CA2221308A1 - Multi-gigahertz frequency-modulated vertical-cavity surface emitting laser - Google Patents
Multi-gigahertz frequency-modulated vertical-cavity surface emitting laser Download PDFInfo
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- CA2221308A1 CA2221308A1 CA002221308A CA2221308A CA2221308A1 CA 2221308 A1 CA2221308 A1 CA 2221308A1 CA 002221308 A CA002221308 A CA 002221308A CA 2221308 A CA2221308 A CA 2221308A CA 2221308 A1 CA2221308 A1 CA 2221308A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
- H01S5/06216—Pulse modulation or generation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0614—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by electric field, i.e. whereby an additional electric field is used to tune the bandgap, e.g. using the Stark-effect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0658—Self-pulsating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
Abstract
A GHz-range frequency-modulated laser based on manufacturable vertical cavity surface emitting lasers (VCSELs) and arrays. The present invention exploits a saturable absorber contained within the VCSELs distributed Bragg reflector which may itself be adjusted during fabrication or in operation. Under controllable operating conditions, the saturable absorber, strategically sized and placed, will force the VCSEL to self-pulsate (in the GHz-regime) at rates related to the local intensity, absorption, lifetime, and carrier density of the saturable absorber. These conditions can be controlled in real time in one of three ways; first, by adjusting the injection current into the VCSEL itself; second, for a fixed VCSEL bias and the use of a third terminal, by modifying the carrier density within the saturable absorber via additional current injection; or third, the saturable absorber can be reverse-biased by simultaneously altering its absorption and carrier lifetime and thus carrier density. Additionally, the frequency response can be controlled in the fabrication process by affecting the location of the saturable absorber, the mirror design and cavity Q, and the laser size (and hence threshold current). One can easily multiplex numerous GHz channels into a 100 plus GHz transmitter in a cost-effective manner. Application of the saturable absorber for selfpulsation provides for a decoherence of the VCSEL light output to eliminate modal noise in data communication systems, or for use as a local oscillator in an RF or other system. A plurality of VCSELs may be formed into an array having various frequencies, intensities, phases or other properties. The VCSELs may form a phased array, for instance.
Description
Wo 96141403 PCT/US96/07752 MuLTI-GIGAt~;Kl;~ FREQUENCY-MODULATED VERTICAL-CAVITY
SURFACE EMITTING LASER
RA CKGRQUNn 5This invention relates to the field of semiconductor lasers, and particularly relates to vertical cavity surface ~mitfin~ lasers. More particularly, the invention relates to self-pulsing vertical cavity surface emittin~ lasers (VCSELs).
Conventional semiconcll~ctor lasers have found widespread use in modern technology as the light source of choice for various devices, e.g., comm~-nic~tions systems, compact disc players, and so on. The typical semiconductor laser is a double heterostructure with a narrow bandgap, high refractive index layer surrounded onopposed major surfaces by wide bandgap, low refractive index layers. The low bandgap layer is termed the "active layer", and the bandgap and refractive index differences serve to confine both charge carriers and optical energy to the active layer or region. Opposite IS ends of the active layer have mirror facets which forrn the laser cavity. The cl~ ling layers have opposite conductivity types and when current is passed through the structure, electrons and holes combine in the active layer to generate light.
Several types of surface emitting lasers have been developed. One such laser of special promise is termed a "vertical cavity surface emitting laser" (VCSEL). (See, for example, "Surface-emitting microlasers for photonic switching and in~
connections," Op~ir~l Fn~ineerin~, 29, pp. 210-214, March 1990, for a description of this laser. For other e~mr]e~ note U.S. patent 5,115,442, by Yong H. Lee et al., issued May 19, 1992, and entitled "Top ~ ,lill;ll~ surface çmit~ing laser structures," which is hereby incol~ul~Led by reference, and U.S. patent application serial number 08/175,016, by Mary K. Hibbs-Brenner, allowed, issue fee sent March 20, 1995, and entitled "Integrated laser power monitor," which is hereby inco.~oldL~d by reference. Also, see WO 96/41403 PCT/lJ~,. !IJ7 ~?
"Top-surface-emitting GaAs four-4uanlulll-well lasers emittin~ at 0.85 ,um," ~lec~onics LÇ~, 26, pp. 710-711, May 24, 1990.) The laser described has an active region with bulk or one or more LIUall~ well layers. The quantum well layers are interleaved with barrier layers. On opposite sides of the active region are mirror stacks which are formed by interleaved semiconductor layers having properties, such that each layer is typically a quarter wavelength thick at the wavelength (in the medium) of interest thereby forming the mirrors for the laser cavity. There are opposite conductivity type regions on opposite sides of the active region, and the laser is turned on and off by varying the current through the active region. However, a technique for digitally turning the laser on and off, varying the h~ ily of the emitted radiation from a vertical cavity surface emitting laser by voltage, with fixed injected current, is desirable. Such control is available with a three terminal voltage-controlled VCSEL described in U.S. patent 5,056,098, by Philip J. Anthony et al., and issued October 8, 1991, which is hereby incorporated by reference.
For several reasons, it is desirable to use surface emitting devices. For example, surface çmit~ing devices can be fabricated in arrays with relative ease while edge emi~tin~ devices can not be as easily fabricated. An array of lasers can be fabricated by growing the desired layers on a ~ul~ le and then p~ttPrning the layers to form the array. Individual lasers may be separately connPcted with apl)lop,;ate contacts. Such arrays are potentially useful in such diverse applications as, for example, image ploces~i.lg inter-chip comml~niç~fions~ i.e., optical intercormects, and so forth. Second, typical edge-el. iller lasers are turned on and offby varying the current flow through the device. This requires a relatively large change in the current through the device which WO 96/41403 PCT/US95.'17 /~ ' is undesirable; the surface smittin~ laser, described below, requires lower drive current, and thus the change of current to switch the VCSEL need not be large.
High-yield, high ~.r~ lance ~ICSELs have been d~mon~tr~t~rl and expedited in commercialization. There have been demonstrated breakthroughs in record s performance and flexibility exploiting variation of this VCSEL platform.
Top-surface-emittin~ AlGaAs-based VCSELs are producible in a manner analogous to semiconductor integrated circuits, and are amenable to low-cost high-volume m~nnf~-~t~lre and integration with existing electronics technology platforms.
Moreover, VCSEL uniformity and reproducibility have been demonstrated using a 0 standard, unmodified commercially available metal organic vapor phase epitaxy (MOVPE) chamber and molecular beam epitaxy (MBE) giving very high device yields.The flexibility of this technology was exploited for lateral mode engineering including spatially filtered hybrid semiconductor/dielectric DBR VCSELs for single-mode emission with stable wavelengths and current. At the other extreme, a "quasi-incoherent" (multi-wavelength) VCSELs have been demonstrated with properties that alleviate modal noise in multi-mode fibers to overcome mode selective loss, especially in data communication applications, or analogously noisy speckle patterns in im~ging applications.
SUMl~Y OF TE~ INV~NTION
The present invention is a controllable frequency-mo~ te-l producible, vertical cavity surface ~mittin~ laser (VCSEL) and array. The invention uses a saturable absorber (SA) contained within the VCSEL's distributed Bragg reflector (DBR), orspacer (as described in "Self-pulsations in vertical-cavity surface-~mittin~ lasers," by D.
Nugent et al., FleclTonics T ~tt~rs~ 31, pp.43-44, January 5, 1995). Under ~ ~,;ate WO 96/41403 PCT/U~, r l,7 ,5 ~
op~ildlillg conditions, the saturable absorber, strategically placed, forces the VCSEL to self-pulsate (in the GHz-regime) at rates related to the local i.,lel,sity, absorption, lifetime, and carrier density at the saturable absorber. This characteristic is exploited as a technique to frequency modulate a VCSEL. These opeldlillg conditions can be s controlled in real time by adjusting the injection current into the VCSEL itself, or by using a third tl?rrnin~l to modify the carrier density within the saturable absorber ~,vith additional current injection for a fixed VCSEL bias, or by reverse-biasing the saturable absorber thereby simultaneously altering the absorber's absorption and carrier lifetime and hence carrier density. Additionally, the center frequency of oscillation can be lo determined by the material, location and thickness of the saturable absorber, the mirror design, cavity Q and structure, and the laser si~ (and hence threshold current).
Furthermore, by e~ctf n~ling VCSELs of this type into arrays, one can easily multiplex numerous multi-GHz channels into a 100 plus GHz frequency-modulated transmitter in a cost-effective manner. Each of an array of individual VCSEL elements can have a 15 particular modulation frequency range det~nnined during fabrication and be further tuned during operation. The total operating range across the array can be increased by varying each element structure, and subsequently tuning it. VCSELs, arranged in an array, having differing sizes of ~Glt~es or other characteristics may be adjusted so as to form a phased array, with certain VCSELs turned on and others turned off, or a 20 variation of frequency to achieve a certain direction of r~ ti- n by the res-llt~nt phased array, or a phased-~ntenn~ array controller. VCSELs permit the construction of highly effective, long range phased arrays functioning at high frequencies using low power with low cost, unsophisticated electronics, in contrast to radio frequency (RF) or millim~t~r (MM) based phased arrays.
WO 96/41403 PCT/U..9~ '1,7 /:~
An additional advantage may be detl-rmin~l by self-pulsation of the VCSEL
which effectively decoheres the laser light output, wLere;l~ each individual pulse is reasonably coherent but the pulses together make the output laser light beam appear incoherent by averaging over the many pulses during the detection integration period, even though the laser beam itself may be in a coherent single transverse and lon~itl1~1in~l mode. Such decoherence can be used to reduce modal noise in a multi-moded fiber medium to overcome mode selective noise penalties. A two termin~l version of theVCSEL is suited for decoherence purposes as a fixed VCSEL bias would be used for a predetermined frequency of self pulsation. A predetermined injected current would result in VCSEL emitting light p~ tinE at a certain frequency. The output of a VCSEL
may be coupled into and conveyed by either a single mode or multi-mode medium orinto a "free-space" lensed system. A controlled frequency modulated VCSEL may also serve as a low cost, low power optical local oscillator within numerous radio-frequency (RF) systems.
RRTFF DF~CRTPTION OF T~TF DR~ G
Figure 1 is an illustration of a planar, current-guided, GaAs/AlGaAs top surface~mittinp vertical cavity laser.
Figure 2 is a scht-m~tic of a VCSEL with an absorber.
Figure 3 is a graph of pulsation frequency versus drive current for various positions of a saturable absorber in a VCSEL.
- Figure 4 is a cross-section of a three t~ormin~l frequency modulated VCSEL.
Figure 5 are graphs for various voltage-current levels or light power and self-pulsation frequency versus drive current for a three tf~.rmin7~l VCSEL.
WO 96/41403 PCT/US9~ 1~ / /S
Figure 6 is a plot of the absorption coefficient of a 4~1Lu111 well region versus the applied (reverse) voltage.
Figures 7a and 7b show waveforms of VCSEL self-pulsation and modulation.
Figure 8a is an optical field distribution of a VCSEL.
s Figure 8b shows light intensity versus position near the active region of a VCSEL.
Figure 9 is a graph of typical light power-current-voltage (L-I-V) characteristics of a state-of-the-art GaAs/AlGaAs VCSEL.
Figure l 0 shows a hybrid-DBR spatial-filtered VCSEL having a dielectric 0 mirror, with spatial filtering for single TEM00-mode control for improved performance and p ~tential fabrication advantages.
Figure l l is a diagram of a modulator and the three terminal VCSEL for providing frequency-modulated self-pulsations.
Figure l 2 reveals an array of VCSELs having various sized and/or structured 5 VCSEL apertures.
Figure l 3 is a cross section of an array of VCSELs having a Q-graded coating.
l)F.!~C}~lPTION OF T~F F.l~IROnIl\I~NTS
In figure l is a diagram of a two t~rmin~l VCSEL l 0. Formed on an n+ gallium arsenide (GaAs) substrate l4 is an n- contact l2. As indicated, substrate 14 is doped 20 with h1~ ;lies of a first type (i.e., n type). An n- mirror stack l 6 is formed on substrate l4. Formed on stack l6 is a spacer l8. Spacer l8 has a bottom confineme~t layer 20 formed on stack l6, an active region 22 formed on layer 20 and a top confinement layer 24 formed on active region 22. A p- mirror stack 26 is formed on top co~ ...ent layer 24. A p- metal layer 28 is formed on stack 26. The emission region may have a WO 96/41403 PCT/U59Gh, / /~ ~
passivation layer 30. Isolation region 29 restricts the area of the current flow 27 through the active region. Region 29 can be forrned by deep H+ ion implantation or by other known techniques.
Spacer 18 may contain ~1U2~ Ulll wells disposed between mirror stacks 16 and s 26. Stacks 16 and 26 are distributed Bragg reflector stacks. Quantum well active region 22 has alternating layers of ~ minllm gallium arsenide (AlGaAs) barrier layers and GaAs well layers. Stacks 16 and 26 have periodic layers of doped AlGaAs and alllminl-nn arsenide (AlAs). The AlGaAs of stack 16 is doped with the same type of hll~ul;ly as substrate 14 (i.e., n type), and the AlGaAs of stack 26 is doped with the o other kind of impurity (i.e., p type).
Contact layers 12 and 28 are ohmic contacts that allow ~p.~pliate electrical biasing of laser diode 10. When laser diode is forward biased with a more positive voltage on contact 28 than on contact 12, active region 22 emits light 32 which passes through stack 26.
1S There may be a saturable absorber, such as layer 25, composed of GaAs. for example, to absorb light at wavelengths (~) less than 870 nm or composed of InxGal xAs quantum wells (such as 80 angstroms in thickness and wherein x may be 0.2 as an example) to absorb light at wavelengths less than one micron. Layer 25 can be of a ~/4 order in thickness but need not be such. Layer 25 can be ~ te~1 anywhere in the stack 20 of device 10. Tn~te~d, for in~t~n~e, layer 31 may be the saturable absorber. Placement of the saturable absorber at a position in the cavity within layers 16 through 26 is n11llente~1 by the confinement factor. The saturable absorber may also be placed within spacer regions 20 or 24. For ~y~mple7 saturable absorber layer 25 is in-lie~ted to be a kth distance 90 of k one-quarter wavelengths from active region 22, as illllctriqte~l in WO 96/41403 PCT/U' ~G/'~,7 figure 2 which is a s-~h~mAfic of a portion of VCSEL 10. Active region 22 is illustrated with a thickness 94 and absorber 25 with a thicL n~cc 96. The thickness should be chosen in conjunction with the rest of the structure to m~int~in an adequate optically thick cavity. Figure 3 shows the results of pulsation frequency versus drive current for various (k) SA positions of ~14 thickness for a VCSEL of a particular design but not n~cecc~rily VCSEL 10 of figure 1. ~., D. Nugent et al. The drive current for VCSEL
10 would be applied via contacts 28 and 12. These figures are noted again below. Note that pulsation frequency may be tuned by injection current and influenced by design (i.e., absorber position).
o A three termin~l version of a vertical cavity surface emitting laser is shown in a sectional view in figure 4, in contrast to the two terminal VCSEL of figure 1. The frequency of the self pulsations of VCSEL 60 light 70 may be modulated or tuned with a drive power of varying amplitude between termin~lc 52 and 50. The saturable absorber may be situated anywhere between terminals 50 and 52. This inexpensive, low power device 60 has a very large frequency modulation bandwidth. The application of current across terminals 48 and 50 of VCSEL 60 can be constant, but tuned to give the right center self-pulsation frequency and/or light output. This configuration would result in minim~l amplitude modulation of the VCSEL 60 light 70, as opposed to a two-tt?rmin~l current-injected frequency-mocl~ te~l VCSEL.
Typically, the three t~rmin~l device 60 has a fixed constant current bt;lwt;ell t~rmin~lc 48 and 50 reslllting in a particular voltage-current (VI) (reverse or forward biased) being applied bcLw~ l those t~rmin~lC In figure 5, three levels 74, 76 and 78 of VIS0-s2 (voltage-current) across t~rmin~lc (50 and 52) are illustrated with light power and the self-pulsation frequency f5p versus the drive current through t~rrnin~lc 48 and WO 96/41403 PCT/U', ' '~,7 15 ~ _9_ 50. The drive power is used to modulate fsp. VI 7~ is greater than VI 76 which is greater than VI 74. As one can note, under these conditions for a given fsp, the drive current is less for a greater VI, as indicated by the dashed lines.
As will be appreciated by those skilled in the art, some elements which are not 5 essentiP~l to an underst~n-ling of the invention are either not depicted or described in detail. For example, only a single laser is illustrated in Figure 4, although it will be readily noted that an array of lasers typically may be present. Shown are substrate 34, regions 36 and 46 having a first conductivity type, active region 38, regions 40 and 42 having a second conductivity type, with saturable absorption region 44 having either or 10 neither conductivity type depending on design and operating conditions. Region 44 may comprise any nurnber of bulk materials or one or more quantum wells, being normally absorbing at the lasing wavelength. Regions 36, 40, 42 and 46 comprise mirrors which are depicted as interference mirrors. Region 36 comprises a first mirror.
Only several layers are shown for reasons of clarity. Appropriate regions of different 15 conductivity types will be readily selected by those skilled in the art. Regions 40, 42, 44 and 46 form a second distributed mirror with a cavity Q and hence an oscillation frequency controllable via power applied to the saturable absorber through contacts 50 and 52. The active region typically comprises one or more quantum well regions which are int~rle~ved with barrier layers, i.e., layers having a b~n(1g~r greater than the bandgap 20 of the ~u~llulll well region. However, the use of bulk semiconductors instead is not precluded. There are first, second, and third electrical contacts 48, 50, and 52, to region 36, region 40, and layer 46, rei,~e~,Livc;ly. Contact 48 may be physically made to ~ul~ dLe 34 if the substrate is con~ ctin~ and not semi-in~ ting Isolation region 54 restricts the area of the current flow through the active region to the area generally under WO 96/41403 PCT/U~,. 'l.7 region 46. Isolation region 54 can be formed by, e.g., deep ion implantation. Other forms of current and optical confinPment may be lltili7e-1 The portions of regions 36 and 40 having first and second conductivity types, form means for injecting carriers into the active region. The first and second interference mirrors further comprise a plurality s of interleaved first and second semiconductor layers with each layer having characteristics such that it is typically a quarter wavelength thick at the medium wavelength of interest thereby forming the respective interference mirror. The individual layers of the active region and the interference mirrors are not described with particularity as those skilled in the art know the skucture of these elements.
In the embodiment, subskate 34 is conducting or semi-in~ul~1ing GaAs, and regions 36, 40, 42 and 46 comprise alternating layers of AlAs and AlGaAs, as an example, with plo~t:llies as described in the previous paragraph. The active region may comprise one or multiple GaAs (or, e.g., InxGal xAs) quantum wells interleaved with AlGaAs barrier layers. Saturable absorption (SA) region 44 is optically coupled to 15 region 40, i.e., the absorption due to the SA is v.~ithin the diskibuted mirror incol~o.~ g regions 40, 42, 44 and 46. Region 46 comprises interference mirror layers of, e.g., AlAs and AlGaAs, and has a first conductivity type. Those skilled in the art will readily select a~plo~l;ate layer thi~knec~ç~ and these parameters need not be described in detail. The use of other semiconductors is contemplated and ~plol,.iate 20 choices will readily be made by those skilled in the art. For instance, other Group III-IV
semiconductors may be used.
Conventional and well-known epitaxial growth techniques, such as molecular beam epitaxy or metallo-organic chP~ni~l vapor deposition, may be used to grow the layers described. After the layers have been grown, cGllv~lllional p~ ..il.g techniques WO 96/41403 ~ PCT/U~ 7 l52 are then used to form the individual lasers in the array. Electrical contacts to the individual lasers are also fabricated. Those skilled in the art will readily select ~ a~,ol)liate p~tt~rning and cont~rting techniques.
, The frequency of oscillation of the self-pulsing light emitted from the device can s be varied by controlling the properties of the SA region within the VCSEL structure.
An embodiment may use current or voltage alteration of bulk or quantum-well material such as the quantum-confined Stark effect in quantum wells. This effect is well known and understood by those skilled in the art; the effect is described in Chapter 4 entitled "Nonlinear optical properties of semiconductor quanturn wells," by D.S. Chemla et al., lo in Optir~l Nonlin~rities ~nd Inst~hilities in Serniconductors~ pp. 339-347, (Academic Press 1988). Basically, the exciton absorption depends on the magnitude of the electric field in the quantum well. Figure 6 plots the absorption coefficient a of the L~ua~lull~
well region vertically versus the applied voltage V ho, izont~lly for a wavelength longer than that of the zero field exciton. In other words, in this figure, the absorption 5 coefficient a is plotted vertically versus the voltage V holi~onlally for an exemplary quantum-confined Stark effect region useful in the present device. For device 60, a voltage is between contacts 52 and 50, i.e., a reverse bias p-i-n junction, and an increasing voltage co~ onds to an increasing electric field and vice versa. Arbitrary units are used for purposes of exposition. The initial voltage is Vb. The absorption 20 coefficient a can be varied a significant arnount with a relatively small change in the - applied voltage. Similarly the field-dependent Franz-Keldysh effect can be used for an SA composed of bulk m~t~ri~l The use of this characteristic is noted below. Moreover, SA 44 of figure 4 may be fol~/v~d biased to inject current into it also allowing frequency tuning.
WO 96/41403 PCT/U' ,~ '0 A vertical cavity surface ~ni1ting laser needs relatively large reflectivities in both mirror stacks for lasing; typically, mirror stack reflectivities should be 99 percent or greater. The SA region functions as a bias-dependent absorber, by a~.o~liately varying the bias, the laser pulsation can be frequency modulated at different rates. A
s small voltage or current change may be used to vary the absorption or carrier density of the SA and hence the frequency of the VCSEL self-pulsation. However, the magnitude of the current supplied through contacts 48 and 50 of device 60 of figure 4, may remain essentially constant as the laser is mod~ t~-l This simplifies the design of the power supply (not shown) for the array and minimi7.oc any problems that might otherwise arise lo due to the varying heat generated in the vertical cavity laser array, due to the varying carrier density in the active region, and due to the resulting index changes in the optical cavity.
The optical spatial field distribution of the surface emitting laser and the position of the saturable absorber are both engin-oering parameters. More or less absorption can 5 be obtained by placing the absorber near a node or antinode, respectively. More or less absorption can also be obtained by increasing or decr~;a~illg the reflectivity of regions 40 and 36 of device 60, thereby coupling relatively less or more of the SA into the distributed mirror. Additionally, the material, thickness and/or design and number of the ~ u.Lu--- wells, or of bulk m~t~ri~l~, in SA 44 can be varied from that described 20 herein. Those skilled in the art will readily select app.op.;ate parameters.
The invention utilizes the saturable absorber in the optical cavity to achieve high-speed bias-controlled tuning of the self oscillation or pulsation frequency of a VCSEL or VCSEL array while ...~ ;..;..g co.~L~-~ current and hence ...i..i...i~ g chirp, relaxation oscill~tion~, and so forth. In Figure 4, t~rmin~l 50 l~ st;lll~ the top WO 96/41403 PCT/U', (usually the p type) contact and t~nin~l 48 ~rese~ the bottom contact (usually the n type) contact. The bottom contact may be a common met~li7~tion on the bottom like ~ contact 12 as shown in Figure 1. Contact 52 re~l. se~ a third connection which can be J used to either reverse bias or forward bias the saturable absorber layer which is 5 s~h~m~tically illustrated by layer 44.
The incorporation of a saturable absorber can result in self pulsations of the laser and is a common technique for "mode-locking" the laser to produce a train of laser pulses whose period is plu~o~lional to the cavity length. Figure 7a reveals the nature of a frequency-modulated self-pulsing waveforrn. Profile 62 is the frequency of the self-lo pulsations of the VCSEL with respect to time. Profile 64 is the amplitude of themo~lnl~ting waveform of the power (VI) signal sent to the VCSEL. The overall envelope 62 may of course be changed by the power (Vl) between terrninals 48 and 50 of VCSEL60. The waveform of the self-pulsations switches between Ima~ and Imjn which are light "on" and light "off" conditions, .~ectively, of the pulsation. Imjn may 5 be between zero amplitude and ImaX, depending on the electrical and physical characteristics of, and the power p~r~m~t.ors to the VCSEL, and is ideally zero.
Self pulsations up to 6 GHz have also been demonstrated in a VCSEL external cavity configuration, lltili7ing the VCSELs geometrical polarization degeneracy. This approach is also a way of producing GHz-range self-modulation whose frequency can 20 be modulated by varying the optical cavity length. "High Frequency Polarization Self-modulation in Vertical Cavity Surface Fmittin~ Lasers," by S. Jiang et al., on pp. 3545-3547 in ~pl. P~ys. T ett., Vol. 63 (1993). Selfpulsations within a long-wavelength VCSEL were theoretically analyzed using the following coupled rate equations (I~., Nugent et al.):
dP/dt= raga(na - nOa)P + rsgs(ns - nOS)P - P/Tpb + Va~Bna (l);
dna/dt = -raga(na - noa)plva + -na/~a + Ia/eVa (2); and dns/dt = -rsgS(ns - nos)P/Vs + -ns/~s + (Is/eVs) (3);
where we have added the third term in equation (3) to allow for additional modulation 5 of the SA.
In the equations, the subscripts "a" and "s" identify the active and saturable absorber, respectively; the symbol ~r~ refers to the photon confinçment factor. The third terrn Is/eVs is added in equation (3) to represent the case for current injection via contacts 50 and 52 as shown in Figure 4. In the third equation, rs and Vs are o determined or affected by material, structure and material placement; and gS~ nS, nOS, T5 and Is are changed by current-voltage (VIs0 s2) across terrninals 50 and 52, and the device consequently can be tuned.
In the three above-disclosed equations, the respective terrns mean: ra is the active region confinement factor; ga is the active region differential gain; na is the active 5 region carrier density; nOa is the active region l~ ellcy density; P is the optical power; rS is the SA confinement factor; g5 is the SA di~l~.,lial gain; ns is the SA
carrier density; nOS is the SA l~ls~llcy density; ~pb is the cavity lifetime; Va is the active region volume; ,B is the spontaneous emission factor; B is the bimolecular recombination coefficient; ~a is the active region lifetime; Ia is the active region CA 0222l308 l997-ll-l7 WO 96/41403 -15- PCT/U' ,~ 'I / /5~
injection current; e is the electron charge, Vs is the SA volurne, ~s is the SA lifetime;
and Is is the current in the SA.
Figure 3 ~r~phit ~lly represents the calculations of pulsation frequency versus drive current for long-wavelength laser parameters. I~i~. Nugent et al. The k-pararneter s represents the location of the saturable absorber, assumed to be the kth quarter wave in active spacer 18 of figure 1. The graph of figure 3 shows the self-sustained pulsation frequency in GHz of a VCSEL, versus drive current Ia in milli~mperes for various k's of the saturable absorber. Curve 66 shows the maximurn drive currents and corresponding frequencies for the respective k's for self-suct~intod pulsations. Curve 68 shows the o maximum drive currents against frequencies of darnped relaxation oscillations, detPrminPcl from small signal analyses. Points 70 reveal the minimllm drive currents for the various k~s. I12i~. D. Nugent et al. The absolute current, frequency and k depen-lP~re will vary in accordance with equations (1)-(3) for VCSEL 60.
The optical intensity of the light decreases roughly exponentially from the spacer 5 region as indicated in Figure 8a. This figure reveals the photon density distribution within the VCSEL structure. Figure 8b shows a relationship of light intensity relative to physical position in the VCSEL for a typical VCSEL with a one ~-thick cavity (a cavity having one of other multiples of ~/2 is also possible).
The curves for device 60 of Figure 3 are generated using InP/InGaAsP based 20 m~tPri~l~ near 1.55 microns. Typical light power-current-voltage (L-I-V) characteristics of state-of-the art GaAs/AlGaAs VCSELs are given in Figure 9. Figure 9 is a graph of power in milliwatts, voltage in volts and wallplug efficiency in percent versus current in milli~"~pe,es for a GaAs VCSEL having an implant ~ mPtpr (g) of 20 microns, a CA 0222l308 l997-ll-l7 WO 96/41403 PCT/U' ,. '(, window aperture (w) of 15 microns, a series rçeiet~nt~e (R) of 31 ohms or less, and a wavelength (~) of 844 nm at room te~ Jc.dlul~e (25 degrees C). Window a~.Lule 93and implant diameter 95 are illustrated in figures 1 and 10. The graph of figure 9 reveals the VCSEL to have a 1.6 volt (0.1 volt above bandgap) CW threshold voltage, a 5 3 milli~mpere threshold current and a wallplug efficiency 1l of 22 percent. The power is proportional to the drive current. It is clear that an order of m:~gnihlde less drive current for a few milli~mperes of power per element may be needed. This may also result in higher speed at lower drive-power requirements as compared to the VCSEL modeled in Figure 3.
lo As noted above, the saturable absorber's size (Vs) and pl~ement may be strategically ~lecignPd parameters exploiting the optical field pattern of Figure 8a affecting rS, in order to control the oscillation frequency. nS and g5 can also be affected by material, doping and wavelength of operation in an effort to engineer the VCSEL
frequency response. To modulate the present VCSEL; the injection current (Ia) into the 5 VCSEL can be varied; for a fixed VCSEL bias, using a third terminal (50 of Figure 4), the carrier density, nS, within the saturable absorber can be modified via additional or less current injection; or the saturable absorber can be reverse-biased, by simultaneously altering its absorption (gs and nS) and carrier lifetime (~s) and thus mo~1nl~ting the VCSEL self-oscillation frequency. In effect, the latter is the shifting of a given k-value 20 curve of Figure 3. Furthermore, a given modulation frequency can be controlled in the fabrication process by location of the saturable absorber (rs) and effects of the mirror design and cavit.v Q (P, rS). For example, Q can be altered by varying the epi-mirror or WO96/41403 -17- PCT/U~ v/15' design, or by exploiting a hybrid semiconductor/dielectric mirror 72 as illustrated in Figure 10. This approach may also have the additional advantage of controlling the laser to single transverse mode emission stability over the entire opc;l~Lillg range. rS
and Q may also be altered by ch~nging laser size (and hence threshold current), all of s which permit great design flexibility into a VCSEL GHz generator.
Figure 11 shows a configuration 63 which incorporates VCSEL 60 of figure 4.
Self-pulsing light 70 of VCSEL 60 is frequency modulated with amplitude signals across terminals 50 and 48 from modulator driver 61. Modulator driver 61 receives signals 69 that are to modulate the self-p--ic~ting light 70 from signal source 67. Signals o 69, having a digital and/or analog format, may originate as signals conveying data, control information, communications and so forth.
The laser cavity frequency itself has been estimated to be in the tens of the GHz regime (at about 50 GHz from the modulation ~e~l,onse of the VCSEL shown in Figure 10.). Naturally, individual VCSELs are inherently extendible to both one and two~limen~ional arrays permi~tinp easy multiplexing of numerous GHz channels into a 100 plus GHz tr~n~mitter in a cost-effective, high yield style. Individual elements operating modulation frequency range can be controlled by fabrication and/or tuned in operation.
The total opel~Li~g range across the array can be increased by varying each element structure, andalso subsequently tuned as discussed previously.
Figure 12 shows an array 80 of rows or columns of VCSELs having apertures of various sizes. For in~t~n-e, VCSELs 81, 82, 83 and 84 may have a~ Lu,e sizes of 10, 20, 30 and 40 rnicrons, and self-pul~tinn frequencies of 100, 70, 50, and 30 GHz, respectively, for sarne drive current and electrical power applied to those VCSELs.
VCSEL 85 has the same ~lLule size as that of VCSEL 81 but a self-pulsation WO 96/41403 PCT/US~)5~v l 15 frequency of 120 GHz which is higher than that of VCSEL 81 for the same applied drive current and electrical power. The only structural difference between VCSELs 81 and 85 is that VCSEL 85 has a dielectric mirror layer that increases the Q of its cavity thereby increasing its self-pulsation frequency. Increasing the drive current would 5 increase the self-pulsation frequencies of all the VCSELs. Typically, array 80 would have two terminal VCSELs but could have three t~rmin~l VCSEL or a combination of them. The VCSELs of array 80 may be selectively turned on or off, or have their self-pulsation frequencies individually varied or mocl~ tecl Such an array would allow for a greatly extended bandwidth. On the other hand, figure 12 may represent an array 10 wherein the phases of each of the VCSELs of array 80 may be controlled relative to one another via current or external delays to result in a VCSEL phased array.
Figure 13 reveals a cross section of an array of VCSELs having the same structural and electrical characteristics. However, a coating 86 of material having a varying thickness is applied to the VCSEL array. Coating 86 has the effect of altering 5 the Q of the VCSEL relative to the thickness of the coating immerli~tely or directly over the respective VCSEL. For example, the greater the thickness of coating 86, the lower the Q of the respective VCSEL as shown by Q's 91 and 92 plotted in graph 89 and positions 87 and 88 of the respective VCSELs.
A plurality of VCSELs may be formed into a phased array wherein the phase 20 relationships among the VCSEL outputs are controlled and the outputs can be selectively switched to generate radiator groupings for establishing a particular or desired radiated pattern for a certain direction at a particular frequency.
Variations of the embodiment described are co~ lllplated. For example, the controllable mirror may use any voltage for a controllable effect. The light may be WO 96/41403 PCT/U~, - '07 /s~
emitted through either the ~u~ le at one end or the top mirror at the other end. It will also be understood that the term, "vertical," is used to mean perpendicular to the major s~ os of the substrate. The means for injecting power can have first and second conductivity types on opposite sides of the active region, either along the axis formed by s the first mirror, active region and second mirror, or along some other axis.
SURFACE EMITTING LASER
RA CKGRQUNn 5This invention relates to the field of semiconductor lasers, and particularly relates to vertical cavity surface ~mitfin~ lasers. More particularly, the invention relates to self-pulsing vertical cavity surface emittin~ lasers (VCSELs).
Conventional semiconcll~ctor lasers have found widespread use in modern technology as the light source of choice for various devices, e.g., comm~-nic~tions systems, compact disc players, and so on. The typical semiconductor laser is a double heterostructure with a narrow bandgap, high refractive index layer surrounded onopposed major surfaces by wide bandgap, low refractive index layers. The low bandgap layer is termed the "active layer", and the bandgap and refractive index differences serve to confine both charge carriers and optical energy to the active layer or region. Opposite IS ends of the active layer have mirror facets which forrn the laser cavity. The cl~ ling layers have opposite conductivity types and when current is passed through the structure, electrons and holes combine in the active layer to generate light.
Several types of surface emitting lasers have been developed. One such laser of special promise is termed a "vertical cavity surface emitting laser" (VCSEL). (See, for example, "Surface-emitting microlasers for photonic switching and in~
connections," Op~ir~l Fn~ineerin~, 29, pp. 210-214, March 1990, for a description of this laser. For other e~mr]e~ note U.S. patent 5,115,442, by Yong H. Lee et al., issued May 19, 1992, and entitled "Top ~ ,lill;ll~ surface çmit~ing laser structures," which is hereby incol~ul~Led by reference, and U.S. patent application serial number 08/175,016, by Mary K. Hibbs-Brenner, allowed, issue fee sent March 20, 1995, and entitled "Integrated laser power monitor," which is hereby inco.~oldL~d by reference. Also, see WO 96/41403 PCT/lJ~,. !IJ7 ~?
"Top-surface-emitting GaAs four-4uanlulll-well lasers emittin~ at 0.85 ,um," ~lec~onics LÇ~, 26, pp. 710-711, May 24, 1990.) The laser described has an active region with bulk or one or more LIUall~ well layers. The quantum well layers are interleaved with barrier layers. On opposite sides of the active region are mirror stacks which are formed by interleaved semiconductor layers having properties, such that each layer is typically a quarter wavelength thick at the wavelength (in the medium) of interest thereby forming the mirrors for the laser cavity. There are opposite conductivity type regions on opposite sides of the active region, and the laser is turned on and off by varying the current through the active region. However, a technique for digitally turning the laser on and off, varying the h~ ily of the emitted radiation from a vertical cavity surface emitting laser by voltage, with fixed injected current, is desirable. Such control is available with a three terminal voltage-controlled VCSEL described in U.S. patent 5,056,098, by Philip J. Anthony et al., and issued October 8, 1991, which is hereby incorporated by reference.
For several reasons, it is desirable to use surface emitting devices. For example, surface çmit~ing devices can be fabricated in arrays with relative ease while edge emi~tin~ devices can not be as easily fabricated. An array of lasers can be fabricated by growing the desired layers on a ~ul~ le and then p~ttPrning the layers to form the array. Individual lasers may be separately connPcted with apl)lop,;ate contacts. Such arrays are potentially useful in such diverse applications as, for example, image ploces~i.lg inter-chip comml~niç~fions~ i.e., optical intercormects, and so forth. Second, typical edge-el. iller lasers are turned on and offby varying the current flow through the device. This requires a relatively large change in the current through the device which WO 96/41403 PCT/US95.'17 /~ ' is undesirable; the surface smittin~ laser, described below, requires lower drive current, and thus the change of current to switch the VCSEL need not be large.
High-yield, high ~.r~ lance ~ICSELs have been d~mon~tr~t~rl and expedited in commercialization. There have been demonstrated breakthroughs in record s performance and flexibility exploiting variation of this VCSEL platform.
Top-surface-emittin~ AlGaAs-based VCSELs are producible in a manner analogous to semiconductor integrated circuits, and are amenable to low-cost high-volume m~nnf~-~t~lre and integration with existing electronics technology platforms.
Moreover, VCSEL uniformity and reproducibility have been demonstrated using a 0 standard, unmodified commercially available metal organic vapor phase epitaxy (MOVPE) chamber and molecular beam epitaxy (MBE) giving very high device yields.The flexibility of this technology was exploited for lateral mode engineering including spatially filtered hybrid semiconductor/dielectric DBR VCSELs for single-mode emission with stable wavelengths and current. At the other extreme, a "quasi-incoherent" (multi-wavelength) VCSELs have been demonstrated with properties that alleviate modal noise in multi-mode fibers to overcome mode selective loss, especially in data communication applications, or analogously noisy speckle patterns in im~ging applications.
SUMl~Y OF TE~ INV~NTION
The present invention is a controllable frequency-mo~ te-l producible, vertical cavity surface ~mittin~ laser (VCSEL) and array. The invention uses a saturable absorber (SA) contained within the VCSEL's distributed Bragg reflector (DBR), orspacer (as described in "Self-pulsations in vertical-cavity surface-~mittin~ lasers," by D.
Nugent et al., FleclTonics T ~tt~rs~ 31, pp.43-44, January 5, 1995). Under ~ ~,;ate WO 96/41403 PCT/U~, r l,7 ,5 ~
op~ildlillg conditions, the saturable absorber, strategically placed, forces the VCSEL to self-pulsate (in the GHz-regime) at rates related to the local i.,lel,sity, absorption, lifetime, and carrier density at the saturable absorber. This characteristic is exploited as a technique to frequency modulate a VCSEL. These opeldlillg conditions can be s controlled in real time by adjusting the injection current into the VCSEL itself, or by using a third tl?rrnin~l to modify the carrier density within the saturable absorber ~,vith additional current injection for a fixed VCSEL bias, or by reverse-biasing the saturable absorber thereby simultaneously altering the absorber's absorption and carrier lifetime and hence carrier density. Additionally, the center frequency of oscillation can be lo determined by the material, location and thickness of the saturable absorber, the mirror design, cavity Q and structure, and the laser si~ (and hence threshold current).
Furthermore, by e~ctf n~ling VCSELs of this type into arrays, one can easily multiplex numerous multi-GHz channels into a 100 plus GHz frequency-modulated transmitter in a cost-effective manner. Each of an array of individual VCSEL elements can have a 15 particular modulation frequency range det~nnined during fabrication and be further tuned during operation. The total operating range across the array can be increased by varying each element structure, and subsequently tuning it. VCSELs, arranged in an array, having differing sizes of ~Glt~es or other characteristics may be adjusted so as to form a phased array, with certain VCSELs turned on and others turned off, or a 20 variation of frequency to achieve a certain direction of r~ ti- n by the res-llt~nt phased array, or a phased-~ntenn~ array controller. VCSELs permit the construction of highly effective, long range phased arrays functioning at high frequencies using low power with low cost, unsophisticated electronics, in contrast to radio frequency (RF) or millim~t~r (MM) based phased arrays.
WO 96/41403 PCT/U..9~ '1,7 /:~
An additional advantage may be detl-rmin~l by self-pulsation of the VCSEL
which effectively decoheres the laser light output, wLere;l~ each individual pulse is reasonably coherent but the pulses together make the output laser light beam appear incoherent by averaging over the many pulses during the detection integration period, even though the laser beam itself may be in a coherent single transverse and lon~itl1~1in~l mode. Such decoherence can be used to reduce modal noise in a multi-moded fiber medium to overcome mode selective noise penalties. A two termin~l version of theVCSEL is suited for decoherence purposes as a fixed VCSEL bias would be used for a predetermined frequency of self pulsation. A predetermined injected current would result in VCSEL emitting light p~ tinE at a certain frequency. The output of a VCSEL
may be coupled into and conveyed by either a single mode or multi-mode medium orinto a "free-space" lensed system. A controlled frequency modulated VCSEL may also serve as a low cost, low power optical local oscillator within numerous radio-frequency (RF) systems.
RRTFF DF~CRTPTION OF T~TF DR~ G
Figure 1 is an illustration of a planar, current-guided, GaAs/AlGaAs top surface~mittinp vertical cavity laser.
Figure 2 is a scht-m~tic of a VCSEL with an absorber.
Figure 3 is a graph of pulsation frequency versus drive current for various positions of a saturable absorber in a VCSEL.
- Figure 4 is a cross-section of a three t~ormin~l frequency modulated VCSEL.
Figure 5 are graphs for various voltage-current levels or light power and self-pulsation frequency versus drive current for a three tf~.rmin7~l VCSEL.
WO 96/41403 PCT/US9~ 1~ / /S
Figure 6 is a plot of the absorption coefficient of a 4~1Lu111 well region versus the applied (reverse) voltage.
Figures 7a and 7b show waveforms of VCSEL self-pulsation and modulation.
Figure 8a is an optical field distribution of a VCSEL.
s Figure 8b shows light intensity versus position near the active region of a VCSEL.
Figure 9 is a graph of typical light power-current-voltage (L-I-V) characteristics of a state-of-the-art GaAs/AlGaAs VCSEL.
Figure l 0 shows a hybrid-DBR spatial-filtered VCSEL having a dielectric 0 mirror, with spatial filtering for single TEM00-mode control for improved performance and p ~tential fabrication advantages.
Figure l l is a diagram of a modulator and the three terminal VCSEL for providing frequency-modulated self-pulsations.
Figure l 2 reveals an array of VCSELs having various sized and/or structured 5 VCSEL apertures.
Figure l 3 is a cross section of an array of VCSELs having a Q-graded coating.
l)F.!~C}~lPTION OF T~F F.l~IROnIl\I~NTS
In figure l is a diagram of a two t~rmin~l VCSEL l 0. Formed on an n+ gallium arsenide (GaAs) substrate l4 is an n- contact l2. As indicated, substrate 14 is doped 20 with h1~ ;lies of a first type (i.e., n type). An n- mirror stack l 6 is formed on substrate l4. Formed on stack l6 is a spacer l8. Spacer l8 has a bottom confineme~t layer 20 formed on stack l6, an active region 22 formed on layer 20 and a top confinement layer 24 formed on active region 22. A p- mirror stack 26 is formed on top co~ ...ent layer 24. A p- metal layer 28 is formed on stack 26. The emission region may have a WO 96/41403 PCT/U59Gh, / /~ ~
passivation layer 30. Isolation region 29 restricts the area of the current flow 27 through the active region. Region 29 can be forrned by deep H+ ion implantation or by other known techniques.
Spacer 18 may contain ~1U2~ Ulll wells disposed between mirror stacks 16 and s 26. Stacks 16 and 26 are distributed Bragg reflector stacks. Quantum well active region 22 has alternating layers of ~ minllm gallium arsenide (AlGaAs) barrier layers and GaAs well layers. Stacks 16 and 26 have periodic layers of doped AlGaAs and alllminl-nn arsenide (AlAs). The AlGaAs of stack 16 is doped with the same type of hll~ul;ly as substrate 14 (i.e., n type), and the AlGaAs of stack 26 is doped with the o other kind of impurity (i.e., p type).
Contact layers 12 and 28 are ohmic contacts that allow ~p.~pliate electrical biasing of laser diode 10. When laser diode is forward biased with a more positive voltage on contact 28 than on contact 12, active region 22 emits light 32 which passes through stack 26.
1S There may be a saturable absorber, such as layer 25, composed of GaAs. for example, to absorb light at wavelengths (~) less than 870 nm or composed of InxGal xAs quantum wells (such as 80 angstroms in thickness and wherein x may be 0.2 as an example) to absorb light at wavelengths less than one micron. Layer 25 can be of a ~/4 order in thickness but need not be such. Layer 25 can be ~ te~1 anywhere in the stack 20 of device 10. Tn~te~d, for in~t~n~e, layer 31 may be the saturable absorber. Placement of the saturable absorber at a position in the cavity within layers 16 through 26 is n11llente~1 by the confinement factor. The saturable absorber may also be placed within spacer regions 20 or 24. For ~y~mple7 saturable absorber layer 25 is in-lie~ted to be a kth distance 90 of k one-quarter wavelengths from active region 22, as illllctriqte~l in WO 96/41403 PCT/U' ~G/'~,7 figure 2 which is a s-~h~mAfic of a portion of VCSEL 10. Active region 22 is illustrated with a thickness 94 and absorber 25 with a thicL n~cc 96. The thickness should be chosen in conjunction with the rest of the structure to m~int~in an adequate optically thick cavity. Figure 3 shows the results of pulsation frequency versus drive current for various (k) SA positions of ~14 thickness for a VCSEL of a particular design but not n~cecc~rily VCSEL 10 of figure 1. ~., D. Nugent et al. The drive current for VCSEL
10 would be applied via contacts 28 and 12. These figures are noted again below. Note that pulsation frequency may be tuned by injection current and influenced by design (i.e., absorber position).
o A three termin~l version of a vertical cavity surface emitting laser is shown in a sectional view in figure 4, in contrast to the two terminal VCSEL of figure 1. The frequency of the self pulsations of VCSEL 60 light 70 may be modulated or tuned with a drive power of varying amplitude between termin~lc 52 and 50. The saturable absorber may be situated anywhere between terminals 50 and 52. This inexpensive, low power device 60 has a very large frequency modulation bandwidth. The application of current across terminals 48 and 50 of VCSEL 60 can be constant, but tuned to give the right center self-pulsation frequency and/or light output. This configuration would result in minim~l amplitude modulation of the VCSEL 60 light 70, as opposed to a two-tt?rmin~l current-injected frequency-mocl~ te~l VCSEL.
Typically, the three t~rmin~l device 60 has a fixed constant current bt;lwt;ell t~rmin~lc 48 and 50 reslllting in a particular voltage-current (VI) (reverse or forward biased) being applied bcLw~ l those t~rmin~lC In figure 5, three levels 74, 76 and 78 of VIS0-s2 (voltage-current) across t~rmin~lc (50 and 52) are illustrated with light power and the self-pulsation frequency f5p versus the drive current through t~rrnin~lc 48 and WO 96/41403 PCT/U', ' '~,7 15 ~ _9_ 50. The drive power is used to modulate fsp. VI 7~ is greater than VI 76 which is greater than VI 74. As one can note, under these conditions for a given fsp, the drive current is less for a greater VI, as indicated by the dashed lines.
As will be appreciated by those skilled in the art, some elements which are not 5 essentiP~l to an underst~n-ling of the invention are either not depicted or described in detail. For example, only a single laser is illustrated in Figure 4, although it will be readily noted that an array of lasers typically may be present. Shown are substrate 34, regions 36 and 46 having a first conductivity type, active region 38, regions 40 and 42 having a second conductivity type, with saturable absorption region 44 having either or 10 neither conductivity type depending on design and operating conditions. Region 44 may comprise any nurnber of bulk materials or one or more quantum wells, being normally absorbing at the lasing wavelength. Regions 36, 40, 42 and 46 comprise mirrors which are depicted as interference mirrors. Region 36 comprises a first mirror.
Only several layers are shown for reasons of clarity. Appropriate regions of different 15 conductivity types will be readily selected by those skilled in the art. Regions 40, 42, 44 and 46 form a second distributed mirror with a cavity Q and hence an oscillation frequency controllable via power applied to the saturable absorber through contacts 50 and 52. The active region typically comprises one or more quantum well regions which are int~rle~ved with barrier layers, i.e., layers having a b~n(1g~r greater than the bandgap 20 of the ~u~llulll well region. However, the use of bulk semiconductors instead is not precluded. There are first, second, and third electrical contacts 48, 50, and 52, to region 36, region 40, and layer 46, rei,~e~,Livc;ly. Contact 48 may be physically made to ~ul~ dLe 34 if the substrate is con~ ctin~ and not semi-in~ ting Isolation region 54 restricts the area of the current flow through the active region to the area generally under WO 96/41403 PCT/U~,. 'l.7 region 46. Isolation region 54 can be formed by, e.g., deep ion implantation. Other forms of current and optical confinPment may be lltili7e-1 The portions of regions 36 and 40 having first and second conductivity types, form means for injecting carriers into the active region. The first and second interference mirrors further comprise a plurality s of interleaved first and second semiconductor layers with each layer having characteristics such that it is typically a quarter wavelength thick at the medium wavelength of interest thereby forming the respective interference mirror. The individual layers of the active region and the interference mirrors are not described with particularity as those skilled in the art know the skucture of these elements.
In the embodiment, subskate 34 is conducting or semi-in~ul~1ing GaAs, and regions 36, 40, 42 and 46 comprise alternating layers of AlAs and AlGaAs, as an example, with plo~t:llies as described in the previous paragraph. The active region may comprise one or multiple GaAs (or, e.g., InxGal xAs) quantum wells interleaved with AlGaAs barrier layers. Saturable absorption (SA) region 44 is optically coupled to 15 region 40, i.e., the absorption due to the SA is v.~ithin the diskibuted mirror incol~o.~ g regions 40, 42, 44 and 46. Region 46 comprises interference mirror layers of, e.g., AlAs and AlGaAs, and has a first conductivity type. Those skilled in the art will readily select a~plo~l;ate layer thi~knec~ç~ and these parameters need not be described in detail. The use of other semiconductors is contemplated and ~plol,.iate 20 choices will readily be made by those skilled in the art. For instance, other Group III-IV
semiconductors may be used.
Conventional and well-known epitaxial growth techniques, such as molecular beam epitaxy or metallo-organic chP~ni~l vapor deposition, may be used to grow the layers described. After the layers have been grown, cGllv~lllional p~ ..il.g techniques WO 96/41403 ~ PCT/U~ 7 l52 are then used to form the individual lasers in the array. Electrical contacts to the individual lasers are also fabricated. Those skilled in the art will readily select ~ a~,ol)liate p~tt~rning and cont~rting techniques.
, The frequency of oscillation of the self-pulsing light emitted from the device can s be varied by controlling the properties of the SA region within the VCSEL structure.
An embodiment may use current or voltage alteration of bulk or quantum-well material such as the quantum-confined Stark effect in quantum wells. This effect is well known and understood by those skilled in the art; the effect is described in Chapter 4 entitled "Nonlinear optical properties of semiconductor quanturn wells," by D.S. Chemla et al., lo in Optir~l Nonlin~rities ~nd Inst~hilities in Serniconductors~ pp. 339-347, (Academic Press 1988). Basically, the exciton absorption depends on the magnitude of the electric field in the quantum well. Figure 6 plots the absorption coefficient a of the L~ua~lull~
well region vertically versus the applied voltage V ho, izont~lly for a wavelength longer than that of the zero field exciton. In other words, in this figure, the absorption 5 coefficient a is plotted vertically versus the voltage V holi~onlally for an exemplary quantum-confined Stark effect region useful in the present device. For device 60, a voltage is between contacts 52 and 50, i.e., a reverse bias p-i-n junction, and an increasing voltage co~ onds to an increasing electric field and vice versa. Arbitrary units are used for purposes of exposition. The initial voltage is Vb. The absorption 20 coefficient a can be varied a significant arnount with a relatively small change in the - applied voltage. Similarly the field-dependent Franz-Keldysh effect can be used for an SA composed of bulk m~t~ri~l The use of this characteristic is noted below. Moreover, SA 44 of figure 4 may be fol~/v~d biased to inject current into it also allowing frequency tuning.
WO 96/41403 PCT/U' ,~ '0 A vertical cavity surface ~ni1ting laser needs relatively large reflectivities in both mirror stacks for lasing; typically, mirror stack reflectivities should be 99 percent or greater. The SA region functions as a bias-dependent absorber, by a~.o~liately varying the bias, the laser pulsation can be frequency modulated at different rates. A
s small voltage or current change may be used to vary the absorption or carrier density of the SA and hence the frequency of the VCSEL self-pulsation. However, the magnitude of the current supplied through contacts 48 and 50 of device 60 of figure 4, may remain essentially constant as the laser is mod~ t~-l This simplifies the design of the power supply (not shown) for the array and minimi7.oc any problems that might otherwise arise lo due to the varying heat generated in the vertical cavity laser array, due to the varying carrier density in the active region, and due to the resulting index changes in the optical cavity.
The optical spatial field distribution of the surface emitting laser and the position of the saturable absorber are both engin-oering parameters. More or less absorption can 5 be obtained by placing the absorber near a node or antinode, respectively. More or less absorption can also be obtained by increasing or decr~;a~illg the reflectivity of regions 40 and 36 of device 60, thereby coupling relatively less or more of the SA into the distributed mirror. Additionally, the material, thickness and/or design and number of the ~ u.Lu--- wells, or of bulk m~t~ri~l~, in SA 44 can be varied from that described 20 herein. Those skilled in the art will readily select app.op.;ate parameters.
The invention utilizes the saturable absorber in the optical cavity to achieve high-speed bias-controlled tuning of the self oscillation or pulsation frequency of a VCSEL or VCSEL array while ...~ ;..;..g co.~L~-~ current and hence ...i..i...i~ g chirp, relaxation oscill~tion~, and so forth. In Figure 4, t~rmin~l 50 l~ st;lll~ the top WO 96/41403 PCT/U', (usually the p type) contact and t~nin~l 48 ~rese~ the bottom contact (usually the n type) contact. The bottom contact may be a common met~li7~tion on the bottom like ~ contact 12 as shown in Figure 1. Contact 52 re~l. se~ a third connection which can be J used to either reverse bias or forward bias the saturable absorber layer which is 5 s~h~m~tically illustrated by layer 44.
The incorporation of a saturable absorber can result in self pulsations of the laser and is a common technique for "mode-locking" the laser to produce a train of laser pulses whose period is plu~o~lional to the cavity length. Figure 7a reveals the nature of a frequency-modulated self-pulsing waveforrn. Profile 62 is the frequency of the self-lo pulsations of the VCSEL with respect to time. Profile 64 is the amplitude of themo~lnl~ting waveform of the power (VI) signal sent to the VCSEL. The overall envelope 62 may of course be changed by the power (Vl) between terrninals 48 and 50 of VCSEL60. The waveform of the self-pulsations switches between Ima~ and Imjn which are light "on" and light "off" conditions, .~ectively, of the pulsation. Imjn may 5 be between zero amplitude and ImaX, depending on the electrical and physical characteristics of, and the power p~r~m~t.ors to the VCSEL, and is ideally zero.
Self pulsations up to 6 GHz have also been demonstrated in a VCSEL external cavity configuration, lltili7ing the VCSELs geometrical polarization degeneracy. This approach is also a way of producing GHz-range self-modulation whose frequency can 20 be modulated by varying the optical cavity length. "High Frequency Polarization Self-modulation in Vertical Cavity Surface Fmittin~ Lasers," by S. Jiang et al., on pp. 3545-3547 in ~pl. P~ys. T ett., Vol. 63 (1993). Selfpulsations within a long-wavelength VCSEL were theoretically analyzed using the following coupled rate equations (I~., Nugent et al.):
dP/dt= raga(na - nOa)P + rsgs(ns - nOS)P - P/Tpb + Va~Bna (l);
dna/dt = -raga(na - noa)plva + -na/~a + Ia/eVa (2); and dns/dt = -rsgS(ns - nos)P/Vs + -ns/~s + (Is/eVs) (3);
where we have added the third term in equation (3) to allow for additional modulation 5 of the SA.
In the equations, the subscripts "a" and "s" identify the active and saturable absorber, respectively; the symbol ~r~ refers to the photon confinçment factor. The third terrn Is/eVs is added in equation (3) to represent the case for current injection via contacts 50 and 52 as shown in Figure 4. In the third equation, rs and Vs are o determined or affected by material, structure and material placement; and gS~ nS, nOS, T5 and Is are changed by current-voltage (VIs0 s2) across terrninals 50 and 52, and the device consequently can be tuned.
In the three above-disclosed equations, the respective terrns mean: ra is the active region confinement factor; ga is the active region differential gain; na is the active 5 region carrier density; nOa is the active region l~ ellcy density; P is the optical power; rS is the SA confinement factor; g5 is the SA di~l~.,lial gain; ns is the SA
carrier density; nOS is the SA l~ls~llcy density; ~pb is the cavity lifetime; Va is the active region volume; ,B is the spontaneous emission factor; B is the bimolecular recombination coefficient; ~a is the active region lifetime; Ia is the active region CA 0222l308 l997-ll-l7 WO 96/41403 -15- PCT/U' ,~ 'I / /5~
injection current; e is the electron charge, Vs is the SA volurne, ~s is the SA lifetime;
and Is is the current in the SA.
Figure 3 ~r~phit ~lly represents the calculations of pulsation frequency versus drive current for long-wavelength laser parameters. I~i~. Nugent et al. The k-pararneter s represents the location of the saturable absorber, assumed to be the kth quarter wave in active spacer 18 of figure 1. The graph of figure 3 shows the self-sustained pulsation frequency in GHz of a VCSEL, versus drive current Ia in milli~mperes for various k's of the saturable absorber. Curve 66 shows the maximurn drive currents and corresponding frequencies for the respective k's for self-suct~intod pulsations. Curve 68 shows the o maximum drive currents against frequencies of darnped relaxation oscillations, detPrminPcl from small signal analyses. Points 70 reveal the minimllm drive currents for the various k~s. I12i~. D. Nugent et al. The absolute current, frequency and k depen-lP~re will vary in accordance with equations (1)-(3) for VCSEL 60.
The optical intensity of the light decreases roughly exponentially from the spacer 5 region as indicated in Figure 8a. This figure reveals the photon density distribution within the VCSEL structure. Figure 8b shows a relationship of light intensity relative to physical position in the VCSEL for a typical VCSEL with a one ~-thick cavity (a cavity having one of other multiples of ~/2 is also possible).
The curves for device 60 of Figure 3 are generated using InP/InGaAsP based 20 m~tPri~l~ near 1.55 microns. Typical light power-current-voltage (L-I-V) characteristics of state-of-the art GaAs/AlGaAs VCSELs are given in Figure 9. Figure 9 is a graph of power in milliwatts, voltage in volts and wallplug efficiency in percent versus current in milli~"~pe,es for a GaAs VCSEL having an implant ~ mPtpr (g) of 20 microns, a CA 0222l308 l997-ll-l7 WO 96/41403 PCT/U' ,. '(, window aperture (w) of 15 microns, a series rçeiet~nt~e (R) of 31 ohms or less, and a wavelength (~) of 844 nm at room te~ Jc.dlul~e (25 degrees C). Window a~.Lule 93and implant diameter 95 are illustrated in figures 1 and 10. The graph of figure 9 reveals the VCSEL to have a 1.6 volt (0.1 volt above bandgap) CW threshold voltage, a 5 3 milli~mpere threshold current and a wallplug efficiency 1l of 22 percent. The power is proportional to the drive current. It is clear that an order of m:~gnihlde less drive current for a few milli~mperes of power per element may be needed. This may also result in higher speed at lower drive-power requirements as compared to the VCSEL modeled in Figure 3.
lo As noted above, the saturable absorber's size (Vs) and pl~ement may be strategically ~lecignPd parameters exploiting the optical field pattern of Figure 8a affecting rS, in order to control the oscillation frequency. nS and g5 can also be affected by material, doping and wavelength of operation in an effort to engineer the VCSEL
frequency response. To modulate the present VCSEL; the injection current (Ia) into the 5 VCSEL can be varied; for a fixed VCSEL bias, using a third terminal (50 of Figure 4), the carrier density, nS, within the saturable absorber can be modified via additional or less current injection; or the saturable absorber can be reverse-biased, by simultaneously altering its absorption (gs and nS) and carrier lifetime (~s) and thus mo~1nl~ting the VCSEL self-oscillation frequency. In effect, the latter is the shifting of a given k-value 20 curve of Figure 3. Furthermore, a given modulation frequency can be controlled in the fabrication process by location of the saturable absorber (rs) and effects of the mirror design and cavit.v Q (P, rS). For example, Q can be altered by varying the epi-mirror or WO96/41403 -17- PCT/U~ v/15' design, or by exploiting a hybrid semiconductor/dielectric mirror 72 as illustrated in Figure 10. This approach may also have the additional advantage of controlling the laser to single transverse mode emission stability over the entire opc;l~Lillg range. rS
and Q may also be altered by ch~nging laser size (and hence threshold current), all of s which permit great design flexibility into a VCSEL GHz generator.
Figure 11 shows a configuration 63 which incorporates VCSEL 60 of figure 4.
Self-pulsing light 70 of VCSEL 60 is frequency modulated with amplitude signals across terminals 50 and 48 from modulator driver 61. Modulator driver 61 receives signals 69 that are to modulate the self-p--ic~ting light 70 from signal source 67. Signals o 69, having a digital and/or analog format, may originate as signals conveying data, control information, communications and so forth.
The laser cavity frequency itself has been estimated to be in the tens of the GHz regime (at about 50 GHz from the modulation ~e~l,onse of the VCSEL shown in Figure 10.). Naturally, individual VCSELs are inherently extendible to both one and two~limen~ional arrays permi~tinp easy multiplexing of numerous GHz channels into a 100 plus GHz tr~n~mitter in a cost-effective, high yield style. Individual elements operating modulation frequency range can be controlled by fabrication and/or tuned in operation.
The total opel~Li~g range across the array can be increased by varying each element structure, andalso subsequently tuned as discussed previously.
Figure 12 shows an array 80 of rows or columns of VCSELs having apertures of various sizes. For in~t~n-e, VCSELs 81, 82, 83 and 84 may have a~ Lu,e sizes of 10, 20, 30 and 40 rnicrons, and self-pul~tinn frequencies of 100, 70, 50, and 30 GHz, respectively, for sarne drive current and electrical power applied to those VCSELs.
VCSEL 85 has the same ~lLule size as that of VCSEL 81 but a self-pulsation WO 96/41403 PCT/US~)5~v l 15 frequency of 120 GHz which is higher than that of VCSEL 81 for the same applied drive current and electrical power. The only structural difference between VCSELs 81 and 85 is that VCSEL 85 has a dielectric mirror layer that increases the Q of its cavity thereby increasing its self-pulsation frequency. Increasing the drive current would 5 increase the self-pulsation frequencies of all the VCSELs. Typically, array 80 would have two terminal VCSELs but could have three t~rmin~l VCSEL or a combination of them. The VCSELs of array 80 may be selectively turned on or off, or have their self-pulsation frequencies individually varied or mocl~ tecl Such an array would allow for a greatly extended bandwidth. On the other hand, figure 12 may represent an array 10 wherein the phases of each of the VCSELs of array 80 may be controlled relative to one another via current or external delays to result in a VCSEL phased array.
Figure 13 reveals a cross section of an array of VCSELs having the same structural and electrical characteristics. However, a coating 86 of material having a varying thickness is applied to the VCSEL array. Coating 86 has the effect of altering 5 the Q of the VCSEL relative to the thickness of the coating immerli~tely or directly over the respective VCSEL. For example, the greater the thickness of coating 86, the lower the Q of the respective VCSEL as shown by Q's 91 and 92 plotted in graph 89 and positions 87 and 88 of the respective VCSELs.
A plurality of VCSELs may be formed into a phased array wherein the phase 20 relationships among the VCSEL outputs are controlled and the outputs can be selectively switched to generate radiator groupings for establishing a particular or desired radiated pattern for a certain direction at a particular frequency.
Variations of the embodiment described are co~ lllplated. For example, the controllable mirror may use any voltage for a controllable effect. The light may be WO 96/41403 PCT/U~, - '07 /s~
emitted through either the ~u~ le at one end or the top mirror at the other end. It will also be understood that the term, "vertical," is used to mean perpendicular to the major s~ os of the substrate. The means for injecting power can have first and second conductivity types on opposite sides of the active region, either along the axis formed by s the first mirror, active region and second mirror, or along some other axis.
Claims (14)
1. A frequency modulated self-pulsing VCSEL comprising:
a VCSEL comprising:
a first mirror region having a first terminal;
a second mirror region having a second terminal;
an active region situated between the first and second mirror regions; and a saturable absorber situated between the first and second terminals, and a power source, connected to the first and second terminals of said VCSEL, for providing variable power to said VCSEL to affect a pulsing of a light output of said VCSEL, the pulsing having a frequency modulated by the variable power from said power source.
a VCSEL comprising:
a first mirror region having a first terminal;
a second mirror region having a second terminal;
an active region situated between the first and second mirror regions; and a saturable absorber situated between the first and second terminals, and a power source, connected to the first and second terminals of said VCSEL, for providing variable power to said VCSEL to affect a pulsing of a light output of said VCSEL, the pulsing having a frequency modulated by the variable power from said power source.
2. The VCSEL of claim 1 having a third terminal connected to said VCSEL and situated between the first and second terminal, the third terminal for receiving a signal to effect frequency modulation of the frequency of the pulsing.
3. A frequency modulated self-pulsing VCSEL comprising:
a VCSEL having a saturable absorber, and first and second terminals; and a variable power source, connected to the first and second terminals of said VCSEL, for providing a variable injected power through the VCSEL
which results in a variable frequency of pulsing of a light output of said VCSEL, in proportion to the variable injected power.
a VCSEL having a saturable absorber, and first and second terminals; and a variable power source, connected to the first and second terminals of said VCSEL, for providing a variable injected power through the VCSEL
which results in a variable frequency of pulsing of a light output of said VCSEL, in proportion to the variable injected power.
4. The VCSEL of claim 3 having a third terminal for receiving a signal having a variable amplitude to effect frequency modulation of the frequency of the pulsing.
5. A VCSEL system comprising:
a plurality of VCSELs wherein each VCSEL of said plurality, comprises:
a first mirror region having a first terminal;
a second mirror region having a second terminal;
an active region situated between the first and second mirror regions; and a saturable absorber situated between the first and second terminals; and wherein for certain magnitudes of power applied to the first and second terminals, the VCSEL outputs self-pulsing light having certain frequencies corresponding to the certain magnitudes of power applied, respectively;
a signal source for providing a signal having an amplitude; and a modulation driver, connected to the first and second terminals of each VCSEL
and to said signal source, for providing the power applied having a magnitude varied in accordance with the amplitude of the signal from said signal source, to each VCSEL to affect the frequency of self-pulsing light of each VCSEL, the frequency of the self-pulsing light modulated in accordance with the signal from said signal source.
a plurality of VCSELs wherein each VCSEL of said plurality, comprises:
a first mirror region having a first terminal;
a second mirror region having a second terminal;
an active region situated between the first and second mirror regions; and a saturable absorber situated between the first and second terminals; and wherein for certain magnitudes of power applied to the first and second terminals, the VCSEL outputs self-pulsing light having certain frequencies corresponding to the certain magnitudes of power applied, respectively;
a signal source for providing a signal having an amplitude; and a modulation driver, connected to the first and second terminals of each VCSEL
and to said signal source, for providing the power applied having a magnitude varied in accordance with the amplitude of the signal from said signal source, to each VCSEL to affect the frequency of self-pulsing light of each VCSEL, the frequency of the self-pulsing light modulated in accordance with the signal from said signal source.
6. The VCSEL system of claim 5 wherein each VCSEL of said plurality of VCSELs has a third terminated between the first and second terminal, the third terminal for receiving a second signal to effect frequency modulation of the frequency of self-pulsing light.
7. The VCSEL system of claim 5 wherein each VCSEL of said plurality of VCSELs has a frequency of self-pulsation that is different from a frequency of self-pulsation of other VCSELs of said plurality of VCSELs, for a certain magnitude of power applied to the first and second terminals of each VCSEL of said plurality of VCSELs.
8. The VCSEL system of claim 5 wherein said plurality of VCSELs is arranged in an array.
9. The VCSEL system of claim 8 wherein said array is a phased array wherein the phase relationships among VCSEL outputs are controlled and the outputs can be selectively switched to generate radiator groupings for establishing a selected radiated pattern for a certain direction at a particular frequency.
10. The VCSEL system of claim 5 wherein each VCSEL is a local oscillator.
11. The VCSEL system of claim 5 wherein at least one VCSEL has a noncoherent output.
12. The VCSEL system of claim 11 wherein the at least one VCSEL is for communications.
13. The VCSEL system of claim 12 wherein the at least one VCSEL is for reducing modal noise or speckle.
14. A VCSEL, for outputting a self-pulsing light having a frequency, comprising:
a first mirror region having a first terminal;
a second mirror region having a second terminal;
an active region situated between the first and second mirror regions; and a saturable absorber, situated between the first and second terminals, having a third terminal; and a power source connected to the first and second terminals of said VCSEL;
a signal source for providing a signal having an amplitude; and a modulation driver, connected to the first and third terminals of said VCSEL
and to said signal source, for providing power having a magnitude varied in accordance with the amplitude of the signal from said signal source, to said VCSEL to affect the frequency of the self-pulsing light of said VCSEL, the frequency of the self-pulsing light modulated in accordance with the signal from said signal source.
a first mirror region having a first terminal;
a second mirror region having a second terminal;
an active region situated between the first and second mirror regions; and a saturable absorber, situated between the first and second terminals, having a third terminal; and a power source connected to the first and second terminals of said VCSEL;
a signal source for providing a signal having an amplitude; and a modulation driver, connected to the first and third terminals of said VCSEL
and to said signal source, for providing power having a magnitude varied in accordance with the amplitude of the signal from said signal source, to said VCSEL to affect the frequency of the self-pulsing light of said VCSEL, the frequency of the self-pulsing light modulated in accordance with the signal from said signal source.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/476,965 US5574738A (en) | 1995-06-07 | 1995-06-07 | Multi-gigahertz frequency-modulated vertical-cavity surface emitting laser |
| US08/476,965 | 1995-06-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2221308A1 true CA2221308A1 (en) | 1996-12-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002221308A Abandoned CA2221308A1 (en) | 1995-06-07 | 1996-05-28 | Multi-gigahertz frequency-modulated vertical-cavity surface emitting laser |
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| Country | Link |
|---|---|
| US (1) | US5574738A (en) |
| EP (1) | EP0830718B1 (en) |
| JP (1) | JPH11511292A (en) |
| CA (1) | CA2221308A1 (en) |
| DE (1) | DE69610499T2 (en) |
| WO (1) | WO1996041403A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4885592A (en) * | 1987-12-28 | 1989-12-05 | Kofol J Stephen | Electronically steerable antenna |
| US5115442A (en) * | 1990-04-13 | 1992-05-19 | At&T Bell Laboratories | Top-emitting surface emitting laser structures |
| US5056098A (en) * | 1990-07-05 | 1991-10-08 | At&T Bell Laboratories | Vertical cavity laser with mirror having controllable reflectivity |
| US5040183A (en) * | 1990-07-20 | 1991-08-13 | At&T Bell Laboratories | Apparatus comprising optical pulse-generating means |
| US5206872A (en) * | 1991-11-01 | 1993-04-27 | At&T Bell Laboratories | Surface emitting laser |
| US5359447A (en) * | 1993-06-25 | 1994-10-25 | Hewlett-Packard Company | Optical communication with vertical-cavity surface-emitting laser operating in multiple transverse modes |
-
1995
- 1995-06-07 US US08/476,965 patent/US5574738A/en not_active Expired - Lifetime
-
1996
- 1996-05-28 JP JP9500739A patent/JPH11511292A/en not_active Ceased
- 1996-05-28 WO PCT/US1996/007752 patent/WO1996041403A1/en active IP Right Grant
- 1996-05-28 EP EP96921224A patent/EP0830718B1/en not_active Expired - Lifetime
- 1996-05-28 DE DE69610499T patent/DE69610499T2/en not_active Expired - Lifetime
- 1996-05-28 CA CA002221308A patent/CA2221308A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| EP0830718B1 (en) | 2000-09-27 |
| DE69610499T2 (en) | 2001-02-01 |
| WO1996041403A1 (en) | 1996-12-19 |
| JPH11511292A (en) | 1999-09-28 |
| DE69610499D1 (en) | 2000-11-02 |
| EP0830718A1 (en) | 1998-03-25 |
| US5574738A (en) | 1996-11-12 |
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| Date | Code | Title | Description |
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| EEER | Examination request | ||
| FZDE | Discontinued |