CA981793A - Two-terminal nondestructive read jfet-npn transistor semiconductor memory - Google Patents

Two-terminal nondestructive read jfet-npn transistor semiconductor memory

Info

Publication number: CA981793A
Authority: CA; Canada
Prior art keywords: jfet; terminal; semiconductor memory; npn transistor; transistor semiconductor
Prior art date: 1972-06-09
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA159,350A

Other versions

CA159350S (en

Inventor

Dennis J. Lynes

Peter T. Panousis

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

AT&T Corp

Original Assignee

Western Electric Co Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1972-06-09

Filing date

1972-12-19

Publication date

1976-01-13

1972-12-19 Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc

1976-01-13 Application granted granted Critical

1976-01-13 Publication of CA981793A publication Critical patent/CA981793A/en

Status Expired legal-status Critical Current

Links

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

CA159,350A 1972-06-09 1972-12-19 Two-terminal nondestructive read jfet-npn transistor semiconductor memory Expired CA981793A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US26141772A	1972-06-09	1972-06-09

Publications (1)

Publication Number	Publication Date
CA981793A true CA981793A (en)	1976-01-13

Family

ID=22993213

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA159,350A Expired CA981793A (en)	1972-06-09	1972-12-19	Two-terminal nondestructive read jfet-npn transistor semiconductor memory

Country Status (12)

Country	Link
US (1)	US3753248A (en)
JP (1)	JPS4963350A (en)
KR (1)	KR780000459B1 (en)
BE (1)	BE800605A (en)
CA (1)	CA981793A (en)
DE (1)	DE2328471A1 (en)
FR (1)	FR2188238B1 (en)
GB (1)	GB1429846A (en)
HK (1)	HK45877A (en)
IT (1)	IT984672B (en)
NL (1)	NL7308042A (en)
SE (1)	SE382515B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2348984A1 (en) *	1973-09-28	1975-04-24	Siemens Ag	ARRANGEMENT WITH FIELD EFFECT TRANSISTORS
US3916222A (en) *	1974-05-28	1975-10-28	Nat Semiconductor Corp	Field effect transistor switching circuit
JPS5185062A (en) *	1975-01-24	1976-07-26	Hitachi Ltd	YUNIBAA SARUKATSUPURINGU
US4030083A (en) *	1975-04-04	1977-06-14	Bell Telephone Laboratories, Incorporated	Self-refreshed capacitor memory cell
WO1986007487A1 (en) *	1985-06-07	1986-12-18	Anamartic Limited	Electrical data storage elements
JP2783579B2 (en) *	1989-03-01	1998-08-06	株式会社東芝	Semiconductor device
US5365477A (en) *	1992-06-16	1994-11-15	The United States Of America As Represented By The Secretary Of The Navy	Dynamic random access memory device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3394356A (en) *	1965-04-19	1968-07-23	Ibm	Random access memories employing threshold type devices
US3450967A (en) *	1966-09-07	1969-06-17	Vitautas Balio Tolutis	Selenium memory cell containing silver up to 2 atomic percent adjacent the rectifying contact

1972
- 1972-06-09 US US00261417A patent/US3753248A/en not_active Expired - Lifetime
- 1972-12-19 CA CA159,350A patent/CA981793A/en not_active Expired
1973
- 1973-05-28 SE SE7307541A patent/SE382515B/en unknown
- 1973-06-02 KR KR7300891A patent/KR780000459B1/en active
- 1973-06-05 DE DE2328471A patent/DE2328471A1/en active Pending
- 1973-06-07 GB GB2718173A patent/GB1429846A/en not_active Expired
- 1973-06-07 BE BE132004A patent/BE800605A/en unknown
- 1973-06-08 FR FR7321033A patent/FR2188238B1/fr not_active Expired
- 1973-06-08 JP JP48064010A patent/JPS4963350A/ja active Pending
- 1973-06-08 NL NL7308042A patent/NL7308042A/xx not_active Application Discontinuation
- 1973-06-11 IT IT1014/73A patent/IT984672B/en active
1977
- 1977-09-08 HK HK458/77A patent/HK45877A/en unknown

Also Published As

Publication number	Publication date
SE382515B (en)	1976-02-02
IT984672B (en)	1974-11-20
GB1429846A (en)	1976-03-31
JPS4963350A (en)	1974-06-19
KR780000459B1 (en)	1978-10-23
DE2328471A1 (en)	1973-12-20
BE800605A (en)	1973-10-01
FR2188238B1 (en)	1976-09-17
NL7308042A (en)	1973-12-11
HK45877A (en)	1977-09-16
FR2188238A1 (en)	1974-01-18
US3753248A (en)	1973-08-14

Publication	Publication Date	Title
CA922805A (en)	1973-03-13	Write once read only store semiconductor memory
CA998187A (en)	1976-10-05	Semiconductor mass memory
AU474357B2 (en)	1976-07-22	Semiconductor memory elements
JPS53127277A (en)	1978-11-07	Semiconductor memory
CA1005575A (en)	1977-02-15	Monolithic memory using partially defective chips
CA1025555A (en)	1978-01-31	Non-volatile semiconductor memory device
NL180892C (en)	1987-05-04	SEMICONDUCTOR MEMORY.
AU441498B2 (en)	1973-11-01	Semiconductor memory device
CA1001315A (en)	1976-12-07	Memory access device
CA981793A (en)	1976-01-13	Two-terminal nondestructive read jfet-npn transistor semiconductor memory
CA925617A (en)	1973-05-01	Read only memory
AT334662B (en)	1976-01-25	HIGHLY INTEGRATED SEMI-CONDUCTOR MEMORY
CA947867A (en)	1974-05-21	Computer memory device
IT948582B (en)	1973-06-11	MEMORY DEVICE
CA993995A (en)	1976-07-27	Two-terminal npn-pnp transistor semiconductor memory
CA1000404A (en)	1976-11-23	Semiconductor memory device
AU466581B2 (en)	1975-10-30	Memory write circuit
CA1012243A (en)	1977-06-14	Nondestructive read semiconductor memory utilizing avalanche breakdown
CA947868A (en)	1974-05-21	Two-terminal transistor memory utilizing saturation operation
ATA62373A (en)	1976-01-15	MEMORY CASSETTE
CA935919A (en)	1973-10-23	Write once read only store semiconductor memory
CA911605A (en)	1972-10-03	Optimized read only memory
CA874627A (en)	1971-06-29	Field effect transistor memory storage unit
CA826327A (en)	1969-10-28	Non-destructive read out thin film memory
CA912700A (en)	1972-10-17	Monolithic semiconductor memory