CA2343105A1 - Semiconductor light-emitting device and method for manufacturing the same - Google Patents

Semiconductor light-emitting device and method for manufacturing the same Download PDF

Info

Publication number
CA2343105A1
CA2343105A1 CA002343105A CA2343105A CA2343105A1 CA 2343105 A1 CA2343105 A1 CA 2343105A1 CA 002343105 A CA002343105 A CA 002343105A CA 2343105 A CA2343105 A CA 2343105A CA 2343105 A1 CA2343105 A1 CA 2343105A1
Authority
CA
Canada
Prior art keywords
emitting device
light
active layer
clad
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002343105A
Other languages
French (fr)
Other versions
CA2343105C (en
Inventor
Tetsuhiro Tanabe
Ken Nakahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co., Ltd.
Tetsuhiro Tanabe
Ken Nakahara
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co., Ltd., Tetsuhiro Tanabe, Ken Nakahara filed Critical Rohm Co., Ltd.
Publication of CA2343105A1 publication Critical patent/CA2343105A1/en
Application granted granted Critical
Publication of CA2343105C publication Critical patent/CA2343105C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02472—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of group II and group VI of the periodic system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0213—Sapphire, quartz or diamond based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2224—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semi-insulating semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3214—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities comprising materials from other groups of the periodic system than the materials of the active layer, e.g. ZnSe claddings and GaAs active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser

Abstract

A semiconductor light-emitting device has a structure where an active layer (5) which emits light when current is injected and has a composition of, e.g ., CdxZn1-xO (0 x 1) is sandwiched between an n-type clad layer (4) and a p- type clad layer (6) both made of materials having band gaps wider than that of the active layer (5). It is preferable that the composition of the clad laye rs (4, 6) is, e.g., MgyZn1-yO (0 y 1). The band gap of the ZnO material is narrowed. The materials of the active layer and clad layers of a semiconduct or light-emitting device such as a blue light-emitting diode or laser diode in which an active layer is sandwiched between clad layers can be an oxide semiconductor which can be wet-etched, easily handled, and excellent in crystallinity, thereby providing a blue light-emitting device excellent in light emission characteristics.
CA002343105A 1998-09-10 1999-09-09 Semiconductor light-emitting device and method for manufacturing the same Expired - Fee Related CA2343105C (en)

Applications Claiming Priority (33)

Application Number Priority Date Filing Date Title
JP25716798 1998-09-10
JP10/257167 1998-09-10
JP10/274026 1998-09-28
JP27402698 1998-09-28
JP10/320909 1998-11-11
JP10/320910 1998-11-11
JP32091098 1998-11-11
JP32090998 1998-11-11
JP32400498 1998-11-13
JP10/324004 1998-11-13
JP32826998 1998-11-18
JP10/328271 1998-11-18
JP32827198 1998-11-18
JP10/328272 1998-11-18
JP10/328269 1998-11-18
JP10/328273 1998-11-18
JP32827398 1998-11-18
JP32827298 1998-11-18
JP10/361559 1998-12-18
JP36156298 1998-12-18
JP36155998 1998-12-18
JP36156198 1998-12-18
JP36155798 1998-12-18
JP10/361557 1998-12-18
JP10/361562 1998-12-18
JP10/361561 1998-12-18
JP11/5678 1999-01-12
JP567899 1999-01-12
JP2416999 1999-02-01
JP11/24169 1999-02-01
JP2416899 1999-02-01
JP11/24168 1999-02-01
PCT/JP1999/004903 WO2000016411A1 (en) 1998-09-10 1999-09-09 Semiconductor light-emitting device and method for manufacturing the same

Publications (2)

Publication Number Publication Date
CA2343105A1 true CA2343105A1 (en) 2000-03-23
CA2343105C CA2343105C (en) 2004-09-28

Family

ID=27585644

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002343105A Expired - Fee Related CA2343105C (en) 1998-09-10 1999-09-09 Semiconductor light-emitting device and method for manufacturing the same

Country Status (6)

Country Link
US (1) US7132691B1 (en)
EP (1) EP1115163A4 (en)
JP (3) JP4365530B2 (en)
KR (1) KR100648759B1 (en)
CA (1) CA2343105C (en)
WO (1) WO2000016411A1 (en)

Families Citing this family (119)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002016285A (en) * 2000-06-27 2002-01-18 National Institute Of Advanced Industrial & Technology Semiconductor light-emitting element
JP4540201B2 (en) * 2000-09-13 2010-09-08 独立行政法人産業技術総合研究所 Method for manufacturing semiconductor device having ZnO-based oxide semiconductor layer
JP2002094114A (en) * 2000-09-13 2002-03-29 National Institute Of Advanced Industrial & Technology SEMICONDUCTOR DEVICE COMPRISING ZnO-BASED OXIDE SEMICONDUCTOR LAYER AND ITS FABRICATING METHOD
JP4619512B2 (en) * 2000-09-29 2011-01-26 スタンレー電気株式会社 Optical semiconductor device
FR2817084B1 (en) * 2000-11-23 2005-04-29 David J Rogers POLYCRYSTALLINE ZINC POLYCRYSTALLINE LASER AND METHOD FOR PRODUCING THE SAME
JP4431925B2 (en) * 2000-11-30 2010-03-17 信越半導体株式会社 Method for manufacturing light emitting device
US6812483B2 (en) 2001-01-05 2004-11-02 Japan Science And Technology Agency Optical semiconductor element utilizing optical transition between ZnO heterostructure sub-bands
DE10112542B9 (en) * 2001-03-15 2013-01-03 Osram Opto Semiconductors Gmbh Radiation-emitting optical component
TW541723B (en) 2001-04-27 2003-07-11 Shinetsu Handotai Kk Method for manufacturing light-emitting element
TWI294699B (en) * 2006-01-27 2008-03-11 Epistar Corp Light emitting device and method of forming the same
TW541710B (en) * 2001-06-27 2003-07-11 Epistar Corp LED having transparent substrate and the manufacturing method thereof
TW550839B (en) * 2001-07-25 2003-09-01 Shinetsu Handotai Kk Light emitting element and method for manufacturing thereof
JP2003282434A (en) * 2002-03-20 2003-10-03 Ngk Insulators Ltd ZnO-BASED EPITAXIAL GROWTH SUBSTRATE, ZnO-BASED EPITAXIAL GROWTH UNDERLYING SUBSTRATE, AND MANUFACTURING METHOD FOR ZnO-BASED FILM
JP2003282944A (en) * 2002-03-26 2003-10-03 Shin Etsu Handotai Co Ltd Visible light emitting device
DE10238135B4 (en) * 2002-08-15 2004-09-09 Otto-Von-Guericke-Universität Magdeburg Process for the production of group II oxide layers with the gas phase epitaxy, group II oxide layer and group II oxide semiconductor component
ATE488614T1 (en) * 2002-08-28 2010-12-15 Moxtronics Inc HYBRID JET COATING SYSTEM AND METHOD FOR PRODUCING ZNO LAYERS
WO2004025712A2 (en) * 2002-09-16 2004-03-25 Massachusetts Institute Of Technology Method for p-type doping wide band gap oxide semiconductors
WO2004054325A1 (en) 2002-12-12 2004-06-24 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, manufacturing apparatus, film-forming method, and cleaning method
JP4241057B2 (en) * 2003-01-20 2009-03-18 シャープ株式会社 Oxide semiconductor light emitting device and manufacturing method thereof
JP4194854B2 (en) * 2003-01-31 2008-12-10 シャープ株式会社 Oxide semiconductor light emitting device
JP2004247681A (en) * 2003-02-17 2004-09-02 Sharp Corp Oxide semiconductor light emitting device
JP4034208B2 (en) * 2003-02-25 2008-01-16 ローム株式会社 Transparent electrode
JP4045499B2 (en) * 2003-03-27 2008-02-13 信越半導体株式会社 Method for manufacturing ZnO-based semiconductor element
KR101148332B1 (en) 2003-04-30 2012-05-25 크리, 인코포레이티드 High powered light emitter packages with compact optics
US7005679B2 (en) 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
JP4287698B2 (en) * 2003-05-26 2009-07-01 シャープ株式会社 Oxide semiconductor light emitting device and manufacturing method thereof
JP2005026465A (en) * 2003-07-02 2005-01-27 Sharp Corp Oxide semiconductor light emitting element
KR101034055B1 (en) * 2003-07-18 2011-05-12 엘지이노텍 주식회사 Light emitting diode and method for manufacturing light emitting diode
KR100693407B1 (en) * 2003-09-04 2007-03-12 광주과학기술원 Method to Make Light Emitting Devices using p-ZnO
KR100571819B1 (en) * 2003-10-16 2006-04-17 삼성전자주식회사 light emitting device and method of manufacturing the same using p-type conductive transparent oxide thin film electrode
JP2005243955A (en) * 2004-02-26 2005-09-08 Shin Etsu Handotai Co Ltd Light emitting element, and its manufacturing method
JP4543148B2 (en) * 2004-03-09 2010-09-15 独立行政法人科学技術振興機構 Oxide quantum well structure and optical device using the same
JP2005340765A (en) * 2004-04-30 2005-12-08 Sumitomo Electric Ind Ltd Semiconductor light emitting element
US7691353B2 (en) * 2004-06-17 2010-04-06 Burgener Ii Robert H Low dielectric constant group II-VI insulator
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
US7880176B2 (en) * 2004-07-23 2011-02-01 Samsung Led Co., Ltd. Top-emitting light emitting diodes and methods of manufacturing thereof
US7821019B2 (en) * 2004-10-04 2010-10-26 Svt Associates, Inc. Triple heterostructure incorporating a strained zinc oxide layer for emitting light at high temperatures
US7432531B2 (en) * 2005-02-07 2008-10-07 Matsushita Electric Industrial Co., Ltd. Semiconductor device
JP4731949B2 (en) * 2005-02-25 2011-07-27 株式会社沖データ Semiconductor device, LED head, and image forming apparatus using the same
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
KR100711203B1 (en) * 2005-08-23 2007-04-24 한국과학기술연구원 The method for fabricating p-type, intrinsic and n-type composite light emitting diode using ZnO
JP5034035B2 (en) * 2005-08-29 2012-09-26 国立大学法人静岡大学 Manufacturing method of semiconductor light emitting device
JP2007103407A (en) * 2005-09-30 2007-04-19 Sanyo Electric Co Ltd Light emitting element
US7723154B1 (en) 2005-10-19 2010-05-25 North Carolina State University Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities
JP4876242B2 (en) * 2005-12-16 2012-02-15 国立大学法人静岡大学 Crystal growth method and crystal growth apparatus
EP1969633B1 (en) 2005-12-22 2018-08-29 Cree, Inc. Lighting device
CN101820043A (en) 2006-01-09 2010-09-01 首尔Opto仪器股份有限公司 Light-emitting device
KR100787361B1 (en) * 2006-02-01 2007-12-18 광주과학기술원 Light emitting diode
US7777250B2 (en) 2006-03-24 2010-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures and related methods for device fabrication
WO2008027896A2 (en) * 2006-08-29 2008-03-06 Moxtronics Inc. Improved films and structures for metal oxide semiconductor light emitting devices and methods
WO2008030574A1 (en) 2006-09-07 2008-03-13 Amberwave Systems Corporation Defect reduction using aspect ratio trapping
US20100224890A1 (en) * 2006-09-18 2010-09-09 Cree, Inc. Light emitting diode chip with electrical insulation element
DE102006045834A1 (en) * 2006-09-22 2008-04-03 Humboldt-Universität Zu Berlin Method for producing a semiconductor material
WO2008039534A2 (en) 2006-09-27 2008-04-03 Amberwave Systems Corporation Quantum tunneling devices and circuits with lattice- mismatched semiconductor structures
US7799592B2 (en) 2006-09-27 2010-09-21 Taiwan Semiconductor Manufacturing Company, Ltd. Tri-gate field-effect transistors formed by aspect ratio trapping
US20080187018A1 (en) 2006-10-19 2008-08-07 Amberwave Systems Corporation Distributed feedback lasers formed via aspect ratio trapping
EP2108060A1 (en) * 2006-12-11 2009-10-14 Lumenz, LLC Zinc oxide multi-junction photovoltaic cells and optoelectronic devices
US20080197369A1 (en) * 2007-02-20 2008-08-21 Cree, Inc. Double flip semiconductor device and method for fabrication
US7606448B2 (en) * 2007-03-13 2009-10-20 Micron Technology, Inc. Zinc oxide diodes for optical interconnections
US7529460B2 (en) * 2007-03-13 2009-05-05 Micron Technology, Inc. Zinc oxide optical waveguides
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
WO2008124154A2 (en) 2007-04-09 2008-10-16 Amberwave Systems Corporation Photovoltaics on silicon
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
JP2009021540A (en) * 2007-06-13 2009-01-29 Rohm Co Ltd Zno-based thin film and zno-based semiconductor element
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
DE112008002387B4 (en) 2007-09-07 2022-04-07 Taiwan Semiconductor Manufacturing Co., Ltd. Structure of a multijunction solar cell, method of forming a photonic device, photovoltaic multijunction cell and photovoltaic multijunction cell device,
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
JP4575966B2 (en) * 2008-02-27 2010-11-04 株式会社沖データ Semiconductor device
JP4644754B2 (en) * 2008-03-13 2011-03-02 昭和電工株式会社 Group III nitride semiconductor device and group III nitride semiconductor light emitting device
CN102119449B (en) * 2008-03-26 2013-01-23 晶能光电（江西）有限公司 Semiconductor light-emitting device with a highly reflective ohmic-electrode
TW200949004A (en) * 2008-04-25 2009-12-01 Lumenz Inc Metalorganic chemical vapor deposition of zinc oxide
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
KR101427076B1 (en) * 2008-07-22 2014-08-07 삼성전자주식회사 semiconductor light emitting device
WO2010033792A1 (en) * 2008-09-18 2010-03-25 Lumenz Llc Textured semiconductor light-emitting devices
JP5416212B2 (en) 2008-09-19 2014-02-12 台湾積體電路製造股▲ふん▼有限公司 Device formation by epitaxial layer growth
US20100072515A1 (en) 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
EP2253988A1 (en) * 2008-09-19 2010-11-24 Christie Digital Systems USA, Inc. A light integrator for more than one lamp
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
JP5120203B2 (en) 2008-10-28 2013-01-16 富士通株式会社 Superconducting filter
TW201027811A (en) * 2009-01-12 2010-07-16 Ubilux Optoelectronics Corp LED and its manufacturing method
US8936962B2 (en) * 2009-03-13 2015-01-20 Nec Corporation Optical modulator and method for manufacturing same
CN102379046B (en) 2009-04-02 2015-06-17 台湾积体电路制造股份有限公司 Devices formed from a non-polar plane of a crystalline material and method of making the same
JP5392608B2 (en) * 2009-06-24 2014-01-22 スタンレー電気株式会社 Zinc oxide based semiconductor device and growth method thereof
KR101915421B1 (en) 2009-06-30 2018-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR101125459B1 (en) * 2009-10-28 2012-03-27 엘지이노텍 주식회사 Light emitting device and method for fabricating the same
US8759917B2 (en) * 2010-01-04 2014-06-24 Samsung Electronics Co., Ltd. Thin-film transistor having etch stop multi-layer and method of manufacturing the same
KR101028251B1 (en) * 2010-01-19 2011-04-11 엘지이노텍 주식회사 Semiconductor light emitting device and fabrication method thereof
JP5547989B2 (en) * 2010-03-01 2014-07-16 スタンレー電気株式会社 Method for manufacturing ZnO-based semiconductor element
JP5437135B2 (en) * 2010-04-02 2014-03-12 スタンレー電気株式会社 Semiconductor crystal growth method
US7829376B1 (en) 2010-04-07 2010-11-09 Lumenz, Inc. Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
US9012948B2 (en) * 2010-10-04 2015-04-21 Epistar Corporation Light-emitting element having a plurality of contact parts
KR101053114B1 (en) * 2011-02-28 2011-08-01 박건 Method of manufacturing gan powder and nitride based light emitting device using gan powder manufactured by the method
KR101235239B1 (en) * 2011-05-20 2013-02-21 서울대학교산학협력단 Semiconductor thin film structure and method of forming the same
US9269858B2 (en) 2011-08-31 2016-02-23 Micron Technology, Inc. Engineered substrates for semiconductor devices and associated systems and methods
US8971370B1 (en) 2011-10-13 2015-03-03 Soraa Laser Diode, Inc. Laser devices using a semipolar plane
TWI497754B (en) * 2012-01-12 2015-08-21 Univ Nat Formosa Methods for improving the luminous efficiency of light emitting diodes
US9064790B2 (en) 2012-07-27 2015-06-23 Stanley Electric Co., Ltd. Method for producing p-type ZnO based compound semiconductor layer, method for producing ZnO based compound semiconductor element, p-type ZnO based compound semiconductor single crystal layer, ZnO based compound semiconductor element, and n-type ZnO based compound semiconductor laminate structure
JP6017243B2 (en) 2012-09-26 2016-10-26 スタンレー電気株式会社 ZnO-based semiconductor device and method for manufacturing ZnO-based semiconductor device
JP5343224B1 (en) * 2012-09-28 2013-11-13 Ｒｏｃａ株式会社 Semiconductor device and crystal
JP5896565B2 (en) * 2012-10-04 2016-03-30 株式会社ナノマテリアル研究所 Semiconductor device
US9153729B2 (en) * 2012-11-26 2015-10-06 International Business Machines Corporation Atomic layer deposition for photovoltaic devices
CN104241262B (en) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 Light emitting device and display device
TWI642204B (en) * 2014-04-02 2018-11-21 國立交通大學 Light emitting diode device
TWI652362B (en) * 2014-10-28 2019-03-01 日商半導體能源研究所股份有限公司 Oxide and manufacturing method thereof
EP3350846A4 (en) 2015-09-15 2019-04-17 The Regents of The University of California Multistep deposition of zinc oxide on gallium nitride
CN105633223B (en) * 2015-12-31 2018-10-09 华灿光电(苏州）有限公司 Semiconductor devices in AlGaN templates, the preparation method of AlGaN templates and AlGaN templates
US10541514B2 (en) * 2016-02-25 2020-01-21 Ngk Insulators, Ltd. Surface-emitting device, vertical external-cavity surface-emitting laser, and method for manufacturing surface-emitting device
JP6572803B2 (en) 2016-03-09 2019-09-11 三菱電機株式会社 Semiconductor laser device
CN205944139U (en) 2016-03-30 2017-02-08 首尔伟傲世有限公司 Ultraviolet ray light -emitting diode spare and contain this emitting diode module
CN107681028B (en) * 2017-10-24 2023-08-29 江门市奥伦德光电有限公司 ZnO-based LED chip with vertical structure and preparation method thereof
US11427499B2 (en) 2017-11-29 2022-08-30 Pilkington Group Limited Process for depositing a layer
DE102018123931A1 (en) * 2018-09-27 2020-04-02 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component with sapphire carrier and method for producing the optoelectronic semiconductor component
US11637219B2 (en) 2019-04-12 2023-04-25 Google Llc Monolithic integration of different light emitting structures on a same substrate
JP7292138B2 (en) * 2019-07-23 2023-06-16 株式会社ジャパンディスプレイ Display device repair system

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2350911A1 (en) * 1972-10-12 1974-04-18 Minnesota Mining & Mfg ZINC OXIDE LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING IT
JPS5428578A (en) * 1977-08-08 1979-03-03 Clarion Co Ltd Semiconductor memory
JPS54104295A (en) * 1978-02-02 1979-08-16 Azuma Shimizu Zinc oxide ni junction light emission diode and method of fabricating same
JPS55110089A (en) * 1979-02-16 1980-08-25 Futaba Corp Laser light emitting element
JPH0614564B2 (en) * 1987-07-13 1994-02-23 日本電信電話株式会社 Semiconductor light emitting element
JPH0645650A (en) * 1992-07-24 1994-02-18 Omron Corp Semiconductor light emittng element and optical detector, optical information processing device, and light emitting device using it
JPH06314652A (en) * 1993-04-28 1994-11-08 Victor Co Of Japan Ltd Method and apparatus for crystalline growing
JPH07267787A (en) * 1994-03-31 1995-10-17 Mitsubishi Cable Ind Ltd Production of single crystal of compound semiconductor
JPH07302764A (en) * 1994-04-28 1995-11-14 Sony Corp Growing method of ii-vi group compound semiconductor
JPH0855800A (en) * 1994-06-09 1996-02-27 Sony Corp Plasma generator
BR9506254A (en) * 1994-06-09 1996-04-16 Sony Corp Process of producing a nitrogen-doped group II-IV compound semiconductor film
JPH08148719A (en) * 1994-11-16 1996-06-07 Japan Energy Corp Semiconductor light emitting element
JPH08172056A (en) * 1994-12-20 1996-07-02 Mitsubishi Electric Corp Growing method of compound semiconductor layer
US5661074A (en) * 1995-02-03 1997-08-26 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
JPH08274373A (en) * 1995-03-30 1996-10-18 Japan Energy Corp Semiconductor light emitting element, and its manufacture
JPH0959086A (en) * 1995-08-25 1997-03-04 Minolta Co Ltd Formation of thin film
JPH09162500A (en) * 1995-12-12 1997-06-20 Sony Corp Semiconductor light emitting element
US5700718A (en) * 1996-02-05 1997-12-23 Micron Technology, Inc. Method for increased metal interconnect reliability in situ formation of titanium aluminide
US5889295A (en) * 1996-02-26 1999-03-30 Kabushiki Kaisha Toshiba Semiconductor device
KR100272155B1 (en) * 1996-07-26 2000-12-01 니시무로 타이죠 Gallium nitride-based compound semiconductor laser and method of manufacturing the same.
JPH1051073A (en) * 1996-08-02 1998-02-20 Fujitsu Ltd Semiconductor light emitting device
JP3330044B2 (en) * 1996-12-18 2002-09-30 シャープ株式会社 Semiconductor light emitting diode
US6057561A (en) * 1997-03-07 2000-05-02 Japan Science And Technology Corporation Optical semiconductor element
JP3380422B2 (en) * 1997-03-25 2003-02-24 科学技術振興事業団 Optical semiconductor device containing group II-oxide
GB2331307A (en) * 1997-11-15 1999-05-19 Sharp Kk Growth of buffer layer by molecular beam epitaxy

Also Published As

Publication number Publication date
US7132691B1 (en) 2006-11-07
EP1115163A4 (en) 2001-12-05
KR100648759B1 (en) 2006-11-23
EP1115163A1 (en) 2001-07-11
JP2009033184A (en) 2009-02-12
WO2000016411A1 (en) 2000-03-23
JP4865773B2 (en) 2012-02-01
JP4365530B2 (en) 2009-11-18
JP2008288621A (en) 2008-11-27
JP4922268B2 (en) 2012-04-25
KR20010085400A (en) 2001-09-07
CA2343105C (en) 2004-09-28

Similar Documents

Publication Publication Date Title
CA2343105A1 (en) Semiconductor light-emitting device and method for manufacturing the same
EP1063711A4 (en) Turntable device and manufacturing method thereof
EP0871228A3 (en) Semiconductor substrate, semiconductor device and method of manufacturing the same
JP2791448B2 (en) Light emitting diode
CN100377369C (en) Nitride semiconductor device
JP3333356B2 (en) Semiconductor device
JP4592560B2 (en) Nitride semiconductor light emitting device
US5760423A (en) Semiconductor light emitting device, electrode of the same device and method of manufacturing the same device
AU2002257318A1 (en) Group iii nitride based light emitting diode structures with a quantum well and superlattice
EP1162670A3 (en) White light emitting diode and method for fabricating the same
US20110037049A1 (en) Nitride semiconductor light-emitting device
TWI263387B (en) Light emitting device structure provided with nitride bulk mono-crystal layers
US5506423A (en) Semiconductor light-emitting device with ZnTe current spreading layer
EP1022825A4 (en) Gallium nitride semiconductor light emitting element with active layer having multiplex quantum well structure and semiconductor laser light source device
EP0844675A3 (en) Light-emitting gallium nitride-based compound semiconductor device
EP0898345A3 (en) Compound semiconductor light emitting device and method of fabricating the same
TW429635B (en) A light emitting diode and method of fabricating thereof
JPH0614564B2 (en) Semiconductor light emitting element
JP3464853B2 (en) Semiconductor laser
JP2004200303A (en) Light emitting diode
JP2004186678A5 (en)
JP2004304090A (en) Light emitting diode
EP1195864A3 (en) Semiconductor laser device
KR19980071848A (en) Semiconductor light emitting device and method of manufacturing the same
TW364215B (en) Epitaxial wafer and manufacturing method thereof as well as light-emitting diode with enhanced luminance

Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed