CA2312646A1 - Hybrid micropackaging of microdevices - Google Patents
Hybrid micropackaging of microdevices Download PDFInfo
- Publication number
- CA2312646A1 CA2312646A1 CA002312646A CA2312646A CA2312646A1 CA 2312646 A1 CA2312646 A1 CA 2312646A1 CA 002312646 A CA002312646 A CA 002312646A CA 2312646 A CA2312646 A CA 2312646A CA 2312646 A1 CA2312646 A1 CA 2312646A1
- Authority
- CA
- Canada
- Prior art keywords
- microdevices
- hybrid
- micropackaging
- wafer
- ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0077—Other packages not provided for in groups B81B7/0035 - B81B7/0074
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01032—Germanium [Ge]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Description
Hybrid Micropackaging of Microdevices A new approach to vacuum packaging of various microdevices, including bolometric FPAs, is being presented. This new, very small-size package structure consists of a central piece of machined ceramic or metal to which a small size window made of glass; ZnSe, Si or (3e and a microdevice in a die form are being attached using, for example, a soldering technique. The central part is equipped with a microchamber and a pump-out opening.
When the process of attaching the die and the window is completed, the air is pumped out from the microchamber via the opening and the opening is subsequently plugged.
Physical vapor deposition of the plugging material is suggested. Each die can be packaged separately and each package can be equipped with a dedicated application oriented window. Machinable ceramic materfals, such as Macor, are suggested for the package central part. The die is attached to the central part via a miniature spacer structure which can be produced by machining, electroplating or thin film deposition. This spacer is covered with the solder material.
In a different embodiment, the central package parts are machined in a ceramic wafer.
Then several possibly different windows are attached to the wafer.
Subsequently, the individual dies are attached to this wafer vis-~-vis the windows and the wafer, serving as a tray for the windows and the dies, is sawed into individual packaged devices.
Again, in a different embodiment, the central package parts are machined in a ceramic wafer and then the windows are attached to the ceramic wafer. The ceramic wafer is then attached to a semiconductor wafer in which the individual microdevices or dies have been previously produced. The semiconductor wafer is not sawed but it is in one piece. After attaching of the ceramic wafer to the semiconductor wafer, the vacuum pumping and the sealing operation is being performed on all devices. Then, the semiconductor and the ceramic wafers are sawed into separate individually vacuum packaged devices.
In each of the described embodiments, the semiconductor die is equipped with standard bonding pads or through-holes connected to bonding pads placed on the opposite surface of the die. In the first case, after completion of the packaging process, the packaged devices are connected to external electronics, typically using a standard wire bonding technique. In the case of the through-hole, the packaged device can be directly soldered to external electronics. Instead of producing the conducting through-holes in the semiconductor die, they can be produced in the ceramic central piece of the package.
These metallzed through-holes have to be connected by soldering or other methods to the bonding pads of the semiconductor die.
In each of the described embodiments, if a thermo-electric cooler is being used, it is placed outside the package attached directly to the packaged microdevice.
The hybrid micropackaging method and stnrctures are presented in the enclosed Figures.
When the process of attaching the die and the window is completed, the air is pumped out from the microchamber via the opening and the opening is subsequently plugged.
Physical vapor deposition of the plugging material is suggested. Each die can be packaged separately and each package can be equipped with a dedicated application oriented window. Machinable ceramic materfals, such as Macor, are suggested for the package central part. The die is attached to the central part via a miniature spacer structure which can be produced by machining, electroplating or thin film deposition. This spacer is covered with the solder material.
In a different embodiment, the central package parts are machined in a ceramic wafer.
Then several possibly different windows are attached to the wafer.
Subsequently, the individual dies are attached to this wafer vis-~-vis the windows and the wafer, serving as a tray for the windows and the dies, is sawed into individual packaged devices.
Again, in a different embodiment, the central package parts are machined in a ceramic wafer and then the windows are attached to the ceramic wafer. The ceramic wafer is then attached to a semiconductor wafer in which the individual microdevices or dies have been previously produced. The semiconductor wafer is not sawed but it is in one piece. After attaching of the ceramic wafer to the semiconductor wafer, the vacuum pumping and the sealing operation is being performed on all devices. Then, the semiconductor and the ceramic wafers are sawed into separate individually vacuum packaged devices.
In each of the described embodiments, the semiconductor die is equipped with standard bonding pads or through-holes connected to bonding pads placed on the opposite surface of the die. In the first case, after completion of the packaging process, the packaged devices are connected to external electronics, typically using a standard wire bonding technique. In the case of the through-hole, the packaged device can be directly soldered to external electronics. Instead of producing the conducting through-holes in the semiconductor die, they can be produced in the ceramic central piece of the package.
These metallzed through-holes have to be connected by soldering or other methods to the bonding pads of the semiconductor die.
In each of the described embodiments, if a thermo-electric cooler is being used, it is placed outside the package attached directly to the packaged microdevice.
The hybrid micropackaging method and stnrctures are presented in the enclosed Figures.
Claims
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA002312646A CA2312646A1 (en) | 2000-06-28 | 2000-06-28 | Hybrid micropackaging of microdevices |
US09/888,713 US6686653B2 (en) | 2000-06-28 | 2001-06-25 | Miniature microdevice package and process for making thereof |
PCT/CA2001/000939 WO2002001633A1 (en) | 2000-06-28 | 2001-06-27 | Miniature microdevice package and process for making thereof |
EP01949152A EP1295335B1 (en) | 2000-06-28 | 2001-06-27 | Miniature microdevice package and process for making same |
DE60103401T DE60103401D1 (en) | 2000-06-28 | 2001-06-27 | MINIATURE PACKAGING FOR MICRO DEVICES AND METHOD FOR THE PRODUCTION THEREOF |
CA002410430A CA2410430C (en) | 2000-06-28 | 2001-06-27 | Miniature microdevice package and process for making thereof |
AU2001270396A AU2001270396A1 (en) | 2000-06-28 | 2001-06-27 | Miniature microdevice package and process for making thereof |
US10/304,172 US7077969B2 (en) | 2000-06-28 | 2002-11-25 | Miniature microdevice package and process for making thereof |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US21443400P | 2000-06-28 | 2000-06-28 | |
CA002312646A CA2312646A1 (en) | 2000-06-28 | 2000-06-28 | Hybrid micropackaging of microdevices |
US09/888,713 US6686653B2 (en) | 2000-06-28 | 2001-06-25 | Miniature microdevice package and process for making thereof |
US10/304,172 US7077969B2 (en) | 2000-06-28 | 2002-11-25 | Miniature microdevice package and process for making thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
CA2312646A1 true CA2312646A1 (en) | 2001-12-28 |
Family
ID=29407855
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002312646A Abandoned CA2312646A1 (en) | 2000-06-28 | 2000-06-28 | Hybrid micropackaging of microdevices |
Country Status (5)
Country | Link |
---|---|
US (1) | US7077969B2 (en) |
EP (1) | EP1295335B1 (en) |
AU (1) | AU2001270396A1 (en) |
CA (1) | CA2312646A1 (en) |
WO (1) | WO2002001633A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112701211A (en) * | 2020-12-29 | 2021-04-23 | 上海烨映微电子科技股份有限公司 | Infrared thermopile packaging structure and method |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6635434B1 (en) | 1999-09-17 | 2003-10-21 | Exiqon A/S | Immunoassay for pesticides and their degradation products |
WO2003093167A1 (en) * | 2002-04-29 | 2003-11-13 | Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung | Device for protecting a chip and method for operating a chip |
US7276798B2 (en) * | 2002-05-23 | 2007-10-02 | Honeywell International Inc. | Integral topside vacuum package |
FR2841380A1 (en) * | 2002-06-25 | 2003-12-26 | Commissariat Energie Atomique | Encapsulation of an object under a controlled atmosphere in a cavity provided with a vent that is stopped with a porous material prior to final sealing |
US7274094B2 (en) * | 2002-08-28 | 2007-09-25 | Micron Technology, Inc. | Leadless packaging for image sensor devices |
US6872319B2 (en) * | 2002-09-30 | 2005-03-29 | Rockwell Scientific Licensing, Llc | Process for high yield fabrication of MEMS devices |
JP4342174B2 (en) | 2002-12-27 | 2009-10-14 | 新光電気工業株式会社 | Electronic device and manufacturing method thereof |
TWI284398B (en) * | 2004-03-26 | 2007-07-21 | Xintec Inc | Chip package structure and its wafer level package method |
EP1796707B1 (en) * | 2004-09-07 | 2011-12-28 | The Burnham Institute | Peptides that selectively home to heart vasculature and related conjugates and methods |
FR2879184B1 (en) * | 2004-12-15 | 2007-03-09 | Commissariat Energie Atomique | DEVICE AND METHOD FOR HERMETICALLY CLOSING A CAVITY OF AN ELECTRONIC COMPOUND. |
DE102005024512B3 (en) * | 2005-05-26 | 2007-02-08 | Jenoptik Laser, Optik, Systeme Gmbh | Method for producing window elements which can be soldered hermetically in a housing |
US20070004079A1 (en) * | 2005-06-30 | 2007-01-04 | Geefay Frank S | Method for making contact through via contact to an offset contactor inside a cap for the wafer level packaging of FBAR chips |
TWI267946B (en) * | 2005-08-22 | 2006-12-01 | Univ Nat Chiao Tung | Interconnection of group III-V semiconductor device and fabrication method for making the same |
KR20080048492A (en) * | 2005-08-24 | 2008-06-02 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | Light emitting diodes and lasers diodes with color converters |
DE102006058010B9 (en) * | 2006-12-08 | 2009-06-10 | Infineon Technologies Ag | Semiconductor device with cavity structure and manufacturing method |
US8390083B2 (en) * | 2009-09-04 | 2013-03-05 | Analog Devices, Inc. | System with recessed sensing or processing elements |
US8698322B2 (en) * | 2010-03-24 | 2014-04-15 | Oracle International Corporation | Adhesive-bonded substrates in a multi-chip module |
WO2012051340A1 (en) | 2010-10-12 | 2012-04-19 | Analog Devices, Inc. | Microphone package with embedded asic |
US8809117B2 (en) * | 2011-10-11 | 2014-08-19 | Taiwain Semiconductor Manufacturing Company, Ltd. | Packaging process tools and packaging methods for semiconductor devices |
WO2015046209A1 (en) * | 2013-09-27 | 2015-04-02 | 京セラ株式会社 | Lid body, package, and electronic apparatus |
US9847462B2 (en) | 2013-10-29 | 2017-12-19 | Point Engineering Co., Ltd. | Array substrate for mounting chip and method for manufacturing the same |
US9666558B2 (en) | 2015-06-29 | 2017-05-30 | Point Engineering Co., Ltd. | Substrate for mounting a chip and chip package using the substrate |
FR3065577B1 (en) * | 2017-04-25 | 2021-09-17 | Commissariat Energie Atomique | SEALING CELL AND METHOD FOR ENCAPSULATING A MICROELECTRONIC COMPONENT WITH SUCH A SEALING CELL |
TW202101406A (en) * | 2019-02-21 | 2021-01-01 | 加拿大商弗瑞爾公司 | Optoelectronic solid state array |
US11515273B2 (en) | 2019-07-26 | 2022-11-29 | Sandisk Technologies Llc | Bonded assembly containing oxidation barriers, hybrid bonding, or air gap, and methods of forming the same |
US11393780B2 (en) | 2019-07-26 | 2022-07-19 | Sandisk Technologies Llc | Bonded assembly containing oxidation barriers, hybrid bonding, or air gap, and methods of forming the same |
US11139272B2 (en) * | 2019-07-26 | 2021-10-05 | Sandisk Technologies Llc | Bonded assembly containing oxidation barriers and/or adhesion enhancers and methods of forming the same |
TW202215560A (en) * | 2020-07-15 | 2022-04-16 | 加拿大商弗瑞爾公司 | Cartridge for inspection |
Family Cites Families (16)
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US4701424A (en) | 1986-10-30 | 1987-10-20 | Ford Motor Company | Hermetic sealing of silicon |
US5196919A (en) * | 1990-12-07 | 1993-03-23 | Kyocera America, Inc. | Use of a contamination shield during the manufacture of semiconductor packages |
DE69313337T2 (en) | 1992-04-17 | 1998-01-02 | Terumo Corp | Infrared sensor and method for its manufacture |
CA2117476C (en) | 1992-06-19 | 2000-02-22 | R. Andrew Wood | Infrared camera with thermoelectric temperature stabilization |
JPH09506712A (en) * | 1993-12-13 | 1997-06-30 | ハネウエル・インコーポレーテッド | Integrated Silicon Vacuum Micro Package for Infrared Devices |
US5459351A (en) | 1994-06-29 | 1995-10-17 | Honeywell Inc. | Apparatus for mounting an absolute pressure sensor |
US5528452A (en) | 1994-11-22 | 1996-06-18 | Case Western Reserve University | Capacitive absolute pressure sensor |
US5766975A (en) * | 1995-01-09 | 1998-06-16 | Integrated Device Technology, Inc. | Packaged integrated circuit having thermal enhancement and reduced footprint size |
US5729019A (en) | 1995-12-29 | 1998-03-17 | Honeywell Inc. | Split field-of-view uncooled infrared sensor |
US5914488A (en) * | 1996-03-05 | 1999-06-22 | Mitsubishi Denki Kabushiki Kaisha | Infrared detector |
EP0851492A3 (en) * | 1996-12-06 | 1998-12-16 | Texas Instruments Incorporated | Surface-mounted substrate structure and method |
AU5186098A (en) * | 1996-12-17 | 1998-07-15 | Laboratorium Fur Physikalische Elektronik Institut Fur Quantenelektronik | Method for applying a microsystem or a converter on a substrate, and device manufactured accordingly |
US6036872A (en) * | 1998-03-31 | 2000-03-14 | Honeywell Inc. | Method for making a wafer-pair having sealed chambers |
US6062461A (en) | 1998-06-03 | 2000-05-16 | Delphi Technologies, Inc. | Process for bonding micromachined wafers using solder |
FR2780200B1 (en) * | 1998-06-22 | 2003-09-05 | Commissariat Energie Atomique | DEVICE AND METHOD FOR FORMING A DEVICE HAVING A CONTROLLED ATMOSPHERE CAVITY |
US6479320B1 (en) * | 2000-02-02 | 2002-11-12 | Raytheon Company | Vacuum package fabrication of microelectromechanical system devices with integrated circuit components |
-
2000
- 2000-06-28 CA CA002312646A patent/CA2312646A1/en not_active Abandoned
-
2001
- 2001-06-27 EP EP01949152A patent/EP1295335B1/en not_active Expired - Lifetime
- 2001-06-27 AU AU2001270396A patent/AU2001270396A1/en not_active Abandoned
- 2001-06-27 WO PCT/CA2001/000939 patent/WO2002001633A1/en active IP Right Grant
-
2002
- 2002-11-25 US US10/304,172 patent/US7077969B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112701211A (en) * | 2020-12-29 | 2021-04-23 | 上海烨映微电子科技股份有限公司 | Infrared thermopile packaging structure and method |
CN112701211B (en) * | 2020-12-29 | 2023-04-28 | 上海烨映微电子科技股份有限公司 | Infrared thermopile packaging structure and method |
Also Published As
Publication number | Publication date |
---|---|
US7077969B2 (en) | 2006-07-18 |
EP1295335A1 (en) | 2003-03-26 |
EP1295335B1 (en) | 2004-05-19 |
US20030111441A1 (en) | 2003-06-19 |
AU2001270396A1 (en) | 2002-01-08 |
WO2002001633A1 (en) | 2002-01-03 |
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