CA2319430A1 - A method for generating electrical conducting or semiconducting structures in two or three dimensions, a method for erasing the same structures and an electric field generator/modulator for use with the method for generating - Google Patents
A method for generating electrical conducting or semiconducting structures in two or three dimensions, a method for erasing the same structures and an electric field generator/modulator for use with the method for generating Download PDFInfo
- Publication number
- CA2319430A1 CA2319430A1 CA002319430A CA2319430A CA2319430A1 CA 2319430 A1 CA2319430 A1 CA 2319430A1 CA 002319430 A CA002319430 A CA 002319430A CA 2319430 A CA2319430 A CA 2319430A CA 2319430 A1 CA2319430 A1 CA 2319430A1
- Authority
- CA
- Canada
- Prior art keywords
- structures
- electric field
- matrix
- electrical conducting
- dimensions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title abstract 5
- 230000005684 electric field Effects 0.000 title abstract 4
- 239000000463 material Substances 0.000 abstract 7
- 239000011159 matrix material Substances 0.000 abstract 4
- 238000000059 patterning Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8221—Three dimensional integrated circuits stacked in different levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/50—Forming devices by joining two substrates together, e.g. lamination techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76888—By rendering at least a portion of the conductor non conductive, e.g. oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
- H01L21/76894—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern using a laser, e.g. laser cutting, laser direct writing, laser repair
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
In a method for generating electrical conducting or semiconducting structures in three dimensions in a matrix which comprises two or more materials in spatially separated material structures, an electric field is applied to the separate material structure or the field-modulated spatially according to a protocol which represents a predetermined pattern of electrical conducting or semiconducting structures which are generated in the material structure in response to the field. The matrix composed by the material structures will hence comprise structures of this kind in three dimensions. In a method for global erasing an electric field is applied to the matrix until the materials in the matrix in response to the field in their entirety arrive in a non-conducting state. In an electric field generator/modulator (EFGM) which can be used for patterning and generating electrical conducting or semiconducting structures, two electrode means (E1;E2) comprise parallel strip electrodes (21;22) provided mutually spaced apart in parallel planes such that the electrodes (21, 22) form a matrix-like arrangement. The electrode means (E1;E2) are over cross-connection devices (24, 25) connected with a power supply (23). EFGM (20) is adapted for receiving a thin-film material between the electrode devices (E1, E2) in order to generate said structures.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NO19980385 | 1998-01-28 | ||
NO980385A NO980385D0 (en) | 1998-01-28 | 1998-01-28 | Circuits generated by in situ conversion |
NO19982518 | 1998-06-02 | ||
NO982518A NO308149B1 (en) | 1998-06-02 | 1998-06-02 | Scalable, integrated data processing device |
PCT/NO1999/000022 WO1999044229A1 (en) | 1998-01-28 | 1999-01-28 | A method for generating electrical conducting or semiconducting structures in two or three dimensions, a method for erasing the same structures and an electric field generator/modulator for use with the method for generating |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2319430A1 true CA2319430A1 (en) | 1999-09-02 |
CA2319430C CA2319430C (en) | 2004-05-11 |
Family
ID=26648814
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002319430A Expired - Fee Related CA2319430C (en) | 1998-01-28 | 1999-01-28 | A method for generating electrical conducting or semiconducting structures in two or three dimensions, a method for erasing the same structures and an electric field generator/modulator for use with the method for generating |
CA002319428A Expired - Fee Related CA2319428C (en) | 1998-01-28 | 1999-01-28 | A method for generation of electrical conducting or semiconducting structures in three dimensions and methods for erasure of the same structures |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002319428A Expired - Fee Related CA2319428C (en) | 1998-01-28 | 1999-01-28 | A method for generation of electrical conducting or semiconducting structures in three dimensions and methods for erasure of the same structures |
Country Status (12)
Country | Link |
---|---|
US (3) | US6432739B1 (en) |
EP (2) | EP1051741A1 (en) |
JP (2) | JP4272353B2 (en) |
KR (2) | KR100375392B1 (en) |
CN (2) | CN1187793C (en) |
AT (1) | ATE377842T1 (en) |
AU (2) | AU739848B2 (en) |
CA (2) | CA2319430C (en) |
DE (1) | DE69937485T2 (en) |
HK (2) | HK1035602A1 (en) |
RU (2) | RU2183882C2 (en) |
WO (2) | WO1999045582A1 (en) |
Families Citing this family (131)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6859548B2 (en) | 1996-09-25 | 2005-02-22 | Kabushiki Kaisha Toshiba | Ultrasonic picture processing method and ultrasonic picture processing apparatus |
AU6365900A (en) | 1999-07-21 | 2001-02-13 | E-Ink Corporation | Use of a storage capacitor to enhance the performance of an active matrix drivenelectronic display |
AU7091400A (en) | 1999-08-31 | 2001-03-26 | E-Ink Corporation | Transistor for an electronically driven display |
JP2003513475A (en) * | 1999-11-02 | 2003-04-08 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Method of forming vertical interconnects between thin film microelectronic devices and articles with such vertical interconnects |
EP1136942A1 (en) * | 2000-03-22 | 2001-09-26 | Infineon Technologies AG | Circuit assembly for protection of a circuit against analysis and manipulation |
US7893435B2 (en) | 2000-04-18 | 2011-02-22 | E Ink Corporation | Flexible electronic circuits and displays including a backplane comprising a patterned metal foil having a plurality of apertures extending therethrough |
JP2004506985A (en) * | 2000-08-18 | 2004-03-04 | シーメンス アクチエンゲゼルシヤフト | Encapsulated organic electronic component, method of manufacture and use thereof |
JP2004507096A (en) * | 2000-08-18 | 2004-03-04 | シーメンス アクチエンゲゼルシヤフト | Organic field effect transistor (OFET), method of manufacturing the organic field effect transistor, integrated circuit formed from the organic field effect transistor, and use of the integrated circuit |
KR100394028B1 (en) * | 2000-12-28 | 2003-08-06 | 엘지.필립스 엘시디 주식회사 | Liquid crystal display device and method for manufacturing the same |
DE10043204A1 (en) * | 2000-09-01 | 2002-04-04 | Siemens Ag | Organic field-effect transistor, method for structuring an OFET and integrated circuit |
DE10044842A1 (en) * | 2000-09-11 | 2002-04-04 | Siemens Ag | Organic rectifier, circuit, RFID tag and use of an organic rectifier |
EP1323195A1 (en) * | 2000-09-22 | 2003-07-02 | Siemens Aktiengesellschaft | Electrode and/or conductor track for organic components and production method therefor |
DE10061299A1 (en) * | 2000-12-08 | 2002-06-27 | Siemens Ag | Device for determining and / or forwarding at least one environmental influence, production method and use thereof |
DE10061297C2 (en) * | 2000-12-08 | 2003-05-28 | Siemens Ag | Procedure for structuring an OFET |
DE10063721A1 (en) * | 2000-12-20 | 2002-07-11 | Merck Patent Gmbh | Organic semiconductor, manufacturing process therefor and uses |
DE10105914C1 (en) * | 2001-02-09 | 2002-10-10 | Siemens Ag | Organic field effect transistor with photo-structured gate dielectric and a method for its production |
WO2002078052A2 (en) * | 2001-03-26 | 2002-10-03 | Siemens Aktiengesellschaft | Device with at least two organic electronic components and method for producing the same |
DE60233486D1 (en) | 2001-05-07 | 2009-10-08 | Advanced Micro Devices Inc | FLOATING GATE MEMORY BUILDING PART USING COMPOUND MOLECULAR MATERIAL |
US6873540B2 (en) * | 2001-05-07 | 2005-03-29 | Advanced Micro Devices, Inc. | Molecular memory cell |
US6781868B2 (en) * | 2001-05-07 | 2004-08-24 | Advanced Micro Devices, Inc. | Molecular memory device |
JP4731794B2 (en) * | 2001-05-07 | 2011-07-27 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | Switch element having memory effect and method for switching the element |
CN100403450C (en) * | 2001-05-07 | 2008-07-16 | 先进微装置公司 | Memory device with self-assembled polymer film and method of making the same |
WO2002091496A2 (en) * | 2001-05-07 | 2002-11-14 | Advanced Micro Devices, Inc. | Reversible field-programmable electric interconnects |
US6756620B2 (en) * | 2001-06-29 | 2004-06-29 | Intel Corporation | Low-voltage and interface damage-free polymer memory device |
WO2003009359A1 (en) * | 2001-07-16 | 2003-01-30 | Boris Aronovich Gurovich | Method for forming a multilayer structure provided with predetermined parameters |
US6624457B2 (en) | 2001-07-20 | 2003-09-23 | Intel Corporation | Stepped structure for a multi-rank, stacked polymer memory device and method of making same |
US6838720B2 (en) * | 2001-08-13 | 2005-01-04 | Advanced Micro Devices, Inc. | Memory device with active passive layers |
US6806526B2 (en) | 2001-08-13 | 2004-10-19 | Advanced Micro Devices, Inc. | Memory device |
US6858481B2 (en) | 2001-08-13 | 2005-02-22 | Advanced Micro Devices, Inc. | Memory device with active and passive layers |
US6768157B2 (en) | 2001-08-13 | 2004-07-27 | Advanced Micro Devices, Inc. | Memory device |
CN100419906C (en) | 2001-08-13 | 2008-09-17 | 先进微装置公司 | Memory cell |
DE10151036A1 (en) * | 2001-10-16 | 2003-05-08 | Siemens Ag | Isolator for an organic electronic component |
DE10151440C1 (en) | 2001-10-18 | 2003-02-06 | Siemens Ag | Organic electronic component for implementing an encapsulated partially organic electronic component has components like a flexible foil as an antenna, a diode or capacitor and an organic transistor. |
DE10160732A1 (en) * | 2001-12-11 | 2003-06-26 | Siemens Ag | OFET used e.g. in RFID tag, comprises an intermediate layer on an active semiconductor layer |
KR100433407B1 (en) * | 2002-02-06 | 2004-05-31 | 삼성광주전자 주식회사 | Upright-type vacuum cleaner |
DE10212640B4 (en) * | 2002-03-21 | 2004-02-05 | Siemens Ag | Logical components made of organic field effect transistors |
DE10212639A1 (en) * | 2002-03-21 | 2003-10-16 | Siemens Ag | Device and method for laser structuring functional polymers and uses |
RU2205469C1 (en) * | 2002-04-18 | 2003-05-27 | Гурович Борис Аронович | Method for producing three-dimensional conducting structure |
DE10226370B4 (en) * | 2002-06-13 | 2008-12-11 | Polyic Gmbh & Co. Kg | Substrate for an electronic component, use of the substrate, methods for increasing the charge carrier mobility and organic field effect transistor (OFET) |
US6661024B1 (en) * | 2002-07-02 | 2003-12-09 | Motorola, Inc. | Integrated circuit including field effect transistor and method of manufacture |
EP1525630A2 (en) * | 2002-07-29 | 2005-04-27 | Siemens Aktiengesellschaft | Electronic component comprising predominantly organic functional materials and method for the production thereof |
DE50309888D1 (en) * | 2002-08-08 | 2008-07-03 | Polyic Gmbh & Co Kg | ELECTRONIC DEVICE |
DE50306683D1 (en) | 2002-08-23 | 2007-04-12 | Polyic Gmbh & Co Kg | ORGANIC COMPONENT FOR OVERVOLTAGE PROTECTION AND ASSOCIATED CIRCUIT |
US7012276B2 (en) * | 2002-09-17 | 2006-03-14 | Advanced Micro Devices, Inc. | Organic thin film Zener diodes |
WO2004032257A2 (en) | 2002-10-02 | 2004-04-15 | Leonhard Kurz Gmbh & Co. Kg | Film comprising organic semiconductors |
US6870183B2 (en) | 2002-11-04 | 2005-03-22 | Advanced Micro Devices, Inc. | Stacked organic memory devices and methods of operating and fabricating |
WO2004042837A2 (en) * | 2002-11-05 | 2004-05-21 | Siemens Aktiengesellschaft | Organic electronic component with high-resolution structuring and method for the production thereof |
DE10253154A1 (en) * | 2002-11-14 | 2004-05-27 | Siemens Ag | Biosensor, used to identify analyte in liquid sample, has test field with detector, where detector registers field changes as electrical signals for evaluation |
WO2004047144A2 (en) * | 2002-11-19 | 2004-06-03 | Polyic Gmbh & Co.Kg | Organic electronic component comprising a structured, semi-conductive functional layer and a method for producing said component |
US20060035423A1 (en) * | 2002-11-19 | 2006-02-16 | Walter Fix | Organic electronic component comprising the same organic material for at least two functional layers |
US6905908B2 (en) * | 2002-12-26 | 2005-06-14 | Motorola, Inc. | Method of fabricating organic field effect transistors |
DE10300521A1 (en) * | 2003-01-09 | 2004-07-22 | Siemens Ag | Organoresistive memory |
DE10302149A1 (en) * | 2003-01-21 | 2005-08-25 | Siemens Ag | Use of conductive carbon black / graphite blends for the production of low-cost electronics |
EP1586127B1 (en) * | 2003-01-21 | 2007-05-02 | PolyIC GmbH & Co. KG | Organic electronic component and method for producing organic electronic devices |
CA2515614A1 (en) * | 2003-01-29 | 2004-08-12 | Polyic Gmbh & Co. Kg | Organic storage component and corresponding triggering circuit |
JP2004311845A (en) * | 2003-04-09 | 2004-11-04 | National Institute Of Advanced Industrial & Technology | Visible-ray transmitting structure having power generating function |
US7049153B2 (en) * | 2003-04-23 | 2006-05-23 | Micron Technology, Inc. | Polymer-based ferroelectric memory |
JP4583004B2 (en) * | 2003-05-21 | 2010-11-17 | 株式会社 日立ディスプレイズ | Manufacturing method of active matrix substrate |
DE10330064B3 (en) * | 2003-07-03 | 2004-12-09 | Siemens Ag | Organic logic gate has load field effect transistor with potential-free gate electrode in series with switching field effect transistor |
DE10330062A1 (en) * | 2003-07-03 | 2005-01-27 | Siemens Ag | Method and device for structuring organic layers |
RU2243613C1 (en) * | 2003-07-16 | 2004-12-27 | Гурович Борис Аронович | Method for bulk structure production |
DE10338277A1 (en) * | 2003-08-20 | 2005-03-17 | Siemens Ag | Organic capacitor with voltage controlled capacity |
DE10339036A1 (en) | 2003-08-25 | 2005-03-31 | Siemens Ag | Organic electronic component with high-resolution structuring and manufacturing method |
DE10340643B4 (en) * | 2003-09-03 | 2009-04-16 | Polyic Gmbh & Co. Kg | Printing method for producing a double layer for polymer electronics circuits, and thereby produced electronic component with double layer |
DE10340644B4 (en) * | 2003-09-03 | 2010-10-07 | Polyic Gmbh & Co. Kg | Mechanical controls for organic polymer electronics |
WO2005031890A1 (en) * | 2003-09-24 | 2005-04-07 | E.I. Dupont De Nemours And Company | Process for laminating a dielectric layer onto a semiconductor |
JP4729843B2 (en) * | 2003-10-15 | 2011-07-20 | 凸版印刷株式会社 | Thin film transistor manufacturing method |
DE10349963A1 (en) | 2003-10-24 | 2005-06-02 | Leonhard Kurz Gmbh & Co. Kg | Process for producing a film |
DE102004002024A1 (en) * | 2004-01-14 | 2005-08-11 | Siemens Ag | Self-aligning gate organic transistor and method of making the same |
JP4501444B2 (en) * | 2004-02-04 | 2010-07-14 | ソニー株式会社 | Method of forming wiring structure in transistor and method of manufacturing field effect transistor |
EP1738407B1 (en) | 2004-04-20 | 2014-03-26 | Visualsonics Inc. | Arrayed ultrasonic transducer |
US7122489B2 (en) * | 2004-05-12 | 2006-10-17 | Matsushita Electric Industrial Co., Ltd. | Manufacturing method of composite sheet material using ultrafast laser pulses |
US7374102B2 (en) * | 2004-05-14 | 2008-05-20 | Wavezero, Inc. | Radiofrequency antennae and identification tags and methods of manufacturing radiofrequency antennae and radiofrequency identification tags |
US7019328B2 (en) * | 2004-06-08 | 2006-03-28 | Palo Alto Research Center Incorporated | Printed transistors |
GB0413749D0 (en) * | 2004-06-19 | 2004-07-21 | Koninkl Philips Electronics Nv | Active matrix electronic array device |
DE102004040831A1 (en) * | 2004-08-23 | 2006-03-09 | Polyic Gmbh & Co. Kg | Radio-tag compatible outer packaging |
RU2284267C2 (en) * | 2004-11-10 | 2006-09-27 | Броня Цой | Material for the components of the radio-electronic devices |
DE102004059467A1 (en) * | 2004-12-10 | 2006-07-20 | Polyic Gmbh & Co. Kg | Gate made of organic field effect transistors |
DE102004059464A1 (en) * | 2004-12-10 | 2006-06-29 | Polyic Gmbh & Co. Kg | Electronic component with modulator |
DE102004059465A1 (en) * | 2004-12-10 | 2006-06-14 | Polyic Gmbh & Co. Kg | recognition system |
DE102004063435A1 (en) | 2004-12-23 | 2006-07-27 | Polyic Gmbh & Co. Kg | Organic rectifier |
DE102005009820A1 (en) * | 2005-03-01 | 2006-09-07 | Polyic Gmbh & Co. Kg | Electronic assembly with organic logic switching elements |
DE102005009819A1 (en) | 2005-03-01 | 2006-09-07 | Polyic Gmbh & Co. Kg | electronics assembly |
DE102005017655B4 (en) * | 2005-04-15 | 2008-12-11 | Polyic Gmbh & Co. Kg | Multilayer composite body with electronic function |
KR100719346B1 (en) * | 2005-04-19 | 2007-05-17 | 삼성전자주식회사 | Resistive memory cell, method for forming the same and resistive memory array using the same |
US7420442B1 (en) * | 2005-06-08 | 2008-09-02 | Sandia Corporation | Micromachined microwave signal control device and method for making same |
NO20052904L (en) * | 2005-06-14 | 2006-12-15 | Thin Film Electronics Asa | A non-volatile electrical memory system |
DE102005031448A1 (en) | 2005-07-04 | 2007-01-11 | Polyic Gmbh & Co. Kg | Activatable optical layer |
DE602005023597D1 (en) * | 2005-07-08 | 2010-10-28 | St Microelectronics Srl | Method for realizing an electrical connection in a semiconductor electronic device between a nanometric circuit architecture and standard electronic components |
DE102005035590A1 (en) * | 2005-07-29 | 2007-02-01 | Polyic Gmbh & Co. Kg | Electronic component has flexible substrate and stack of layers including function layer on substratesurface |
DE102005035589A1 (en) | 2005-07-29 | 2007-02-01 | Polyic Gmbh & Co. Kg | Manufacturing electronic component on surface of substrate where component has two overlapping function layers |
DE102005042166A1 (en) * | 2005-09-06 | 2007-03-15 | Polyic Gmbh & Co.Kg | Organic device and such a comprehensive electrical circuit |
DE102005044306A1 (en) * | 2005-09-16 | 2007-03-22 | Polyic Gmbh & Co. Kg | Electronic circuit and method for producing such |
JP5630958B2 (en) | 2005-11-02 | 2014-11-26 | ビジュアルソニックス インコーポレイテッド | High frequency array ultrasound system |
JP2007252249A (en) * | 2006-03-22 | 2007-10-04 | Oki Electric Ind Co Ltd | Apparatus for synthesizing organic compound, light irradiation apparatus, substrate for synthesizing organic compound and method for synthesizing organic compound |
US20070279230A1 (en) * | 2006-06-01 | 2007-12-06 | Wavezero, Inc. | System and Method for Attaching Radiofrequency Identification Chips to Metalized Antenna |
JP2008021814A (en) * | 2006-07-13 | 2008-01-31 | Hitachi Ltd | Field-effect transistor, organic thin film transistor, and method of manufacturing organic transistor |
TWI300251B (en) * | 2006-07-14 | 2008-08-21 | Ind Tech Res Inst | Manufacturing method of vertical thin film transistor |
US7851786B2 (en) * | 2006-09-01 | 2010-12-14 | Alcatel-Lucent Usa Inc. | Programmable polyelectrolyte electrical switches |
JP5250981B2 (en) * | 2007-02-21 | 2013-07-31 | セイコーエプソン株式会社 | Organic device manufacturing method and electronic device |
WO2009067577A1 (en) * | 2007-11-21 | 2009-05-28 | The Board Of Trustees Of The Leland Stanford Junior University. | Patterning of organic semiconductor materials |
EP3309823B1 (en) * | 2008-09-18 | 2020-02-12 | FUJIFILM SonoSite, Inc. | Ultrasound transducers |
US9173047B2 (en) | 2008-09-18 | 2015-10-27 | Fujifilm Sonosite, Inc. | Methods for manufacturing ultrasound transducers and other components |
US9184369B2 (en) | 2008-09-18 | 2015-11-10 | Fujifilm Sonosite, Inc. | Methods for manufacturing ultrasound transducers and other components |
US10441185B2 (en) * | 2009-12-16 | 2019-10-15 | The Board Of Trustees Of The University Of Illinois | Flexible and stretchable electronic systems for epidermal electronics |
KR20120103651A (en) * | 2009-12-23 | 2012-09-19 | 아이엠알에이 아메리카, 인코포레이티드. | Laser patterning using a structured optical element and focused beam |
US8656333B1 (en) * | 2010-02-16 | 2014-02-18 | Deca Technologies, Inc. | Integrated circuit package auto-routing |
US8799845B2 (en) | 2010-02-16 | 2014-08-05 | Deca Technologies Inc. | Adaptive patterning for panelized packaging |
US9196509B2 (en) | 2010-02-16 | 2015-11-24 | Deca Technologies Inc | Semiconductor device and method of adaptive patterning for panelized packaging |
US20110266436A1 (en) * | 2010-04-29 | 2011-11-03 | Battelle Energy Alliance, Llc | Apparatuses and methods for forming electromagnetic fields |
US8502159B2 (en) * | 2010-04-29 | 2013-08-06 | Battelle Energy Alliance, Llc | Apparatuses and methods for generating electric fields |
RU2461151C1 (en) * | 2011-01-25 | 2012-09-10 | Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский ядерный университет "МИФИ" (НИЯУ МИФИ) | Ion diode for generating neutrons |
RU2479890C1 (en) * | 2011-12-07 | 2013-04-20 | Открытое акционерное общество "Научно-исследовательский институт полупроводникового машиностроения" | Cassette for photoconverter process satellites |
JP6105266B2 (en) | 2011-12-15 | 2017-03-29 | 株式会社半導体エネルギー研究所 | Storage device |
KR102433736B1 (en) | 2012-01-23 | 2022-08-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device |
JP2013161878A (en) * | 2012-02-02 | 2013-08-19 | Renesas Electronics Corp | Semiconductor device and semiconductor device manufacturing method |
US8753904B2 (en) * | 2012-06-07 | 2014-06-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for semiconductor device pattern loading effect characterization |
US9482518B2 (en) | 2012-06-07 | 2016-11-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Systems and methods for semiconductor device process determination using reflectivity measurement |
RU2504046C1 (en) * | 2012-07-12 | 2014-01-10 | Открытое акционерное общество "Концерн радиостроения "Вега" | Method to produce interconnections in high-density electronic modules |
CN103338596A (en) * | 2013-06-18 | 2013-10-02 | 华南理工大学 | Manufacturing method of whole addition circuit board without photoresist |
US9040316B1 (en) | 2014-06-12 | 2015-05-26 | Deca Technologies Inc. | Semiconductor device and method of adaptive patterning for panelized packaging with dynamic via clipping |
CN104282250B (en) * | 2014-10-24 | 2016-08-31 | 深圳市华星光电技术有限公司 | In TFT MIS structure design control method and system |
JP6504497B2 (en) * | 2015-03-04 | 2019-04-24 | 株式会社アルバック | Touch panel and transparent conductive substrate |
CN105353590B (en) * | 2015-12-11 | 2018-01-02 | 中国电子科技集团公司第四十一研究所 | The exposure method of photoresist and substrate bearing device in thin film circuit plated through-hole |
US10157803B2 (en) | 2016-09-19 | 2018-12-18 | Deca Technologies Inc. | Semiconductor device and method of unit specific progressive alignment |
US10573601B2 (en) | 2016-09-19 | 2020-02-25 | Deca Technologies Inc. | Semiconductor device and method of unit specific progressive alignment |
CN109216370B (en) * | 2017-06-29 | 2022-12-06 | 爱思开海力士有限公司 | Memory device performing UV assisted erase operation |
RU185725U1 (en) * | 2018-07-02 | 2018-12-17 | федеральное государственное бюджетное научное учреждение "Научно-исследовательский институт перспективных материалов и технологий" | MICROWAVE DEVICE FOR THERMAL PROCESSING OF POLYMER COMPOSITE MATERIALS |
RU2700231C1 (en) * | 2018-10-24 | 2019-09-13 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" | Method of forming three-dimensional structures of functional layer topological elements on the surface of substrates |
WO2020208358A1 (en) * | 2019-04-12 | 2020-10-15 | Queen Mary University Of London | Radiation detector |
CN113179605B (en) * | 2021-05-14 | 2023-06-13 | Oppo广东移动通信有限公司 | Shell, manufacturing method thereof, wearable device and electronic device |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4371883A (en) * | 1980-03-14 | 1983-02-01 | The Johns Hopkins University | Current controlled bistable electrical organic thin film switching device |
US4507672A (en) * | 1980-03-14 | 1985-03-26 | The Johns Hopkins University | Method of fabricating a current controlled bistable electrical organic thin film switching device |
US5407851A (en) * | 1981-02-23 | 1995-04-18 | Unisys Corporation | Method of fabricating an electrically alterable resistive component on an insulating layer above a semiconductor substrate |
US4825408A (en) * | 1984-04-25 | 1989-04-25 | The Johns Hopkins University | Multistate optical switching and memory apparatus using an amphoteric organic charge transfer material |
IL86162A (en) * | 1988-04-25 | 1991-11-21 | Zvi Orbach | Customizable semiconductor devices |
US5427941A (en) | 1985-08-08 | 1995-06-27 | Schering Corporation | Actinomadura brunnea var. antibiotica strains |
KR900008647B1 (en) * | 1986-03-20 | 1990-11-26 | 후지쓰 가부시끼가이샤 | A method for manufacturing three demensional i.c. |
EP0263574A1 (en) * | 1986-09-08 | 1988-04-13 | THORN EMI North America Inc. | A method of manufacturing a semiconductor device, and a semiconductor device, having at least one selectively actuable conductive line |
US4806995A (en) * | 1987-02-02 | 1989-02-21 | Olin Corporation | Optical and electrical switching devices and a polymer composition containing pendant organic charge transfer salt moieties useful in switching devices |
EP0344346B1 (en) * | 1988-06-01 | 1995-04-26 | Texas Instruments Incorporated | Optical switching device |
JPH07103190B2 (en) * | 1989-02-15 | 1995-11-08 | 松下電器産業株式会社 | Organic conductive thin film and manufacturing method thereof |
US5043251A (en) | 1989-11-29 | 1991-08-27 | The United States Of America As Represented By The Secretary Of The Navy | Process of three dimensional lithography in amorphous polymers |
US5689428A (en) * | 1990-09-28 | 1997-11-18 | Texas Instruments Incorporated | Integrated circuits, transistors, data processing systems, printed wiring boards, digital computers, smart power devices, and processes of manufacture |
US5282312A (en) * | 1991-12-31 | 1994-02-01 | Tessera, Inc. | Multi-layer circuit construction methods with customization features |
US5378916A (en) * | 1993-02-17 | 1995-01-03 | Xerox Corporation | Color imaging charge-coupled array with multiple photosensitive regions |
US5427841A (en) | 1993-03-09 | 1995-06-27 | U.S. Philips Corporation | Laminated structure of a metal layer on a conductive polymer layer and method of manufacturing such a structure |
ATE171560T1 (en) | 1993-03-09 | 1998-10-15 | Koninkl Philips Electronics Nv | PROCESS FOR PRODUCING A PATTERN OF AN ELECTRICALLY CONDUCTIVE POLYMER ON A SUBSTRATE SURFACE AND METALIZATION OF SUCH A PATTERN |
US5567550A (en) | 1993-03-25 | 1996-10-22 | Texas Instruments Incorporated | Method of making a mask for making integrated circuits |
CA2173123A1 (en) | 1993-09-30 | 1995-04-06 | Paul M. Zavracky | Three-dimensional processor using transferred thin film circuits |
US5808351A (en) | 1994-02-08 | 1998-09-15 | Prolinx Labs Corporation | Programmable/reprogramable structure using fuses and antifuses |
US5537108A (en) | 1994-02-08 | 1996-07-16 | Prolinx Labs Corporation | Method and structure for programming fuses |
US5572409A (en) * | 1994-02-08 | 1996-11-05 | Prolinx Labs Corporation | Apparatus including a programmable socket adapter for coupling an electronic component to a component socket on a printed circuit board |
JP3770631B2 (en) * | 1994-10-24 | 2006-04-26 | 株式会社ルネサステクノロジ | Manufacturing method of semiconductor device |
US5703394A (en) * | 1996-06-10 | 1997-12-30 | Motorola | Integrated electro-optical package |
WO1999010939A2 (en) * | 1997-08-22 | 1999-03-04 | Koninklijke Philips Electronics N.V. | A method of manufacturing a field-effect transistor substantially consisting of organic materials |
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