CN100410722C - Manufacture of high fill ratio reflective spatial light modulator with hidden hinge - Google Patents

Manufacture of high fill ratio reflective spatial light modulator with hidden hinge Download PDF

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Publication number
CN100410722C
CN100410722C CNB2004800209469A CN200480020946A CN100410722C CN 100410722 C CN100410722 C CN 100410722C CN B2004800209469 A CNB2004800209469 A CN B2004800209469A CN 200480020946 A CN200480020946 A CN 200480020946A CN 100410722 C CN100410722 C CN 100410722C
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substrate
hinge
etching
layer
reflecting optics
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CN1853129A (en
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潘晓河
杨晓
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Suzhou Ming Hao Sensing Technology Co Ltd
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Miradia Inc
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Abstract

Fabrication of a micro mirror array having a hidden hinge that is useful, for example, in a reflective spatial light modulator. In one embodiment, the micro mirror array is fabricated from a substrate that is a first substrate of a single crystal material. Cavities are formed in a first side of the first substrate. Separately, electrodes and addressing and control circuitry are fabricated on a first side of a second substrate. The first side of the first substrate is bonded to the first side of the second substrate. The sides are aligned so the electrodes on the second substrate are in proper relation with the mirror plates that will be formed on the first substrate and that the electrodes will control. The first substrate is thinned to a predetermined, desired thickness, a hinge is etched, a sacrificial material is deposited, the upper surface of the first substrate is planarized, a reflective surface is deposited to cover the hinge, a mirror is released by etching and the sacrificial layer around the hinge is removed to release the hinge so the hinge can rotate about an axis in line with the hinge.

Description

Manufacturing with high fill ratio reflective spatial light modulator of hidden hinge
The cross reference of related application
The application requires to enjoy the U.S. Provisional Patent Application No.60/475 that is entitled as " Hidden Hinge High FillRatio Reflective Spatial Light Modulator " that submitted on June 2nd, 2003,404 right of priority, it openly is incorporated into this by reference.
Technical field
The present invention relates to spatial light modulator (SLM), more specifically, the present invention relates to have hidden hinge so that the maximization of pixel filling rate, scattering and diffraction minimize and obtain the micro-mirror structure of high-contrast and high image quality.
Background technology
Spatial light modulator (SLM) has extensive application in optical information processing, the projection display, video and graphic monitor, TV and electrophotographic.Reflective SLM is such device, and it is modulated with reflection and electricity or light the incident light in the space pattern and imports corresponding image.Can modulate incident light at aspects such as phase place, intensity, polarization state or yawing moments.Reflective SLM generally includes the zone or the two-dimensional array of the addressable picture elements (pixel) that can reflect incident light.The key parameter (particularly in display application) of SLM is optics useful area shared part (also refer to the long-pending ratio that accounts for the SLM total surface area of reflective surface will of SLM, be also referred to as " filling rate ") in elemental area.The high fill-ratio expectation obtains.
The SLM of prior art has various shortcomings.These shortcomings include but not limited to: (1) is lower than the optics useful area of optimal value, and it has reduced optical efficiency; (2) coarse reflecting surface, it has reduced the reflectivity of catoptron; (3) diffraction and scattering, it has reduced the contrast of display; (4) used the problematic material of long-term dependability; And (5) complicated manufacturing process, the yield rate that it has increased spending and has reduced device.
The device of many prior aries comprises the reflexive zone of right and wrong basically in its surface.The reflection efficiency that this has caused low filling rate and has caused being lower than optimal value.For example United States Patent (USP) 4,229, and 732 disclosed MOSFET devices also will form this MOSFET device on device surface except catoptron.These MOSFET devices have occupied surface area, have reduced the shared part of optics effective device area and have reduced reflection efficiency.MOSFET device on the device surface also makes incident light generation diffraction, has reduced the contrast of display.In addition, shine the high light of MOSFET device of exposure owing to making the MOSFET device charged and make the overheated normal running of disturbing device of circuit.
Some SLM design has rough surface, makes the incident light scattering and has reduced reflection efficiency.For example, in some SLM design, reflecting surface is the aluminium film that is deposited on the lpcvd silicon nitride layer.When its during with thin film deposition, be difficult to control the smooth finish of these mirror surface.Therefore, final products have coarse surface, have reduced reflection efficiency.
In some SLM design, particularly some top hangs in the design of catoptron, and another problem that reduces reflection efficiency is that the hinge surface areas that exposes is bigger.The hinge surface areas of these exposures causes the scattering and the diffraction that are caused by hinge arrangement, and this is except to also having negative effect to contrast other parameters.
Many traditional SLM (for example United States Patent (USP) 4,566,935 in disclosed SLM) have the hinge that aluminium alloy is made.Aluminium and other metals are subject to tired and the plastic yield influence, and fatigue and plastic yield may cause long-term reliability problems.In addition, aluminium is subject to the influence of structure cell " memory ", and promptly all the other positions begin towards its most normal inclined position that occupies.In addition, disclosed catoptron will disengage by the expendable material of removing the mirror surface below in 4,566,935 patents.This technology causes accurate micro-mirror structure fracture in the process of disengaging of being everlasting.It also need reserve big gap to remove the expendable material below the catoptron with etching agent between the catoptron, this has reduced the shared part of optics useful area of device.
Other traditional SLM need a plurality of layers, comprise the independent layer that is used for catoptron, hinge, electrode and/or control circuit.Making such multilayer SLM need use multilayer film to pile up and the technology and the technology of etching.Use these technology and technology to cost an arm and a leg and reduced yield rate.For example, use these technology often to comprise the expendable material of the lower face of large tracts of land deposition and removal reflecting optics.Carry out the multilayer film deposition and pile up usually causing more coarse mirror surface in the lower face of reflecting optics, thereby reduced the reflection efficiency of catoptron.In addition, catoptron and hinge are in different layers or the substrate and can when mirror deflection, cause translation.Because translation must be opened the mirror separation in the array to avoid the mechanical interference between the near reflection mirror.Because the catoptron in the array can not lean on too closely with other catoptrons in the array, so SLM can suffer the optics useful area to be lower than the loss of optimal value or filling rate reduction.
Desired SLM has the reflection efficiency of raising, the long-term reliability of SLM device and the manufacturing process of simplification.
Summary of the invention
The present invention relates to spatial light modulator (SLM).In one embodiment, SLM has the micro reflector array of reflective alternative deflection, and this micro reflector array is made by first substrate being attached to second substrate with independent addressable electrode.Second substrate also can have addressing and the control circuit that is used for micro reflector array.Perhaps, part addressing and control circuit are positioned on the independent substrate and are connected to circuit and electrode on second substrate.
Micro reflector array comprises having the reflecting optics of highly reflective surface with the controlled deflection of reflection incident light.Reflecting optics is connected to hinge with connector.Hinge then is connected to frame with spacer support by spacer support walls.Hinge covers basically under reflecting surface.By hinge is hidden in below the reflecting surface basically, has eliminated by illumination being mapped to the hinge arrangement of exposure and leaving and the scattering and the diffraction corons that cause, thereby made the contrast maximization of device from its reflection.
Reflecting optics, connector, hinge, frame with spacer support and spacer support walls are by the first substrate manufacturing.First substrate is the wafer of homogenous material, is monocrystalline silicon in one embodiment.Spacer support walls is at reflecting optics and relevant with this reflecting optics and control between the electrode of this reflecting optics deflection and be provided with at interval.Electrode is positioned on second substrate, and second substrate is attached to micro reflector array.
Because hinge and reflecting optics are in (promptly with in one deck) in the same substrate, so when catoptron centers on the rotation of the hinge longitudinal axis, do not have translation or displacement.Owing to there is not translation, the gap between catoptron and the supporting walls only is subjected to the restriction of manufacturing technology and technology.The spacing of reflecting optics is very near and hinge is positioned substantially at contrast, scattering of light and the diffraction that the hiding means of reflecting surface below make micro reflector array can obtain high fill-ratio, raising minimizes, and has eliminated basically and passed the light that micro reflector array shines the circuit on second substrate.
In addition, because reflecting optics and hinge are made by single crystal silicon material in a preferred embodiment,, and be not subjected to memory effect basically, influence along the fracture or the fatigue of crystal boundary so hinge is firmer, more reliable.Monocrystalline substrate and other materials particularly deposit film are compared, and small defective and crack are obviously littler.As a result, the possibility along intercrystalline cracking (or propagating small fracture) is littler in device.And, use single substrate also multilayer film to be piled up in the present invention and the use of etching technics and technology reduces to minimum.In the present invention, the deposition and the removal of expendable material are limited in regional area, promptly around the hinge.In addition, needn't below catoptron, remove expendable material in the present invention.Therefore, it is much easier to remove expendable material, and the upper surface of reflecting optics keeps bright and clean making reflecting surface can be increased to the clean surface of ultraphotic.
SLM is by seldom step manufacturing, and this makes manufacturing cost and complexity keep very low.In first of first substrate, form cavity.On first of second substrate, make electrode and addressing and control circuit concurrently.First face of first substrate is attached to first of second substrate.To respectively be in suitable relation in the face of the accurate reflecting optics that electrode on second substrate and this electrode will be controlled.First substrate is thinned to predetermined expectation thickness, and the etching hinge is deposited on hinge zone on every side with expendable material, and with surface planarization, deposition of reflective surface coverage hinge disengages reflecting optics by etching, and removes the sacrifice layer around the hinge.
Net result is to be easy to make SLM, and this SLM can realize high optical efficiency and obtain performance reliable and that save cost ground generation high quality graphic.
Description of drawings
Fig. 1 is the synoptic diagram that illustrates according to the spatial light modulator general structure of an embodiment of the present invention.
Fig. 2 a is the stereographic map of single micro-reflector in an embodiment of the present invention.
Fig. 2 b is the stereographic map in the micro-reflector bight of Fig. 2 a.
Fig. 3 is a stereographic map of not being with the single micro-reflector of reflecting surface, shows the reflecting optics top and the side of micro reflector array in an embodiment of the present invention.
Fig. 4 a is the stereographic map that single micro-reflector bottom and side in an embodiment of the present invention are shown.
Fig. 4 b is the stereographic map in the micro-reflector bight of Fig. 4 a.
Fig. 5 is the stereographic map that the top and the side of micro reflector array in an embodiment of the present invention are shown.
Fig. 6 is the stereographic map that the bottom and the side of micro reflector array in an embodiment of the present invention are shown.
Fig. 7 a is that undeflected micro-reflector shown in Fig. 2 a is along departing from the sectional view that get in cornerwise cross section.
Fig. 7 b is the vertical view of the electrode of formed reflecting optics below and overlap joint contact in second substrate in an embodiment of the present invention.
Fig. 7 c is the sectional view that undeflected micro-reflector is got along the center diagonal cross section shown in Fig. 2 a.
Fig. 8 is the sectional view of the micro-reflector of deflection shown in Fig. 2 a.
Fig. 9 a is the process flow diagram that illustrates the preferred embodiment of spatial light modulator manufacture.
Fig. 9 b is the sectional view of detailed icon spatial light modulator manufacture more to Fig. 9 m.
Figure 10 illustrates the preferred embodiment that is used for forming at first substrate mask of cavity.
Figure 11 is the stereographic map of a kind of embodiment of the electrode that forms on second substrate.
Figure 12 a is the stereographic map of the micro-reflector of alternative embodiment of the present invention.
Figure 12 b is the stereographic map in the micro-reflector bight of Figure 12 a.
Figure 13 illustrates the micro-reflector bottom in Figure 12 a illustrated embodiment and the stereographic map of side.
Figure 14 is the stereographic map that micro reflector array top and side in the alternative embodiment of the present invention are shown.
Figure 15 is the stereographic map that the bottom and the side of micro reflector array in the alternative embodiment shown in Figure 14 are shown.
Figure 16 a is to illustrate the view of making the replaceable method of cavity in first substrate to Figure 16 e.
Embodiment
Reflective spatial light modulator (" SLM ") but 100 have the array 103 of deflection mirror 202.Can come independently catoptron 202 of optionally deflection by between catoptron 202 and corresponding electrode 126, applying voltage bias.The light of deflection control from the source reflection to the video display of each catoptron 202.Therefore, the deflection of control catoptron 202 can make the light that shines this catoptron 202 reflect on selected direction, thus and the pixel outward appearance in the may command video display.
Spatial light modulator overview:
Fig. 1 is the synoptic diagram that illustrates according to SLM 100 general structures of an embodiment of the present invention.Illustrated embodiment has three layers.But ground floor is the reflection mirror array 103 with a plurality of deflection micro-reflectors 202.In a kind of preferred embodiment, micro reflector array 103 is made by first substrate 105 among the SLM 100, and first substrate 105 is a homogenous material when manufacturing is finished, for example monocrystalline silicon.
The second layer is an electrod-array 104, and it has a plurality of electrodes 126 and is used to control micro-reflector 202.Each electrode 126 and a micro-reflector 202 are relevant and control the deflection of this micro-reflector 202.Addressing circuit makes can select single electrode 126 to be used to control the particular micro mirror 202 relevant with this electrode 126.
The 3rd layer is the layer of control circuit 106.This control circuit 106 has addressing circuit, and this can control control circuit 106 voltage is applied on the selected electrode 126.This makes control circuit 106 can control the deflection of catoptron 202 in the reflection mirror arrays 103 by electrode 126.Usually control circuit 106 also comprises demonstration control 108, line buffer memory (line memory buffer) 110, pulse width modulation array 112 and is used for vision signal 120 and the input of figure signal 122.Microcontroller 114, optical device control circuit 116 and flash memory 118 can be the outer members that is connected to control circuit 106, also can be included in the control circuit 106 in certain embodiments.In various embodiments, in the part of listing above of control circuit 106 some can not have, also can place on the independent substrate and be connected to control circuit 106, other add ons perhaps also can be arranged as the part of control circuit 106 or be connected to control circuit 106.
In one embodiment, the second layer 104 and the 3rd layer 106 all are to make on single second substrate 107 with semiconductor fabrication.In other words, the second layer 104 needn't with the 3rd layer 106 separate and be positioned at its top.Or rather, term " layer " is just in order to help to form the notion of spatial light modulator 100 different pieces.For example, in one embodiment, the second layer 104 of electrode 126 is to make at the 3rd layer of top of control circuit 106, and two layers are all made on single second substrate 107.In other words, in one embodiment, electrode 126 and demonstration control 108, line buffer memory 110 and pulse width modulation array 112 are all made on single substrate.Several function element of control circuit 106 are integrated in to have on the same substrate improve message transmission rate surpasses traditional spatial light modulator (wherein show that control 108, line buffer memory 110 and pulse width modulation array 112 all make) on independent substrate advantage.In addition, on single substrate 107, make the second layer of electrod-array 104 and the 3rd layer of control circuit 106 and also have simply, make cheap and the compact advantage of final product structure.
After making layer 103 and 107, it is combined together to form SLM 100.Cover by the ground floor of reflection mirror array 103 and to form 107 the second layer 104 and the 3rd layer 106 jointly.The zone of catoptron 202 belows has determined how many spaces ground floor 103 belows have can be used for electrode 126 and addressing and control circuit 106 in the reflection mirror array 103.Micro-reflector 202 belows in the reflection mirror array 103 have only limited space to be used to settle electrode 126 and form the electronic component that shows control 108, line buffer memory 110 and pulse width modulation array 112.The manufacturing technology that the present invention uses permission to make characteristic dimension very little for example can be made the technology of 0.18 micron feature and can make the technology of 0.13 micron or littler feature.The used manufacturing process of traditional spatial light modulator does not allow so little feature.Usually traditional spatial light modulator is by limit feature is made in about 1 micron or bigger manufacturing process.So the present invention allows to make much more circuit devcie (for example transistor) in the zone limited below the micro-reflector of reflection mirror array 103.This permission will for example show on the same substrate that is partially integrated in electrode 126 places of control 108, line buffer memory 110 and pulse width modulation array 112.Comprise with electrode 126 and be positioned at the performance that this control circuit 106 on the same substrate 107 has improved SLM 100.In other embodiments, can on different substrates, make and the various combinations of electrode electrically connected 126 and control circuit element.
In other embodiments, can on different substrates, make and the various combinations of electrode electrically connected 126 and control circuit element.
Catoptron:
Fig. 2 a is the stereographic map of a kind of embodiment of single micro-reflector 202, and Fig. 2 b is the more detailed stereographic map in the bight 236 of micro-reflector 202 shown in Fig. 2 a.In a kind of preferred embodiment, micro-reflector 202 comprises at least one reflecting optics 204, hinge 206, connector 216 and reflecting surface 203.In alternative embodiment, micro-reflector 202 also comprises frame with spacer support 210, is used for supporting reflex eyeglass 204, hinge 206, reflecting surface 203 and connector 216.Preferably, for example homogenous material wafer manufacturing of monocrystalline silicon of reflecting optics 204, hinge 206, connector 216 and frame with spacer support 210 usefulness.Like this, first substrate 105 shown in Figure 1 among this embodiment is silicon single crystal wafers.Making micro-reflector 202 with the homogenous material wafer simplifies the manufacturing of catoptron 202 greatly.In addition, can polish to produce bright and clean mirror surface monocrystalline silicon, its surfaceness is than the bright and clean order of magnitude of deposited film.The catoptron of being made by monocrystalline silicon 202 mechanically is a rigidity, can prevent undesirable bending of mirror surface or distortion, and the hinge of being made by monocrystalline silicon is firmer, more reliable, is not subjected to memory effect basically, along the fracture of crystal boundary or the influence of fatigue (in the hinge that these many other materials used in by micro reflector array are made all is common).In other embodiments, can replace monocrystalline silicon with other materials.A kind of possibility is that the silicon of another type (for example polysilicon or amorphous silicon) is used for micro-reflector 202, even also can use metal (for example aluminium alloy or tungalloy) to make catoptron 202 fully.In addition, use single substrate to avoid the use multilayer film to pile up and etching technics and technology in the present invention.
Shown in Fig. 2 a-b, 3,4a-b, 7a and 8 and as mentioned above, micro-reflector 202 has reflecting optics 204.This reflecting optics 204 is parts of micro-reflector 202, and this part is coupled to hinge 206 with connector 216 and by apply voltage bias and optionally deflection between catoptron 202 and respective electrode 126.Reflecting optics 204 comprises gable 204a and 204b among the embodiment shown in Figure 3.In the embodiment shown in Figure 12 a, 12b and 13, reflecting optics 204 is square substantially, takes advantage of 15 microns for about 15 microns, about 225 square microns of area, but also can be other shape and size.Reflecting optics 204 has upper surface 205 and lower surface 201.Upper surface 205 is preferably the high smooth finish surface of r.m.s. roughness less than 2 dusts, and preferably constitutes the major part of micro minor plate 204 surface areas.Depositing reflecting material 203 on the upper surface 205 of reflecting optics 204 and above the part hinge 206, for example aluminium or any other high reflecting material.This reflecting material 203 preferably has 300 dusts or littler thickness.The thickness of reflecting surface or material 203 guarantees that it has followed the surface of upper surface 205 flat, smooth of reflecting optics 204.The area of this reflecting surface 203 is greater than the area of the upper surface 205 of reflecting optics 204, and with by the light of the determined angle reflection of reflecting optics 204 deflections from light source.Notice that torsionspring hinge 206 is formed at upper surface 205 belows of reflecting optics 204 basically, and be deposited on the upper surface 205 basically and the reflecting surface 203 of part hinge 206 tops covers.Fig. 2 a has the reflecting surface that covers hinge 206 substantially 203 that is increased on the upper surface 205 with the illustrated reflecting optics 204 of the different Fig. 2 of being a between Fig. 3, and the illustrated reflecting optics 204 of Fig. 3 does not have reflecting surface 203, thereby does not cover hinge 206.Because hinge 206 and reflecting optics 204 are arranged in same substrate 105, and shown in Fig. 7 a and 7b, the height of center 796 of hinge 206 basically with the height of center 795 or 797 coplanes of reflecting optics 204, so do not have translation or displacement during around the longitudinal axis rotation of hinge 206 when catoptron 202.Owing to there is not translation, the gap between the spacer support walls of reflecting optics 204 and frame with spacer support 210 only need be subjected to the restriction of manufacturing technology and technology, usually less than 0.1 micron.The very near and hinge 206 of the spacing of reflecting optics 204 is hidden in contrast, scattering of light and the diffraction that can make micro reflector array 103 obtain high fill-ratios, raising under the reflecting surface 203 substantially and minimizes, and has eliminated basically and passed the light that micro reflector array 103 shines the circuit on second substrate 107.
Shown in Fig. 2 a-b, 3,4a-b, 7a, 8,12a, 12b and 13, reflecting optics 204 is connected to torsionspring hinge 206 by connector 216.Torsionspring hinge 206 is connected to frame with spacer support 210, and this frame with spacer support 210 remains on correct position with torsionspring hinge 206, connector 216 and reflecting optics 204.Hinge 206 comprises the first arm 206a and the second arm 206b.Shown in Fig. 3 and 13, each arm 206a and 206b have two ends, and end is connected to frame with spacer support 210 and another end is connected to connector 216.In alternative embodiment, also other spring, hinge and connectivity scenario can be used between reflecting optics 204, hinge 206 and the frame with spacer support 210.The most clearly diagram given, torsion hinge 206 as Fig. 3 and 4a preferably be orientated relative spacer support walls 210 to angular direction (for example becoming miter angle), and reflecting optics 204 is divided into two parts or both sides: the first side 204a and the second side 204b.Shown in Fig. 7 b, two electrodes 126 are relevant with catoptron 202, and electrode 126 is used for the first side 204a and another electrode 126 is used for the second side 204b.This makes either side 204a and 204b all can attracted to the swing downwards in the lump of the electrode 126a or the 126b of below, thereby the angular motion of wide region is provided.Torsionspring hinge 206 makes that the longitudinal axis that reflecting optics 204 can center on hinge 206 rotates with respect to frame with spacer support 210 when when applying voltage incite somebody to action that for example the power of electrostatic force is applied to reflecting optics 204 between catoptron 202 and respective electrode 126.This rotation produces angular deflection with reflected light on selected direction.Because hinge 206 and reflecting optics 204 are in same substrate 105, and illustrated in Fig. 7 a and 7b, the height of center 796 of hinge 206 and the height of center 795 or the 797 basic coplanes of reflecting optics 204 are so the motion that catoptron 202 centers on hinge 206 is pure rotation and do not have translation.In a kind of embodiment shown in Fig. 7 a and 8, the width 222 of torsionspring hinge 206 is less than the degree of depth 223 of hinge 206 (perpendicular to the upper surface 205 of reflecting optics 204).The width 222 of hinge 206 is preferably between about 0.12 micron to about 0.2 micron, and the degree of depth 223 is preferably between about 0.2 micron to about 0.3 micron.
As Fig. 2 a-b, 3,4a-b, 6 and 7a shown in, frame with spacer support 210 is positioned at the preset distance place of electrode 126 and addressing circuit top with reflecting optics 204, makes reflecting optics 204 can be deflected downwards to predetermined angle.Frame with spacer support 210 comprises spacer support walls, and these spacer support walls preferably form also preferably quadrature arrangement by same first substrate 105 shown in Fig. 2 a, 4a, 12a and 13.These walls also help to limit the height of frame with spacer support 210.The height of frame with spacer support 210 is to select according to the desired distance between reflecting optics 204 and the electrode 126 and the pattern design of electrode.Bigger height makes reflecting optics 204 can deflection more, and bigger maximum deflection angle is arranged.Bigger deflection angle provides higher contrast usually.In one embodiment, the deflection angle of reflecting optics 204 is 12 degree.In a preferred embodiment, if enough spacing and driving voltages are provided, reflecting optics 204 rotatable nearly 90 degree.Frame with spacer support 210 also provides support for hinge 206 and reflecting optics 204 and other reflecting optics 204 in the reflection mirror array 103 is separated.It is wide by 212 that frame with spacer support 210 has baffle wall, and the gap addition between this baffle wall wide 212 and reflecting optics 204 and the support frame 210 is substantially equal to the distance between the adjacent mirror sheet 204 of adjacent micro-reflector 202.In one embodiment, baffle wall wide 212 is 1 micron or littler.In a kind of preferred embodiment, baffle wall wide 212 is 0.5 micron or littler.This makes reflecting optics 204 be close together layout, has increased the filling rate of reflection mirror array 103.
In certain embodiments, micro-reflector 202 comprises element 405a and the 405b that stops reflecting optics 204 deflections when minute surface 204 has been deflected downwards to predetermined angular.These elements can comprise sports limiting device 405a or 405b and overlap joint contact 710a or 710b usually.Shown in Fig. 4 a, 6,7a, 7b, 8,13 and 15, when mirror surface 204 deflections, sports limiting device 405a on the reflecting optics 204 or 405b contact with overlap joint contact 710 (710a or 710b).When this happens, further deflection of reflecting optics 204. Sports limiting device 405a or 405b and overlap joint contact 710a or 710b have multiple possible structure.In the embodiment shown in Fig. 4 a, 6, the 7a, 8,13 and 15, the sports limiting device is cylindrical columns or mechanical stop 405a or the 405b that is attached to reflecting optics 204 lower surfaces 201, and overlap joint contact 710 is corresponding border circular areas on second substrate 107.In the embodiment shown in Fig. 7 a, 7b and 8, overlap joint contact 710a and 710b are electrically connected to frame with spacer support 210, and it is bonding respectively or be welded to overlap joint contact 710a or 710b with retardation motion stop 405a or 405b therefore to have the zero potential difference with respect to sports limiting device 405a or 405b.Thereby when reflecting optics 204 rotates to above predetermined angular (length and position by mechanical stop 405a or 405b are determined) with respect to frame with spacer support 210, mechanical motion stop 405a or 405b will contact with overlap joint contact 710a or 710b physics respectively, and stop any of reflecting optics 204 to be further rotated.
In a preferred embodiment, sports limiting device 405a or 405b are made by first substrate 105, and by making with reflecting optics 204, hinge 206, connector 216 and frame with spacer support 210 identical materials.Overlap joint contact 710a or 710b are also preferably by making with sports limiting device 405a or 405b, reflecting optics 204, hinge 206, connector 216 and frame with spacer support 210 identical materials.Therefore, be among the embodiment of monocrystalline silicon at material, sports limiting device 405a or 405b and overlap joint contact 710a or 710b are made by the hard material with longer functional lifetime, and this makes the reflection mirror array 103 can long term maintenance.In addition, because monocrystalline silicon is hard material, sports limiting device 405a or 405b and overlap joint contact 710a or 710b can with sports limiting device 405a or 405b respectively with overlap joint contact 710a or 710b contact position than the small size manufacturing, this has reduced bounding force greatly and has made the reflecting optics 204 can free deflection.In addition, this means that sports limiting device 405a or 405b and overlap joint contact 710a or 710b keep identical electromotive force, prevented when sports limiting device 405a or 405b are in different electromotive force with overlap joint contact 710a or 710b may by weld and the electric charge injection technology and cause bonding.The invention is not restricted to stop reflecting optics 204 deflections with said elements or technology.Can use any element known in the art and technology.
Fig. 4 a is the stereographic map that illustrates single micro-reflector 202 bottoms, comprises supporting walls 210, reflecting optics 204 (comprise both sides 204a and 204b and have upper surface 205 and lower surface 201), hinge 206, connector 216 and mechanical stop 405a and 405b.Fig. 4 b is the more detailed stereographic map in 202 bights 237 of micro-reflector shown in Fig. 4 a.
Fig. 5 illustrates to have nine micro-reflector 202-1 to the top of the micro reflector array 103 of 202-9 and the stereographic map of side.Although the micro reflector array shown in Fig. 5 103 has triplex row and three row, for nine micro-reflectors 202 altogether, reflection mirror array 103 also can be other sizes.Usually each micro-reflector 202 is corresponding to a pixel on the video display.Like this, the bigger array 103 with more micro-reflectors 202 provides the video display with more pixels.
As shown in Figure 5, the surface of micro reflector array 103 has big filling rate.In other words, the most surfaces of micro reflector array 103 is made of the reflecting surface 203 of micro-reflector 202.The surface of micro reflector array 103 has only few part right and wrong reflexive.As shown in Figure 5, the non-reflectivity on micro reflector array 103 surfaces partly is the zone between the reflecting surface 203 of micro-reflector 202.For example, the peak width between catoptron 202-1 and the 202-2 is determined by reflecting optics 204 and the gap width summation between the spacer support walls 210 of spacer support walls wide 212 and catoptron 202-1 and 202-2.Note, for example not having two independent adjacent partition walls 210 between the catoptron of catoptron 202-1 and 202-2 usually although Fig. 2 is a, the single catoptron 202 shown in 2b, 3,4a and the 4b has been described as having the frame with spacer support 210 of oneself.The baffle wall that a physics of support frame 210 is arranged between catoptron 202-1 and the 202-2 on the contrary, usually.Owing to there is not translation when reflecting optics 204 deflections, gap and baffle wall wide 212 can be made with the as far as possible little characteristic dimension that manufacturing technology can be supported.Like this, in one embodiment, the gap is 0.2 micron, and in another embodiment, the gap is 0.13 micron or littler.Because semiconductor fabrication allows littler feature, the size of baffle wall 210 and gap can reduce to allow higher filling rate.Embodiments of the invention allow high fill-ratio.In a preferred embodiment, filling rate is 96% even higher.
Fig. 6 illustrates micro reflector array 103 bottoms with nine micro-reflectors and the stereographic map of side.As shown in Figure 6, the supporting walls of the frame with spacer support 210 of micro-reflector 202 limits the cavity of reflecting optics 204 belows.These cavitys provide the space that deflects down for reflecting optics 204, have also reserved the 3rd layer that big zone is used to settle the second layer 104 that has electrode 126 and/or has control circuit 106 below reflecting optics 204.Fig. 6 also shows the bottom of lower surface 201 and frame with spacer support 210, torsionspring hinge 206, connector 216 and the sports limiting device 405a and the 405b of reflecting optics 204 (comprising both sides 204a and 204b).
As in Fig. 5 and 6 as seen, seldom the light perpendicular to reflecting optics 204 can pass any electrode 126 or the control circuit 106 that micro reflector array 103 arrives micro reflector arrays 103 belows.This is that (this reflecting surface 203 is positioned on the upper surface 205 of reflecting optics 204 and part hinge 206 tops) provides almost complete covering for the circuit of micro-reflector 103 belows because frame with spacer support 210 and reflecting surface 203.In addition, because frame with spacer support 210 separates the circuit of reflecting optics 204 with micro reflector array 103 belows,, the light that advances to reflecting optics 204 and pass reflecting optics 204 with the angle of on-right angle can not arrive the circuit of micro reflector array 103 belows so shining the wall of frame with spacer support 210 probably.Because the high light that does not almost incide on the reflection mirror array 103 can arrive circuit, SLM 100 has avoided the problem relevant with the strong illumination circuit.These problems comprise that the photon of incident light heater circuit and incident light makes circuit component charged, and the two all can cause fault.
Figure 12 a is the stereographic map of the micro-reflector 202 of the alternative embodiment according to the present invention, and Figure 12 b is the bight 238 more detailed stereographic maps of micro-reflector 202.Torsion hinge 206 among this embodiment is parallel to the spacer support walls of frame with spacer support 210.Selectively make reflecting optics 204 towards electrode deflection by between reflecting optics 204 and respective electrode 126, applying voltage bias.For identical supporting walls height, the embodiment shown in Figure 12 a provides littler total range of angular motion than the catoptron 202 that has diagonal angle hinge 206 shown in Fig. 2 a and the 2b.But, as the embodiment shown in Fig. 2 a and the 2b, among the embodiment shown in Figure 12 a and the 12b hinge 206 under the upper surface 205 of reflecting optics 204 and the surface that is reflected 203 cover, cause SLM 100 to have high fill-ratio, high optical efficiency, high-contrast, low optical diffraction and reflection, the reliable and performance of saving cost.Figure 12 b is more detailed stereographic map in micro-reflector 202 bights and supporting walls and the reflecting surface 203 that illustrates reflecting optics 204, hinge 206, frame with spacer support 210.Figure 13 illustrates the bottom of single micro-reflector 202, comprises hinge 206, connector 216 and sports limiting device 405a.In other embodiments, hinge 206 still being arranged as in the lump of both sides that can be basically parallel to reflecting optics 204 is divided into two parts 204a and 204b with reflecting optics 204.Figure 14 and 15 provides the stereographic map of the micro reflector array of being made up of the micro-reflector 202 described in a plurality of Figure 12 a, the 12b and 13.
The manufacturing of spatial light modulator:
Fig. 9 a is the process flow diagram that illustrates a kind of preferred embodiment of spatial light modulator 100 manufactures.Fig. 9 b illustrates the method for optimizing of making space photomodulator 100 in more detail to Fig. 9 m, and Figure 16 a illustrates interchangeable preferable production process with Fig. 9 e to Fig. 9 m to 16e.
With reference to figure 9a, generate (902) mask and carry out the initial part manufacturing of micro-reflector 202.The preferred embodiment of this mask 1000 is illustrated among Figure 10 and limits to fall to form the part of micro reflector array 103 underside cavity from the one side etching (904) of first substrate 105, and this cavity limits frame with spacer support 210 and supporting walls.As shown in figure 10, the zone 1004 of mask 1000 is photoresist material or other dielectric substances of monox or silicon nitride for example, and its first substrate 105 that will prevent the below is subjected to etching.Zone 1002 among Figure 10 is exposed regions of substrate 105, and it will be etched to form cavity.The zone 1004 that is not etched stays and forms the spacer support walls in the frame with spacer support 210.
In one embodiment, first substrate 105 is at SF 6, HBr and oxygen is respectively with etching in the reactive ion etching chamber of the flow rate of 100sccm, 50sccm and 10sccm.On-stream pressure arrives in the scope of 50mTorr 10, and substrate bias power is 60W, and power is 300W.In another embodiment, first substrate 105 is at Cl 2, HBr and oxygen is respectively with etching in the reactive ion etching chamber of the flow rate of 100sccm, 50sccm and 10sccm.In these embodiments, when the about 3-4 micron of cavity is dark, stop etching procedure.This degree of depth is measured with etching depth in-situ monitoring (for example in-situ optical interferometer techniques) or by etch rate is carried out timing.
In another embodiment, in wafer, form cavity by anisotropic rie technology.Wafer places reaction chamber.Respectively with the overall flow rate of 100sccm, 50sccm and 20sccm with SF 6, HBr and oxygen introduces reaction chamber.Under 50mTorr pressure, use the substrate bias power setting of 50W and the power of 150W to be provided with about 5 minutes.20sccm backside helium air-flow with 1mTorr pressure cools off wafer afterwards.In a kind of preferred embodiment, when the about 3-4 micron of cavity is dark, stop etching procedure.This degree of depth is measured with etching depth in-situ monitoring (for example in-situ optical interferometer techniques) or by etch rate is carried out timing.
Can generate the mask on first substrate 105 with the standard technique of for example photoetching.As previously mentioned, in a kind of preferred embodiment, micro-reflector 202 is formed by the homogenous material of for example monocrystalline silicon.Like this, in a kind of preferred embodiment, first substrate 105 is silicon single crystal wafers.Note usually cutting apart after a plurality of micro reflector arrays 103 that are used for a plurality of SLM 100 are treated making on the wafer.Be generally the structure that produces micro reflector array 103 and make greater than feature used in the cmos circuit, be easier to so be used to make the texture ratio that the known technology of cmos circuit forms micro reflector array 103.
Fig. 9 b is the sectional view that illustrates first substrate 105 before making.Originally substrate 105 comprises device layer 1615, the insulation oxide layer 1610 of predetermined thickness and handles substrate (handlingsubstrate) 1605.Device layer 1615 is positioned at first of substrate 105 and handle substrate 1605 and be positioned at second of substrate 105.In a preferred embodiment, device layer 1615 is made by single crystal silicon material, and thickness is between about 2.0 microns to 3.0 microns.Silicon-on-insulator (" SOI ") the technology manufacturing of the substrate 105 usefulness any standard known in the art shown in Fig. 9 b also can be bought from the silicon wafer suppliers such as SoitecInc., Shinetsu Inc. or Silicon Genesis Inc..
With reference to figure 9b, in the device layer 1615 on 105 second of first substrates, etch shallow cavity 198.The details of etching is described in above-mentioned paragraph, particularly Shang Mian 59-61 section.Etching depth is about the distance 197 (after second substrate 107 is attached to first substrate 105, will illustrate below) between sports limiting device 405a and 405b (to be formed) end and second substrate 107.The distance 197 of this degree of depth has been determined the sports limiting device 405a that makes the most at last in the subsequent etching step and the length of 405b.Shown in Fig. 9 c and 9d, two sports limiting device 405a and 405b be preferably with photoetching technique from device layer 1615 etchings of first substrate 105.Equally, the details of etching is described in 59-61 section above.
Figure 16 a-16e illustrates the replaceable method that is used to make first substrate 105 that has cavity.The sectional view of first substrate 105 before Figure 16 a shows and makes.The same with first substrate 105 among Fig. 9 b, originally first substrate 105 among Figure 16 a comprises device layer 1615, the insulation oxide layer 1610 of predetermined thickness and handles substrate 1605.Device layer 1615 is positioned at first of substrate 105 and goes up and handle substrate 1605 and be positioned on second of substrate 105.This first substrate 105 can be with the silicon-on-insulator process manufacturing of any standard known in the art, also can be from buying such as silicon wafer suppliers recited above.In a preferred embodiment, device layer 1615 is made by single crystal silicon material, and the top section 1615a of the device layer 1615 shown in Figure 16 e has predetermined thickness, is preferably between 0.2 micron to 0.4 micron.The thickness of this top section 1615a of device layer is the roughly thickness of the reflecting optics 204 made at last the most at last.
With reference to figure 16b, obtain (all can make or buy) have each layer described in the earlier paragraphs 1610 and 1615 and first substrate 105 of substrate 1605 after, the dielectric substance 1620 of for example monox is deposited on the device layer 1615 of first substrate 105.
Afterwards with standard photoetching known in the art and lithographic technique etching dielectric substance 1620 to produce opening 1625 and 1626 in the precalculated position, the supporting walls of frame with spacer support 210 will be positioned at this precalculated position.Shown in Figure 16 c, mask and opening 1625 and 1626 that are used for subsequent process steps have been produced through the dielectric substance 1620 of over etching.
In the illustrated preferred embodiment of Figure 16 c, use epitaxial growth technology with the single crystal silicon material in the device layer 1615 as epitaxially grown " crystal seed ", and grow single crystal silicon material 1627 and 1628 at the opening 1625 and 1626 places of dielectric substance 1620.Usually the material of growth is and device layer 1615 (or crystal seed) identical materials in opening 1627 and 1628, and has the crystal structure identical with device layer 1615.In the embodiment shown in Figure 16 c, the single crystal silicon material 1627 and 1628 of being grown becomes the supporting walls of the frame with spacer support 210 that is used for micro reflector array 103 the most at last.
At last, remove dielectric substance 1620 and obtain structure shown in Figure 16 e.Structure in Figure 16 e does not have sports limiting device 405a and the 405b, and first substrate 105 that obtains is identical with 105 structures of first substrate shown in Fig. 9 d.But, according to the above discussion, those of ordinary skills are understood that how to add sports limiting device 405a and 405b to shown in Figure 16 e structure.For example, can etching and epitaxial growth go out this sports limiting device 405a and 405b, just as the supporting walls of frame with spacer support 210.Therefore, Figure 16 a provides the replaceable method of making cavity in first substrate 105 to 16e, and this method all can accurately be controlled on the whole thickness of the top section 1615a of the device layer 1615 of first substrate 105.Finish Fig. 9 e will make hidden hinge to the step shown in the 9m high fill ratio reflective spatial light modulator 100.
Get back to Fig. 9 a, be independent of the manufacturing of first substrate, 105 cavities and on first 703 of second substrate 107, shown in Fig. 9 a and 9e, form in (906) electrode 126, addressing and the control circuit 106 partly or entirely.Second substrate 107 can be the transparent material of for example quartz or other material.If second substrate is quartzy, then to compare with crystalline silicon, transistor can be made by polysilicon.Preferably form (906) circuit with the standard CMOS manufacturing technology.For example, in one embodiment, the control circuit 106 that forms or make (906) on second substrate 107 comprises memory cell array, row address circuitry and column data loaded circuit.There is multiple distinct methods manufacturing to carry out the electronic circuit of addressing function.Known DRAM, SRAM and latch devices can be carried out addressing function.Because the area of reflecting optics 204 is with respect to semiconductor dimension big (for example reflecting optics 204 can have the area of 225 square microns), so can make the circuit of complexity below micro-reflector 202.Possible circuit include but not limited to be used to store the sequential pixel information memory buffer unit, be used for compensatory reflex eyeglass 204 to the circuit of the possible heterogeneity of electrode 126 spacings (owing to electrode 126 is driven) and the circuit of carrying out the width modulation conversion at different voltage levels.
This control circuit 106 is covered by the passivation layer of for example monox or silicon nitride.Follow the plated metal layer.In one embodiment, this metal layer is carried out patterning and etching to limit electrode 126 and biasing/reset bus.Arrange electrode 126 in manufacture process, making has one or more electrodes 126 corresponding to each micro-reflector 202.The same with first substrate 105, after treating, many groups circuit that (906) be used for a plurality of SLM 100 cuts apart forming on second substrate 107 usually.
Afterwards shown in Fig. 9 a and 9e, with first substrate 105 shown in Fig. 9 d or Figure 16 e in conjunction with (910) to second substrate 107.Shown in Fig. 9 e, first substrate 105 has top layer 905 on the one side opposite with second substrate 107.The one side that first substrate 105 is had cavity and sports limiting device 405a and 405b has the one side of electrode 126 in conjunction with (910) to second substrate.Substrate 105 and 107 is aimed at the electrode that makes on second substrate 107 be in the appropriate location with micro-reflector 202 deflections in the control micro reflector array 103.In one embodiment,, and two substrates 105 and 107 combinations (910) are in the same place by the pattern on first substrate 105 aimed at the pattern on second substrate 107 and with two substrates 105 and 107 optical alignments with the bifocal microscope by the low temperature bond method of for example anode combination or eutectic bond.In a preferred embodiment, can occur under any temperature that is lower than 400 degrees centigrade, comprise under the room temperature in conjunction with (910).For example can be with thermoplastics or dielectric spin glass (dielectric spin glass) bond material with by heat-mechanical system bonded substrate 105 and 107.Guarantee to have between first substrate 105 and second substrate 107 favorable mechanical to adhere in conjunction with (910), and can at room temperature take place.Fig. 9 e illustrates first substrate 105 that combines and the sectional view of second substrate 107.There is multiple alternative embodiment to can be used for making (906) second substrates.
First substrate 105 is combined with second substrate 107 (910) together after, shown in Fig. 9 f and 9a, the top layer 905 of first substrate 105 cut thin (912) to predetermined expectation thickness.At first remove the manipulation substrate 1605 shown in Fig. 9 f or Figure 16 e, this is usually by grinding and/or etching is carried out, and anyly is used to carry out the technology that oxide peels off and peels off oxide skin(coating) 1610 with known in the art then.Oxide skin(coating) 1610 stops to indicate and placing first substrates 105 that are thinned to expectation thickness in first substrate 105 with generation as what cut thin step 912.Cut thin technology and can comprise grinding and/or etching, preferably include the silicon back etch process, for example wet etching or plasma etching.The upper surface 205 of first substrate 105 that the result obtains finally will form as Fig. 3,7a, 8 and 9m shown in reflecting optics upper surface 205.In a preferred embodiment, the final thickness of the substrate of winning 105 is several microns.
Then, with two step etching procedure etching (913) hinges 206.At first, shown in Fig. 9 g, the upper surface 205 of etching first substrate 105 is to form depression 910.This guarantees to be formed on below the upper surface 205 (will become the upper surface 205 of reflecting optics 204 when manufacturing process finishes) that hinge 206 in the depression 910 is located substantially on first substrate 105.Secondly, shown in Fig. 9 h and 9a, etching first substrate 105 is to disengage hinge 206 substantially from the reflecting optics part 915 of first substrate 105 once more.As shown in Fig. 3,4a, 4b, 12a, 12b and 13 illustrated embodiments, the end of hinge 206 still is connected with the spacer support walls of frame with spacer support 210.The reflecting optics part 915 of first substrate 105 will form the reflecting optics 204 of micro-reflector 202.
In one embodiment, at Cl 2, O 2And N 2Gas etches hinge 206 in the decoupled plasma source chamber (decoupled plasma source chamber) with the flow rate of 100sccm, 20sccm and 50sccm respectively.On-stream pressure arrives in the 10mTorr scope 4, and substrate bias power is 40W, and power is 1500W.The degree of depth is measured with etching depth in-situ monitoring (for example in-situ optical interferometer techniques) or by etch rate is carried out timing.
Afterwards shown in Fig. 9 i and 9a, the expendable material 920 of for example photoresist is deposited (914) to first substrate 105, fill on the hinge 206 and gap on every side, comprise between the reflecting optics part 915 of the hinge 206 and first substrate 105 and the gap on the upper surface 205 of first substrate 105.Photoresist can be spun on the substrate simply.
Shown in Fig. 9 j and 9a, will have first substrate, 105 complanations (915) of expendable material 920 with etchback step, chemical mechanical processing (" CMP ") technology or any other technology known in the art afterwards.This technology guarantees that 920 of expendable materials stay on the hinge and on every side, and does not stay on the upper surface 205 of first substrate 105.Attention is in planarization steps, because expendable material 920 is to remove from the upper surface 205 of first substrate 105, so remove than being easier to.
Shown in Fig. 9 k and 9a reflecting surface 203 deposition (916) (being comprised that the upper surface 205 of reflecting optics 204 and hinge 206 are by the part of top, expendable material 920 cover parts) to the surface of complanation goes up with generation reflecting surface 203.As mentioned above, the area of reflecting surface 203 is greater than the area of reflecting optics 204 upper surfaces 205.Reflecting surface is preferably aluminium or any other reflecting material known in the art, and preferably has 300 dusts or littler thickness.Reflecting surface 203 covers the upper surface 205 of first substrate 105 and the zone of part hinge 206 tops.Fig. 9 k is the sectional view that the reflecting surface 203 of deposition is shown.Reflecting surface 203 is thinner, guarantees that it has followed the characteristic of upper surface 205 flat, smooth of reflecting optics 204.
Shown in Figure 91 and 9a, etching (917) reflecting surface 203 and reflecting optics part 915 are to disengage reflecting optics 204 from the reflecting optics part 915 of first substrate 105.To the etching of reflecting surface 203 and reflecting optics part 915 preferably same indoor carrying out.
At reflecting surface 203 is in the preferred embodiment of aluminum, and the etching of reflecting surface 203 (917) occurs in Cl 2, BCl 3And N 2Gas is respectively in the decoupled plasma source chamber with the flow rate of 40sccm, 40sccm and 10sccm.On-stream pressure is 10mTorr, and substrate bias power is 75W, and power is 800W.Etching depth monitors (for example in-situ optical interferometer techniques) with in-situ etch depth or measures by etch rate is carried out timing.After etching (917) aluminium reflecting surface 203, the lower-layer reflecting mirror sheet part of being made by silicon 915 is at HBr, Cl in a preferred embodiment 2, and O 2Gas is respectively with etching (917) in the decoupled plasma source chamber of the flow rate of 90sccm, 55sccm and 5sccm.On-stream pressure is 5mTorr, and substrate bias power is 75W, and power is 500W.Etching depth monitors (for example in-situ optical interferometer techniques) with in-situ etch depth or measures by etch rate is carried out timing.
After etching (917) reflecting surface 203 and reflecting optics part 915, reflecting optics 204 is disengaged; But hinge 206 is still fixed in position by expendable material 920.As a result, reflecting optics 204 and micro-reflector can't rotate around hinge 206 as a whole, thereby have guaranteed that device is not destroyed in subsequent processing steps.
The final step of making micro-reflector 202 is to remove on (918) hinge 206 and remaining expendable material 920 on every side.Note because expendable material 920 is below reflecting optics 204 or catoptron 202, so remove on the hinge 206 and remaining on every side expendable material 920 than being easier to.For example the dry process of plasma etching is preferred, because wet processing is attended by the problem of adhesion.In one embodiment, expendable material 920 is at O 2The photoresist material that etches away in the plasma chamber.After removing (918) expendable material 920, hinge 206 is disengaged, and reflecting optics 204 is freely around hinge 206 rotations.According to above-mentioned manufacturing step, the result is that hinge 206 is formed at upper surface 205 belows of reflecting optics 204 basically and is covered by reflecting surface 203, and this reflecting surface 203 is deposited on the upper surface 205 of reflecting optics 204 and part hinge 206 tops.
In certain embodiments, micro reflector array 103 is by a sheet glass or the protection of other transparent materials.In one embodiment, during the manufacturing of micro reflector array 103, the periphery that centers on each micro reflector array 103 of making on first substrate 105 keeps flange.As described in Fig. 9 a,, a sheet glass or other transparent materials are arrived this flange in conjunction with (919) in order to protect the micro-reflector 202 in the micro reflector array 103.This transparent material protection micro-reflector 202 is avoided physical hazard.In a kind of alternative embodiment, use up and make the flange array in the photosensitive resin layer that is engraved on the glass plate.With the coboundary of epoxy coating, the reflective SLM 100 that finishes is aimed at and be attached to glass plate afterwards to flange.
As mentioned above, can make a plurality of SLM 100 by two substrates 105 and 107.A plurality of micro reflector arrays 103 can be in first substrate 105, made, and many group circuit can be in second substrate 107, made or form.Making a plurality of SLM 100 has increased the efficient of spatial light modulator 100 manufacturing process.But,, then must be divided into independent SLM100 if once make a plurality of SLM 100.There is several different methods separately and make it carry out the preparation of coming into operation with each spatial light modulator 100.In first method, with each spatial light modulator 100 simply with the substrate 105 and 107 of combination on the remainder tube core of SLM 100 separate (920).With the standard packaging technology each spatial light modulator that separates 100 is encapsulated (922) afterwards.
In the second approach, before being separated, each SLM carries out the wafer level chip-scale encapsulation, to be sealed into each SLM 100 in the independent cavity and to form electrical lead.But this has further protected the reflectivity deflecting element and has reduced packaging cost.In a kind of embodiment of the method shown in Fig. 9 a, the back of second substrate 107 uses solder ball in conjunction with (924).Come out with the metal connector that will form during the circuit manufacturing on second substrate 107 in the back of etching (926) second substrates 107 afterwards.Then between metal connector and solder ball deposition (928) lead so that the two be electrically connected.At last, a plurality of SLM are carried out tube core and separate (930).
Figure 11 is the stereographic map of a kind of embodiment of the electrode 126 of formation on second substrate 107.In this embodiment, each micro-reflector 202 all has corresponding electrode 126.Electrode 126 in this illustrated embodiment is made the remaining circuit that is higher than on second substrate 107.In a preferred embodiment, the remaining circuit on the electrode 126 and second substrate 107 is positioned on the same level.In another embodiment, electrode 126 extends to the circuit top.In an embodiment of the present invention, electrode 126 is the independent aluminium pads that are assemblied in the micro-reflector below.The shape of electrode depends on the embodiment of micro-reflector 202.For example, in the embodiment shown in Fig. 2 a, 2b and 3, preferably have two electrodes 126 to be positioned at catoptron 202 belows, each electrode 126 has triangular shaped shown in Fig. 7 b.In the embodiment shown in Figure 12 a, 12b and 13, preferably there is single square-shaped electrode 126 to be positioned at catoptron 202 belows.These electrodes 126 are made on the surface of second substrate 107.The surface area of electrode 126 is bigger in this embodiment, makes that reflecting optics 204 is drawn to the required addressing voltage of the complete deflection that makes reflecting optics 204 produce predetermined angulars on the mechanical stop downwards is lower.
Operation:
In operation, independent reflective micro mirrors 202 is by deflection optionally and be used for inciding catoptron 202 and carrying out spatial modulation by the light of its reflection.
Fig. 7 a and 8 illustrates along the sectional view of the micro-reflector shown in the dotted line 251 202 among Fig. 2 a.Notice that this sectional view departs from the center diagonal of micro-reflector 202, thereby illustrate the profile of hinge 206.Fig. 7 c illustrates along the different cross section figure of the micro-reflector shown in the dotted line 250 202 among Fig. 2 a.Note this sectional view along center diagonal, perpendicular to hinge 206.Fig. 7 c illustrates the connector 216 that relates to reflecting optics 204a and 204b.Fig. 7 a, 7c and 8 illustrate the micro-reflector 202 of electrode 126 tops.In operation, voltage is applied on the electrode 126 of catoptron 202 1 sides, with the deflection of reflecting optics 204 appropriate sections (204a one side among Fig. 8) of control electrode 126 tops.As shown in Figure 8, when voltage was applied to electrode 126, half 204a of reflecting optics attracted to electrode 126, and second half 204b of reflecting optics is because the structure of reflecting optics 204 and rigidity and remove from the electrode 126 and second substrate 107.This makes reflecting optics 204 around 206 rotations of torsionspring hinge.When electrode 126 removes voltage, hinge 206 makes the not offset position shown in reflecting optics 204 rebound Fig. 7 a.Perhaps, in the embodiment that has the diagonal angle hinge 206 shown in Fig. 2 a, 2b and 3, voltage can be applied on the electrode 126 of reflecting optics 204 opposite sides and make catoptron 202 upper deflecting in the opposite direction.Like this, the light that shines catoptron 202 is reflected on certain direction, this direction can be controlled by electrode 126 is applied voltage.
The following operation of a kind of embodiment.Originally not deflection of catoptron 202 shown in Fig. 7 a and 7c.Under this not offset state, arrive the incident beam of SLM 100 by flat mirror 202 reflections from light source and oblique incidence.The folded light beam of outgoing can be received by for example light collector (optical dump).Can not reflex on the video display from the light of undeflected catoptron 202 reflections.
When between half reflecting optics 204a and the electrode under it 126, applying voltage bias, catoptron 202 deflection owing to electrostatic attraction.In one embodiment, when reflecting optics 204a deflects down as shown in Figure 8, V C1Be preferably 12 volts, V bBe-10 volts, and V C2It is 0 volt.(or on the contrary) similarly, when reflecting optics 204b deflects down, V C1Be preferably 0 volt, V bBe-10 volts of V C2It is 12 volts.Because the design of hinge 206, a side 204a of reflecting optics or 204b (side that promptly has electrode 126 tops of voltage bias) deflect down (towards second substrate 107), and the opposite side 204b of reflecting optics or 204a remove from second substrate 107.Attention is in a kind of preferred embodiment, and all basically bendings all occur in hinge 206 rather than the reflecting optics 204.This can be narrower and 206 on hinge is connected to support column at two ends realizes by making hinge width 222 in one embodiment.As mentioned above, the deflection of reflecting optics 204 is limited by sports limiting device 405a or 405b.Reflecting optics 204 complete deflections can enter the folded light beam deflection of outgoing the image optics device and deflect into video display.
When reflecting optics 204 deflections surpass " fastening " or " traction " voltage when (being about 12 volts or littler in one embodiment), no longer balance electrostatic force or torque of the answer mechanical force of hinge 206 or torque, be in half 204a of the reflecting optics 204 under the electrostatic forcing or the electrode 126 " fastening " of 204b under it to realize complete deflection, this complete deflection only is subjected to the restriction of applied sports limiting device 405a or 405b.Be parallel among the embodiment of the supporting walls of frame with spacer support 210 at hinge 206 shown in Fig. 9 a, 9b and 10, for reflecting optics 204 is discharged from its complete inflection point, must shutoff voltage.In the embodiment that 206 diagonal angles of hinge shown in Fig. 2 a, 2b and 3 are arranged, for reflecting optics 204 is discharged from its complete inflection point, must another electrode switching on and catoptron 202 be attracted to opposite side in shutoff voltage.
Micro-reflector 202 is dynamo-electric bistable devices.At given release voltage and when fastening concrete voltage between the voltage, reflecting optics 204 has two possible deflection angles, and this depends on the deflection history of catoptron 202.Therefore, the deflection of catoptron 202 is just as latch.The existence of these bistable states and latch characteristic is to be inversely proportional to owing to the required mechanical force of catoptron 202 deflections and the distance between the roughly linear electrostatic force that opposes of deflection angle and reflecting optics 204 and the electrode 126.
Because the total voltage that the electrostatic force between reflecting optics 204 and the electrode 126 depends between reflecting optics 204 and the electrode 126 is poor, has reduced to be applied to electrode 126 to obtain the required positive voltage of given amount of deflection so be applied to the negative voltage of reflecting optics 204.Like this, apply voltage to reflection mirror array 103 and can reduce electrode 126 required voltage sizes.This may be useful, for example owing to wish the maximum voltage must be applied to electrode 126 in some applications and maintain below the 12V, because the switching capability of 5V is more common and more save cost in semi-conductor industry.
Owing to fixed the maximum deflection of catoptron 202, if SLM 100 is surpassing the voltage place operation that fastens voltage, it can be operated with digital form.Operation was exactly digital originally, because be parallel among the embodiment of the supporting walls of frame with spacer support 210 at hinge 206 shown in Fig. 2 a, 2b and 3, reflecting optics 204 or by applying voltage to related electrode 126 and deflecting down fully perhaps is allowed to upwards takeoff there not being voltage to be applied under the situation of related electrode 126.In the embodiment that 206 diagonal angles of hinge shown in Figure 12 a, 12b and 13 are arranged, reflecting optics 204 or apply voltage and deflect down fully by the related electrode 126 to reflecting optics 204 1 sides perhaps is deflected downwards to the opposite side of reflecting optics 204 when to another electrode 126 energisings on reflecting optics 204 opposite sides.Reflecting optics 204 is deflected down fully up to the voltage that physical component stoped that is prevented from reflecting optics 204 deflections be called " fastening " or " traction " voltage.Like this, deflect down fully, should apply to respective electrode 126 and be equal to or greater than the voltage that fastens voltage in order to make reflecting optics 204.In video, display application, when reflecting optics 204 deflected down fully, the incident light on the reflecting optics 204 was reflected to the corresponding pixel on the video display screen, and this pixel brightens.When reflecting optics 204 was allowed to upwards takeoff, light reflexed to and makes on its direction of not shining video display screen this pixel deepening.
In so digital operating period, associated mirror plate 204 fully after the deflection, just needn't keep fastening fully voltage on electrode 126.In " address phase ", be set to the required level of deflecting reflection eyeglass 204 with the used voltage of the corresponding selected electrode of the reflecting optics 204 of deflection fully 126.After the deflection, reflecting optics 204 is maintained the required voltage of inflection point less than the required voltage of actual deflection owing to the voltage on the electrode 126 at this reflecting optics 204.This is because the reflecting optics 204 of deflection and the gap between the addressing electrode 126 are littler when being in the process of being deflected than reflecting optics 204.Therefore, " maintenance stage " after address phase, the voltage that is applied to selected electrode 126 can begin that required level reduces and the deflection state that do not influence reflecting optics 204 basically by it.An advantage with lower maintenance stage voltage is that near 204 on not deflecting reflection eyeglass is influenced by littler electrostatic attraction, so it remains on the position of approaching zero deflection more.This has improved the reflecting optics 204 of deflection and the optical contrast between the undeflected reflecting optics 204.
By suitable selection physical dimension (in one embodiment, by frame with spacer support 210 spacings between determined reflecting optics 204 of the demand of mirror structure and deflection angle and the electrode 126 is 1 to 5 micron, the thickness of hinge 206 is 0.05 to 0.45 micron) and material (for example monocrystalline silicon (100)), can make the operating voltage of reflective SLM 100 that several volts are only arranged.The modulus of shearing of the torsion hinge of being made by monocrystalline silicon 206 can be every square metre of every radian 5 * 10 for example 10 Newton.By reflecting optics 204 being remained on (" negative bias ") rather than ground connection under the suitable voltage, can make electrode 126 operation make the voltage of associated mirror plate 204 complete deflections even littler.For the given voltage that is applied to electrode 126, this causes bigger deflection angle.Maximum negative bias voltage is a release voltage, so when addressing voltage was reduced to zero, reflecting optics 204 can the undeflected position of rebound.
Can also control reflecting optics 204 deflections in the mode of " simulation " more.Apply less than the voltage of " fastening voltage " with deflecting reflection eyeglass 204 and control the direction of incident light reflection.
Interchangeable application:
Except video display, spatial light modulator 100 also can be used in other application.A kind of application like this is a maskless lithography, and 100 pairs of light of its spatial light modulator lead so that the photoresist developing that deposits.This just no longer needs to be used for photoresist with the correct mask that develops of desirable pattern.
Although specifically illustrate and illustrated the present invention with reference to a plurality of embodiment, those skilled in the art will appreciate that under the situation that does not break away from the spirit and scope of the present invention, can carry out the various changes on form and the details therein.For example, reflecting optics 204 also can come deflection by the additive method except electrostatic attraction.Reflecting optics 204 can replace with magnetic, heat or Piezoelectric Driving and come deflection.

Claims (50)

1. the method for a making space photomodulator comprises:
Form first substrate that limits cavity;
On second substrate, make electrode;
Described first substrate is attached to described second substrate; With
On described first substrate, form hinge and reflecting optics; And
Applying reflecting surface on the reflecting optics and above the part of described hinge, the area of described reflecting surface is greater than the upper surface area of described reflecting optics.
2. method according to claim 1, wherein said reflecting surface are covered the described hinge relevant with described reflecting optics.
3. method according to claim 1, wherein said hinge are formed at the upper surface below of described reflecting optics and are covered by described reflecting surface.
4. method according to claim 1, described first substrate in the wherein said spatial light modulator is a single piece of material.
5. method according to claim 1, described first substrate in the wherein said spatial light modulator is a monocrystalline silicon.
6. method according to claim 1 also is included in and forms the sports limiting device on the lower surface of described reflecting optics.
7. method according to claim 6 also is included in the position of admitting described sports limiting device on described second substrate and forms the overlap joint contact.
8. method according to claim 1 also is included in described first substrate is attached to before described second substrate, makes addressing and control circuit on described second substrate.
9. method according to claim 1, the centre-height coplane of the centre-height of wherein said hinge and described reflecting optics.
10. method according to claim 1, wherein said cavity is defined by the spacer support walls on the frame with spacer support in described first substrate.
11. method according to claim 1, wherein said circuit forms with complementary metal oxide semiconductor techniques.
12. method according to claim 1, the step that wherein forms first substrate that limits cavity comprises:
Obtain described first substrate, described first substrate has the device layer of predetermined thickness;
Deposit dielectric material on the described device layer of described first substrate;
The described dielectric substance of etching is to produce opening in the pre-position;
The material that growth and described device layer have same crystal structure in described opening; And
Remove described dielectric substance.
13. method according to claim 12, wherein said device layer is a single crystal silicon material, and wherein said first substrate comprises insulation oxide layer on the described device layer and the manipulation substrate on the described insulation oxide layer.
14. method according to claim 12, the thickness of wherein said device layer is between 0.2 micron and 0.4 micron.
15. method according to claim 12, wherein said dielectric substance is a monox.
16. method according to claim 12, wherein the described material of growing in described opening is grown by epitaxial growth technology.
17. method according to claim 1, the step that wherein forms first substrate that limits cavity comprises:
On described first substrate, arrange mask, the second portion that described mask has the first that limits described empty cavity position and the position of the supporting walls that defines described cavity is limited, described first exposes described first below described first substrate to be etched, and described second portion can prevent that described first substrate of described second portion below is etched;
Described first substrate etching below the described first of described mask is arrived predetermined thickness; And
Remove described mask from described substrate.
18. method according to claim 1, the step of wherein making electrode on second substrate comprises:
With passivation layer coverage control circuit;
Plated metal layer on described passivation layer;
With the pattern that will limit described electrode with described metal layer patterning; And
The described metal layer of etching is to stay the material that constitutes described electrode.
19. method according to claim 1, wherein the step that described first substrate is attached to described second substrate comprises:
With respect to described second substrate alignment, the described electrode on described second substrate is in the position of relevant micro-reflector deflection in described first substrate of control described first substrate; And
With the low temperature bond method in conjunction with described first substrate and described second substrate.
20. method according to claim 1, the step that wherein forms hinge and reflecting optics on described first substrate comprises:
The top layer of described first substrate is thinned to predetermined thickness;
On described first substrate below the described upper surface of cutting the first thin substrate the described hinge of etching;
Sacrifice layer is deposited on described first substrate;
Described first substrate planeization is removed described sacrifice layer with the described upper surface from described first substrate;
Disengage described reflecting optics by described first substrate of etching; And
Remove on the described hinge and described sacrifice layer on every side so that described reflecting optics can rotate around the axis that limits by described hinge.
21. method according to claim 20, the step that wherein top layer of described first substrate is thinned to predetermined thickness comprises:
By grind and/or etching to remove the manipulation substrate in described first substrate; And
Peel off the insulation oxide layer in described first substrate.
22. method according to claim 20, wherein the step of the described hinge below the described upper surface of cutting the first thin substrate on described first substrate of etching comprises:
In the described upper surface of described first substrate, etch depression; And
Described first substrate of etching keeps two ends of described hinge to be connected to described first substrate to disengage described hinge from described first substrate.
23. method according to claim 20, wherein the step that sacrifice layer is deposited on described first substrate comprises:
Fill on the described hinge and gap on every side with described sacrifice layer; And
The described sacrifice layer of deposition on the described upper surface of described first substrate.
24. method according to claim 20 wherein comprises described first substrate planeization with etchback step or chemical mechanical processing technology with the step of removing described sacrifice layer and removes described sacrifice layer.
25. method according to claim 20 is wherein removed on the described hinge and the step of described sacrifice layer on every side comprises and uses plasma etching industrial.
26. method according to claim 1 wherein comprises in the step of coating reflecting surface on the reflecting optics and above the part of described hinge:
Deposition of aluminum on the upper surface of described first substrate; And
Deposition of aluminum above the part of described hinge, the thickness of wherein said aluminium are 300 dusts or littler.
27. a manufacturing is used for the method for a plurality of catoptrons of spatial light modulator, comprising:
In first of first substrate, form cavity;
Top layer on second of described first substrate is thinned to predetermined thickness;
On described second of described first substrate below the described upper surface of cutting the first thin substrate etching hinge;
Deposition of sacrificial layer on described second of described first substrate;
Described second facial planeization with described first substrate;
Deposition of reflective surface on described second of described first substrate;
Disengage catoptron by etching;
Remove on the described hinge and described sacrifice layer on every side so that described catoptron can rotate around the axis that limits by described hinge,
Wherein, described reflecting surface is deposited on the described upper surface of described first substrate and the part top of described hinge, and the area of described reflecting surface is greater than the upper surface area of reflecting optics.
28. manufacturing according to claim 27 is used for the method for a plurality of catoptrons of spatial light modulator, wherein said reflecting surface covers described hinge.
29. method according to claim 27, the step that wherein forms cavity in first of first substrate comprises:
Look unfamiliar by described first of described first substrate and to become to limit the mask in zone to be etched;
Remove described first material of going up in the zone that limits by described mask of described first substrate, in described first of described first substrate, to form described cavity.
30. method according to claim 27, the step that wherein forms cavity in first of first substrate comprises:
Obtain described first substrate, described first substrate has the device layer of predetermined thickness;
Deposit dielectric material on the described device layer of described first substrate;
The described dielectric substance of etching produces opening with the supporting walls place in frame with spacer support to be produced;
The material that growth and described device layer have same crystal structure in described opening; And
Remove described dielectric substance.
31. method according to claim 30, wherein said first substrate also have insulation oxide layer on the described device layer and the manipulation substrate on the described insulation oxide layer, and the thickness of wherein said device layer is between 2 microns and 3 microns.
32. method according to claim 29, the step of wherein removing the material in the zone that described first substrate limits by described mask comprises described first substrate of etching.
33. method according to claim 29, the step of wherein removing the material in the zone that described first substrate limits by described mask has been included in SF 6, carry out anisotropic rie under HBr and the oxygen gas situation about flowing.
34. method according to claim 31, the step of wherein cutting the top layer of second of thin described first substrate comprises:
Remove described manipulation substrate by grinding and/or etching; And
Peel off described insulation oxide layer.
35. method according to claim 27, the step of wherein cutting the top layer of second of thin described first substrate comprise from by the technology of grinding, selecting silicon eat-backs, wet etching and plasma etching are formed the group.
36. method according to claim 27, wherein the step of etching hinge comprises first etching that the upper surface on described second that enters described first substrate caves in formation under described upper surface, and second etching of partly being disengaged described hinge by the reflecting optics of described first substrate.
37. method according to claim 27 also is included in etching sports limiting device on the lower surface of the described reflecting optics in described first substrate.
38. the method for a making space photomodulator, described spatial light modulator comprise the array that a plurality of catoptrons are formed, described method comprises:
Look unfamiliar by first of first substrate and to become to limit the mask in zone to be etched;
Described first last zone that is limited by described mask of described first substrate of etching is to form a plurality of cavitys in described first of described first substrate;
On first of second substrate, make electrode;
Described first face of described first substrate is attached to described first of described second substrate;
Top layer on second of described first substrate is thinned to predetermined thickness;
Etching hinge in described first substrate;
Deposition of sacrificial layer on described first substrate;
Described first substrate planeization is removed described sacrifice layer with the upper surface from described second of described first substrate, stay on the described hinge and expendable material on every side;
On deposition of reflective surface on the described upper surface and above the part of described hinge;
Disengage catoptron by etching;
Remove remaining sacrifice layer so that described catoptron can rotate around the axis that is limited by described hinge from described first substrate,
Wherein, the area of described reflecting surface is greater than the upper surface area of described reflecting optics.
39. according to the method for the described making space photomodulator of claim 38, wherein said reflecting surface covers described hinge.
40. according to the method for the described making space photomodulator of claim 38, wherein said hinge is formed at the upper surface below of described first substrate and is covered by described reflecting surface.
41. according to the described method of claim 38, wherein described first zone that is upward limited by described mask of described first substrate of etching has been included in SF with the step that forms a plurality of cavitys in described first of described first substrate 6, carry out anisotropic rie under HBr and the oxygen gas situation about flowing.
42., go up before the manufacturing electrode, on described first of described second substrate, form control circuit for described first that also is included in described second substrate according to the described method of claim 38.
43. according to the described method of claim 42, the step that wherein forms control circuit on described first of described second substrate comprises makes buffer memory, display controller and pulse width modulation array.
44. according to the described method of claim 38, the step of wherein making electrode on described first of described second substrate comprises:
Cover the control circuit of manufacturing with passivation layer;
Plated metal layer on described passivation layer;
With the pattern that will limit described electrode with described metal layer patterning; And
The described metal layer of etching is to stay the material that constitutes described electrode.
45. according to the described method of claim 38, described first face with described first substrate of also being included in is attached to before described first of described second substrate, described first substrate and described second substrate alignment are made when described first substrate and second substrate combine the described electrode on described second substrate is positioned and controls mirror deflection in described first substrate.
46., wherein described first substrate and the step of described second substrate alignment are comprised the pattern on described first substrate are aimed at the pattern on described second substrate according to the described method of claim 45.
47. according to the described method of claim 38, described first step that wherein described first face of described first substrate is attached to described second substrate comprises the low temperature bond method that use is carried out under less than 400 degrees centigrade.
48. according to the described method of claim 38, wherein the step of the described hinge of etching comprises that the described upper surface that enters described first substrate is to form first etching that caves in and second etching of partly being disengaged described hinge by the reflecting optics of described first substrate under described upper surface.
49. according to the described method of claim 38, also be included in etching sports limiting device on the lower surface of described catoptron, and wherein said reflecting surface is deposited on the described upper surface of described first substrate and the part top of described hinge.
50. the method for an operating space photomodulator comprises:
In the micro reflector array of described spatial light modulator, select to want the micro-reflector of deflection, the described micro-reflector of in the described micro reflector array each comprises reflecting optics and hinge and has reflecting surface, described reflecting surface covers described hinge and will incide light deflection on the described micro-reflector, and the area of described reflecting surface is greater than the upper surface area of described reflecting optics; And
Between selected micro-reflector and the electrode relevant, apply voltage difference so that described micro-reflector deflection with selected micro-reflector.
CNB2004800209469A 2003-06-02 2004-02-12 Manufacture of high fill ratio reflective spatial light modulator with hidden hinge Expired - Fee Related CN100410722C (en)

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