CA2430451A1 - Mechanical deformation amount sensor - Google Patents
Mechanical deformation amount sensor Download PDFInfo
- Publication number
- CA2430451A1 CA2430451A1 CA002430451A CA2430451A CA2430451A1 CA 2430451 A1 CA2430451 A1 CA 2430451A1 CA 002430451 A CA002430451 A CA 002430451A CA 2430451 A CA2430451 A CA 2430451A CA 2430451 A1 CA2430451 A1 CA 2430451A1
- Authority
- CA
- Canada
- Prior art keywords
- carbon nanotube
- resistance element
- sensor
- deformation
- nanotube resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
- G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0118—Cantilevers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
- G01P2015/0828—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/953—Detector using nanostructure
- Y10S977/956—Of mechanical property
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Analytical Chemistry (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Composite Materials (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Micromachines (AREA)
Abstract
A mechanical deformation amount sensor includes a sensor structure which is formed by a semiconductor substrate or an insulating substrate. The sensor integrally includes a deformation portion deformable when a physical quantity to be detected is applied to the sensor structure. The sensor also includes a support portion for supporting the deformation portion, a carbon nanotube resistance element disposed on the deformation portion so as to be mechanically deformed in response to deformation of the deformation portion and a wiring pattern which is formed in a pattern on the sensor structure so as to be connected to the carbon nanotube resistance element. By applying a voltage to the carbon nanotube resistance element via the wiring pattern, a change of electrical conductivity of the carbon nanotube resistance element upon mechanical deformation of the carbon nanotube resistance element is transduced in an electrical signal.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002211654A JP3969228B2 (en) | 2002-07-19 | 2002-07-19 | Mechanical deformation detection sensor, acceleration sensor using the same, and pressure sensor |
JP2002-211654 | 2002-07-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2430451A1 true CA2430451A1 (en) | 2004-01-19 |
CA2430451C CA2430451C (en) | 2007-01-16 |
Family
ID=29997200
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002430451A Expired - Fee Related CA2430451C (en) | 2002-07-19 | 2003-05-29 | Mechanical deformation amount sensor |
Country Status (6)
Country | Link |
---|---|
US (1) | US6848320B2 (en) |
EP (2) | EP1790963B1 (en) |
JP (1) | JP3969228B2 (en) |
CN (1) | CN1238686C (en) |
CA (1) | CA2430451C (en) |
DE (2) | DE60317273T2 (en) |
Families Citing this family (87)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002058089A1 (en) * | 2001-01-19 | 2002-07-25 | Massachusetts Institute Of Technology | Bistable actuation techniques, mechanisms, and applications |
US6593666B1 (en) * | 2001-06-20 | 2003-07-15 | Ambient Systems, Inc. | Energy conversion systems using nanometer scale assemblies and methods for using same |
US7491428B2 (en) * | 2002-12-04 | 2009-02-17 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Controlled deposition and alignment of carbon nanotubes |
US7148579B2 (en) * | 2003-06-02 | 2006-12-12 | Ambient Systems, Inc. | Energy conversion systems utilizing parallel array of automatic switches and generators |
US7199498B2 (en) * | 2003-06-02 | 2007-04-03 | Ambient Systems, Inc. | Electrical assemblies using molecular-scale electrically conductive and mechanically flexible beams and methods for application of same |
US7095645B2 (en) * | 2003-06-02 | 2006-08-22 | Ambient Systems, Inc. | Nanoelectromechanical memory cells and data storage devices |
US20040238907A1 (en) * | 2003-06-02 | 2004-12-02 | Pinkerton Joseph F. | Nanoelectromechanical transistors and switch systems |
FR2857153B1 (en) * | 2003-07-01 | 2005-08-26 | Commissariat Energie Atomique | BISTABLE MICRO-SWITCH WITH LOW CONSUMPTION. |
US7211873B2 (en) * | 2003-09-24 | 2007-05-01 | Denso Corporation | Sensor device having thin membrane and method of manufacturing the same |
WO2006001834A2 (en) * | 2003-12-31 | 2006-01-05 | Pettit John W | Passive optical sensor using carbon nanotubes |
WO2005083409A1 (en) * | 2004-02-26 | 2005-09-09 | Nanonord A/S | A sensor for use in detection of a target substance in a sample |
US7353720B2 (en) * | 2004-07-09 | 2008-04-08 | Michelin Recherche Et Technique, S.A. | Bridge patch for electromechanical transducer elements in tire assemblies |
US7194912B2 (en) * | 2004-07-13 | 2007-03-27 | United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Carbon nanotube-based sensor and method for continually sensing changes in a structure |
EP1805869A2 (en) | 2004-07-19 | 2007-07-11 | Ambient Systems, Inc. | Nanometer-scale electrostatic and electromagnetic motors and generators |
US7247877B2 (en) * | 2004-08-20 | 2007-07-24 | International Business Machines Corporation | Integrated carbon nanotube sensors |
JP4569242B2 (en) * | 2004-09-22 | 2010-10-27 | パナソニック電工株式会社 | Physical quantity sensor |
JP2006118867A (en) * | 2004-10-19 | 2006-05-11 | Hitachi Kenki Fine Tech Co Ltd | Scanning probe microscope and measuring method using it |
WO2006053213A1 (en) * | 2004-11-09 | 2006-05-18 | University Of Florida Research Foundation, Inc. | Methods and articles incorporating local stress for performance improvement of strained semiconductor devices |
CN100427954C (en) * | 2005-02-07 | 2008-10-22 | 清华大学 | Microdiaphragm accelerating sensor with nanometer materials |
WO2006114832A1 (en) * | 2005-04-06 | 2006-11-02 | Murata Manufacturing Co., Ltd. | Acceleration sensor |
JP4492416B2 (en) * | 2005-04-07 | 2010-06-30 | パナソニック電工株式会社 | Physical quantity sensor |
JP4641217B2 (en) * | 2005-06-08 | 2011-03-02 | 株式会社豊田中央研究所 | Microphone and manufacturing method thereof |
AT501760B1 (en) * | 2005-06-14 | 2006-11-15 | Electrovac | ARRANGEMENT FOR PRESSURE MEASUREMENT |
US7278324B2 (en) * | 2005-06-15 | 2007-10-09 | United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Carbon nanotube-based sensor and method for detection of crack growth in a structure |
US20070048160A1 (en) * | 2005-07-19 | 2007-03-01 | Pinkerton Joseph F | Heat activated nanometer-scale pump |
US20070031318A1 (en) * | 2005-08-03 | 2007-02-08 | Jie Liu | Methods of chemically treating an electrically conductive layer having nanotubes therein with diazonium reagent |
US7337678B2 (en) * | 2005-12-09 | 2008-03-04 | General Electric Company | MEMS flow sensor |
EP2010868B1 (en) * | 2006-03-28 | 2017-01-18 | University of Southern California | Biomimetic tactile sensor |
US8181540B2 (en) * | 2006-03-28 | 2012-05-22 | University Of Southern California | Measurement of sliding friction-induced vibrations for biomimetic tactile sensing |
JP4595862B2 (en) * | 2006-03-28 | 2010-12-08 | パナソニック電工株式会社 | Capacitive sensor |
CN101467050B (en) * | 2006-06-08 | 2013-02-13 | 株式会社村田制作所 | Acceleration sensor |
EP2056087A4 (en) * | 2006-10-02 | 2011-11-30 | Panasonic Elec Works Co Ltd | Pressure sensor |
US7878988B2 (en) * | 2006-10-06 | 2011-02-01 | Stephen Thomas Bush | Method for measuring the strength of healing bone and related tissues |
JP5257681B2 (en) | 2007-02-15 | 2013-08-07 | 日本電気株式会社 | Carbon nanotube resistor and method for manufacturing semiconductor device |
KR100801497B1 (en) | 2007-03-13 | 2008-02-12 | 한양대학교 산학협력단 | Pressure sensor element having a carbon nanotube thin film network, fabrication method thereof, and sensor comprising the same |
US7437938B2 (en) | 2007-03-21 | 2008-10-21 | Rosemount Inc. | Sensor with composite diaphragm containing carbon nanotubes or semiconducting nanowires |
US8272278B2 (en) * | 2007-03-28 | 2012-09-25 | University Of Southern California | Enhancements to improve the function of a biomimetic tactile sensor |
WO2008124084A2 (en) * | 2007-04-03 | 2008-10-16 | Pinkerton Joseph F | Nanoelectromechanical systems and methods for making the same |
WO2009023334A2 (en) | 2007-05-18 | 2009-02-19 | University Of Southern California | Biomimetic tactile sensor for control of grip |
DE102007025812A1 (en) * | 2007-06-02 | 2008-12-04 | Wilhelm Karmann Gmbh | Rod assembly for Cabriolet vehicle, has overload safety device deformed by preset measure by exceeding predetermined load, and sensor for detecting deformation and for producing overload signal |
FR2917731B1 (en) * | 2007-06-25 | 2009-10-23 | Commissariat Energie Atomique | DEVICE RESONANT TO PIEZORESISTIVE DETECTION REALIZED IN SURFACE TECHNOLOGIES |
US8132468B2 (en) | 2008-05-29 | 2012-03-13 | Zoran Radivojevic | Flexural deformation sensing device and a user interface using the same |
US8264347B2 (en) * | 2008-06-24 | 2012-09-11 | Trelleborg Sealing Solutions Us, Inc. | Seal system in situ lifetime measurement |
EP2144054A1 (en) | 2008-07-08 | 2010-01-13 | ETH Zürich | Sensor and measurement method using one-dimensional nanostrustures |
KR101065280B1 (en) | 2008-11-24 | 2011-09-19 | 한국표준과학연구원 | Flexible device using carbon nanotube and method for manufacturing the same |
US8313443B2 (en) * | 2009-03-09 | 2012-11-20 | Tom Michael D | Tensiometer utilizing elastic conductors |
EP2475612A4 (en) * | 2009-09-11 | 2017-09-13 | Jp Laboratories, Inc. | Monitoring devices and processes based on transformation, destruction and conversion of nanostructures |
CN102087101B (en) * | 2009-12-04 | 2012-07-18 | 清华大学 | Device and method for measuring strain |
DE102010002274A1 (en) * | 2010-02-24 | 2011-08-25 | Robert Bosch GmbH, 70469 | Apparatus for measuring torsions, bends and the like, and corresponding production method |
KR101105220B1 (en) | 2010-03-12 | 2012-01-13 | 고려대학교 산학협력단 | Sensor system using nano-materials and manufacturing method of the same |
US8250927B2 (en) * | 2010-03-17 | 2012-08-28 | Indian Institute Of Science | Flexible, stretchable, and distributed strain sensors |
JP2012073163A (en) * | 2010-09-29 | 2012-04-12 | Seiko Epson Corp | Pressure sensor |
JP5436404B2 (en) * | 2010-12-17 | 2014-03-05 | 三菱電機株式会社 | Semiconductor pressure sensor and manufacturing method thereof |
DE102011005676A1 (en) * | 2011-03-17 | 2012-09-20 | Robert Bosch Gmbh | component |
JP2012196727A (en) * | 2011-03-18 | 2012-10-18 | Fujitsu Ltd | Mems element |
JP5843850B2 (en) * | 2011-04-21 | 2016-01-13 | 株式会社日立製作所 | Mechanical quantity measuring device, semiconductor device, peeling detection device and module |
JP5915103B2 (en) * | 2011-11-11 | 2016-05-11 | セイコーエプソン株式会社 | Physical quantity detector |
KR101299133B1 (en) | 2011-12-05 | 2013-08-22 | 한국과학기술연구원 | Pressure sensor having a nano structure and manufacturing method thereof |
US9511995B2 (en) | 2012-02-15 | 2016-12-06 | Massachusetts Institute Of Technology | Method and apparatus for building three-dimensional MEMS elements |
US9573802B2 (en) * | 2012-02-15 | 2017-02-21 | Massachusetts Institute Of Technology | Method and apparatus for building three-dimensional MEMS elements |
US9217755B2 (en) | 2012-02-15 | 2015-12-22 | Massachusetts Institute Of Technology | Method and apparatus for building three-dimensional MEMS elements |
US8797059B2 (en) | 2012-03-01 | 2014-08-05 | International Business Machines Corporation | Implementing carbon nanotube based sensors for cryptographic applications |
EP2839270B1 (en) * | 2012-03-26 | 2019-11-06 | Technion Research & Development Foundation Limited | A platform unit for combined sensing of pressure, temperature and humidity |
WO2014017169A1 (en) | 2012-07-26 | 2014-01-30 | 株式会社村田製作所 | Pressing force sensor |
US9164121B2 (en) | 2012-11-07 | 2015-10-20 | Empire Technology Development Llc | Motion sensing |
RU2517798C1 (en) * | 2012-12-03 | 2014-05-27 | Открытое акционерное общество "Научно-исследовательский институт физических измерений" | Strain gage pressure sensor based on thin-film nano- and microelectromechanical system |
WO2014098565A1 (en) * | 2012-12-21 | 2014-06-26 | Mimos Berhad | Dual range pressure sensor |
US9809448B2 (en) | 2013-03-13 | 2017-11-07 | Invensense, Inc. | Systems and apparatus having MEMS acoustic sensors and other MEMS sensors and methods of fabrication of the same |
US8692340B1 (en) * | 2013-03-13 | 2014-04-08 | Invensense, Inc. | MEMS acoustic sensor with integrated back cavity |
US9625333B2 (en) | 2013-03-15 | 2017-04-18 | President And Fellows Of Harvard College | Tactile sensor |
RU2523754C1 (en) * | 2013-04-04 | 2014-07-20 | Федеральное государственное унитарное предприятие "Всероссийский научно-исследовательский институт автоматики им. Н.Л. Духова" (ФГУП "ВНИИА") | Pressure transducer |
US9546922B2 (en) | 2013-08-09 | 2017-01-17 | Continental Automotive Systems, Inc. | Absolute pressure sensor with improved cap bonding boundary |
RU2537470C1 (en) * | 2013-08-15 | 2015-01-10 | Открытое акционерное общество "Научно-исследовательский институт физических измерений" | Strain gage pressure sensor based on thin-film nano- and microelectromechanical system |
RU2545314C1 (en) * | 2013-09-24 | 2015-03-27 | Открытое акционерное общество "Научно-исследовательский институт физических измерений" | Method to manufacture strain gauge pressure sensor based on thin-film nano- and microelectromechanical system |
US9435821B1 (en) * | 2013-12-12 | 2016-09-06 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Single-axis accelerometer |
RU2547886C1 (en) * | 2013-12-30 | 2015-04-10 | Открытое акционерное общество "Научно-исследовательский институт физических измерений" | Strain gage pressure sensor based on thin-film nano- and microelectromechanical system |
CN103792036B (en) * | 2014-03-05 | 2016-01-20 | 中国电子科技集团公司第三十八研究所 | MEMS chip that air pressure is mutually integrated with acceleration transducer and preparation method thereof |
WO2015153938A1 (en) * | 2014-04-04 | 2015-10-08 | Robert Bosch Gmbh | Membrane-based sensor and method for robust manufacture of a membrane-based sensor |
US20170265788A1 (en) * | 2014-05-12 | 2017-09-21 | President And Fellows Of Harvard College | Systems and methods for making and using sensors, probes, and other devices |
US10585456B2 (en) | 2015-08-26 | 2020-03-10 | Lg Display Co., Ltd. | Flexible display device having bending sensing device |
US20170057810A1 (en) * | 2015-09-01 | 2017-03-02 | Apple Inc. | Strain Reduction and Sensing on Package Substrates |
JP6410105B2 (en) * | 2015-09-18 | 2018-10-24 | Smc株式会社 | Pressure sensor and manufacturing method thereof |
DE102016204557A1 (en) * | 2016-03-18 | 2017-09-21 | Zf Friedrichshafen Ag | Sensor device, measuring device, motor vehicle and method for detecting a current deformation of a component |
JP6794293B2 (en) * | 2017-02-24 | 2020-12-02 | 日本電産コパル電子株式会社 | A strain-causing body and a force sensor equipped with the strain-causing body |
CN107941139A (en) * | 2017-12-06 | 2018-04-20 | 中国建筑股份有限公司 | Scaffolding steel pipe bends quantitatively measuring device and its measuring method |
JP2020016619A (en) * | 2018-07-27 | 2020-01-30 | アズビル株式会社 | Pressure sensor |
EP4047337A4 (en) * | 2019-10-17 | 2023-11-22 | TDK Corporation | Measuring device and measuring system |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62268166A (en) * | 1986-05-15 | 1987-11-20 | Komatsu Ltd | Thin-film pressure sensor |
JPH0691265B2 (en) * | 1986-08-01 | 1994-11-14 | 株式会社日立製作所 | Semiconductor pressure sensor |
US4800759A (en) * | 1987-08-31 | 1989-01-31 | Yokogawa Electric Corporation | Semiconductor pressure converter |
JP2595829B2 (en) * | 1991-04-22 | 1997-04-02 | 株式会社日立製作所 | Differential pressure sensor and multifunction differential pressure sensor |
JP3399660B2 (en) * | 1994-10-06 | 2003-04-21 | 株式会社東海理化電機製作所 | Manufacturing method of surface type acceleration sensor |
JPH08236784A (en) * | 1995-02-23 | 1996-09-13 | Tokai Rika Co Ltd | Acceleration sensor and manufacture thereof |
US5759870A (en) * | 1995-08-28 | 1998-06-02 | Bei Electronics, Inc. | Method of making a surface micro-machined silicon pressure sensor |
JP3489309B2 (en) * | 1995-12-27 | 2004-01-19 | 株式会社デンソー | Method for manufacturing semiconductor dynamic quantity sensor and anisotropic etching mask |
JPH10282130A (en) * | 1997-04-01 | 1998-10-23 | Canon Inc | Probe and scanning probe microscope using it |
US6276214B1 (en) * | 1997-12-26 | 2001-08-21 | Toyoaki Kimura | Strain sensor functioned with conductive particle-polymer composites |
JP3418561B2 (en) | 1997-12-26 | 2003-06-23 | 豊明 木村 | Conductive particle-polymer strain sensor |
US6150681A (en) * | 1998-07-24 | 2000-11-21 | Silicon Microstructures, Inc. | Monolithic flow sensor and pressure sensor |
IL141890A0 (en) * | 1998-09-07 | 2002-03-10 | Quantum Prec Instr Pty Ltd | Measurements using tunnelling current between elongate conductors |
US6146227A (en) * | 1998-09-28 | 2000-11-14 | Xidex Corporation | Method for manufacturing carbon nanotubes as functional elements of MEMS devices |
JP2000121469A (en) * | 1998-10-16 | 2000-04-28 | Mitsubishi Electric Corp | Pressure sensor |
AU782000B2 (en) * | 1999-07-02 | 2005-06-23 | President And Fellows Of Harvard College | Nanoscopic wire-based devices, arrays, and methods of their manufacture |
US6286226B1 (en) * | 1999-09-24 | 2001-09-11 | Agere Systems Guardian Corp. | Tactile sensor comprising nanowires and method for making the same |
US6550337B1 (en) * | 2000-01-19 | 2003-04-22 | Measurement Specialties, Inc. | Isolation technique for pressure sensing structure |
JP3892198B2 (en) * | 2000-02-17 | 2007-03-14 | エスアイアイ・ナノテクノロジー株式会社 | Microprobe and sample surface measuring device |
WO2002003482A1 (en) * | 2000-07-04 | 2002-01-10 | Infineon Technologies Ag | Field effect transistor |
DE10034390C2 (en) * | 2000-07-14 | 2003-06-26 | Eads Deutschland Gmbh | Pressure sensor and method for its production, and internal combustion engine with pressure sensor |
US7301199B2 (en) * | 2000-08-22 | 2007-11-27 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
EP1182784A3 (en) * | 2000-08-23 | 2004-06-30 | Infineon Technologies AG | Resistor string for providing electric reference values and analogue-to-digital converter |
US6743408B2 (en) * | 2000-09-29 | 2004-06-01 | President And Fellows Of Harvard College | Direct growth of nanotubes, and their use in nanotweezers |
US6559550B2 (en) * | 2000-11-03 | 2003-05-06 | Lockheed Martin Corporation | Nanoscale piezoelectric generation system using carbon nanotube |
JP4697829B2 (en) * | 2001-03-15 | 2011-06-08 | ポリマテック株式会社 | Carbon nanotube composite molded body and method for producing the same |
US20020160111A1 (en) * | 2001-04-25 | 2002-10-31 | Yi Sun | Method for fabrication of field emission devices using carbon nanotube film as a cathode |
KR100418881B1 (en) * | 2001-05-23 | 2004-02-19 | 엘지전자 주식회사 | cantilever for high sensitivity piezoresistive of Atomic Force Microscope type |
JP3764853B2 (en) * | 2001-05-28 | 2006-04-12 | 喜萬 中山 | Nanomaterial mass measurement method and apparatus |
KR100421218B1 (en) * | 2001-06-04 | 2004-03-02 | 삼성전자주식회사 | Apparatus of electron emission lithography by using selectively grown carbon nanotube and lithography method thereof |
US7125502B2 (en) * | 2001-07-06 | 2006-10-24 | William Marsh Rice University | Fibers of aligned single-wall carbon nanotubes and process for making the same |
US6515346B1 (en) * | 2002-01-02 | 2003-02-04 | Zoltan A. Kemeny | Microbar and method of its making |
US7186380B2 (en) * | 2002-07-01 | 2007-03-06 | Hewlett-Packard Development Company, L.P. | Transistor and sensors made from molecular materials with electric dipoles |
-
2002
- 2002-07-19 JP JP2002211654A patent/JP3969228B2/en not_active Expired - Fee Related
-
2003
- 2003-05-29 US US10/446,789 patent/US6848320B2/en not_active Expired - Fee Related
- 2003-05-29 CA CA002430451A patent/CA2430451C/en not_active Expired - Fee Related
- 2003-05-30 DE DE60317273T patent/DE60317273T2/en not_active Expired - Lifetime
- 2003-05-30 DE DE60330609T patent/DE60330609D1/en not_active Expired - Lifetime
- 2003-05-30 EP EP07104218A patent/EP1790963B1/en not_active Expired - Fee Related
- 2003-05-30 CN CNB031382754A patent/CN1238686C/en not_active Expired - Fee Related
- 2003-05-30 EP EP03012387A patent/EP1384612B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1790963B1 (en) | 2009-12-16 |
EP1790963A3 (en) | 2007-07-18 |
DE60317273T2 (en) | 2008-08-28 |
DE60330609D1 (en) | 2010-01-28 |
CA2430451C (en) | 2007-01-16 |
EP1384612B1 (en) | 2007-11-07 |
US20040012062A1 (en) | 2004-01-22 |
JP3969228B2 (en) | 2007-09-05 |
DE60317273D1 (en) | 2007-12-20 |
JP2004053424A (en) | 2004-02-19 |
CN1238686C (en) | 2006-01-25 |
US6848320B2 (en) | 2005-02-01 |
CN1469100A (en) | 2004-01-21 |
EP1790963A2 (en) | 2007-05-30 |
EP1384612A3 (en) | 2006-01-18 |
EP1384612A2 (en) | 2004-01-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA2430451A1 (en) | Mechanical deformation amount sensor | |
WO2006007078A8 (en) | Force sensing resistor with calibration element | |
TW200725880A (en) | Semiconductor piezoresistive sensor and operation method thereof | |
WO2007002266A3 (en) | Structures with integral life-sensing capability | |
WO2003088135A3 (en) | Touch sensitive display device | |
WO2007057906A3 (en) | Polymer nanosensor device | |
CA2419678A1 (en) | Image acquisition apparatus | |
WO2004001662A3 (en) | Touch sensor | |
WO2002063261A3 (en) | Electronic pressure sensitive transducer apparatus and method for manufacturing same | |
WO2005089465A3 (en) | Electromechanical three-trace junction devices | |
ATE336744T1 (en) | ELECTRICAL CAPACITY SENSOR | |
MY122959A (en) | Stacked microelectronic packages | |
WO2001099035A3 (en) | Sensor unit, especially for fingerprint sensors | |
WO2007131796A3 (en) | Micromechanical actuators consisting of semiconductor compounds based on nitrides of main group iii elements | |
DE50002687D1 (en) | TACTILE SENSOR WITH PRESSURE-DEPENDENT CONTACT RESISTANCE BETWEEN TWO CONDUCTIVE WORKPIECES | |
AU7627801A (en) | Piezoelectric sensor | |
EP1657553A3 (en) | Method of manufacturing an external force detection sensor | |
WO2005052783A3 (en) | Touch sensor with conductive polymer switches | |
JP2003188882A5 (en) | ||
WO2004072334A3 (en) | Nanofabric articles and methods of making the same | |
US20150370398A1 (en) | Mechanical Force Redistribution Sensor Array Embedded in a Single Support Layer | |
EP2003707A4 (en) | Piezoelectric actuator | |
WO2002048664A1 (en) | Transparent face temperature sensor and transparent face temperature controller | |
US20070030111A1 (en) | Humidity sensor | |
WO2006040781A3 (en) | Sensor for measuring phisical quantities based on the detection of the variation of an electrical parameter, and method for its fabrication |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request | ||
MKLA | Lapsed |
Effective date: 20140529 |