CN100420045C - Gallium nitride series luminous diode - Google Patents
Gallium nitride series luminous diode Download PDFInfo
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- CN100420045C CN100420045C CNB2004100801434A CN200410080143A CN100420045C CN 100420045 C CN100420045 C CN 100420045C CN B2004100801434 A CNB2004100801434 A CN B2004100801434A CN 200410080143 A CN200410080143 A CN 200410080143A CN 100420045 C CN100420045 C CN 100420045C
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Abstract
The present invention relates to a GaN-system LED. The structure of the present invention has the main difference from an existing GaN-system LED that a thin layer positioned on a p-type contact layer is formed by the silicon nitride (SiN) and one of the short period superlattice structures, wherein one short period superlattice structure is formed by silicon nitride (SiN) and undoped indium-gallium nitride (InGaN), and the other short period superlattice structure is formed by silicon nitride and undoped aluminium-indium-gallium (AlGaInN) nitride. Because the silicon nitride material grows on the thin layer, the surface of the GaN-system LED is slightly roughened. Consequently, the present invention can avoid the internal total reflection caused by the refractivity of the GaN-system LED higher than that of the air and improve the external quantum efficiency and the luminous efficiency of the GaN-system LED further.
Description
Technical field
The present invention relates to a kind of GaN series LED, particularly relate to the high-brightness GaN series LED of the little alligatoring in a kind of surface (Micro-roughened).
Background technology
Gallium nitride (GaN) series LED, owing to can produce the light-emitting diode of various coloured light by the composition of control material, so its correlation technique becomes the focus of the positive research and development of industrial circle and academia in recent years.Academia and industrial circle are to understand the characteristics of luminescence of GaN series LED, and then propose to promote the method for its luminous efficiency and brightness one of research emphasis of GaN series LED.The GaN series LED of this high efficiency and high brightness, can effectively be applied to fields such as outdoor display board, automobile-used illumination future.
The luminous efficiency of GaN series LED, main relevant with the internal quantum (Internal Quantum Efficiency) and the external quantum efficiency (External QuantumEfficiency) of GaN series LED.The former with the GaN series LED active layers in electronics electricity hole in conjunction with so that to discharge the probability of photon relevant.Electronics electricity hole is easy more compound, and photon is easy to generate more, and internal quantum is just high more, and the luminous efficiency of GaN series LED is also just high more usually.The latter then is not subjected to the absorption of GaN series LED itself relevant with the probability that influences, successfully breaks away from GaN series LED with photon.Multi-photon can be discharged into outside the GaN series LED more, and external quantum efficiency is just high more, and the luminous efficiency of GaN series LED is also just high more usually.
The external quantum efficiency of GaN series LED depends primarily on structure and its refractive index on its top layer, top.The refractive index of existing GaN series LED and air is respectively 2.5 and 1.Because the refractive index of existing GaN series LED is higher, be easy to form inner full-reflection.The photon that is generated is because the cause of inner full-reflection be not easy to be discharged into outside the GaN series LED very much, thereby the external quantum efficiency of GaN series LED is severely limited usually.
Summary of the invention
The purpose of this invention is to provide a kind of GaN series LED, it can actual restriction and the defective that solves in the aforementioned related art.
To achieve these goals, the invention provides a kind of GaN series LED, it comprises:
Substrate, it is by alumina single crystal, 6H-SiC, 4H-SiC, Si, ZnO, GaAs, spinelle (MgAl
2O
4) and lattice constant to approach the monocrystalline oxide of nitride-based semiconductor made;
Resilient coating, it is positioned on the side of this substrate, by the aluminum indium gallium nitride (Al with specific composition
aGa
bIn
1-a-bN, 0≤a, b＜1, a+b≤1) constitute;
N type contact layer, it is positioned on this resilient coating, is made of gallium nitride based material;
Active layers, it is positioned on this n type contact layer, and covers the partly upper surface of this n type contact layer, is made of InGaN;
Negative electrode, it is positioned on the upper surface that this n type contact layer do not cover by this active layers;
P type coating, it is positioned on this active layers, is made of the gallium nitride based material of p type;
P type contact layer, it is positioned on this p type coating, is made of p type gallium nitride;
Little alligatoring thin layer, it is positioned on this p type contact layer, and a kind of in three kinds of materials of short period superlattice structure that short period superlattice structure of being made up of silicon nitride (SiN), silicon nitride and unadulterated InGaN (InGaN) and silicon nitride and unadulterated aluminum indium nitride gallium (AlGaInN) are formed constitutes;
Transparency conducting layer, it is metal conducting layer or the transparent oxide layer that is positioned on this little alligatoring thin layer and covers its part surface, this metal conducting layer is to be made of a kind of institute in Ni/Au alloy, Ni/Pt alloy, Ni/Pd alloy, Pd/Au alloy, Pt/Au alloy, Cr/Au alloy, Ni/Au/Be alloy, Ni/Cr/Au alloy, Ni/Pt/Au alloy, the Ni/Pd/Au alloy, and this transparent oxide layer is by ITO, CTO, ZnO:Al, ZnGa
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn, In
2O
3: Zn, CuAlO
2, LaCuOS, NiO, CuGaO
2, SrCu
2O
2In a kind ofly constitute; And
Positive electrode, it is positioned on the surface that is not covered by this transparency conducting layer on this little alligatoring thin layer, by Ni/Au alloy, Ni/Pt alloy, Ni/Pd alloy, Ni/Co alloy, Pd/Au alloy, Pt/Au alloy, Ti/Au alloy, Cr/Au alloy, Sn/Au alloy, Ta/Au alloy, TiN, TiWN
x(x 〉=0), WSi
yA kind of in (y 〉=0) constitutes.
GaN series LED proposed by the invention, its structure and the topmost difference of existing GaN series LED are, utilize a kind of in the short period superlattice structure that short period (Short Period) superlattice (Superlattice) structure that silicon nitride (SiN), silicon nitride and unadulterated InGaN (InGaN) form and silicon nitride and unadulterated aluminum indium nitride gallium (AlGaInN) form, formation is positioned at the thin layer on the p type contact layer.On this thin layer, because the growth of its silicon nitride material, make the surface of GaN series LED by little alligatoring.Like this, can avoid GaN series LED to have high refractive index and cause inner full-reflection, and then promote the external quantum efficiency and the luminous efficiency of GaN series LED than air.
Fig. 1 is the brightness data figure of GaN series LED under different injection currents existing and that make according to the present invention.As shown in Figure 1, GaN series LED has aforementioned by silicon nitride and unadulterated InGaN (In
0.2Ga
0.8N) formed short period superlattice thin layer, it has better luminous efficiency than existing GaN series LED significantly.
Except above-mentioned advantage, owing to form the low energy gap characteristic of the material of this thin layer, can also make the metal electrode of GaN series LED and the resistance between transparency conducting layer and the thin layer, the former two and the resistance between the p type contact layer than existing GaN series LED are lower, therefore also easier formation ohmic contact.
Description of drawings
Below in conjunction with the drawings and specific embodiments, the present invention will be described in more detail.
Fig. 1 is the brightness data figure of GaN series LED under different injection currents existing and that make according to the present invention;
Fig. 2 is the schematic diagram of the embodiment 1 of GaN series LED of the present invention;
Fig. 3 is the schematic diagram of the embodiment 2 of GaN series LED of the present invention;
Fig. 4 is the schematic diagram of the embodiment 3 of GaN series LED of the present invention.
Embodiment
Embodiment 1
Fig. 2 is the schematic diagram of the embodiment 1 of GaN series LED of the present invention.As shown in Figure 2, this embodiment 1 be with the alumina single crystal (Sapphire) of C-Plane or R-Plane or A-Plane or carborundum (6H-SiC or 4H-SiC) as substrate 10, other material that can be used for substrate 10 also comprises Si, ZnO, GaAs or spinelle (MgAl
2O
4), or lattice constant approaches the monocrystalline oxide of nitride-based semiconductor.Then, form by aluminum indium gallium nitride (Al in a side of this substrate 10 with specific composition
aGa
bIn
1-a-bN, 0≤a, b＜1, a+b≤1) resilient coating 20 that is constituted and the n type contact layer 30 on this resilient coating 20, this n type contact layer 30 is to be that material constitutes by gallium nitride (GaN).Then, form active layers 40 on this n type contact layer 30, this active layers 40 is the upper surfaces that constituted and covered part n type contact layer 30 by InGaN.Part in that n type contact layer 30 upper surfaces are not covered by active layers 40 is formed with negative electrode 42 in addition.
This embodiment 1 then forms p type coating 50 on active layers 40.This p type coating 50 is made of gallium nitride based material.On this p type coating 50, then be that material is the p type contact layer 60 of p type gallium nitride.On this p type contact layer 60, be little alligatoring thin layer 70 of emphasis of the present invention.In this embodiment 1, little alligatoring thin layer 70 is by silicon nitride (Si
dN
e, 0＜d, e＜1) constitute, its thickness is between 2
～50
Between, the growth temperature is between 600 ℃～1100 ℃.
Above little alligatoring thin layer 70, this embodiment 1 further forms the positive electrode 80 and transparency conducting layer 82 of non-overlapping copies respectively.This positive electrode 80 can be by Ni/Au alloy, Ni/Pt alloy, Ni/Pd alloy, Ni/Co alloy, Pd/Au alloy, Pt/Au alloy, Ti/Au alloy, Cr/Au alloy, Sn/Au alloy, Ta/Au alloy, TiN, TiWN
x(x 〉=0), WSi
yA kind of or other metalloid material in (y 〉=0) etc. constitutes.This transparency conducting layer 82 can be metal conducting layer or transparent oxide layer.This metal conducting layer is made of one of Ni/Au alloy, Ni/Pt alloy, Ni/Pd alloy, Pd/Au alloy, Pt/Au alloy, Cr/Au alloy, Ni/Au/Be alloy, Ni/Cr/Au alloy, Ni/Pt/Au alloy, Ni/Pd/Au alloy and other similar material.This transparent oxide layer is by ITO, CTO, ZnO:Al, ZnGa
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn, In
2O
3: Zn, CuAlO
2, LaCuOS, NiO, CuGaO
2, SrCu
2O
2In a kind ofly constitute.
Embodiment 2
Fig. 3 is the schematic diagram of the embodiment 2 of GaN series LED of the present invention.As shown in Figure 3, this embodiment 2 has identical structure and pattern of growth with embodiment 1.Unique difference is in little alligatoring thin layer used material and structure.In this embodiment 2, little alligatoring thin layer 72 is to repeat stacked formed short period superlattice structure alternately by thin layer of sin 721 and InGaN thin layer 722.Each thin layer of sin 721 all is by the silicon nitride (Si with its specific composition
fN
gN, 0＜f, g＜1) constitute, its thickness is all between 2
～20
Between, the growth temperature is also all between 600 ℃～1100 ℃.The silicon nitride composition of different thin layer of sin 721 (be the parameter f of aforementioned molecular formula, g) not necessarily identical.Each InGaN thin layer 722 all is by the InGaN (In that does not mix, has its specific composition
hGa
1-hN, 0＜h≤1) constitute, its thickness is all between 2
～20
Between, the growth temperature is also all between 600 ℃～1100 ℃.It is not necessarily identical that the InGaN of different InGaN thin layers 722 is formed (being the parameter h of aforementioned molecular formula).
In this little alligatoring thin layer 72, the bottom (promptly being located immediately on the p type contact layer) can be a thin layer of sin 721, stacks gradually InGaN thin layer 722, thin layer of sin 721 on it again, and the rest may be inferred.Perhaps the bottom can be an InGaN thin layer 722 also, stacks gradually thin layer of sin 721, InGaN thin layer 722 on it again, and the rest may be inferred.Thin layer of sin 721 and InGaN thin layer 722 mode according to this repeat stackedly alternately, and its number of repetition is (number of plies that is the number of plies of thin layer of sin 721 and InGaN thin layer 722 is all more than or equal to two) more than or equal to two.The gross thickness of little alligatoring thin layer 72 is no more than 200
Embodiment 3
Fig. 4 is the schematic diagram of the embodiment 3 of GaN series LED of the present invention.As shown in Figure 4, this embodiment 3 has identical structure and pattern of growth with the foregoing description 1,2.Unique difference is in little alligatoring thin layer used material and structure.In this embodiment 3, little alligatoring thin layer 74 is to repeat stacked formed short period superlattice structure alternately by thin layer of sin 741 and aluminum indium nitride gallium thin layer 742.Each thin layer of sin 741 all is by the silicon nitride (Si with its specific composition
iN
jN, 0＜i, j＜1) constitute, its thickness is all between 2
～20
Between, the growth temperature is also all between 600 ℃～1100 ℃.The silicon nitride composition of different thin layer of sin 741 (be the parameter i of aforementioned molecular formula, j) not necessarily identical.Each aluminum indium nitride gallium thin layer 742 all is by the aluminum indium nitride gallium (Al that does not mix, has its specific composition
mIn
nGa
1-m-nN, 0＜m, n＜1, m+n＜1) constitute, its thickness is all between 2
～20
Between, the growth temperature is also all between 600 ℃～1100 ℃.The aluminum indium nitride gallium composition of different aluminum indium nitride gallium thin layers 742 (be the parameter m of aforementioned molecular formula, n) not necessarily identical.
In this little alligatoring thin layer 74, the bottom (promptly being located immediately on the p type contact layer) can be a thin layer of sin 741, stacks gradually aluminum indium nitride gallium thin layer 742, thin layer of sin 741 on it again, and the rest may be inferred.Perhaps the bottom also can be an aluminum indium nitride gallium thin layer 742, stacks gradually thin layer of sin 741, aluminum indium nitride gallium thin layer 742 on it again, and the rest may be inferred.Thin layer of sin 741 and aluminum indium nitride gallium thin layer 742 mode according to this repeat stackedly alternately, and its number of repetition is (number of plies that is the number of plies of thin layer of sin 741 and aluminum indium nitride gallium thin layer 742 is all more than or equal to two) more than or equal to two.The gross thickness of little alligatoring thin layer 74 is no more than 200
In aforesaid three embodiment, because the growth of silicon nitride material in little alligatoring thin layer, make the surface of GaN series LED by little alligatoring.Can avoid GaN series LED to have high refractive index and cause inner full-reflection like this, and then promote the external quantum efficiency and the luminous efficiency of GaN series LED than air.
Above-described only is in order to explain preferred embodiment of the present invention; be not to limit the invention by any way; therefore, all any modification relevant of the present invention or changes of being done under identical invention spirit all must be included in the protection category of the present invention.
Claims (3)
1. a GaN series LED is characterized in that, comprising:
Substrate, it is by alumina single crystal, 6H-SiC, 4H-SiC, Si, ZnO, GaAs, spinelle MgAl
2O
4The monocrystalline oxide that approaches nitride-based semiconductor with lattice constant is made;
Resilient coating, it is positioned on the side of this substrate, by the aluminum indium gallium nitride Al with specific composition
aGa
bIn
1-a-bN constitutes, wherein, and 0≤a, b＜1, a+b≤1;
N type contact layer, it is positioned on this resilient coating, is made of gallium nitride based material;
Active layers, it is positioned on this n type contact layer, and covers the partly upper surface of this n type contact layer, is made of InGaN;
Negative electrode, it is positioned on the upper surface that this n type contact layer do not cover by this active layers;
P type coating, it is positioned on this active layers, is made of the gallium nitride based material of p type;
P type contact layer, it is positioned on this p type coating, is made of p type gallium nitride;
Little alligatoring thin layer, it is positioned on this p type contact layer,
By silicon nitride Si with specific composition
dN
eConstitute, thickness between
Between, 0＜d wherein, e＜1,
Perhaps by the silicon nitride Si that has specific composition separately
fN
gN and unadulterated InGaN In with specific composition
hGa
1-hThe short period superlattice structure of the stacked formation of N constitutes, 0＜f wherein, and g＜1,0＜h≤1,
Perhaps by silicon nitride Si with specific composition
iN
jN and unadulterated aluminum indium nitride gallium Al with specific composition
mIn
nGa
1-m-nThe short period superlattice structure of the stacked formation of N constitutes, 0＜i wherein, and j＜1,0＜m, n＜1, m+n＜1,
And the gross thickness of described little alligatoring thin layer is no more than
Transparency conducting layer, it is metal conducting layer or the transparent oxide layer that is positioned on this little alligatoring thin layer and covers this little alligatoring thin layer part surface, this metal conducting layer is to be made of a kind of institute in Ni/Au alloy, Ni/Pt alloy, Ni/Pd alloy, Pd/Au alloy, Pt/Au alloy, Cr/Au alloy, Ni/Au/Be alloy, Ni/Cr/Au alloy, Ni/Pt/Au alloy, the Ni/Pd/Au alloy, and this transparent oxide layer is by ITO, CTO, ZnO:Al, ZnGa
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn, In
2O
3: Zn, CuAlO
2, LaCuOS, NiO, CuGaO
2, SrCu
2O
2In a kind ofly constitute; And
Positive electrode, it is positioned on the surface that is not covered by this transparency conducting layer on this little alligatoring thin layer, by Ni/Au alloy, Ni/Pt alloy, Ni/Pd alloy, Ni/Co alloy, Pd/Au alloy, Pt/Au alloy, Ti/Au alloy, Cr/Au alloy, Sn/Au alloy, Ta/Au alloy, TiN, TiWN
x, WSi
yIn a kind ofly constitute x 〉=0 wherein, y 〉=0.
2. GaN series LED according to claim 1, wherein, this little alligatoring thin layer is by the silicon nitride Si with specific composition
fN
gN thin layer and InGaN In with specific composition
hGa
1-hThe N thin layer repeats stacked formed short period superlattice structure alternately, and its number of repetition is at least secondary, and gross thickness is no more than
Each silicon nitride Si
fN
gThe thickness of N thin layer all between
Between, each InGaN In
hGa
1-hThe thickness of N thin layer all between
Between, 0＜f wherein, g＜1,0＜h≤1.
3. GaN series LED according to claim 1, wherein, this little alligatoring thin layer is by the silicon nitride Si with specific composition
iN
jN thin layer and aluminum indium nitride gallium Al with specific composition
mIn
nGa
1-m-nThe N thin layer repeats stacked formed short period superlattice structure alternately, and its number of repetition is at least secondary, and gross thickness is no more than
Each silicon nitride Si
iN
jThe thickness of N thin layer all between
Between, each aluminum indium nitride gallium Al
mIn
nGa
1-m-nThe thickness of N thin layer all between
Between, 0＜i wherein, j＜1,0＜m, n＜1, m+n＜1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100801434A CN100420045C (en) | 2004-09-23 | 2004-09-23 | Gallium nitride series luminous diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100801434A CN100420045C (en) | 2004-09-23 | 2004-09-23 | Gallium nitride series luminous diode |
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|---|---|
| CN1753199A CN1753199A (en) | 2006-03-29 |
| CN100420045C true CN100420045C (en) | 2008-09-17 |
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| CNB2004100801434A Active CN100420045C (en) | 2004-09-23 | 2004-09-23 | Gallium nitride series luminous diode |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008071038A1 (en) * | 2006-12-15 | 2008-06-19 | Podium Photonics (Guangzhou) Ltd. | Gan led chip and the method of the same |
| KR100974923B1 (en) * | 2007-03-19 | 2010-08-10 | 서울옵토디바이스주식회사 | Light emitting diode |
| CN101420003B (en) * | 2007-10-24 | 2011-11-30 | 泰谷光电科技股份有限公司 | Manufacturing method for LED |
| CN102169929A (en) * | 2011-02-25 | 2011-08-31 | 聚灿光电科技(苏州)有限公司 | Manufacturing method of light-emitting diode (LED) with high light-extraction rate |
| CN103178184A (en) * | 2011-12-23 | 2013-06-26 | 亿光电子工业股份有限公司 | Light-emitting diode structure |
| CN105350074A (en) * | 2015-11-03 | 2016-02-24 | 湘能华磊光电股份有限公司 | Epitaxial growth method for improving LED epitaxial crystal quality |
| CN115064622B (en) * | 2022-08-18 | 2022-11-18 | 江西兆驰半导体有限公司 | Composite N-type GaN layer, light emitting diode epitaxial wafer and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6172382B1 (en) * | 1997-01-09 | 2001-01-09 | Nichia Chemical Industries, Ltd. | Nitride semiconductor light-emitting and light-receiving devices |
| US20020096687A1 (en) * | 2001-01-19 | 2002-07-25 | Daniel Kuo | Light emitting diode |
| US20040159851A1 (en) * | 2003-02-13 | 2004-08-19 | Edmond John Adam | Group III nitride contact structures for light emitting devices |
-
2004
- 2004-09-23 CN CNB2004100801434A patent/CN100420045C/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6172382B1 (en) * | 1997-01-09 | 2001-01-09 | Nichia Chemical Industries, Ltd. | Nitride semiconductor light-emitting and light-receiving devices |
| US20020096687A1 (en) * | 2001-01-19 | 2002-07-25 | Daniel Kuo | Light emitting diode |
| US20040159851A1 (en) * | 2003-02-13 | 2004-08-19 | Edmond John Adam | Group III nitride contact structures for light emitting devices |
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| CN1753199A (en) | 2006-03-29 |
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Effective date of registration: 20091211 Address after: Taoyuan County of Taiwan Province Co-patentee after: LUMENS Limited by Share Ltd Patentee after: Bright circle Au Optronics Co Address before: Taoyuan County of Taiwan Province Patentee before: Formosa Epitaxy Incorporation |