CA2395783A1 - Pendeoepitaxial gallium nitride layers grown on weak posts - Google Patents
Pendeoepitaxial gallium nitride layers grown on weak posts Download PDFInfo
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- CA2395783A1 CA2395783A1 CA002395783A CA2395783A CA2395783A1 CA 2395783 A1 CA2395783 A1 CA 2395783A1 CA 002395783 A CA002395783 A CA 002395783A CA 2395783 A CA2395783 A CA 2395783A CA 2395783 A1 CA2395783 A1 CA 2395783A1
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- gallium nitride
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- nitride semiconductor
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 240
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 236
- 239000000758 substrate Substances 0.000 claims abstract description 134
- 239000004065 semiconductor Substances 0.000 claims abstract description 112
- 230000003313 weakening effect Effects 0.000 claims abstract description 30
- 230000007547 defect Effects 0.000 claims abstract description 27
- 238000005336 cracking Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 58
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 150000002500 ions Chemical class 0.000 claims description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 7
- -1 hydrogen ions Chemical class 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 238000010008 shearing Methods 0.000 claims description 2
- 238000001816 cooling Methods 0.000 abstract description 7
- 238000000926 separation method Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 122
- 238000004377 microelectronic Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
- H01L21/0265—Pendeoepitaxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
Abstract
A gallium nitride layer (108) is pendeoepitaxially grown on weak posts (106) on a substrate (102) that are configured to crack due to a thermal expansion coefficient mismatch between the substrate (102) and the gallium nitride layer (108) on the weak posts. Thus, upon cooling, at least some of the weak posts (106) crack, to thereby relieve stress in the gallium nitride semiconductor layer (108). Accordingly, low defect density gallium nitride semiconductor layers (112) may be produced. Moreover, the weak posts can allow relatively easy separation of the substrate from the gallium nitride semiconductor layer to provide a freestanding gallium nitride layer (116). The weak posts may be formed by forming an array of posts in spaced apart staggered relation on the substrate. Alternatively, the posts may have a height to width ratio in excess of 0.5, so that the relatively narrow posts promote cracking upon reduction of the temperature. In another alternative, the posts preferably are less than one micron wide, more preferably less than one half micron wide, regardless of height. In yet another alternative, a post weakening region (902) is formed in the posts, adjacent the substrate.
Description
PENDEOEPITAXIAL METHODS OF FABRICATING GALLIUM NITRIDE
SEMICONDUCTOR LAYERS ON WEAK POSTS, AND GALLIUM NITRIDE
SEMICONDUCTOR STRUCTURES FABRICATED THEREBY
Federally Sponsored Research This invention was made with Government support under Office of Naval Research Contract Nos. N00014-96-1-0765, N00014-98-1-0384, and N00014-98-1-0654. The Government may have certain rights to this invention.
Field Of The Invention This invention relates to microelectronic devices and fabrication methods, and more particularly to gallium nitride semiconductor devices and fabrication methods therefor.
Background Of The Invention Gallium nitride is being widely investigated for microelectronic devices including but not limited to transistors, field emitters and optoelectronic devices. It will be understood that, as used herein, gallium nitride also includes alloys of gallium nitride such as aluminum gallium nitride, indium gallium nitride and aluminum indium gallium nitride.
A major problem in fabricating gallium nitride-based microelectronic devices is the fabrication of gallium nitride semiconductor layers having low defect densities.
It is known that one contributor to defect density is the substrate on which the gallium nitride layer is grown. Accordingly, although gallium nitride layers have been grown on sapphire substrates, it is known to reduce defect density by growing gallium nitride layers on aluminum nitride buffer layers which are themselves formed on silicon carbide substrates. Notwithstanding these advances, continued reduction in defect density is desirable.
It also is known to produce low defect density gallium nitride layers by forming a mask on a layer of gallium nitride, the mask including at least one opening therein that exposes the underlying layer of gallium nitride, and laterally growing the underlying layer of gallium nitride through the at least one opening and onto the mask. This technique often is referred to as "Epitaxial Lateral Overgrowth"
(ELO).
The layer of gallium nitride may be laterally grown until the gallium nitride coalesces on the mask to form a single layer on the mask. In order to form a continuous layer of gallium nitride with relatively low defect density, a second mask may be formed on the laterally overgrown gallium nitride layer, that includes at least one opening that is offset from the opening in the underlying mask. ELO then again is performed through the openings in the second mask to thereby overgrow a second low defect density continuous gallium nitride layer. Microelectronic devices then may be formed in this second overgrown layer. ELO of gallium nitride is described, for example, in the publications entitled Lateral Epitaxy of Low Defect Density GaN Layers Via Organometallic Vapor Phase Epitaxy to Nam et al., Appl. Phys. Lett. Vol. 71, No. 18, November 3, 1997, pp. 2638-2640; and Dislocation Density Reduction Via Lateral Epitaxy in Selectively Grown GaN Structures to Zheleva et al, Appl. Phys.
Lett., Vol.
71, No. 17, October 27, 1997, pp. 2472-2474, the disclosures of which are hereby incorporated herein by reference.
It also is known to produce a layer of gallium nitride with low defect density by forming at least one trench or post in an underlying layer of gallium nitride to define at least one sidewall therein. A layer of gallium nitride is then laterally grown from the at least one sidewall. Lateral growth preferably takes place until the laterally grown layers coalesce within the trenches. Lateral growth also preferably continues until the gallium nitride layer that is grown from the sidewalk laterally overgrows onto the tops of the posts. In order to facilitate lateral growth and produce nucleation of gallium nitride and growth in the vertical direction, the top of the posts and/or the trench floors may be masked. Lateral growth from the sidewalls of trenches and/or posts also is referred to as "pendeoepitaxy" and is described, for example, in publications entitled Pendeo-Epitaxy: A New Approach for Lateral Growth of Gallium Nitride Films by Zheleva et al., Journal of Electronic Materials, Vol.
28, No.
4, February 1999, pp. LS-L8; and Pendeoepitaxy of Gallium Nitride Thin Films by Linthicum et al., Applied Physics Letters, Vol. 75, No. 2, July 1999, pp. 196-198, the disclosures of which are hereby incorporated herein by reference.
Pendeoepitaxy can provide relatively large, low defect gallium nitride layers for microelectronic applications. Unfortunately, it has been found that pendeoepitaxially fabricates gallium nitride layers can have low defect densities during fabrication, but can exhibit cracks and other defects after fabrication. In particular, since the pendeoc;pitaxial layer generally is formed on a non-gallium nitride substrate, stress may occur in the pendeoepitaxial layer due to thermal expansion coefficient mismatch between the substrate and the pendeoepitaxial gallium nitride layer as the temperature is reduced from the elevated growth temperature to room temperature. This stress due to thermal expansion coefficient mismatch may create cracks and/or other defects in the gallium nitride semiconductor layer, which can greatly reduce the suitability thereof for microelectronic device applications.
Moreover, since the pendeoepitaxial gallium nitride layer is formed on a substrate, it may be difficult to provide a freestanding gallium nitride semiconductor layer that can be used as a large area seed for further gallium nitride bulk growth. The substrate can be removed to provide a freestanding gallium nitride semiconductor layer, but substrate removal may be difficult using conventional techniques, without damaging the gallium nitride semiconductor layer.
Accordingly, notwithstanding the recent advances of pendeoepitaxy, there continues to be a need for methods of fabricating gallium nitride semiconductor layers having low defect densities at room temperature and for fabricating freestanding gallium nitride semiconductor layers.
Summary Of The Invention The present invention pendeoepitaxially grows a gallium nitride layer on weak posts on a substrate that are configured to crack due to a thermal expansion coefficient mismatch between the substrate and the gallium nitride layer on the weak posts.
Thus, upon cooling, at least some of the weak posts crack, to thereby relieve stress in the gallium nitride semiconductor layer. Accordingly, low defect density gallium nitride semiconductor layers may be produced. Moreover, the weak posts can allow relatively easy separation of the substrate from the gallium nitride semiconductor layer to provide a freestanding gallium nitride layer.
More specifically, gallium nitride semiconductor layers may be fabricated by forming a plurality of weak posts on a substrate. The weak posts define a plurality of sidewalk and are configured to crack due to a thermal expansion coefficient mismatch between the substrate and the later formed gallium nitride semiconductor layer on the weak posts. A gallium nitride layer is grown from the sidewalls of the weak posts at elevated temperature, until the gallium nitride layer coalesces to produce a gallium nitride semiconductor layer. The gallium nitride layer preferably is grown using pendeoepitaxy so that the gallium nitride layer is cantilevered from the substrate. At least some of the weak posts then are cracked due to the thermal expansion coefficient mismatch between the substrate and the gallium nitride semiconductor layer upon reducing the elevated temperature. Stress in the gallium nitride semiconductor layer thereby can be relieved.
The weak posts may be formed by forming an array of posts in spaced apart staggered relation on the substrate. By staggering the posts, later fracturing may be promoted compared to long unstaggered posts. Alternatively, the posts may have a height to width ratio in excess of 0.5, so that the relatively narrow posts promote cracking upon reduction of the temperature. In another alternative, the posts preferably are less than one micron wide, more preferably less than one half micron wide, regardless of height, to promote cracking. In yet another alternative, a post weakening region is formed in the posts, adjacent the substrate. In particular, a buried region may be formed in the substrate and the substrate then may be selectively etched to define the plurality of weak posts including the post weakening regions that comprise the buried region. The buried region may comprise implanted ions, preferably hydrogen ions, that can agglomerate to form hydrogen bubbles within the posts that can fracture the posts upon cooling. It will be understood that each of the above-described techniques of staggered posts, narrow posts and post weakening regions may be used separately or in combination to produce weak posts on a substrate according to the present invention.
At least some of the weak posts crack due to the thermal expansion coefficient mismatch between the substrate and the gallium nitride semiconductor layer upon reducing the elevated temperature, to thereby relieve stress in the gallium nitride semiconductor layer. Thus, the pendeoepitaxial substrates act as an engineered weak platform. Instead of cracks occurring throughout the gallium nitride semiconductor layer, the cracks preferably occur at the posts and may actually shear some of the posts, leaving the gallium nitride semiconductor layer intact. Moreover, all of the weak posts may crack and/or shear, to thereby separate the gallium nitride semiconductor layer from the substrate and produce a freestanding gallium nitride semiconductor layer. Alternatively, the weak posts may facilitate the separation of the gallium nitride semiconductor layer from the substrate at the weakened posts, to produce a freestanding gallium nitride semiconductor layer. The freestanding gallium nitride semiconductor layer then may act as a large area seed for subsequent epitaxial growth of a gallium nitride layer on the freestanding gallium nitride semiconductor layer.
Gallium nitride semiconductor structures according to the present invention include a substrate, a plurality of posts on the substrate that include a plurality of sidewalls, and a gallium nitride semiconductor layer extending between the sidewalk of adjacent posts. At least one of the posts is cracked between the substrate and the gallium nitride layer. The plurality of posts may be in spaced apart staggered relation on the substrate. The plurality of posts may have a height to width ratio in excess of 0.5. The plurality of posts may be less than one micron and more preferably less than one half micron wide. The plurality of posts may include a post weakening region therein adjacent the substrate that contains bubbles, preferably hydrogen bubbles, therein.
Moreover, the present invention may provide a freestanding monocrystalline gallium nitride substrate having first and second opposing faces each having an area greater than 0.25 cm2 and having a defect density of less than 105 cm-Z. The structures may include at least one post extending from one of the faces, wherein the post is jagged. An array of spaced apart staggered posts, bubble posts and/or posts that are less than one half micron wide, may be provided. An epitaxial gallium nitride layer also may be provided on one of the first and second opposing faces of the freestanding gallium nitride layer. Accordingly, gallium nitride semiconductor layers that can exhibit reduced susceptibility to cracking after fabrication and relatively large area freestanding gallium nitride layers may be provided.
Brief Description Of The Drawings Figures 1-6 are cross-sectional views of gallium nitride semiconductor structures during intermediate fabrication steps, according to the present invention.
Figures 7 and 8 are top views of alternate embodiments of weak posts according to the present invention.
Figures 9-14 are cross-sectional views of other gallium nitride semiconductor structures during intermediate fabrication steps, according to the present invention.
-S-Detailed Description Of Preferred Embodiments The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein;
rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
In the drawings, the thickness of layers and regions are exaggerated for clarity. Like numbers refer to like elements throughout. It will be understood that when an element such as a layer, region or substrate is referred to as being "on"
another element, it can be directly on the other element or intervening elements may also be present. Moreover, each embodiment described and illustrated herein includes its complementary conductivity type embodiment as well.
Referring now to Figures 1-6, methods of fabricating gallium nitride semiconductor structures according to embodiments of the present invention now will be described. As shown in Figure l, an underlying gallium nitride layer 104 is grown on a substrate 102 using an optional intermediate buffer layer 103. The substrate may be silicon carbide. Alternatively, the substrate may be a silicon substrate, for example as described in Application Serial No. entitled Methods of Fabricating Gallium Nitride Microelectronic Layers on Silicon Layers arid Gallium Nitride Microelectronic Structures Formed Thereby to Linthicum et al., filed (Attorney Docket 5051-448), assigned to the assignee of the present application, the disclosure of which is hereby incorporated herein by reference. In another alternative, the substrate may be sapphire, for example as described in Application Serial No. 09/441,753 entitled Pendeoepitaxial Methods ofFabricating Gallium Nitride Semiconductor Layers on Sapphire Substrates, and Gallium Nitride Semiconductor Structures Fabricated Thereby to Gehrke et al, filed 09/441,753, assigned to the assignee of the present application, the disclosure of which is hereby incorporated herein by reference in its entirety. Other substrates also may be used.
As described in the above-cited applications, the buffer layer 103 may comprise aluminum nitride, gallium nitride and/or other materials. The fabrication of an underlying gallium nitride layer 104 on a substrate 102 using an optional buffer layer 103 is well known to those having skill in the art and need not be described in detail herein.
Refernng now to Fig~ire 2, the underlying gallium nitride layer 104 and optionally the buffer layer 1 ( 3 and also optionally part of the substrate 102 are etched to produce a plurality of posh 106 that define a plurality of trenches 107 therebetween. The alternating posts 106 and trenches 107 define a plurality of sidewalk 105 in the posts. The spaced apart posts 106 also may be referred to as "mesas", "pedestals" or "columns". The trenches also may be referred to as "wells".
It will be understood that the posts 106 and the trenches 107 that define the sidewalk 105 may be fabricated by selective etching, selective epitaxial growth and/or other conventional techniques. Moreover, it also will be understood that the sidewalls need not be orthogonal to the substrate 102, but rather may be oblique thereto.
Finally, it also will be understood that although the sidewalk 105 are shown in cross-section in Figure 1, the posts 106 and trenches 107 may define elongated regions that are straight, V-shaped or have other shapes.
The posts 106 are fabricated as "weak" posts. The weak posts are configured to crack due to a thermal coefficient mismatch between the substrate 102 and a later formed gallium nitride semiconductor layer on the weak posts. Figure 2 illustrates the control of the dimensions of the posts to provide the weak posts. In one embodiment, the height to width ratio of the posts 106 exceeds 0.5. In another embodiment, the posts may be of any arbitrary height, but are less than a predetermined width, preferably less than 1 Vim, more preferably less than O.S~m, and most preferably less than 0.25~m. In yet another embodiment, width and thickness (into the plane of Figure 2) of the posts are 0.25~m or less and l.O~m or less, respectively.
These narrow posts may be fabricated using electron beam photolithography or other lithography techniques.
Referring now to Figure 3, a gallium nitride layer 108 is grown at elevated temperature from the sidewalls 105 of the weak posts 106. As shown in Figure 3, the gallium nitride layer 108 preferably is spaced apart from or cantilevered from the floor of the trenches 107 to provide pendeoepitaxial growth.
As shown in Figure 4, growth of the gallium nitride layer 108 from the sidewalk 105 preferably continues until the gallium nitride layer 108 coalesces to produce a gallium nitride semiconductor layer 110. As also shown in Figure 4, growth may continue onto the tops of the weak posts 106. Pendeoepitaxial growth of gallium nitride from sidewalk is described in detail in the above-cited patent applications and publications, and need not be described in detail herein.
However, it should be noted that even though the underlying gallium nitride layer may have a defect density of 108 cm-Z or more, the gallium nitride semiconductor layer 110 may have a defect density of 105 cm-Z or less. Accordingly, a high quality gallium nitride semiconductor layer 110 may be provided.
As also shown in Figure 4, a first epitaxial gallium nitride layer 112 may be formed on the gallium nitride semiconductor layer. Since the gallium nitride semiconductor layer 110 provides a large area, for example 0.25 cm2 or more, growth platform having low defect density, the first epitaxial gallium nitride layer 112 may be grown using Hydride Vapor Phase Epitaxy (HVPE) at relatively high rates. The first epitaxial gallium nitride layer 112 preferably is grown to a thickness of at least 30pm, to provide mechanical stability for a freestanding gallium nitride structure.
Growth of the gallium nitride semiconductor layer 110 and the first epitaxial gallium nitride layer 112 preferably takes place at elevated temperature, for example at 1000°C or more.
Then, referring to Figure 5, the elevated growth temperature is decreased, preferably to room temperature, for example by reducing the heater temperature for the growth chamber, using forced cooling and/or removing the structure from the growth chamber. Preferably, cooling from 1000°C to room temperature takes place over at least 35 minutes, more preferably over at least 15 minutes. As shown in Figure 5, upon reduction of the temperature, at least some of the weak posts crack, as shown by cracks 114 therein. For example, at least 25%, and more preferably at least 50% of the weak posts crack. These cracks thereby relieve stress that is caused by the thermal expansion coefficient mismatch between the substrate 102 and the gallium nitride semiconductor layer 110 on the weak posts 106. As shown in Figure 5, the cracks 114 may appear in some or all of the weak posts. In fact, some or all of the weak posts actually may shear as shown at 115 in Figure 5. The weak posts preferably crack and/or shear between the gallium nitride layer 108 and the substrate 102. However, the actual location where the weak posts crack or shear may depend upon the dimensions and/or compositions of the weak posts and/or other factors.
Thus, although the weak posts are shown as cracking in the buffer layer 103, they also or alternatively may crack in the substrate portions of the weak posts or in the gallium nitride portions of the weak posts.
Thus, upon cooling, the weak posts relieve the stress that stems from thermal expansion coefficient mismatch. Accordingly, instead of cracks occurnng throughout _g_ the gallium nitride semiconductor layer 110, the cracks 114 occur in the weak posts and may actually produce shear 115 in some of the weak posts. The gallium nitride semiconductor layer and/or first gallium nitride epitaxial layer 112 therefore can remain crack-free and viable for fabrication of microelectronic devices.
Finally, refernng to Figure 6, the gallium nitride semiconductor layer 110 is separated from the substrate 102 at the weak posts to produce a freestanding gallium nitride semiconductor structure 116. As shown in Figure 6, the gallium nitride structure preferably includes a freestanding monocrystalline gallium nitride substrate, that is formed by layers 110 and/or 112 that has first and second opposing faces and a defect density of less than 105 cm-3. The faces of the freestanding monocrystalline gallium nitride substrate preferably have an area greater than 0.25 cmz and a thickness of at least 30~m. As shown in Figure 6, at least one remnant 106a of the posts extend from one of the faces. Due to the cracking and/or shearing, the post remnants 106a may have jagged ends.
It will be understood that the substrate may be removed using standard chemical and/or mechanical processes resulting in the fabrication of the freestanding gallium nitride structure 116. The gallium nitride structure 116 of low defect density then may be used as a seed substrate for further growth of low defect gallium nitride thereon. Thus, a second epitaxial layer 118 may be formed on the gallium nitride semiconductor layer 110 or on the first gallium nitride epitaxial layer 112.
The size of the freestanding low defect gallium nitride structure 116 may be limited only by the size of the initial substrate platform 102. Thus, large area freestanding gallium nitride substrates may be provided.
Figure 7 is a top view of alternate embodiments of weak posts according to the present invention. As shown in Figure 7, the posts may be weakened by forming an array of staggered posts 106 on the substrate 102, rather than forming long rows of continuous posts. It will be understood by those having skill in the art that staggering may be provided as an alternative to or in addition to providing the narrow posts of Figures 1-6.
Figure 8 is a top view of another alternate embodiment, wherein staggered posts 106' include tips 802 on the ends thereof. The tips 802 can reduce stresses during pendeoepitaxial growth therefrom.
Figures 9-14 illustrate other embodiments according to the present invention.
In general, Figures 9-14 illustrate forming post weakening regions in the posts, adjacent the substrate, preferably by implanting ions such as hydrogen ions in the posts. The hydrogen agglomerate to form bubbles which can then crack the post weakening regions upon cooling. The implantation of ions into a surface to promote wafer bonding and/or wafer splitting is described, for example, in U.S. Patent S 5,710,057 to Kenney entitled SOI Fabrication Method and U.S. Patent 5,877,070 to Goesele et al. entitled Method for the Transfer of Thin Layers of Monocrystalline Material to a Desirable Substrate. However, it will be understood that other methods of weakening the posts including implantation of various ions, selective etching of areas of the posts and/or other techniques may be used to form the post weakening region in the posts.
More specifically, referring now to Figure 9, an underlying gallium nitride layer 104 is formed on a substrate 102 including an intermediate buffer layer 103 as was described above in connection with Figure 1. However, in Figure 9, ions 902, preferably hydrogen ions, are implanted into the substrate 102. The ions may be implanted into the substrate 102 using conventional techniques. As also shown in Figure 9, an optional first mask 904 is formed on the underlying gallium nitride layer 104 opposite the buffer layer 103. As will be described below, this mask may reduce and preferably prevent gallium nitride nucleation and growth from the tops of the posts during pendeoepitaxy.
Then, referring to Figure 10, the weak posts are formed by etching through the mask 904, at least partly through the gallium nitride layer 104, optionally at least partly through the.buffer layer 103 and optionally at least partly through the substrate 102. As shown, the first mask 904 forms a cap 904' on the posts 106. As also shown in Figure 10, an optional second mask 908 may be formed the floors of the trenches 107. The second mask 908 may reduce and preferably prevent nucleation and growth of gallium nitride from the trench floors during pendeoepitaxy. It will be understood that masks 904' and 908 may be formed simultaneously, and preferably comprise the same material, such as silicon dioxide, silicon nitride and/or metal. However, they may be formed separately, and may comprise different materials.
For example, line-of sight deposition techniques, such as thermal evaporation or electron beam evaporation of mask materials such as silicon dioxide, silicon nitride and/or metal such as tungsten may be used. If the mask material is deposited after the etching step, it covers only the vertical surfaces, i.e. the top surfaces of the posts 106 and the bottom surfaces (floors) of the trenches 107. Gallium nitride preferably nucleates little, if at all, on tree masks 904' and 908, so that gallium nitride preferably only grows from the sidewal ss 105 of the posts during pendeoepitaxy.
Alternatively, the masks 904' and 908 may comprise different materials and/or be of different thicknesses. It also will be understood that one or both of the masks need not be formed, and one or both of the masks also may be used in the embodiments of Figures 1-8.
As shown in Figure 10, each post has a weakened region 902' that is formed by the ion implantation step. Although the weakened region 902' is shown in the substrate 102, it also or alternatively may be present in the buffer layer 103 and/or in the gallium nitride layer 104 that form the posts 106.
Referring now to Figure 1 l, pendeoepitaxy is performed as was described in connection with Figure 3. It also will be understood that the gallium nitride layer may grow from the sidewalk directly on the mask 908 without leaving a gap therebetween.
Then, as shown in Figure 12, the gallium nitride semiconductor layer 110 and the optional first epitaxial layer 112 are formed as was described above in connection with Figure 4.
Referring now to Figure 13, the elevated temperature at which the gallium nitride semiconductor layer 110 and the optional epitaxial gallium nitride layer 112 are formed then is reduced. The weakened area 902' of the weak posts 106 then crack due to the presence of the bubbles therein, to relieve stress in the gallium nitride semiconductor layer 110.
As shown in Figure 13, preferably all of the posts 106 are cracked and/or sheared at the post weakening regions 902', because the implanted layer 902 was uniformly implanted into the substrate in Figure 9. Alternatively, only some of the posts may be weakened or sheared, for example by selectively implanting the ions into the substrate 102.
Finally, referring to Figure 14, the substrate 102 is separated from the gallium nitride layers to produce a freestanding gallium nitride semiconductor structure 116, as was described in connection with Figure 6. As was the case for Figure 6, one or more posts 106a may extend from one of the faces of the structure. The posts in Figure 14 may be smooth rather than jagged due to the results of the implantation.
It also will be understood that the post weakening regions 902" may be used in combination with or instead of the narrow posts of Figures 1-6 and/or the staggered posts of Figures 7 and 8. Accordingly, large area gallium nitride semiconductor substrates, preferably greater than 0.25 cm2, may be fabricated with low defect densities, preferably less then 105 cm 2 over the entire surface thereof. The area of the freestanding low defect density gallium nitride semiconductor layer may limited only by the size of the initial substrate platform that was used to support the processing.
In the drawings and specification, there have been disclosed typical preferred embodiments of the invention and, although specific terms are employed, they are used in a generic and descriptive sense only and not for purposes of limitation, the scope of the invention being set forth in the following claims.
SEMICONDUCTOR LAYERS ON WEAK POSTS, AND GALLIUM NITRIDE
SEMICONDUCTOR STRUCTURES FABRICATED THEREBY
Federally Sponsored Research This invention was made with Government support under Office of Naval Research Contract Nos. N00014-96-1-0765, N00014-98-1-0384, and N00014-98-1-0654. The Government may have certain rights to this invention.
Field Of The Invention This invention relates to microelectronic devices and fabrication methods, and more particularly to gallium nitride semiconductor devices and fabrication methods therefor.
Background Of The Invention Gallium nitride is being widely investigated for microelectronic devices including but not limited to transistors, field emitters and optoelectronic devices. It will be understood that, as used herein, gallium nitride also includes alloys of gallium nitride such as aluminum gallium nitride, indium gallium nitride and aluminum indium gallium nitride.
A major problem in fabricating gallium nitride-based microelectronic devices is the fabrication of gallium nitride semiconductor layers having low defect densities.
It is known that one contributor to defect density is the substrate on which the gallium nitride layer is grown. Accordingly, although gallium nitride layers have been grown on sapphire substrates, it is known to reduce defect density by growing gallium nitride layers on aluminum nitride buffer layers which are themselves formed on silicon carbide substrates. Notwithstanding these advances, continued reduction in defect density is desirable.
It also is known to produce low defect density gallium nitride layers by forming a mask on a layer of gallium nitride, the mask including at least one opening therein that exposes the underlying layer of gallium nitride, and laterally growing the underlying layer of gallium nitride through the at least one opening and onto the mask. This technique often is referred to as "Epitaxial Lateral Overgrowth"
(ELO).
The layer of gallium nitride may be laterally grown until the gallium nitride coalesces on the mask to form a single layer on the mask. In order to form a continuous layer of gallium nitride with relatively low defect density, a second mask may be formed on the laterally overgrown gallium nitride layer, that includes at least one opening that is offset from the opening in the underlying mask. ELO then again is performed through the openings in the second mask to thereby overgrow a second low defect density continuous gallium nitride layer. Microelectronic devices then may be formed in this second overgrown layer. ELO of gallium nitride is described, for example, in the publications entitled Lateral Epitaxy of Low Defect Density GaN Layers Via Organometallic Vapor Phase Epitaxy to Nam et al., Appl. Phys. Lett. Vol. 71, No. 18, November 3, 1997, pp. 2638-2640; and Dislocation Density Reduction Via Lateral Epitaxy in Selectively Grown GaN Structures to Zheleva et al, Appl. Phys.
Lett., Vol.
71, No. 17, October 27, 1997, pp. 2472-2474, the disclosures of which are hereby incorporated herein by reference.
It also is known to produce a layer of gallium nitride with low defect density by forming at least one trench or post in an underlying layer of gallium nitride to define at least one sidewall therein. A layer of gallium nitride is then laterally grown from the at least one sidewall. Lateral growth preferably takes place until the laterally grown layers coalesce within the trenches. Lateral growth also preferably continues until the gallium nitride layer that is grown from the sidewalk laterally overgrows onto the tops of the posts. In order to facilitate lateral growth and produce nucleation of gallium nitride and growth in the vertical direction, the top of the posts and/or the trench floors may be masked. Lateral growth from the sidewalls of trenches and/or posts also is referred to as "pendeoepitaxy" and is described, for example, in publications entitled Pendeo-Epitaxy: A New Approach for Lateral Growth of Gallium Nitride Films by Zheleva et al., Journal of Electronic Materials, Vol.
28, No.
4, February 1999, pp. LS-L8; and Pendeoepitaxy of Gallium Nitride Thin Films by Linthicum et al., Applied Physics Letters, Vol. 75, No. 2, July 1999, pp. 196-198, the disclosures of which are hereby incorporated herein by reference.
Pendeoepitaxy can provide relatively large, low defect gallium nitride layers for microelectronic applications. Unfortunately, it has been found that pendeoepitaxially fabricates gallium nitride layers can have low defect densities during fabrication, but can exhibit cracks and other defects after fabrication. In particular, since the pendeoc;pitaxial layer generally is formed on a non-gallium nitride substrate, stress may occur in the pendeoepitaxial layer due to thermal expansion coefficient mismatch between the substrate and the pendeoepitaxial gallium nitride layer as the temperature is reduced from the elevated growth temperature to room temperature. This stress due to thermal expansion coefficient mismatch may create cracks and/or other defects in the gallium nitride semiconductor layer, which can greatly reduce the suitability thereof for microelectronic device applications.
Moreover, since the pendeoepitaxial gallium nitride layer is formed on a substrate, it may be difficult to provide a freestanding gallium nitride semiconductor layer that can be used as a large area seed for further gallium nitride bulk growth. The substrate can be removed to provide a freestanding gallium nitride semiconductor layer, but substrate removal may be difficult using conventional techniques, without damaging the gallium nitride semiconductor layer.
Accordingly, notwithstanding the recent advances of pendeoepitaxy, there continues to be a need for methods of fabricating gallium nitride semiconductor layers having low defect densities at room temperature and for fabricating freestanding gallium nitride semiconductor layers.
Summary Of The Invention The present invention pendeoepitaxially grows a gallium nitride layer on weak posts on a substrate that are configured to crack due to a thermal expansion coefficient mismatch between the substrate and the gallium nitride layer on the weak posts.
Thus, upon cooling, at least some of the weak posts crack, to thereby relieve stress in the gallium nitride semiconductor layer. Accordingly, low defect density gallium nitride semiconductor layers may be produced. Moreover, the weak posts can allow relatively easy separation of the substrate from the gallium nitride semiconductor layer to provide a freestanding gallium nitride layer.
More specifically, gallium nitride semiconductor layers may be fabricated by forming a plurality of weak posts on a substrate. The weak posts define a plurality of sidewalk and are configured to crack due to a thermal expansion coefficient mismatch between the substrate and the later formed gallium nitride semiconductor layer on the weak posts. A gallium nitride layer is grown from the sidewalls of the weak posts at elevated temperature, until the gallium nitride layer coalesces to produce a gallium nitride semiconductor layer. The gallium nitride layer preferably is grown using pendeoepitaxy so that the gallium nitride layer is cantilevered from the substrate. At least some of the weak posts then are cracked due to the thermal expansion coefficient mismatch between the substrate and the gallium nitride semiconductor layer upon reducing the elevated temperature. Stress in the gallium nitride semiconductor layer thereby can be relieved.
The weak posts may be formed by forming an array of posts in spaced apart staggered relation on the substrate. By staggering the posts, later fracturing may be promoted compared to long unstaggered posts. Alternatively, the posts may have a height to width ratio in excess of 0.5, so that the relatively narrow posts promote cracking upon reduction of the temperature. In another alternative, the posts preferably are less than one micron wide, more preferably less than one half micron wide, regardless of height, to promote cracking. In yet another alternative, a post weakening region is formed in the posts, adjacent the substrate. In particular, a buried region may be formed in the substrate and the substrate then may be selectively etched to define the plurality of weak posts including the post weakening regions that comprise the buried region. The buried region may comprise implanted ions, preferably hydrogen ions, that can agglomerate to form hydrogen bubbles within the posts that can fracture the posts upon cooling. It will be understood that each of the above-described techniques of staggered posts, narrow posts and post weakening regions may be used separately or in combination to produce weak posts on a substrate according to the present invention.
At least some of the weak posts crack due to the thermal expansion coefficient mismatch between the substrate and the gallium nitride semiconductor layer upon reducing the elevated temperature, to thereby relieve stress in the gallium nitride semiconductor layer. Thus, the pendeoepitaxial substrates act as an engineered weak platform. Instead of cracks occurring throughout the gallium nitride semiconductor layer, the cracks preferably occur at the posts and may actually shear some of the posts, leaving the gallium nitride semiconductor layer intact. Moreover, all of the weak posts may crack and/or shear, to thereby separate the gallium nitride semiconductor layer from the substrate and produce a freestanding gallium nitride semiconductor layer. Alternatively, the weak posts may facilitate the separation of the gallium nitride semiconductor layer from the substrate at the weakened posts, to produce a freestanding gallium nitride semiconductor layer. The freestanding gallium nitride semiconductor layer then may act as a large area seed for subsequent epitaxial growth of a gallium nitride layer on the freestanding gallium nitride semiconductor layer.
Gallium nitride semiconductor structures according to the present invention include a substrate, a plurality of posts on the substrate that include a plurality of sidewalls, and a gallium nitride semiconductor layer extending between the sidewalk of adjacent posts. At least one of the posts is cracked between the substrate and the gallium nitride layer. The plurality of posts may be in spaced apart staggered relation on the substrate. The plurality of posts may have a height to width ratio in excess of 0.5. The plurality of posts may be less than one micron and more preferably less than one half micron wide. The plurality of posts may include a post weakening region therein adjacent the substrate that contains bubbles, preferably hydrogen bubbles, therein.
Moreover, the present invention may provide a freestanding monocrystalline gallium nitride substrate having first and second opposing faces each having an area greater than 0.25 cm2 and having a defect density of less than 105 cm-Z. The structures may include at least one post extending from one of the faces, wherein the post is jagged. An array of spaced apart staggered posts, bubble posts and/or posts that are less than one half micron wide, may be provided. An epitaxial gallium nitride layer also may be provided on one of the first and second opposing faces of the freestanding gallium nitride layer. Accordingly, gallium nitride semiconductor layers that can exhibit reduced susceptibility to cracking after fabrication and relatively large area freestanding gallium nitride layers may be provided.
Brief Description Of The Drawings Figures 1-6 are cross-sectional views of gallium nitride semiconductor structures during intermediate fabrication steps, according to the present invention.
Figures 7 and 8 are top views of alternate embodiments of weak posts according to the present invention.
Figures 9-14 are cross-sectional views of other gallium nitride semiconductor structures during intermediate fabrication steps, according to the present invention.
-S-Detailed Description Of Preferred Embodiments The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein;
rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
In the drawings, the thickness of layers and regions are exaggerated for clarity. Like numbers refer to like elements throughout. It will be understood that when an element such as a layer, region or substrate is referred to as being "on"
another element, it can be directly on the other element or intervening elements may also be present. Moreover, each embodiment described and illustrated herein includes its complementary conductivity type embodiment as well.
Referring now to Figures 1-6, methods of fabricating gallium nitride semiconductor structures according to embodiments of the present invention now will be described. As shown in Figure l, an underlying gallium nitride layer 104 is grown on a substrate 102 using an optional intermediate buffer layer 103. The substrate may be silicon carbide. Alternatively, the substrate may be a silicon substrate, for example as described in Application Serial No. entitled Methods of Fabricating Gallium Nitride Microelectronic Layers on Silicon Layers arid Gallium Nitride Microelectronic Structures Formed Thereby to Linthicum et al., filed (Attorney Docket 5051-448), assigned to the assignee of the present application, the disclosure of which is hereby incorporated herein by reference. In another alternative, the substrate may be sapphire, for example as described in Application Serial No. 09/441,753 entitled Pendeoepitaxial Methods ofFabricating Gallium Nitride Semiconductor Layers on Sapphire Substrates, and Gallium Nitride Semiconductor Structures Fabricated Thereby to Gehrke et al, filed 09/441,753, assigned to the assignee of the present application, the disclosure of which is hereby incorporated herein by reference in its entirety. Other substrates also may be used.
As described in the above-cited applications, the buffer layer 103 may comprise aluminum nitride, gallium nitride and/or other materials. The fabrication of an underlying gallium nitride layer 104 on a substrate 102 using an optional buffer layer 103 is well known to those having skill in the art and need not be described in detail herein.
Refernng now to Fig~ire 2, the underlying gallium nitride layer 104 and optionally the buffer layer 1 ( 3 and also optionally part of the substrate 102 are etched to produce a plurality of posh 106 that define a plurality of trenches 107 therebetween. The alternating posts 106 and trenches 107 define a plurality of sidewalk 105 in the posts. The spaced apart posts 106 also may be referred to as "mesas", "pedestals" or "columns". The trenches also may be referred to as "wells".
It will be understood that the posts 106 and the trenches 107 that define the sidewalk 105 may be fabricated by selective etching, selective epitaxial growth and/or other conventional techniques. Moreover, it also will be understood that the sidewalls need not be orthogonal to the substrate 102, but rather may be oblique thereto.
Finally, it also will be understood that although the sidewalk 105 are shown in cross-section in Figure 1, the posts 106 and trenches 107 may define elongated regions that are straight, V-shaped or have other shapes.
The posts 106 are fabricated as "weak" posts. The weak posts are configured to crack due to a thermal coefficient mismatch between the substrate 102 and a later formed gallium nitride semiconductor layer on the weak posts. Figure 2 illustrates the control of the dimensions of the posts to provide the weak posts. In one embodiment, the height to width ratio of the posts 106 exceeds 0.5. In another embodiment, the posts may be of any arbitrary height, but are less than a predetermined width, preferably less than 1 Vim, more preferably less than O.S~m, and most preferably less than 0.25~m. In yet another embodiment, width and thickness (into the plane of Figure 2) of the posts are 0.25~m or less and l.O~m or less, respectively.
These narrow posts may be fabricated using electron beam photolithography or other lithography techniques.
Referring now to Figure 3, a gallium nitride layer 108 is grown at elevated temperature from the sidewalls 105 of the weak posts 106. As shown in Figure 3, the gallium nitride layer 108 preferably is spaced apart from or cantilevered from the floor of the trenches 107 to provide pendeoepitaxial growth.
As shown in Figure 4, growth of the gallium nitride layer 108 from the sidewalk 105 preferably continues until the gallium nitride layer 108 coalesces to produce a gallium nitride semiconductor layer 110. As also shown in Figure 4, growth may continue onto the tops of the weak posts 106. Pendeoepitaxial growth of gallium nitride from sidewalk is described in detail in the above-cited patent applications and publications, and need not be described in detail herein.
However, it should be noted that even though the underlying gallium nitride layer may have a defect density of 108 cm-Z or more, the gallium nitride semiconductor layer 110 may have a defect density of 105 cm-Z or less. Accordingly, a high quality gallium nitride semiconductor layer 110 may be provided.
As also shown in Figure 4, a first epitaxial gallium nitride layer 112 may be formed on the gallium nitride semiconductor layer. Since the gallium nitride semiconductor layer 110 provides a large area, for example 0.25 cm2 or more, growth platform having low defect density, the first epitaxial gallium nitride layer 112 may be grown using Hydride Vapor Phase Epitaxy (HVPE) at relatively high rates. The first epitaxial gallium nitride layer 112 preferably is grown to a thickness of at least 30pm, to provide mechanical stability for a freestanding gallium nitride structure.
Growth of the gallium nitride semiconductor layer 110 and the first epitaxial gallium nitride layer 112 preferably takes place at elevated temperature, for example at 1000°C or more.
Then, referring to Figure 5, the elevated growth temperature is decreased, preferably to room temperature, for example by reducing the heater temperature for the growth chamber, using forced cooling and/or removing the structure from the growth chamber. Preferably, cooling from 1000°C to room temperature takes place over at least 35 minutes, more preferably over at least 15 minutes. As shown in Figure 5, upon reduction of the temperature, at least some of the weak posts crack, as shown by cracks 114 therein. For example, at least 25%, and more preferably at least 50% of the weak posts crack. These cracks thereby relieve stress that is caused by the thermal expansion coefficient mismatch between the substrate 102 and the gallium nitride semiconductor layer 110 on the weak posts 106. As shown in Figure 5, the cracks 114 may appear in some or all of the weak posts. In fact, some or all of the weak posts actually may shear as shown at 115 in Figure 5. The weak posts preferably crack and/or shear between the gallium nitride layer 108 and the substrate 102. However, the actual location where the weak posts crack or shear may depend upon the dimensions and/or compositions of the weak posts and/or other factors.
Thus, although the weak posts are shown as cracking in the buffer layer 103, they also or alternatively may crack in the substrate portions of the weak posts or in the gallium nitride portions of the weak posts.
Thus, upon cooling, the weak posts relieve the stress that stems from thermal expansion coefficient mismatch. Accordingly, instead of cracks occurnng throughout _g_ the gallium nitride semiconductor layer 110, the cracks 114 occur in the weak posts and may actually produce shear 115 in some of the weak posts. The gallium nitride semiconductor layer and/or first gallium nitride epitaxial layer 112 therefore can remain crack-free and viable for fabrication of microelectronic devices.
Finally, refernng to Figure 6, the gallium nitride semiconductor layer 110 is separated from the substrate 102 at the weak posts to produce a freestanding gallium nitride semiconductor structure 116. As shown in Figure 6, the gallium nitride structure preferably includes a freestanding monocrystalline gallium nitride substrate, that is formed by layers 110 and/or 112 that has first and second opposing faces and a defect density of less than 105 cm-3. The faces of the freestanding monocrystalline gallium nitride substrate preferably have an area greater than 0.25 cmz and a thickness of at least 30~m. As shown in Figure 6, at least one remnant 106a of the posts extend from one of the faces. Due to the cracking and/or shearing, the post remnants 106a may have jagged ends.
It will be understood that the substrate may be removed using standard chemical and/or mechanical processes resulting in the fabrication of the freestanding gallium nitride structure 116. The gallium nitride structure 116 of low defect density then may be used as a seed substrate for further growth of low defect gallium nitride thereon. Thus, a second epitaxial layer 118 may be formed on the gallium nitride semiconductor layer 110 or on the first gallium nitride epitaxial layer 112.
The size of the freestanding low defect gallium nitride structure 116 may be limited only by the size of the initial substrate platform 102. Thus, large area freestanding gallium nitride substrates may be provided.
Figure 7 is a top view of alternate embodiments of weak posts according to the present invention. As shown in Figure 7, the posts may be weakened by forming an array of staggered posts 106 on the substrate 102, rather than forming long rows of continuous posts. It will be understood by those having skill in the art that staggering may be provided as an alternative to or in addition to providing the narrow posts of Figures 1-6.
Figure 8 is a top view of another alternate embodiment, wherein staggered posts 106' include tips 802 on the ends thereof. The tips 802 can reduce stresses during pendeoepitaxial growth therefrom.
Figures 9-14 illustrate other embodiments according to the present invention.
In general, Figures 9-14 illustrate forming post weakening regions in the posts, adjacent the substrate, preferably by implanting ions such as hydrogen ions in the posts. The hydrogen agglomerate to form bubbles which can then crack the post weakening regions upon cooling. The implantation of ions into a surface to promote wafer bonding and/or wafer splitting is described, for example, in U.S. Patent S 5,710,057 to Kenney entitled SOI Fabrication Method and U.S. Patent 5,877,070 to Goesele et al. entitled Method for the Transfer of Thin Layers of Monocrystalline Material to a Desirable Substrate. However, it will be understood that other methods of weakening the posts including implantation of various ions, selective etching of areas of the posts and/or other techniques may be used to form the post weakening region in the posts.
More specifically, referring now to Figure 9, an underlying gallium nitride layer 104 is formed on a substrate 102 including an intermediate buffer layer 103 as was described above in connection with Figure 1. However, in Figure 9, ions 902, preferably hydrogen ions, are implanted into the substrate 102. The ions may be implanted into the substrate 102 using conventional techniques. As also shown in Figure 9, an optional first mask 904 is formed on the underlying gallium nitride layer 104 opposite the buffer layer 103. As will be described below, this mask may reduce and preferably prevent gallium nitride nucleation and growth from the tops of the posts during pendeoepitaxy.
Then, referring to Figure 10, the weak posts are formed by etching through the mask 904, at least partly through the gallium nitride layer 104, optionally at least partly through the.buffer layer 103 and optionally at least partly through the substrate 102. As shown, the first mask 904 forms a cap 904' on the posts 106. As also shown in Figure 10, an optional second mask 908 may be formed the floors of the trenches 107. The second mask 908 may reduce and preferably prevent nucleation and growth of gallium nitride from the trench floors during pendeoepitaxy. It will be understood that masks 904' and 908 may be formed simultaneously, and preferably comprise the same material, such as silicon dioxide, silicon nitride and/or metal. However, they may be formed separately, and may comprise different materials.
For example, line-of sight deposition techniques, such as thermal evaporation or electron beam evaporation of mask materials such as silicon dioxide, silicon nitride and/or metal such as tungsten may be used. If the mask material is deposited after the etching step, it covers only the vertical surfaces, i.e. the top surfaces of the posts 106 and the bottom surfaces (floors) of the trenches 107. Gallium nitride preferably nucleates little, if at all, on tree masks 904' and 908, so that gallium nitride preferably only grows from the sidewal ss 105 of the posts during pendeoepitaxy.
Alternatively, the masks 904' and 908 may comprise different materials and/or be of different thicknesses. It also will be understood that one or both of the masks need not be formed, and one or both of the masks also may be used in the embodiments of Figures 1-8.
As shown in Figure 10, each post has a weakened region 902' that is formed by the ion implantation step. Although the weakened region 902' is shown in the substrate 102, it also or alternatively may be present in the buffer layer 103 and/or in the gallium nitride layer 104 that form the posts 106.
Referring now to Figure 1 l, pendeoepitaxy is performed as was described in connection with Figure 3. It also will be understood that the gallium nitride layer may grow from the sidewalk directly on the mask 908 without leaving a gap therebetween.
Then, as shown in Figure 12, the gallium nitride semiconductor layer 110 and the optional first epitaxial layer 112 are formed as was described above in connection with Figure 4.
Referring now to Figure 13, the elevated temperature at which the gallium nitride semiconductor layer 110 and the optional epitaxial gallium nitride layer 112 are formed then is reduced. The weakened area 902' of the weak posts 106 then crack due to the presence of the bubbles therein, to relieve stress in the gallium nitride semiconductor layer 110.
As shown in Figure 13, preferably all of the posts 106 are cracked and/or sheared at the post weakening regions 902', because the implanted layer 902 was uniformly implanted into the substrate in Figure 9. Alternatively, only some of the posts may be weakened or sheared, for example by selectively implanting the ions into the substrate 102.
Finally, referring to Figure 14, the substrate 102 is separated from the gallium nitride layers to produce a freestanding gallium nitride semiconductor structure 116, as was described in connection with Figure 6. As was the case for Figure 6, one or more posts 106a may extend from one of the faces of the structure. The posts in Figure 14 may be smooth rather than jagged due to the results of the implantation.
It also will be understood that the post weakening regions 902" may be used in combination with or instead of the narrow posts of Figures 1-6 and/or the staggered posts of Figures 7 and 8. Accordingly, large area gallium nitride semiconductor substrates, preferably greater than 0.25 cm2, may be fabricated with low defect densities, preferably less then 105 cm 2 over the entire surface thereof. The area of the freestanding low defect density gallium nitride semiconductor layer may limited only by the size of the initial substrate platform that was used to support the processing.
In the drawings and specification, there have been disclosed typical preferred embodiments of the invention and, although specific terms are employed, they are used in a generic and descriptive sense only and not for purposes of limitation, the scope of the invention being set forth in the following claims.
Claims (79)
1. A method of fabricating a gallium nitride semiconductor layer comprising the steps of:
forming a plurality of weak posts on a substrate, the weak posts defining a plurality of sidewalls, the weak posts being configured to crack due to a thermal expansion coefficient mismatch between the substrate and a later formed gallium nitride semiconductor layer on the weak posts;
growing a gallium nitride layer from the sidewalls of the weak posts at elevated temperature, until the gallium nitride layer coalesces to produce a gallium nitride semiconductor layer; and cracking at least some of the weak posts due to the thermal expansion coefficient mismatch between the substrate and the gallium nitride semiconductor layer upon reducing the elevated temperature, to thereby relieve stress in the gallium nitride semiconductor layer.
forming a plurality of weak posts on a substrate, the weak posts defining a plurality of sidewalls, the weak posts being configured to crack due to a thermal expansion coefficient mismatch between the substrate and a later formed gallium nitride semiconductor layer on the weak posts;
growing a gallium nitride layer from the sidewalls of the weak posts at elevated temperature, until the gallium nitride layer coalesces to produce a gallium nitride semiconductor layer; and cracking at least some of the weak posts due to the thermal expansion coefficient mismatch between the substrate and the gallium nitride semiconductor layer upon reducing the elevated temperature, to thereby relieve stress in the gallium nitride semiconductor layer.
2. A method according to Claim 1:
wherein the growing step comprises the step of pendeoepitaxially growing, at elevated temperature, a gallium nitride layer from the sidewalls of the weak posts, that is cantilevered from the substrate, until the cantilevered gallium nitride layer coalesces to produce a gallium nitride semiconductor layer; and wherein the cracking step comprises the step of cracking at least some of the weak posts between the substrate and the cantilevered gallium nitride layer due to the thermal expansion coefficient mismatch between the substrate and the gallium nitride semiconductor layer upon reducing the elevated temperature, to thereby relieve stress in the gallium nitride semiconductor layer.
wherein the growing step comprises the step of pendeoepitaxially growing, at elevated temperature, a gallium nitride layer from the sidewalls of the weak posts, that is cantilevered from the substrate, until the cantilevered gallium nitride layer coalesces to produce a gallium nitride semiconductor layer; and wherein the cracking step comprises the step of cracking at least some of the weak posts between the substrate and the cantilevered gallium nitride layer due to the thermal expansion coefficient mismatch between the substrate and the gallium nitride semiconductor layer upon reducing the elevated temperature, to thereby relieve stress in the gallium nitride semiconductor layer.
3. A method according to Claim 1 wherein the forming step comprises the step of forming an array of posts in spaced apart relation on the substrate.
4. A method according to Claim 1 wherein the forming step comprises the step of forming a plurality of posts having a height-to-width ratio in excess of 0.5 on the substrate.
5. A method according to Claim 1 wherein the forming step comprises the step of forming a post weakening region in the posts, adjacent the substrate.
6. A method according to Claim 5 wherein the step of forming a post weakening region comprises the steps of:
forming a buried region in the substrate; and selectively etching the substrate to define the plurality of weak posts including the post weakening regions that comprise the buried region, adjacent the substrate.
forming a buried region in the substrate; and selectively etching the substrate to define the plurality of weak posts including the post weakening regions that comprise the buried region, adjacent the substrate.
7. A method according to Claim 6 wherein the step of forming a buried region comprises the step of implanting ions beneath the substrate surface.
8. A method according to Claim 6 wherein the ions are hydrogen ions.
9. A method according to Claim 1 wherein the step of cracking comprises the step of shearing at least some of the weak posts due to the thermal expansion coefficient mismatch between the substrate and the gallium nitride semiconductor layer upon reducing the elevated temperature, to thereby relieve stress in the gallium nitride semiconductor layer.
10. A method according to Claim 1 wherein the step of cracking comprises the step of cracking all of the weak posts due to the thermal expansion coefficient mismatch between the substrate and the gallium nitride semiconductor layer upon reducing the elevated temperature, to thereby separate the gallium nitride semiconductor layer from the substrate and produce a freestanding gallium nitride semiconductor layer.
11. A method according to Claim 1 wherein the cracking step is followed by the step of separating the gallium nitride semiconductor layer from the substrate at the weakened posts to produce a freestanding gallium nitride semiconductor layer.
12. A method according to Claim 11 wherein the separating step is followed by the step of epitaxially growing a gallium nitride layer on the freestanding gallium nitride semiconductor layer.
13. A method according to Claim 1 wherein the following step is performed between the steps of growing and cracking:
epitaxially growing a gallium nitride layer on the gallium nitride semiconductor layer.
epitaxially growing a gallium nitride layer on the gallium nitride semiconductor layer.
14. A method of fabricating a gallium nitride semiconductor layer comprising the steps of:
forming an array of posts on a substrate in spaced apart relation to define a plurality of sidewalls;
growing a gallium nitride layer from the sidewalls of the spaced apart posts at elevated temperature, until the gallium nitride layer coalesces to produce a gallium nitride semiconductor layer; and reducing the elevated temperature.
forming an array of posts on a substrate in spaced apart relation to define a plurality of sidewalls;
growing a gallium nitride layer from the sidewalls of the spaced apart posts at elevated temperature, until the gallium nitride layer coalesces to produce a gallium nitride semiconductor layer; and reducing the elevated temperature.
15. A method according to Claim 14 wherein the growing step comprises the step of pendeoepitaxially growing, at elevated temperature, a gallium nitride layer from the sidewalls of the spaced apart posts, that is cantilevered from the substrate, until the cantilevered gallium nitride layer coalesces to produce a gallium nitride semiconductor layer.
16. A method according to Claim 14 wherein the forming step comprises the step of forming a plurality of spaced apart posts having a height-to-width ratio in excess of 0.5 on the substrate.
17. A method according to Claim 14 wherein the forming step comprises the step of forming a post weakening region in the spaced apart posts, adjacent the substrate.
18. A method according to Claim 16 wherein the forming step comprises the step of forming a post weakening region in the spaced apart posts, adjacent the substrate.
19. A method according to Claim 14 wherein the reducing step is followed by the step of separating the gallium nitride semiconductor layer from the substrate at the posts to produce a freestanding gallium nitride semiconductor layer.
20. A method according to Claim 19 wherein the separating step is followed by the step of epitaxially growing a gallium nitride layer on the freestanding gallium nitride semiconductor layer.
21. A method according to Claim 15 wherein the following step is performed between the steps of growing and reducing:
epitaxially growing a gallium nitride layer on the gallium nitride semiconductor layer.
epitaxially growing a gallium nitride layer on the gallium nitride semiconductor layer.
22. A method of fabricating a gallium nitride semiconductor layer comprising the steps of:
forming a plurality of posts having a height-to-width ratio in excess of 0.5 on a substrate to define a plurality of sidewalls;
growing a gallium nitride layer from the sidewalls of the posts having a height-to-width ratio in excess of 0.5 at elevated temperature, until the gallium nitride layer coalesces to produce a gallium nitride semiconductor layer; and reducing the elevated temperature.
forming a plurality of posts having a height-to-width ratio in excess of 0.5 on a substrate to define a plurality of sidewalls;
growing a gallium nitride layer from the sidewalls of the posts having a height-to-width ratio in excess of 0.5 at elevated temperature, until the gallium nitride layer coalesces to produce a gallium nitride semiconductor layer; and reducing the elevated temperature.
23. A method according to Claim 22 wherein the growing step comprises the step of pendeoepitaxially growing, at elevated temperature, a gallium nitride layer from the sidewalls of the posts having a height-to-width ratio in excess of 0.5, that is cantilevered from the substrate, until the cantilevered gallium nitride layer coalesces to produce a gallium nitride semiconductor layer.
24. A method according to Claim 22 wherein the forming step comprises the step of forming a post weakening region in the posts having a height-to-width ratio in excess of 0.5, adjacent the substrate.
25. A method according to Claim 22 wherein the reducing step is followed by the step of separating the gallium nitride semiconductor layer from the substrate at the posts to produce a freestanding gallium nitride semiconductor layer.
26. A method according to Claim 25 wherein the separating step is followed by the step of epitaxially growing a gallium nitride layer on the freestanding gallium nitride semiconductor layer.
27. A method according to Claim 22 wherein the following step is performed between the steps of growing and reducing:
epitaxially growing a gallium nitride layer on the gallium nitride semiconductor layer.
epitaxially growing a gallium nitride layer on the gallium nitride semiconductor layer.
28. A method of fabricating a gallium nitride semiconductor layer comprising the steps of:
forming a plurality of posts on a substrate, the posts defining a plurality of sidewalls, the posts including therein a post weakening region adjacent the substrate;
growing a gallium nitride layer from the sidewalls of the weak posts at elevated temperature, until the gallium nitride layer coalesces to produce a gallium nitride semiconductor layer; and reducing the elevated temperature.
forming a plurality of posts on a substrate, the posts defining a plurality of sidewalls, the posts including therein a post weakening region adjacent the substrate;
growing a gallium nitride layer from the sidewalls of the weak posts at elevated temperature, until the gallium nitride layer coalesces to produce a gallium nitride semiconductor layer; and reducing the elevated temperature.
29. A method according to Claim 28 wherein the growing step comprises the step of pendeoepitaxially growing, at elevated temperature, a gallium nitride layer from the sidewalls posts including therein a post weakening region adjacent the substrate, that is cantilevered from the substrate, until the cantilevered gallium nitride layer coalesces to produce a gallium nitride semiconductor layer.
30. A method according to Claim 28 wherein the forming step comprises the step of forming a plurality posts including therein a post weakening region adjacent the substrate and having a height-to-width ratio in excess of 0.5.
31. A method according to Claim 28 wherein the step of forming comprises the steps of:
forming a buried region in the substrate; and selectively etching the substrate to define the plurality of weak posts including the post weakening regions adjacent the substrate.
forming a buried region in the substrate; and selectively etching the substrate to define the plurality of weak posts including the post weakening regions adjacent the substrate.
32. A method according to Claim 31 wherein the step of forming a buried region comprises the step of implanting ions beneath the substrate surface.
33. A method according to Claim 32 wherein the ions are hydrogen ions.
34. A method according to Claim 28 wherein the reducing step is followed by the step of separating the gallium nitride semiconductor layer from the substrate at the post weakening regions to produce a freestanding gallium nitride semiconductor layer.
35. A method according to Claim 34 wherein the separating step is followed by the step of epitaxially growing a gallium nitride layer on the freestanding gallium nitride semiconductor layer.
36. A method according to Claim 28 wherein the following step is performed between the steps of growing and reducing:
epitaxially growing a gallium nitride layer on the gallium nitride semiconductor layer.
epitaxially growing a gallium nitride layer on the gallium nitride semiconductor layer.
37. A gallium nitride semiconductor structure comprising:
a substrate;
a plurality of posts on the substrate that include a plurality of sidewalls;
and a gallium nitride layer extending between the sidewalls of adjacent posts;
wherein at least one of the posts is cracked between the substrate and the gallium nitride layer.
a substrate;
a plurality of posts on the substrate that include a plurality of sidewalls;
and a gallium nitride layer extending between the sidewalls of adjacent posts;
wherein at least one of the posts is cracked between the substrate and the gallium nitride layer.
38. A structure according to Claim 37 wherein the gallium nitride semiconductor layer extends between the sidewalls of adjacent posts and is spaced apart from the substrate.
39. A structure according to Claim 37 wherein the plurality of posts comprise an array of posts in spaced apart relation on the substrate.
40. A structure according to Claim 37 wherein the plurality of posts have a height-to-width ratio in excess of 0.5.
41. A structure according to Claim 37 wherein the plurality of posts are less than one half micron wide.
42. A structure according to Claim 37 wherein the posts include a post weakening region therein, adjacent the substrate.
43. A structure according to Claim 42 wherein the post weakening region contains bubbles therein.
44. A structure according to Claim 43 wherein the bubbles are hydrogen bubbles.
45. A structure according to Claim 37 wherein at least some of the posts are cracked and sheared between the substrate and the gallium nitride layer.
46. A structure according to Claim 39 wherein the plurality of posts have a height-to-width ratio in excess of 0.5.
47. A structure according to Claim 39 wherein the plurality of posts are less than one half micron wide.
48. A structure according to Claim 39 wherein the posts include a post weakening region therein, adjacent the substrate.
49. A structure according to Claim 40 wherein the plurality of posts are less than one half micron wide.
50. A structure according to Claim 40 wherein the posts include a post weakening region therein, adjacent the substrate.
51. A structure according to Claim 41 wherein the posts include a post weakening region therein, adjacent the substrate.
52. A structure according to Claim 37 wherein the posts include tips on the ends thereof.
53. A structure according to Claim 37 further comprising an epitaxial gallium nitride layer on the gallium nitride semiconductor layer.
54. A semiconductor structure comprising:
a freestanding monocrystalline gallium nitride substrate having first and second opposing faces each having an area of greater than 0.25 cm2, the freestanding monocrystalline gallium nitride substrate having a defect density of less than 10 5 cm-2.
a freestanding monocrystalline gallium nitride substrate having first and second opposing faces each having an area of greater than 0.25 cm2, the freestanding monocrystalline gallium nitride substrate having a defect density of less than 10 5 cm-2.
55. A structure according to Claim 54 further comprising at least one post extending from one of the faces.
56. A structure according to Claim 55 wherein the at least one post includes a jagged end.
57. A structure according to Claim 55 wherein the at least one post comprises an array of spaced apart posts.
58. A structure according to Claim 55 wherein the at least one post includes bubbles therein.
59. A structure according to Claim 55 wherein the at least one post is less than one half micron wide.
60. A structure according to Claim 54 further comprising an epitaxial gallium nitride layer on one of the first and second opposing faces of the freestanding gallium nitride layer.
61. A structure according to Claim 57 wherein the at least one post includes a jagged end.
62. A structure according to Claim 57 wherein the at least one post includes bubbles therein.
63. A structure according to Claim 57 wherein the at least one post is less than one half micron wide.
64. A structure according to Claim 58 wherein the at least one post includes a jagged end.
65. A structure according to Claim 58 wherein the at least one post is less than one half micron wide.
66. A structure according to Claim 54 wherein the posts include tips on the ends thereof.
67. A method of fabricating a gallium nitride semiconductor layer comprising the steps of:
forming a plurality of posts on a substrate, the posts defining a plurality of sidewalls, the posts having a thermal expansion coefficient mismatch between the substrate and a later formed gallium nitride semiconductor layer on the posts;
growing a gallium nitride layer from the sidewalls of the posts at elevated temperature, until the gallium nitride layer coalesces to produce a gallium nitride semiconductor layer; and reducing the elevated temperature so as to crack at least some of the posts due to the thermal expansion coefficient mismatch between the substrate and the gallium nitride semiconductor layer.
forming a plurality of posts on a substrate, the posts defining a plurality of sidewalls, the posts having a thermal expansion coefficient mismatch between the substrate and a later formed gallium nitride semiconductor layer on the posts;
growing a gallium nitride layer from the sidewalls of the posts at elevated temperature, until the gallium nitride layer coalesces to produce a gallium nitride semiconductor layer; and reducing the elevated temperature so as to crack at least some of the posts due to the thermal expansion coefficient mismatch between the substrate and the gallium nitride semiconductor layer.
68. A method according to Claim 67:
wherein the growing step comprises the step of pendeoepitaxially growing, at elevated temperature, a gallium nitride layer from the sidewalls of the posts, that is cantilevered from the substrate, until the cantilevered gallium nitride layer coalesces to produce a gallium nitride semiconductor layer; and wherein the reducing step comprises the step of reducing the elevated temperature so as to crack at least some of the posts between the substrate and the cantilevered gallium nitride layer due to the thermal expansion coefficient mismatch between the substrate and the gallium nitride semiconductor layer.
wherein the growing step comprises the step of pendeoepitaxially growing, at elevated temperature, a gallium nitride layer from the sidewalls of the posts, that is cantilevered from the substrate, until the cantilevered gallium nitride layer coalesces to produce a gallium nitride semiconductor layer; and wherein the reducing step comprises the step of reducing the elevated temperature so as to crack at least some of the posts between the substrate and the cantilevered gallium nitride layer due to the thermal expansion coefficient mismatch between the substrate and the gallium nitride semiconductor layer.
69. A method according to Claim 67 wherein the forming step comprises the step of forming an array of posts in spaced apart relation on the substrate.
70. A method according to Claim 67 wherein the forming step comprises the step of forming a plurality of posts having a height-to-width ratio in excess of 0.5 on the substrate.
71. A method according to Claim 67 wherein the forming step comprises the step of forming a post weakening region in the posts, adjacent the substrate.
72. A method according to Claim 71 wherein the step of forming a post weakening region comprises the steps of:
forming a buried region in the substrate; and selectively etching the substrate to define the plurality of posts including the post weakening regions that comprise the buried region, adjacent the substrate.
forming a buried region in the substrate; and selectively etching the substrate to define the plurality of posts including the post weakening regions that comprise the buried region, adjacent the substrate.
73. A method according to Claim 72 wherein the step of forming a buried region comprises the step of implanting ions beneath the substrate surface.
74. A method according to Claim 73 wherein the ions are hydrogen ions.
75. A method according to Claim 67 wherein the step of reducing comprises the step of reducing the elevated temperature so as to shear at least some of the posts due to the thermal expansion coefficient mismatch between the substrate and the gallium nitride semiconductor layer.
76. A method according to Claim 67 wherein the step of reducing comprises the step of reducing the elevated temperature so as to crack all of the posts due to the thermal expansion coefficient mismatch between the substrate and the gallium nitride semiconductor layer.
77. A method according to Claim 67 wherein the reducing step is followed by the step of separating the gallium nitride semiconductor layer from the substrate at the cracked posts to produce a freestanding gallium nitride semiconductor layer.
78. A method according to Claim 77 wherein the separating step is followed by the step of epitaxially growing a gallium nitride layer on the freestanding gallium nitride semiconductor layer.
79. A method according to Claim 67 wherein the following step is performed between the steps of growing and reducing:
epitaxially growing a gallium nitride layer on the gallium nitride semiconductor layer.
epitaxially growing a gallium nitride layer on the gallium nitride semiconductor layer.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/468,995 US6380108B1 (en) | 1999-12-21 | 1999-12-21 | Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby |
| US09/468,995 | 1999-12-21 | ||
| PCT/US2000/042818 WO2001047002A2 (en) | 1999-12-21 | 2000-12-13 | Pendeoepitaxial gallium nitride layers grown on weak posts |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2395783A1 true CA2395783A1 (en) | 2001-06-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002395783A Abandoned CA2395783A1 (en) | 1999-12-21 | 2000-12-13 | Pendeoepitaxial gallium nitride layers grown on weak posts |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6380108B1 (en) |
| JP (2) | JP4845314B2 (en) |
| AU (1) | AU4524701A (en) |
| CA (1) | CA2395783A1 (en) |
| WO (1) | WO2001047002A2 (en) |
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| US6380108B1 (en) | 2002-04-30 |
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| JP2011157272A (en) | 2011-08-18 |
| WO2001047002A3 (en) | 2002-02-07 |
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