CA2340987A1 - A metallic building element for optoelectronics - Google Patents
A metallic building element for optoelectronics Download PDFInfo
- Publication number
- CA2340987A1 CA2340987A1 CA002340987A CA2340987A CA2340987A1 CA 2340987 A1 CA2340987 A1 CA 2340987A1 CA 002340987 A CA002340987 A CA 002340987A CA 2340987 A CA2340987 A CA 2340987A CA 2340987 A1 CA2340987 A1 CA 2340987A1
- Authority
- CA
- Canada
- Prior art keywords
- metal
- building elements
- metallic
- cavities
- silicon plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/36—Mechanical coupling means
- G02B6/3628—Mechanical coupling means for mounting fibres to supporting carriers
- G02B6/3684—Mechanical coupling means for mounting fibres to supporting carriers characterised by the manufacturing process of surface profiling of the supporting carrier
- G02B6/3696—Mechanical coupling means for mounting fibres to supporting carriers characterised by the manufacturing process of surface profiling of the supporting carrier by moulding, e.g. injection moulding, casting, embossing, stamping, stenciling, printing, or with metallic mould insert manufacturing using LIGA or MIGA techniques
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/36—Mechanical coupling means
- G02B6/3628—Mechanical coupling means for mounting fibres to supporting carriers
- G02B6/3648—Supporting carriers of a microbench type, i.e. with micromachined additional mechanical structures
- G02B6/3652—Supporting carriers of a microbench type, i.e. with micromachined additional mechanical structures the additional structures being prepositioning mounting areas, allowing only movement in one dimension, e.g. grooves, trenches or vias in the microbench surface, i.e. self aligning supporting carriers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4228—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements
- G02B6/423—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements using guiding surfaces for the alignment
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/36—Mechanical coupling means
- G02B6/3628—Mechanical coupling means for mounting fibres to supporting carriers
- G02B6/3632—Mechanical coupling means for mounting fibres to supporting carriers characterised by the cross-sectional shape of the mechanical coupling means
- G02B6/3636—Mechanical coupling means for mounting fibres to supporting carriers characterised by the cross-sectional shape of the mechanical coupling means the mechanical coupling means being grooves
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/36—Mechanical coupling means
- G02B6/3628—Mechanical coupling means for mounting fibres to supporting carriers
- G02B6/3684—Mechanical coupling means for mounting fibres to supporting carriers characterised by the manufacturing process of surface profiling of the supporting carrier
- G02B6/3692—Mechanical coupling means for mounting fibres to supporting carriers characterised by the manufacturing process of surface profiling of the supporting carrier with surface micromachining involving etching, e.g. wet or dry etching steps
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12542—More than one such component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12944—Ni-base component
Abstract
The present invention relates to a method of patterning metallic building elements, and also to a metallic building element, where the measuring accuracy achieved can lie in the sub-micrometer range. Starting from a silicon master or original that can be etched to sub-micrometer precision and then plated with a metal, such as nickel (3), on the silicon surface, there can be produced a nickel shim where precision and surface fineness can lie in the sub-micrometer range. Subsequent to removal of the silicon master, a photo-sensitive material (5) can be used in liquid form or in film form to create mould cavities (9) that reach down to the nickel shim. These cavities can then be metal-plated to provide a building element (8) of higher precision in three dimensions.
Description
A METALLIC BUILDING ELEMENT FOR OPTOELECTRONICS
FIELD OF INVENTION
The present invention relates to a method of patterning metallic building Elements and to a patterned metallic building element, said building element being produced in accordance with the method of patterning metallic building elements, wherein the measurement accuracy obtained can lie in the sub-micrometer range. The building elements produced in accordance with the method may be used, among other things, as carrier: for optoelectrical and electrical components, and fibres and waveguides. The metallic building elements may also be used as micromechanical building blocks or as parts of a rnould cavity for injection moulding or compression moulding purposes.
BACKGROUND ART
c0 The technique at present used for mounting optoelectric laser chips in 1_ow-cost applications most often includes soldering of a chip to a ceramic or silicon carrier. Alignment between the optical active part of a laser and the core of a fibre can be achieved by virtue of the possibilities of etching c5 silicon with great precision and the use of a technique in which the laser is firmly soldered and aligned with the aid of the surface tension forces present in a solder melt. Some sort of gluing techr,i.que is normally used, for instance, to fasten pin diodes to a carrier. Optical mirrors produced by ..0 etching in silicon and metallising the surface are often used to reflect light frorn a fibre to a pin diode.
When an optoelectric laser chip is to be mounted on a ceramic carrier or a silicon carrier, there often arises the problem 35 of dissipating heat generating in the chip. Varying chip temperature can, in operation, influence the transmitted WO 00/11628 ~ PCT/SE99/01395 wavelength. An excessively high operating temperature can also shorten the useful life of the chip. Furthermore, ceramic and silicon carriers often demand a high price, due to the relatively complicated manufacturing processes involved.
SUMMARY OF THE INVENTION
The technique described in accordance with the invention :LO enables the cost-effective production of building elements that can be used either free-standing or as a substantial, pattern-creating part in a mould cavity intended for injection moulding or compression moulding purpoaes. The technique can be used to create metallic carriers that have :L5 low thermal resistance and good electrical conductivity, with the intention of preventing damage to electrical and optoelectrical chips, such as lasers, due to high oz- varying temperatures.
:?0 With a starting point from a silicon original or master, which can be etched to sub-micrometer precision and then plated with a metal, such as nickel, on the silicon surface, it is possible to produce a nickel shim with a precision and a surface fineness that wiil still lie in the sub-micrometer ~5 range. If necessary, the rear side of the shim can then be made flat prior to separating silicon from nickel. Subsequent to removing the silicon master., a photo-sensitive material, in liquid form or in film-form, can be used to create cavities that reach down to the nickel shim. These cavities 30 can then be metallised, to form three-dimensional building elements of high precision.
These metal precision elements can then be used, for instance, for effectively conducting away heat from lasers or 35 other heat-generating chips. The precision, surface fineness and measurement accuracy that can be achieved with the method also enable optoelectrical components, such as, e.g., lasers with optical single-:mode fibres and sharp optical mirrors to be aligned. The method also provides building elements that can conduct electric ~~urrent, which enables three-dimensional electric conductors and electrodes to be produced to a specified thickness. The template or form produced in accordance with the aforedescribed method can also be used repeatedly in plating cycles, therewith contributing to low-cost production of the plated building elements.
The invention will. now be described in more detail with reference to a preferred embodiment thereof and also with reference to the accompanying drawings.
1.5 BRIEF DESCRIPTION OF THE DRAWINGS
Figure la is a cross-sectional view of a micro-worked silicon plate.
FIELD OF INVENTION
The present invention relates to a method of patterning metallic building Elements and to a patterned metallic building element, said building element being produced in accordance with the method of patterning metallic building elements, wherein the measurement accuracy obtained can lie in the sub-micrometer range. The building elements produced in accordance with the method may be used, among other things, as carrier: for optoelectrical and electrical components, and fibres and waveguides. The metallic building elements may also be used as micromechanical building blocks or as parts of a rnould cavity for injection moulding or compression moulding purposes.
BACKGROUND ART
c0 The technique at present used for mounting optoelectric laser chips in 1_ow-cost applications most often includes soldering of a chip to a ceramic or silicon carrier. Alignment between the optical active part of a laser and the core of a fibre can be achieved by virtue of the possibilities of etching c5 silicon with great precision and the use of a technique in which the laser is firmly soldered and aligned with the aid of the surface tension forces present in a solder melt. Some sort of gluing techr,i.que is normally used, for instance, to fasten pin diodes to a carrier. Optical mirrors produced by ..0 etching in silicon and metallising the surface are often used to reflect light frorn a fibre to a pin diode.
When an optoelectric laser chip is to be mounted on a ceramic carrier or a silicon carrier, there often arises the problem 35 of dissipating heat generating in the chip. Varying chip temperature can, in operation, influence the transmitted WO 00/11628 ~ PCT/SE99/01395 wavelength. An excessively high operating temperature can also shorten the useful life of the chip. Furthermore, ceramic and silicon carriers often demand a high price, due to the relatively complicated manufacturing processes involved.
SUMMARY OF THE INVENTION
The technique described in accordance with the invention :LO enables the cost-effective production of building elements that can be used either free-standing or as a substantial, pattern-creating part in a mould cavity intended for injection moulding or compression moulding purpoaes. The technique can be used to create metallic carriers that have :L5 low thermal resistance and good electrical conductivity, with the intention of preventing damage to electrical and optoelectrical chips, such as lasers, due to high oz- varying temperatures.
:?0 With a starting point from a silicon original or master, which can be etched to sub-micrometer precision and then plated with a metal, such as nickel, on the silicon surface, it is possible to produce a nickel shim with a precision and a surface fineness that wiil still lie in the sub-micrometer ~5 range. If necessary, the rear side of the shim can then be made flat prior to separating silicon from nickel. Subsequent to removing the silicon master., a photo-sensitive material, in liquid form or in film-form, can be used to create cavities that reach down to the nickel shim. These cavities 30 can then be metallised, to form three-dimensional building elements of high precision.
These metal precision elements can then be used, for instance, for effectively conducting away heat from lasers or 35 other heat-generating chips. The precision, surface fineness and measurement accuracy that can be achieved with the method also enable optoelectrical components, such as, e.g., lasers with optical single-:mode fibres and sharp optical mirrors to be aligned. The method also provides building elements that can conduct electric ~~urrent, which enables three-dimensional electric conductors and electrodes to be produced to a specified thickness. The template or form produced in accordance with the aforedescribed method can also be used repeatedly in plating cycles, therewith contributing to low-cost production of the plated building elements.
The invention will. now be described in more detail with reference to a preferred embodiment thereof and also with reference to the accompanying drawings.
1.5 BRIEF DESCRIPTION OF THE DRAWINGS
Figure la is a cross-sectional view of a micro-worked silicon plate.
2.0 Figure lb is a cross-sectional view of the patterned silicon plate covered with a thin metal film.
Figure lc is a cross-sectional view of the coated silicon plate coated with a further metal layer.
;?5 Figure ld is a croas-sectional view of the coated silicon plate where the metal layer coating in Figure lc has been levelled or smoothed-off.
Figure le is a cross-sectional view of metallic layers that 30 remain subsequent to the removal of the silicon plate.
Figure if is a cross-sectional view of the remaining metal layers covered with a separation layer.
Figure lg is a cross--sectional view of the remaining metallic layers with the separation layer laminated with a photo-sensitive material.
Figure lh is a cross-sectional view of the metallic layers according to Figure lg exposed to light with the aid of a photomask.
Figure li is a cross-sectional view of the metallic layers according to Figure lh with dissolved parts.
Figure 1j is a cross-sectional view of the metallic layers according to Figure :L.i with metal-filled cavities.
7.5 Figure 1k is a cross-sectional view of the metallic layers according to Figure :1j with remaining photosensitive material etched away.
Figure 11 is a croas-sectional view of various separated, a?0 released and therewith formed building elements.
Figure lm is a cross-sectional view of remaining metallic layers that can be reused as moulds or templates according to Figure lg.
;? 5 DESCRIPTION OF PREFERRED EMBODIMENTS
Figure la illustrates a micro-worked silicon plate 1. The resultant pattern c:an be obtained in one or more of the 30 following ways: dry etching, wet etching, laser processing or spark processing.
Figure lb shows how a thin metal layer 2, a so-called start layer, has been sputtered or vaporised on the patterned 35 silicon plate 1 to enable subsequent initiation of a plating process.
Figure lc shows how a metal 3, and then preferably nickel, has been plated on the thin metal layer 2 on the silicon plate l, t=o provide a so-called nickel shim on the start layer.
Figure ld shows how the nickel shim 3 firmly seated on the silicon plate 1 has been levelled or smoothed by some mechanical process, for instance by smooth grinding or 1~ polishing.
Figure le shows how the silicon plate 1 and the nickel shim 3 have been separated from one another after being reversed.
Figure if shows how t:he nickel shim 3 has beer. coated with a separation layer 4 on the existing start layer 2, said separation layer enabling separation in a later stage, as described hereinafter with reference to Figure 11, but does not prevent plating, see hereinafter with reference to Figure lj.
Figure lg shows how the nickel shim 3 with layers 2 and 4 has been laminated with a. photo-sensitive material 5.
Figure lh shows how selective parts of the photo-sensitive material 5 have been exposed to light, with the aid of a so-called photomask 6. ' Figure li shows how the photo-sensitive material has been ~~0 developed, wherewith those parts that have been exposed to light have been dissolved in a developer to form cavities 9, leaving parts of non--exposed photo-sensitive material 7. If a negative photo-sensitive material has been used, non-exposed parts will dissolve :in the developer.
:i 5 Figure lj shows the mould cavities plated with a selected metal, to form building elements 8.
Figure Ik shows how remaining non-exposed photo-~~ensitive material has been dissolved with the aid of a chemical suitable to this enc~., therewith leaving building elements on the separation layer of the nickel shim.
Figure 11 shows how t=he individual, plated building elements have been released with the aid of the earlier provided separation layer.
Figure lm shows how t:he individual, plated building elements 8 have been released from the nickel shim 3 with the aid of the separation layer 4. The nickel shim can now be reused and coated with photo-sensitive material, as indicated with the arrow marking from Figure lm to Figure lg.
Etching away of the photo-sensitive material 7 to free the c0 created building elements, as described above with reference to Figure lk, can be excluded in certain applications, and a production cycle may run in accordance with the arrow marking from the state in Figure lm to the state in Figure li, where renewed plating can take place. Plated electrical parts, so-~5 called electrodes, can be created or, the plated basic structures, by using a slightly different sequence of operations than that. described, but with the same basic content.
..0 It will be understood that the invention is not restricted to the aforedescribed, illustrated embodiments thereof, and that modifications can be made within the scope of the following Claims.
Figure lc is a cross-sectional view of the coated silicon plate coated with a further metal layer.
;?5 Figure ld is a croas-sectional view of the coated silicon plate where the metal layer coating in Figure lc has been levelled or smoothed-off.
Figure le is a cross-sectional view of metallic layers that 30 remain subsequent to the removal of the silicon plate.
Figure if is a cross-sectional view of the remaining metal layers covered with a separation layer.
Figure lg is a cross--sectional view of the remaining metallic layers with the separation layer laminated with a photo-sensitive material.
Figure lh is a cross-sectional view of the metallic layers according to Figure lg exposed to light with the aid of a photomask.
Figure li is a cross-sectional view of the metallic layers according to Figure lh with dissolved parts.
Figure 1j is a cross-sectional view of the metallic layers according to Figure :L.i with metal-filled cavities.
7.5 Figure 1k is a cross-sectional view of the metallic layers according to Figure :1j with remaining photosensitive material etched away.
Figure 11 is a croas-sectional view of various separated, a?0 released and therewith formed building elements.
Figure lm is a cross-sectional view of remaining metallic layers that can be reused as moulds or templates according to Figure lg.
;? 5 DESCRIPTION OF PREFERRED EMBODIMENTS
Figure la illustrates a micro-worked silicon plate 1. The resultant pattern c:an be obtained in one or more of the 30 following ways: dry etching, wet etching, laser processing or spark processing.
Figure lb shows how a thin metal layer 2, a so-called start layer, has been sputtered or vaporised on the patterned 35 silicon plate 1 to enable subsequent initiation of a plating process.
Figure lc shows how a metal 3, and then preferably nickel, has been plated on the thin metal layer 2 on the silicon plate l, t=o provide a so-called nickel shim on the start layer.
Figure ld shows how the nickel shim 3 firmly seated on the silicon plate 1 has been levelled or smoothed by some mechanical process, for instance by smooth grinding or 1~ polishing.
Figure le shows how the silicon plate 1 and the nickel shim 3 have been separated from one another after being reversed.
Figure if shows how t:he nickel shim 3 has beer. coated with a separation layer 4 on the existing start layer 2, said separation layer enabling separation in a later stage, as described hereinafter with reference to Figure 11, but does not prevent plating, see hereinafter with reference to Figure lj.
Figure lg shows how the nickel shim 3 with layers 2 and 4 has been laminated with a. photo-sensitive material 5.
Figure lh shows how selective parts of the photo-sensitive material 5 have been exposed to light, with the aid of a so-called photomask 6. ' Figure li shows how the photo-sensitive material has been ~~0 developed, wherewith those parts that have been exposed to light have been dissolved in a developer to form cavities 9, leaving parts of non--exposed photo-sensitive material 7. If a negative photo-sensitive material has been used, non-exposed parts will dissolve :in the developer.
:i 5 Figure lj shows the mould cavities plated with a selected metal, to form building elements 8.
Figure Ik shows how remaining non-exposed photo-~~ensitive material has been dissolved with the aid of a chemical suitable to this enc~., therewith leaving building elements on the separation layer of the nickel shim.
Figure 11 shows how t=he individual, plated building elements have been released with the aid of the earlier provided separation layer.
Figure lm shows how t:he individual, plated building elements 8 have been released from the nickel shim 3 with the aid of the separation layer 4. The nickel shim can now be reused and coated with photo-sensitive material, as indicated with the arrow marking from Figure lm to Figure lg.
Etching away of the photo-sensitive material 7 to free the c0 created building elements, as described above with reference to Figure lk, can be excluded in certain applications, and a production cycle may run in accordance with the arrow marking from the state in Figure lm to the state in Figure li, where renewed plating can take place. Plated electrical parts, so-~5 called electrodes, can be created or, the plated basic structures, by using a slightly different sequence of operations than that. described, but with the same basic content.
..0 It will be understood that the invention is not restricted to the aforedescribed, illustrated embodiments thereof, and that modifications can be made within the scope of the following Claims.
Claims (3)
1. A method of producing optical building elements of metal with patterns, such as carriers for optofibres with patterns, such as grooves for optofibres, characterised by metal plating a patterned silicon plate; etching away the silicon plate; coating the formed metal pattern with a photosensitive material; delimiting with unexposed photosensitive material the metallic pattern with a photomask and light energy, therewith to form cavities on the metallic pattern; metal plating the formed cavities, such as to form metallic building elements that include patterns, such as grooves from the metallic pattern for at least one optical fibre; wherein said building elements are separable from the metal pattern for individual use as optofibre carriers or micromechanical building elements, and wherein said cavities can be recreated and reused to form new building elements.
2. The method according to Claim 1, characterised by coating the patterned surface of said silicon plate with a thin metal layer, which enables initiation of a plating process.
3. The method according to Claim 2, characterised by coating the metal layer with a separation layer.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9802751A SE522114C2 (en) | 1998-08-18 | 1998-08-18 | Metallic building elements for optoelectronics |
| SE9802751-9 | 1998-08-18 | ||
| PCT/SE1999/001395 WO2000011628A1 (en) | 1998-08-18 | 1999-08-18 | A metallic building element for optoelectronics |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2340987A1 true CA2340987A1 (en) | 2000-03-02 |
Family
ID=20412268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002340987A Abandoned CA2340987A1 (en) | 1998-08-18 | 1999-08-18 | A metallic building element for optoelectronics |
Country Status (11)
| Country | Link |
|---|---|
| US (2) | US6523804B1 (en) |
| EP (1) | EP1110188A1 (en) |
| JP (1) | JP2002523805A (en) |
| KR (1) | KR100575498B1 (en) |
| CN (1) | CN1313956A (en) |
| AU (1) | AU5665599A (en) |
| CA (1) | CA2340987A1 (en) |
| HK (1) | HK1040548A1 (en) |
| SE (1) | SE522114C2 (en) |
| TW (1) | TW396369B (en) |
| WO (1) | WO2000011628A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7997889B2 (en) * | 2006-05-26 | 2011-08-16 | Richie Johnson | Method for making hard mold |
| US8948562B2 (en) | 2008-11-25 | 2015-02-03 | Regents Of The University Of Minnesota | Replication of patterned thin-film structures for use in plasmonics and metamaterials |
| CN102787333B (en) * | 2012-08-22 | 2015-02-04 | 江苏大学 | Manufacturing method and device for fibre laser and electrochemical complex nanosecond pulse deposition |
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| JPS58158225A (en) * | 1982-03-15 | 1983-09-20 | Toshiba Corp | Manufacture of information recording substrate |
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| JPH06101616B2 (en) * | 1986-02-21 | 1994-12-12 | 名幸電子工業株式会社 | Method for manufacturing conductor circuit board |
| JPH01225789A (en) * | 1988-03-05 | 1989-09-08 | Hitake Seiko Kk | Formation of metallic pattern |
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| SE508068C2 (en) | 1996-12-19 | 1998-08-24 | Ericsson Telefon Ab L M | Micro replication in metal |
| US20010014409A1 (en) * | 1997-04-04 | 2001-08-16 | Cohen Adam L. | Article, method, and apparatus for electrochemical fabrication |
| JPH11326603A (en) * | 1998-05-19 | 1999-11-26 | Seiko Epson Corp | Microlens array and its production thereof, and display |
| US6242163B1 (en) * | 1998-08-31 | 2001-06-05 | Board Of Trustees Of The Leland Stanford Junior University | Shape deposition manufacturing of microscopic ceramic and metallic parts using silicon molds |
| US6163957A (en) * | 1998-11-13 | 2000-12-26 | Fujitsu Limited | Multilayer laminated substrates with high density interconnects and methods of making the same |
| JP4733319B2 (en) * | 2000-09-18 | 2011-07-27 | アイメック | Manufacturing method of probe tip structure |
-
1998
- 1998-08-18 SE SE9802751A patent/SE522114C2/en not_active IP Right Cessation
- 1998-11-16 TW TW087118939A patent/TW396369B/en not_active IP Right Cessation
-
1999
- 1999-08-17 US US09/375,376 patent/US6523804B1/en not_active Expired - Lifetime
- 1999-08-18 WO PCT/SE1999/001395 patent/WO2000011628A1/en active IP Right Grant
- 1999-08-18 EP EP99943588A patent/EP1110188A1/en not_active Withdrawn
- 1999-08-18 CN CN99809814A patent/CN1313956A/en active Pending
- 1999-08-18 AU AU56655/99A patent/AU5665599A/en not_active Abandoned
- 1999-08-18 KR KR1020017002016A patent/KR100575498B1/en not_active IP Right Cessation
- 1999-08-18 CA CA002340987A patent/CA2340987A1/en not_active Abandoned
- 1999-08-18 JP JP2000566810A patent/JP2002523805A/en active Pending
-
2002
- 2002-03-13 HK HK02101929.2A patent/HK1040548A1/en unknown
- 2002-03-29 US US10/112,196 patent/US7163639B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010072711A (en) | 2001-07-31 |
| WO2000011628A1 (en) | 2000-03-02 |
| CN1313956A (en) | 2001-09-19 |
| US20020104826A1 (en) | 2002-08-08 |
| US6523804B1 (en) | 2003-02-25 |
| TW396369B (en) | 2000-07-01 |
| SE9802751L (en) | 2000-02-19 |
| KR100575498B1 (en) | 2006-05-03 |
| EP1110188A1 (en) | 2001-06-27 |
| SE9802751D0 (en) | 1998-08-18 |
| SE522114C2 (en) | 2004-01-13 |
| US7163639B2 (en) | 2007-01-16 |
| JP2002523805A (en) | 2002-07-30 |
| AU5665599A (en) | 2000-03-14 |
| HK1040548A1 (en) | 2002-06-14 |
| WO2000011628A8 (en) | 2000-05-18 |
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| Date | Code | Title | Description |
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| FZDE | Discontinued |