CA2331893A1 - Fabrication of gallium nitride semiconductor layers by lateral growth from trench sidewalls - Google Patents

Fabrication of gallium nitride semiconductor layers by lateral growth from trench sidewalls Download PDF

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Publication number
CA2331893A1
CA2331893A1 CA002331893A CA2331893A CA2331893A1 CA 2331893 A1 CA2331893 A1 CA 2331893A1 CA 002331893 A CA002331893 A CA 002331893A CA 2331893 A CA2331893 A CA 2331893A CA 2331893 A1 CA2331893 A1 CA 2331893A1
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Prior art keywords
gallium nitride
nitride semiconductor
lateral
nitride layer
layer
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CA002331893A
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French (fr)
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CA2331893C (en
Inventor
Tsvetanka Zheleva
Darren B. Thomson
Scott A. Smith
Kevin J. Linthicum
Thomas Gehrke
Robert F. Davis
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North Carolina State University
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North Carolina State University
Tsvetanka Zheleva
Darren B. Thomson
Scott A. Smith
Kevin J. Linthicum
Thomas Gehrke
Robert F. Davis
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Application filed by North Carolina State University, Tsvetanka Zheleva, Darren B. Thomson, Scott A. Smith, Kevin J. Linthicum, Thomas Gehrke, Robert F. Davis filed Critical North Carolina State University
Publication of CA2331893A1 publication Critical patent/CA2331893A1/en
Application granted granted Critical
Publication of CA2331893C publication Critical patent/CA2331893C/en
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Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H01L21/0265—Pendeoepitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates

Abstract

A sidewall (105) of an underlying gallium nitride layer (106) is laterally grown into a trench (107) in the underlying gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer ( 108a).
Microelectronic devices may then be formed in the lateral gallium nitride layer. Dislocation defects do not significantly propagate laterally from the sidewall into the trench in the underlying gallium nitride layer, so that the lateral gallium nitride semiconductor layer is relatively defect free. Moreover, the sidewall growth may be accomplished without the need to mask portions of the underlying gallium nitride layer during growth of the lateral gallium nitride layer. The defect density of the lateral gallium nitride semiconductor layer may be further decreased by growing a second gallium nitride semiconductor layer from the lateral gallium nitride layer.
CA002331893A 1998-06-10 1999-06-09 Fabrication of gallium nitride semiconductor layers by lateral growth from trench sidewalls Expired - Lifetime CA2331893C (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US8876198P 1998-06-10 1998-06-10
US60/088,761 1998-06-10
US09/327,136 1999-06-07
US09/327,136 US6265289B1 (en) 1998-06-10 1999-06-07 Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
PCT/US1999/012967 WO1999065068A1 (en) 1998-06-10 1999-06-09 Fabrication of gallium nitride semiconductor layers by lateral growth from trench sidewalls

Publications (2)

Publication Number Publication Date
CA2331893A1 true CA2331893A1 (en) 1999-12-16
CA2331893C CA2331893C (en) 2007-01-23

Family

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Family Applications (1)

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CA002331893A Expired - Lifetime CA2331893C (en) 1998-06-10 1999-06-09 Fabrication of gallium nitride semiconductor layers by lateral growth from trench sidewalls

Country Status (8)

Country Link
US (4) US6265289B1 (en)
EP (1) EP1088340A1 (en)
JP (1) JP3950630B2 (en)
KR (1) KR100498164B1 (en)
CN (1) CN1143364C (en)
AU (1) AU4556599A (en)
CA (1) CA2331893C (en)
WO (1) WO1999065068A1 (en)

Families Citing this family (164)

* Cited by examiner, † Cited by third party
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