CN100386857C - 制备用于电连接的导电座的方法及形成的导电座 - Google Patents

制备用于电连接的导电座的方法及形成的导电座 Download PDF

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Publication number
CN100386857C
CN100386857C CNB011046791A CN01104679A CN100386857C CN 100386857 C CN100386857 C CN 100386857C CN B011046791 A CNB011046791 A CN B011046791A CN 01104679 A CN01104679 A CN 01104679A CN 100386857 C CN100386857 C CN 100386857C
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seating face
layer
copper
electrically connected
protective layer
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CN1311526A (zh
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卡洛斯·J·桑布塞蒂
丹尼尔·C·艾德尔斯坦
约翰·G·高德罗
朱迪思·M·鲁宾诺
乔治·沃克
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Tessera Inc
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International Business Machines Corp
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Abstract

提供一种制备用于电连接的具有优良的扩散阻挡层与附着性能的铜座表面的方法。首先提供经过酸溶液清洁的铜座表面，然后在铜座表面上沉积含磷或含硼合金的保护层，接着在保护层上面沉积稀有金属的附着层。或者，可在化学沉积保护层之前在铜导电表面与保护层之间沉积一层Pd形核层。或者，可通过无电镀Au沉积处理在附着层的上面沉积一层稀有金属层。本发明还公开一种电结构，它包括形成在附着层上并含有同附着层形成整体的电连接即引线键合或钎焊凸块的导电座。

Description

制备用于电连接的导电座的方法及形成的导电座
技术领域
本发明一般地涉及一个形成用于电连接的导电座的方法及形成的导电座，更详细地，涉及一个形成与引线键合或钎焊凸块电连接的铜导电座表面的方法及形成的铜导电座。
背景技术
在制造半导体器件时，在最后处理步骤中，可把一块集成电路(IC)芯片装入一个封装件。然后可把装配好的封装件连接到一块作为大电路一部分的印刷电路板。为建立与集成电路芯片的电气联系，可使用引线键合处理或钎焊凸块处理把IC芯片上大量的键合座与外部电路连接。
在一块典型的IC芯片中，有效电路元件例如晶体管、电阻等布置在芯片的中心部分即有效区域内，而键合座布置在围绕有效区域的周边，使在后继的焊接处理期间不会损坏有效电路元件。当施行引线键合处理时，此处理要求通过利用超声波能将连线与座熔化在一起从而把金线或铝线焊接在芯片的键合座上。在形成焊接后，将线从引线键合座拉开。拉线处理常导致称为键合座剥离的缺陷。出现这种缺陷的原因是由于在把金线附加到键合座的处理期间，一个高强度的应力施加在键合座上，即一个相对较大较重的键合施加在可能与下层附着不好的几个层上。
例如，影响层间附着的一个因素是为防止在后继的高温处理期间铝扩散到下面的导电层内而通常使用一个由TiN形成的扩散阻挡层。使用的扩散阻挡层，即TiN，TiW或其它适用合金，对下面键合座内的氧化层不具有强的附着力。这是导致键合座剥离缺陷的一个原因。其它原因，例如高焊接应力与高强拉力，对剥离问题进一步产生影响。大部分剥离问题发生在硅导电层(Sili conductive layer)与绝缘(即SiO2)层之间的界面。
除了使用铝线或金线形成电连接的引线键合处理之外，还可使用钎焊凸块(也称作“C4”)处理把芯片附加到封装件上，用于将电子信号从键合座传输至二级封装或一块电路板。此钎焊凸块处理由IBM公司较独占地使用，而大部分IC产业使用引线键合技术。在常规的引线键合工艺中，芯片表面上的键合座由容易借助标准的高度自动化的工具使它自身与铝线或金线连接的铝形成。然而，由于最近引入铜技术，即一块芯片线路后端(BEOL)的所有布线都为铜线，钎焊凸块和铝或金引线键合均在铜键合座上直接处理，或通过在铜座上构图附加一个合适的铝帽且在铝与铜之间有一个合适的薄膜阻挡层金属以防止互相扩散而进行(即在此引入作为参考的IBM专利申请S/N09/314003，标题为“Robust Interconnect structure”，1999年5月19日提出)。
在铜座上直接引线键合不容易进行，这是由于在纯铜上由铝线或金线形成的引线键合易受腐蚀、氧化与热扩散问题的影响。对铜座的直接引线键合是不可靠的且容易失败。铝座帽技术使成本显著提高，因为它除沉积之外还增加光刻图案(掩模)与蚀刻周期。因此，提供一个可用于IC产业中的对铜键合座即铜芯片上键合座引线键合的无掩模的解决方法，具有重大的商业意义。
发明内容
因此，本发明的一个目的是提供一个没有常规方法的缺陷与缺点的制备用于电连接的导电座表面的方法。
本发明的另一个目的是提供制备通过引线键合处理或钎焊凸块处理以用于电连接的导电座表面的方法。
本发明的再一个目的是提供一个通过首先在铜座表面上形成一个保护层然后形成一个附着层、二者的完成都不要求附加的光掩模与蚀刻步骤的制备用于电连接的铜座表面的方法。(在此引入作为参考，IBM专利申请S/N09/311973，标题为“Self-Aligned Corrosion Stop forCopper C4 and Wirebond”，1999年5月14日提出)。
本发明的又一个目的是提供一个首先在铜座表面上沉积一层含磷或含硼合金的制备一个用于电连接的铜座表面的方法。
本发明的再一个目的是提供一个通过在原先形成在铜座表面的保护层上沉积一层贵金属的附着层的制备用于电连接的铜座表面的方法。
本发明还有一个目的是提供一个制备用于电连接的铜座表面的方法，它还包括一个在沉积保护层之前在铜座表面上沉积一层贵金属的形核层的步骤。
本发明的再一个目的是提供一个在其上面形成导电连接的导电座，它包括一个铜座表面，一个在铜座表面上的保护层，与一个在保护层上面的用于提供同引线键合或钎焊凸块电连接的附着层。
本发明的再一个目的是提供一个提供电连接的电结构，它包括一个铜座表面，一个在铜座表面上的保护层，一个在保护层上面的附着层，与一个同附着层形成整体的引线键合或钎焊凸块的电连接。
根据本发明，提供一个用于制备与引线键合或钎焊凸块电连接用的铜座表面的方法与由此方法形成的器件。
在一个优选实施例中，可通过首先提供一个铜座表面，然后在铜座表面上沉积一个含磷或含硼合金的保护层，与在保护层上面沉积一个贵金属的附着层的操作步骤，施行制备用于电连接的铜座表面的方法。
制备一个用于电连接的铜座表面的方法还包括在沉积保护层之前在铜座表面上沉积一层贵金属形核层的步骤。此方法还可包括在酸溶液中清洁铜座表面与在铜座表面上沉积一层贵金属形核层的步骤。该形核层可由钯或钯毫微粒子(nanoparticles)沉积形成。虽然也可用例如钌与铼等其它贵金属毫微粒子，但最常用的是钯毫微粒子。此方法还可包括在沉积形核层之后用水清洗铜座表面的步骤，或通过无电镀技术沉积保护层的步骤。沉积保护层步骤还可包含使铜座表面同无电镀槽内的包括钴离子、钨酸盐离子、硼酸、柠檬酸盐离子、醋酸铅与次磷酸盐的加热缓冲溶液接触，然后同包含镍离子、柠檬酸盐离子、硼酸、次磷酸钠或二甲氨基硼化氢的加热无电镀溶液接触的步骤。
在制备一个用于电连接的铜座表面的方法中，附着层可由从包括Au、Pt、Pd与Ag的组中选择的一种金属形成。附着层可通过将IC浸入在Au浸没溶液内形成。附着层可由贵金属形成至厚度在约500
Figure C0110467900101
与约4000
Figure C0110467900102
之间。含磷或含硼合金可从包括Ni-P、Co-P、Co-W-P、Co-Sn-P、Ni-W-P、Co-B、Ni-B、Co-Sn-B、Co-W-B和Ni-W-B的组中选择。保护层可由含Co或含Ni的合金形成至厚度在约1000
Figure C0110467900103
与约10000
Figure C0110467900104
之间。此方法还可包括通过无电镀膜技术在附着层上面沉积一个贵金属层使贵金属层的总厚度在约2000
Figure C0110467900105
与约12000
Figure C0110467900106
之间的步骤。保护层还可包括每个为含磷或含硼合金的2个独立的合金层，例如，保护层可以是Co-W-P与Ni-P的复合层。保护层还可以是Ni-P或Co-W-P，而附着层可以是Au。保护层还可以是Ni-P，而附着层可以是浸没Au与无电镀Pd。此方法还可包括在硅晶片、硅-锗晶片或绝缘硅片的衬底上形成铜座的步骤。
制备一个用于电连接的铜座表面的方法还可包括把坐落铜座表面的晶片切割成各个IC芯片；并在铜座表面上形成引线键合的步骤。此方法还可包括把坐落铜座表面的晶片切割成各IC芯片，并在铜座表面上形成用于电连接的钎焊凸块的步骤。形成的钎焊凸块可以是通过蒸发、电镀、网板印刷或注塑技术形成的Pb/Sn焊料球。
本发明还涉及在其上形成电连接的导电座，它包括一个铜座表面，一个在铜座表面上的含磷或含硼合金的保护层，与一个在保护层上面的贵金属的附着层，其中附着层提供与引线键合或钎焊凸块的电连接。
在其上形成电连接的导电座还可包括一个位于铜座表面与保护层之间的贵金属形核层。导电座还可包括一个位于铜座表面与保护层之间的由钯、钌或铼的毫微粒子形成的形核层。保护层可由从Ni-P、Co-P、Co-W-P、Co-Sn-P、Ni-W-P、Co-B、Ni-B、Co-Sn-B、Co-W-B和Ni-W-B中选择的一种材料形成。保护层的厚度可在约1000
Figure C0110467900111
与约10000
Figure C0110467900112
之间，最好为约3000
Figure C0110467900113
。导电座还可包括一个在附着层上面的贵金属层，形成一个贵金属层组合厚度在约2000
Figure C0110467900114
与约12000
Figure C0110467900115
之间，最好在约9000
Figure C0110467900116
。保护层还可包括每个为含磷合金或含硼合金的紧密结合在一起的2个独立层。这2个独立层可以是Co-W-P与Ni-P。附着层可以是选自Au，Pt，Pd与Ag的层。附着层的厚度可在约500
Figure C0110467900117
与约4000
Figure C0110467900118
之间。保护层可以是Ni-P或Co-W-P，而附着层可以是Au。保护层可以是Ni-P，而附着层可以是浸没Au与无电镀Pd。导电座可以在一块硅晶片、硅-锗晶片或绝缘硅片的衬底上形成。电连接可以由引线键合或钎焊凸块形成。
本发明还涉及用于提供电连接的电结构，它包括一个铜座表面，一个在铜座表面上的含磷或含硼合金的保护层，一个在保护层上面的贵金属的附着层，与一个同附着层形成整体的电连接。电连接可以是引线键合或钎焊凸块。
用于提供电连接的电结构还可包括一个在铜座表面与保护层之间的贵金属形核层，此形核层可由钯、钌或铼的毫微粒子形成。附着层可由从Au、Pt、Pd与Ag中选择的一种金属形成。保护层可由从包括Ni-P、Co-P、Co-W-P、Co-Sn-P、Ni-W-P、Co-B、Ni-B、Co-Sn-B、Co-W-B与Ni-W-B的组中选择的一种合金形成。该电结构还可包括一个沉积在附着层上面的贵金属层，使贵金属层的总厚度在约2000
Figure C0110467900119
与约12000
Figure C01104679001110
之间。电结构还可包括一个在其上面坐落铜座的硅晶片、硅-锗晶片或绝缘硅片的衬底。
附图说明
本发明的这些以及其它的目的、特征及优点将通过对说明书与附图的考察而变得明白，其中：
图1是一个本发明的带有连接在顶部上的引线键合的铜导电座的放大剖视图，与
图2是一个本发明的带有形成在顶部上的钎焊凸块的铜导电座的放大剖视图。
具体实施方式
本发明公开一种制备通过引线键合或钎焊凸块形成电连接的铜座表面的方法。本发明还公开一种在其上形成电连接的铜导电座，与一种用于提供一个包括在铜座表面上形成的引线键合或钎焊凸块的电连接的电结构。
在制备用于电连接的铜座表面的方法中，首先提供一个铜座表面，然后在此铜座表面上沉积一个含磷或含硼合金的保护层，接着在保护层上沉积一个用于与引线键合或钎焊凸块进行电连接的贵金属附着层。此方法还可包括在沉积保护层之前在铜座表面上首先沉积一个贵金属例如钯的形核层的步骤。在沉积形核层之前，可用一种酸溶液清洁铜座表面。保护层由含磷或含硼合金或Ni-P、Co-W-P形成。保护层形成至厚度在约1000与约10000
Figure C0110467900122
之间，最好在约3000
Figure C0110467900123
与约7000
Figure C0110467900124
之间。
本发明提供一个通过自对准、选择性技术允许在电子芯片上直接进行铜座引线键合的方法，它首先在铜座上沉积一个复合的金属阻挡层。阻挡层保护铜表面免于扩散与腐蚀，同时提供一个可靠的引线键合能力。这里公开的方法可用于在铜晶片上沉积阻挡金属，进行切割，并以令人满意的结果检测引线键合质量。
本发明通过顺序地与选择性地(无掩模的)在铜表面上沉积一层使能同时保护铜座表面与保证可靠的引线键合性能的阻挡金属，从而得到铜座上的引线键合或钎焊凸块。因而本发明排除了一种不然需要通过蒸发或溅射在铜座上沉积一个铝层的可掩模的替代方法，即一个昂贵的替代方法。本发明的阻挡层可应用选择性的且自对准的无电镀技术来沉积。因而本发明不要求任何光处理步骤，与选择性(无掩模的)光刻步骤，或昂贵的掩模对准程序或昂贵的金属蚀刻步骤，例如铝的RIE。由本发明的新颖方法提供的铜/阻挡层的引线键合或钎焊凸块提供许多处理方面的优点，包括对铜的优良附着，防止在热处理条件下铜原子通过阻挡层的扩散，保护铜表面免于腐蚀，及在阻挡层的最后顶层上沉积一层贵金属，使附加在铜座上的铝线或金线能牢固附着并具有优良的拉力强度。
在本发明的新颖方法中，如图1中所示，在铜芯片处理的线路后端(BEOL)的铜座12的表面14首先通过一系列化学步骤加以调整。例如，化学沉积一个第一铜扩散阻挡层16。此第一扩散阻挡层16被沉积一层合金材料例如Ni-P、Co-W-P、Co-Sn-P、Ni-W-P、Co-B、Ni-B、Co-Sn-B、Co-W-B与Ni-W-B等含磷或含硼的合金。此第一扩散阻挡层的合适厚度可在约1000
Figure C0110467900131
与约10000之间，最好在约3000
Figure C0110467900133
与约7000
Figure C0110467900134
之间。在本文上下文中，词“约”表示一值在离给定平均值±10％的范围内。
在沉积第一扩散阻挡层16之后，使用一种Au浸没溶液通过浸没沉积技术在扩散阻挡层16的上面沉积一个第二层18。此第二层18的合适厚度在约500
Figure C0110467900135
与约4000之间，最好在约1000
Figure C0110467900137
与约2000
Figure C0110467900138
之间。第一扩散阻挡层16即保护层，与第二附着层18作为一个双层20沉积，提供铜保护与一个可靠的引线键合结构。或者，可通过无电Au沉积技术在第二层18上施加一个第三层(在图1中未表示)，使最后的Au层厚度增加至约4000
Figure C0110467900139
与约10000
Figure C01104679001310
之间，最好在约4000与约6000
Figure C01104679001312
之间。第三Au层的用途是使具有较容易的引线键合参数与较高的引线键合附着强度。
本发明的扩散阻挡层16还可以按下述实例形成：
例A
在本例中，形成一个Cu/Co-W-P(1000
Figure C01104679001313
)/Ni-P(5000
Figure C01104679001314
)/浸没Au(2000
Figure C01104679001315
)/无电Au(3000-5000
Figure C01104679001316
)的多层堆叠。也可以硼代替磷而形成对应的扩散阻挡结构。
例B
在本例中，利用一种单一结构，其表示为Cu/Ni-P(5000
Figure C01104679001317
)/浸没Au(1000-2000
Figure C0110467900141
)且有Cu/Co-Wo-P(5000
Figure C0110467900142
)/浸没Au(2000)。也可以硼代替磷形成相应的引线键合结构。
例C
在本例中，提供一个Cu/Ni-P(5000
Figure C0110467900144
)/浸没Au(1000-2000
Figure C0110467900145
)/无电Pd的多层堆叠。也可使用以硼代替磷的相应的引线键合结构。
在实施本发明的新颖方法时，首先处理包括多层铜接触座的铜晶片，这通过浸入稀硫酸溶液以清除铜表面的氧化物的清洁步骤进行。然后通过浸入钯离子溶液激活铜晶片使在铜表面上产生许多Pd金属核。之后晶片在柠檬酸钠或EDTA溶液中清洗以便从衬底与晶片表面上的座间区域上清除过量的Pd核。接着把晶片浸入本发明的无电镀槽从而在铜表面上沉积一层Co-P、Ni-P、Co-W-P、Co-Sn-P与以硼代替磷的相应合金，在每种情况下使用特定的槽池成分，其依据沉积在铜表面上的合金类型可能是不同的与独特的。在彻底的清洗操作之后，接着把晶片暴露于可购买到的Au浸没溶液。最后，依据需要的结构，可在浸没Au层上施加一层额外的与最后的厚度在约3000
Figure C0110467900146
与5000
Figure C0110467900147
之间的无电镀Au层，与/或选择地，在浸没Au层上加上一层同样厚的Pd层。然后在多层堆叠的上面形成一个成功的引线键合30或钎焊凸块40如图1与图2中所示。
本发明的无电镀方法可通过首先在无电镀槽内的加热缓冲溶液中浸没并激活(用Pd离子)铜晶片表面来进行，槽内含有钴离子、硼酸、柠檬酸盐离子、ppm级浓度的醋酸铅与次磷酸盐。接着铜座表面覆盖一层厚度为1000-2000
Figure C0110467900148
的Co-P附着层，跟着用水彻底漂洗。然后把晶片表面浸入不同的加热无电镀溶液，其包括镍离子、柠檬酸盐离子、硼酸与次磷酸钠或二甲氨基硼化氢，其中在铜上沉积一层厚度在约5000
Figure C0110467900149
与约7000
Figure C01104679001410
之间的NiP或NiB，取决于使用的槽，之后用水彻底漂洗。在最后的沉积步骤中，将晶片表面浸入在可购买到的Au浸没槽内使在无电镀铜座表面14上沉积一个新的厚度在约1000
Figure C01104679001411
与约2000
Figure C01104679001412
之间的Au层。
如图2中所示，通过蒸发、电镀、网板印刷或注塑技术把一个例如Pb/Sn焊接材料的钎焊凸块40沉积在最外的Au层18的上面。
虽然本发明以说明性的方式作了描述，但应当理解所使用的术语应考虑为描述性词语而非限制性词语。
另外，虽然本发明已借助最佳实施例与替代实施例作了描述，但应当懂得本领域的技术人员将容易地把这些教导应用于本发明的其它可能的变化。
本发明的要求独占权或特许权的具体化体现确定于权利要求书中。

Claims (42)

1.一种制备用于电连接的铜座表面的方法，包括步骤：
提供铜座表面；
在铜座表面上选择地沉积一个含磷或含硼合金的保护层；
在所述保护层上面选择地沉积一个贵金属的附着层；以及
在沉积保护层之前在铜座表面上选择性沉积一个贵金属的形核层的步骤。
2.根据权利要求1的制备用于电连接的铜座表面的方法，还包括步骤：
在一种酸溶液中清洁铜座表面；与
在铜座表面上选择性沉积一个贵金属的形核层。
3.根据权利要求1的制备用于电连接的铜座表面的方法，其中所述形核层由钯沉积。
4.根据权利要求2的制备用于电连接的铜座表面的方法，还包括在沉积所述形核层之后用水清洗铜座表面的步骤。
5.根据权利要求1的制备用于电连接的铜座层的方法，还包括通过无电镀技术沉积所述保护层的步骤。
6.根据权利要求1的制备用于电连接的铜座表面的方法，其中所述沉积一个保护层的步骤还包括步骤：
将所述铜座表面与一个无电镀槽内的加热缓冲溶液接触，该无电镀槽含有钴离子、硼酸、柠檬酸盐离子、醋酸铅与次磷酸盐；与
将所述铜座表面与加热无电镀溶液接触，该溶液含有镍离子、柠檬酸盐离子、硼酸、次磷酸钠或二甲氨基硼化氢。
7.根据权利要求1的制备用于电连接的铜座表面的方法，其中所述附着层由从包括Au、Pt、Pd与Ag的组中选择的一种金属形成。
8.根据权利要求1的制备用于电连接的铜座表面的方法，其中所述附着层通过把晶片浸入Au浸没溶液形成。
9.根据权利要求1的制备用于电连接的铜座表面的方法，其中所述附着层由一种贵金属形成至厚度在约500
Figure C011046790003C1
与约4000
Figure C011046790003C2
之间。
10.根据权利要求1的制备用于电连接的铜座表面的方法，其中所述含磷或含硼的合金从包括Ni-P、Co-P、Co-W-P、Co-Sn-P、Ni-W-P、Co-B、Ni-B、Co-Sn-B、Co-W-B与Ni-W-B的组中选择。
11.根据权利要求1的制备用于电连接的铜座表面的方法，其中所述保护层由一种含磷或含硼的合金形成至厚度在约1000
Figure C011046790003C3
与约10000
Figure C011046790003C4
之间。
12.根据权利要求1的制备用于电连接的铜座表面的方法，还包括通过无电镀技术在所述附着层的上面沉积贵金属层使贵金属层的总厚度在约2000
Figure C011046790003C5
与约12000
Figure C011046790003C6
之间的步骤。
13.根据权利要求1的制备用于电连接的铜座表面的方法，其中所述保护层包括每个为含磷或含硼合金的2个独立层。
14.根据权利要求1的制备用于电连接的铜座表面的方法，其中所述保护层为Co-W-P与Ni-P的复合层，所述附着层为Au。
15.根据权利要求1的制备用于电连接的铜座表面的方法，其中所述保护层为Ni-P或Co-W-P，并且所述附着层为Au。
16.根据权利要求1的制备用于电连接的铜座表面的方法，其中所述保护层为Ni-P，并且所述附着层为浸没Au与无电镀Pd。
17.根据权利要求1的制备用于电连接的铜座表面的方法，还包括沉积许多Pd毫微粒子用作所述形核层的步骤。
18.根据权利要求1的制备用于电连接的铜座表面的方法，其中所述铜座表面在从包括硅晶片、硅-锗晶片与绝缘硅片的组中选择的衬底上提供。
19.根据权利要求1的制备用于电连接的铜座表面的方法还包括步骤：
将铜座表面所坐落的晶片切割成各个IC芯片；与
在铜座表面上形成引线键合。
20.根据权利要求1的制备用于电连接的铜座表面的方法还包括步骤：
将铜座表面所坐落的晶片切割成许多IC芯片；与
在所述铜座表面上形成用于进行电连接的钎焊凸块。
21.根据权利要求20的制备用于电连接的铜座表面的方法，其中所述形成的钎焊凸块为应用网板印刷或注塑技术形成的Pb/Sn焊料球。
22.一种导电座，在导电座上形成有电连接，该导电座包括：
一个铜座表面；
一个在铜座表面上的含磷或含硼合金的保护层；
一个在保护层上面的贵金属的附着层，所述附着层提供与引线键合或钎焊凸块的电连接；以及
一个位于所述铜座表面与所述保护层之间的贵金属的形核层。
23.根据权利要求22的导电座，还包括一个位于所述铜座表面与所述保护层之间的钯毫微粒子的形核层。
24.根据权利要求22的导电座，其中所述保护层由从包括Ni-P、Co-P、Co-W-P、Co-Sn-P、Ni-W-P、Co-B、Ni-B、Co-Sn-B、Co-W-B与Ni-W-B的组中选择的材料形成。
25.根据权利要求22的导电座，其中所述含磷或含硼金属的保护层的厚度在约1000与约10000
Figure C011046790004C2
之间。
26.根据权利要求22的导电座，还包括一个在所述附着层上面的贵金属层，形成一个在约2000
Figure C011046790004C3
与约12000
Figure C011046790004C4
之间的贵金属层组合厚度。
27.根据权利要求22的导电座，其中所述保护层还包括每个为含磷或含硼合金的紧密结合在一起的2个独立层。
28.根据权利要求27的导电座，其中所述2个独立层为Co-W-P与Ni-P。
29.根据权利要求22的导电座，其中所述附着层是由从包括Au，Pt，Pd与Ag的组中选择的层。
30.根据权利要求23的导电座，其中所述附着层的厚度在约500
Figure C011046790004C5
与约4000之间。
31.根据权利要求23的导电座，其中所述保护层为Ni-P或Co-W-P，并且所述附着层为Au。
32.根据权利要求23的导电座，其中所述保护层为Ni-P，并且所述附着层为浸没Au与无电镀Pd。
33.根据权利要求23的导电座，其中所述导电座在一个硅晶片、硅-锗晶片或绝缘硅片的衬底上形成。
34.根据权利要求23的导电座，其中所述电连接由引线键合形成。
35.根据权利要求23的导电座，其中所述电连接由钎焊凸块形成。
36.一种用于提供电连接的电结构，包括：
一个铜座表面；
一个在铜座表面上的含磷或含硼合金的保护层；
一个在所述保护层上面的贵金属的附着层；
一个同所述附着层形成一体的电连接；以及
一个位于铜座表面与保护层之间的贵金属形核层。
37.根据权利要求36的用于提供电连接的电结构，其中所述电连接为引线键合或钎焊凸块。
38.根据权利要求36的用于提供电连接的电结构，其中所述形核层为钯毫微粒子。
39.根据权利要求36的用于提供电连接的电结构，其中所述附着层由从包括Au、Pt、Pd与Ag的组中选择的金属形成。
40.根据权利要求36的用于提供电连接的电结构，其中所述保护层由从包括Ni-P、Co-P、Co-W-P、Co-Sn-P、Ni-W-P、Co-B、Ni-B、Co-Sn-B、Co-W-B与Ni-W-B的组中选择的一种合金形成。
41.根据权利要求36的用于提供电连接的电结构，还包括一个沉积在所述附着层上面的贵金属层，使贵金属层的总厚度在约2000
Figure C011046790005C2
与约12000
Figure C011046790006C1
之间。
42.根据权利要求36的用于提供电连接的电结构，还包括一个在其上面坐落铜座的硅晶片、硅-锗晶片或绝缘硅片的衬底。
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GB2365622B (en) 2004-08-11
CN1311526A (zh) 2001-09-05
JP3478804B2 (ja) 2003-12-15
MY119885A (en) 2005-07-29

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