CA2319430A1 - A method for generating electrical conducting or semiconducting structures in two or three dimensions, a method for erasing the same structures and an electric field generator/modulator for use with the method for generating - Google Patents

A method for generating electrical conducting or semiconducting structures in two or three dimensions, a method for erasing the same structures and an electric field generator/modulator for use with the method for generating Download PDF

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Publication number
CA2319430A1
CA2319430A1 CA002319430A CA2319430A CA2319430A1 CA 2319430 A1 CA2319430 A1 CA 2319430A1 CA 002319430 A CA002319430 A CA 002319430A CA 2319430 A CA2319430 A CA 2319430A CA 2319430 A1 CA2319430 A1 CA 2319430A1
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CA
Canada
Prior art keywords
structures
electric field
matrix
electrical conducting
dimensions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002319430A
Other languages
French (fr)
Other versions
CA2319430C (en
Inventor
Per-Erik Nordal
Geirr I. Leistad
Hans Gude Gudesen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ensurge Micropower ASA
Original Assignee
Thin Film Electronics Asa
Per-Erik Nordal
Geirr I. Leistad
Hans Gude Gudesen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NO980385A external-priority patent/NO980385D0/en
Priority claimed from NO982518A external-priority patent/NO308149B1/en
Application filed by Thin Film Electronics Asa, Per-Erik Nordal, Geirr I. Leistad, Hans Gude Gudesen filed Critical Thin Film Electronics Asa
Publication of CA2319430A1 publication Critical patent/CA2319430A1/en
Application granted granted Critical
Publication of CA2319430C publication Critical patent/CA2319430C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8221—Three dimensional integrated circuits stacked in different levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/50—Forming devices by joining two substrates together, e.g. lamination techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76888—By rendering at least a portion of the conductor non conductive, e.g. oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
    • H01L21/76894—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern using a laser, e.g. laser cutting, laser direct writing, laser repair
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

In a method for generating electrical conducting or semiconducting structures in three dimensions in a matrix which comprises two or more materials in spatially separated material structures, an electric field is applied to the separate material structure or the field-modulated spatially according to a protocol which represents a predetermined pattern of electrical conducting or semiconducting structures which are generated in the material structure in response to the field. The matrix composed by the material structures will hence comprise structures of this kind in three dimensions. In a method for global erasing an electric field is applied to the matrix until the materials in the matrix in response to the field in their entirety arrive in a non-conducting state. In an electric field generator/modulator (EFGM) which can be used for patterning and generating electrical conducting or semiconducting structures, two electrode means (E1;E2) comprise parallel strip electrodes (21;22) provided mutually spaced apart in parallel planes such that the electrodes (21, 22) form a matrix-like arrangement. The electrode means (E1;E2) are over cross-connection devices (24, 25) connected with a power supply (23). EFGM (20) is adapted for receiving a thin-film material between the electrode devices (E1, E2) in order to generate said structures.
CA002319430A 1998-01-28 1999-01-28 A method for generating electrical conducting or semiconducting structures in two or three dimensions, a method for erasing the same structures and an electric field generator/modulator for use with the method for generating Expired - Fee Related CA2319430C (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
NO980385A NO980385D0 (en) 1998-01-28 1998-01-28 Circuits generated by in situ conversion
NO19980385 1998-01-28
NO982518A NO308149B1 (en) 1998-06-02 1998-06-02 Scalable, integrated data processing device
NO19982518 1998-06-02
PCT/NO1999/000022 WO1999044229A1 (en) 1998-01-28 1999-01-28 A method for generating electrical conducting or semiconducting structures in two or three dimensions, a method for erasing the same structures and an electric field generator/modulator for use with the method for generating

Publications (2)

Publication Number Publication Date
CA2319430A1 true CA2319430A1 (en) 1999-09-02
CA2319430C CA2319430C (en) 2004-05-11

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
CA002319430A Expired - Fee Related CA2319430C (en) 1998-01-28 1999-01-28 A method for generating electrical conducting or semiconducting structures in two or three dimensions, a method for erasing the same structures and an electric field generator/modulator for use with the method for generating
CA002319428A Expired - Fee Related CA2319428C (en) 1998-01-28 1999-01-28 A method for generation of electrical conducting or semiconducting structures in three dimensions and methods for erasure of the same structures

Family Applications After (1)

Application Number Title Priority Date Filing Date
CA002319428A Expired - Fee Related CA2319428C (en) 1998-01-28 1999-01-28 A method for generation of electrical conducting or semiconducting structures in three dimensions and methods for erasure of the same structures

Country Status (12)

Country Link
US (3) US6432739B1 (en)
EP (2) EP1051745B1 (en)
JP (2) JP4272353B2 (en)
KR (2) KR100375864B1 (en)
CN (2) CN1171301C (en)
AT (1) ATE377842T1 (en)
AU (2) AU733522B2 (en)
CA (2) CA2319430C (en)
DE (1) DE69937485T2 (en)
HK (2) HK1035602A1 (en)
RU (2) RU2183882C2 (en)
WO (2) WO1999044229A1 (en)

Families Citing this family (131)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6859548B2 (en) 1996-09-25 2005-02-22 Kabushiki Kaisha Toshiba Ultrasonic picture processing method and ultrasonic picture processing apparatus
JP4744757B2 (en) 1999-07-21 2011-08-10 イー インク コーポレイション Use of storage capacitors to enhance the performance of active matrix driven electronic displays.
US6545291B1 (en) 1999-08-31 2003-04-08 E Ink Corporation Transistor design for use in the construction of an electronically driven display
JP2003513475A (en) * 1999-11-02 2003-04-08 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Method of forming vertical interconnects between thin film microelectronic devices and articles with such vertical interconnects
EP1136942A1 (en) * 2000-03-22 2001-09-26 Infineon Technologies AG Circuit assembly for protection of a circuit against analysis and manipulation
US7893435B2 (en) 2000-04-18 2011-02-22 E Ink Corporation Flexible electronic circuits and displays including a backplane comprising a patterned metal foil having a plurality of apertures extending therethrough
US7875975B2 (en) * 2000-08-18 2011-01-25 Polyic Gmbh & Co. Kg Organic integrated circuit completely encapsulated by multi-layered barrier and included in RFID tag
JP2004507096A (en) * 2000-08-18 2004-03-04 シーメンス　アクチエンゲゼルシヤフト Organic field effect transistor (OFET), method of manufacturing the organic field effect transistor, integrated circuit formed from the organic field effect transistor, and use of the integrated circuit
KR100394028B1 (en) * 2000-12-28 2003-08-06 엘지.필립스 엘시디 주식회사 Liquid crystal display device and method for manufacturing the same
DE10043204A1 (en) * 2000-09-01 2002-04-04 Siemens Ag Organic field-effect transistor, method for structuring an OFET and integrated circuit
DE10044842A1 (en) * 2000-09-11 2002-04-04 Siemens Ag Organic rectifier, circuit, RFID tag and use of an organic rectifier
WO2002025750A1 (en) * 2000-09-22 2002-03-28 Siemens Aktiengesellschaft Electrode and/or conductor track for organic components and production method therefor
DE10061299A1 (en) * 2000-12-08 2002-06-27 Siemens Ag Device for determining and / or forwarding at least one environmental influence, production method and use thereof
DE10061297C2 (en) * 2000-12-08 2003-05-28 Siemens Ag Procedure for structuring an OFET
DE10063721A1 (en) * 2000-12-20 2002-07-11 Merck Patent Gmbh Organic semiconductor, manufacturing process therefor and uses
DE10105914C1 (en) * 2001-02-09 2002-10-10 Siemens Ag Organic field effect transistor with photo-structured gate dielectric and a method for its production
JP2005509200A (en) * 2001-03-26 2005-04-07 シーメンス　アクチエンゲゼルシヤフト Device having at least two organic electronic component elements and manufacturing method for the device
US6873540B2 (en) * 2001-05-07 2005-03-29 Advanced Micro Devices, Inc. Molecular memory cell
US6781868B2 (en) * 2001-05-07 2004-08-24 Advanced Micro Devices, Inc. Molecular memory device
US6844608B2 (en) 2001-05-07 2005-01-18 Advanced Micro Devices, Inc. Reversible field-programmable electric interconnects
US6855977B2 (en) * 2001-05-07 2005-02-15 Advanced Micro Devices, Inc. Memory device with a self-assembled polymer film and method of making the same
JP4731794B2 (en) * 2001-05-07 2011-07-27 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド Switch element having memory effect and method for switching the element
CN1276518C (en) 2001-05-07 2006-09-20 先进微装置公司 Floating gate memory device using composite molecular material
US6756620B2 (en) * 2001-06-29 2004-06-29 Intel Corporation Low-voltage and interface damage-free polymer memory device
WO2003009359A1 (en) * 2001-07-16 2003-01-30 Boris Aronovich Gurovich Method for forming a multilayer structure provided with predetermined parameters
US6624457B2 (en) 2001-07-20 2003-09-23 Intel Corporation Stepped structure for a multi-rank, stacked polymer memory device and method of making same
EP1434232B1 (en) * 2001-08-13 2007-09-19 Advanced Micro Devices, Inc. Memory cell
US6858481B2 (en) 2001-08-13 2005-02-22 Advanced Micro Devices, Inc. Memory device with active and passive layers
US6806526B2 (en) 2001-08-13 2004-10-19 Advanced Micro Devices, Inc. Memory device
US6838720B2 (en) * 2001-08-13 2005-01-04 Advanced Micro Devices, Inc. Memory device with active passive layers
US6768157B2 (en) 2001-08-13 2004-07-27 Advanced Micro Devices, Inc. Memory device
DE10151036A1 (en) * 2001-10-16 2003-05-08 Siemens Ag Isolator for an organic electronic component
DE10151440C1 (en) 2001-10-18 2003-02-06 Siemens Ag Organic electronic component for implementing an encapsulated partially organic electronic component has components like a flexible foil as an antenna, a diode or capacitor and an organic transistor.
DE10160732A1 (en) * 2001-12-11 2003-06-26 Siemens Ag OFET used e.g. in RFID tag, comprises an intermediate layer on an active semiconductor layer
KR100433407B1 (en) * 2002-02-06 2004-05-31 삼성광주전자 주식회사 Upright-type vacuum cleaner
DE10212639A1 (en) * 2002-03-21 2003-10-16 Siemens Ag Device and method for laser structuring functional polymers and uses
DE10212640B4 (en) * 2002-03-21 2004-02-05 Siemens Ag Logical components made of organic field effect transistors
RU2205469C1 (en) * 2002-04-18 2003-05-27 Гурович Борис Аронович Method for producing three-dimensional conducting structure
DE10226370B4 (en) * 2002-06-13 2008-12-11 Polyic Gmbh & Co. Kg Substrate for an electronic component, use of the substrate, methods for increasing the charge carrier mobility and organic field effect transistor (OFET)
US6661024B1 (en) * 2002-07-02 2003-12-09 Motorola, Inc. Integrated circuit including field effect transistor and method of manufacture
WO2004017439A2 (en) * 2002-07-29 2004-02-26 Siemens Aktiengesellschaft Electronic component comprising predominantly organic functional materials and method for the production thereof
EP1526902B1 (en) * 2002-08-08 2008-05-21 PolyIC GmbH & Co. KG Electronic device
JP2005537637A (en) 2002-08-23 2005-12-08 ジーメンス アクツィエンゲゼルシャフト Organic components and related circuits for overvoltage protection
US7012276B2 (en) * 2002-09-17 2006-03-14 Advanced Micro Devices, Inc. Organic thin film Zener diodes
EP1559147B1 (en) 2002-10-02 2014-11-12 Leonhard Kurz Stiftung & Co. KG Film comprising organic semiconductors
US6870183B2 (en) 2002-11-04 2005-03-22 Advanced Micro Devices, Inc. Stacked organic memory devices and methods of operating and fabricating
US20060118778A1 (en) * 2002-11-05 2006-06-08 Wolfgang Clemens Organic electronic component with high-resolution structuring and method for the production thereof
DE10253154A1 (en) * 2002-11-14 2004-05-27 Siemens Ag Biosensor, used to identify analyte in liquid sample, has test field with detector, where detector registers field changes as electrical signals for evaluation
US20060035423A1 (en) * 2002-11-19 2006-02-16 Walter Fix Organic electronic component comprising the same organic material for at least two functional layers
DE50306538D1 (en) * 2002-11-19 2007-03-29 Polyic Gmbh & Co Kg ORGANIC ELECTRONIC SWITCHING WITH A STRUCTURED SEMICONDUCTIVE FUNCTIONAL LAYER AND MANUFACTURING METHOD THEREFOR
US6905908B2 (en) * 2002-12-26 2005-06-14 Motorola, Inc. Method of fabricating organic field effect transistors
DE10300521A1 (en) * 2003-01-09 2004-07-22 Siemens Ag Organoresistive memory
EP1586127B1 (en) * 2003-01-21 2007-05-02 PolyIC GmbH & Co. KG Organic electronic component and method for producing organic electronic devices
DE10302149A1 (en) * 2003-01-21 2005-08-25 Siemens Ag Use of conductive carbon black / graphite blends for the production of low-cost electronics
MXPA05007878A (en) * 2003-01-29 2006-02-08 Polylc Gmbh & Co Kg Organic storage component and corresponding triggering circuit.
JP2004311845A (en) * 2003-04-09 2004-11-04 National Institute Of Advanced Industrial & Technology Visible-ray transmitting structure having power generating function
US7049153B2 (en) * 2003-04-23 2006-05-23 Micron Technology, Inc. Polymer-based ferroelectric memory
JP4583004B2 (en) * 2003-05-21 2010-11-17 株式会社 日立ディスプレイズ Manufacturing method of active matrix substrate
DE10330064B3 (en) * 2003-07-03 2004-12-09 Siemens Ag Organic logic gate has load field effect transistor with potential-free gate electrode in series with switching field effect transistor
DE10330062A1 (en) * 2003-07-03 2005-01-27 Siemens Ag Method and device for structuring organic layers
RU2243613C1 (en) * 2003-07-16 2004-12-27 Гурович Борис Аронович Method for bulk structure production
DE10338277A1 (en) * 2003-08-20 2005-03-17 Siemens Ag Organic capacitor with voltage controlled capacity
DE10339036A1 (en) 2003-08-25 2005-03-31 Siemens Ag Organic electronic component with high-resolution structuring and manufacturing method
DE10340643B4 (en) * 2003-09-03 2009-04-16 Polyic Gmbh & Co. Kg Printing method for producing a double layer for polymer electronics circuits, and thereby produced electronic component with double layer
DE10340644B4 (en) * 2003-09-03 2010-10-07 Polyic Gmbh & Co. Kg Mechanical controls for organic polymer electronics
US6989336B2 (en) * 2003-09-24 2006-01-24 E. I. Du Pont De Nemours And Company Process for laminating a dielectric layer onto a semiconductor
JP4729843B2 (en) * 2003-10-15 2011-07-20 凸版印刷株式会社 Thin film transistor manufacturing method
DE10349963A1 (en) 2003-10-24 2005-06-02 Leonhard Kurz Gmbh & Co. Kg Process for producing a film
DE102004002024A1 (en) * 2004-01-14 2005-08-11 Siemens Ag Self-aligning gate organic transistor and method of making the same
JP4501444B2 (en) * 2004-02-04 2010-07-14 ソニー株式会社 Method of forming wiring structure in transistor and method of manufacturing field effect transistor
CN1998095B (en) 2004-04-20 2010-11-03 视声公司 Arrayed ultrasonic transducer
US7122489B2 (en) * 2004-05-12 2006-10-17 Matsushita Electric Industrial Co., Ltd. Manufacturing method of composite sheet material using ultrafast laser pulses
JP2007537552A (en) * 2004-05-14 2007-12-20 ウェーブゼロ， インコーポレイテッド Radio frequency antenna and identification tag, and radio frequency antenna and radio frequency tag manufacturing method
US7019328B2 (en) * 2004-06-08 2006-03-28 Palo Alto Research Center Incorporated Printed transistors
GB0413749D0 (en) * 2004-06-19 2004-07-21 Koninkl Philips Electronics Nv Active matrix electronic array device
DE102004040831A1 (en) * 2004-08-23 2006-03-09 Polyic Gmbh & Co. Kg Radio-tag compatible outer packaging
RU2284267C2 (en) * 2004-11-10 2006-09-27 Броня Цой Material for the components of the radio-electronic devices
DE102004059467A1 (en) * 2004-12-10 2006-07-20 Polyic Gmbh & Co. Kg Gate made of organic field effect transistors
DE102004059464A1 (en) * 2004-12-10 2006-06-29 Polyic Gmbh & Co. Kg Electronic component with modulator
DE102004059465A1 (en) * 2004-12-10 2006-06-14 Polyic Gmbh & Co. Kg recognition system
DE102004063435A1 (en) 2004-12-23 2006-07-27 Polyic Gmbh & Co. Kg Organic rectifier
DE102005009820A1 (en) * 2005-03-01 2006-09-07 Polyic Gmbh & Co. Kg Electronic assembly with organic logic switching elements
DE102005009819A1 (en) 2005-03-01 2006-09-07 Polyic Gmbh & Co. Kg electronics assembly
DE102005017655B4 (en) * 2005-04-15 2008-12-11 Polyic Gmbh & Co. Kg Multilayer composite body with electronic function
KR100719346B1 (en) * 2005-04-19 2007-05-17 삼성전자주식회사 Resistive memory cell, method for forming the same and resistive memory array using the same
US7420442B1 (en) * 2005-06-08 2008-09-02 Sandia Corporation Micromachined microwave signal control device and method for making same
NO20052904L (en) * 2005-06-14 2006-12-15 Thin Film Electronics Asa A non-volatile electrical memory system
DE102005031448A1 (en) 2005-07-04 2007-01-11 Polyic Gmbh & Co. Kg Activatable optical layer
EP1742226B1 (en) * 2005-07-08 2010-09-15 STMicroelectronics Srl Method for realising an electric linkage in a semiconductor electronic device between a nanometric circuit architecture and standard electronic components
DE102005035589A1 (en) 2005-07-29 2007-02-01 Polyic Gmbh & Co. Kg Manufacturing electronic component on surface of substrate where component has two overlapping function layers
DE102005035590A1 (en) * 2005-07-29 2007-02-01 Polyic Gmbh & Co. Kg Electronic component has flexible substrate and stack of layers including function layer on substratesurface
DE102005042166A1 (en) * 2005-09-06 2007-03-15 Polyic Gmbh & Co.Kg Organic device and such a comprehensive electrical circuit
DE102005044306A1 (en) * 2005-09-16 2007-03-22 Polyic Gmbh & Co. Kg Electronic circuit and method for producing such
CA2935422C (en) 2005-11-02 2019-01-08 Visualsonics Inc. High frequency array ultrasound system
JP2007252249A (en) * 2006-03-22 2007-10-04 Oki Electric Ind Co Ltd Apparatus for synthesizing organic compound, light irradiation apparatus, substrate for synthesizing organic compound and method for synthesizing organic compound
US20070279230A1 (en) * 2006-06-01 2007-12-06 Wavezero, Inc. System and Method for Attaching Radiofrequency Identification Chips to Metalized Antenna
JP2008021814A (en) * 2006-07-13 2008-01-31 Hitachi Ltd Field-effect transistor, organic thin film transistor, and method of manufacturing organic transistor
TWI300251B (en) * 2006-07-14 2008-08-21 Ind Tech Res Inst Manufacturing method of vertical thin film transistor
US7851786B2 (en) * 2006-09-01 2010-12-14 Alcatel-Lucent Usa Inc. Programmable polyelectrolyte electrical switches
JP5250981B2 (en) * 2007-02-21 2013-07-31 セイコーエプソン株式会社 Organic device manufacturing method and electronic device
US9520563B2 (en) * 2007-11-21 2016-12-13 The Board Of Trustees Of The Leland Stanford Junior University Patterning of organic semiconductor materials
US9184369B2 (en) 2008-09-18 2015-11-10 Fujifilm Sonosite, Inc. Methods for manufacturing ultrasound transducers and other components
EP3576137A1 (en) * 2008-09-18 2019-12-04 FUJIFILM SonoSite, Inc. Ultrasound transducers
US9173047B2 (en) 2008-09-18 2015-10-27 Fujifilm Sonosite, Inc. Methods for manufacturing ultrasound transducers and other components
US10441185B2 (en) * 2009-12-16 2019-10-15 The Board Of Trustees Of The University Of Illinois Flexible and stretchable electronic systems for epidermal electronics
CN102656421A (en) * 2009-12-23 2012-09-05 Imra美国公司 Laser patterning using a structured optical element and focused beam
US9196509B2 (en) 2010-02-16 2015-11-24 Deca Technologies Inc Semiconductor device and method of adaptive patterning for panelized packaging
US8656333B1 (en) * 2010-02-16 2014-02-18 Deca Technologies, Inc. Integrated circuit package auto-routing
US8799845B2 (en) 2010-02-16 2014-08-05 Deca Technologies Inc. Adaptive patterning for panelized packaging
US20110266436A1 (en) * 2010-04-29 2011-11-03 Battelle Energy Alliance, Llc Apparatuses and methods for forming electromagnetic fields
US8502159B2 (en) * 2010-04-29 2013-08-06 Battelle Energy Alliance, Llc Apparatuses and methods for generating electric fields
RU2461151C1 (en) * 2011-01-25 2012-09-10 Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский ядерный университет "МИФИ" (НИЯУ МИФИ) Ion diode for generating neutrons
RU2479890C1 (en) * 2011-12-07 2013-04-20 Открытое акционерное общество "Научно-исследовательский институт полупроводникового машиностроения" Cassette for photoconverter process satellites
JP6105266B2 (en) 2011-12-15 2017-03-29 株式会社半導体エネルギー研究所 Storage device
WO2013111757A1 (en) * 2012-01-23 2013-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013161878A (en) * 2012-02-02 2013-08-19 Renesas Electronics Corp Semiconductor device and semiconductor device manufacturing method
US8753904B2 (en) 2012-06-07 2014-06-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for semiconductor device pattern loading effect characterization
US9482518B2 (en) 2012-06-07 2016-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods for semiconductor device process determination using reflectivity measurement
RU2504046C1 (en) * 2012-07-12 2014-01-10 Открытое акционерное общество "Концерн радиостроения "Вега" Method to produce interconnections in high-density electronic modules
CN103338596A (en) * 2013-06-18 2013-10-02 华南理工大学 Manufacturing method of whole addition circuit board without photoresist
US9040316B1 (en) 2014-06-12 2015-05-26 Deca Technologies Inc. Semiconductor device and method of adaptive patterning for panelized packaging with dynamic via clipping
CN104282250B (en) * 2014-10-24 2016-08-31 深圳市华星光电技术有限公司 In TFT MIS structure design control method and system
JP6504497B2 (en) * 2015-03-04 2019-04-24 株式会社アルバック Touch panel and transparent conductive substrate
CN105353590B (en) * 2015-12-11 2018-01-02 中国电子科技集团公司第四十一研究所 The exposure method of photoresist and substrate bearing device in thin film circuit plated through-hole
US10157803B2 (en) 2016-09-19 2018-12-18 Deca Technologies Inc. Semiconductor device and method of unit specific progressive alignment
US10573601B2 (en) 2016-09-19 2020-02-25 Deca Technologies Inc. Semiconductor device and method of unit specific progressive alignment
US10482976B2 (en) * 2017-06-29 2019-11-19 SK Hynix Inc. Memory device performing UV-assisted erase operation
RU185725U1 (en) * 2018-07-02 2018-12-17 федеральное государственное бюджетное научное учреждение "Научно-исследовательский институт перспективных материалов и технологий" MICROWAVE DEVICE FOR THERMAL PROCESSING OF POLYMER COMPOSITE MATERIALS
RU2700231C1 (en) * 2018-10-24 2019-09-13 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" Method of forming three-dimensional structures of functional layer topological elements on the surface of substrates
US20220221600A1 (en) * 2019-04-12 2022-07-14 Queen Mary University Of London Radiation detector
CN116801532A (en) * 2021-05-14 2023-09-22 Oppo广东移动通信有限公司 Shell, manufacturing method thereof, wearable device and electronic device

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4507672A (en) * 1980-03-14 1985-03-26 The Johns Hopkins University Method of fabricating a current controlled bistable electrical organic thin film switching device
US4371883A (en) * 1980-03-14 1983-02-01 The Johns Hopkins University Current controlled bistable electrical organic thin film switching device
US5407851A (en) * 1981-02-23 1995-04-18 Unisys Corporation Method of fabricating an electrically alterable resistive component on an insulating layer above a semiconductor substrate
US4825408A (en) * 1984-04-25 1989-04-25 The Johns Hopkins University Multistate optical switching and memory apparatus using an amphoteric organic charge transfer material
IL86162A (en) * 1988-04-25 1991-11-21 Zvi Orbach Customizable semiconductor devices
US5427941A (en) 1985-08-08 1995-06-27 Schering Corporation Actinomadura brunnea var. antibiotica strains
KR900008647B1 (en) * 1986-03-20 1990-11-26 후지쓰 가부시끼가이샤 A method for manufacturing three demensional i.c.
EP0263574A1 (en) * 1986-09-08 1988-04-13 THORN EMI North America Inc. A method of manufacturing a semiconductor device, and a semiconductor device, having at least one selectively actuable conductive line
US4806995A (en) * 1987-02-02 1989-02-21 Olin Corporation Optical and electrical switching devices and a polymer composition containing pendant organic charge transfer salt moieties useful in switching devices
EP0344346B1 (en) * 1988-06-01 1995-04-26 Texas Instruments Incorporated Optical switching device
JPH07103190B2 (en) * 1989-02-15 1995-11-08 松下電器産業株式会社 Organic conductive thin film and manufacturing method thereof
US5043251A (en) 1989-11-29 1991-08-27 The United States Of America As Represented By The Secretary Of The Navy Process of three dimensional lithography in amorphous polymers
US5689428A (en) * 1990-09-28 1997-11-18 Texas Instruments Incorporated Integrated circuits, transistors, data processing systems, printed wiring boards, digital computers, smart power devices, and processes of manufacture
US5282312A (en) * 1991-12-31 1994-02-01 Tessera, Inc. Multi-layer circuit construction methods with customization features
US5378916A (en) * 1993-02-17 1995-01-03 Xerox Corporation Color imaging charge-coupled array with multiple photosensitive regions
US5427841A (en) 1993-03-09 1995-06-27 U.S. Philips Corporation Laminated structure of a metal layer on a conductive polymer layer and method of manufacturing such a structure
ATE171560T1 (en) 1993-03-09 1998-10-15 Koninkl Philips Electronics Nv PROCESS FOR PRODUCING A PATTERN OF AN ELECTRICALLY CONDUCTIVE POLYMER ON A SUBSTRATE SURFACE AND METALIZATION OF SUCH A PATTERN
US5567550A (en) 1993-03-25 1996-10-22 Texas Instruments Incorporated Method of making a mask for making integrated circuits
EP1178530A2 (en) * 1993-09-30 2002-02-06 Kopin Corporation Three-dimensional processor using transferred thin film circuits
US5572409A (en) * 1994-02-08 1996-11-05 Prolinx Labs Corporation Apparatus including a programmable socket adapter for coupling an electronic component to a component socket on a printed circuit board
US5537108A (en) * 1994-02-08 1996-07-16 Prolinx Labs Corporation Method and structure for programming fuses
US5808351A (en) * 1994-02-08 1998-09-15 Prolinx Labs Corporation Programmable/reprogramable structure using fuses and antifuses
JP3770631B2 (en) * 1994-10-24 2006-04-26 株式会社ルネサステクノロジ Manufacturing method of semiconductor device
US5703394A (en) * 1996-06-10 1997-12-30 Motorola Integrated electro-optical package
JP4509228B2 (en) * 1997-08-22 2010-07-21 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Field effect transistor made of organic material and method of manufacturing the same

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