CN100386472C - 作为在半导体器件中的层内和层间绝缘体的超低介电常数材料及其制造方法、以及包含该材料的电子器件 - Google Patents
作为在半导体器件中的层内和层间绝缘体的超低介电常数材料及其制造方法、以及包含该材料的电子器件 Download PDFInfo
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- CN100386472C CN100386472C CNB018204090A CN01820409A CN100386472C CN 100386472 C CN100386472 C CN 100386472C CN B018204090 A CNB018204090 A CN B018204090A CN 01820409 A CN01820409 A CN 01820409A CN 100386472 C CN100386472 C CN 100386472C
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31633—Deposition of carbon doped silicon oxide, e.g. SiOC
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- H—ELECTRICITY
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- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
- H01L23/53295—Stacked insulating layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
材料 | CH/SiO(%) | SiH/SiO(%) | SiCH/SiO(%) |
SiCOH | 2 | 7 | 5 |
超低k | 10 | 0 | 4 |
Claims (98)
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US24316900P | 2000-10-25 | 2000-10-25 | |
US60/243,169 | 2000-10-25 | ||
US09/769,089 US6441491B1 (en) | 2000-10-25 | 2001-01-25 | Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device containing the same |
US09/769,089 | 2001-01-25 | ||
US09/938,949 | 2001-08-24 | ||
US09/938,949 US6756323B2 (en) | 2001-01-25 | 2001-08-24 | Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device |
PCT/US2001/050830 WO2002043119A2 (en) | 2000-10-25 | 2001-10-25 | An ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device, a method for fabricating the same, and an electronic device containing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1479804A CN1479804A (zh) | 2004-03-03 |
CN100386472C true CN100386472C (zh) | 2008-05-07 |
Family
ID=27399636
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018204090A Expired - Fee Related CN100386472C (zh) | 2000-10-25 | 2001-10-25 | 作为在半导体器件中的层内和层间绝缘体的超低介电常数材料及其制造方法、以及包含该材料的电子器件 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6770573B2 (zh) |
EP (1) | EP1352107A2 (zh) |
JP (2) | JP4272424B2 (zh) |
KR (1) | KR100586133B1 (zh) |
CN (1) | CN100386472C (zh) |
SG (2) | SG137695A1 (zh) |
WO (1) | WO2002043119A2 (zh) |
Families Citing this family (49)
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US20030070451A1 (en) * | 2001-10-11 | 2003-04-17 | Luc Ouellet | Method of reducing stress-induced mechanical problems in optical components |
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US6917108B2 (en) * | 2002-11-14 | 2005-07-12 | International Business Machines Corporation | Reliable low-k interconnect structure with hybrid dielectric |
US7011890B2 (en) | 2003-03-03 | 2006-03-14 | Applied Materials Inc. | Modulated/composited CVD low-k films with improved mechanical and electrical properties for nanoelectronic devices |
TWI240959B (en) * | 2003-03-04 | 2005-10-01 | Air Prod & Chem | Mechanical enhancement of dense and porous organosilicate materials by UV exposure |
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US7288292B2 (en) * | 2003-03-18 | 2007-10-30 | International Business Machines Corporation | Ultra low k (ULK) SiCOH film and method |
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JP2007258403A (ja) * | 2006-03-23 | 2007-10-04 | United Microelectronics Corp | 多孔性低誘電率薄膜及びその製作方法 |
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JP5165914B2 (ja) * | 2007-03-30 | 2013-03-21 | 三井化学株式会社 | 多孔質シリカフィルム及びその製造方法 |
CN104746045B (zh) * | 2013-12-26 | 2018-03-06 | 北京北方华创微电子装备有限公司 | 化学气相沉积方法和装置 |
US10361137B2 (en) * | 2017-07-31 | 2019-07-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
CN109585264B (zh) * | 2018-08-26 | 2020-12-22 | 合肥安德科铭半导体科技有限公司 | 一种氮化硅薄膜的可流动化学气相沉积方法 |
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2001
- 2001-10-25 SG SG200504912-7A patent/SG137695A1/en unknown
- 2001-10-25 WO PCT/US2001/050830 patent/WO2002043119A2/en active IP Right Grant
- 2001-10-25 SG SG200504909-3A patent/SG137694A1/en unknown
- 2001-10-25 EP EP01987525A patent/EP1352107A2/en not_active Withdrawn
- 2001-10-25 KR KR1020037005450A patent/KR100586133B1/ko not_active IP Right Cessation
- 2001-10-25 JP JP2002544765A patent/JP4272424B2/ja not_active Expired - Fee Related
- 2001-10-25 CN CNB018204090A patent/CN100386472C/zh not_active Expired - Fee Related
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2003
- 2003-01-10 US US10/340,000 patent/US6770573B2/en not_active Expired - Lifetime
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2006
- 2006-10-25 JP JP2006290010A patent/JP4410783B2/ja not_active Expired - Fee Related
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EP1352107A2 (en) | 2003-10-15 |
JP2004515057A (ja) | 2004-05-20 |
CN1479804A (zh) | 2004-03-03 |
WO2002043119A2 (en) | 2002-05-30 |
SG137694A1 (en) | 2007-12-28 |
US6770573B2 (en) | 2004-08-03 |
KR100586133B1 (ko) | 2006-06-07 |
KR20030044014A (ko) | 2003-06-02 |
WO2002043119A3 (en) | 2003-03-13 |
US20030139062A1 (en) | 2003-07-24 |
JP4410783B2 (ja) | 2010-02-03 |
JP4272424B2 (ja) | 2009-06-03 |
SG137695A1 (en) | 2007-12-28 |
JP2007036291A (ja) | 2007-02-08 |
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