CA2535634A1 - Nanotube-based switching elements with multiple controls and circuits made from same - Google Patents

Nanotube-based switching elements with multiple controls and circuits made from same Download PDF

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Publication number
CA2535634A1
CA2535634A1 CA002535634A CA2535634A CA2535634A1 CA 2535634 A1 CA2535634 A1 CA 2535634A1 CA 002535634 A CA002535634 A CA 002535634A CA 2535634 A CA2535634 A CA 2535634A CA 2535634 A1 CA2535634 A1 CA 2535634A1
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Prior art keywords
nanotube
channel element
output node
electrode
switching element
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CA002535634A
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French (fr)
Inventor
Claude L. Bertin
Thomas Rueckes
Brent M. Segal
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Nantero Inc
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Nantero, Inc
Claude L. Bertin
Thomas Rueckes
Brent M. Segal
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Publication of CA2535634A1 publication Critical patent/CA2535634A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0094—Switches making use of nanoelectromechanical systems [NEMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/80—Interconnections, e.g. terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/17—Memory cell being a nanowire transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/02—Contacts characterised by the material thereof
    • H01H1/021—Composite material
    • H01H1/027—Composite material containing carbon particles or fibres
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/701—Integrated with dissimilar structures on a common substrate
    • Y10S977/708—Integrated with dissimilar structures on a common substrate with distinct switching device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y10S977/938—Field effect transistors, FETS, with nanowire- or nanotube-channel region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/94—Specified use of nanostructure for electronic or optoelectronic application in a logic circuit
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure

Abstract

Nanotube-based switching elements with multiple controls and circuits made from such. A switching element includes an input node, an output node, and a nanotube channel element having at least one electrically conductive nanotube.
A control structure is disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said input node and said output node. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. The control structure includes a control electrode and a release electrode, disposed on opposite sides of the nanotube channel element.
The control and release may be used to form a differential input, or if the device is constructed appropriately to operate the circuit in a non-volatile manner. The switching elements may be arranged into logic circuits and latches having differential inputs and/or non-volatile behavior depending on the construction.

Description

Nanotube-Based Switching Elements with Multiple Controls and Circuits Made from Same Cross-Reference to Related Applications [0001] This application claims priority under 35 U.S.C. ~ 119(e) to U.S.
Provisional Pat. Apl., Ser. No. 60/494,889, filed on August 13, 2003, entitled Narcoelectromecha~cical NafZOtube-Based Logic, which is incorporated herein by reference in its entirety. This application also claims priority under 35 U.S.C. ~ 119(e) to U.S. Provisional Pat. Apl., Ser. No. 60/561,330, filed on April 12, 2004, entitled Non-volatile CNT Dual-Rail Differential Logic, which is incorporated herein by reference in its entirety.
Background 1. Technical Field [0002] The present application generally relates to nanotube switching circuits and in particular to nanotube switching circuits that use nanotubes to form a conductive channel of the switch and that may be interconnected into larger circuits, such as Boolean logic circuits.
2. Discussion of Related Art [0003] Digital logic circuits are used in personal computers, portable electronic devices such as personal organizers and calculators, electronic entertainment devices, and in control circuits for appliances, telephone switching systems, automobiles, aircraft and other items of manufacture. Early digital logic was constructed out of discrete switching elements composed of individual bipolar transistors. With the invention of the bipolar integrated circuit, large numbers of individual switching elements could be combined on a single silicon substrate to create complete digital logic circuits such as inverters, NAND gates, NOR gates, flip-flops, adders, etc. However, the density of bipolar digital integrated circuits is limited by their high power consumption and the ability of packaging technology to dissipate the heat produced while the circuits are operating. The availability of metal oxide semiconductor ("MOS") integrated circuits using field effect transistor ("FET") switching elements significantly reduces the power consumption of digital logic and enables the construction of the high density, complex digital circuits used in current technology. The density and operating speed of MOS
digital circuits are still limited by the need to dissipate the heat produced when the device is operating.
[0004] Digital logic integrated circuits constructed from bipolar or MOS
devices do not function correctly under conditions of high heat or extreme environments.
Current digital integrated circuits are normally designed to operate at temperatures less than 100 degrees centigrade and few operate at temperatures over 200 degrees centigrade. In conventional integrated circuits, the leakage current of the individual switching elements in.,the "off ' state increases rapidly with temperature. As leakage current increases, the operating temperature of the device rises, the power consumed by the circuit increases, and the difficulty of discriminating the off state from the on state reduces circuit reliability. Conventional digital logic circuits also short internally when subjected to certain extreme environments because electrical currents are generated inside the semiconductor material. It is possible to manufacture integrated circuits with special devices and isolation techniques so that they remain operational when exposed to such environments, but the high cost of these devices limits their availability and practicality. In addition, such digital circuits exhibit timing differences from their normal counterparts, requiring additional design verification to add protection to an existing design.
[0005] Integrated circuits constructed from either bipolar or FET switching elements are volatile. They only maintain their internal logical state while power is applied to the device. When power is removed, the internal state is lost unless some type of non-volatile memory circuit, such as EEPROM (electrically erasable programmable read-only memory), is added internal or external to the device to maintain the logical state. Even if non-volatile memory is utilized to maintain the logical state, additional circuitry is necessary to transfer the digital logic state to the memory before power is lost, and to restore the state of the individual logic circuits when power is restored to the device. Alternative solutions to avoid losing information in volatile digital circuits, such as battery bacl~up, also add cost and complexity to digital designs.
[0006] Important characteristics for logic circuits in an electronic device are low cost, high density, low power, and high speed. Conventional logic solutions are limited to silicon substrates, but logic circuits built on other substrates would allow logic devices to be integrated directly into many manufactured products in a single step, further reducing cost.
[0007] Devices have been proposed which use nanoscopic wires, such as single-walled carbon nanotubes, to form crossbar junctions to serve as memory cells.
See 8, Nanoscopic Wire-Based Devices, Arrays, and Methods of Their Manufacture; and Thomas Rueckes et al., "Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular Computing," Science, vol. 289, pp. 94-97, 7 July, 2000.) Hereinafter these devices are called nanotube wire crossbar memories (NTWCMs). Under these proposals, individual single-walled nanotube wires suspended over other wires define memory cells. Electrical signals are written to one or both wires to cause them to physically attract or repel relative to one another. Each physical state (i.e., attracted or repelled wires) corresponds to an electrical state.
Repelled wires are an open circuit junction. Attracted wires are a closed state forming a rectified junction. When electrical power is removed from the junction, the wires retain their physical (and thus electrical) state thereby forming a non-volatile memory cell.
[0008] U.S. Patent Publication No. 2003-0021966 discloses, among other things, electromechanical circuits, such as memory cells, in which circuits include a structure having electrically conductive traces and supports extending from a surface of a substrate. Nanotube ribbons that can electromeehanically deform, or switch are suspended by the supports that cross the electrically conductive traces. Each ribbon comprises one or more nanotubes. The ribbons are typically formed from selectively removing material from a layer or matted fabric of nanotubes.
[0009] For example, as disclosed in U.S. Patent Publication No. 2003-0021966, a nanofabric may be patterned into ribbons, and the ribbons can be used as a component to create non-volatile electromechanical memory cells. The ribbon is electromechanically-deflectable in response to electrical stimulus of control traces andlor the ribbon. The deflected, physical state of the ribbon may be made to represent a corresponding information state. The deflected, physical state has non-volatile properties, meaning the ribbon retains its physical (and therefore informational) state even if power to the memory cell is removed. As explained in U.S. Patent Publication No. 2003-0124325, three-trace architectures rnay be used for electromechanical memory cells, in which the two of the traces are electrodes to control the deflection of the ribbon.
[0010] The use of an electromechanical bi-stable device for digital information storage has also been suggested (c.f. US4979149: Non-volatile memory device including a micro-mechanical storage element).
[0011] The creation and operation of bi-stable, nano-electro-mechanical switches based on carbon nanotubes (including mono-layers constructed thereof) and metal electrodes has been detailed in a previous patent application of Nantero, Inc.
(U.S.
Patent Nos. 6574130, 6643165, 6706402; U.S. Patent Apl. Ser. Nos. 09/915093, 10/033323, 10/033032, 10/128117, 10/341005, 10/341055, 10/341054, 10/341130, 10/776059, and 10/776572, the contents of which are hereby incorporated by reference in their entireties).
Su~amary [0012] The present invention provides nanotube-based switching elements with multiple controls and circuits made from such.
[0013] Under one aspect of the invention, a switching element includes an input node, an output node, and a nanotube channel element having at least one electrically conductive nanotube. A control structure is disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said input node and said output node. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node.
[0014] Under another aspect of the invention, the control structure includes a control electrode and a release electrode, disposed on opposite sides of the nanotube channel element.
[0015] Under another aspect of the invention, channel formation is a non-volatile state.
[0016] Under another aspect of the invention, the control electrode and said release electrode are arranged in relation to the nanotube channel element to form and unform said conductive channel by causing electromechanical deflection of said nanotube channel element.
[0017] Under another aspect of the invention, the nanotube channel element includes an isolation structure having two sets of electrodes disposed on opposite sides of the control structure, each set of electrodes including electrodes disposed on opposite side of the nanotube channel element.
[0018] Under another aspect of the invention, the two sets of electrodes are symmetrically disposed in relation to control structure.
[0019] Under another aspect of the invention, the nanotube channel element is in electrical communication with the input node and is positioned in spaced and crossed relation relative to the control electrode and the release node and wherein deflection of said nanotube channel element is in response to electrostatic forces resulting from signals on the input node, the control electrode and the release node.
[0020] Under another aspect of the invention, deflection of the nanotube channel element is in response to a differential signal relationship applied to the control electrode [0021] Under another aspect of the invention, a Boolean logic circuit includes at least one set of differential input terminals and an output terminal and a network of nanotube switching elements electrically disposed between said at least one set of differential input terminals and said output terminal. The network of nanotube switching elements effectuates a Boolean function transformation of Boolean signals on said at least one set of differential input terminals.
[0022] Under another aspect of the invention, the network of nanotube switching elements effectuates a Boolean NOT function of signals on the at least one set of differential input terminals.
[0023] Under another aspect of the invention, the network of nanotube switching elements effectuates a Boolean NOR function of signals on at least first and second sets of differential input terminals.
[0024] Under another aspect of the invention, a Boolean logic circuit includes at least one input terminal and an output terminal and a network of nanotube switching elements electrically disposed between said at least one input terminal and said output terminal. The network of nanotube switching elements effectuates a Boolean function transformation of Boolean signals on said at least one input terminal and at least one of said nanotube switching elements being capable of non-volatilely retaining informational state.
[0025] Under another aspect of the invention, the at least one nanotube switching elements is capable of non-volatilely retaining informational state includes a nanotube channel element having at least one electrically conductive nanotube and a control structure disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between an input node of the at least one switching element and an output node of the at least one switching element.
[0026] Under another aspect of the invention, a latch circuit includes at least one input terminal and an output terminal, and a first and a second inverter circuit. Each inverter circuit includes a nanotube switching element having an input node, an output node, a nanotube channel element having at least one electrically conductive nanotube, a control electrode disposed in relation to the nanotube channel element to controllably form an electrically conductive channel to the output node, and a release electrode disposed in relation to the nanotube channel element to controllably unform the electrically conductive channel to the output node. The output node of the first inverter circuit is coupled to the control electrode of the second inverter circuit, and the output node of the second inverter circuit is coupled to the control electrode of the first inverter circuit.
[0027] Under another aspect of the invention, each nanotube channel element maintains state in the absence of signals on the nanotube element, the control electrode and the release electrode.
Brief Descriptiofa of the Drawiyigs [0028] In the Drawing, Figures lA -1D illustrate cross-sectional views of a na.notube switching element of certain embodiments in two different states and include a plan view of such element;
Figures 2A-3C show a schematic representation of a nanotube switching element;
Figure 4 shows a schematic representation of an exemplary dual-rail input, dual-rail output inverter circuit constructed from nanotube switching elements;
Figure 5 shows a schematic representation of an exemplary dual-rail flip-flop circuit constructed from nanotube switching elements;
Figures 6A-B show a schematic representation of the use of an exemplary nanotube static ram cell and a dual-rail flip-flop circuit to construct a non-volatile ram cell;
Figure 7 shows a schematic representation a dual rail nanotube-based NOR
circuit; and Figures 8Aand 8B shows an exemplary schematic representation of a volatile 4-terminal nanotube switching device operated as a 3-terminal device in a latch circuit.

Detailed Description [0029] Preferred embodiments of the invention provide switching elements in which a nanotube-based channel may be controllably formed and unformed, so that a signal may be transferred from a signal node to an output node. The switching element includes multiple control electrodes to control the formation and unformation of the channel, to provide a dual-rail capability, and to be used in novel ways. The transferred signal may be a varying signal or a reference signal, depending on the manner in which the switching element is utilized and arranged. Preferred embodiments provide an isolation structure so that such signal transfer and the switching element's operation is substantially invariant to the output state.
For example, the output node may float and/or be tied to other electrical components and the circuit will operate in a predictable switch-like manner. Consequently, the switching elements may be formed into larger circuits, such as Boolean logic circuits.
Under some embodiments, the switching elements are used as complimentary circuitry. Under some embodiments the switch maintains its state in the absence of power providing non-volatile logic. Under some embodiments the switching elements are used to form differential (dual-rail) logic.
[0030] Figure 1A is a cross sectional view of a preferred nanotube switching element 100. Nanotube switching element includes a lower portion having an insulating layer 117, control electrode 111, output electrodes 113c,d.
Nanotube switching element further includes an upper portion having release electrode 112, output electrodes 113a,b, and signal electrodes 114a,b. A nanotube channel element 115 is positioned between and held by the upper and lower portions.
[0031] Release electrode 112 is made of conductive material and is separated from nanotube channel element 115 by an insulating material 119. The channel element 115 is separated. from the facing surface of insulator 119 by a gap height 6102.
[0032] Output electrodes 113a,b are made of conductive material and are separated from nanotube channel element 115 by insulating material 119.
[0033] Output electrodes 113c,d are likewise made of conductive material and are separated from nanotube channel element 115 by a gap height 6103. Notice that the output electrodes 113c,d are not covered by insulator.
[0034] Control electrode 111 is made of conductive material and is separated from nanotube channel element 115 by an insulating layer (or film) 118. The channel element 115 is separated from the facing surface of insulator 118 by a gap height 6104.
[0035] Signal electrodes 114a,b each contact the nanotube channel element 115 and can therefore supply whatever signal is on the signal electrode to the channel element 115. This signal may be a fixed reference signal (e.g., Vdd or Ground) or varying (e.g., a Boolean discrete value signal that can change). Only one of the electrodes 114a,b need be connected, but both may be used to reduce effective resistance.
[0036] Nanotube channel element 115 is a lithographically-defined article made from a porous fabric of nanotubes (more below). It is electrically connected to signal electrodes 114a,b. The electrodes 114a,b and support 116 pinch or hold the channel element 115 at either end, and it is suspended in the middle in spaced relation to the output electrodes 113a-d and the control electrode 111 and release electrode 112.
The spaced relationship is. defined by the gap heights 6102-6104 identified above.
For certain embodiments, the length of the suspended portion of channel element 115 is about 300 to 350 nm.
[0037] Under certain embodiments the gaps 6103, 6104, 6102 are in the range of 30 nm. The dielectric on terminals 112, 111, and 113a and 113b are in the range of 5 - 30 nm, for example. The carbon nanotube fabric density is approximately 10 nanotubes per 0.2 x 0.2 um area, for example. The suspended length of the nanotube channel element is in the range of 300 to 350 nm, for example. The suspended length to gap ratio is about 5 to 15 to 1 for non-volatile devices, and less than 5 for volatile operation, for example.
[0038] Figure 1B is a plan view or layout of nanotube switching element 100.
As shown in this figure, electrodes 113b,d are electrically connected as depicted by the notation 'X' and item 102. Likewise electrodes 113a,c are connected as depicted by the 'X'. In preferred embodiments the electrodes are further connected by connection 120. All of the output electrodes collectively form an output node 113 of the switching element 100.
[0039] Under preferred embodiments, the nanotube switching element 100 of figures 1A and 1B operates as shown in figures 1C and D. Specifically, nanotube switching element 100 is in an OPEN (OFF) state when nanotube channel element is in position 122 of figure 1C. In such state, the channel element 115 is drawn into mechanical contact with dielectric layer 119 via electrostatic forces created by the potential difference between electrode 112 and channel element 115. Output electrodes 113a,b are in mechanical contact (but not electrical contact) with channel element 115.
Nanotube switching element 100 is in a CLOSED (ON) state when channel element 115 is elongated to position 124 as illustrated in figure 1D. In such state, the channel element 115 is drawn into mechanical contact with dielectric layer 118 via electrostatic forces created by the potential difference between electrode 111 and channel element 115. Output electrodes 113c,d are in mechanical contact and electrical contact with channel element 115 at regions 126. Consequently, when channel element 115 is in position 124, signal electrodes 114a and 114b are electrically connected with output terminals 113c,d via channel element 115, and the signal on electrodes 114 a,b may be transferred via the channel (including channel element 115) to the output electrodes 113c,d.
[0040] By properly tailoring the geometry of nanotube switching element 100, the nanotube switching element 100 may be made to behave as a non-volatile or a volatile switching element. By way of example, the device state of figure 1D may be made to be non-volatile by proper selection of the length of the channel element relative to the gap 6104. (The length and gap are two parameters in the restoring force of the elongated, deflected channel element 115.) Length to gap ratios of greater than 5 and less than 15 are 'preferred for non-volatile device; length to gap ratios of less than 5 are preferred for volatile devices.
[0041] The nanotube switching element 101 operates in the following way. If signal electrode 114 and control electrode 111 (or 112) have a potential difference that is sufficiently large (via respective signals on the electrodes), the relationship of signals will create an electrostatic force that is sufficiently large to cause the suspended, nanotube channel element 115 to deflect into mechanical contact with electrode 111 (or 112). (This aspect of operation is described in the incorporated patent references.) This deflection is depicted in figure 1D (and 1C). The attractive force streches and deflects the nanotube fabric of channel element 115 until it contacts the insulated region 118 of the electrode 111. The nanotube channel element is thereby strained, and there is a restoring tensil force, dependent on the geometrical relationship of the circuit, among other things.
[0042] By using appropriate geometries of components, the switching element then attains the closed, conductive state of figure 1D in which the nanotube channel 115 mechanically contacts the control electrode 111 and also output electrode 113c,d. Since the control electrode 111 is covered with insulator 118 any signal on electrode 114 is transferred from the electrode 114 to the output electrode 113 via the nanotube channel element 115. The signal on electrode 114 may be a varying signal, a fixed signal, a reference signal, a power supply line, or ground line. The channel formation is controlled via the signal applied to the electrode 111 (or 112). Specifically the signal applied to control electrode 111 needs to be sufficiently different in relation to the signal on electrode 114 to create the electrostatic force to deflect the nanotube channel element to cause the channel element 115 to deflect and to form the channel between electrode 114 and output electrode 113, such that switching element 100 is in the CLOSED (ON) state.
[0043] In contrast, if the relationship of signals on the electrode 114 and control electrode 111 is insufficiently different, then the nanotube channel element 115 is not deflected and no conductive channel is formed to the output electrode 113.
Instead, the channel element 115 is attracted to and physically contacts the insulation layer on release electrode 112. This OPEN (OFF) state is shown in figure 1 C. The nanotube channel element 115 has the signal from electrode 114 but this signal is not transferred to the output node 113. Instead, the state of the output node 113 depends on whatever circuitry it is connected to and the state of such circuitry. The state of output node 113 in this regard is independent of channel element voltage from signal electrode 114 and nanotube channel element 115 when the switching element 100 is in the OPEN
(OFF) state.
[0044] If the voltage difference between the control electrode 111 (or 112) and the channel element 115 is removed, the channel element 115 returns to the non-elongated state (see figure 1A) if the switching element 100 is designed to operate in the volatile mode, and the electrical connection or path between the electrode 115 to the output node 113 is opened.
[0045] Preferably, if the switching element 100 is designed to operate in the non-volatile mode, the channel element is not operated in a manner to attain the state of figure lA. Instead, the electrodes 111 and 112 are expected to be operated so that the channel element 115 will either be in the state of figure 1C or 1D.
[0046] The output node 113 is constructed to include an isolation structure in which the operation of the channel element 115 and thereby the formation of the channel is invariant to the state of the output node 113. Since in the preferred embodiment the channel element is electromechanically deflectable in response to electrostatically attractive forces, a floating output node 113 in principle could have any potential.
Consequently, the potential on an output node may be sufficiently different in relation to the state of the channel element 115 that it would cause deflection of the channel element 115 and disturb the operation of the switching element 100 and its channel formation; that is, the channel formation would depend on the state of an unknown floating node. In the preferred embodiment this problem is addressed with an output node that includes an isolation structure to prevent such disturbances from being caused.
[0047] Specifically, the nanotube channel element 115 is disposed between two oppositely disposed electrodes 113b,d (and also 113 a,c) of equal potential.
Consequently, there are equal but opposing electrostatic forces that result from the voltage on the output node. Because of the equal and opposing electrostatic forces, the state of output node 113 cannot cause the nanotube channel element 115 to deflect regardless of the voltages on output node 113 and nanotube channel element 115. Thus, the operation and formation of the channel is made invariant to the state of the output node.
[0048] Under certain embodiments of the invention, the nanotube switching element 100 of figure 1A may be used as pull-up and pull-down devices to form power-efficient circuits. Unlike MOS and other forms of circuits, the pull-up and pull down devices may be identical devices and need not have different sizes or materials. To facilitate the description of such circuits and to avoid the complexity of the layout and physical diagrams of figures 1A-D, a schematic representation has been developed to depict the switching elements.
[0049] Figure 2A is a schematic representation of a nanotube switching element 100 of figure 1A. The nodes use the same reference numerals. Figure 2A
illustrates a non-volatile device in which the restoring mechanical force caused by nanotube elongation is insufficient to overcome van der Waals forces such that nanotube element 115 remains in a first or second non-volatile state even when voltage is removed. In a first non-volatile state, nanotube switch 100 remains in the CLOSED (ON) state in contact with control electrode 111 (shown in figure 1D) and output electrodes 113c and 113d (shown in figure 1D) such that output electrode 113 is in contact with nanotube element 115, which in turn is in contact with signal electrode 114. In a second non-volatile state, nanotube element 115 remains in the OPEN (OFF) state in contact with release electrode 112 such that nanotube element 115 is not in contact with output electrode 113 as illustrated in figure 1C when voltage is removed. Figure 2A' is a schematic representation of a nanotube switching element 100 of figure lA. The nodes use the same reference numbers plus a prime (') to distinguish figure 2A' with respect to figure 2A. Figure 2A' illustrates a volatile device in which the restoring mechanical force caused by nanotube elongation is sufficient to disconnect nanotube element 115' from physical contact with control electrode 111' and physical and electrical contact with output electrode 113' thus breaking the contact between signal electrode 114' and output electrode 113'. The arrow 202 is used to show the direction of the mechanical restoring force of the nanotube channel element 115' . For example, as depicted, the channel element has a force away from control electrode 111', i.e., if the channel element 115' were deflected into contact with electrode 111' a mechanical restoring force would be in the direction of arrow 202. An arrow indicating the direction of the mechanical restoring force is only used for devices designed to operate in the volatile mode.
[0050] Figures 2B-C depict a nanotube channel element 100 when used in a pull-up arrangement and its states of operation. For example, figure 2B is a schematic representation of the nanotube switching element in the OPEN (OFF) state illustrated in figure 1C, in which node 114 and the nanotube channel element 115 are at VDD, the control electrode 111 is at a positive voltage, typically VDD, and the release electrode 112 is at zero volts. The nanotube channel element is not in electrical contact with output node 113. Figure 2C is a schematic representation of the nanotube switching element in the CLOSED (ON) state illustrated in figure 1D. In this case, signal node 114 and the nanotube channel element 115 are at VDD, the control electrode 111 is at zero volts, and the release electrode 112 is at a positive voltage, typically VDD. The nanotube channel element is deflected into mechanical and electrical contact with the output node 113. Moreover, if as described above, geometries are selected appropriately, the contact will be non-volatile as a result of the Van der Waals forces between the channel element and the control electrode. The state of electrical contact is depicted by the short black line 204 representing the nanotube channel element contacting the output terminal 113. This results in the output node 113 assuming the same signal (i.e., Vdd) as the nanotube channel element 115 and signal node 114.
[0051] Figures 3A-C are analogous to those of figures 2A-C, except they're used to depict a nanotube switching element 100 and its states when used as a pull-down device.
[0052] In figures 2 and 3, the nanotube switching element is always operated in a way (at least when power is applied) where the control electrode 111 and the release electrode 112 are always of opposite voltage values. If, for example, control 111 is at zero volts, then release 112 is at a positive voltage, typically VDD. If, however, control electrode 111 is at a positive voltage, typically VDD, then release electrode 112 is at zero volts. If a positive voltage is associated with a logic "1" state, and a zero voltage is associated with a logic "0" state, then logic states applied to input and release are true and complement, respectively (or complement and true, respectively).
[0053] In this regard, the nanotube switching element 100 is operated as a dual-rail differential logic element. Dual-rail differential logic design (or simply differential logic design) techniques applied to the non-volatile 4-terminal nanotube switching devices 100 of figure 1 may be used to result in a non-volatile dual-rail differential logic family by using such devices 100 to form fundamental building blocks for a logic family, e.g., NOT and NOR circuits. This non-volatile logic family will perform logic operations when activated, and preserve the logic state in a non-volatile mode when power is removed (or interrupted). This logic family may resume logic operation when power is restored, with each logic circuit in the same state as prior to power removal (or interruption). Circuit examples follow.
[0054] Figure 4 illustrates a dual rail inverter 420 according to certain embodiments of the invention. The inverter circuit 420 includes an upper portion 410T and a lower portion 410C.
[0055] The upper portion 410T includes a nanotube switching element 412 arranged as a pull-up device with the signal node connected to Vdd, and a nanotube switching element 414 arranged as a pull- down device with the signal node connected to ground.
Both switching elements receive a true version AT of logic signal A on their respective control nodes (111 of figure lA) via input link 411T, and both have their output nodes (113 of figure 1A) connected together to output node 413T, which provides a complement version A~ of logic signal A.
[0056] The lower portion 410C includes a nanotube switching element 416 arranged as a pull-up device with the signal node connected to Vdd, and a nanotube switching element 418 arranged as a pull- down device with the signal node connected to ground.
Both switching elements receive a complement version A~ of logic signal A on their respective control nodes (111 of figure lA) via input link 411C, and both have their output nodes (113 of figure lA) connected together to output node 413C, which provides true version AT of logic signal A.
[0057] The input 411T of upper portion 410T is coupled to the release nodes of both switching elements of the lower portion 410C. Likewise, the input 411C of lower portion 410C is coupled to the release nodes of both switching elements of the upper portion 410T.
[0058] Thus, inverter circuit 420 receives dual rail, differential inputs AT
and A~ of logic signal A, and provides corresponding inversions of the inputs on links 411 and 413, respectively, when operated as describ:~d above. Moreover, the logic is non-volatile, meaning the gate retains its state even if power were interrupted from the circuit. In addition, because the circuit is arranged as a complementary logic circuit with pull-up and pull-down devices, current flows (and power is consumed) only during switching, so there is no DC current between VDD and ground.
[0059] Figure 5, using the same schematic notation as above, depicts a non-volatile state device 520 of certain embodiments. The latch 520 is formed by cross-connecting inverters 510 and 511. Output node 512 of inverter 510 is connected to the control electrode inputs of inverter 511 and the release electrode inputs of inverter 510. Output node 513 is connected to the control electrode inputs of inverter 510 and the release electrode inputs of inverter 511. State device 520 is a non-volatile storage element; that is, state device 520 will retain its logic state if power is removed and assume the same state when power is restored. State device 520 can be combined with logic gates (not shown) to generate a non-volatile NRAM storage cell as illustrated in figure 6A, and various types of flip flops and latches used in logic design such as a S-R, J-K, and other flip flop structures. Figure 6B illustrates state devices 520 used in a latch configuration.
Current flows only during switching, so there is no DC current between VDD and ground.
[0060] Figure 6A illustrates a state device 620 used as a non-volatile nanotube static RAM cell (NRAM cell) 630 according to another embodiment of the invention. In this embodiment, the control electrodes of the upper inverter 510A, and the release electrodes of the lower inverter 511A, are connected to a logical bit line (BLT) input signal via select transistor 632 gated via signal WL and connected to state device 620 at node 621. The control electrodes of the lower inverter, and the release electrodes of the upper inverter, are connected to a complementary version (BLS) of logical bit line (BL) input signal via select transistor 634 gated via signal WL and connected to state device 620 node 622. In this fashion, a state device may be formed into a non-volatile NRAM
storage cell 630. Inverters 510A and 511A are designed to be identical in electrical characteristics so that the NRAM cell is balanced (does not favor one state over the other). Select devices 632 and 634 are designed to be sufficiently large so as to supply sufficient drive current to overcome the stored state of state device 620, as is well known in the art of static RAM cell design.
[0061] NRAM cell 630 has the advantage of non-volatile storage. Also, the nanotube latch portion 620 may be formed using separate layers. Select transistors 632 and 634 are the only semiconductors required in the cell region. The NRAM cell may be smaller than an SRAM cell because there is no need for a transistor latch.
Eliminating the transistor flip-flop also eliminates the need for both PMOS
and NMOS
transistors in cell, and both P-Well and N-Well regions to accommodate the respective NMOS and PMOS transistor source and drain diffusions. A non-volatile NRAM cell 630 may be smaller than a volatile (transistor-based) SRAM cell because only NMOS
select transistors 32 and 34 and contacts to nanotube based latch 620 layers are required. Current flows only during switching (cell write), or cell readout, so there is no DC current between VDD and ground. NRAM cell 630 is non-volatile; that is, the memory state is preserved if power is turned-off (or disturbed) and resumes operation in the same memory state as the memory state just prior to power turn-off (or interruption).
[0062] Figure 6B depicts a state device 660 used as a non-volatile nanotube latch 650 according to another embodiment of the invention. In this embodiment, the control electrodes of the upper inverter 510B, and the release electrodes of the lower iriverter 511B, are connected to a logical input signal AT (applied to INl) via select transistor 662 gated via clock signal CLK and connected to state device 660 at node 671 _ The control electrodes of the lower inverter, and the release electrodes of the upper inverter, are connected to a complementary version input signal A~ (applied to IN2) via select transistor 664 gated via clock signal CLK and connected to state device 660 node 672.
In this fashion, a state device may be formed into a nanotube latch 650.
Inverter 511B is designed to be the dominant inverter (composed of nanotube devices containing more nanotubes), and 510B is designed to be a feedback inverter (composed of nanotube devices containing less nanotubes) that supplies the charge necessary to compensate for discharge of a state device node in case of noise, for example, as described in the reference book H.B. Bakoglu, "Circuits, Interconnections, and Packaging for VLSI", Addison-Wesley Publishing Company, pages 349-351. Inverters 511B, 510B, and pass transistors 662 and 664 are ratioed to make sure that latch 660 will switch to the desired state when data is being written to it. Feedback inverter 510B has to be sufficiently weak so that circuits (not shown) that drive state device 660 through clocked dwices 662 and 664 can overpower feedback inverter 510B and overcome the latch 650 state stored in state device 660 in the Bakoglu reference. Complementary logic latch outputs are labeled OUT 1 and OUT2. Latch 650 is non-volatile; that is, the logic state is preserved if power is turned-off (or disturbed) and resumes operation in the same logic state as the logic state just prior to power turn-off (or interruption).
[0063] Figure 7 depicts a non-volatile, nanotube-based Cascode Voltage Switch Logic (CVSL) circuit 700 according to certain embodiments. Circuit 700 is composed of two complementary logic portions 740 and 742. The output of logic circuit 700 is required to generate both true 720T and complement 720C logic outputs. Logic circuit 700 is non-volatile; that is, the logic state is preserved if power is turned-off (or disturbed) and resumes operation in the same logic state as the logic state just prior to power turn-off (or interruption). Logic circuit 740 is a non-volatile nanotube-based NOR circuit, whose inputs are activated by A'and B in true and complement form, and whose corresponding output is (AT + BT)~ as illustrated in figure 7 . Logic circuit 742 is a non-volatile NAND circuit, whose output is AT + BT, when activated by inputs Ac and B~, and release A and B, as illustrated in figure 7. Current flows only during switching, and there is no DC current between VDD and GND.
[0064] As discussed, the 4-terminal devices of figure 1 may also be constructed with a nanotube length to gap size ratio of less than 5 to create a volatile device. This 4-terminal volatile device may also be operated as dual-rail, differential logic but will not preserve the logic state when the power to the circuit is interrupted. A
schematic representation of a volatile 4-terminal device is shown in figure ZA' . A 4-terminal volatile device may be operated as a 3-terminal volatile device if the release electrode is connected to the nanotube channel element through a low resistance electrical path such as a metallization layer. Referring to figure ZA', for example, release terminal 112' is electrically connected to nanotube signal electrode 114' . This allows single-rail volatile logic, dual-rail volatile logic, and dual-rail non-volatile logic to be mixed on a single substrate using nanotube switching devices designed for non-volatile operation, and nanotube switching devices designed for volatile operation. Figures 8A-~B show examples of a 4-terminal device used as a 3-terminal device in a four device volatile state device configuration.
[0065] Nanotube-based logic may be used in conjunction with and in the absence of diodes, resistors and transistors or as part of or a replacement to CMOS, biCMOS, bipolar and other transistor level technologies. Also, the non-volatile flip flop may be substitued for an SRAM flip flop to create a NRAM cell. The interconnect wiring used to interconnect the nanotube device terminals may be conventional wiring such as AICu, W, or Cu wiring with appropriate insulating layers such as Si02, polyimide, etc, or may be single or mufti-wall nanotubes used for wiring.
[0066] The inventors envision additional configurations of volatile and nonvolatile or mixed nanoelectromechanical designs depending upon the specific application, speed, power requirements and density desired. Additionally the inventors foresee the use of multiwalled carbon nanotubes or nanowires as the switching element of contact points within the switch. As the technology node decreases in size from 90 nm to 65 nm and below down to the size of individual nanotubes or nanowires the inventors foresee adapting the basic electromechanical switching elements and their operation to a generation of nanoscale devices with scaleable performance characteristics concomitant with such size reduction.
[0067] The nanotube switching element of preferred embodiments utilizes multiple controls for the formation and unformation of the channel. In some embodiments, the device is sized to create a non-volatile device and one of the electrodes may be used to form a channel and the other may be used to unform a channel. The electrodes may be used as differential dual-rail inputs.
Alternatively they may be set and used at different times. For example, the control electrode may be used in the form of a clock signal, or the release electrode may be used as a form of clocking signal. Also, the control electrode and release electrode may be placed at the same voltage, for example, such that the state of the nanotube cannot be disturbed by noise sources such as voltage spikes on adjacent wiring nodes.
[0068] A figure 1 device may be designed to operate as a volatile or non-volatile device. In the case of a volatile device, the mechanical restoring force due to nanotube elongation is stronger than the van der Waals retaining force, and the nanotube mechanical contact with a control or release electrode insulator is broken when the electrical field is removed. Typically, nanotube geometrical factors such as suspended length to gap ratios of less than 5 to 1 are used for volatile devices. In the case of a non-volatile device, the mechanical restoring force due to nanotube elongation is weaker than the van der Waals retaining force, and the nanotube mechanical contact with a control or release electrode insulator remains un-broken when the electric field is removed. Typically, nanotube geometrical factors such as suspended length to gap ratios of greater than 5 to 1 and less than 15 to 1 are used for non-volatile devices. An applied electrical field generating an electromechanical force is required to change the state of the nanotube device. Van der Waals forces between nanotubes and metals and insulators are a function of the material used in the fabrication nanotube switches. By way of example, these include insulators such as silicon dioxide and silicon nitride, metals such as tungsten, aluminum, copper, nickel, palladium, and semiconductors such as silicon. For the same surface area, forces will vary by less than 5°Io for some combinations of materials, or may exceed 2X for other combinations of materials, so that the volatile and non-volatile operation is determined by geometrical factors such as suspended length and gap dimensions and materials selected. It is, however, possible to design devices by choosing both geometrical size and materials that exhibit stronger or weaker van der Waals forces. By way of example, nanotube suspended length and gap height and fabric layer density, control electrode length, width, and dielectric layer thickness may be varied. Output electrode size and spacing to nanotube may be varied as well. Also, a layer specifically designed to increase van der Waals forces (not shown) may be added during the fabrication nanotube switching element 100 illustrated in figure 1. For example, a thin (5 to 10 nm, for example) layer of metal (not electrically connected), semiconductor (not electrically connected), or insulating material may be added (not shown) on the insulator layer associated with control electrode 111 or release electrode 112 that increases the van der Waals retaining force without substantial changes to device structure for better non-volatile operation. In this way, both geometrical sizing and material selection are used to optimize device operation, in this example to optimize non-volatile operation.
[0069] In a complementary circuit such as an inverter using two nanotube switching elements 100 with connected output terminals, there can be momentary current flow between power supply and ground in the inverter circuit as the inverter changes from one logic state to another logic state. In CMOS, this occurs when both PFET and NFET are momentarily ON, both conducting during logic state transition and is sometimes referred to as "shoot-through" current. In the case of electromechanical inverters, a momentary current may occur during change of logic state if the nanotube fabric of a first nanotube switch makes conductive contact with the first output structure before the nanotube fabric of a second nanotube switch releases conductive contact with the second output structure. If, however, the first nanotube switch breaks contact between the first nanotube fabric and the first output electrode before the second nanotube switch makes contact between the second nanotube fabric and the second output electrode, then a break-before-make inverter operation occurs and "ShoOt-through" current is minimized or eliminated. Electromechanical devices that favor break-before-make operation may be designed with different gap heights above and below the nanotube switching element, for example, such that forces exerted on the nanotube switching element by control and release electrodes are different;
and/or travel distance for the nanotube switching element are different in one direction than another;
and/or materials are selected (and/or added) to increase the van der Waals forces in one switching direction and weakening van der Waals forces in the opposite direction.
[0070] By way of example, nanotube switching element 100 illustrated in figure may be designed such that gap 6102 is substantially smaller (50% smaller, for example) than gap 6104. Also, gap 6103 is made bigger such that nanotube element 115 contact is delayed when switching. Also, dielectric thicknesses and dielectric constants may be different such that for the same applied voltage differences, the electric field between release electrode 112 and nanotube element 115 is stronger than the electric field between control electrode 111 and nanotube element 115, for example, to more quickly disconnect nanotube element 115 from output terminals 113c and 113d. Output electrodes 113c and 113d may be designed to have a small radius and therefore a smaller contact area in a region of contact with nanotube element 115 compared with the size (area) of contact between nanotube element 115 and the insulator on control terminal 111 to facilitate release of contact between nanotube element 115 and output electrodes 113c and 1134. The material used for electrodes 113c and 113d may be selected to have weaker van der Waals forces respect to nanotube element 115 than the van der Waals forces between nanotube element 115 and the insulator on release electrode 112, for example. These, and other approaches, may be used to design a nanotube switching element that favors make-before-break operation thus minimizing or eliminating "shoot-through" current as circuits such as inverters switch from one logic state to another.
[0071] The material used in the fabrication of the electrodes and contacts used in the nanotube switches is dependent upon the specific application, i.e. there is no specific metal necessary for the operation of the present invention.
[0072] Nanotubes can be functionalized with planar conjugated hydrocarbons such as pyrenes which may then aid in enhancing the internal adhesion between nanotubes within the ribbons. The surface of the nanotubes can be derivatized to create a more hydrophobic or hydrophilic environment to promote better adhesion of the nanotube fabric to the underlying electrode surface. Specifically, functionalization of a wafer/substrate surface involves "derivitizing" the surface of the substrate.
For example, one could chemically convert a hydrophilic to hydrophobic state or provide functional groups such as amines, carboxylic acids, thiols or sulphonates to alter the surface characteristics of the substrate. Functionalization may include the optional primary step of oxidizing or ashing the substrate in oxygen plasma to remove carbon and other impurities from the substrate surface and to provide a uniformly reactive, oxidized surface which is then reacted with a silane. One such polymer that may be used is 3-aminopropyltriethoxysilane (APTS). The substrate surface may be derivitized prior to application of a nanotube fabric.
[0073] While single walled carbon nanotubes are preferred, mufti-walled carbon nanotubes may be used. Also nanotubes may be used in conjunction with nanowires.
Nanowires as mentioned herein is meant to mean single nanowires, aggregates of non-woven nanowires, nanoclusters, nanowires entangled with nanotubes comprising a nanofabric, mattes of nanowires, etc. The invention relates to the generation of nanoscopic conductive elements used for any electronic application.
[0074] The following patent references refer to various techniques for creating nanotube fabric articles and switches and are assigned to the assignee of this application. Each is hereby incorporated by reference in their entirety.
U.S. Pat. Apl. Ser. No. 10/341,005, filed on January 13, 2003, entitled Methods of Making Carbon Nahotube Films, Layers, Fabrics, Ribboyis, Elements and Articles;
U.S. Pat. Apl. Ser. No. 09/915,093, filed on July 25, 2001, entitled Electromeclzayzical Memory Array Using Na~eotube Ribboz2s ahd Method for Making Sazne;

U.S. Pat. Apl. Ser. No. 10/033,032, filed on December 28, 2001, entitled Methods of Making Electromechanical Three-Trace Junction Devices;
U.S. Pat. Apl. Ser. No. 10/033,323, filed on December 28, 2001, entitled Electromechanical Three-Trace Junction Devices;
U.S. Pat. Apl. Ser. No. 10/128,117, filed on April 23, 2002, entitled Methods of NT Films and Articles;
U.S. Pat. Apl. Ser. No. 10/341,055, filed January 13, 2003, entitled Methods of Using Thin Metal Layers to Make Carbon Nanotube Films, Layers, Fabrics, Ribbons, Elements and Articles;
U.S. Pat. Apl. Ser. No. 10/341,054, filed January 13, 2003, entitled Methods of Using Pre formed Nanotubes to Make Carbon Nanotube Films, Layers, Fabrics, Ribbons, Elements and Articles;
U.S. Pat. Apl. Ser. No. 10/341,130, filed January 13, 2003, entitled Carbon Nanotube Filrsts, Layers, Fabrics, Ribbons, Elements and Articles;
U.S. Pat. Apl., Ser. No. 10/776,059, filed February 11, 2004, entitled Devices Having Horizontally-Disposed Nanofabric Articles and Methods of Making Th.e Same; and U.S. Pat. Apl., Ser. No. 10/776,572, filed February 11, 2004, entitled Devices Having Vertically-Disposed Nanofabric Articles and Methods of Making the Satne.
[0075] The invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are therefore to be considered in respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of the equivalency of the claims are therefore intended to be embraced therein.
What is claimed is:

Claims (40)

1. A switching element, comprising an input node;
an output node;
a nanotube channel element having at least one electrically conductive nanotube;
a control structure disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said input node and said output node, wherein said channel at least includes said nanotube channel element; and wherein said output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node.
2. The switching element of claim 1 wherein the control structure includes a control electrode and a release electrode, disposed on opposite sides of the nanotube channel element.
3. The switching element of claim 1 wherein channel formation is a non-volatile state.
4. The switching element of claim 2 wherein said control electrode and said release electrode are arranged in relation to the nanotube channel element to form and unform said conductive channel by causing electromechanical deflection of said nanotube channel element.
5. The switching element of claim 4 wherein the electromechanical deflection causes a nanotube channel element to physically contact the output terminal.
6. The switching element of claim 1 wherein said output node includes an isolation structure disposed in relation to the nanotube channel element so that channel formation is substantially invariant from the state of the output node.
7. The switching element of claim 6 wherein said nanotube channel element is deflectable in response to electrostatic forces and wherein said isolation structure causes an electrostatic field to insulate the physical position of the nanotube channel element from disturbance by the state of the output node.
8. The switching element of claim 7 wherein said isolation structure includes two sets of electrodes disposed on opposite sides of the control structure, each set of electrodes including electrodes disposed on opposite side of the nanotube channel element.
9. The switching element of claim 8 wherein the two sets of electrodes are symmetrically disposed in relation to control structure.
10. The switching element of claim 8 wherein at least one of the electrodes is covered with an insulator.
11. The switching element of claim 2 wherein said nanotube channel element is in electrical communication with the input node and is positioned in spaced and crossed relation relative to the control electrode and the release node and wherein deflection of said nanotube channel element is in response to electrostatic forces resulting from signals on the input node, the control electrode and the release node.
12. The switching element of claim 2 wherein deflection of the nanotube channel element is in response to a differential signal relationship applied to the control electrode and the release electrode.
13. The switching element of claim 2 wherein the control electrode has a first spaced relation relative to the nanotube channel element and wherein the release electrode has a second spaced relation relative to the nanotube channel element and wherein the output node includes an output electrode that has a third spaced relation relative to the nanotube channel element, and wherein the electrostatic attraction of the nanotube channel element, induced in part by the control electrode, causes the nanotube channel element to contact said output electrode and wherein the electrostatic attraction of the nanotube channel element, induced in part by the release electrode, causes the nanotube channel element to terminate contact with said output electrode.
14. The switching element of claim 13 wherein said first, second and third spaced relations have different magnitudes.
15. The switching element of claim 1 wherein said nanotube channel element has a lithographically-defined shape.
16. The switching element of claim 1 wherein said nanotube channel element is constructed from nanofabric.
17. The switching element of claim 16 wherein said nanotube channel element is constructed from highly porous nanofabric.
18. The switching element of claim 2 wherein said control electrode is covered with an insulator.
19. The switching element of claim 2 wherein said release electrode is covered with an insulator.
20. The switching element of claim 2 wherein said nanotube channel element is positionable into one of at least two positional states in response to the relationship of signals on the nanotube channel element, the control electrode, and the release electrode, wherein one of at least two positional states is defined by the nanotube channel element being in a floating state, not in electrical communication with said output node.
21. A Boolean logic circuit, comprising at least one set of differential input terminals and an output terminal;
a network of nanotube switching elements electrically disposed between said at least one set of differential input terminals and said output terminal;

said network of nanotube switching elements effectuating a Boolean function transformation of Boolean signals on said at least one set of differential input terminals.
22. The Boolean logic circuit of claim 21 wherein said network of nanotube switching elements effectuates a Boolean NOT function of signals on the at least one set of differential input terminals.
23. The Boolean logic circuit of claim 21 wherein said network of nanotube switching elements effectuates a Boolean NOR function of signals on at least first and second sets of differential input terminals.
24. The Boolean logic circuit of claim 21 wherein said network of nanotube switching elements effectuates a Boolean NAND function of signals on at least first and second sets of differential input terminals.
25. The Boolean logic circuit of claim 23 wherein said circuit is a cascode voltage switch logic circuit and wherein said network of nanotube switching elements further effectuates a Boolean NAND function of signals on at least first and second sets of differential input terminals.
26. A Boolean logic circuit, comprising at least one input terminal and an output terminal;

a network of nanotube switching elements electrically disposed between said at least one input terminal and said output terminal;
said network of nanotube switching elements effectuating a Boolean function transformation of Boolean signals on said at least one input terminal and at least one of said nanotube switching elements being capable of non-volatilely retaining informational state.
27. The Boolean logic circuit of claim 26 wherein the at least one nanotube switching elements capable of non-volatilely retaining informational state includes a nanotube channel element having at least one electrically conductive nanotube and a control structure disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between an input node of the at least one switching element and an output node of the at least one switching element.
28. The switching element of claim 27 wherein the control structure includes a control electrode and a release electrode, disposed on opposite sides of the nanotube channel element.
29. The Boolean logic circuit of claim 21 wherein said network of nanotube switching elements includes a first and a second nanotube switching element, each nanotube switching element, including an output node;
a nanotube channel element having at least one electrically conductive nanotube; and a control electrode disposed in relation to the nanotube channel element to controllably form an electrically conductive channel to the output node;
a release electrode disposed in relation to the nanotube channel element to controllably unform said electrically conductive channel to the output node;
wherein a first of the differential input terminals of the Boolean logic circuit is in electrical communication with the control electrode of the first and a second nanotube switching elements;
wherein a second of the differential input terminals of the Boolean logic circuit is in electrical communication with the release electrode of the first and a second nanotube switching elements;
wherein the output node of the first and a second nanotube switching elements are electrically coupled together and to the output terminal of the Boolean logic circuit;
wherein the nanotube channel element of the first nanotube switching element is in electrical communication with a logical true value, and the nanotube channel element of a second nanotube switching element is in electrical communication with a logical false value.
30. The Boolean logic circuit of claim 29 wherein channel formation of either the first and second nanotube switching element is caused by electromechanical deflection of said nanotube channel element to cause contact between said nanotube channel element and said output node.
31. The Boolean logic circuit of claim 30 wherein said nanotube channel element is deflectable in response to electrostatic forces caused by the relationship of signals on the nanotube channel element, on the control electrode and on the release electrode, and wherein each of the first and second nanotube switching elements includes an isolation structure disposed in relation to the nanotube channel element so that channel formation is substantially invariant from the state of the output node.
32. The Boolean logic circuit of claim 31 wherein each nanotube channel element is positionable into one of at least two positional states in response to the relationship of signals on the nanotube channel element, the control electrode and the release electrode, wherein one of at least two positional states is defined by the nanotube channel element being in a floating state, not in electrical communication with said output node.
33. The Boolean logic circuit of claim 32 wherein the positional state of each nanotube channel element is maintained in the absence of signals on the nanotube element, the control electrode and the release electrode.
34. The Boolean logic circuit of claim 26 wherein said network of nanotube switching elements includes a first and a second nanotube switching element, each nanotube switching element, including an output node;

a nanotube channel element having at least one electrically conductive nanotube; and a control electrode disposed in relation to the nanotube channel element to controllably form an electrically conductive channel to the output node;
a release electrode disposed in relation to the nanotube channel element to controllably unform said electrically conductive channel to the output node;
wherein the input terminal of the Boolean logic circuit is in electrical communication with the control electrode of the first and a second nanotube switching elements;
wherein a release signal is in electrical communication with the release electrode of the first and a second nanotube switching elements;
wherein the output node of the first and a second nanotube switching elements are electrically coupled together and to the output terminal of the Boolean logic circuit;
wherein the nanotube channel element of the first nanotube switching element is in electrical communication with a logical true value, and the nanotube channel element of a second nanotube switching element is in electrical communication with a logical false value.
35. A latch circuit, comprising:
at least one input terminal and an output terminal;

a first and a second inverter circuit, each inverter circuit includes a nanotube switching element having an input node, an output node, a nanotube channel element having at least one electrically conductive nanotube, a control electrode disposed in relation to the nanotube channel element to controllably form an electrically conductive channel to the output node, a release electrode disposed in relation to the nanotube channel element to controllably unform the electrically conductive channel to the output node;
wherein the output node of the first inverter circuit is coupled to the control electrode of the second inverter circuit, and the output node of the second inverter circuit is coupled to the control electrode of the first inverter circuit.
36. The latch of claim 35 wherein each inverter circuit includes another nanotube switching element, with the nanotube switching element and the other nanotube switching element being arranged as complementary pull-up and pull-down switching elements, with the nanotube channel element of one switching element being coupled to logical true value and the nanotube channel element of the other switching element being coupled to logical false.
37. The latch of claim 36 wherein the output node of the first inverter is coupled to the control electrodes of the second inverter circuit and the release electrodes of the first inverter, and wherein the output node of the second inverter is coupled to the control electrodes of the first inverter and the release electrodes of the second inverter.
38. The latch circuit of claim 36 wherein channel formation of the nanotube switching elements is caused by electromechanical deflection of said nanotube channel element to cause contact between said nanotube channel element and said output node.
39. The latch circuit of claim 36 wherein each nanotube channel element is positionable into one of at least two positional states in response to the relationship of signals on the nanotube channel element and the control electrode, wherein one of at least two positional states is defined by the nanotube channel element being in a floating state, not in electrical communication with said output node.
40. The latch circuit of claim 39 wherein the positional state of each nanotube channel element is maintained in the absence of signals on the nanotube element, the control electrode and the release electrode.
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