CN100388513C - Light emitting device, package structure thereof and manufacturing method thereof - Google Patents
Light emitting device, package structure thereof and manufacturing method thereof Download PDFInfo
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- CN100388513C CN100388513C CNB2004800129360A CN200480012936A CN100388513C CN 100388513 C CN100388513 C CN 100388513C CN B2004800129360 A CNB2004800129360 A CN B2004800129360A CN 200480012936 A CN200480012936 A CN 200480012936A CN 100388513 C CN100388513 C CN 100388513C
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- main substrate
- circuit board
- auxiliary circuit
- conductive plate
- chip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Abstract
Provided are an light emitting device, a package structure thereof and a method of manufacturing the same, in which a light emitting efficiency and a heat dissipating capability can be increased, by mounting an LED chip to a main substrate for heat dissipation, made of a metal and having a large area are provided. The light emitting device package structure includes a main substrate for heat dissipation, including a reflecting mirror having an inner space whose an upper part is open and which is formed by a side wall protruding a predetermined height upward between an edge and a middle portion of the main substrate, the middle portion being where a light emitting device chip is to be mounted, an auxiliary circuit board which is interposed between the edge and the side wall of the main substrate, the auxiliary circuit board having a bottom surface partially being exposed to the main substrate, and which has at least one conductive pad formed on the exposed bottom surface and a chip bonding pad electrically connected to the conductive pad formed on a surface exposed upward, and a lead frame which is adhered to the conductive pad.
Description
Technical field
The present invention relates to the manufacture method of encapsulating structure and this encapsulating structure of a kind of luminescent device, this luminescent device, be particularly related to a kind of luminescent device with the radiator structure that is applicable to high-power output, and the manufacture method of encapsulating structure and this encapsulating structure.
Background technology
It is known by people recently to use phosphor (phosphor) to send the light-emitting diode (LED) of white light.The range of application of LED has been not only and has been used simply as luminous demonstration, but also has expanded to lighting field as the substitute of conventional illuminator.Further research well afoot for the height output LED that is applicable to lighting use.When temperature is higher than specified working temperature, begin to worsen as life-span and the performance characteristic of the LED of semiconductor device.Therefore, in order to improve the power output of LED, LED must have radiator structure, LED is effectively dispelled the heat so that its temperature can work the time is low as far as possible by this radiator structure.
In traditional LED, use mold to encapsulate the led chip that is installed on the lead frame (lead frame).In this LED, normally dispel the heat by lead frame, can't realize powerful device to such an extent as to the radiating efficiency of LED is too low thus.In addition under the situation of using the ultraviolet LED chip, the ultraviolet light deterioration of being sent by the ultraviolet LED chip easily as the plastics of mould closure material, thus reduce the durability of LED.Recently, in order to improve luminous efficiency and heat-sinking capability, developed a kind of upside-down mounting (flip) type led chip.Therefore, need a kind ofly be suitable for the flip chip type led chip, and have the LED structure of large tracts of land heating panel.
Summary of the invention
Technical problem
In order to address the above problem, thereby an object of the present invention is to provide a kind of by improving the manufacture method that heat-sinking capability and luminous efficiency are suitable for luminescent device, its encapsulating structure and this encapsulating structure of high-power output.Another object of the present invention provides a kind of being easy to flip chip type luminescent device chip is installed in wherein, and improves the manufacture method of encapsulating structure and this encapsulating structure of the high-power light-emitting device of heat-sinking capability, described luminescent device simultaneously.
Technical scheme
In order to realize above-mentioned purpose of the present invention, a kind of luminescent device encapsulating structure is provided, can comprise: the main substrate that is used to dispel the heat, it comprises the speculum with inner space, the top of described speculum is open and is formed by the sidewall of the predetermined altitude that raises up between the edge of described main substrate and middle body, described main substrate is made by metal material, and described middle body is the position that the luminescent device chip is installed; Auxiliary circuit board, it is inserted between the described edge and described sidewall of described main substrate, described auxiliary circuit board has the bottom surface that part is exposed to described main substrate, and described auxiliary circuit board has at least one and is formed on conductive plate on the described exposure bottom surface, and is formed on the chips welding dish that the lip-deep and described conductive plate that upwards exposes is electrically connected; And lead frame, it is engaged to described conductive plate.
Preferably, described auxiliary circuit board can comprise: basic unit, its be formed on the described main substrate and have can with first patchhole of the outer side engagement of described sidewall; And the upper strata, it has second patchhole greater than described first patchhole, with the part of the upper surface that exposes described basic unit, and is formed in the described basic unit, and wherein said chips welding dish is formed on the upper surface of described exposure of described basic unit.
In another embodiment of the invention, a kind of luminescent device encapsulating structure is provided, can comprise: the main substrate that is used to dispel the heat, it has the raise up chip mounting portion of predetermined altitude of middle body at described main substrate, and is made by metal material; Patchhole can pass described chip mounting portion to be installed into the described chip mounting portion around described main substrate; Part is exposed to the bottom surface of described main substrate, and described bottom surface of exposing has at least one formation conductive plate thereon; And the chips welding dish, be formed at the upper surface of described auxiliary circuit board and be electrically connected with described conductive plate; Speculum, it is formed on the described auxiliary circuit board and focuses on to the periphery with the light beam that the luminescent device chip that is installed on the described chip mounting portion is scattered; And lead frame, engage with described conductive plate.
Preferably, the upper surface that is parallel to described chip mounting portion on the described upper surface of described auxiliary circuit board is formed in the horizontal direction.
In another embodiment of the invention, a kind of luminescent device is provided, can comprise: the main substrate that is used to dispel the heat, comprise speculum with inner space, the top of described speculum is open and is formed by the sidewall of the predetermined altitude that raises up that described main substrate is made by metal material between the edge of described main substrate and middle body; At least one luminescent device chip, it is installed in the described middle body of described main substrate; Auxiliary circuit board, it has: patchhole, can pass the chip mounting portion to be installed into the described chip mounting portion around described main substrate; Part is exposed to the bottom surface of described main substrate, is formed with at least one conductive plate thereon; And the chips welding dish, be formed on the described auxiliary circuit board upper surface and and be electrically connected with described conductive plate; Lead frame, it is engaged to described conductive plate; And lens, it is engaged to described auxiliary circuit board.
At this, three led chips launching the radiation of red, green and blue look respectively are installed in the inner space of described main substrate, and are formed with at least four chips welding dishes and at least four lead frames to be respectively applied for public electrode and drive electrode.
Alternatively, described luminescent device chip can be the ultraviolet LED chip of emission ultraviolet light, and described lens are formed with non-reflection coating in its surface.
In another embodiment of the invention, a kind of luminescent device is provided, can comprise: the main substrate that is used to dispel the heat comprises in the central the raise up chip mounting portion of predetermined altitude of part, and is made by metal material; At least one luminescent device chip, it is installed on the described chip mounting portion; Auxiliary circuit board, it has: patchhole, can pass described chip mounting portion to be installed into the described chip mounting portion around described main substrate; Part is exposed to the bottom surface of described main substrate, is formed with at least one conductive plate thereon; And the chips welding dish, be formed on the described auxiliary circuit board upper surface and and be electrically connected with described conductive plate; Speculum, it is formed on the described auxiliary circuit board and focuses on to the periphery with the light beam that the luminescent device chip that is installed on the described chip mounting portion is scattered; Lead frame, it is engaged to described conductive plate; And lid, it engages with described speculum, to seal the inner space between described speculum and the described luminescent device chip.
Preferably, described lid is to be used for lens that the light that described luminescent device chip is launched is focused on.
In addition, described luminescent device chip is the flip chip type luminescent device chip that is formed with electrode on the bottom surface with respect to exiting surface, and the described electrode of described flip chip type luminescent device chip is electrically connected to described chips welding dish by welding.
In another embodiment of the invention, a kind of manufacture method of LED encapsulation is provided, can comprise: (a) be formed for the main substrate that dispels the heat, described main substrate comprises the speculum with inner space, the top of described speculum is open and is formed by the sidewall of the predetermined altitude that raises up that described middle body is the position of installation luminescent device chip between the edge of described main substrate and middle body; (b) form auxiliary circuit board, the part of the bottom surface of wherein said auxiliary circuit board is exposed to described main substrate, be formed with at least one conductive plate on the bottom surface of described exposure, and the chips welding dish that is electrically connected with described conductive plate is formed on the exposed surface upwards, and described thus auxiliary circuit board is installed between the described edge and described sidewall of described main substrate; (c) described auxiliary circuit board is engaged to described main substrate; (d) lead frame is engaged to the described conductive plate that on the described bottom surface of described auxiliary circuit board, forms; And (e) the plating target area that engages the assembly that forms behind the described lead frame is electroplated.
Preferably, step (e) can comprise: (e-1) with the expose portion nickel plating of described chips welding dish and described lead frame and described main substrate; (e-2) described chips welding dish and described lead frame is gold-plated; And (e-3) with the internal electroplated at least a reflecting material that is selected from silver, aluminium and light nickel of the speculum of described main substrate.
In another embodiment of the invention, a kind of manufacture method of luminescent device encapsulation is provided, can comprise: 1) be formed for the main substrate that dispels the heat, described main substrate has in the central the protruding predetermined altitude of part being higher than the chip mounting portion of described main edges of substrate, and is made by metal material; (2) form auxiliary circuit board, described auxiliary circuit board has the patchhole that can pass described chip mounting portion, be formed the conductive plate that a part of bottom surface of described auxiliary circuit board is exposed to described main substrate, and be positioned at the chips welding dish that its surface is gone up and is electrically connected with described conductive plate; (3) with the periphery of described auxiliary circuit board with the described chip mounting portion of the described main substrate that passes described patchhole; (4) lead frame is engaged to conductive plate on the bottom surface that is formed on described auxiliary circuit board; (5) speculum is engaged to described auxiliary circuit board, described speculum is formed the light beam that the luminescent device chip that is installed on the described chip mounting portion is scattered and focuses on to the periphery.
Description of drawings
Fig. 1 shows the stereogram of the LED with encapsulating structure according to the first embodiment of the present invention;
Fig. 2 is the cutaway view of Fig. 1;
What Fig. 3 showed the LED shown in Fig. 2 goes out light path (light exit paths);
Fig. 4 is the stereogram that is used to explain some parts that the part of encapsulating structure manufacture process shown in Figure 1 is chosen;
Fig. 5 is the rearview of the auxiliary circuit board shown in Fig. 4;
Fig. 6 show the auxiliary circuit board shown in Fig. 4 and the main substrate that is used to dispel the heat between the cutaway view that connects;
Fig. 7 shows the stereogram of the LED with encapsulating structure of second embodiment according to the present invention;
Fig. 8 is the rearview of the auxiliary circuit board shown in Fig. 7;
Fig. 9 is the rearview of the LED shown in Fig. 7;
Figure 10 shows the cutaway view of the LED with encapsulating structure of third embodiment according to the present invention;
Figure 11 shows the stereogram according to the LED with encapsulating structure of the 4th embodiment of the present invention;
Figure 12 is the cutaway view of device shown in Figure 11;
Figure 13 shows the cutaway view that the flip chip type led chip is mounted to the state of encapsulating structure shown in Figure 11;
Figure 14 is the stereogram that is used to explain some part that the part of encapsulating structure manufacture process shown in Figure 11 is chosen;
Figure 15 is the rearview of the auxiliary circuit board shown in Figure 14;
Figure 16 has illustrated the cutaway view that connects between the auxiliary circuit board shown in Figure 14, the main substrate that is used to dispel the heat and the speculum;
Figure 17 shows the stereogram according to the LED with encapsulating structure of the 5th embodiment of the present invention;
Figure 18 shows the cutaway view according to the LED with encapsulating structure of the 6th embodiment of the present invention;
Realize preferred form of the present invention
Describe the preferred embodiments of the invention in detail hereinafter with reference to accompanying drawing.
Fig. 1 shows the stereogram of the LED with encapsulating structure according to the first embodiment of the present invention.
With reference to Fig. 1, LED 100 comprises led chip 110, lens 120 and encapsulating structure 200.Encapsulating structure 200 comprises main substrate 210, auxiliary circuit board 230 and the lead frame 250 that is used to dispel the heat.As shown in Figure 2, main substrate 210 is included between its edge and the core with the sidewall with predetermined altitude 211 that is formed centrally.In addition, the inboard of sidewall 211 is tapered downwards, that is, the radius of curvature of the lower inside of sidewall 211 is less than top, thereby produced the mirror structure that can focus on the light that led chip 110 sends.
As shown in Figure 4, main substrate 210 is formed crosswise, to expose the marginal portion of auxiliary circuit board mounted thereto 230.
Available material of deciding substrate 210 comprises copper and copper alloy (for example brass, W-Cu alloy and molybdenum-copper alloy).
Preferably, form main substrate 210 by utilizing above-mentioned material to form metallic plate with structure shown in Figure 4, that is, at first nickel plating on all surfaces of metallic plate, then plating highly reflective material on the surface of the inner space 213 that sidewall 211 is limited.
Preferably select at least a reflecting material as the lip-deep material that is plated in inner space 213 from silver, aluminium and light nickel.
At this, the nickel of light prepares by add glossy material in nickel.The example of glossy material comprises benzoic sulfimide (saccharin), formalin (formalin) and by to wherein adding the material that nickelous sulfate, nickel chloride and boron prepare.
It is on the flat chip mounting portion 214 that at least one led chip 100 is installed in the inner space 213 of main substrate 210.Here, led chip 110 can be installed (sub-mount) (not shown) by the bottom and be installed on the chip mounting portion 214, rather than shown in illustrated examples.
Chips welding dish (chip bonding pad) 238 is set on the installation surface 234 of auxiliary circuit board 230.Chips welding dish 238 is connected with led chip 110 by gold thread.
The preferred embodiment of auxiliary circuit board 230 is described with reference to Fig. 4 to Fig. 6.
The bottom edge of first ceramic layer 231 is formed with and is used for the conductive plate 237 that is connected with lead frame 250.Preferably, by at first form tungsten or molybdenum-manganese alloy on the bottom surface of first ceramic layer 231, secondly nickel plating on synthetic surface forms conductive plate 237.
Form conductive pattern, so that in first ceramic layer 231 and second ceramic layer 233, conductive plate 237 is electrically connected with chips welding dish 238.Be equivalent to basic unit at this first ceramic layer 231 and second ceramic layer 233, the 3rd ceramic layer 235 is equivalent to the upper strata.
Conductive pattern comprises the first conductive pattern 241a, the second conductive pattern 241b and the 3rd conductive pattern 241c.The first conductive pattern 241a passes second ceramic layer 233 in its position that is connected with chips welding dish 238.The second conductive pattern 241b is formed at the upper surface of first ceramic layer 231, and is connected with the first conductive pattern 241a.The 3rd conductive pattern 241c passes first ceramic layer 231 so that the second conductive pattern 241b is connected with conductive plate 237.
By forming the hole respectively on second and first ceramic layer 233 and 231, the filled conductive material forms the first and the 3rd conductive pattern 241a and 241c in described hole then.
Preferably, conductive pattern 241a, 241b and 241c are formed by tungsten or molybdenum-manganese alloy.
The second patchhole 239a that is formed on the 3rd ceramic layer 235 middle parts is greater than the first patchhole 239b that is formed on second ceramic layer 233 and first ceramic layer, 231 middle parts.Therefore, when the 3rd ceramic layer 235 to first ceramic layers 231 were bonded to each other, the fringe region that extends to the first patchhole 239b of second ceramic layer 233 from the edge of the second patchhole 239a of the 3rd ceramic layer 235 had just formed installation surface 234.
Show among Fig. 5 of bottom surface of first ceramic layer 231, in having hatched part by the part of label 244 expressions corresponding to the conductive plate 237 separated bracket panels that engage for the treatment of easily to be bonded to main substrate 210.
Preferably, bracket panel 244 by at first form tungsten or molybdenum-manganese alloy then nickel plating thereon form.
According to a further aspect in the invention, in fact can be by the second conductive pattern 241b being extended to the lateral edge of first ceramic layer 231, and in lateral edge, form lateral conductive figure (not shown) the second conductive pattern 241b is connected to conductive plate 237, thereby chips welding dish 238 is electrically connected with conductive plate 237.
In addition, be installed in together at the red, green and blue led chip under the situation of inner space 213, four chips welding dishes are formed and are connected to corresponding conductive plate independently to drive each red, green and blue led chip respectively.
Arranging and producing under the situation of a plurality of auxiliary circuit boards 230 or a plurality of encapsulating structure 200 in batches, inwardly help the cut (cutting work) of auxiliary circuit board 230 on each angle of auxiliary circuit board 230, and can be used to form aforesaid lateral conductive figure with the marginal portion 249 of circular depressed.
As shown in Figure 3, in LED 100, be installed in the light that the led chip 110 on the main substrate 210 sends and on sidewall 211 and lens 120, be focused, penetrating with the required angle of divergence with said structure.
Except above illustrate, can also suitably design the curvature and the shape of lens 120 according to the angle of divergence of the light that will use.Can use the material as lens 120 such as transparent synthetic resin or glass.
The inner space 130 that forms between lens 120 and encapsulating structure 200 can be filled the material approximate with the refractive index of the lens 120 that will use.Silicon is filled in the inner space 130 that for example, can form between lens 120 and encapsulating structure 200.Like this, the light that led chip 110 sends can not be reflected at the inner surface of lens 120, thereby improves the utilization ratio of light.
In fact, lead frame 250 can use surface installing type (surface mounted) lead frame rather than shown in pin-type (pin type) lead frame.
Followingly describe the LED have according to the encapsulating structure of second embodiment, in described second embodiment, used the lead frame of mounted on surface with reference to Fig. 7 to 9, wherein similar label represent to above shown in the similar functional part of functional part.
With reference to Fig. 7 to Fig. 9, LED 300 comprises main substrate 310 and the lead frame 350 that is used to dispel the heat.Main substrate 310 extends and engages from each side of auxiliary circuit board 330.
As shown in Figure 8, in the lateral edges of the lower surface of auxiliary circuit board 330, be formed for the conductive plate 337 that installation surface is installed lead frame 350.The bracket panel 344 that is used to be attached to main substrate 310 is separated with conductive plate 337.Chips welding dish 238 is connected by the conductive pattern that forms according to aforesaid way with conductive plate 337.
The hole 311 that forms around the edge of main substrate 310 is formed for engaging with screw, and in fact can omit hole 311 according to the mode of joint.
Figure 10 shows the LED 400 that uses ultraviolet LED chip 410 therein.
In Figure 10, similar label represent to above shown in the similar functional part of functional part.With reference to Figure 10, LED 400 has the plano lens 320 that is engaged to auxiliary circuit board 230.
In fact can on the surface of the curved lens shown in Fig. 1 120, use non-reflection clad material.
Below, description is had the manufacture process of the LED of structure shown in Fig. 1 to Figure 10.
Form auxiliary circuit board 230 and 330, main substrate 210 and 310 and lead frame 250 and 350 at first, respectively.
Then, first ceramic layer 231, second ceramic layer 233 and the 3rd ceramic layer 235 successive layer merge and carry out roasting under known roasting temperature.Preferably, conductive plate 237 and the bracket panel 244 that is formed on the exposed surface of auxiliary circuit board 230 is coated with nickel.
Simultaneously, molded or suppress stand-by metal material before main substrate 210 and 310 is fabricated to said structure.
Preferably, by structure shown in will manufacturing by the metallic plate that copper with thermal conductive resin or brass material are made, and then on all surfaces of described metallic plate nickel plating form main substrate 210 and 310.
As mentioned above, according to installation form different and different known various forms of lead frames for example pin-type (lead pin type) and surface installing type can be applied to lead frame 250 and 350.Preferably lead frame 250 and 350 is coated with nickel.
When the main substrate 210 and 310 of formation like this, auxiliary circuit board 230 and 330 and after lead frame 250 and 350 preparations finish, they are engaged with each other together by welding compound.
As an embodiment, as Fig. 4 and shown in Figure 6, main substrate 210 and 310, auxiliary circuit board 230 and 330 and lead frame 250 and 350 be assembled into a kind of like this state mutually, be that brazing sheet (brazing sheet) 280 and 281 is inserted in respectively between auxiliary circuit board 230 and the main substrate 210, and between the conductive plate 237 and lead frame 250 and 350 of auxiliary circuit board 230, and under the temperature that is higher than brazing sheet 280 and 281 fusing points, be melted, thus above-mentioned parts be engaged with each other.At this, brazing sheet 280 and 281 can be made by silver-copper alloy or gold-ashbury metal.
In addition, said modules can form the silver-copper alloy of paste or gold-ashbury metal by use and welds and be bonded together.
After this assembling was finished, the expose portion that is formed on chips welding dish 238, lead frame 250 and main substrate 210 and 230 on the auxiliary circuit board 230 was by nickel plating.
Then, chips welding dish 238 and lead frame 250 and 350 are by gold-plated.
At last, main substrate 210 and 310 inner space 213 surface-coated is stamped at least a reflecting material that is selected from silver, aluminium and light nickel.
In addition, when described assembly manufacturing is finished, and after having carried out above-mentioned nickel plating technology, chips welding dish 238, lead frame 250 and 350 and the surface of the inner space 213 of main substrate 210 and 310 by silver-plated.
After finishing encapsulating structure by said process, stand-by led chip 110 directly or by bottom installation (not shown) is installed on the chip mounting portion 214 of main substrate 210 and 310.Then, connect led chip 110 and relevant chip welded disc 238 by line 140.Then lens 120 are fixed to auxiliary circuit board 230 and 330.After the bonding part between lens 120 and the auxiliary circuit board 230 was by encapsulant (for example epoxy resin) sealing, LED 100,300 and 400 promptly made and finishes.
In order to produce white light, three kinds of led chip (not shown) launching red, green and blue light are installed in the inner space 213.
Under the situation that the led chip with a plurality of emission different colours light is installed together as described above, LED has the chips welding dish that is used for public electrode, the chips welding dish that is used for each led chip drive electrode and corresponding to the lead frame of each chips welding dish.Like this, the first lead frame 250a among Fig. 4 in four lead frames 250 is used as public electrode, and second to the 4th lead frame 250b, 250c and 250d are used as the drive electrode of red, green and blue LED.In addition, be formed with four chips welding dishes 238, and lead frame 250a to 250b is connected to the relevant chip welded disc respectively independently.In fact the quantity of lead frame 250 and chips welding dish 238 can be four or more.
Figure 11 to 18 shows the LED that the flip chip type led chip can be installed according to another embodiment, wherein similar label represent to above shown in the similar functional part of functional part.
Figure 11 shows the stereogram according to the LED with encapsulating structure of the 4th embodiment of the present invention, wherein similar label represent to above shown in the similar functional part of functional part.
With reference to Figure 11, LED 500 comprises led chip 110, lens 120 and encapsulating structure 600.
Encapsulating structure 600 comprises main substrate 610, auxiliary circuit board 630, lead frame 250 and speculum 670.
As shown in figure 12, main substrate 610 has the chip mounting portion 611 that is used to install led chip, and chip mounting portion 611 is predetermined height protruding upward at the middle part of pedestal 612.
In this exemplary embodiment, chip mounting portion 611 is a rectangle.
Certainly, different shape can be adopted in chip mounting portion 611, comprises annular.
Preferably, main substrate 610 uses and has the material (as illustrated in fig. 1) of thermal conductive resin and be coated with nickel.
At led chip 111 is under the situation of flip chip type led chip, and as shown in figure 13, chips welding dish 238 can be electrically connected to the electrode of flip chip type led chip 111 by welding.Label 115 expressions are used for flip chip type led chip 111 is connected to the scolder of main substrate 610.
Be formed with the patchhole (639 shown in Figure 14) of the chip mounting portion 611 that can pass main substrate 610 on the auxiliary circuit board 630.
Preferably, the thickness of auxiliary circuit board 630 is defined as, is engaged at auxiliary circuit board 630 under the state of main substrate 610, the upper surface of the upper surface of auxiliary circuit board 630 and chip mounting portion 611 is arranged in the delegation.
Like this, flip chip type led chip 111 and top outgoing type led chip can be mounted.
Shown in Figure 14 to 16, this auxiliary circuit board 630 has first ceramic layer 631 and the laminated in succession structure of second ceramic layer 633.
Preferably, the upper surface of second ceramic layer 633 is formed with and engages bracket panel 245, engages bracket panel 245 and is separating with possible corresponding zone, bonding part and the chips welding dish 238 of speculum 670.
That is, form porose at the middle part of speculum 670.The inner surface of speculum 670 is tapered downwards, and its top is greater than its underpart thus, thereby the light that makes led chip 110 and 111 send can be focused.
At least the inner surface of speculum 670 is formed by high reflecting material.For example, the inner surface of speculum 670 is formed by at least a material that is selected from silver, nickel and aluminium.
That is, speculum 670 is formed by in silver, nickel and the aluminium any one.Perhaps, speculum 670 is at first by molded synthetic resin or metal, covers the material of high reflection and forms at inner surface at least then.At this, preferably be selected from the high reflecting material that at least a reflecting material in silver, aluminium and the light nickel is used as covering.
In addition, in fact the inner space that can form speculum 670 by molded transparent material (for example silicon or epoxy resin) to be replacing lens 120, thereby forms lid.
Figure 17 shows the LED with encapsulating structure according to the 5th embodiment, has wherein used the lead frame of mounted on surface.
With reference to Figure 17, LED 700 comprises each side extension and the connection main substrate 710 thereon from auxiliary circuit board 730, and lead frame 750.Be raised with chip mounting portion 611 on the pedestal 712 of main substrate 710.
As shown in figure 18, conductive plate and bracket panel are formed on the bottom surface of auxiliary circuit board 730.Conductive plate is identical with the structure shown in Figure 14 with structure outside the bracket panel.
Figure 18 shows the LED 800 with ultraviolet LED chip.
With reference to Figure 18, LED 800 comprises the plano lens 320 that is engaged to speculum 670.
Preferably, speculum 670 is formed by the aluminium that has high reflectance at ultraviolet region.
Below, description is had the manufacture process of the LED of structure shown in Figure 11 to Figure 18.
Form auxiliary circuit board 630 and 730, main substrate 610 and 710, speculum 670 and lead frame 250 and 350 at first, respectively. Auxiliary circuit board 630 and 730 is formed has said structure.
As mentioned above, speculum 670 forms (for example aluminium) by high reflecting material, and the perhaps mould of being made by other metals except aluminium or synthetic resin by formation, and the material that then reflects with height covers its surface and forms.
By forming the mould make by other metals except aluminium or synthetic resin and covering with the material that height reflects under the situation that its surface forms speculum 670, after nickel plating on the surface of mould, will carry out the joining process of the following stated.
When main substrate 610 and 710, auxiliary circuit board 630 and 730, lead frame 250 and 350 and after speculum 670 preparations finish, they are joined together.
At this, can use above-mentioned joint method selectively.As an example, forming under the situation of speculum 670 by nickel plating in succession and Yin Lai, utilize shown in Figure 14 and 16 brazing metal sheet 280,281 and 283 or soldering paste it is bonded to each other.
After said modules preparation was finished, all conducting elements promptly were formed on chips welding dish 238, lead frame 250, main substrate 610 and speculum 670 on the auxiliary circuit board 630 all once more by nickel plating.
Then, chips welding dish 238, lead frame 250, main substrate 210 and speculum 670 are by silver-plated.
In addition, in fact the inner surface of speculum 670 can cover at least a reflecting material that is selected from aluminium and the light nickel.
Simultaneously, under the situation that speculum 670 is formed by aluminium, in fact main substrate 610 and 710, auxiliary circuit board 630 with 730 and lead frame 250 and 350 be engaged with each other by welding compound and be in the same place, the assembly that engages is by nickel plating and silver-plated in succession, and can use bond for example epoxy resin speculum 670 is engaged to auxiliary circuit board 630.
After encapsulating structure 600 completed, stand-by led chip 110 directly or by bottom installation (not shown) was installed on the chip mounting portion 611.Then, by line 140 led chip 110 is soldered on the relevant chip welded disc 238.
In addition, under the situation of flip chip type led chip 111, heat conduction and fixedly scolder be deposited on the chip mounting portion 611 and be electrically connected after scolder is deposited on the chips welding dish 238, led chip 111 is installed.
Then, lens 120 are fixed to speculum 670.After the bonding part between lens 120 and the speculum 670 was by encapsulant (for example epoxy resin) sealing, LED 500,700 and 800 promptly made and finishes.
As above in conjunction with description that Figure 11 to 18 did, in order to produce white light, in fact luminescent device can also be constructed to have the chips welding dish that is used for public electrode, so that three kinds of led chip (not shown) of emission red, green and blue light to be installed respectively, and chips welding dish and corresponding lead frame with the individual drive electrode that is used for each led chip.
Though the present invention is described to use led chip, in fact can use other known various luminous semiconductor chips, comprise laser diode chip.
Industrial applicability
As mentioned above, in the encapsulating structure of LED according to the present invention, LED and the system of encapsulating structure In the making method, led chip is installed on the main substrate of large scale, metallicity, and can be right Light focuses on, thereby improves luminous efficiency and heat radiation ability.
Claims (2)
1. luminescent device encapsulating structure comprises:
The main substrate that is used to dispel the heat, comprise speculum with inner space, the top of described speculum is open, and the sidewall by the predetermined altitude that raises up between the edge of described main substrate and the middle body forms, described main substrate is made by metal material, and described middle body is the position that the luminescent device chip is installed;
Auxiliary circuit board, place between the described edge and described sidewall of described main substrate, and have part and be exposed to the bottom surface of described main substrate, described auxiliary circuit board has at least one conductive plate that forms in described exposure bottom surface, the chips welding dish that is electrically connected with described conductive plate that forms in the surface that upwards exposes; Basic unit forms on described main substrate, and has first patchhole in the outside that can be engaged to described sidewall; And the upper strata, in described basic unit, forming, and have greater than second patchhole of described first patchhole a part with the upper surface that exposes described basic unit, wherein said chips welding dish is formed on the upper surface of described exposure of described basic unit; And
Lead frame engages with described conductive plate.
2. luminescent device comprises:
The main substrate that is used to dispel the heat comprises the speculum with inner space, and the top of described speculum is open and is formed by the sidewall of the predetermined altitude that raises up that described main substrate is made by metal material between the edge of described main substrate and middle body;
At least one luminescent device chip, it is installed in the described middle body of described main substrate;
Auxiliary circuit board, it has: patchhole, can pass the chip mounting portion to be installed into the described chip mounting portion around described main substrate; Part is exposed to the bottom surface of described main substrate, is formed with at least one conductive plate thereon; The chips welding dish is formed on the described auxiliary circuit board upper surface and with described conductive plate and is electrically connected; Basic unit is formed on the described main substrate, and have can with first patchhole of the outer side engagement of described sidewall; And the upper strata, in described basic unit, form, and have second patchhole greater than described first patchhole, with the part of the upper surface that exposes described basic unit, wherein said chips welding dish is formed on the upper surface of described exposure of described basic unit;
Lead frame, it is engaged to described conductive plate; And
Lens, it is engaged to described auxiliary circuit board.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020030030478A KR100566140B1 (en) | 2003-05-14 | 2003-05-14 | Light emitting diode and package structure and method of manufacturing thereof |
| KR1020030030478 | 2003-05-14 | ||
| KR1020040012008 | 2004-02-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1788359A CN1788359A (en) | 2006-06-14 |
| CN100388513C true CN100388513C (en) | 2008-05-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2004800129360A Expired - Fee Related CN100388513C (en) | 2003-05-14 | 2004-05-13 | Light emitting device, package structure thereof and manufacturing method thereof |
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| Country | Link |
|---|---|
| KR (1) | KR100566140B1 (en) |
| CN (1) | CN100388513C (en) |
Cited By (2)
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|---|---|---|---|---|
| WO2012037720A1 (en) * | 2010-09-21 | 2012-03-29 | Chang Kuo-Kuang | Method for manufacturing packaged light emitting diode |
| TWI418736B (en) * | 2011-06-01 | 2013-12-11 |
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| KR100621743B1 (en) * | 2004-11-08 | 2006-09-13 | 서울반도체 주식회사 | Light emitting diode package employing a heat-sinking body and method of fabricating the same |
| KR100646198B1 (en) * | 2005-01-25 | 2006-11-14 | 엘지전자 주식회사 | A Structure of LED Package for Dispersing Heat and LED Package with the Same |
| KR100591943B1 (en) * | 2005-03-26 | 2006-06-20 | 서울반도체 주식회사 | Light emitting diode |
| JP5177554B2 (en) | 2005-03-31 | 2013-04-03 | 新灯源科技有限公司 | Lighting equipment using high power LEDs with high efficiency heat dissipation |
| KR100641889B1 (en) * | 2005-04-01 | 2006-11-06 | 박병재 | Light emitting diode structure |
| JP5326204B2 (en) * | 2006-11-29 | 2013-10-30 | 富士通株式会社 | LIGHT EMITTING COMPONENT, ITS MANUFACTURING METHOD, LIGHT EMITTING COMPONENT ASSEMBLY AND ELECTRONIC DEVICE |
| WO2009000106A1 (en) * | 2007-06-25 | 2008-12-31 | Jenshyan Chen | Led lighting device |
| CN102226995B (en) * | 2011-05-25 | 2013-01-30 | 映瑞光电科技(上海)有限公司 | LED (light-emitting diode) packaging structure and manufacturing method thereof |
| CN102891245A (en) * | 2012-09-17 | 2013-01-23 | 温州大学 | High-power white light emitting diode (LED) packaging structure employing fluorescence wafer and packaging method thereof |
| KR101357107B1 (en) * | 2013-02-07 | 2014-02-04 | 주식회사 굿엘이디 | Chip on board light-emitting diode package of high luminous |
| TWI571598B (en) * | 2015-01-15 | 2017-02-21 | 旭德科技股份有限公司 | Illumination apparatus |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN1788359A (en) | 2006-06-14 |
| KR20040098191A (en) | 2004-11-20 |
| KR100566140B1 (en) | 2006-03-30 |
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