to have arisen ~rom two ~actors: curiosity to explore the limits of miniaturization o~ electromechanical devices (see ~or example Feynman, R., 1993, ~In~initesimal Ma~h;n~ry," J. MEMS, Vol. 2, No. 1,) and the widespread availability of micromach;n;ng equipment used in the manu~acture of integrated circuits. Micromach-ining techniques are now quite advanced, especially withthe recent addition o~ techniques such as LIGA, silicon ~usion bonding, etc.; and allow ~or the construction o~ a wide range o~ devices. But, these micromach;n;ng tech-niques are inherently expensive per unit area, even on large volume production scales, so it appears that they may always be con~ined to applications which have a very high value per unit area o~ micromachined sur~ace.
Another limitation o~ current MEMS technology is that ~ the means ~or allowing relative motion between the elec-trodes is provided by mechanical linkages, or the bending o~ thin, highly cantilevered structures. For example, in the device described in the Bobbio et al. paper re~erenced above, the spacing between the support points which define each "cell" in the array must be reasonably large relative to the thickness of the polyamide/metal structure, due to the relatively high elastic modulus of these materials. In addition to making the design and construction o~ such devices quite complex, these relatively thin structures are quite ~ragile and are therefore not well suited for uses where durability is of concern. These and other disadvan-tages of prior art MEMS technology can be overcome through the use of a new type of MEMS technology called elastomeric microelectromechanical systems ("EMEMS"), as described below.
Summary of the Invention It is an object of this invention to provide a micro-electromechanical device in which microelectrodes supported on an elastomeric microstructure undergo substantial relative motion in response to electrostatic forces.
Another object of the invention is to provide a microelectromechanical transducer which can be constructed inexpensively using microstructured surfaces of molded elastomeric films.
A further object of the invention is to employ a useful range of inter-electrode spacing between oppositely charged microelectrodes in EMEMS; namely less than 2 times the Paschen m; n;mllm distance for the gas and gas pressure in question.
Yet another object of the invention is to provide a means of increasing the path length over solid surfaces in mutual contact with oppositely charged microelectrodes, while simultaneously providing a means for patterning said microelectrodes and extending the flow path region.
It is yet a further object of the invention to provide a means of creating more complex structures by using facing microstructured surfaces.
These and other objects are attained by providing a microelectromechanical transducer in which microelectrodes are selectively deposited on a microstructured sur~ace.
The microelectrodes are selectively connected to a means for energizing them, such that electrostatic ~orces can be generated between any two oppositely charged microelec-trodes, or between a microelectrode and a closely proximatemacroelectrode.
The microstructures are pre~erably constructed using a low elastic modulus material having a high elastic strain limit, such materials typically being re~erred to as elastomers. This, combined with appropriate microstruc-tural design and location o~ the microelectrodes, allows the electrostatic ~orces to cause substantial relative motion between the oppositely charged microelectrodes, or between a microelectrode and a closely proximate macro-electrode. This EMEMS design technique may o~er speci~ic per~ormance advantages over conventional MEMS devices, such as improved durability. But, the most important advantage is expected to be greatly reduced manu~acturing cost per unit area.
Fabrication o~ the microstructures with low modulus, high elasticity, elastomeric materials allows the micro-structures to have a relatively low aspect ratio, yet still be highly ~lexible. By contrast, high modulus silicon microstructures used in conventional MEMS devices require a relatively high aspect ratio in order to be substantially ~lexible. The use o~ low aspect ratios ~acilitates use o~
two key manu~acturing techniques. First, the microstruc-tures may be designed in the ~orm o~ moldable sur~ace structures on a ~ilm-like elastomer sheet material.
Second, a mold may be micromachined ~or use in microrepli-cating structured sur~ace elastomer ~ilms, using known ~ large-scale microma~h;n;ng techniques such as diamond ma~h; n; ng Microreplication on film sur~aces to produce - the microstructures dramatically reduces the cost o~
production compared to conventional micromach; n; ng Finally, using appropriate structural design and physical vapour deposition techniques, one may selectively deposit CA 022l8876 l997-l0-22 the microelectrodes without resorting to the expensive masking procedures commonly used in ~abricating conven-tional MEMS devices. All o~ these ~eatures com~bine to allow EMEMS devices to be produced inexpensively using known mass production techniques.
Brie~ Description o~ the Drawinqs Figure lA is a greatly magni~ied, ~ragmented cross-sectional perspective illustration o~ a pre~erred embodi-ment o~ the invention.
Figure lB is a ~ragmented cross-sectional elevation of the structure depicted in Figure lA, showing one position o~ the microelectrodes when in a state o~ excitation caused by the application o~ the labelled potentials.
Figure lC is a ~ragmented cross-sectional elevation o~
the structure depicted in Figure lA, showing a second position o~ the microelectrodes when in a second state o~
excitation caused by the application o~ the labelled poten-tials.
Figure lD depicts the structure o~ Figure lA with the addition of a connection means for making electrical contact with each individual microelectrode.
Figure lE iS a top plan view o~ the structure shown in Figure lD.
Figure 2A is a cross-sectional elevation o~ the structure depicted in Figure lA, and illustrates how microstructural design principles can be used to achieve various objects o~ the invention.
Figure 2B is a sc~nn;ng electron micrograph showing a metal coated elastomer microstructure constructed in accordance with the invention.
Figure 3 depicts a greatly magni~ied pair o~ opposed microstructured sur~aces which provide a plurality o~ gas reservoirs.
Figure 4 is similar to Figure 3, but eliminates the upper microstructure, shows placement o~ gas reservoirs in the lower microstructure and a macroelectrode elastomer-ically supported thereabove.
Figures 5A and 5B depict an embodiment having a macroelectrode beneath the embodiment of Figure 1.
Figure 6 depicts an embodiment similar to that of Figures lA-lD, in which microelectrode-bearing elastomeric microstructures are provided on both sides of a planar substrate.
Detailed DescriPtion of the Preferred Embodiment Figure lA provides a cross-sectional perspective view of a device constructed in accordance with the preferred embodiment of the invention. The device consists o~ a linear array of (typically over 1,000) evenly spaced micro-electrodes 6 individually supported atop microstructuredelastomeric ridges 5. Microstructured elastomeric ridges 5 are formed as surface features on an elastomeric sub-strate film or sheet 4.
Microstructure ridges 5 can be economically produced using high volume molding microreplication techniques as is known in the art of producing microstructured surface products such as micro-prismatic optical films. Microelec-trodes 6 can be formed using any one of a number o~ good electrically conductive materials such as pure metals (e.g.
Al, Cu, Au), metal alloys, metal oxides (e.g. indium tin oxide), superconductors, conductive polymers, shape memory alloys, or conductive elastomers.
In cases where the strain required of the conductive material is rel~tively high, it may be desirable to utilize a conductive elastomer material for the microelectrode to reduce the risk of mechanical fatigue failures which might result in breaks in the conductivity of the microelec-trodes. A preferred technique for deposition of microelec-trodes 6 atop ridges 5 is hereinafter described in more detail.
An important object of the Figure lA device is to achieve harmonic motion of microelectrodes 6 at a given CA 022l8876 l997-l0-22 ~requency ~ and as a ~unction o~ time t, in a direction substantially parallel to the plane o~ microstructured sheet 4. Such motion could be use~ul ~or a number o~ ~luid dynamic applications such as boundary layer control, where it is desirable to control microscale aspects o~ a ~luid-sur~ace interaction to a~ect macroscale ~low in a substan-tial manner. For example, this e~ect could be used to increase the level o~ ~luid mixing in a boundary layer and thereby increase its momentum exchange. Under certain electrical drive conditions the e~ect might also be use~ully employed to reduce the level o~ turbulent mixing and thereby reduce sur~ace drag on an aerodynamic body such as an aircra~t. The use o~ micromechanical devices ~or interaction with ~luid ~lows is discussed in more detail in re~erences such as Ho, Chih-Ming, "Interaction Between Fluid Dynamics And New Technology," First International Con~erence on Flow Interaction, Keynote Talk, Sept. 5-9, 1994.
The means by which the desired harmonic motion o~
microelectrodes 6 is attained will now be described with re~erence to Figures lB and lC. One o~ ~our unique elec-trical driving potential ~unctions a, b, c or d is applied to each microelectrode 6, where:
a = +V b = +V sin(2~t) c - -V d = -V sin(2~t) These ~unctions are applied in turn to adjacent microelec-trodes in a repeating m~nn~r as shown in Figure lB. Elec-trostatic ~orces generated by this sequence o~ driving potentials causes motion o~ microelectrodes 6 via de~or-mation o~ their supporting microstructured elastomeric ridges 5 in the ~ollowing m~nner~ At time t=O, microelec-trodes 6 are in the unde~ormed state shown in Figure lA.
At t=1/(4~), microelectrodes 6 are in a state o~ m~;m~lm de~ormation as shown in Figure lB. At t=1/(2~), microelec-trodes 6 will pass through the unde~ormed state shown inFigure lA. Finally, at t=3/(4~), microelectrodes 6 will be at the opposite state o~ m~; mllm de~ormation shown in g Figure lC. This pattern o~ motion is repeated at the frequency ~ and thereby achieves the desired operation. It will thus be understood that the applied electrical poten-tial alternately induces ~orces o~ attraction between adjacent pairs of microelectrodes 6, causing controlled, time-varying displacement o~ the microelectrodes.
Pre~erably, each o~ microelectrodes 6 has an individ-ual cross-sectional area less than 0.01 mm2; and, the displacement exceeds one percent o~ the square root o~ such cross-sectional area.
An edge connecting strip 10 can be used to electri-cally connect microelectrodes 6 to an appropriate power supply 11, as shown in Figures lD and lE. Connecting strip consists o~ a number o~ protruding microstructured ridges 8 which separate and support inverted "U" shaped electrical contacts 9. Ridges 8 are geometrically con-~igured ~or simultaneous insertion between microstructured elastomeric ridges 5. The geometry is made such that the clearance between the interleaving series o~ ridges 5, 8 is suf~icient to allow relatively easy insertion, yet still provide good electrical contact between contacts 9 and the adjacent sur~aces o~ the respective microelectrodes 6.
Each one o~ inverted "U" shaped electrical contacts 9 ~orms part o~ an electrically conductive path which carries the appropriate drive signal (i.e. a, b, c, or d) ~rom power supply 11. This can easily be achieved by applying a micropatterned wiring scheme to connecting strip lO using well known integrated circuit ~abrication technology such as photolithography. Since microelectrodes 6 and contacts 9 are in intimate contact, a good electrical connection can be achieved, possibly with the assistance o~ a conductive viscous material such as gel applied to one o~ the sur~aces prior to interleaving them as a~oresaid. A suitably high electric ~ield strength dielectric material such as polyi-mide is used to ~orm the bulk o~ each ridge 8 and toelectrically isolate the adjacent conduction paths.
CA 022l8876 l997-l0-22 The maximum electrostatic force which can be generated between microelectrodes 6 is limited by electrical break-down between adjacent electrodes. Although the inventors do not wish to be bound by any particular theories, it seems likely that there are in general three primary modes o~ electrical breakdown in an EMEMS device like that described above.
The ~irst primary mode o~ electrical breakdown is sur-~ace discharge across the elastomer sur~ace between micro-electrodes 6 and/or the planar electrode. A number o~mechanisms such as carbonization can cause sur~ace dis-charge across otherwise non-conducting sur~aces. In most cases, the probability o~ sur~ace discharge increases with increasing voltage per unit path length. Thus, it is desirable to make the path length as long as possible.
This is achieved in the structure o~ the pre~erred e-m-bodi ment by virtue o~ the long path length "S" (Figure 2A) required to traverse the recesses between microelectrodes 6 atop elastomeric ridges 5 (See Figure 2A).
The second primary mode o~ electrical breakdown is avalanche breakdown o~ the gas within the inter-electrode gaps. Avalanche breakdown o~ the gas occurs when the voltage exceeds that o~ the Paschen curve values for the given gas in question. Paschen curves may be determined by re~erence to works such as Ku~el, E. et al, "The Sparking Voltage - Paschen's Law", pp. 354- 361 in High Voltage Engineering Flln~m~ntals, Pergamon Press, Ox~ord, 1984.
Paschen's law states that the m~;mllm voltage V attainable without avalanche breakdown is a ~unction only o~ the product of gas pressure p and gap spacing d; namely V=~(pd). Thus, it is desirable to make the inter-electrode gap 3 (Figure lA) as small as possible to prevent gaseous breakdown. However, this must be balanced against the ~act that a reduction in the inter-electrode gap 3 also reduces the m~;mnm displacement o~ microelectrodes 6, which may limit the use~ulness o~ the device. Certain types o~
gases, in particular electronegative gases such as sulphur hexa~luoride, exhibit a substantially higher resistance to avalanche breakdown than air and may provide a useful means o~ increasing dielectric strength.
The third primary mode o~ electrical breakdown is 9 5 ~ield emission. Field emission is the tunnelling of electrons through the potential barrier at a surface which in turn leads to a number of breakdown mechanisms. In theory, the potential barrier is too great to allow sub-stantial tunnelling until ~ields o~ the order 3000 MV/m are 10 reached. However, in practice, substantial field emission can begin to occur at nominal electric fields up to two orders o~ magnitude lower than this (i.e. 30 MV/m). It appears that the weakness is due to the large number o~
microprotrusions which are inherent in the sur~ace rough-15 ness of even highly polished sur~aces. These microprotru-sions can increase the local electric field by two orders of magnitude and thus lead to a field emission breakdown.
Therefore, in order to prevent ~ield emission, one must use a means ~or m;n;m;zing surface roughness. There is also 20 evidence suggesting that the inter-electrode spacing (which a~ects the total voltage applied across the gap) can also play a role, in addition to the magnitude o~ the electric ~ield (see for example A. Kojima et al, "E~ect o~ Gap Length on Ef~ective Field Strength", Proc. 3rd Intl. Con~.
25 on Properties and Applications o~ Dielectric Materials, July 8-12, 1991, Tokyo, Japan). This ~urther suggests that the inter-electrode gap should be made as small as practi-cal.
Overall, the breakdown mechanism which is the weak 30 link will depend on a number o~ ~actors such as the sur~ace path length, inter-electrode gap, dielectric gas type, electrode sur~ace, etc. For example, i~ one were to operate the device described above in a high vacuum envi-ronment, the gaseous breakdown mechanism would be substan-35 tially eliminated and there would only be sur~ace discharge and ~ield emission to contend with. As a general rule o~
thumb, it is desirable to make the inter-electrode spacing less than 2 times the Paschen m;n;mllm distance ~or the gas and gas pressure in question. This will generally ensure substantial electrostatic ~orce is obtainable without gaseous breakdown or the need ~or excessively high operat-ing voltages.
The method by which microelectrodes 6 are selectively deposited atop ridges 5 will now be described. As des-cribed above, it is desirable to selectively deposit microelectrodes 6 on only certain parts o~ ridges 5, in a manner which is inexpensive on a large production scale.
One such method is to use the directional nature o~ physi-cal vapour deposited atoms in combination with the micro-structure o~ the elastomer to produce a microshadowing e~ect. Microshadowing techniques have been used elsewhere in the art, for example in the devices described by Bobbio et al. in "Integrated Force Arrays," Proc. 1993 IEEE MEMS
Workshop, p. 150.
Re~erring to Figure 2A, microshadowing can be achieved by projecting metal atoms in a direction perpendicular to ridges 5 at an angle ~ which is su~icient to cause the degree o~ shadowing desired. In Figure 2A a projection angle ~ o~ 45~ is shown. This provides a relatively long sur~ace breakdown path length, while producing a smooth transition to the electric ~ield near the tip o~ ridge 5.
Smaller angles would con~ine the metal to a smaller region atop ridges 5, but the edges o~ such smaller regions could produce very high electric ~ields which might be a source o~ electrical breakdown. Figure 2B is a sc~nn; ng electron micrograph taken at an oblique angle to the microstructured sur~ace o~ a device constructed in accordance with the pre~erred embodiment described above. In this micrograph, the light shaded regions 32 represent the tantalum metal coating, and the dark regions 33 represent the silicone elastomer.
3S In some cases it may be desirable to utilize two microstructured sur~aces which are ~acing one another, and are in mutual contact. A small exemplary portion o~ one -such embodiment is shown in Figure 3. The lower part of Figure 3 depicts an elastomeric microstructured substrate 4 bearing a first plurality of elastomeric ridges 5, each one of which is capped by a first microelectrode 6 as ~ 5 described above with reference to Figure lA. The upper part of Figure 3 depicts a second elastomeric microstruc-tured substrate 12 to which a second plurality of micro-electrodes 14 are attached, such that each microelectrode 14 faces a corresponding plurality of microelectrodes 6.
The scale of Figure 3 is distorted; in practice, the depth of the upper elastomeric microstructured substrate 12 is very much larger than the depth of the lower elastomeric microstructured substrate 4.
A series of elastomeric ridges 16 protrude downwardly from upper microstructured substrate 12 to contact lower microstructured substrate 4 at regular intervals, thus defining an interelectrode gap spacing 18 between micro-electrodes 6, 14. A gas, such as air, fills the space 20 enclosed by the two microstructured substrates. An adhes-ive bond is preferably applied at each point of contact 22between the two microstructures. Microelectrodes 14 are connected to one terminal of a voltage source, and the facing microelectrodes 6 are connected to the other ter-minal. The upper microstructured substrate 12 is recessed at regular intervals to provide a plurality of gas reser-voirs 24 for the purpose explained below.
Operation of the Figure 3 embodiment is as follows: a potential difference is applied between the two sets of microelectrodes 6, 14 generating an electrostatic force of attraction between them. This electrostatic force of attraction deforms elastomeric ridges 16, allowing the two sets of microelectrodes to move relative to one another.
As the microelectrodes move, the gas confined within space 20 is compressed between the upper and lower microstruc-tures. The gas compression is greater between microelec-trodes 6, 14 than within reservoirs 24, so the gas tends to be forced into and out o~ reservoirs 24. Thus, the overall gas compression is less than it would be if reservoirs 24 were not provided. Reservoirs 24 accordingly reduce undesirable impedance to the relative motion of the two microstructures due to the compressive stiffness of the gas within space 20; and, they avoid the need to construct the lower microstructure with a high aspect ratio, which is difficult to do.
Gas flow into and out of reservoirs 24 introduces viscous damping which is undesirable in many circumstances.
To minimize viscous damping, the flow speed of the fluid moving into and out of reservoirs 24 should be m;n;m; zed.
This can be achieved, for example, by spacing reservoirs 24 more closely so that less fluid volume needs to be moved;
or, by increasing the cross-sectional area to reduce the average fluid flow speed. Referring again to Figure 2A, the added cross-sectional area associated with recessed region "r" is useful to enable this second approach, in addition to its use for the other previously mentioned functions of increasing surface breakdown path length and enabling microshadowing of microelectrodes 6.
Figure 4 depicts an alternative to the Figure 3 device, which eliminates the need for the upper micro-structure. As seen in Figure 4, one or more macroelec-trodes 32 (being planar structures having ~;m~n.qions on the order of~ millimetres) are supported above microelectrodes 6 on elastomeric ridges 16 which protrude upwardly from substrate 4. Gas reservoirs 24 are created by removing selected portions of substrate 4 and elastomeric ridges 5.
In operation, a potential difference is applied between microelectrodes 6 and macroelectrode(s) 32, generating an electrostatic force of attraction between them. This electrostatic force of attraction deforms elastomeric ridges 16, allowing the microelectrodes and macroelec-trode(s) to move relative to one another. During such movement, the gas confined within space 20 is compressed between the macroelectrode(s) and substrate 4.
Figures 5A and 5B depict a further alternative embodi-ment in which one or more macroelectrodes 30 are applied to the base of substrate 4. In operation, a potential differ-ence is applied between microelectrodes 6 and macroelec-trode(s) 30, generating an electrostatic force of attrac-tion between them. This electrostatic force of attraction deforms elastomeric ridges 5, allowing microelectrodes 6 to move relative to macroelectrode(s) 30 as seen in Figure 5B.
Figure 6 depicts a still further alternative embodi-ment in which microelectrodes 6, 6' are applied to bothsides of substrate 4. It will be noted that this provides upper and lower structures (symmetrical about the plane of substrate 4), each of which functions in the m~nn~r des-cribed above with respect to Figures lA-lD. Such a double-sided structure could be useful, for example, in improvingconvention heat transfer through a membrane.
AS will be apparent to those skilled in the art in the light of the foregoing disclosure, many alterations and modifications are possible in the practice of this inven-tion without departing from the spirit or scope thereof.Accordingly, the scope of the invention is-to be construed in accordance with the substance defined by the following claims.
Claims (17)
1. An electromechanical transducer characterized by:
(a) a first substrate (4) bearing a first plurality of elastomeric microstructures (5) on one side of said substrate;
(b) a first microelectrode (6) on each one of said first plurality of microstructures; and, (c) power supply (11) means electrically connected to said microelectrodes for controlled application of an electrical potential to said microelectrodes.
(a) a first substrate (4) bearing a first plurality of elastomeric microstructures (5) on one side of said substrate;
(b) a first microelectrode (6) on each one of said first plurality of microstructures; and, (c) power supply (11) means electrically connected to said microelectrodes for controlled application of an electrical potential to said microelectrodes.
2. An electromechanical transducer as defined in Claim 1, wherein said electrical potential alternately induces forces of attraction between adjacent pairs of said microelectrodes, causing controlled, time-varying displacement of said microelectrodes.
3. An electromechanical transducer as defined in Claim 1, further comprising one or more macroelectrodes (32) on an opposed side of said substrate, wherein:
(a) said power supply means is further electrically connected to said one or more macroelectrodes;
and, (b) said electrical potential alternately induces forces of attraction between said microelectrodes and said one or more macroelectrodes, causing controlled, time-varying displacement of said microelectrodes relative to said one or more macroelectrodes.
(a) said power supply means is further electrically connected to said one or more macroelectrodes;
and, (b) said electrical potential alternately induces forces of attraction between said microelectrodes and said one or more macroelectrodes, causing controlled, time-varying displacement of said microelectrodes relative to said one or more macroelectrodes.
4. An electromechanical transducer as defined in Claim 1, further comprising one or more macroelectrodes elastomerically supported above said microelectrodes, wherein:
(a) said power supply means is further electrically connected to said one or more macroelectrodes;
and, (b) said electrical potential alternately induces forces of attraction between said microelectrodes and said one or more macroelectrodes, causing controlled, time-varying displacement of said microelectrodes relative to said one or more macroelectrodes.
(a) said power supply means is further electrically connected to said one or more macroelectrodes;
and, (b) said electrical potential alternately induces forces of attraction between said microelectrodes and said one or more macroelectrodes, causing controlled, time-varying displacement of said microelectrodes relative to said one or more macroelectrodes.
5. An electromechanical transducer as defined in Claim 1, wherein said first plurality exceeds 1,000.
6. An electromechanical transducer as defined in Claim 1, wherein:
(a) said first substrate is an elastomeric sheet material; and, (b) said microstructures are formed as integral surface features of said sheet material.
(a) said first substrate is an elastomeric sheet material; and, (b) said microstructures are formed as integral surface features of said sheet material.
7. An electromechanical transducer as defined in Claim 1, further comprising:
(a) a second substrate (12) bearing a second plurality of elastomeric microstructures (16), said second substrate adjacent to and facing said first substrate, with said second plurality of elastomeric microstructures contacting said first substrate; and, (b) a second plurality of microelectrodes (14) on said second substrate;
wherein said power supply means is further electrically connected to said second microelectrodes for controlled application of said electrical potential to said second microelectrodes to alternately induce forces of attraction between said first and second pluralities of microelectrodes, causing controlled, time-varying displacement of said first and second pluralities of microelectrodes.
(a) a second substrate (12) bearing a second plurality of elastomeric microstructures (16), said second substrate adjacent to and facing said first substrate, with said second plurality of elastomeric microstructures contacting said first substrate; and, (b) a second plurality of microelectrodes (14) on said second substrate;
wherein said power supply means is further electrically connected to said second microelectrodes for controlled application of said electrical potential to said second microelectrodes to alternately induce forces of attraction between said first and second pluralities of microelectrodes, causing controlled, time-varying displacement of said first and second pluralities of microelectrodes.
8. An electromechanical transducer as defined in Claim 1, further comprising:
(a) a second substrate (12) bearing a second plurality of elastomeric microstructures (16), said second substrate adjacent to and facing said first substrate, with said second plurality of elastomeric microstructures contacting said first substrate; and, (b) one or more macroelectrodes (32) supported above said microelectrodes by said second plurality of elastomeric microstructures;
wherein said power supply means is further electrically connected to said one or more macroelectrodes for controlled application of said electrical potential to said one or more macroelectrodes to alternately induce forces of attraction between said microelectrodes and said one or more macroelectrodes, causing controlled, time-varying displacement of said microelectrodes relative to said one or more macroelectrodes.
(a) a second substrate (12) bearing a second plurality of elastomeric microstructures (16), said second substrate adjacent to and facing said first substrate, with said second plurality of elastomeric microstructures contacting said first substrate; and, (b) one or more macroelectrodes (32) supported above said microelectrodes by said second plurality of elastomeric microstructures;
wherein said power supply means is further electrically connected to said one or more macroelectrodes for controlled application of said electrical potential to said one or more macroelectrodes to alternately induce forces of attraction between said microelectrodes and said one or more macroelectrodes, causing controlled, time-varying displacement of said microelectrodes relative to said one or more macroelectrodes.
9. An electromechanical transducer as defined in Claim 1, wherein:
(a) adjacent pairs of said first microelectrodes are separated by a gas-filled gap (3), said gas characterized by a Paschen minimum distance "d"
at a particular gas pressure; and, (b) said gap width is less than twice said Paschen minimum distance "d".
(a) adjacent pairs of said first microelectrodes are separated by a gas-filled gap (3), said gas characterized by a Paschen minimum distance "d"
at a particular gas pressure; and, (b) said gap width is less than twice said Paschen minimum distance "d".
10. An electromechanical transducer as defined in Claim 1, wherein said first microelectrodes comprise an electrically conductive elastomer.
11. An electromechanical transducer as defined in Claim 1, wherein said microstructures are geometrically configured for directional deposition of electrically conductive material on said microstructures to form said microelectrodes as a predetermined micro-pattern of surface deposits on said microstructures.
12. An electromechanical transducer as defined in Claim 1, further comprising a recess between each adjacent pair of said first plurality of said microstructures, each of said recesses defining a surface path length between said first microelectrodes on said adjacent microstructures, said surface path length substantially exceeding any direct path distance between said first microelectrodes on said adjacent microstructures.
13. An electromechanical transducer as defined in Claim 7, further comprising a plurality of gas flow reservoirs (24) in said second substrate for gas flow from between said microelectrodes into and out of said reservoirs during said displacement of said microelectrodes.
14. An electromechanical transducer as defined in Claim 4, further comprising a plurality of gas flow reservoirs (24) in said first substrate for gas flow from between said microelectrodes into and out of said reservoirs during said displacement of said microelectrodes.
15. An electromechanical transducer as defined in Claim 1, wherein said microelectrodes have individual cross-sectional area less than 0.01 mm2.
16. An electromechanical transducer as defined in Claim 2, wherein said microelectrodes have individual cross-sectional area less than 0.01 mm2 and said displacement exceeds one percent of the square root of said cross-sectional area.
17. An electromechanical transducer as defined in Claim 1, further comprising:
(a) a second plurality of elastomeric microstructures (5') on an opposed side of said substrate; and, (b) a second microelectrode (6') on each one of said second plurality of microstructures;
wherein said power supply means is further electrically connected to said second microelectrodes for controlled application of an electrical potential to said second microelectrodes.
(a) a second plurality of elastomeric microstructures (5') on an opposed side of said substrate; and, (b) a second microelectrode (6') on each one of said second plurality of microstructures;
wherein said power supply means is further electrically connected to said second microelectrodes for controlled application of an electrical potential to said second microelectrodes.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/431,735 US5642015A (en) | 1993-07-14 | 1995-05-01 | Elastomeric micro electro mechanical systems |
| US08/431,735 | 1995-05-01 | ||
| PCT/CA1996/000268 WO1996034701A1 (en) | 1995-05-01 | 1996-04-26 | Elastomeric micro electromechanical systems |
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| CA2218876A1 CA2218876A1 (en) | 1996-11-07 |
| CA2218876C true CA2218876C (en) | 1999-12-07 |
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| CA002218876A Expired - Fee Related CA2218876C (en) | 1995-05-01 | 1996-04-26 | Elastomeric micro electro mechanical systems |
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|---|---|
| US (1) | US5642015A (en) |
| EP (1) | EP0824381B1 (en) |
| JP (1) | JP3016870B2 (en) |
| KR (1) | KR100286486B1 (en) |
| CN (1) | CN1047107C (en) |
| AU (1) | AU5394596A (en) |
| CA (1) | CA2218876C (en) |
| DE (1) | DE69609414T2 (en) |
| WO (1) | WO1996034701A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3772537A (en) * | 1972-10-27 | 1973-11-13 | Trw Inc | Electrostatically actuated device |
| US4376302A (en) * | 1978-04-13 | 1983-03-08 | The United States Of America As Represented By The Secretary Of The Navy | Piezoelectric polymer hydrophone |
| US4654546A (en) * | 1984-11-20 | 1987-03-31 | Kari Kirjavainen | Electromechanical film and procedure for manufacturing same |
| CA1277415C (en) * | 1986-04-11 | 1990-12-04 | Lorne A. Whitehead | Elastomer membrane enhanced electrostatic transducer |
| US4887248A (en) * | 1988-07-07 | 1989-12-12 | Cleveland Machine Controls, Inc. | Electrostatic transducer and method of making and using same |
| JP2797146B2 (en) * | 1990-10-09 | 1998-09-17 | 株式会社ゼクセル | Electromagnetic actuator for moving objects |
| US5206557A (en) * | 1990-11-27 | 1993-04-27 | Mcnc | Microelectromechanical transducer and fabrication method |
| US5485437A (en) * | 1993-02-05 | 1996-01-16 | Discovision Associates | Shock-resistant, electrostatically actuated pick-up for optical recording and playback |
| US5450498A (en) * | 1993-07-14 | 1995-09-12 | The University Of British Columbia | High pressure low impedance electrostatic transducer |
| US5359574A (en) * | 1993-08-27 | 1994-10-25 | The United States Of America As Represented By The Secretary Of The Navy | Electromagnetically activated compliant wavy-wall |
| US5395592A (en) * | 1993-10-04 | 1995-03-07 | Bolleman; Brent | Acoustic liquid processing device |
-
1995
- 1995-05-01 US US08/431,735 patent/US5642015A/en not_active Expired - Fee Related
-
1996
- 1996-04-26 AU AU53945/96A patent/AU5394596A/en not_active Abandoned
- 1996-04-26 CN CN96194329A patent/CN1047107C/en not_active Expired - Fee Related
- 1996-04-26 JP JP8532877A patent/JP3016870B2/en not_active Expired - Fee Related
- 1996-04-26 EP EP96910876A patent/EP0824381B1/en not_active Expired - Lifetime
- 1996-04-26 KR KR1019970707737A patent/KR100286486B1/en not_active IP Right Cessation
- 1996-04-26 WO PCT/CA1996/000268 patent/WO1996034701A1/en active IP Right Grant
- 1996-04-26 CA CA002218876A patent/CA2218876C/en not_active Expired - Fee Related
- 1996-04-26 DE DE69609414T patent/DE69609414T2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE69609414D1 (en) | 2000-08-24 |
| AU5394596A (en) | 1996-11-21 |
| KR100286486B1 (en) | 2001-04-16 |
| KR19990008212A (en) | 1999-01-25 |
| JPH10511528A (en) | 1998-11-04 |
| MX9708359A (en) | 1998-06-30 |
| WO1996034701A1 (en) | 1996-11-07 |
| US5642015A (en) | 1997-06-24 |
| DE69609414T2 (en) | 2001-03-08 |
| JP3016870B2 (en) | 2000-03-06 |
| EP0824381A1 (en) | 1998-02-25 |
| CN1047107C (en) | 1999-12-08 |
| CA2218876A1 (en) | 1996-11-07 |
| EP0824381B1 (en) | 2000-07-19 |
| CN1186458A (en) | 1998-07-01 |
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| MKLA | Lapsed |