CA2252926A1 - All-metal, giant magnetoresistive, solid-state component - Google Patents

All-metal, giant magnetoresistive, solid-state component

Info

Publication number
CA2252926A1
CA2252926A1 CA002252926A CA2252926A CA2252926A1 CA 2252926 A1 CA2252926 A1 CA 2252926A1 CA 002252926 A CA002252926 A CA 002252926A CA 2252926 A CA2252926 A CA 2252926A CA 2252926 A1 CA2252926 A1 CA 2252926A1
Authority
CA
Canada
Prior art keywords
solid
thin
state component
metal
nodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002252926A
Other languages
French (fr)
Other versions
CA2252926C (en
Inventor
E. James Torok
Richard Spitzer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Integrated Magnetoelectronics Corp
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2252926A1 publication Critical patent/CA2252926A1/en
Application granted granted Critical
Publication of CA2252926C publication Critical patent/CA2252926C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3281—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure, e.g. NiFe/Cu/Co
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/16—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using saturable magnetic devices
    • H03K19/166—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using saturable magnetic devices using transfluxors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors

Abstract

A solid-state component (200) is de-scribed which includes a network of thin-film elements (202). At least one thin-film element (202) exhibits giant magnetoresistance. The network (202) has a plurality of nodes (208, 210, 212, 214), each of which represents a di-rect electrical connection between two of the thin-film elements (202). First and second ones of the plurality of nodes (208, 210, 212, 214) comprise power terminals (208, 210). Third and fourth ones of the plurality of nodes (208, 210, 212, 214) comprise an output (212, 214).
A first conductor (206) is inductively coupled to the at least one thin-film element (202) for applying a magnetic field thereto.
CA002252926A 1996-05-02 1997-05-02 All-metal, giant magnetoresistive, solid-state component Expired - Fee Related CA2252926C (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US1670496P 1996-05-02 1996-05-02
US08/846,410 US5929636A (en) 1996-05-02 1997-04-30 All-metal giant magnetoresistive solid-state component
US08/846,410 1997-04-30
US60/016,704 1997-04-30
PCT/US1997/007425 WO1997041601A1 (en) 1996-05-02 1997-05-02 All-metal, giant magnetoresistive, solid-state component

Publications (2)

Publication Number Publication Date
CA2252926A1 true CA2252926A1 (en) 1997-11-06
CA2252926C CA2252926C (en) 2002-08-06

Family

ID=26688967

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002252926A Expired - Fee Related CA2252926C (en) 1996-05-02 1997-05-02 All-metal, giant magnetoresistive, solid-state component

Country Status (8)

Country Link
US (2) US5929636A (en)
EP (1) EP0896734B1 (en)
JP (1) JP2002502549A (en)
KR (1) KR100467117B1 (en)
AU (1) AU3117097A (en)
CA (1) CA2252926C (en)
DE (1) DE69735627T2 (en)
WO (1) WO1997041601A1 (en)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6741494B2 (en) * 1995-04-21 2004-05-25 Mark B. Johnson Magnetoelectronic memory element with inductively coupled write wires
JPH11316919A (en) 1998-04-30 1999-11-16 Hitachi Ltd Spin tunnel magnetoresistive effect magnetic head
EP0971424A3 (en) * 1998-07-10 2004-08-25 Interuniversitair Microelektronica Centrum Vzw Spin-valve structure and method for making spin-valve structures
US6194774B1 (en) * 1999-03-10 2001-02-27 Samsung Electronics Co., Ltd. Inductor including bonding wires
US6240622B1 (en) * 1999-07-09 2001-06-05 Micron Technology, Inc. Integrated circuit inductors
US6507187B1 (en) * 1999-08-24 2003-01-14 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Ultra-sensitive magnetoresistive displacement sensing device
US6609174B1 (en) * 1999-10-19 2003-08-19 Motorola, Inc. Embedded MRAMs including dual read ports
DE10032272C2 (en) * 2000-07-03 2002-08-29 Infineon Technologies Ag Current driver arrangement for MRAM
US6538437B2 (en) * 2000-07-11 2003-03-25 Integrated Magnetoelectronics Corporation Low power magnetic anomaly sensor
US6483740B2 (en) * 2000-07-11 2002-11-19 Integrated Magnetoelectronics Corporation All metal giant magnetoresistive memory
US7248713B2 (en) 2000-09-11 2007-07-24 Micro Bar Technology, Inc. Integrated automatic telephone switch
US6624490B2 (en) 2000-10-26 2003-09-23 The University Of Iowa Research Foundation Unipolar spin diode and the applications of the same
DE10053206C1 (en) * 2000-10-26 2002-01-17 Siemens Ag Logic circuit device uses magnetoresistive element with magnetizable soft magnetic layer and selective perpendicular magnetic field for alteration of logic function
US6738284B2 (en) 2001-03-23 2004-05-18 Integrated Magnetoelectronics Corporation Transpinnor-based sample-and-hold circuit and applications
EP1371100A4 (en) * 2001-03-23 2004-09-01 Integrated Magnetoelectronics A transpinnor-based switch and applications
DE10118650A1 (en) * 2001-04-14 2002-10-17 Philips Corp Intellectual Pty Angle sensor and method for increasing the anisotropy field strength of a sensor unit of an angle sensor
JP3603872B2 (en) * 2001-05-16 2004-12-22 松下電器産業株式会社 Magnetic sensor and banknote recognition device using it
US6688169B2 (en) 2001-06-15 2004-02-10 Textron Systems Corporation Systems and methods for sensing an acoustic signal using microelectromechanical systems technology
US6711437B2 (en) 2001-07-30 2004-03-23 Medtronic, Inc. Pacing channel isolation in multi-site cardiac pacing systems
US6700371B2 (en) * 2001-09-05 2004-03-02 Honeywell International Inc. Three dimensional conductive strap for a magnetorestrictive sensor
US6771472B1 (en) 2001-12-07 2004-08-03 Seagate Technology Llc Structure to achieve thermally stable high sensitivity and linear range in bridge GMR sensor using SAF magnetic alignments
US7046117B2 (en) * 2002-01-15 2006-05-16 Honeywell International Inc. Integrated magnetic field strap for signal isolator
US6859063B2 (en) * 2002-04-11 2005-02-22 Integrated Magnetoelectronics Corporation Transpinnor-based transmission line transceivers and applications
AU2003225048A1 (en) 2002-04-19 2003-11-03 Integrated Magnetoelectronics Corporation Interfaces between semiconductor circuitry and transpinnor-based circuitry
US8284970B2 (en) * 2002-09-16 2012-10-09 Starkey Laboratories Inc. Switching structures for hearing aid
US7369671B2 (en) 2002-09-16 2008-05-06 Starkey, Laboratories, Inc. Switching structures for hearing aid
US6992919B2 (en) * 2002-12-20 2006-01-31 Integrated Magnetoelectronics Corporation All-metal three-dimensional circuits and memories
US7259545B2 (en) * 2003-02-11 2007-08-21 Allegro Microsystems, Inc. Integrated sensor
US7005852B2 (en) 2003-04-04 2006-02-28 Integrated Magnetoelectronics Corporation Displays with all-metal electronics
US7027319B2 (en) * 2003-06-19 2006-04-11 Hewlett-Packard Development Company, L.P. Retrieving data stored in a magnetic integrated memory
US7244997B2 (en) * 2003-07-08 2007-07-17 President And Fellows Of Harvard College Magneto-luminescent transducer
US20050083743A1 (en) * 2003-09-09 2005-04-21 Integrated Magnetoelectronics Corporation A California Corporation Nonvolatile sequential machines
US7177107B2 (en) * 2004-02-11 2007-02-13 Hitachi Global Storage Technologies Netherlands B.V. Preamplifier circuit with signal interference cancellation suitable for use in magnetic storage devices
EP1574850A1 (en) * 2004-03-08 2005-09-14 Siemens Aktiengesellschaft Apparatus for non-destructive detection of deep defects in electric conducting materials
US20050269612A1 (en) * 2004-05-11 2005-12-08 Integrated Magnetoelectronics Solid-state component based on current-induced magnetization reversal
JP4692805B2 (en) * 2004-06-30 2011-06-01 Ｔｄｋ株式会社 Magnetic sensing element and method for forming the same
US7777607B2 (en) * 2004-10-12 2010-08-17 Allegro Microsystems, Inc. Resistor having a predetermined temperature coefficient
FR2876800B1 (en) 2004-10-18 2007-03-02 Commissariat Energie Atomique METHOD AND DEVICE FOR MEASURING A MAGNETIC FIELD USING A MAGNETORESITIVE SENSOR
WO2006078720A2 (en) * 2005-01-19 2006-07-27 Integrated Magnetoelectronics Corporation Radiation detector
US7839605B2 (en) * 2005-11-13 2010-11-23 Hitachi Global Storage Technologies Netherlands B.V. Electrical signal-processing device integrating a flux sensor with a flux generator in a magnetic circuit
US7768083B2 (en) * 2006-01-20 2010-08-03 Allegro Microsystems, Inc. Arrangements for an integrated sensor
US7911830B2 (en) 2007-05-17 2011-03-22 Integrated Magnetoelectronics Scalable nonvolatile memory
US7795862B2 (en) 2007-10-22 2010-09-14 Allegro Microsystems, Inc. Matching of GMR sensors in a bridge
US7816905B2 (en) * 2008-06-02 2010-10-19 Allegro Microsystems, Inc. Arrangements for a current sensing circuit and integrated current sensor
FR2942924B1 (en) * 2009-03-06 2011-06-24 Thales Sa HYPERFREQUENCY FREQUENCY TRANSPOSER WITH REDUCED DIMENSIONS
US8619467B2 (en) * 2010-02-22 2013-12-31 Integrated Magnetoelectronics High GMR structure with low drive fields
US9322889B2 (en) * 2011-12-30 2016-04-26 Nve Corporation Low hysteresis high sensitivity magnetic field sensor
US10492009B2 (en) * 2012-05-07 2019-11-26 Starkey Laboratories, Inc. Hearing aid with distributed processing in ear piece
US9784715B2 (en) 2013-04-19 2017-10-10 Zetec, Inc. Eddy current inspection probe based on magnetoresistive sensors
CN103384141B (en) * 2013-07-24 2015-05-06 江苏多维科技有限公司 Magnetic-resistance mixer
US9632150B2 (en) * 2015-04-27 2017-04-25 Everspin Technologies, Inc. Magnetic field sensor with increased field range
US9741923B2 (en) 2015-09-25 2017-08-22 Integrated Magnetoelectronics Corporation SpinRAM
US10762940B2 (en) 2016-12-09 2020-09-01 Integrated Magnetoelectronics Corporation Narrow etched gaps or features in multi-period thin-film structures
US10935612B2 (en) 2018-08-20 2021-03-02 Allegro Microsystems, Llc Current sensor having multiple sensitivity ranges
US11187764B2 (en) 2020-03-20 2021-11-30 Allegro Microsystems, Llc Layout of magnetoresistance element
US11567108B2 (en) 2021-03-31 2023-01-31 Allegro Microsystems, Llc Multi-gain channels for multi-range sensor

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3972786A (en) * 1974-06-28 1976-08-03 Ampex Corporation Mechanically enhanced magnetic memory
US4751677A (en) * 1986-09-16 1988-06-14 Honeywell Inc. Differential arrangement magnetic memory cell
JPH03269383A (en) * 1990-03-20 1991-11-29 Nec Corp Magnetic sensor and its signal processing system
US5173873A (en) * 1990-06-28 1992-12-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration High speed magneto-resistive random access memory
DE4319146C2 (en) * 1993-06-09 1999-02-04 Inst Mikrostrukturtechnologie Magnetic field sensor, made up of a magnetic reversal line and one or more magnetoresistive resistors
US5422621A (en) * 1993-10-29 1995-06-06 International Business Machines Corporation Oriented granular giant magnetoresistance sensor
FR2712420B1 (en) * 1993-11-08 1995-12-15 Commissariat Energie Atomique Magnetic read head with multilayer magnetoresistive element and concentrator and method of making the same.
JPH07153034A (en) * 1993-11-26 1995-06-16 Matsushita Electric Ind Co Ltd Magnetoresistance effect device and its manufacture
US5650889A (en) * 1994-02-07 1997-07-22 Hitachi, Ltd. Magnetic recording medium containing heavy rare gas atoms, and a magnetic transducing system using the medium
US5587943A (en) * 1995-02-13 1996-12-24 Integrated Microtransducer Electronics Corporation Nonvolatile magnetoresistive memory with fully closed flux operation
US5654566A (en) * 1995-04-21 1997-08-05 Johnson; Mark B. Magnetic spin injected field effect transistor and method of operation
US5652445A (en) * 1995-04-21 1997-07-29 Johnson; Mark B. Hybrid hall effect device and method of operation
US5585986A (en) * 1995-05-15 1996-12-17 International Business Machines Corporation Digital magnetoresistive sensor based on the giant magnetoresistance effect
US5650958A (en) * 1996-03-18 1997-07-22 International Business Machines Corporation Magnetic tunnel junctions with controlled magnetic response

Also Published As

Publication number Publication date
DE69735627D1 (en) 2006-05-18
DE69735627T2 (en) 2006-08-24
AU3117097A (en) 1997-11-19
WO1997041601A1 (en) 1997-11-06
US6031273A (en) 2000-02-29
KR100467117B1 (en) 2005-06-23
EP0896734A1 (en) 1999-02-17
EP0896734A4 (en) 1999-11-24
US5929636A (en) 1999-07-27
EP0896734B1 (en) 2006-04-05
KR20000065205A (en) 2000-11-06
CA2252926C (en) 2002-08-06
JP2002502549A (en) 2002-01-22

Similar Documents

Publication Publication Date Title
CA2252926A1 (en) All-metal, giant magnetoresistive, solid-state component
EP0803883B1 (en) Converter transformer
EP0831541A3 (en) Ferromagnetic tunnel junction, magnetoresistive element and magnetic head
EP1128557A3 (en) Switching circuit for generating pulsed power
AU8904891A (en) A power supply circuit with integrated magnetic components
TW344799B (en) Magnetic sensor utilizing impedance variation of a soft magnetic element in dependence upon a magnetic field strength and a method of manufacturing the same
WO2002078057A3 (en) A transpinnor-based sample-and-hold circuit and applications
FR2605453A1 (en) HIGH FREQUENCY TRANSFORMER WITH PRINTED CIRCUIT WINDING, PARTICULARLY FOR VERY HIGH VOLTAGE SUPPLY
CA2248399A1 (en) Compensation for power transfer systems using variable rotary transformer
AU4475093A (en) Modular multiple contact plug and/or modular multiple contact socket of plug connection devices for signal current systems, in particular for telecommunications and data communications
CA2246998A1 (en) Method of and device for automatically regulating three-phase voltage for power saving transformer
US8077004B2 (en) Electrical isolation device capable of limiting magnetic saturation even upon receipt of high power D.C. bias and, method for making the same and connector incorporating the same
WO2001033689A3 (en) A simplified current share circuit
EP0984462A3 (en) Electrical transformer
GB2235337A (en) Loop antenna
US6490180B2 (en) Arrangement for transferring a control signal in a transformer
US5225789A (en) Four quadrant current mode switching amplifier
EP1155919A3 (en) Electric power supply network, especially for a vehicule, and short-circuit detection process in this network
JPS59201682A (en) Inverter
EP1093181A3 (en) Nonreciprocal circuit device and communication device using same
JPH05103421A (en) Parallel operation connecting unit for ac power supply unit
WO1998049695A3 (en) Electric coupling device, electric circuit and method in connection therewith
EP0837586A3 (en) An off-hook signal and dial pulse generating circuit and a method for driving the same circuit
WO2003026131A3 (en) Standard cell arrangement for a magneto-resistive component
JP3405673B2 (en) Forward converter with multiple disparate power supplies

Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed
MKLA Lapsed

Effective date: 20060502

MKLA Lapsed

Effective date: 20060502

MKLA Lapsed

Effective date: 20060502