CN100421266C - 具有多个发光元件的发光装置 - Google Patents

具有多个发光元件的发光装置 Download PDF

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CN100421266C
CN100421266C CNB038206226A CN03820622A CN100421266C CN 100421266 C CN100421266 C CN 100421266C CN B038206226 A CNB038206226 A CN B038206226A CN 03820622 A CN03820622 A CN 03820622A CN 100421266 C CN100421266 C CN 100421266C
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酒井士郎
敖金平
大野泰夫
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Seoul Semiconductor Co Ltd
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Abstract

一种在高驱动电压和低驱动电流下工作的发光装置。在蓝宝石等绝缘基板(10)上,以二维单片式形成多个LED(1),将多个LED(1)串联连接成为LED阵列。2组LED阵列以相反极性连接到电极(32)。LED(1)之间及LED(1)与电极(32)之间为架空桥式布线(28)。通过曲折状配置LED阵列,形成多个LED(1),获得高驱动电压和低驱动电流。由于2个LED阵列极性相反,因此电源可以使用交流电源。

Description

具有多个发光元件的发光装置
技术领域
本发明涉及一种在基板上形成有多个发光元件的发光装置.
背景技术
在发光元件(LED)等发光单元被用于显示用途等的情况下,其使用条件为:驱动电压约1~4V,驱动电流约20mA.然而,近年来开发出了使用GaN系化合物半导体的短波长LED,随着全彩色和白色等固体光源的实用化,逐渐出现了将LED用于照明用途的探讨研究.将LED用于照明用途时,所出现的问题是,其使用条件不同于上述驱动电压约1~4V、驱动电流约20mA那样的使用条件.因此,需要致力于使LED具有更大的电流,增大发光输出.为了产生大电流,需要增大LED的pn结面积,控制电流密度,使其变小.
将LED作为照明光源使用时,使用交流电作为电源,能够在100V以上的驱动电压下使用,非常方便.另外,如果投入相同的电力可以获得相同的发光输出,则保持低电流值的同时施加高电压可以减小电力损失.但是,现有的LED中,不能充分提高驱动电压.
发明内容
本发明的目的在于提供能够在高驱动电压下进行工作的发光装置.
本发明的特征在于,绝缘基板上形成多个GaN系发光元件,上述多个发光元件单片式串联连接.
这里,最好是上述多个发光元件在上述基板上呈二维配置.
另外,可以将上述多个发光元件分为2组,并联连接以使2个电极相互极性相反.
上述多个发光元件之间的连接可以使用架空桥式(air-bridge)布线.
上述多个发光元件之间的电分离可以利用作为上述基板使用的蓝宝石来进行.
另外,可以将上述多个发光元件分为数量相同的2组,各组发光元件阵列配置为曲折状,并且,2组发光元件阵列并联连接以使2个电极相互极性相反,也可以将上述2组发光元件阵列配置为互不相同.
另外,上述发光元件和电极的平面形状可以是近似正方形或三角形.
另外,上述多个发光元件和电极也可以配置为整体形状近似正方形.
在本发明中,电极可以是交流电源用电极.
另外,上述2组发光元件阵列也可以具有共同的n电极.
在本发明中,多个发光元件形成为单片式,即形成在同一基板上,通过将它们串联连接,就可以获得高驱动电压.将多个发光元件连接于一个方向使直流驱动成为可能,但也可以将多个发光元件分为2组连接到电极,使各组发光元件(发光元件阵列)成为极性相反,以此使交流驱动也成为可能.各组数量可以相等,也可以不相等.
二维配置多个发光元件的方法有多种,但最好是使基板专用面积尽可能小.例如,将2组发光元件阵列分别配置为曲折状,即将多个发光元件配置于曲折的直线上,各个发光元件阵列配置得互不相同,由此可以有效地利用基板面积,连接多个发光元件.将2组发光元件阵列配置得互不相同,会产生布线的交叉部分,但是通过在发光元件之间使用架空桥式布线进行连接,就可以有效地防止交叉部分的短路.发光元件和电极的形状可以是任意的,例如可以使用标准的安装结构,平面形状采用近似正方形从而整体形状也呈近似正方形.除了正方形之外,发光元件和电极在例如呈三角形时,如果对这些三角形状进行组合从而使整体形成近似正方形,同样也能够使用标准的安装结构.
附图说明
图1是发光元件(LED)的基本结构图.
图2是发光装置的等效电路图.
图3是2个LED的平面图.
图4是图3的IV-IV剖视图.
图5是发光装置的另一等效电路图.
图6是二维排列40个LED的说明图.
图7是图6的电路图.
图8是二维排列6个LED的说明图.
图9是图8的电路图.
图10是二维排列14个LED的说明图.
图11是图10的电路图.
图12是二维排列6个LED的说明图.
图13是图12的电路图.
图14是二维排列16个LED的说明图.
图15是图14的电路图.
图16是排列2个LED的说明图.
图17是图16的电路图.
图18是二维排列4个LED的说明图.
图19是图18的电路图.
图20是二维排列3个LED的说明图.
图21是图20的电路图.
图22是二维排列6个LED的说明图.
图23是图22的电路图.
图24是二维排列5个LED的说明图.
图25是图24的电路图.
图26是另一个二维配置说明图.
图27是图26的电路图.
图28是另一个二维配置说明图.
图29是图28的电路图.
图30是另一个二维配置说明图.
图31是图30的电路图.
具体实施方式
下面根据附图说明本发明的实施方式.
图1中表示了本实施方式中用作GaN系化合物半导体发光元件的LED1的基本结构.LED1的结构是:在基板10上依次层叠GaN层12、掺杂Si的n型GaN层14、InGaN发光层16、AlGaN层18、p型GaN层20,接触p型GaN层20形成p电极22,接触n型GaN层14形成n电极24.
图1所示的LED通过以下工艺过程制作.即,首先,利用MOCVD装置在氢气环境中以1100℃对蓝宝石c面基板进行10分钟热处理.然后,使温度降至500℃,供给100秒钟的硅烷气体和氨气,在基板10上形成不连续的SiN膜.此外,该工艺过程是用来减小设备中的位错密度,图中省略了SiN膜的表示.其次,以相同温度供给三甲基镓和氨气,使GaN层成长至20nm厚度.将温度升至1050℃,再次供给三甲基镓和氨气,使无掺杂GaN(u-GaN)层12和掺杂Si的n型GaN层14分别成长为2μm厚度.然后,使温度降至700℃左右,使InGaN发光层16成长为2nm厚度.目标组分是x=0.15,即In0.150.85N。发光层16成长后,将温度升至1000℃,使AlGaN空穴注入层18成长,进而使p型GaN层20成长.
在使p型GaN层20成长后,从MOCVD装置中取出晶片,利用真空蒸镀在成长层表面依次形成10nm厚的Ni和10nm厚的Au.在含有5%的氧的氮气环境中,通过520℃热处理,使金属膜成为p型透明电极22.形成透明电极后,全面涂敷光致抗蚀剂,以光致抗蚀剂作为掩模,进行用于形成n型电极的刻蚀.刻蚀深度为例如600nm左右.在经刻蚀而露出的n型GaN层14上,形成5nm厚的Ti和5nm厚的Al,在氮气环境中以450℃进行30分钟热处理,形成n型电极24.最后,研磨基板10的背面至100μm,将芯片切出,通过安装获得LED1.
图1中,在基板10上形成1个GaN系LED1,但在本实施方式中,在基板10上以二维阵列状单片式(monolithic)形成多个LED1,连接各个LED从而构成发光装置(芯片).这里,所谓的“单片”是指在1个基板上形成了全部元件.
图2表示了发光装置的等效电路图.在图2中,2维阵列状形成的发光元件群分成数量相同(图中是4个)的2组,各组的LED1分别串联连接,2组LED列并联连接以使对于电极(驱动电极)极性相反.依照此种LED列串联连接方式,能够以各个驱动电压相加的高电压来驱动LED1.另外,由于各LED列并联连接到电极以使其极性相互相反,所以即使在使用交流电源作为电源的情况下,因为在电源的各个周期中必定有某一方的LED列发光,所以能够实现高效发光.
图3中表示了基板10上以单片式形成的多个LED的部分平面图.另外,图4表示图3的IV-IV剖视图.在图3中,在LED1上面如图1所示形成有p电极22和n电极24.邻接的LED1的p电极22和n电极24之间,通过架空桥式布线28相连,多个LED1串联连接.
在图4中,为方便说明,简化表示了各个LED1.即,仅示出了n-GaN层14、p-GaN层20、p-电极22、n-电极24.实际上如图1所示,还有InGaN发光层16等.架空桥式布线28经由空中从p电极22连接到n电极24.由此,与在元件表面涂敷绝缘膜,再在其上形成电极并电连接p电极22和n电极24的方法相比,因为无需沿着刻蚀沟配置电极,所以可以避免布线断线以及构成绝缘材料的元素从绝缘膜热扩散到n层、p层导致LED1变坏的问题.架空桥式布线28不仅在LED1之间,也可以用于LED1与图中未示出的电极之间的连接.
另外,如图4所示,各LED1需要相互独立,电绝缘.因此,各LED1在蓝宝石基板10上被分离开来.因为蓝宝石自身是绝缘体,所以能够使LED1分别电分离.依照此种方式,通过用蓝宝石基板10作为进行LED的电分离的电阻体,就能够简单可靠地实现LED的电分离.
此外,作为发光元件,除了具有pn结的LED之外,也可以使用MIS.
图5表示了发光装置的另一等效电路图.在图中,20个LED1串联连接形成1个LED阵列,2个LED阵列(共计40个LED)并联连接到电源.LED1的驱动电压设定为5V,各LED阵列的驱动电压为100V.2个LED阵列与图2同样并联连接到电源以使极性互相相反,使得无论电源极性如何,均有一个LED阵列发光.
图6中具体表示了二维阵列.是对应于图2的等效电路图.在图中,蓝宝石基板10上形成了共计40个LED1,分为分别为20个的2组,通过架空桥式布线28串联连接,形成2个LED阵列.更详细来说,各LED1均为形状相同的正方形大小相等,1个LED阵列从上面起分别以6个、7个、7个配置于一直线上,从上数第1列(6个)和第2列(7个)成相反方向,第2列和第3列也成相反方向.第1列和第2列、第2列和第3列相互分离配置.即,这是因为如后所述,另一LED阵列的列交替插入.第1列右端的LED1和第2列右端的LED1通过架空桥式布线28相连.第2列左端的LED1和第3列左端的LED1也通过架空桥式布线28相连,呈曲折排列.第1列左端的LED1通过架空桥式布线28连接到形成在基板10的左上部的电极(焊盘)32,第3列右端的LED1通过架空桥式布线28连接到形成在基板10的右下部的电极(焊盘)32.2个电极(焊盘)32也是与LED1相同形状的正方形.另一LED阵列形成为与上述一个LED阵列的间隙互不相同.即,另一LED阵列从上面起分别以7个、7个、6个配置于一直线上,从上数第1列形成于一个LED阵列的第1列和第2列之间,第2列形成于一个LED阵列的第2列和第3列之间,第3列形成于一个LED阵列的第3列的下方.另一LED阵列的第1列和第2列,以及第2列和第3列也形成为互反方向,第1列右端的LED1和第2列右端的LED1通过架空桥式布线28相连,第2列左端的LED1和第3列左端的LED1也通过架空桥式布线28相连为曲折状.另一LED阵列的第1列左端的LED通过架空桥式布线28连接到形成在基板10的左上部的电极32,第3列右端的LED1通过架空桥式布线28连接到形成在基板10的右下部的电极32.一个LED阵列与另一LED阵列对于电极32的极性相反.发光装置(芯片)的整体形状为长方形.被提供有电源的2个电极32位于长方形的对角位置而分开形成,此点应予注意.
图7中表示了图6的电路图.很明显,各个LED阵列弯曲为曲折状串联连接,2个LED阵列中呈曲折状的各列形成于相互各行之间.利用这种配置,可以将多个LED1配置在较小基板10上.另外,对于40个LED1,电极32有2个即可,因此这一点也可以提高基板10的使用效率.另外,为了隔离各个LED1而分别形成各个LED1时,需要切割晶片使其分离,对此,本实施方式中,由于可以通过刻蚀来分离各个LED1,所以能够使LED1的间隔变窄.由此,能够使蓝宝石基板10变得更小。各个LED1彼此的分离是通过同时使用光致抗蚀剂或反应性离子刻蚀、湿式刻蚀,刻蚀去除LED1之外的区域直至达到基板10而实现的.由于各LED阵列交替发光,所以能够提高发光效率并提高散热特性.另外,如果改变串联连接的LED1的数量,也可以改变整体的驱动电压.另外,如果减小LED1的面积,就能够提高每个LED的驱动电压.在串联连接20个LED1时,如果用商用电源(100V、60Hz)驱动,就能够获得大约150mW的发光输出.这种情况下的驱动电流为20mA左右.
此外,由图7可知,在将2个LED阵列交替排列为曲折状时,必定会与架空桥式布线28产生交叉部分34.例如,连接另一LED阵列的第1列和第2列时,会与用于连接一个LED阵列的第1列和第2列的布线部分交叉.但是,本实施方式的架空桥式布线28不像上述那样与基板10接触,而是离开基板10从空中通过,所以能够很容易地避免架空桥式布线28之间在交叉部分34接触造成短路.这是使用架空桥式布线28的优点之一。架空桥式布线28例如以如下方式形成.即,全面涂敷2μm厚的光致抗蚀剂,在打开架空桥式布线形状的空洞后,进行坚膜处理(post bake).利用真空蒸镀在其上依次蒸镀10nm的Ti、10nm的Au.再在其上再次全面涂敷2μm厚的光致抗蚀剂,只在欲形成架空桥式布线的部分开孔.接着,以Ti和Au作为电极,在电解液中利用离子电镀法(电镀)在电极全面上附着3~5μm厚的Au.然后,将试料浸入丙酮,利用超声波洗净将光致抗蚀剂溶解去除,形成架空桥式布线28.
依照此种方式,通过将多个LED1配置为二维阵列状,可以有效活用基板面积,并能够以高驱动电压,特别是商用电源进行驱动,二维阵列的模式也可以使用其他各种模式.一般地,二维阵列模式最好具备以下条件.
(1)为了使各LED中电流一律相同从而获得一律相同的发光,各个LED的形状、电极位置最好是相同的.
(2)为了将晶片切割为芯片,各个LED的边最好是直线.
(3)为了提高光提取效率,使用标准的安装,利用来自周边的反射;为此,LED的平面形状最好是近似于正方形的形状.
(4)2个电极(焊接区)的大小最好是100μm见方左右,并相互分离.
(5)为了有效利用晶片面积,最好使布线、焊盘占小的比例.
当然,这些不是必须的,例如各个LED的形状也可以使用三角形的平面形状.即使各个LED的形状为三角形,通过将其组合,整体形状也可以呈近似正方形.下面说明二维阵列模式的若干实例.
图8中表示了将共计6个LED1二维配置的实例,图9表示了其电路图.图8的配置基本上与图6的配置相同,共计6个LED阵列等分为2组,分别由串联连接的3个LED构成.一个LED阵列配置为曲折状,从上数第1列形成1个LED1,第2列形成2个LED1.第1列LED和第2列的右端的LED1通过架空桥式布线28串联连接,第2列的2个LED1也通过架空桥式布线28串联连接.基板10的左上部和左下部形成有电极(焊盘)32,第1列的LED1通过架空桥式布线连接到左上部的电极32,第2列左端的LED1连接到左下部的电极32.另一个LED阵列也排列为曲折状,从上数第1列形成2个LED1,第2列形成1个LED1.另一个LED阵列的第1列形成于上述一个LED阵列的第1列和第2列之间,另一个LED阵列的第2列形成于上述一个LED阵列的第2列的下方.第1列右端的LED1通过架空桥式布线28串联连接到第2列的LED1,第1列的2个LED1彼此也通过架空桥式布线28串联连接.第1列左端的LED1通过架空桥式布线28连接到左上部的电极32,第2列的LED1通过架空桥式布线28连接到左下部的电极32.由图9可知,在此实例中也是2个LED阵列相互并联连接到电极32,并且连接成极性相反.因此,当供给交流电源时,2个LED阵列交替发光.
图10中表示了将共计14个LED二维配置的实例,图11表示了其电路图.共计14个LED阵列分为2组,分别由串联连接的7个LED构成.一个LED阵列配置为曲折状,从上数第1列形成3个LED1,第2列形成4个LED1.第1列左端的LED和第2列左端的LED1通过架空桥式布线28串联连接,第1列的3个LED1彼此以及第2列的4个LED1彼此也通过架空桥式布线28串联连接.基板10的右上部和右下部形成有电极(焊盘)32,第1列右端的LED1通过架空桥式布线连接到右上部的电极32,第2列右端的LED1连接到右下部的电极32.另一个LED阵列也排列为曲折状,从上数第1列形成4个LED1,第2列形成3个LED1.另一个LED阵列的第1列形成于上述一个LED阵列的第1列和第2列之间,另一个LED阵列的第2列形成于上述一个LED阵列的第2列的下方.第1列左端的LED1通过架空桥式布线28串联连接到第2列左端的LED1.第1列的4个LED1彼此以及第2列的3个LED1彼此也串联连接.第1列右端的LED1通过架空桥式布线28连接到右上部的电极32,第2列右端的LED1通过架空桥式布线28连接到右下部的电极32.由图11可知,在此实例中也是2个LED阵列相互并联连接到电极32,并且连接成极性相反.因此,当供给交流电源时,2个LED阵列交替发光.
图6、图8、图10的二维模式的共同特点是,各个LED1具有近似正方形的相同形状、相同大小;2个电极(焊盘)也是近似正方形,不形成邻接(形成分离);2个LED阵列形成组合;2个LED阵列形成弯曲并且在芯片上互相交错;2个LED阵列连接到电极以形成相反极性等等.
图12中表示了将平面形状为三角形的LED二维排列时的实例,图13表示了其电路图.在图12中,LED1a、1b、1c、1d、1e、1f共计6个形成为三角形平面形状.LED1a与LED1e配置成在三角形的一边互相面对且2者成近似正方形;LED1b与1f配置成互相面对且2者形成近似正方形.另外,LED1d与电极32互相面对连接,LED1c与电极32互相面对连接.2个电极32也与LED同样呈三角形平面形状,同样配置为近似正方形.LED彼此面对的边构成n电极24,即,相对的2个LED共享n电极24.LED与电极32也是n电极连接.该配置也如上述实例同样地将共计6个LED分为2组.一个LED阵列由LED1a、LED1b、LED1c构成,LED1a的p电极22通过架空桥式布线28连接到电极32,其n电极24通过架空桥式布线28与LED1b的p电极22连接.LED1b的n电极24通过架空桥式布线28与LED1c的p电极22连接.LED1c的n电极24连接到电极32.另一个LED阵列由LED1d、LED1e、LED1f构成,电极32与LED1f的p电极22通过架空桥式布线28相连,LED1f的n电极24与LED1e的p电极22通过架空桥式布线28相连,LED1e的n电极24与LED1d的p电极22通过架空桥式布线28相连,LED1d的n电极24连接到电极32.
在图13中,构成一个LED阵列的LED1a与构成另一个LED阵列的LED1e的n电极相连,构成一个LED阵列的LED1b与构成另一个LED阵列的LED1f的n电极相连,这一点也请注意.通过共享2组LED阵列的若干个n电极,能够减少电路布线.另外,在该实例中,也是将2个LED阵列并联连接到电极32,并且连接成极性相反.另外,各个LED形状、大小相同,将各个LED以一边相对置,同时使电极32为三角形,就能够以高密度形成LED和电极,减小所需要的基板面积.
图14中表示了将平面形状为三角形的LED二维排列的另一实例,图15表示了其电路图.在该实例中,将LED1a~1r共计16个形成为二维.LED1a与1j、1b和1k、1c和1m、1d和1n、1e和1p、1f和1q、1g和1r分别在三角形的一边上相互面对.相对的边上共同形成有n电极24.另外,LED1i与电极32相互面对,LED1h与电极32相互面对.一方的LED阵列由LED1a、1b、1c、1d、1e、1f、1g、1h构成,另一方的LED阵列由LED1r、1q、1p、1n、1m、1k、1j、1i构成.LED1b的n电极24通过架空桥式布线28与LED1c的p电极22相连,LED1e的n电极24也通过架空桥式布线28与LED1f的p电极22相连.另外,LED1q的n电极24也通过架空桥式布线28与LED1p的p电极22相连,LED1m的n电极24也通过架空桥式布线28与LED1k的p电极22相连.在图14中也会产生与图12同样的交叉部分,但能够通过架空桥式布线28避免短路.另外,在本实例中,也是通过共享2组LED阵列的若干个n电极24的结构来减少所需的布线.另外,在该实例中也是2个LED阵列并联,以互相相反极性连接到电极32,交流驱动成为可能.在图12中表示了共计6个LED的情况,在图14中表示了共计16个LED的情况,其他个数的LED也可以进行同样的二位排列.本申请的申请人制作出了将38个LED二维排列的发光装置.
以上说明了交流驱动的情况,当然也可以是直流驱动.在这种情况下,LED阵列不是以相反极性连接到电极,而是可以按照直流电源的极性方向,顺向连接LED阵列.通过串联连接多个LED,能够以高电压驱动.以下说明直流驱动的情况.
图16中表示了将2个LED串联连接的实例,图17表示了其电路图.各个LED1的平面形状为矩形,2个LED之间通过架空桥式布线28相连.电极32形成于各个LED1的附近,利用电极32和LED1形成长方形的区域.即,电极32占用长方形区域的一部分,在长方形区域的其他区域中形成LED1.
图18中表示了将共计4个LED二维排列的实例,图19表示了其电路图.将图16的LED1分割为2个,将各个并联连接.由2个LED构成的LED阵列可以2组并联地顺向连接.用LED1a与1b构成1个LED阵列,用LED1c和1d构成另一个LED阵列.LED1a和LED1c共享p电极22和n电极24,LED1b和LED1d共享p电极22和n电极24.利用这种结构,与图16相比,具有使电流均匀的效果.
图20表示了将共计3个LED二维排列的实例,图21表示了其电路图.LED1a、1b、1c形状不同,在LED1a的一部分形成有电极32.LED1a的n电极24与LED1b的p电极通过跨在LED1b之上的架空桥式布线28相连.通过对各LED的形状和配置进行规划,即使是3个LED也可以使发光装置(芯片)整体的外观形状呈近似正方形.
图22中表示了将共计6个LED二维排列的实例,图23表示了其电路图.各个LED1a~1f形状、大小相同.LED1a~1f串联连接.LED1a~1c配置于直线上,LED1d~1f配置于另一直线上.LED1c与LED1d通过架空桥式布线28相连.在该实例中,也可以使芯片的整体形状呈近似正方形.
图24中表示了将共计5个LED二维排列的实例,图25表示了其电路图.LED1a~1e形状(长方形)、大小相同.在该实例中,也可以使整体形状呈近似正方形.
以上说明了本发明的实施方式,本发明并不限定于此,而是可以进行各种变化.特别是在将多个发光元件(LED等)二维配置时,模式可以是上述模式之外.在此情况下,适合于使邻接发光元件之间共享电极从而减少布线、将整体形状取为正方形或长方形、将多组发光元件阵列并联连接到电极、交流驱动时多组发光元件阵列置为互相相反极性、将多组发光元件阵列分别以曲折状组合,等等.
图26~图31中,表示了这些变形例的若干个实例.图26是交流驱动时的二维配置,配置有共计40个LED.图27是其电路图.与图6不同的是,2组LED阵列的若干个共享n电极24(参照图5).例如,位于一个LED阵列第1列的从右端数第2位置处的LED(图中以α表示)的n电极24,与位于另一个LED阵列第1列的右端的LED(图中以β表示)的n电极24是共享的.此外,LED阵列的端部(图中γ部分)的架空桥式布线28不交叉,而是共同形成的.
图28是交流驱动时的二维配置,配置有共计14个LED.图29是其电路图.与图10不同的是,2组LED阵列的若干个共享n电极24.例如,位于一个LED阵列第1列的左端的LED(图中以α表示)的n电极24,与位于另一个LED阵列第1列的从右端数第2位置处的LED(图中以β表示)的n电极24是共享的.另外,端部(图中γ部分)的架空桥式布线28共同形成.
图30是交流驱动时的二维配置,配置有共计6个LED.图31是其电路图.在该实例中,端部(γ部)的架空桥式布线28也是共同形成的.该结构也可以使一个LED阵列的n电极24与另一个LED阵列的n电极24共享.

Claims (5)

1. 一种发光装置,在绝缘基板上形成多个GaN系发光二级管元件,其特征在于,
具有2个交流电源用电极,
上述多个发光二级管元件在上述绝缘基板上呈二维配置,
上述多个发光二级管元件分为数量相同的第1组和第2组,第1组和第2组分别互不相同地配置成曲折状,位于第1组的一端部的发光二极管元件以及位于第2组的另一端部的发光二极管元件与上述2个交流电源用电极中的一个电极相连接,位于第1组的另一端部的发光二极管元件以及位于第2组的一端部的发光二极管元件与上述2个交流电源用电极中的另一电极相连接,从而第1组和第2组并联连接以使上述2个交流电源用电极相互为极性相反,
构成所述第1组的发光二级管元件中的、至少除位于端部的发光二级管元件以外的任意一个发光二级管元件的负极,与构成所述第2组的发光二级管元件中的、与所述任意一个发光二级管元件邻接的发光二级管元件的负极共同地电性连接。
2. 如权利要求1所述的装置,其特征在于,上述发光元件及电极的平面形状为近似正方形。
3. 如权利要求1所述的装置,其特征在于,上述发光元件及电极的平面形状为三角形。
4. 如权利要求1所述的装置,其特征在于,上述电极为交流电源用电极。
5. 如权利要求1所述的装置,其特征在于,上述第1组和第2组具有共同的n电极。
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