CN100385693C - Method for raising radiation of silicone based crystal thin film by use of process of plasma - Google Patents
Method for raising radiation of silicone based crystal thin film by use of process of plasma Download PDFInfo
- Publication number
- CN100385693C CN100385693C CNB2005100906426A CN200510090642A CN100385693C CN 100385693 C CN100385693 C CN 100385693C CN B2005100906426 A CNB2005100906426 A CN B2005100906426A CN 200510090642 A CN200510090642 A CN 200510090642A CN 100385693 C CN100385693 C CN 100385693C
- Authority
- CN
- China
- Prior art keywords
- thin film
- film
- crystal
- plasma
- plasma treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
Specially, the invention is related to method for raising luminescence of silicon based crystal thin film by using process of plasma. The method includes steps: (1) preparing Er-Si-O sol according to certain ratio of chemical dose; (2) spin coating a layer of thin film of Er-Si-O dried gel xerogel on conventional processed silicon substrate; (3) high sintering to reach total thickness of thin film of Er-Si-O dried gel xerogel, and generating thin film of Er-Si-O crystal in situ; (4) processing thin film of silicon based Er-Si-O crystal by using N plasma produced by equipment of plasma enhanced chemical vapor deposition (PECVD); (5) two times of annealing thin film of Er-Si-O crystal processed by plasma in order to diffuse N element in thin film well, lower symmetry of crystal field around Er3+ ions, and raise intensity of photoluminescence.
Description
Technical field
The present invention relates to optoelectronic thin-film material and preparation of devices and applied technical field.Particularly a kind of with the luminous method of plasma treatment raising silicone based crystal thin film.
Background technology
Along with silica-based microelectronic component size nanometer, ultra-largeization of integrated circuit; the interconnected delay of electronic loop will become " bottleneck " of microelectric technique development; seriously limit the speed of response of electronic device, can't satisfy the needs of information processing, transmission and storage terabiteization (Tb/s).Adopt optical interconnection will help improving system responses speed, cross interconnected density, information processing rate and accuracy reduce electromagnetic wave simultaneously and crosstalk energy loss.Realization photoelectricity is integrated, and primary task is the silica-based efficiently light source that finds with the microelectronic component compatibility.Silicon materials belong to indirect band structure, interband radiative recombination lifetime long (ms level), and the interband luminous efficiency is low, and body silicon electroluminescence internal quantum efficiency only is 10
-5～10
-4%, this electroluminescence and stimulated emission to research high-quantum efficiency, high modulation speed has proposed very big challenge.
Rare earth erbium ion Er
3+By
4I
13/2Extremely
4I
15/24f transition between the energy levels radiation wavelength be 1.54 μ m, be positioned at optical fiber lowest loss window, the successful Application of quartz optical fiber has promoted the development of erbium-doped fiber amplifier and fiber laser, becomes the important breakthrough of contemporary optical communication technique development.The er-doped silicon materials are then Er
3+Good optical property and ripe silicon technology combine, be an important directions of si-based light-emitting device research.Improve the radioluminescence efficient of Er in Si, must improve Er in the solubility of silicon and the optical activity of Er.The equilibrium state solubility very low (～10 of Er in Si
18/ cm
3), far below the solubility in the amorphous state silica fiber, so adopt the method for codope oxygen element usually, along with O concentration increases, the Er of doping tetrahedral interstice (T) from single crystalline Si forwards position, hexahedron gap (H) to, and solubility surpasses 10
20/ cm
3, optical activity also be improved [referring to B.Zheng, J.Michel, F.Y.G.Ren and K.C.Kimerling.Appl.Phys.Lett.64,2842 (1994) and M.B.Huang and X.T.Ren.Phys.Rev.B, 68,033203 (2003)].The another kind of Er that improves
3+The approach of luminous efficiency is to seek a kind of silica-base film material, makes Er be in the cation crystal case of low symmetry, thereby significantly improves Er
3+Doping content and transition oscillation intensity.H.Isshiki adopts rotation coating erbium chloride/ethanolic solution on the Si substrate, the method of quick high-temp oxidizing annealing obtains the Er-Si-O crystal film, the concentration of Er is up to 14at.%, [referring to H.Isshiki, M.J.A.De Dood, A.Polman and T.Kimura, Appl.Phys.Lett.85,4343 (2004)].Adopt the method for organic metal molecular beam epitaxy (MOMBE), with Er-O and two kinds of presomas of Si-O is the source, the concentration that high annealing also can obtain Er under Ar gas inert environments surpasses the Er-Si-O crystal film of 10at.% [referring to K.Masaki, H.Isshiki, and T.Kimura, Opt.Mater., 27,876 (2005)].For free electron Er
3+, the electric dipole transition of 4f energy inter-stage is abstinence, but crystalline field can make the Er of doping
3+The engery level cracking of ion has destroyed parity selection rule, thereby changes the wavelength and the intensity of spectrum.In the Er-Si-O crystal film, Er
3+Optical property show that it is in the typical ErO of silicic acid erbium compound
6In the octahedral structure [referring to H.Isshiki, A.Polman and T.Kimura, J.Lumi,, 102-103,819 (2003)].So, if pass through Er
3+The introducing of the local distortion of O and foreign atom on every side forms ErO
6Counterfeit octahedral structure can reduce Er so effectively
3+The symmetry of crystalline field on every side, thus Er improved
3+The 4f transition between energy level.
Summary of the invention
Inventor of the present invention thinks mix a certain amount of N element in the Er-Si-O crystal film, can effectively reduce Er
3+The symmetry of crystalline field improves Er on every side
3+The quantum luminous efficiency.Adopt ion to inject the method for N element, in crystal film, can produce a large amount of defectives, need long term annealing to eliminate.The N plasma treatment Er-Si-O crystal film that the present invention adopts plasma reinforced chemical vapour deposition (PECVD) equipment to produce makes Er
3+Intensity at 1.53 mu m luminous peaks significantly improves.Aspect the photoelectric device of preparation and silicon technology compatibility very big application prospect is being arranged through the silica-based Er-Si-O crystal film of plasma treatment, as the orthoron of silica-based light source and high-gain efficiently.The present invention with the preparation of a kind of erbium silica (Er-Si-O) crystal film and with plasma treatment improve its luminescent properties the preparation method of light-emitting film.
Described method is carried out according to following steps successively:
The first step prepares Er-Si-O colloidal sol by certain chemical dosage ratio
The raw material that adopts is the ErCl of purity 99.99%
36H
2O powder and chemical pure tetraethoxysilance Si (OC
2H
5)
4(TEOS), water and ethanol are as solvent.Preparation process is under the condition of room temperature or heating, measures tetraethoxysilance by chemical dose, adds the mixed solution H that contains water and ethanol again
2O/C
2H
5OH makes tetraethoxysilance, water and ethanol TEOS/H
2O/C
2H
5The OH volume ratio is 1: 1: 5, and magnetic agitation 30min～2h mixes solution, and makes the TEOS hydrolysis obtain network structure.Take by weighing ErCl by chemical dose
36H
2The O powder adds a certain amount of C
2H
5OH, magnetic agitation is joined 30min～1h, is made into ErCl
3Saturated solution.With ErCl
3Saturated solution add foregoing TEOS, H
2O, C
2H
5The OH mixed solution, magnetic agitation 2～4h mixes solution.
In second step, applying one deck Er-Si-O xerogel thin film through rotation on the processed conventionally silicon substrate.
Applying the described Er-Si-O colloidal sol of one deck first step through rotation on the processed conventionally silicon substrate, dry back forms the dried sol pellicle of Er-Si-O, and rotary speed is at 1000～4000r/min.The film that applies placed dry 30min～1h in 100～150 ℃ the baking oven, but place the airtight quartz ampoule of temperature control dry then, baking temperature is at 400～650 ℃, drying time 0.25～2h.Apply and once can obtain the thick Er-Si-O xerogel thin film of 0.05～0.5 μ m.For guaranteeing that the Er-Si-O xerogel thin film reaches final thickness, employing repeatedly repeats the method for second process steps, and its number of repetition is an overall film thickness with the long-pending of each acquisition film thickness.
In the 3rd step, high temperature sintering reaches the Er-Si-O xerogel thin film of gross thickness, and original position generates the Er-Si-O crystal film.
In airtight quartz ampoule reative cell, charge into flowing nitrogen or argon gas as protective gas, high temperature sintering Er-Si-O xerogel thin film, original position generates the Er-Si-O crystal film.1000～1300 ℃ of annealing temperatures, annealing time 10min～3h.
The 4th step, the silica-based Er-Si-O crystal film of N plasma treatment that adopts plasma reinforced chemical vapour deposition (PECVD) equipment to produce.
The Er-Si-O crystal film is placed capacitance coupling type ultra high vacuum PECVD system, adopt N
2, NH
3Perhaps N
2O is as the N plasma source, and gas flow is 10～200sccm.System reaches 1 * 10 in the build-up of luminance initial vacuum
-7～1 * 10
-5Pressure is 50～110mtor in the torr, plasma treatment procedure lumen, and underlayer temperature remains on 200～400 ℃, and radio-frequency power is 20～100W, and the N plasma treatment time is 30min～2.5h.
In the 5th step, the Er-Si-O crystal film that double annealing is plasma treated makes the fully diffusion in film of N element, reduces Er
3+Crystalline field symmetry around the ion improves photoluminescence intensity.
In airtight quartz ampoule reative cell, charge into mobile argon gas, 800～1300 ℃ of annealing temperatures, annealing time 10min～3h as protective gas.
Beneficial effect of the present invention is: the present invention has proposed new approaches for the silicon base luminescence film preparation, prepare simple, and technology and silicon device process compatible.Compared with the prior art, the erbium ion concentration in this class film surpasses 20at.%, improves at least 7 times through plasma treated film light photoluminescence intensity.This silica-based Er-Si-O crystal film has very big application prospect aspect photoelectric device, as the orthoron of silica-based light source and high-gain efficiently.
Description of drawings
For further specifying concrete technology contents of the present invention, below in conjunction with embodiment and accompanying drawing describes in detail as after, wherein:
Fig. 1 generates the microcell room temperature photoluminescence spectrum of Er-Si-O crystal film for the high temperature sintering original position.
Fig. 2 is the light at room temperature photoluminescence intensity comparison diagram of Er-Si-O crystal film before and after plasma treatment.
Fig. 3 is the flow chart that improves the luminous method of silicone based crystal thin film with plasma treatment.
Embodiment
Fig. 1, abscissa is a photoluminescence wavelength among the figure, and μ m gets in unit, and ordinate is a photoluminescence intensity, and arbitrary unit a.u. gets in unit.Adopt Ar
+Ion 514nm excites, and the spot size size diameter is about 5 μ m, adopts the InGaAs detector matrix of cooled with liquid nitrogen to survey.The resolution of whole test system is 1cm
-1(resolution is about 0.03nm near 1.53 mum wavelengths).Er
3+The fine structure of the feature glow peak of ion is represented with arrow on figure.1.53 mu m luminous strong peaks wherein, halfwidth (FWHM) be 7.5nm (～4meV).
Fig. 2, abscissa is a photoluminescence wavelength among the figure, and μ m gets in unit, and ordinate is a photoluminescence intensity, and arbitrary unit a.u. gets in unit.Adopt Ar
+Ion 488nm excites, and spot diameter is 1mm, adopts the Ge detector of cooled with liquid nitrogen to survey.The resolution 4nm of whole test system.Improve 7 times through the intensity of the crystal film after the N plasma treatment at 1.53 mu m luminous peaks.
The invention will be further described below in conjunction with embodiment:
Embodiment 1
Fig. 3 improves the luminous method of silicone based crystal thin film with plasma treatment, and step is as follows:
The first step prepares Er-Si-O colloidal sol by certain chemical dosage ratio
Preparation process is under 50 ℃ constant temperature, measures tetraethoxysilance 4.5ml by chemical dose, adds the mixed solution H that contains water and ethanol again
2O/C
2H
5OH 27ml (H wherein
2O 4.5ml, C
2H
5OH 22.5ml), magnetic agitation 1h mixes solution and makes the TEOS hydrolysis obtain network structure.Take by weighing ErCl by chemical dose
36H
2O powder 11.451g (0.03mol), the C of adding 40ml
2H
5OH, magnetic agitation is joined 30min, is made into ErCl
3Saturated solution.With ErCl
3Saturated solution add foregoing TEOS, H
2O, C
2H
5The OH mixed solution, magnetic agitation 4h mixes solution.
In second step, applying one deck Er-Si-O xerogel thin film through rotation on the processed conventionally silicon substrate.
Applying one deck Er-Si-O xerogel thin film through rotation on the processed conventionally silicon substrate, rotary speed is at 1500r/min.The film that applies placed dry 30min in 140 ℃ the baking oven, place then can temperature control airtight quartz ampoule dry, baking temperature is at 620 ℃, drying time 30min.Apply and once obtain the thick Er-Si-O xerogel thin film of 0.13 μ m.Repeat second process steps 6 times, finally obtain film thickness and be about 800nm.
In the 3rd step, high temperature sintering reaches the Er-Si-O xerogel thin film of gross thickness, and original position generates the Er-Si-O crystal film.
In airtight quartz ampoule reative cell, charge into the argon gas that flows as protective gas, under 1250 ℃ of temperature, annealing Er-Si-O xerogel thin film 20min, original position generates the Er-Si-O crystal film.
The 4th step, the silica-based Er-Si-O crystal film of N plasma treatment that adopts plasma reinforced chemical vapour deposition (PECVD) equipment to produce.
The Er-Si-O crystal film is placed capacitance coupling type ultra high vacuum PECVD system, adopt NH
3As the N plasma source, gas flow is 30sccm.System reaches 1 * 10 in the build-up of luminance initial vacuum
-5Pressure is 110mtor in the torr, plasma treatment procedure lumen, and underlayer temperature remains on 300 ℃, and radio-frequency power is 50W, and the N plasma treatment time is 1h.
In the 5th step, the Er-Si-O crystal film that double annealing is plasma treated makes the fully diffusion in film of N element, reduces Er
3+Crystalline field symmetry around the ion improves photoluminescence intensity.
In airtight quartz ampoule reative cell, charge into mobile argon gas, 1200 ℃ of annealing temperatures, annealing time 20min as protective gas.
The 6th step, performance test results.
Er-Si-O crystal film through above step preparation can observe Er in the microcell photoluminescence spectrum
3+The various feature glow peaks of ion are represented with arrow in Fig. 1.The fine structure of photoluminescence spectrum shows Er
3+Be to be in ErO
6In the octahedral structure; In addition, 1.53 mu m luminous peak widths (FWHM) be 7.5nm (～4meV), show Er
3+Residing environment is a crystal structure, and X light diffracting analysis has also confirmed behind the Er-Si-O film high annealing near silicic acid erbium Er
2SiO
5Crystal structure.Rutherford backscattering (RBS) result shows that the concentration of Er in film is about 21.5at.%.Improve 7 times through the intensity of the crystal film after the N plasma treatment at 1.53 mu m luminous peaks, and through double annealing but not having obvious variation through the luminous intensity of the crystal film of plasma treatment, this shows that plasma treatment introduces the luminous intensity that the N element can improve Er-Si-O really.
Claims (6)
1. one kind is improved the luminous method of silicone based crystal thin film with plasma treatment, and its step is as follows:
The first step prepares Er-Si-O colloidal sol by certain chemical dosage ratio;
Second step was applying the described Er-Si-O colloidal sol of one deck first step through rotation on the processed conventionally silicon substrate, and dry back forms the dried sol pellicle of Er-Si-O;
In the 3rd step, high temperature sintering reaches the Er-Si-O xerogel thin film of gross thickness, and original position generates the Er-Si-O crystal film;
The 4th step, the silica-based Er-Si-O crystal film of N plasma treatment that adopts plasma reinforced chemical vapour deposition (PECVD) equipment to produce;
In the 5th step, the Er-Si-O crystal film that double annealing is plasma treated makes the fully diffusion in film of N element, reduces Er
3+Crystalline field symmetry around the ion improves photoluminescence intensity.
According to claim 1 improve the luminous method of silicone based crystal thin film with plasma treatment, it is characterized in that,
The first step prepares Er-Si-O colloidal sol by certain chemical dosage ratio;
The raw material that adopts is the ErCl of purity 99.99%
3.6H
2O powder and chemical pure tetraethoxysilance Si (OC
2H
5)
4(TEOS), water and ethanol are as solvent, and preparation process is under the condition of room temperature or heating, measures tetraethoxysilance by chemical dose, add the mixed solution H that contains water and ethanol again
2O/C
2H
5OH makes tetraethoxysilance, water and ethanol TEOS/H
2O/C
2H
5The OH volume ratio is 1: 1: 5, and magnetic agitation 30min～2h mixes solution, and makes the TEOS hydrolysis obtain network structure, takes by weighing ErCl by chemical dose
3.6H
2The O powder adds a certain amount of C
2H
5OH, magnetic agitation is joined 30min～1h, is made into ErCl
3Saturated solution, with ErCl
3Saturated solution add foregoing TEOS, H
2O, C
2H
5The OH mixed solution, magnetic agitation 2～4h mixes solution.
According to claim 1 improve the luminous method of silicone based crystal thin film with plasma treatment,
It is characterized in that,
In second step, applying one deck Er-Si-O xerogel thin film through rotation on the processed conventionally silicon substrate;
Applying one deck Er-Si-O xerogel thin film through rotation on the processed conventionally silicon substrate, rotary speed is at 1000～4000r/min, the film that applies placed dry 30min～1h in 100～150 ℃ the baking oven, but place the airtight quartz ampoule of temperature control dry then, baking temperature is at 400～650 ℃, drying time 0.25～2h, apply and once can obtain the thick Er-Si-O xerogel thin film of 0.05～0.5 μ m, for guaranteeing that the Er-Si-O xerogel thin film reaches final thickness, adopt the method that repeatedly repeats second process steps, its number of repetition is overall film thickness with amassing of each acquisition film thickness.
According to claim 1 improve the luminous method of silicone based crystal thin film with plasma treatment, it is characterized in that,
In the 3rd step, high temperature sintering reaches the Er-Si-O xerogel thin film of gross thickness, and original position generates the Er-Si-O crystal film;
In airtight quartz ampoule reative cell, charge into flowing nitrogen or argon gas as protective gas, high temperature sintering Er-Si-O xerogel thin film, original position generates Er-Si-O crystal film, 1000～1300 ℃ of annealing temperatures, annealing time 10min～3h.
According to claim 1 improve the luminous method of silicone based crystal thin film with plasma treatment, it is characterized in that,
The 4th step, the silica-based Er-Si-O crystal film of N plasma treatment that adopts plasma reinforced chemical vapour deposition equipment to produce;
The Er-Si-O crystal film is placed capacitance coupling type ultra high vacuum PECVD system, adopt N
2, NH
3Perhaps N
2O is as the N plasma source, and gas flow is 10～200sccm, and system reaches 1 * 10 in the build-up of luminance initial vacuum
-7～1 * 10
-5Pressure is 50～110mtor in the torr, plasma treatment procedure lumen, and underlayer temperature remains on 200～400 ℃, and radio-frequency power is 20～100W, and the N plasma treatment time is 30min～2.5h.
According to claim 1 improve the luminous method of silicone based crystal thin film with plasma treatment, it is characterized in that,
In the 5th step, the Er-Si-O crystal film that double annealing is plasma treated makes the fully diffusion in film of N element, reduces Er
3+Crystalline field symmetry around the ion improves photoluminescence intensity;
In airtight quartz ampoule reative cell, charge into mobile argon gas, 800～1300 ℃ of annealing temperatures, annealing time 10min～3h as protective gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100906426A CN100385693C (en) | 2005-08-18 | 2005-08-18 | Method for raising radiation of silicone based crystal thin film by use of process of plasma |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100906426A CN100385693C (en) | 2005-08-18 | 2005-08-18 | Method for raising radiation of silicone based crystal thin film by use of process of plasma |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1917237A CN1917237A (en) | 2007-02-21 |
| CN100385693C true CN100385693C (en) | 2008-04-30 |
Family
ID=37738173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100906426A Expired - Fee Related CN100385693C (en) | 2005-08-18 | 2005-08-18 | Method for raising radiation of silicone based crystal thin film by use of process of plasma |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100385693C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103834916A (en) * | 2014-02-18 | 2014-06-04 | 中国科学院半导体研究所 | Processing method of erbium-doped optical amplifier material suitable for LED light source pump |
| CN114086151B (en) * | 2021-10-08 | 2022-09-23 | 湖南大学 | Growth method of micro-nano passive growth silicate material |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5646425A (en) * | 1992-08-31 | 1997-07-08 | International Business Machines Corporation | Supersaturated rare earth doped semiconductor layers by chemical vapor deposition |
| JP2002097589A (en) * | 2000-05-30 | 2002-04-02 | Creavis G Fuer Technol & Innov Mbh | Electrochemical cell for oxidizing organic compound and electrical contact oxidation method |
| CN1405902A (en) * | 2002-10-25 | 2003-03-26 | 华东师范大学 | Erbium-doped zinc oxide near-infrared light source |
| US6641751B1 (en) * | 1999-08-02 | 2003-11-04 | Tkd Corporation | Magnetic garnet single crystal and faraday rotator using the same |
| CN1513209A (en) * | 2001-06-01 | 2004-07-14 | Broad-spectrum terbium-containing garnet phosphors and white light source incorporating the same |
-
2005
- 2005-08-18 CN CNB2005100906426A patent/CN100385693C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5646425A (en) * | 1992-08-31 | 1997-07-08 | International Business Machines Corporation | Supersaturated rare earth doped semiconductor layers by chemical vapor deposition |
| US6641751B1 (en) * | 1999-08-02 | 2003-11-04 | Tkd Corporation | Magnetic garnet single crystal and faraday rotator using the same |
| JP2002097589A (en) * | 2000-05-30 | 2002-04-02 | Creavis G Fuer Technol & Innov Mbh | Electrochemical cell for oxidizing organic compound and electrical contact oxidation method |
| CN1513209A (en) * | 2001-06-01 | 2004-07-14 | Broad-spectrum terbium-containing garnet phosphors and white light source incorporating the same | |
| CN1405902A (en) * | 2002-10-25 | 2003-03-26 | 华东师范大学 | Erbium-doped zinc oxide near-infrared light source |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1917237A (en) | 2007-02-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Van den Hoven et al. | Erbium in oxygen‐doped silicon: Optical excitation | |
| US20070012907A1 (en) | Doped Semiconductor Nanocrystal Layers And Preparation Thereof | |
| US7297642B2 (en) | Sputter-deposited rare earth element-doped silicon oxide film with silicon nanocrystals for electroluminescence applications | |
| Wang et al. | Low‐Dimensional Phase Regulation to Restrain Non‐Radiative Recombination for Sky‐Blue Perovskite LEDs with EQE Exceeding 15% | |
| KR20030065009A (en) | Thin film for optical applications, light-emitting structure using the same and the fabrication method thereof | |
| TW201027780A (en) | Photoelectric conversion device and method for manufacturing the same | |
| Li et al. | Realization of 1.54‐µm Light‐Emitting Diodes Based on Er3+/Yb3+ Co‐Doped CsPbCl3 Films | |
| Dumont et al. | Down-shifting Si-based layer for Si solar applications | |
| Xu et al. | Electroluminescent polycrystalline Er-doped Lu3Al5O12 nanofilms fabricated by atomic layer deposition on silicon | |
| CN100385693C (en) | Method for raising radiation of silicone based crystal thin film by use of process of plasma | |
| Chang et al. | Light emitting mechanism of porous silicon | |
| Ma et al. | Crystallization and electroluminescence performance of the Er-doped polycrystalline Gd3Ga5O12 nanofilms fabricated by atomic layer deposition on silicon | |
| CN103397302A (en) | Preparation method of up-conversion luminescence Er / Yb co-doped TiO2 thin film | |
| Moadhen et al. | Photoluminescence properties of europium-doped porous silicon nanocomposites | |
| CN109809698B (en) | Perovskite quantum dot glass-based light amplification material and preparation method and application thereof | |
| Ma et al. | Atomic layer deposition and electroluminescence of Er-doped polycrystalline Lu3Ga5O12 nanofilms for silicon-based optoelectronics | |
| Scarangella et al. | Bismuth doping of silicon compatible thin films for telecommunications and visible light emitting devices | |
| CN101170847A (en) | Silicon base lanthanon adulterated EL part | |
| KR100615430B1 (en) | Silicon nitride thin film for optical device and fabrication method thereof | |
| CN100496177C (en) | Electroluminescent device containing silicon based rear-earth-doped luminous material and preparation method thereof | |
| Tessler et al. | Optimization of the as-deposited 1.54 μm photoluminescence intensity in a-SiOx: H | |
| Bondarenko et al. | Porous silicon as low-dimensional host material for erbium-doped structures | |
| Bondarenko et al. | Formation and luminescent properties of oxidized porous silicon doped with erbium by electrochemical procedure | |
| Gelloz | Luminescent properties of porous silicon | |
| Andreev et al. | Influence of thermal annealing on the intensity of the 1.54-µm photoluminescence band in erbium-doped amorphous hydrogenated silicon |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |