CN100338791C - 用于过电压保护的有机元件及相关电路 - Google Patents

用于过电压保护的有机元件及相关电路 Download PDF

Info

Publication number
CN100338791C
CN100338791C CNB038200430A CN03820043A CN100338791C CN 100338791 C CN100338791 C CN 100338791C CN B038200430 A CNB038200430 A CN B038200430A CN 03820043 A CN03820043 A CN 03820043A CN 100338791 C CN100338791 C CN 100338791C
Authority
CN
China
Prior art keywords
organic
threshold voltage
overvoltage protection
electronic component
functional layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB038200430A
Other languages
English (en)
Other versions
CN1679043A (zh
Inventor
沃尔特·菲克斯
迪特马·齐珀勒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pollick GmbH And AG Co.
Original Assignee
Pollick And AG Co GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pollick And AG Co GmbH filed Critical Pollick And AG Co GmbH
Publication of CN1679043A publication Critical patent/CN1679043A/zh
Application granted granted Critical
Publication of CN100338791C publication Critical patent/CN100338791C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/12—Overvoltage protection resistors
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K7/00—Methods or arrangements for sensing record carriers, e.g. for reading patterns
    • G06K7/0008—General problems related to the reading of electronic memory record carriers, independent of its reading method, e.g. power transfer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Artificial Intelligence (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Protection Of Static Devices (AREA)

Abstract

本发明涉及一种主要由有机材料构成的并为电子电路提供过电压保护的元件和一种电路，利用该电路可以实现单个元件阈值电压的成倍增加。

Description

用于过电压保护的有机元件及相关电路
技术领域
本发明涉及一种主要由有机材料构成的元件，其为电子电路提供过电压保护。
背景技术
众所周知，用于过电压保护的电子元件是基于在传统硅半导体技术基础上发展的无机电路的。作为例子，这里可以提到的是齐纳二极管和隧道二极管。
正在开发关于诸如RFID-标签(射频识别)、票据、可穿戴电子产品(结合到织物中的电子电路)等等的最低成本应用的有机电子元件和基于其的电路。它们价格不高而且可以利用简单的印刷工艺在大表面面积上生产。这些电路需要恒定的电压供应，在这种情况下必须要避免因电压巅值造成的损坏，例如，如果电路离发射天线太近或如果RFID-标签过快通过交变电磁场。迄今还未见过能与有机场效应晶体管相比的、主要包括有机材料的电子元件。
发明内容
因此，本发明的目的是提供一种电子元件，该元件主要包括有机材料并提供过电压保护，即，当电压下降低于或超过一可调阈值电压时，该元件起到截断电流流动的电阻器的作用并反之亦然，其中该元件的电容很低。
本发明的主题是一种用于过电压保护的电子元件，其主要包括有机功能高分子，该元件至少具有如下诸层：
衬底，
主要电极，
有机半导电功能层，和
次级电极，其中阈值电压可以通过选择电极材料和/或半导电功能层的材料加以调节。此外，本发明的主题是一种电路，其包括至少两个串联在一起用于过电压保护的主要包括有机材料的元件，其中该串联电路提供相应于单个元件的阈值电压的倍数的阈值电压。
根据本发明的一实施例，该元件包括在所述电极之一和所述有机半导体层之间的至少一个中间层。该中间层可以例如主要由有机和/或氧化材料构成。通过将至少一个中间层包括在内，可以在几伏之内对阈值电压进行调节。
该元件正向工作，即，一直到阈值电压之前没有电流(或者只有小到可忽略的电流)流过，然而高于阈值电压时则有很高的电流流过，这样功率受限的电流源的电压就会崩溃。在反向时，没有电流(或者只有小到可忽略的电流)流过。
根据一实施例，至少串联连接两个元件。通过这种方式，有可能实现相应于单个元件的阈值电压的倍数的所需阈值电压。
该元件简单的导电和半导电功能层结构允许其被集成到有机电路中。在这种情况下导电和/或半导电功能层可以通过一种工艺和/或通过公共工艺步骤(例如印刷工艺)生产。
以下将以实施例的方式更加详细地描述本发明。
附图说明
图1示出了没有中间层的、依据本发明的元件的简单结构；
图2示出了具有两个中间层的实施例；
图3示出了两个串联连接的元件；
图4示出了对应于图3的相应电流-电压曲线；以及
图5最后示出了一种包括横向结构的元件。
具体实施方式
图1示出了衬底1、和置于其上的(垂直结构的实施)主要电极2、置于主要电极上的半导电功能层3和半导电功能层3上的次级电极4，其中，衬底1例如包括诸如聚酯膜的柔性膜，主要电极2举例来说由诸如聚苯胺(Pani)、聚亚乙基二氧噻吩(Pedot)的有机材料或诸如金、铜、铝或钛的金属或合金构成，半导电功能层3是例如聚噻吩和/或聚芴的有机基的，而次级电极的材料还是例如Pani、Pedot或诸如金、铜、铝或钛的金属或合金。与传统元件相比，该元件具有高阈值电压，该阈值电压可以通过选择电极材料和半导体材料加以调节。
图2示出了一元件，对于层2到4以及衬底1而言，其具有可比于图1的层结构，但是在这种情况下，在主要电极2和半导电功能层3之间以及在半导电功能层3和次级电极4之间设置了各自中间层(5、6)，通过中间层可以偏移阈值电压。中间层5、6可以是变化最宽的材料，例如诸如聚噻吩、聚芴(两种材料可以掺杂或不掺杂)、Pani、Pedot的有机材料或诸如金属氧化物或硅氧化物的氧化材料。
图3示出了串联连接的两个元件，其中在本实施例中的层结构与图1中的单个元件的层结构相同。
图4示出了串联元件的电流-电压特性。可以看出，在这种情况下，多个元件的串联(图3)是如何还使获得相应于单个元件的阈值电压的倍数的阈值电压成为可能的。
最后，图5示出了如图1基本得知的元件的横向结构。这里可以再次看到衬底1、主要电极2、半导电功能层3和次级电极4。
阈值电压可以通过选择合适的电极和/或半导体材料加以很好地调节。同样，阈值电压可以通过诸如薄绝缘层或氧化物的一个或不同半导体材料的两个附加中间层加以偏移。多个元件的串联还允许对相关各自要求的粗略适应。
该元件的电容取决于层厚和有机半导体与材料有关的介电常数。通过适当厚度的层的方式可以保持低的电容。
该元件利用已知工艺制造。单个层通过溅射和/或气相淀积涂布，或者然而在处理诸如高分子的可溶性材料时，通过旋涂和/或其他涂布工艺和/或印刷工艺涂布。结构化一方面可以通过诸如蚀刻和浮脱的传统工艺结合光刻法来实现，或者另一方面可以通过印刷程序实现。
用专门术语描述，该元件，例如图1所示的，可以如下制造：在一柔性聚酯膜1上溅射一金属层2(例如金)并利用光刻和蚀刻将该金属层结构化。然后通过旋涂来涂布溶于溶液中的半导电高分子(例如聚噻吩)。在蒸发掉溶剂之后，所得的产物为一同质半导体层3。在其上溅射次级电极4(例如铝)-利用荫罩进行结构化-。
术语“有机”、“有机材料”或“功能高分子”或“高分子”这里包括各种各样的有机、金属有机和/或有机-无机塑料材料(混合物)，特别是英语中由例如“plastics(塑料)”表示的材料。这包括除构成传统二极管的半导体(锗、硅)和典型金属导体之外的各种物质。因此并没有教条地将有机材料局限在含碳材料的意思，而是同样承认例如硅酮的广泛使用。此外，本术语不受任何分子大小方面的限制，特别对高分子和/或低聚材料更是如此，而是肯定也可能使用小分子的。表达“功能高分子”中的单词成分“高分子”受到历史影响，从该方面来说，并不说明存在真实的高分子键合。
本发明首次提供了一种起过电压保护功能且能够集成到有机电路中的有机元件。

Claims (3)

1.一种用于过电压保护的电子元件，所述电子元件至少具有如下诸层：
衬底，
主要电极，
有机半导电功能层，和
次级电极，其中阈值电压能够通过选择所述主要和次级电极的材料和/或所述有机半导电功能层的材料加以调节，
其中至少所述有机半导电功能层包括有机功能聚合物。
2.如权利要求1所述的电子元件，其具有在所述电极之一和所述有机半导电功能层之间的至少一个中间层，且所述中间层由有机和/或氧化材料组成。
3.一种电路，其包括至少两个串联在一起用于过电压保护的如权利要求1和2之一所述的电子元件，其中所述电路提供相应于单个所述电子元件的阈值电压的倍数的阈值电压。
CNB038200430A 2002-08-23 2003-08-04 用于过电压保护的有机元件及相关电路 Expired - Fee Related CN100338791C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10238800 2002-08-23
DE10238800.8 2002-08-23

Publications (2)

Publication Number Publication Date
CN1679043A CN1679043A (zh) 2005-10-05
CN100338791C true CN100338791C (zh) 2007-09-19

Family

ID=31968990

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB038200430A Expired - Fee Related CN100338791C (zh) 2002-08-23 2003-08-04 用于过电压保护的有机元件及相关电路

Country Status (9)

Country Link
US (1) US7414513B2 (zh)
EP (1) EP1532570B1 (zh)
JP (1) JP2005537637A (zh)
CN (1) CN100338791C (zh)
AT (1) ATE355566T1 (zh)
DE (1) DE50306683D1 (zh)
ES (1) ES2282722T3 (zh)
HK (1) HK1075524A1 (zh)
WO (1) WO2004021256A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10043204A1 (de) * 2000-09-01 2002-04-04 Siemens Ag Organischer Feld-Effekt-Transistor, Verfahren zur Strukturierung eines OFETs und integrierte Schaltung
KR20070067686A (ko) * 2004-09-14 2007-06-28 코닌클리케 필립스 일렉트로닉스 엔.브이. 과전압 보호 디바이스 및, 이와 같은 디바이스를 포함하는무선 주파수 수신기 및 무선 주파수 식별 태그
DE102005031448A1 (de) 2005-07-04 2007-01-11 Polyic Gmbh & Co. Kg Aktivierbare optische Schicht
KR20100037964A (ko) * 2008-10-02 2010-04-12 삼성전자주식회사 트랜지스터, 그 제조 방법 및 트랜지스터의 문턱전압 조절방법
DE102009013685B4 (de) * 2009-03-20 2013-01-31 Novaled Ag Verwendung einer organischen Diode als organische Zenerdiode und Verfahren zum Betreiben

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996002924A1 (en) * 1994-07-14 1996-02-01 Surgx Corporation Single and multi-layer variable voltage protection devices and methods of making same
CN1227040A (zh) * 1996-07-29 1999-08-25 剑桥显示技术有限公司 具有电极保护的场致发光元件
CN1239329A (zh) * 1999-06-16 1999-12-22 复旦大学 超快速相变的有机电双稳器件
CN1344719A (zh) * 2001-10-11 2002-04-17 复旦大学 一种具有硫杂螺环结构的有机分子电子材料及其制备方法

Family Cites Families (110)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3512052A (en) 1968-01-11 1970-05-12 Gen Motors Corp Metal-insulator-semiconductor voltage variable capacitor with controlled resistivity dielectric
US3769096A (en) 1971-03-12 1973-10-30 Bell Telephone Labor Inc Pyroelectric devices
US3668483A (en) * 1971-08-19 1972-06-06 Us Navy Direct current solid state circuit breaker
JPS543594B2 (zh) 1973-10-12 1979-02-24
US3939363A (en) * 1974-02-25 1976-02-17 Westinghouse Electric Corporation Circuitry with zener diode voltage surge suppressor connected to serve as half wave rectifier
JPS54101176A (en) 1978-01-26 1979-08-09 Shinetsu Polymer Co Contact member for push switch
US4442019A (en) 1978-05-26 1984-04-10 Marks Alvin M Electroordered dipole suspension
US4340657A (en) 1980-02-19 1982-07-20 Polychrome Corporation Novel radiation-sensitive articles
EP0108650A3 (en) 1982-11-09 1986-02-12 Zytrex Corporation Programmable mos transistor
JPS60117769A (ja) 1983-11-30 1985-06-25 Fujitsu Ltd 半導体メモリ装置
US4573099A (en) * 1984-06-29 1986-02-25 At&T Bell Laboratories CMOS Circuit overvoltage protection
US4598331A (en) * 1984-07-30 1986-07-01 Technology Research Corporation Ground fault current interrupter circuit with open neutral and ground lead protection
DE3768112D1 (de) 1986-03-03 1991-04-04 Toshiba Kawasaki Kk Strahlungsdetektor.
US4797773A (en) * 1986-05-09 1989-01-10 Transtector Systems, Inc. Spatial array filtering system for electrical devices
DE3751376T2 (de) 1986-10-13 1995-11-16 Canon Kk Schaltungselement.
US4977357A (en) * 1988-01-11 1990-12-11 Shrier Karen P Overvoltage protection device and material
US5068634A (en) * 1988-01-11 1991-11-26 Electromer Corporation Overvoltage protection device and material
GB2215307B (en) 1988-03-04 1991-10-09 Unisys Corp Electronic component transportation container
US4910389A (en) * 1988-06-03 1990-03-20 Raychem Corporation Conductive polymer compositions
DE68912426T2 (de) 1988-06-21 1994-05-11 Gec Avery Ltd Herstellung von tragbaren elektronischen Karten.
US5364735A (en) 1988-07-01 1994-11-15 Sony Corporation Multiple layer optical record medium with protective layers and method for producing same
US4937119A (en) 1988-12-15 1990-06-26 Hoechst Celanese Corp. Textured organic optical data storage media and methods of preparation
US5892244A (en) 1989-01-10 1999-04-06 Mitsubishi Denki Kabushiki Kaisha Field effect transistor including πconjugate polymer and liquid crystal display including the field effect transistor
US6331356B1 (en) 1989-05-26 2001-12-18 International Business Machines Corporation Patterns of electrically conducting polymers and their application as electrodes or electrical contacts
EP0418504B1 (en) 1989-07-25 1995-04-05 Matsushita Electric Industrial Co., Ltd. Organic semiconductor memory device having a MISFET structure and its control method
US5206525A (en) 1989-12-27 1993-04-27 Nippon Petrochemicals Co., Ltd. Electric element capable of controlling the electric conductivity of π-conjugated macromolecular materials
US5099380A (en) * 1990-04-19 1992-03-24 Electromer Corporation Electrical connector with overvoltage protection feature
FR2664430B1 (fr) 1990-07-04 1992-09-18 Centre Nat Rech Scient Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques.
US5260848A (en) * 1990-07-27 1993-11-09 Electromer Corporation Foldback switching material and devices
US5142263A (en) * 1991-02-13 1992-08-25 Electromer Corporation Surface mount device with overvoltage protection feature
FR2673041A1 (fr) 1991-02-19 1992-08-21 Gemplus Card Int Procede de fabrication de micromodules de circuit integre et micromodule correspondant.
US5408109A (en) 1991-02-27 1995-04-18 The Regents Of The University Of California Visible light emitting diodes fabricated from soluble semiconducting polymers
FR2676870B1 (fr) * 1991-05-24 1994-12-23 Sgs Thomson Microelectronics Structure de protection dans un circuit cmos contre le verrouillage.
JPH0580530A (ja) 1991-09-24 1993-04-02 Hitachi Ltd 薄膜パターン製造方法
US5173835A (en) 1991-10-15 1992-12-22 Motorola, Inc. Voltage variable capacitor
JPH0770470B2 (ja) 1991-10-30 1995-07-31 フラウンホファー・ゲゼルシャフト・ツール・フォルデルング・デル・アンゲバンテン・フォルシュング・アインゲトラーゲネル・フェライン 照射装置
JP2709223B2 (ja) 1992-01-30 1998-02-04 三菱電機株式会社 非接触形携帯記憶装置
JP3457348B2 (ja) 1993-01-15 2003-10-14 株式会社東芝 半導体装置の製造方法
FR2701117B1 (fr) 1993-02-04 1995-03-10 Asulab Sa Système de mesures électrochimiques à capteur multizones, et son application au dosage du glucose.
US5567550A (en) 1993-03-25 1996-10-22 Texas Instruments Incorporated Method of making a mask for making integrated circuits
JPH0722669A (ja) 1993-07-01 1995-01-24 Mitsubishi Electric Corp 可塑性機能素子
AU7563294A (en) 1993-08-24 1995-03-21 Metrika Laboratories, Inc. Novel disposable electronic assay device
JP3460863B2 (ja) 1993-09-17 2003-10-27 三菱電機株式会社 半導体装置の製造方法
FR2710413B1 (fr) 1993-09-21 1995-11-03 Asulab Sa Dispositif de mesure pour capteurs amovibles.
US5556706A (en) 1993-10-06 1996-09-17 Matsushita Electric Industrial Co., Ltd. Conductive layered product and method of manufacturing the same
WO1995031833A2 (en) 1994-05-16 1995-11-23 Philips Electronics N.V. Semiconductor device provided with an organic semiconductor material
JP3246189B2 (ja) 1994-06-28 2002-01-15 株式会社日立製作所 半導体表示装置
DE4426307C2 (de) * 1994-07-25 2003-05-28 Bosch Gmbh Robert Integrierte Schaltung mit einem Gate Oxid und Testmöglichkeit für dieses bei der Herstellung
EP0709944A1 (en) * 1994-10-31 1996-05-01 STMicroelectronics S.r.l. Charge voltage regulator for a battery
US5574291A (en) 1994-12-09 1996-11-12 Lucent Technologies Inc. Article comprising a thin film transistor with low conductivity organic layer
US5630986A (en) 1995-01-13 1997-05-20 Bayer Corporation Dispensing instrument for fluid monitoring sensors
JP3068430B2 (ja) 1995-04-25 2000-07-24 富山日本電気株式会社 固体電解コンデンサ及びその製造方法
US5652645A (en) 1995-07-24 1997-07-29 Anvik Corporation High-throughput, high-resolution, projection patterning system for large, flexible, roll-fed, electronic-module substrates
US5625199A (en) 1996-01-16 1997-04-29 Lucent Technologies Inc. Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors
GB2310493B (en) 1996-02-26 2000-08-02 Unilever Plc Determination of the characteristics of fluid
DE19629656A1 (de) 1996-07-23 1998-01-29 Boehringer Mannheim Gmbh Diagnostischer Testträger mit mehrschichtigem Testfeld und Verfahren zur Bestimmung von Analyt mit dessen Hilfe
AUPO307296A0 (en) * 1996-10-18 1996-11-14 Erico Lightning Technologies Pty Ltd An improved lightning conductor
US6344662B1 (en) 1997-03-25 2002-02-05 International Business Machines Corporation Thin-film field-effect transistor with organic-inorganic hybrid semiconductor requiring low operating voltages
US5946551A (en) 1997-03-25 1999-08-31 Dimitrakopoulos; Christos Dimitrios Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric
KR100248392B1 (ko) 1997-05-15 2000-09-01 정선종 유기물전계효과트랜지스터와결합된유기물능동구동전기발광소자및그소자의제작방법
JP4509228B2 (ja) 1997-08-22 2010-07-21 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 有機材料から成る電界効果トランジスタ及びその製造方法
WO1999013441A2 (en) 1997-09-11 1999-03-18 Precision Dynamics Corporation Radio frequency identification tag on flexible substrate
US6251513B1 (en) * 1997-11-08 2001-06-26 Littlefuse, Inc. Polymer composites for overvoltage protection
WO1999030432A1 (en) 1997-12-05 1999-06-17 Koninklijke Philips Electronics N.V. Identification transponder
US5997817A (en) 1997-12-05 1999-12-07 Roche Diagnostics Corporation Electrochemical biosensor test strip
US5998805A (en) 1997-12-11 1999-12-07 Motorola, Inc. Active matrix OED array with improved OED cathode
US6083104A (en) 1998-01-16 2000-07-04 Silverlit Toys (U.S.A.), Inc. Programmable toy with an independent game cartridge
JP3911566B2 (ja) * 1998-01-27 2007-05-09 富士電機デバイステクノロジー株式会社 Ｍｏｓ型半導体装置
AU739848B2 (en) 1998-01-28 2001-10-18 Thin Film Electronics Asa A method for generation of electrical conducting or semiconducting structures in three dimensions and methods for erasure of the same structures
US6087196A (en) 1998-01-30 2000-07-11 The Trustees Of Princeton University Fabrication of organic semiconductor devices using ink jet printing
US6045977A (en) 1998-02-19 2000-04-04 Lucent Technologies Inc. Process for patterning conductive polyaniline films
US6033202A (en) 1998-03-27 2000-03-07 Lucent Technologies Inc. Mold for non - photolithographic fabrication of microstructures
GB9808061D0 (en) 1998-04-16 1998-06-17 Cambridge Display Tech Ltd Polymer devices
TW410478B (en) 1998-05-29 2000-11-01 Lucent Technologies Inc Thin-film transistor monolithically integrated with an organic light-emitting diode
US5967048A (en) 1998-06-12 1999-10-19 Howard A. Fromson Method and apparatus for the multiple imaging of a continuous web
US6215130B1 (en) 1998-08-20 2001-04-10 Lucent Technologies Inc. Thin film transistors
US6330464B1 (en) 1998-08-26 2001-12-11 Sensors For Medicine & Science Optical-based sensing devices
US6384804B1 (en) 1998-11-25 2002-05-07 Lucent Techonologies Inc. Display comprising organic smart pixels
US6506438B2 (en) 1998-12-15 2003-01-14 E Ink Corporation Method for printing of transistor arrays on plastic substrates
US6321571B1 (en) 1998-12-21 2001-11-27 Corning Incorporated Method of making glass structures for flat panel displays
US6114088A (en) 1999-01-15 2000-09-05 3M Innovative Properties Company Thermal transfer element for forming multilayer devices
GB2347013A (en) 1999-02-16 2000-08-23 Sharp Kk Charge-transport structures
AU5646800A (en) 1999-03-02 2000-09-21 Helix Biopharma Corporation Card-based biosensor device
US6207472B1 (en) 1999-03-09 2001-03-27 International Business Machines Corporation Low temperature thin film transistor fabrication
US6498114B1 (en) 1999-04-09 2002-12-24 E Ink Corporation Method for forming a patterned semiconductor film
US6072716A (en) 1999-04-14 2000-06-06 Massachusetts Institute Of Technology Memory structures and methods of making same
US6383664B2 (en) 1999-05-11 2002-05-07 The Dow Chemical Company Electroluminescent or photocell device having protective packaging
US6593690B1 (en) 1999-09-03 2003-07-15 3M Innovative Properties Company Large area organic electronic devices having conducting polymer buffer layers and methods of making same
US6517995B1 (en) 1999-09-14 2003-02-11 Massachusetts Institute Of Technology Fabrication of finely featured devices by liquid embossing
US6340822B1 (en) 1999-10-05 2002-01-22 Agere Systems Guardian Corp. Article comprising vertically nano-interconnected circuit devices and method for making the same
WO2001027998A1 (en) 1999-10-11 2001-04-19 Koninklijke Philips Electronics N.V. Integrated circuit
US6335539B1 (en) 1999-11-05 2002-01-01 International Business Machines Corporation Method for improving performance of organic semiconductors in bottom electrode structure
US6284562B1 (en) 1999-11-17 2001-09-04 Agere Systems Guardian Corp. Thin film transistors
US6621098B1 (en) 1999-11-29 2003-09-16 The Penn State Research Foundation Thin-film transistor and methods of manufacturing and incorporating a semiconducting organic material
US6197663B1 (en) 1999-12-07 2001-03-06 Lucent Technologies Inc. Process for fabricating integrated circuit devices having thin film transistors
AU2015901A (en) 1999-12-21 2001-07-03 Plastic Logic Limited Inkjet-fabricated integrated circuits
US6706159B2 (en) 2000-03-02 2004-03-16 Diabetes Diagnostics Combined lancet and electrochemical analyte-testing apparatus
US6329226B1 (en) 2000-06-01 2001-12-11 Agere Systems Guardian Corp. Method for fabricating a thin-film transistor
DE10033112C2 (de) 2000-07-07 2002-11-14 Siemens Ag Verfahren zur Herstellung und Strukturierung organischer Feldeffekt-Transistoren (OFET), hiernach gefertigter OFET und seine Verwendung
US7875975B2 (en) 2000-08-18 2011-01-25 Polyic Gmbh & Co. Kg Organic integrated circuit completely encapsulated by multi-layered barrier and included in RFID tag
DE10045192A1 (de) 2000-09-13 2002-04-04 Siemens Ag Organischer Datenspeicher, RFID-Tag mit organischem Datenspeicher, Verwendung eines organischen Datenspeichers
KR20020036916A (ko) 2000-11-11 2002-05-17 주승기 실리콘 박막의 결정화 방법 및 이에 의해 제조된 반도체소자
KR100390522B1 (ko) 2000-12-01 2003-07-07 피티플러스(주) 결정질 실리콘 활성층을 포함하는 박막트랜지스터 제조 방법
US20020170897A1 (en) 2001-05-21 2002-11-21 Hall Frank L. Methods for preparing ball grid array substrates via use of a laser
US6870180B2 (en) 2001-06-08 2005-03-22 Lucent Technologies Inc. Organic polarizable gate transistor apparatus and method
JP2003089259A (ja) 2001-09-18 2003-03-25 Hitachi Ltd パターン形成方法およびパターン形成装置
US7351660B2 (en) 2001-09-28 2008-04-01 Hrl Laboratories, Llc Process for producing high performance interconnects
US6946332B2 (en) 2002-03-15 2005-09-20 Lucent Technologies Inc. Forming nanoscale patterned thin film metal layers
US6812509B2 (en) 2002-06-28 2004-11-02 Palo Alto Research Center Inc. Organic ferroelectric memory cells
US6870183B2 (en) 2002-11-04 2005-03-22 Advanced Micro Devices, Inc. Stacked organic memory devices and methods of operating and fabricating

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996002924A1 (en) * 1994-07-14 1996-02-01 Surgx Corporation Single and multi-layer variable voltage protection devices and methods of making same
CN1227040A (zh) * 1996-07-29 1999-08-25 剑桥显示技术有限公司 具有电极保护的场致发光元件
CN1239329A (zh) * 1999-06-16 1999-12-22 复旦大学 超快速相变的有机电双稳器件
CN1344719A (zh) * 2001-10-11 2002-04-17 复旦大学 一种具有硫杂螺环结构的有机分子电子材料及其制备方法

Also Published As

Publication number Publication date
JP2005537637A (ja) 2005-12-08
WO2004021256A1 (de) 2004-03-11
ES2282722T3 (es) 2007-10-16
HK1075524A1 (en) 2005-12-16
CN1679043A (zh) 2005-10-05
DE50306683D1 (de) 2007-04-12
ATE355566T1 (de) 2006-03-15
EP1532570B1 (de) 2007-02-28
US20060098362A1 (en) 2006-05-11
EP1532570A1 (de) 2005-05-25
US7414513B2 (en) 2008-08-19

Similar Documents

Publication Publication Date Title
US10395841B2 (en) Multilayered electrode and film energy storage device
Khodabakhsh et al. Using self‐assembling dipole molecules to improve hole injection in conjugated polymers
EP2226836B1 (en) Method for manufacturing a thin film semiconductor device
US7276728B2 (en) Vertical organic transistor
US8723153B2 (en) Formulations for voltage switchable dielectric materials having a stepped voltage response and methods for making the same
US7276727B2 (en) Electronic devices containing organic semiconductor materials
US20080197343A1 (en) Organic Field Effect Transistor Gate
US20030122120A1 (en) Organic semiconductor device and method
JPH0945479A (ja) 有機エレクトロルミネセンス装置及び有機エレクトロルミネセンス装置の製造方法
CN100338791C (zh) 用于过电压保护的有机元件及相关电路
Kraft et al. Printed and organic diodes: devices, circuits and applications
US20060043887A1 (en) Light emitting devices with multiple light emitting layers to achieve broad spectrum
CN101421864A (zh) 电致发光器件
KR20080102366A (ko) 유기 발광 트랜지스터 소자 및 그 제조 방법
Alam et al. Binary blends of polymer semiconductors: nanocrystalline morphology retards energy transfer and facilitates efficient white electroluminescence
SE503039C2 (sv) Elektroluminescerande anordning samt sätt att framställa denna
EP1461832A1 (en) Organic semiconductor and method
JP2005526353A (ja) スクリーンプリンティング処理によるエレクトロルミネッセンスの製造法
Olivati et al. Polymer light emitting devices with Langmuir–Blodgett (LB) films: Enhanced performance due to an electron-injecting layer of ionomers
WO1997044829A1 (fr) Resistance negative du type a dispersion de molecules et son procede de production
US20060081816A1 (en) Material for the production of a conductive organic funtional layer and use thereof
CN1156198C (zh) 柔性有机电致发光器件
Lilja Performance, interfacial properties and applications of printed organic diodes
US7238306B2 (en) Conformal tribocharge-reducing coating

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: POLK LIMITED PARTNERSHIP

Free format text: FORMER OWNER: SIEMENS AG

Effective date: 20051104

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20051104

Address after: Erlangen

Applicant after: Pollick GmbH And AG Co.

Address before: Munich, Germany

Applicant before: Siemens AG

C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20070919

Termination date: 20140804

EXPY Termination of patent right or utility model