CA2396951A1 - Dispositif de photodetection a microresonateur metal-semiconducteur vertical et procede de fabrication de ce dispositif - Google Patents

Dispositif de photodetection a microresonateur metal-semiconducteur vertical et procede de fabrication de ce dispositif Download PDF

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Publication number
CA2396951A1
CA2396951A1 CA002396951A CA2396951A CA2396951A1 CA 2396951 A1 CA2396951 A1 CA 2396951A1 CA 002396951 A CA002396951 A CA 002396951A CA 2396951 A CA2396951 A CA 2396951A CA 2396951 A1 CA2396951 A1 CA 2396951A1
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CA
Canada
Prior art keywords
light
electrodes
vertical metal
incident light
production method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002396951A
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English (en)
Other versions
CA2396951C (fr
Inventor
Fabrice Pardo
Stephane Collin
Roland Teissier
Jean-Luc Pelouard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Fabrice Pardo
Stephane Collin
Roland Teissier
Jean-Luc Pelouard
Centre National De La Recherche Scientifique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fabrice Pardo, Stephane Collin, Roland Teissier, Jean-Luc Pelouard, Centre National De La Recherche Scientifique filed Critical Fabrice Pardo
Publication of CA2396951A1 publication Critical patent/CA2396951A1/fr
Application granted granted Critical
Publication of CA2396951C publication Critical patent/CA2396951C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
    • H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type

Abstract

Selon l'invention, pour détecter une lumière incidente, on forme, sur une couche isolante (2) n'absorbant pas cette lumière, au moins un élément comprenant un matériau semiconducteur (6) et au moins deux électrodes (4) encadrant l'élément, l'ensemble élément - électrodes étant apte à absorber cette lumière et dimensionné pour augmenter l'intensité lumineuse par rappor t à la lumière incidente, en faisant résonner en particulier un mode de plasmo n de surface entre les interfaces de l'ensemble avec la couche et le milieu de propagation de la lumière incidente, la résonance de ce mode ayant lieu à l'interface entre l'élément et au moins l'une des électrodes, ce mode étant excité par la composante du champ magnétique de la lumière, parallèle aux électrodes. Application aux télécommunications optiques.
CA002396951A 2000-01-14 2001-01-12 Dispositif de photodetection a microresonateur metal-semiconducteur vertical et procede de fabrication de ce dispositif Expired - Fee Related CA2396951C (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0000468A FR2803950B1 (fr) 2000-01-14 2000-01-14 Dispositif de photodetection a microresonateur metal- semiconducteur vertical et procede de fabrication de ce dispositif
FR00/00468 2000-01-14
PCT/FR2001/000103 WO2001052329A1 (fr) 2000-01-14 2001-01-12 Dispositif de photodetection a microresonateur metal-semiconducteur vertical et procede de fabrication de ce dispositif

Publications (2)

Publication Number Publication Date
CA2396951A1 true CA2396951A1 (fr) 2001-07-19
CA2396951C CA2396951C (fr) 2008-05-06

Family

ID=8845925

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002396951A Expired - Fee Related CA2396951C (fr) 2000-01-14 2001-01-12 Dispositif de photodetection a microresonateur metal-semiconducteur vertical et procede de fabrication de ce dispositif

Country Status (9)

Country Link
US (1) US6713832B2 (fr)
EP (1) EP1247301B1 (fr)
JP (1) JP4694753B2 (fr)
AT (1) ATE390717T1 (fr)
AU (1) AU2001231887A1 (fr)
CA (1) CA2396951C (fr)
DE (1) DE60133365T2 (fr)
FR (1) FR2803950B1 (fr)
WO (1) WO2001052329A1 (fr)

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US7605835B2 (en) * 2006-02-28 2009-10-20 Virgin Islands Microsystems, Inc. Electro-photographic devices incorporating ultra-small resonant structures
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US7710040B2 (en) * 2006-05-05 2010-05-04 Virgin Islands Microsystems, Inc. Single layer construction for ultra small devices
US7741934B2 (en) * 2006-05-05 2010-06-22 Virgin Islands Microsystems, Inc. Coupling a signal through a window
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US20070272931A1 (en) * 2006-05-05 2007-11-29 Virgin Islands Microsystems, Inc. Methods, devices and systems producing illumination and effects
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US7723698B2 (en) 2006-05-05 2010-05-25 Virgin Islands Microsystems, Inc. Top metal layer shield for ultra-small resonant structures
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US7728702B2 (en) * 2006-05-05 2010-06-01 Virgin Islands Microsystems, Inc. Shielding of integrated circuit package with high-permeability magnetic material
US7656094B2 (en) 2006-05-05 2010-02-02 Virgin Islands Microsystems, Inc. Electron accelerator for ultra-small resonant structures
US7586167B2 (en) * 2006-05-05 2009-09-08 Virgin Islands Microsystems, Inc. Detecting plasmons using a metallurgical junction
US7718977B2 (en) 2006-05-05 2010-05-18 Virgin Island Microsystems, Inc. Stray charged particle removal device
US7728397B2 (en) 2006-05-05 2010-06-01 Virgin Islands Microsystems, Inc. Coupled nano-resonating energy emitting structures
US7986113B2 (en) * 2006-05-05 2011-07-26 Virgin Islands Microsystems, Inc. Selectable frequency light emitter
US7732786B2 (en) * 2006-05-05 2010-06-08 Virgin Islands Microsystems, Inc. Coupling energy in a plasmon wave to an electron beam
US8188431B2 (en) 2006-05-05 2012-05-29 Jonathan Gorrell Integration of vacuum microelectronic device with integrated circuit
JP4772585B2 (ja) * 2006-05-10 2011-09-14 浜松ホトニクス株式会社 光検出器
US7573045B2 (en) * 2006-05-15 2009-08-11 Virgin Islands Microsystems, Inc. Plasmon wave propagation devices and methods
US7679067B2 (en) * 2006-05-26 2010-03-16 Virgin Island Microsystems, Inc. Receiver array using shared electron beam
US7655934B2 (en) 2006-06-28 2010-02-02 Virgin Island Microsystems, Inc. Data on light bulb
US7560716B2 (en) * 2006-09-22 2009-07-14 Virgin Islands Microsystems, Inc. Free electron oscillator
US7659513B2 (en) * 2006-12-20 2010-02-09 Virgin Islands Microsystems, Inc. Low terahertz source and detector
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US8467637B2 (en) * 2007-05-01 2013-06-18 Nec Corporation Waveguide path coupling-type photodiode
JP5069497B2 (ja) * 2007-05-24 2012-11-07 富士フイルム株式会社 質量分析用デバイス及びそれを用いた質量分析装置
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TWI512963B (zh) * 2014-01-13 2015-12-11 Univ Nat Taiwan 光偵測器
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WO2024038897A1 (fr) * 2022-08-18 2024-02-22 国立大学法人東京大学 Élément, procédé de fabrication d'élément et registre de spins photoniques

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Also Published As

Publication number Publication date
FR2803950A1 (fr) 2001-07-20
JP2003520438A (ja) 2003-07-02
US6713832B2 (en) 2004-03-30
AU2001231887A1 (en) 2001-07-24
EP1247301A1 (fr) 2002-10-09
JP4694753B2 (ja) 2011-06-08
WO2001052329A1 (fr) 2001-07-19
CA2396951C (fr) 2008-05-06
DE60133365D1 (de) 2008-05-08
DE60133365T2 (de) 2009-04-16
FR2803950B1 (fr) 2002-03-01
US20030010979A1 (en) 2003-01-16
ATE390717T1 (de) 2008-04-15
EP1247301B1 (fr) 2008-03-26

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