CN100391017C - Light-emitting device - Google Patents

Light-emitting device Download PDF

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Publication number
CN100391017C
CN100391017C CNB2004800147284A CN200480014728A CN100391017C CN 100391017 C CN100391017 C CN 100391017C CN B2004800147284 A CNB2004800147284 A CN B2004800147284A CN 200480014728 A CN200480014728 A CN 200480014728A CN 100391017 C CN100391017 C CN 100391017C
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China
Prior art keywords
luminescent device
plate
groove
base
led wafer
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CNB2004800147284A
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Chinese (zh)
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CN1795567A (en
Inventor
桥本拓磨
杉本胜
横谷良二
西冈浩二
岩堀裕
石崎真也
铃木俊之
内野野良幸
武藤正英
森哲
木村秀吉
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Panasonic Holdings Corp
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Matsushita Electric Works Ltd
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Publication of CN1795567A publication Critical patent/CN1795567A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Abstract

A light-emitting device (200) has a submount (100) and a plate for heat transfer (300) having a metallic plate (30). The submount (100) has a mount base (10), at least one light-emitting diode chip (5) mounted thereon and electrically conducting lines (12-17) formed on the mount base (10) to be connected electrically to the light-emitting diode chip (5). A first plane (11) of the mount base (10) of the submount (100) is bonded thermally to the first plate (300). For example, the plate is a circuit board having a metallic plate (30), and the submount (100) is bonded thermally to the metallic plate (30) of the one of the at least one plate (300). In an example, a second plate for heat transfer is also bonded thermally to a second plane of the mount base (100) for providing a plurality of heat transfer paths.

Description

Luminescent device
Technical field
The present invention relates to a kind of luminescent device, relate in particular to a kind of luminescent device with good heat transfer capacity with light-emitting diode.
Background technology
Recently, the luminescent device of the light (comprising white light) by combining, send one or more colors that are different from the light that the LED wafer sends with various types of fluorescent materials based on gallium nitride semiconductor emission blue light or ultraviolet light-emitting diode (LED) wafer is developed.This luminescent device for example has volume advantage little, in light weight and low in energy consumption, and is widely used for the light source of display, replaces the light source of miniature bulb, the light source of LCD, or the like.When such luminescent device was used to the light source of light source, liquid crystal board of display or similar light source, the brightness of each wafer was low and not enough.So that the LED wafer is installed and is sealed in the installation substrate, this installation substrate has the current-carrying part that is connected to external circuit in providing the LED shell, and the LED shell of requirement is installed on the printed circuit board (PCB) usually.For example, the Japan Patent spy opens 2001-134558 and discloses a kind of luminescent device, and the metal derby that wherein has LED wafer in its recess is installed on the metal plate.
For high luminous intensity is provided, can increase the injection current that is used for the LED wafer.Because now the usable LED wafer has for a short time of 10% efficient, most of input electric energy is converted into heat, so heat increases along with the increase of electric current.We have known that useful life and the such characteristic of efficient such as the LED wafer suffers damage when temperature raises because of the heat that produces.Because by the resin manufacture such as the such low-thermal conductivity of polyimides or epoxy resin, therefore the heat that produces can not distributed from the LED shell printed circuit board (PCB) that is used for installing the LED shell effectively usually.
Fig. 1 has shown an example (for example, the Japan Patent spy opens 2002-162626) of the luminescent device 99 of the prior art that is delivered in the heat that produces in the LED shell effectively.Each LED shell 90 has a pair of external terminal 95 that is called as the Plane Installation type, and is installed in the film substrate 92, and this film substrate is the printed circuit board (PCB) of being made by polyimides.The circuit zone 93 of conductive pattern is formed on the end face of film substrate 92, and its back side with adhesive bond to the scaffold 91 that is made of metal.The electrode 95 of LED shell 90 is connected to circuit 93.In addition, regions perpendicular below LED shell 90 ground forms holes by film substrate 92 and framework 91, and the viscosity filler 94 with high thermoconductivity is filled in the described hole back up to LED shell 90.The a part of heat via line zone 93 that is produced by the LED wafer is transmitted to film substrate 92 and further is transmitted to framework 91 to distribute therefrom.In addition, the most of heat that is produced by the LED shell directly is transmitted to film substrate 92 and further is transmitted to framework 91 to distribute therefrom by the viscosity filler.
Yet the heat transfer structure of above-mentioned luminescent device has following problem.The viscosity filler of mainly being made by silicones and having a high thermoconductivity is used to conduct the heat that produces in the LED wafer, but the such material of the thermal conductivity ratio that it has such as metal or pottery is littler.In addition, except the LED shell being installed to the step in circuit zone 93, in its encapsulation process, at least also need described filler is filled in the described hole to be used to form the step of heat-transfer path.And, the filling step trouble.
Summary of the invention
The luminescent device that the purpose of this invention is to provide a kind of LED of having wafer, it has simple structure and conducts heat to improve.
In one aspect of the invention, a kind of luminescent device is provided, it comprises: base (submount), it comprises the installation substrate of being made by electrical insulating material, is installed in suprabasil at least one LED wafer to be installed and to be formed in the described installation substrate to be electrically connected to the electric lead of described LED wafer; With first plate that is used to conduct heat, it comprises metallic plate; First plane of wherein relative with the metallic plate of described first plate installation substrate is bonded thermally to described first plate, and described installation substrate has recess, and described at least one LED wafer is installed on the bottom of described recess.Described heat transfer means that heat conducts by the solid material between described base and described first plate that is used to conduct heat.Hot link comprises that contact between two planes or its engage with scolder or analog.
Preferably, described first plate that is used to conduct heat comprises described metallic plate, is formed at the insulating barrier on the metallic plate and is formed at electrical connection pattern layer on the described insulating barrier.First plane of the installation substrate of described base is bonded thermally to the part of the described metallic plate of described first plate, and the described part of described metallic plate is for passing through to remove described insulating barrier and described patterned layer exposed portions in a side relative with described base.The described electric lead of described base is electrically connected to the described electrical connection pattern layer of described first plate.The heat that produces in described wafer can be passed to described metallic plate.
Preferably, at least one in described installation substrate and described first plate has projection, and this projection has the plane to be thermally bonded in described installation substrate and described first plate another.Therefore, described installation substrate can directly be engaged to described first plate.
Preferably, one in described installation substrate and described first plate has projection, and another has recess, thereby described projection fits in the described recess with thermal bonding between them.
Preferably, make described LED wafer be installed to described installation substrate with grafting material with facing down.
Preferably, described installation substrate comprises through hole, and described through hole is higher than the layer that the material of described installation substrate makes by pyroconductivity and covers.For example, described through hole is full of the material that pyroconductivity is higher than described installation substrate.
Preferably, described luminescent device further comprises the hardware between described first plate that is located at described installation substrate and is used to conduct heat.The described expose portion thermal bonding of the installation substrate of described hardware and described base and the described metallic plate of described first plate.For example, described hardware is a joint element, joins the described expose portion of the described metallic plate of described first plate to the installation substrate with described base.
Preferably, described installation substrate is by the ceramic material manufacturing.Therefore, can be than more effectively transmitting heat by the installation substrate of resin manufacture.
At different aspect of the present invention, a kind of luminescent device further is included at least one groove on first plane of described installation substrate.Preferably, each in described at least one groove all comprises a bottom and two sides, and the width between described two sides increases along the direction from the opening of described bottom each to described at least one groove.
Preferably, described luminescent device further is included in the layer that forms on described at least one groove, and described layer is formed by the material that pyroconductivity is higher than described installation substrate.
Preferably, make described LED wafer be installed to described installation substrate with grafting material, and described at least one groove shaped is formed between first plane of described grafting material and described installation substrate to be thermally bonded to the described expose portion of described metallic plate with facing down.
Preferably, provide two or more grooves, and the density of described groove increases towards the zone that just is under the described diode wafer.
Preferably, the quantity of described at least one groove is equal to or greater than two, and described groove has the different degree of depth.The degree of depth of described groove increases towards the zone that just is under the described diode wafer.
Preferably, the quantity of described at least one groove is equal to or greater than two, and the density of described groove increases towards the zone that just is under the described grafting material.
Preferably, the quantity of described at least one groove is equal to or greater than two, and described groove has the different degree of depth.The degree of depth of described groove increases towards the zone that just is under the described grafting material.
Preferably, the quantity of described at least one groove is equal to or greater than two, and described groove has the different degree of depth.The quantity of described at least one groove is equal to or greater than two, and the density of described groove increases towards the zone under the central LED wafer that just is in the described LED wafer.
Preferably, the quantity of described at least one LED wafer is equal to or greater than two, the quantity of described at least one groove is equal to or greater than two, described groove has the different degree of depth, and described groove in described at least one LED wafer central LED wafer and the degree of depth in the zone between the described expose portion of described metallic plate greater than the degree of depth in other zone.
In another aspect of this invention, except first plate that is used to conduct heat, described luminescent device further comprises second plate that is used to conduct heat, and this second plate is bonded thermally to second plane of the described base that is different from its first plane.Therefore the heat that produces in described LED wafer can be transmitted by described first and second plates in two ways.Described heat transfer means that heat conducts by the solid material between described base and described first and second plates that are used to conduct heat.
Preferably, described second plate that is used to conduct heat comprises another metallic plate, is formed at the insulating barrier on another metallic plate and is formed at electrical connection pattern layer on the described insulating barrier.Described electrical connection pattern layer is electrically connected to the described lead of described base.If the described installation substrate of described base is directly joined to described metallic plate, heat more effectively is delivered to described second plate so.
Preferably, in described first and second plates comprise at least one fuel plate with described first and second plates in another thermal bonding.
Preferably, described luminescent device further comprise the heat conducting element that is located between described first and second plates with described first and second plates in each thermal bonding.
Preferably, in described first and second planes has at the opening that is installed on suprabasil described at least one LED wafer of described installation.
Preferably, described installation substrate comprises the heat-transfer matcrial that is embedded into wherein, and described heat-transfer matcrial has the pyroconductivity higher than the main body of described installation substrate.For example, described heat transfer element engages with in described first and second plates at least one.
An advantage of the invention is that the heat that produces can be easily be delivered to first plate with its thermal bonding by thermal bonding from base in LED wafer.
Another advantage of the present invention is that the temperature of LED wafer raises and can descend because of effectively conducting heat.
Further advantage of the present invention is that the heat that produces in LED wafer can more effectively be transmitted by a plurality of heat-transfer paths, to reduce the temperature of LED wafer.
Description of drawings
Fig. 1 is the profile of the luminescent device of prior art;
Fig. 2 is the profile of the luminescent device of one embodiment of the present of invention;
Fig. 3 is the profile of the luminescent device of another embodiment of the present invention;
Fig. 4 is the profile of the luminescent device of another embodiment of the present invention;
Fig. 5 A is the profile of base of LED that is used for the luminescent device of another embodiment of the present invention, and Fig. 5 B is the profile of described luminescent device;
Fig. 6 is the profile of another embodiment of the luminescent device of one embodiment of the present of invention;
Fig. 7 is the profile of base of LED that is used for the luminescent device of another embodiment of the present invention;
Fig. 8 is the profile of the luminescent device of another embodiment of the present invention;
Fig. 9 is the profile of another embodiment of the luminescent device of one embodiment of the present of invention;
Figure 10 is the profile of another luminescent device of another embodiment of the present invention;
Figure 11 is the profile of the luminescent device of another embodiment of the present invention;
Figure 12 is the profile of the luminescent device of another embodiment of the present invention;
Figure 13 is the profile of the luminescent device of another embodiment of the present invention;
Figure 14 is the profile of an application of the luminescent device of another embodiment of the present invention;
Figure 15 is the profile of Another Application of the luminescent device of described embodiment of the present invention;
Figure 16 is the profile of base of LED that is used for the luminescent device of another embodiment of the present invention;
Figure 17 is the profile of the luminescent device of another embodiment of the present invention;
Figure 18 is the profile of the luminescent device of another embodiment of the present invention;
Figure 19 A is the profile of base of LED that is used for the luminescent device of another embodiment of the present invention, Figure 19 B is the flat sheet of the bottom view that is used for the base of LED, Figure 19 C is the profile of described luminescent device, and Figure 19 D is the profile of the improvement embodiment of described luminescent device;
Figure 20 A is the profile of base of LED that is used for the luminescent device of another embodiment of the present invention, Figure 20 B is the flat sheet of the bottom view that is used for the base of LED, Figure 20 C is the profile of described luminescent device, and Figure 20 D is the profile of the improvement embodiment of described luminescent device;
Figure 21 is the profile of another embodiment of the luminescent device of one embodiment of the present of invention;
Figure 22 is the profile of the luminescent device of another embodiment of the present invention;
Figure 23 is the profile of the luminescent device of another embodiment of the present invention;
Figure 24 is the profile of the luminescent device of another embodiment of the present invention;
Figure 25 is the profile of the luminescent device of another embodiment of the present invention;
Figure 26 is the profile of the luminescent device of another embodiment of the present invention;
Figure 27 is the profile of another embodiment of the luminescent device of one embodiment of the present of invention;
Figure 28 is the profile of the luminescent device of another embodiment of the present invention;
Figure 29 is the profile of the luminescent device of another embodiment of the present invention;
Figure 30 is the profile of the luminescent device of another embodiment of the present invention;
Figure 31 is the profile of the luminescent device of another embodiment of the present invention;
Figure 32 A is the profile of base of LED that is used for the luminescent device of another embodiment of the present invention, and Figure 32 B is the flat sheet of the bottom view of described base;
Figure 33 is the flat sheet of the bottom view of base of LED that is used for the luminescent device of one embodiment of the present of invention;
Figure 34 is the flat sheet of the bottom view of base of LED that is used for the luminescent device of another embodiment of the present invention;
Figure 35 A is the profile of base of LED that is used for the luminescent device of another embodiment of the present invention; Figure 35 B is the flat sheet of the bottom view that is used for the described base of LED;
Figure 36 is the flat sheet of the bottom view of base of LED that is used for the luminescent device of another embodiment of the present invention;
Figure 37 is the flat sheet of the bottom view of base of LED that is used for the luminescent device of another embodiment of the present invention;
Figure 38 is the flat sheet of the bottom view of base of LED that is used for the luminescent device of another embodiment of the present invention;
Figure 39 is the flat sheet of the bottom view of base of LED that is used for the luminescent device of another embodiment of the present invention;
Figure 40 A is the profile of the luminescent device of another embodiment of the present invention, and Figure 40 B is the perspective view of base that is used for the LED of described luminescent device;
Figure 41 A is the profile of the luminescent device of another embodiment of the present invention, and Figure 41 B is the perspective view of base that is used for the LED of described luminescent device;
Figure 42 is the profile of the luminescent device of another embodiment of the present invention;
Figure 43 is the perspective view of base of LED that is used for the luminescent device of another embodiment of the present invention;
Figure 44 is the perspective view of base of LED that is used for the luminescent device of another embodiment of the present invention;
Figure 45 is the profile of the luminescent device of another embodiment of the present invention;
Figure 46 A is the front view of base that is used for the LED of the luminescent device shown in Figure 45, and Figure 46 B is the profile of its E-E ' along the line;
Figure 47 is the profile of the luminescent device of another embodiment of the present invention;
Figure 48 is the profile from the luminescent device shown in the observed Figure 47 in right side;
Figure 49 A is the front view of base that is used for the LED of the luminescent device shown in Figure 47, and Figure 49 B is its right side view;
Figure 50 A is the diagrammatic sketch that is used for first plate luminescent device shown in Figure 47, that be used to conduct heat, and Figure 50 B is its right side view;
Figure 51 is the profile of the luminescent device of another embodiment of the present invention;
Figure 52 A is the front view of base that is used for the LED of the luminescent device shown in Figure 51, and Figure 52 B is the profile of its F-F ' along the line;
Figure 53 is the profile of the luminescent device of another embodiment of the present invention;
Figure 54 A is the front view of base that is used for the LED of the luminescent device shown in Figure 53, and Figure 54 B is the profile of its G-G ' along the line;
Figure 55 is the profile of the luminescent device of another embodiment of the present invention;
Figure 56 A is used for the front view of base of the LED of the luminescent device shown in Figure 55, and Figure 56 B is the profile of its H-H ' along the line;
Figure 57 A is the front view of base that is used for the LED of luminescent device according to an embodiment of the invention, and Figure 57 B is the profile of its I-I ' along the line;
Figure 58 A has the profile of the described luminescent device of the base that is used for LED along the line I-I ' of Figure 57 A, and Figure 58 B is the another profile along the line J-J ' among Figure 57 B;
Figure 59 A is the profile of base of LED that is used for the luminescent device of another embodiment of the present invention, and Figure 59 B is that it is mounted the profile under onboard the state, and Figure 59 C is the profile that is used to explain the process of making the multilayer pattern that is used to conduct heat; With
Figure 60 A is a kind of profile of luminescent device, and this luminescent device has and is installed in the lens that are used for fader control on the printed panel that is used to conduct heat, and Figure 60 B is a profile of being arranged to the fader control lens that separate with printed panel.
Embodiment
Explain the luminescent device of some embodiment of the present invention below with reference to accompanying drawing, wherein identical reference character is represented identical or corresponding components in whole some views.
Fig. 2 has shown the luminescent device 200 of embodiments of the invention.In luminescent device 200, be used for metallic plate 30 thermo-contacts of bottom 11 and circuit board 300 of the base 100 of LED.Base 100 has to be installed substrate 10 and is installed in light-emitting diode (LED) wafer of installing in the substrate 10 5, and described installation substrate has lead 12-14 and 15-17.LED wafer 5 sends wire harness along the direction that vertically shows the paper of Fig. 2 thereon.Circuit board 300 has metallic plate 30 and is used to form the metal pattern 41 of the electric conductor on electric insulation layer 40.LED wafer 5 has gallium nitride semiconductor.In this embodiment and following embodiment, LED wafer 5 has gallium nitride semiconductor, but is not limited thereto.
Base 100 has installs substrate 10, this installation substrate have be similar to cup recess to be used for that LED wafer 5 is installed in the central.It has step to form projection 11, and described protrusion-shaped is formed in its bottom surface and extends, and produced like this section of similar tee downwards.In addition, it has lead 12-14 and other lead 15-17 on base 100, along extending towards the bottom of getting out of a predicament or an embarrassing situation of described plate to right Fig. 2, lead 15-17 extends towards described bottom along the direction left Fig. 2 near the bottom of described cup lead 12-14 near the bottom of described cup.Base 100 has symmetric shape about the rotation around the axis of similar tee shape usually, but its shape is not limited thereto.For example, it can be a rectangle.
Join LED wafer 5 to bottom that the cup in the substrate 10 is installed with the pressing mold grafting material, and the part 12,15 that provides for the wiring in described electric lead is provided with line 6 two electrode (not shown) that are located on its top.
In addition, the part of the metallic plate 30 of circuit board 300 is exposed in a side of base 100, and by the base plane of the thermo-contact projection 11 relative with the end face that is used to install LED wafer 5, base 100 is installed to described expose portion.The base plane that substrate 10 is installed is called as thermo-contact part 1 hereinafter with the part that the described exposed region of metallic plate 30 contacts.Electric lead 12-14,15-17 join the pattern 41 of circuit board 300 to scolder 42.In this structure, heat-transfer path is provided for metallic plate 30 from substrate 10 is installed, thereby the heat that produces in LED wafer 5 can easily be directed into circuit board 300.In addition, be used for the reflow step of electrical connection of the electrical pattern 41 of circuit board 300 by use, manufacture process can be simplified, and wherein thermo-contact can be formed at simultaneously and install between substrate 10 and the circuit board 300 to improve heat transfer efficiency.By on the plane of the installation substrate 10 relative, forming metal level, and, can further improve heat transfer efficiency by joining it described exposed region of metallic plate 30 to scolder with metallic plate 30.This also is applicable to other embodiment of explanation subsequently.
Fig. 3 has shown the luminescent device 201 of another embodiment of the present invention.This luminescent device 201 is similar to the luminescent device 200 of first embodiment, and difference is that the installation substrate 10 of base 101 has the flat top that is used to install LED wafer 5.For example, when base 101 was difficult to have recess on the top board of installation substrate 10, if for example it is by the ceramic material manufacturing, perhaps when it need not have recess on top board, the base of the type can be used to install LED wafer 5.
Fig. 4 has shown the luminescent device 202 of another embodiment of the present invention.In luminescent device 202, base 102 is installed on the circuit board 302, and wherein LED wafer 50 is installed in with facing down and installs in the substrate 10 (flip-chip joint).Installation substrate 10 has and does not have outstanding flat floor, and circuit board 302 has projection 31 at exposed region.Joint between base 102 and the circuit board 302 or the like is similar to above-mentioned luminescent device.
The explained later LED wafer 50 and the installation that faces down thereof.LED wafer 50 has in succession stack transparent crystal plate 60 thereon, n type semiconductor layer 61, and p type semiconductor layer 64, and be formed at electrode 62,65 on the described semiconductor layer.In addition, electric insulation layer 67 and metal level 68 are formed on the p type semiconductor layer 64 in succession.By being placed in transparent crystal plate 60 top electrode 62,65 is placed in following (facing down), LED wafer 50 is installed on the cup that substrate 10 is installed.
Bottom at the cup that substrate 10 is installed except electric lead 12,15, forms false pattern 18.Grafting material 63,66,69 is set on the pattern of bottom in advance to be used to make the electrode engagement of they and LED wafer 50.N type semiconductor layer 61 and electrode 62 and the grafting material of installing between the pattern 12 in the substrate 10 63 are electrically connected.P type semiconductor layer 64 and electrode 65 and the grafting material of installing between the pattern 15 in the substrate 10 66 are electrically connected.In addition, the 68 usefulness grafting materials 69 of the metal level on the LED wafer are connected with false pattern 18 on substrate 10 is installed.
Grafting material 63,66,69 for double-screw bolt protuberance by such as gold or the such metal manufacturing of alloy, perhaps for bump by the scolder manufacturing.By using such grafting material, the thermal bonding between LED wafer 50 and the installation substrate 10 can be enhanced and surpass wire-bonded, thereby can improve heat transfer efficiency.For each electrode 62 and 65, grafting material can be one, but by for each electrode provides a plurality of grafting materials, can further improve heat transfer efficiency.
If the opening of the essential regions that is used to engage is formed on the electrode and the insulating barrier that forms on semiconductor layer, the possibility that shortens between the grafting material can be reduced, thereby can use more grafting material.Select as another, the part of insulating barrier 67 is metallized to form and other electrode 62 and 65 metal levels 68 that insulate, and except the joint that is used for other electrode 62,65, can increase the size in the described zone that is used to engage, and this has strengthened thermo-contact.
Fig. 5 A is the profile of base 103 of LED that is used for the luminescent device 203 of another embodiment of the present invention, and Fig. 5 B is the profile of luminescent device 203.Base 103 has a kind of structure, substrate 10 wherein is installed has through hole 20, and the bottom of the recess of described through hole from the top that is used to install LED wafer 50 extends to the base plate that substrate 10 is installed.The size of through hole 20 increases towards the bottom that substrate 10 is installed, and metal level 21 usefulness are welded or similar approach is formed on the inner surface of through hole 20, and this is similar to pattern.When base 103 was installed to circuit board 303, the metal level 21 usefulness scolders 43 on the through hole 20 were connected to the exposing metal zone of the metallic plate 30 of circuit board 303.In this structure, because the heat that produces in LED wafer 50 is higher than the metal level 21 of conventional mounting substrate towards circuit board 303 conduction by pyroconductivity.So, can further improve heat transfer efficiency.
Fig. 6 has shown the luminescent device 204 of another embodiment of the present invention, and described luminescent device has the installation substrate 10 that contains through hole 20.Luminescent device 204 is different with the luminescent device 203 shown in Fig. 5 A and the 5B, and reason is that base 104 has projection 11 in its bottom.The metallic plate 30 of circuit board 300 has smooth exposed region.Also can in this structure, realize with the previous embodiment confers similar advantages.
Fig. 7 has shown the base 105 of another embodiment of the present invention, and this base has the through hole that is full of filler 23, and described filler for example is copper, silver or scolder, and it has than the higher pyroconductivity of substrate 10 is installed.Therefore, compare with the luminescent device shown in 6, can further improve heat transfer efficiency with Fig. 5 A, 5B.
Fig. 8 has shown the luminescent device 206 of another embodiment of the present invention.The base 106 of luminescent device 206 is similar to the installation substrate 10 of the base 102 shown in Fig. 4, and difference is to be formed at for the recess 19 of alphabetical V-arrangement the bottom of the installation substrate 10 of base 106.Circuit board 302 is similar to the circuit board 302 shown in Fig. 4, and difference is that it has the protrusion 32 of metallic plate 30 of the circuit board 302 of similar alphabetical V, and this protrusion is corresponding with recess 19.The recess 19 that is fitted to base 106 by the protrusion 32 with metallic plate 30 is made luminescent device 206.In this structure, can increase the contact area of installing between substrate 10 and the metallic plate 30.So the thermo-contact between them becomes reliably, the thermal resistance between them is reduced, and the heat transfer efficiency that is used for LED wafer 50 is enhanced.In addition, can in the step that base 106 is installed to circuit board 306, easily carry out the aligning of base 106 and circuit board 306.
Fig. 9-12 has shown four types luminescent device 207-210 according to still another embodiment of the invention, and described luminescent device has different combinations on the structure of the thermo-contact between base and the circuit board.At first, in the luminescent device shown in Fig. 9 207, the position of the projection in the luminescent device shown in Fig. 2 is reversed.That is to say that in the luminescent device shown in Fig. 2 200, the exposed region of the metallic plate 30 of circuit board 308 is smooth, and in luminescent device 207, exposed region has projection 31, this projection contacts with the flat bottom that substrate 10 is installed.In this case, compare with the counter pair in the luminescent device 200 shown in Fig. 2, the distance between LED wafer 5 and the metallic plate 30 shortens, and has therefore improved heat transfer efficiency.
On the other hand, in the luminescent device shown in Figure 10,11 and 12 208,209 and 210, one that installs in the exposed region of the bottom surface of substrate 10 and metallic plate 30 has projection, and another has recess, and shown in the adaptive described recess of projection.It should be noted that luminescent device 209 and 210 has the structure of two combinations of band projection and recess, wherein projection and recess further have inner recess or projection.Be fitted in these structures of projection (one or more) at recess (one or more), can in manufacture process, carry out the aligning between base and the circuit board more accurately, keep heat transfer efficiency simultaneously.
In luminescent device shown in Figure 11 209, recess 33 is formed in the projection 31 of metallic plate 30, and the recess 33 of metallic plate 30 is fitted to the projection 11 that substrate 10 is installed.In this structure, therefore the thermocontact area in the thermo-contact district 1 between the installation substrate 10 of circuit board 309 and base has further improved heat transfer efficiency greater than the situation in the luminescent device shown in Figure 10 208.
Luminescent device 210 shown in Figure 12 has the structure of the luminescent device 208 that is similar to shown in Figure 10, and difference is that recess is formed at the projection 31 to be fitted to metallic plate 30 in the projection 11 that substrate 10 is installed.Therefore, be similar to luminescent device 208, the contact area between metallic plate 30 and the installation substrate 10 is greater than the situation of luminescent device 208, and the distance between LED wafer 5 and the metallic plate 30 is shorter, has therefore further improved heat transfer efficiency.
Figure 13 has shown the luminescent device 211 of another embodiment of the present invention.In luminescent device 211, the projection 11 in the luminescent device 200 shown in Fig. 2 is had the metallic plate 25 of higher pyroconductivity and is replaced.Therefore, compare with the luminescent device 200 shown in Fig. 2, thermal resistance is reduced to improve heat transfer efficiency.As another selection, circuit board 300 can have thin dielectric layer (for example thickness is equal to or less than about 100 microns) and one deck is formed with scolder, silver paste etc. with alternative metals plate 25.
Then, Figure 14 and 15 has shown the application of above-mentioned luminescent device.Figure 14 has shown that an above-mentioned luminescent device 208 is applied to backlight liquid crystal display, luminous component of traffic signals or the like.In order to send the light of desired color, the LED wafer 5 that is used to send predetermined color is selected, and it and comprise 81 combinations of fluorescent materials element, shown in fluorescent element have the function of converting colors.Light with desired color is obtained by LED wafer 5 and fluorescent element 81, and it enters guide plate 82 being directed to towards the display part (not shown), and is launched into space outerpace.
In addition, in application shown in Figure 15, obtain light with the luminescent device 208 of above-mentioned fluorescent element 81 combinations, described light enters the optics 83 with lens component 84, and by the light of lens component 84 polymerizations along the predetermined direction transmission.
Figure 16 has shown the base 114 of the luminescent device that is used for another embodiment of the present invention.In the foregoing description of as shown in Figure 4 base with ventricumbent LED wafer, grafting material 69 and other electrode 65 electric insulations.In base 114, grafting material 69 is connected to the part that the electrode 65 on the p type semiconductor layer 64 extends.In this structure, do not need new electrode to connect grafting material 69, simpler thereby manufacture process becomes.
Figure 17 and 18 has shown the base 115,116 of the luminescent device 215,216 that is used for another embodiment of the present invention.These luminescent devices have dissimilar bases.The electric lead that substrate 10 is installed does not extend, thereby has the section of the metal pattern 41 that is parallel to circuit board 300.
In luminescent device shown in Figure 17 215, be connected to the metal pattern 41 of circuit board 300 by the electric lead 13,16 that substrate 10 will be installed with scolder 42, base 115 is installed to circuit board 300.Base 115 engages with scolder 42 in its both sides, and in luminescent device shown in Figure 2 200, base 100 engages with scolder 42 in its bottom surface.Because base 115 does not have electric lead in its bottom, so manufacture process becomes simpler.In addition, owing to do not have weld layer to be present between base 115 and the circuit board 300, so the size of luminescent device can not change because of weld layer.So, can accurately be arranged on the size on this direction, and the reliability of thermo-contact becomes higher.
In luminescent device shown in Figure 17 215, the top that substrate 10 is installed has towards circuit board 300 plane inclined, and electric lead 12,15 extends thereon.Similar with the base shown in Figure 17, there is not weld layer to be present between base 115 and the circuit board 300, simpler thereby manufacture process becomes.In addition, because the top of base is uneven and its shoulder becomes lower, therefore can reduce to be used to install the material usage of substrate, and the size of luminescent device can not change because of weld layer.
Then explain the modification of the foregoing description.In the luminescent device shown in Fig. 5 and 6 203 and 204, thermo-contact district 1 usefulness scolder between the exposed region of base and metallic plate connects, and base contacts with the exposed region of metallic plate at 1 place, thermo-contact district and do not have an intermediary element between them in other luminescent device.In other luminescent device, metal level can be formed at the bottom that substrate is installed, and base can be connected to the exposed region of metallic plate with scolder.So can further increase heat transfer efficiency.In manufacture process, can be in the reflow step of the electrical connection that is used for pattern simultaneously at hot joining synapsis formation weld layer.
When in the thermo-contact district 1 when forming weld layer, preferably, the position in described thermo-contact district is lower than the height of the pattern 41 of circuit board.For example, in luminescent device shown in Figure 2 200, when the thermo-contact district is soldered, can prevent that pattern 14 and 17 is by short-circuited with solder.In the luminescent device shown in Figure 10 and 12 208 and 210, still be lower than the insulating barrier of circuit board 309,310 in outermost contact portion, it is hereby ensured the short circuit that prevents at the hot joining synapsis.
Then explain a series of luminescent devices, its place, plane in the installation substrate 10 of the base that contacts with the metallic plate 30 of circuit board has one or more grooves.In background technology, the part of energy is output as the light that p and n layer from the LED wafer send as mentioned above, but its major part is converted into heat.The a part of heat that produces in the LED wafer is passed to the outside with convection current and thermal-radiating form, but its major part is transmitted to the installation substrate by grafting material or similar material, and further arrive circuit board, and distribute from the surface of circuit board by scolder in its bottom.
In above-mentioned conducting path, thermal resistance maximum in installation substrate with low-thermal conductivity (0.3-10W/mK).Thermal resistance is directly proportional and is inversely proportional to pyroconductivity with thickness in the installation substrate of thickness direction.Therefore, it is little preferably to be lower than the thickness of installation substrate of LED wafer.Yet, be lower than the installation substrate of LED wafer or main conducting path thickness reduce make it be difficult to form substrate is installed.In addition, this has reduced to install the intensity of substrate, is easy to break in the LED wafer being installed to the manufacturing step that substrate is installed thereby substrate is installed.Install in the substrate so one or more groove shaped as described below is formed in, thereby can easily form the installation substrate, keep its intensity simultaneously, and can significantly reduce the thermal resistance that substrate is installed.
Figure 19 A-19D has shown first example that has the luminescent device of groove in the substrate installing.In this example, on the bottom that substrate 10 is installed, provide a plurality of grooves (recess) in parallel with each other.As shown in Figure 19 A and 19B, LED wafer 50 usefulness joint elements 51 are installed on the bottom of recess at top of the installation substrate 10 that is formed at base 117 (flip-chip) with facing down.Substrate 10 is installed for example by the aluminium oxide manufacturing, and has projection 11 in its bottom.As shown in Figure 19 B, three grooves 7 are formed at the central authorities of projection 11 abreast.For heat radiation effectively, groove 7 is oriented to pass regional 50a, and this zone is the projected image of LED wafer 50 in vertical direction.That is to say that the average thickness that is lower than the installation substrate 10 of LED wafer 50 becomes littler, perhaps be reduced in this regional thermal resistance.
When base 117 was installed on the circuit board 300, as shown in Figure 19 C, weld layer 7 was formed between the top of bottom that substrate 10 is installed and circuit board 300.Weld layer 30 also is full of groove 7, thereby by providing weld layer 7 further to reduce average thermal resistance between LED wafer 50 and the metallic plate 30.
Has the structure of above-mentioned groove 7 by use, even, also can when keeping intensity, reduce thickness for by installation substrate such as the so more crisp made of aluminium oxide.In addition, for example can use the more copper facing of high thermoconductivity (313W/mK) to form metallic film.Can be by (pyroconductivity 50W/mK) is filled into and further thermal resistance is reduced to bigger degree in the groove 7 with scolder.Because the thermal resistance that is lower than the installation substrate 10 of LED wafer 50 as main conducting path is reduced, so the temperature of LED wafer 50 rises and can be reduced.Sedimentation or similar approach can be used to form metallic film.Metallic film can be higher than the analog manufacturing of substrate 10 being installed and having the good humidity that is used to engage by copper, gold, silver or pyroconductivity.By copper film or similar film are provided on the surface of groove 7, are convenient to heat and are delivered to metallic plate 30 from substrate 10 is installed.The filler that is used for filling groove 7 as the auxiliary material that are used to conduct heat is not limited to above-mentioned scolder.For example, can use pyroconductivity to be higher than silver paste, silicones or the analog that substrate 10 is installed.The auxiliary material that are used to conduct heat can be welded wire, for example weld copper cash.
As shown in Figure 19 D, groove 7 can have sidewall, has the space between described sidewall, and this space increases from the bottom to its opening.Because groove 7 broadens towards its opening, therefore compare with the groove shown in Figure 18 C, be convenient to heat from the metallic plate 30 that substrate 10 is delivered to circuit board is installed.In addition, in this structure of groove 7, can be filled in the groove 7, suppress the generation of bubble simultaneously such as the such filler of scolder.Therefore, this structure helps improving heat transfer efficiency.
Figure 20 A-20D has shown the modification example of above-mentioned luminescent device.Base 17 shown in Figure 19 has projection 11 under installation substrate 10, this projection is similar to the base 100 shown in Fig. 2, and the base 118 that does not have this example of projection simultaneously can have groove 7 in the bottom that substrate 10 is installed.As shown in Figure 20 A and 20B, groove 7 can be formed on the whole bottom abreast.
When base 118 is installed on the circuit board 300, shown in Figure 19 C, circuit board 300 can have thin dielectric layer 40 (for example being equal to or less than about 100 microns), except with the scolder 42 that is used for conducting shell engages, by the weld layer 43 that uses welding to form, base 118 can be directly mounted on the metallic plate 30 of circuit board 300.
As another selection, when base 118 was installed on the circuit board 300, the plate 300 with the projection shown in Fig. 4 can be used to contact the bottom that substrate 10 is installed.As another selection, as shown in Figure 20 D, have and the hardware 25a of the projection that groove 7 is adaptive can be inserted into and installs between substrate 10 and the metallic plate 30.
Then, explain the Simulation result of on luminescent device, conducting with the base 117,118 that contains above-mentioned groove 7.Carry out conduction analog under three kinds of situations, wherein the heat condition of LED wafer keeps identical with ambient temperature.Under first kind of situation, groove is not set on the bottom that substrate 10 is installed; Under second kind of situation, groove 7 is set between them equidistantly to be installed in the substrate 10; Under the third situation, groove 7 is set to be installed in the substrate 10, thereby the cumulative volume in space is identical with second kind of situation in the groove, but groove 7 only is set under the grafting material of LED wafer 5.The temperature that analog result has shown LED wafer 5 is according to first kind of situation, and the order of second kind of situation and the third situation is successively decreased.If the temperature of the LED wafer 5 under first kind of situation is configured to 100, it is reduced to 83 under second kind of situation, be reduced to 77 under the third situation.Therefore, can find further to improve heat transfer efficiency, and the temperature of LED wafer 50 rises and can be reduced if groove 7 only is set under the grafting material 51 of LED wafer 50.
Figure 21 has shown the luminescent device of the another embodiment of the present invention with groove structure.In described luminescent device only the degree of depth that had of the groove under joint element 51 7 greater than other situation.In this structure of groove 7, only the thickness of the installation substrate 10 under LED wafer 50 can further be reduced and not reduce to install the intensity of substrate 10.So 30 thermal resistance can further be reduced from LED wafer 50 to metallic plate, and the temperature of LED wafer 50 rises and can be lowered.
Figure 22 has shown the luminescent device of the another embodiment of the present invention with groove structure.In described luminescent device, groove 7 is arranged such that only the groove under joint element 51 7 has the darkest degree of depth, and the groove of contiguous simultaneously one of them groove with the darkest degree of depth is along with increasing gradually from the increase of the distance of described described one of them groove with the darkest degree of depth.Be similar to the luminescent device shown in Figure 21, only the thickness of the installation substrate 10 under LED wafer 50 can further be reduced and not damage the intensity that substrate 10 is installed.So 30 thermal resistance can further be reduced from LED wafer 50 to metallic plate, and the temperature of LED wafer 50 rises and can be lowered.
Figure 23 has shown the luminescent device of the another embodiment of the present invention with groove structure.In described luminescent device, wide recess 71 is set in the bottom of the installation substrate 10 under the LED wafer 50, and groove 7 is set at the inside of the recess 71 under the grafting material 51 that is used for LED wafer 50.Because the counter pair among depth ratio Figure 22 of recess 71 broads and groove 7 is shallow, so scolder is easier enters and filling groove 7.
Figure 24-27 has shown the luminescent device of the another embodiment of the present invention with groove structure and a plurality of LED wafers 50.In described luminescent device, LED wafer 50 is installed in located adjacent one anotherly installs substrate 10 ground central authorities, simultaneously in the installation substrate 10 that groove (or recess) 7 is set under the LED wafer 50.In luminescent device shown in Figure 24, groove 7 has identical size.In luminescent device shown in Figure 25, for the central LED wafer 50 among a plurality of LED wafers 50, the degree of depth of groove 7 is the darkest, and shoals according to the distance from the drop-center that is used for central LED wafer 50 in its both sides.In luminescent device shown in Figure 26, be provided with a plurality of grooves of narrow width for each LED wafer 50, and for central LED wafer, the quantity and the density of the groove under LED wafer 50 become the highest.In addition, the luminescent device shown in Figure 27 has the groove 7 that is similar to shown in Figure 25 and 26, but the groove that is used for central LED wafer 50 has the highest density and the darkest degree of depth.So central LED wafer 50 can dispel the heat effectively, thereby can make the uniformity of temperature profile of LED wafer 50.
Figure 28-31 has shown the luminescent device with another embodiment of the present invention, and described luminescent device has and is similar to the groove structure shown in Figure 24-27, but has the mounted LEDs of facing up wafer 55.Use such as pressing mold joint element or the such grafting material 57 of coating LED wafer 55 is installed.With the electrical connection of wire-bonded execution to the electrode 56 of LED wafer 55.In described luminescent device, the advantage that the structure of groove 7 has is to make uniformity of temperature profile and heat radiation effectively, is similar to above-mentioned luminescent device.
Figure 32 A and 32B have shown the base 119 of the another embodiment of the present invention with groove structure.In base 119, as shown in Figure 32 B, groove 7 is formed on its bottom (or rear portion) at vertical and horizontal direction.When base 119 was installed on the circuit board 300, scolder or analog were inserted between the bottom and circuit board of base 119, and as shown in above-mentioned Figure 20 D, it is filled in the groove 7.
In the structure that substrate 10 is installed, only to compare with its further groove 7 shown in 20 with Figure 19 along the counter pair that a direction is arranged, groove 7 can vertically and laterally form with higher density, does not reduce to install simultaneously the intensity of substrate 10.In addition, heat can be dispersed into circuit board 30 from LED wafer 50 effectively, and the temperature of LED wafer 50 can further be reduced.In addition owing to simultaneously vertically and laterally form groove 7, when scolder 53 is filled in the groove 7 air can be easily from the side leakage of projection.Therefore, can more easily scolder be filled in the groove 7.In addition, because the pyroconductivity of scolder 43 is higher than substrate 10 is installed, so heat can be distributed effectively.If LED wafer 50 is installed on the intersection point of vertical and transverse concave groove, can more effectively conduct heat.
Figure 33 has shown the base of the another embodiment of the present invention with groove structure.Groove 7 is set radially to be extended with the central authorities from projection 11 that substrate 10 is installed.Although in this example, only have a LED wafer (not shown) to be installed on the regional 50a of central authorities of projection 11, a plurality of LED wafers also can be installed.When a plurality of LED wafers were mounted, they can radially be mounted from optical viewpoint.In this case, when above-mentioned radial groove 7 is formed, can reduce to be positioned at the thickness of the installation substrate 10 under the central LED wafer among them only.So, promoted heat transfer, and can reduce the mean temperature of LED wafer from the LED wafer to metallic plate.
Figure 34 has shown the base of the another embodiment of the present invention with groove structure.Groove 7 is formed thick and fast in some zones, and loosely is formed in other zone of the bottom that substrate 10 is installed.Especially, groove 7 is formed thick and fast at middle section, thereby can reduce the only thickness of the installation substrate 10 under the LED wafer, and promotes the heat transfer from the LED wafer to printed panel.
Figure 35 A and 35B have shown the base 120 of the another embodiment of the present invention with groove structure.Deep hole 72 is formed at the bottom that substrate 10 is installed in the zone that only is under the joint element that is used for LED wafer 50, and groove 7 vertically and laterally forms by hole 72.Scolder is filled in the groove 7 and hole 72 between the metallic plate of bottom that substrate 10 is installed and printed panel (not shown).The quantity in groove 7 and hole 72 and their position relation are not limited to the example shown in Figure 35 A and the 35B.Because deep hole 72 is formed in the said structure under the LED wafer to be used for the main heat-transfer path of LED wafer, therefore, can reduce just to be in the thickness of the installation substrate 10 under the LED wafer.So, promoted heat transfer, and can reduce the temperature of LED wafer from the LED wafer to metallic plate.
Figure 36 has shown the base of the another embodiment of the present invention with groove structure.Groove 7 radially extends from the central authorities of the projection 11 of installation substrate 10, and other groove 7a is formed on the projection 11 with one heart.When a plurality of LED wafers were mounted, they can radially be mounted from optical viewpoint.In this example, above-mentioned groove 7,7a radially form to be installed on the regional 50a around each LED wafer.So, can reduce just to be in the thickness of the installation substrate 10 under the LED wafer (one or more).So, promoted heat transfer, and can reduce LED wafer (one or mores') temperature from LED wafer (one or more) to circuit board.
Figure 37 has shown the base of the another embodiment of the present invention with groove structure.Groove 7 radially forms to be installed on the regional 50a around each LED wafer.So, when a plurality of LED wafers are mounted, can receive the thickness of the installation substrate 10 that just is under the LED wafer.So, promoted heat transfer, and can reduce the temperature of LED wafer from the LED wafer to circuit board.
Figure 38 and 39 has shown the base of the another embodiment of the present invention with groove structure.In base shown in Figure 38, helical groove 7 is formed on the projection 11 on the bottom that substrate 10 is installed, and on base shown in Figure 39, and groove 7 is formed on the projection 11 on the bottom that substrate 10 is installed circuitously.When base was installed on the metallic plate of circuit board (not shown), the weld layer that is used to engage was inserted between base and the metallic plate.
In the groove shown in Figure 38 or 39, the auxiliary material that can be used as the promotion heat transfer such as the such welded wire of welding copper cash are inserted into wherein.Metal wire or copper cash have to be higher than installs substrate 10 and the pyroconductivity that is higher than scolder.Therefore, by inserting described line, can reduce thermal resistance more.Owing to only have a groove shaped to be formed in the bottom of the projection 11 that substrate 10 is installed, therefore easily described line be inserted in the groove 7.
Figure 40 A and 40B have shown the base 121 of the another embodiment of the present invention with groove structure.Two recesses (groove) 73 the external parallel that only is in the zone under the LED wafer 50 be formed at the bottom that substrate 10 is installed.The weld layer 43 that is used to engage is inserted between the metal level 30 that substrate 10 and circuit board 300 are installed.In having this structure of recess 73, the surface of edge installation substrate 10 is elongated to the length that electrically contacts (scolder 42) the pattern 41 of lead and circuit board 300 from thermo-contact (weld layer 43), thereby can prevent the electrical short between them.
Figure 41 A and 41B have shown the base 122 of the another embodiment of the present invention with groove structure.Recess 74 forms the recess 73 that is similar to shown in Figure 40 A and the 40B, but has than its bigger size.As shown in Figure 41 A, two planes that recess 74 has a bottom surface and extends between the opening of described bottom surface and recess 74, and the width of described recess broadens towards its opening.
In structure with recess 74, be similar to the base shown in Figure 40 A and the 40B, surface along installation substrate 10 is elongated to the length that electrically contacts (scolder 42) the metal pattern 41 of lead and circuit board 300 from thermo-contact (weld layer 43), thereby can prevent the electrical short between them.In addition, the zone that is used to conduct heat is broadened, and has promoted heat transfer.In addition, because the difference in thickness of installation substrate 10 is not too big, therefore can adopts injection moulding easily to manufacture three-dimensional circuit board, and can reduce the consumption of the material that is used for injection moulding in the installation substrate 10 shown in Figure 41 A and the 41B.
Figure 42 has shown the base 123 of the another embodiment of the present invention with groove structure.Substrate 10 is installed has and be similar to, and metal level 74a is formed on the side plate in the recess at the recess shown in Figure 41 A and the 41B (groove 74).Can be by forming metal level 74a with silver or such as copper or other such metal deposition of nickel.As another selection, can use white paint.So except the above-mentioned advantage on the base shown in Figure 41 A and the 41B, advantageously a part or all light of mounting layer 10 is sent and is delivered in metal level 74a reflection by LED wafer 50.Therefore, can be gathered end face, be used radiative efficient thereby can increase along the diffused light of lateral.
Figure 43 has shown the base 124 of the another embodiment of the present invention with groove structure.Substrate 10 is installed has the recess 74 that is similar to shown in Figure 41 A and the 41B.In addition, form pore 75 at upper edge, the bottom surface lateral that substrate 10 is installed from inside to the side that substrate 10 is installed of recess 74.So, can further promote because of pore 75 to conduct heat at lateral.
Figure 44 has shown the base 125 of the another embodiment of the present invention with groove structure.Substrate 10 is installed to have and is similar at recess shown in Figure 43 74 and pore 75.In addition, vertically form pore from the inside of recess 74 to the top that substrate 10 is installed.So, can further improve because of pore and conduct heat in vertical direction.
Can revise the foregoing description in every way.For example, LED wafer and the installation substrate in base are not limited to wire-bonded, upside-down mounting etc.In the above-described embodiment, substrate is installed by the aluminium oxide manufacturing, but it also can be by pottery that is different from aluminium oxide or resin manufacture.The filler that is used for groove is not limited to scolder, also can use pyroconductivity to be higher than to install substrate such as silver paste or the such material of silicones.In addition, the quantity of the quantity of groove and LED wafer also is not limited to the example shown in the foregoing description.
Below among the embodiment that will explain, in order further to improve heat transfer efficiency, except the thermo-contact between base and the circuit board, also having increased the additional path that is used to conduct heat.So can further increase the injection current that is used for the LED wafer.
Figure 45 has shown luminescent device according to still another embodiment of the invention, and Figure 46 A and 46B have shown the structure of the base 126 that is used for the luminescent device shown in Figure 45.Luminescent device shown in Figure 45 has the first plate 30a that provides for heat transfer and the one or more bases 126 between the second plate 30b is provided all.As shown in Figure 46 A and 46B, base 126 has the installation substrate 10 that has lead 12,15 and is installed in the LED wafer of installing in the substrate 10 5.Substrate 10 is installed has recess 435, and two electric leads 12,15 are formed in the recess 435 and install on the end face of substrate 10 at its top.The shape that substrate 10 is installed is not limited to the situation shown in Figure 46 A and the 46B.For example, it can have smooth top plan.LED wafer 5 is connected to lead 12,15 in the bottom of recess 435 with the grafting material between them 434, and as shown in Figure 46 B, and base 126 is installed in the luminescent device as shown in Figure 45.
First plate 30 is above-mentioned circuit boards, and it has metallic plate 411, insulating barrier 412 and is formed at metal pattern on the insulating barrier 412.Be used as the circuit zone 432 that is used to be electrically connected at the two ends that the electric lead 12,15 on the end face of substrate 10 is installed with as positive pole and negative terminal.The circuit of base 126 zone 432 is connected with the pattern 413 usefulness scolders 415 of the first plate 30a.The part of the plate 30a relative with LED wafer 5 has the opening 410 corresponding to recess.The device that the incident light wavelength is changed in such being used for such as fluorescent material can be arranged on described opening.
The second plate 30b is by the metallic plate manufacturing.Electric insulation circuit zone 436 is used for being welded on (back) plane, the end that substrate 10 is installed, and it joins the second plate 30b to scolder 425.The second plate 30b has thermal conduction portions 424, and this thermal conduction portions has the relative plane with the first plate 30a.The thermal conduction portions 424 contacts first plate 30a of the second plate 30b perhaps preferably is attached thereto with welding.Thermal conduction portions 424 can be used as individual component and is provided with, and to engage with the first and second plate 30a and 30b with scolder or analog, perhaps can be the first or second plate 30a, the part of 30b.In addition, thermal conduction portions 424 can or engage with the contacts side surfaces of base 126.
In structure shown in Figure 45, the heat of consumption in substrate 10 is installed also distributed by the second plate 30b except by the described first plate 30a of embodiment is distributed as described above.Therefore, compare, can further reduce the temperature of LED wafer 5 with the luminescent device shown in Fig. 2.If substrate 10 is installed by such as the such ceramic material manufacturing of aluminium nitride with high thermoconductivity, so more effectively heat conduction, and can reduce the temperature of LED wafer 5 more.
In structure shown in Figure 45, two plate 30a, 30b that are used to conduct heat be installed on the base (one or more) 126 and under, but the setting of plate 30a and 30b is not limited to this example.
If it for example is molded-interconnect-device (MID) plate that substrate 10 is installed, so in the extension of lead without limits.Therefore, according to the requirement on the employed space of luminescent device, described two plates that are used to conduct heat for example can be arranged on the correct position on two planes or back plane and the side plane.This also is applicable to the following embodiment of explanation below.
In addition, the quantity that is used to the plate that conducts heat is not limited to two.In example shown in Figure 45, third and fourth plate that is used to conduct heat can further be arranged on the both sides of base 126.This has further promoted heat transfer, and further reduces chip temperature.
Figure 47 has shown luminescent device according to still another embodiment of the invention, and Figure 48 has shown the section of the observed luminescent device in right side in Figure 47.In addition, Figure 49 A, 49B and 50A, 50B have shown the structure of the base 127 and the first plate 30a of the heat transfer that is used for the luminescent device shown in Figure 47 respectively.
The luminescent device of this embodiment is similar to the luminescent device shown in Figure 45 and 46, the difference be following some.As shown in Figure 50 A and 50B, by removing the part of insulating barrier 412, the part of the metallic plate 411 of the first plate 30a is exposed, and does not perhaps form conductive pattern on it, thereby makes metallic plate 411 contacts that the top of substrate 10 is installed.As shown in Figure 49 A and 49B, groove 437 is formed at the top of mounting plane 10, and the circuit 432 that will extend to electric lead 12,15 is formed in the groove 437.Pattern 413 is formed on the part of the first plate 30a to be fitted to the groove 437 on the plane, top that substrate 10 is installed.The pattern 413 of circuit zone 432 usefulness solder bonds to the first plate 30a.The first plate 30a joins the pattern 438 that forms at the top that substrate 10 is installed to scolder 416.
Similar with previous embodiment, the plate 30a relative with LED wafer 5 has opening 410.In addition, if the second plate 30b is the metallic plate that pyroconductivity is higher than circuit board, the heat of diffusion can further be spread in the installation substrate 10 of ceramic material manufacturing so, and the temperature of LED wafer 5 can further be lowered.
Because the metallic plate of the described plate that is used for conducting heat contacts or engages with base 127, therefore can more effectively conduct heat, and LED wafer 5 ground temperature can further be lowered.In addition, because circuit board is used to conduct heat, therefore can increase the degree of freedom that base is electrically connected.
Figure 51 has shown luminescent device according to still another embodiment of the invention, and Figure 52 A and 52B have shown the base 128 of luminescent device.The installation substrate 10 of base 128 has by the sandwich construction of flat board manufacturing and has electric lead 12 and 15.Yet the shape that substrate 10 is installed is not limited to the plane, and it can be the plate with recess or analog.As shown in Figure 52 B, electric lead 12 and 15 extends to internal layer from the top that substrate 10 is installed by through hole 12a, 15a and further extends to its side and the part of the bottom of installation substrate 10.Be formed for being welded on circuit zone 436 on the bottom that substrate 10 is installed and be formed at the bottom of base 128 and join pattern 413 on the first plate 30a to, but electric insulation.LED wafer 5 is equipped with grafting material 434 on the electric lead 12,15 that substrate 10 is installed.
The first plate 30a has metallic plate 411, insulating barrier 412 and is formed at metal pattern 413 on the described insulating barrier 412.Do not have the part of conductive pattern insulating barrier formed thereon 412 by removal, the part of the metallic plate 411 of the first plate 30a is exposed, thereby makes the metallic plate contact that the end face of substrate 10 is installed.The first plate 30a joins the electric line of locating in the baseplane that substrate 10 is installed 436 to scolder 416.In addition, join the circuit 432 at an end place of the pattern 413 of installation substrate 10 to scolder 415 in the circuit zone of an end of the pattern 413 of the first plate 30a.
The second plate 30b that is used to conduct heat is the metallic plate by copper production, and it is engaged to the end face that substrate 10 is installed in this embodiment.This metallic plate still is not limited thereto by copper production.Opening 420 is set in the part of the second plate 30a relative with LED wafer 5.Preferably the sidepiece of opening 420 is tapered, but is not limited to taper.In this example, silver is deposited on the surface of described tapering part, and silverskin is polished.If substrate 10 is installed by the ceramic material manufacturing, so preferably tungsten metallization is for example used on the plane that contacts with the second plate 30b, and this metalized portion that is used to conduct heat can directly be engaged and need not be welded to the second plate 30b.
Still in this example, the heat of diffusion is conducted through the metallic plate with high thermoconductivity in by the mounted substrate 10 of the ceramic material manufacturing of high thermoconductivity, thereby can further reduce the temperature of LED wafer 5.In addition, because pattern 413 can be formed at the both sides of the first plate 30a relative with base 128, second plate that is fixed to external equipment usually can not have pattern.So advantageously the electric insulation design has high-freedom degree.
Figure 53 has shown luminescent device according to still another embodiment of the invention, and Figure 54 A and 54B have shown its base 129.Circuit board 30a with metallic plate 411, insulating barrier 412 and pattern 413 is set at the bottom surface of base 129.Recess 435 and groove 437 are formed on the top of base 129, and electric lead 12,15 is formed on the bottom of groove 437 and recess 435.Because the lead 12 and 15 that is formed on the base 129 is formed in the groove 437, they can not contact the second plate 30b.Metallic plate as the second plate 30b has opening 420, and this opening has and the about identical size of the opening of LED wafer 5 recess 435 mounted thereto.The lid 426 of the made of the incident light wavelength of sending by transparent material or such as the such conversion LED wafer 5 of fluorescent material can be arranged in the opening 420 of the second plate 30b, and perhaps it can be used as the element of laying fluorescent material.
In this embodiment, the installation substrate 10 of the heat that produces in LED wafer 5 by base 129 is transmitted to the second plate 30b and distributes from the surface of the second plate 30b.Because heat is also distributed from the second plate 30b, therefore promoted the heat transfer of base 129, and the temperature of LED wafer 5 is reduced.Therefore, luminescent device has longer useful life.In addition, owing to can flow into big electric current, therefore can increase luminous intensity.Because second plate also is used as the element that keeps fluorescent cover, therefore can reduce manufacturing cost.
Figure 55 and 56A, 56B have shown luminescent device according to still another embodiment of the invention.The installation substrate 10 of base 130 is made by resin or pottery, and is formed in the installation substrate 10 by a plurality of passage of heats 439 such as the such metal manufacturing with high thermoconductivity of copper, scolder or gold.The passage of heat 439 does not contact electric lead 12,15 or the insulation with it that is formed on the base 130.The plane, top of the passage of heat 439 is exposed on the plane, top of base 130.Recess 435 and groove 437 are formed on the top of base 130, and electric lead 12,15 is formed on its bottom surface.Metallic plate as the second plate 30b is set on the plane, top of the base 130 relative with the top of the circuit board that is used as the first plate 30a.
The second plate 30b has opening 420, and this opening has and the about identical size of the opening of LED wafer 5 recess 435 mounted thereto.The second plate 30b that substrate 10 is installed with solder bonds to being formed at the passage of heat 439 of installing in the substrate 10.The lid 426 of the made of the incident light wavelength of sending by transparent material or such as the such conversion LED wafer 5 of fluorescent material can be arranged in the opening 420 of the second plate 30b, and perhaps it can be as the element of laying fluorescent material.Because electric lead 12 and 15 is formed in the groove 437, so they do not contact the second plate 30b.Can be by on the plane, top of base 130, forming the hole, by gold-plated in the side in described hole and make the passage of heat 439 by filling scolder therein.
Because the passage of heat is oriented to than the more close LED wafer 5 of the side plane of base 130, therefore the heat that is produced by LED wafer 5 may pass through the passage of heat 439 but not the side conduction of base 130.Therefore, heat is transmitted to the second plate 30b to distribute from its surface from the installation substrate 10 of base by the passage of heat 439.
As mentioned above, according to described embodiment,, therefore promoted the heat transfer of base, and therefore reduced the temperature of LED wafer because heat also distributes from second plate that is used to conduct heat.Therefore, luminescent device has longer useful life.In addition, owing to can flow into bigger electric current, therefore can increase luminous intensity.Because second plate also is used as the element that keeps fluorescent cover, therefore can reduce manufacturing cost.
Figure 57 A and 57B have shown base 131, and Figure 58 A and 58B have shown the luminescent device that has base 131 according to still another embodiment of the invention.On the roughly whole baseplane of base 131, metallic plate 436a is set.Passage of heat 439a-439f is embedded in and installs in the substrate 10, and the top of its baseplane contacting metal plate 436a.The baseplane of metallic plate 436a joins the metallic plate that is used as the second plate 30b that conducts heat to scolder 425.Therefore, each among the passage of heat 439a-439f all closely is thermally connected to the second plate 30b.Bottom, passage of heat 439a-439f ground can be extended the baseplane of the second plate 30b.The top that is embedded in four angles passage of heat 439a-439f on every side that substrate 10 is installed is exposed at the end face of base 131, does not contact electric lead 12,15, but contacts the metallic plate 411 of the first plate 30a.The electric lead 12,15 that is formed on the recess 435 of base 131 extends to the end face that substrate 10 is installed and is connected to liner 432.
As shown in Figure 58 A and 58B, the circuit board that is used as the first plate 30a has metallic plate 411, insulating barrier 412 and patterned layer 413, and the pattern plane of patterned layer 413 is to the top of base 131.Patterned layer 413 usefulness scolders 415 are connected to liner 432, and this liner is connected to electric lead 12,15.The top of the passage of heat 439a-439d that exposes at the end face of base 131 is connected to the metallic plate 411 of the first plate 30a with scolder.Metallic plate 411 also is used as the anchor clamps that are used to lay fluorescent cover 426.
In this embodiment, the second plate 30b and the base 131 that is used to conduct heat is connected to each other in large area so that by main heat-transfer path heat conduction.When LED was used to luminescent device or display device, after insulation processing, the plate in the bottom surface of base was fixed to the main body of described equipment usually.In the structure of this embodiment, this is corresponding to the second plate 30b.Because it and LED wafer 5 insulate, and therefore do not need insulation processing, can reduce manufacturing cost in other words.In addition, can reduce the thermal resistance between the main body of the second plate 30b and described equipment, and can conduct heat effectively.
Figure 59 A, 59B and 59C have shown luminescent device according to still another embodiment of the invention.A plurality of layer of metal foil 431a (being used for conducting heat) with high thermoconductivity are set at the installation substrate 10a of base 132.Sheet metal is necessary flatly to be arranged, is convenient to the well balanced of heat conduction but they are arranged to have ideally.They are exposed to the outside of base 132.Metallic plate 436b has electric lead formed thereon in succession 431 and insulating barrier 430b, and they are disposed on the bottom surface of base 132.They extend to the side at its end face liner 432 to be set.Electric lead 431b is formed on the recess 435 of central authorities' formation on the plane, top of base 132, to connect sheet metal 431a and electric lead 431.
A part that is used as the metallic plate 411 of the first plate 30a that is used for heat exchange or circuit board is exposed, and expose portion joins the metallic plate 436b of base 132 to scolder 416.Liner 432 usefulness wire-bonded are connected to the pattern 413 among the first plate 30b.The technology that is used to be electrically connected is unrestricted.In the example shown in Figure 59 A-59C, the end of line 432a is engaged, and its other end is connected to pattern 413 with scolder 415.
Be connected to the sheet metal 431a of the p of LED wafer 5 and n electrode and independently of one another, and they do not connect between p and n side at the metal level 431b of the side of the recess 435 of base 132.As shown in Figure 59 C, can be by being configured as on the ceramic sheet with reservation shape the pattern that forms sheet metal 431a, by on the ceramic sheet on the metallic plate 436b, superposeing sheet metal and by it is cured, thereby form pattern 431b.
Therefore in this embodiment, the heat that produces in the LED wafer is transmitted to whole base by the pattern that is used to conduct heat, and the heat transfer from the surface of base is accelerated.Owing to there is not pattern to be present in first plate that be used to conduct heat relative with the bottom surface of base, so the contact area between them broadens, thereby is enhanced to the heat transfer of circuit board, and the heat transfer by this path in other words is increased.
In this embodiment, owing to be enhanced and also increase from the heat transfer on the surface of base to the heat transfer of first plate that is used to conduct heat, so the temperature of LED wafer can be lowered to give luminescent device longer useful life.Because bigger electric current can flow into by the LED wafer, therefore can increase luminous intensity.
Figure 60 A has shown luminescent device according to still another embodiment of the invention, and wherein base has the structure shown in Figure 59 A-59C.The plate 30b that is arranged on the end face of base also is used as the framework that is used to settle fluorescent material 426 and is used for light-operated lens 427.The passage of heat 439 forms by thin slice 431a, but does not expose at the top of base.The top of the passage of heat 439 has gold layer, and the framework 30b that is used for fixing lens engages with scolder.As another selection, as shown in Figure 60 B, top board 30b also can only be used to settle fluorescent cover 426, and lens 427 can separate with it.Reference number 440 is represented electronic unit.
Select as another, the passage of heat 439 can expose at the top of base.In this case, circuit board is set on the top board, and first plate that is connected to circuit board or is used to conduct heat as the passage of heat of electrode.
In the structure of this embodiment, become evenly by the heat transfer of the passage of heat, and also be accelerated in the heat transfer that makes progress upward of second plate that is used to conduct heat to base.Can obtain confers similar advantages by the metallic plate that on the top of base, is provided for conducting heat, but the passage of heat can be quickened more to conduct heat.According to this embodiment, can quicken more to conduct heat by the pattern and the passage of heat that use is used to conduct heat.In this embodiment, used base, but its type is not limited to this.
Although described the present invention in conjunction with its preferred embodiment with reference to the accompanying drawings comprehensively, should be noted that variations and modifications are conspicuous for a person skilled in the art.Such variation and modification are to be understood as and are included in the scope of the present invention that is limited by accessory claim, unless they break away from this scope.

Claims (27)

1. luminescent device, it comprises:
Base, it comprises the installation substrate of being made by electrical insulating material, is installed in suprabasil at least one LED wafer to be installed and to be formed in the described installation substrate to be electrically connected to the electric lead of described LED wafer; With
First plate that is used to conduct heat, it comprises metallic plate;
First plane of wherein relative with the metallic plate of described first plate installation substrate is bonded thermally to described first plate; And
Described installation substrate has recess, and described at least one LED wafer is installed on the bottom of described recess.
2. luminescent device according to claim 1, described first plate that wherein is used to conduct heat comprises described metallic plate, be formed at the insulating barrier on the metallic plate, with the electrical connection pattern layer that is formed on the described insulating barrier, first plane of the installation substrate of described base is bonded thermally to the part of the described metallic plate of described first plate, the described part of described metallic plate in a side relative with described base by removing described insulating barrier and described electrical connection pattern layer exposed portions, and the described electric lead of described base is electrically connected to the described electrical connection pattern layer of described first plate.
3. luminescent device according to claim 2, at least one of wherein said installation substrate and described first plate that is used for conducting heat has projection, and this projection has the plane to be thermally bonded in described installation substrate and described first plate another.
4. luminescent device according to claim 2, one of wherein said installation substrate and described first plate that is used for conducting heat has projection, and another has recess, thus described projection fits in the described recess with thermal bonding between them.
5. luminescent device according to claim 2 wherein makes described LED wafer be installed to described installation substrate with grafting material with facing down.
6. luminescent device according to claim 2, wherein said installation substrate comprises through hole, described through hole is higher than the layer that the material of described installation substrate makes by pyroconductivity and covers.
7. luminescent device according to claim 6, wherein said through hole is full of the material that pyroconductivity is higher than described installation substrate.
8. luminescent device according to claim 2, further comprise the hardware between described first plate that is located at described installation substrate and is used to conduct heat, the described expose portion thermal bonding of the installation substrate of described hardware and described base and the described metallic plate of described first plate.
9. luminescent device according to claim 8, wherein said hardware is a joint element, joins the described expose portion of the described metallic plate of described first plate to the installation substrate with described base.
10. luminescent device according to claim 1, wherein said installation substrate is by the ceramic material manufacturing.
11. luminescent device according to claim 1, wherein at least one groove is set on described first plane of described installation substrate.
12. luminescent device according to claim 11, in wherein said at least one groove each all comprises a bottom and two sides, and the width between described two sides increases along the direction from the opening of described bottom each to described at least one groove.
13. luminescent device according to claim 11 further is included in the layer that forms on described at least one groove, described layer is formed by the material that pyroconductivity is higher than described installation substrate.
14. luminescent device according to claim 11, wherein make described LED wafer be installed to described installation substrate, and described at least one groove shaped is formed between first plane of described grafting material and described installation substrate to be thermally bonded to the expose portion of described metallic plate with grafting material with facing down.
15. luminescent device according to claim 11, the quantity of wherein said at least one groove is equal to or greater than two, and the density of described groove increases towards the zone that just is under the described LED wafer.
16. luminescent device according to claim 11, the quantity of wherein said at least one groove is equal to or greater than two, and described groove has the different degree of depth, and the degree of depth of described groove increases towards the zone that just is under the described LED wafer.
17. luminescent device according to claim 14, the quantity of wherein said at least one groove is equal to or greater than two, and the density of described groove increases towards the zone that just is under the described grafting material.
18. luminescent device according to claim 14, the quantity of wherein said at least one groove is equal to or greater than two, and described groove has the different degree of depth, and the degree of depth of described groove increases towards the zone that just is under the described grafting material.
19. luminescent device according to claim 11, the quantity of wherein said at least one LED wafer is equal to or greater than two, the quantity of described at least one groove is equal to or greater than two, and the density of described groove increases towards the zone under the central LED wafer that just is in described at least one LED wafer.
20. luminescent device according to claim 11, the quantity of wherein said at least one LED wafer is equal to or greater than two, the quantity of described at least one groove is equal to or greater than two, described groove has the different degree of depth, and described groove in described at least one LED wafer central LED wafer and the degree of depth in the zone between the expose portion of described metallic plate greater than the degree of depth in other zone.
21. luminescent device according to claim 1 further comprises second plate that is used to conduct heat, this second plate is bonded thermally to second plane of the described mounting base that is different from its first plane.
22. luminescent device according to claim 21, described second plate that wherein is used to conduct heat comprises another metallic plate, insulating barrier formed thereon and is formed at electrical connection pattern layer on the described insulating barrier that described electrical connection pattern layer is electrically connected to the described electric lead of described base.
23. luminescent device according to claim 21, in wherein said first and second plates one comprise at least one fuel plate with described first and second plates in another thermal bonding.
24. luminescent device according to claim 21, further comprise the heat conducting element that is located between described first and second plates with described first and second plates in each thermal bonding.
25. luminescent device according to claim 21, one in first plane of wherein said mounting base and second plane has at the opening that is installed on suprabasil described at least one LED wafer of described installation.
26. according to claim 2 or 21 described luminescent devices, wherein said installation substrate comprises the heat-transfer matcrial that is embedded into wherein, described heat-transfer matcrial has the pyroconductivity higher than the main body of described installation substrate.
27. luminescent device according to claim 26, wherein said heat-transfer matcrial engages with in described first and second plates at least one.
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