CN100428406C - Processing method for the semiconductor pipe core assembly crystal surface - Google Patents
Processing method for the semiconductor pipe core assembly crystal surface Download PDFInfo
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- CN100428406C CN100428406C CNB2007100204371A CN200710020437A CN100428406C CN 100428406 C CN100428406 C CN 100428406C CN B2007100204371 A CNB2007100204371 A CN B2007100204371A CN 200710020437 A CN200710020437 A CN 200710020437A CN 100428406 C CN100428406 C CN 100428406C
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- core assembly
- pipe core
- semiconductor pipe
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Abstract
The related process method for grain surface in semiconductor die assembly comprises: inserting the target assembly into the cleaning tank, pouring corrosive agent into tank to remove the organic sewage on objective surface in 1-10min; inclining the tank to pour out the agent and fast clean the objective with deionized water; in turn, pouring the first cleaning agent into the tank to remove the metal ion and organic and form oxidation layer in 1-5min, then pouring out the agent and cleaning fast with deionized water; pouring the second cleaning agent in tank to remove heavy metal ion and organic in 1-5min, then pouring out the agent and cleaning fast with deionized water; finally, using ultrasonic wave to clean and dry the objective. This invention is low cost and benefit to improve semidiode performance.
Description
Technical field
The present invention relates to a kind of processing method of semiconductor diode, especially relate to a kind of processing method of semiconductor pipe core assembly crystal surface.
Background technology
Semiconductor diode is as the little resolution element of volume, has multiple function such as rectification, detection, amplitude limit and protection and is widely used in the various circuit.Conventional semiconductor diode is earlier crystal bar to be cut into wafer, again wafer is cut into crystal grain, the both ends of the surface of crystal grain are made semiconductor pipe core assembly with the copper wire bonds respectively by tin solder, through pickling, gluing, injection moulding, electroplate, draw straight, lettering, test and packing, finish the making of semiconductor diode.In the manufacturing process of semiconductor diode, whether semiconductor pipe core assembly cleans clean, directly influences the performance of semiconductor diode.Conventional cleaning is that crystal grain is carried out after pickling processes, again with wire bonds.In the welding process, heavy metal ion and other particulate dirts such as tin, copper, silver can be adsorbed again in the semiconductor pipe core assembly surface, and these metal ions and dirt can cause the P-N electric leakage, cause the short circuit of circuit structure, reduce the job stability of semiconductor diode, so need further clean is carried out on the semiconductor pipe core assembly surface, to obtain clean surface.This cleaning method has not only increased the manufacturing cost of semiconductor diode, and is difficult for removing fully the heavy metal ion on semiconductor pipe core assembly surface.Conventional cleaning method is to adopt the multistep ablution, at first is that SPM cleans, and promptly uses sulfuric acid/mixed solution of hydrogen peroxide of 4: 1 to clean, and removes organic substance; Clean with SC-1 again, promptly use the mixed solution of ammoniacal liquor/hydrogen peroxide/deionized water of 1: 1: 5 to clean, remove the organic compound and the particulate of silicon wafer surface; Clean with SC-2 again, promptly use hydrochloric acid/hydrogen peroxide/deionized water mixed solution of 1: 1: 6 to clean, remove metal ion; Clean with DHF at last, promptly use the mixed solution of hydrofluoric acid/deionized water of 1: 99 to clean, remove the oxide layer that silicon wafer surface generates naturally, semiconductor pipe core assembly is repeatedly cleaned in different rinse baths, be attached to grain surface foreign ion and organic pollution to remove, and this cleaning is to carry out pickling processes at silicon wafer.When pickling processes for the semiconductor pipe core assembly surface after the welding, in crystal grain and pin welding process, can adsorb a large amount of heavy metal ion at the grain surface of semiconductor pipe core assembly, therefore this cleaning method and cleaning agent are the heavy metal ion that can't remove clean semiconductor pipe core assembly crystal surface with simple method and low cost.And semiconductor diode when work temperature influence is bigger, adopt its reverse current of the made semiconductor diode of present cleaning method IR can only be controlled at about 5 μ A, the reverse cutoff performance instability of semiconductor diode, easily be reversed voltage breakdown, the quality of semiconductor diode loses the unilateal conduction effect, so can't be further enhanced.Therefore in addition, adopt present cleaning method, semiconductor pipe core assembly adopts different rinse baths at different wash phases, needs load and unload semiconductor pipe core assembly by the mechanism of special use, not only operates loaded down with trivial detailsly, but also has increased auxiliary time of production.
Summary of the invention
The purpose of this invention is to provide a kind ofly, under the prerequisite, can improve the processing method of the semiconductor pipe core assembly crystal surface of diode behavior cheaply easy to operate.
The present invention is that the technical scheme that achieves the above object is: a kind of processing method of semiconductor pipe core assembly crystal surface is characterized in that:
(1), semiconductor pipe core assembly to be cleaned is plugged in the rinse bath, corrosive agent is poured in the rinse bath, to corroding and remove organic dirt in the semiconductor pipe core assembly surface, time is controlled in 1～10min, tilting rinse bath falls to remove corrosive agent, washes the semiconductor pipe core assembly surface with the quick oblique impact of high pressure de-ionized water; (2), preceding cleaning agent is poured in the rinse bath, remove the metal ion and the organic substance on semiconductor pipe core assembly surface, and at semiconductor pipe core assembly crystal surface formation oxide protective layer, temperature is controlled at 75 ± 5 ℃, clear Xian is controlled at 1～5min the time, fall to remove preceding cleaning agent, wash the semiconductor pipe core assembly surface with the quick oblique impact of high pressure de-ionized water; (3), again the back cleaning agent is put upside down in the rinse bath, removed the heavy metal ion and the organic substance on semiconductor pipe core assembly surface, the time is controlled at 1～5min, and cleaning agent after falling to remove is washed the semiconductor pipe core assembly surface with the quick oblique impact of high pressure de-ionized water; (4), rinse bath is placed in the rinsing bowl, use ultrasonic waves for cleaning, after the dehydration semiconductor pipe core assembly is placed on purity and is and be heated to 120～150 ℃ under 99.999% the nitrogen atmosphere and carry out drying;
Percentage by volume, above-mentioned corrosive agent are nitric acid, 20%～30% hydrofluoric acid, 8%～15% sulfuric acid and 30%～40% the glacial acetic acid mixed solutions of AG or top grade pure 20%～30%,
The phosphoric acid that preceding cleaning agent is AG or a top grade pure 15%～35%, 15%～35% hydrogen peroxide and 40%～60% deionized water mixed solution,
Back cleaning agent is the ammoniacal liquor of AG or top grade pure 35%～55%, 5%～20% hydrogen peroxide, 40%～55% deionized water mixed solution.
The mixed acid of the present invention's nitric acid, hydrofluoric acid, sulfuric acid and glacial acetic acid is as corrosive agent, corroding at first to the semiconductor pipe core assembly surface, grain surface is added the mechanical damage that stays man-hour to be revised, make semiconductor pipe core assembly crystal grain than being easier to and the economic edge that obtains slyness, to eliminate point discharge, improve electrical property, also remove the organic substance and the metal ion of semiconductor pipe core assembly surface attachment simultaneously by this corrosive agent.The present invention uses by phosphoric acid again; the preceding cleaning fluid that hydrogen peroxide and deionized water constitute cleans semiconductor pipe core assembly; at the metal ion of further removing the semiconductor pipe core assembly surface simultaneously; silicon interface at semiconductor pipe core assembly generates one deck oxide protective layer immediately; the metal ion protected seam of grain surface is isolated; promptly and again after the back clear agent by alkalescence; the metal ion that protective layer is outer; especially heavy metal ion is removed; can one the step to removing attached to the organic substance on semiconductor pipe core assembly surface; and carry out neutralization of acid with base, better clean the particulate dirt and the metal ion of grain surface.The present invention is owing to adopt white picking and the alkaline cleaning in road, back; and in cleaning process, need not to move semiconductor pipe core assembly; can reduce the pollution on the cleaning process; back cleaning agent by high mixture ratio concentration; further clean the outer heavy metal ion of semiconductor pipe core assembly crystal grain protective layer; improved the stability that semiconductor diode oppositely ends, can obtain high-quality semiconductor diode, the reverse current IR of semiconductor diode can be controlled at below the 0.05 μ A.In the cleaning process of the present invention, adopt a rinse bath repeatedly to clean, easy to operate, pollute and lack, the cleaning efficiency height.
Embodiment
Embodiment 1
The processing method of semiconductor pipe core assembly crystal surface of the present invention, (1), semiconductor pipe core assembly to be cleaned is inserted in the rinse bath, corrosive agent is poured in the rinse bath, this corrosive agent is nitric acid, 20%～30% hydrofluoric acid, 8%～15% sulfuric acid and 30%～40% the glacial acetic acid mixed solution of AG or top grade pure 20%～30%, time is controlled at 1～10min, rinse bath tilts to fall to remove corrosive agent, spray the semiconductor pipe core assembly surface with high pressure de-ionized water, oblique impact is washed the semiconductor pipe core assembly surface fast.(2); rinse bath enters next station; and reset preceding cleaning agent is poured in the rinse bath; should preceding cleaning agent be the phosphoric acid of AG or top grade pure 15%～35%; 15%～35% hydrogen peroxide and 40%～60% deionized water mixed solution; in metal ion and organic matter removal to the semiconductor pipe core assembly surface; form inclined to one side phosphorus silicon oxide layer as oxide protective layer at semiconductor pipe core assembly crystal surface; temperature is controlled at 75 ± 5 ℃; time is controlled at 1～5min; rinse bath is tilted; fall to remove preceding cleaning agent; spray the semiconductor pipe core assembly surface with high pressure de-ionized water, oblique impact is washed the semiconductor pipe core assembly surface fast.(3), rinse bath enters a back station, after resetting the back cleaning agent is poured in the rinse bath, this back cleaning agent is the ammoniacal liquor of AG or top grade pure 35%～55%, 5%～20% hydrogen peroxide, 40%～55% deionized water mixed solution, by the metal ion of high concentration basic liquid to the semiconductor pipe core assembly surface, especially removal of heavy metal ions, and continue the organic substance on semiconductor pipe core assembly surface is removed, time is controlled at 1～5min, rinse bath tilts to fall to remove the back cleaning agent, spray the semiconductor pipe core assembly surface with high pressure de-ionized water, oblique impact is washed the semiconductor pipe core assembly surface fast.(4), rinse bath is placed in the rinsing bowl, by ultrasonic oscillator semiconductor pipe core assembly is cleaned, use isopropanol dehydration, it is to be heated to 120～150 ℃ under 99.999% the nitrogen atmosphere to carry out drying that semiconductor pipe core assembly is placed on purity.In the above-mentioned operating process, rinse bath is a surrounding projection and to the groove of bottom surface rounding off, 45 °～70 ° of rinse bath tiltables.
Embodiment 2
The processing method of semiconductor pipe core assembly crystal surface of the present invention, (1), semiconductor pipe core assembly to be cleaned is inserted in the rinse bath, corrosive agent is poured in the rinse bath, this corrosive agent is nitric acid, 23%～28% hydrofluoric acid, 10%～12% sulfuric acid and 32%～38% the glacial acetic acid mixed solution of AG or top grade pure 23%～28%, time is controlled at 5～10min, rinse bath tilts to fall to remove corrosive agent, spray the semiconductor pipe core assembly surface with high pressure de-ionized water, oblique impact is washed the semiconductor pipe core assembly surface fast.(2); rinse bath enters next station; and reset preceding cleaning agent is poured in the rinse bath; should preceding cleaning agent be the phosphoric acid of AG or top grade pure 20%～30%; 20%～30% hydrogen peroxide and 40%～50% deionized water mixed solution; in metal ion and organic matter removal to the semiconductor pipe core assembly surface; form inclined to one side phosphorus silicon oxide layer as oxide protective layer at semiconductor pipe core assembly crystal surface; temperature is controlled at 75 ± 5 ℃; time is controlled at 3～5min; rinse bath is tilted; fall to remove preceding cleaning agent; spray the semiconductor pipe core assembly surface with high pressure de-ionized water, oblique impact is washed the semiconductor pipe core assembly surface fast.(3), rinse bath enters a back station, after resetting the back cleaning agent is poured in the rinse bath, the ammoniacal liquor of this back cleaning agent 35%～45%, 5%～15% hydrogen peroxide and 40%～50% deionized water mixed solution, by the metal ion of high concentration basic cleaning fluid to the semiconductor pipe core assembly surface, especially removal of heavy metal ions, and continue the organic substance on semiconductor pipe core assembly surface is removed, time is controlled at 3～5min, rinse bath tilts to fall to remove the back cleaning agent, spray the semiconductor pipe core assembly surface with high pressure de-ionized water, oblique impact is washed the semiconductor pipe core assembly surface fast.(4), rinse bath is placed in the rinsing bowl, by ultrasonic oscillator semiconductor pipe core assembly is cleaned, use isopropanol dehydration, it is to be heated to 120～150 ℃ under 99.999% the nitrogen atmosphere to carry out drying that semiconductor pipe core assembly is placed on purity.
Embodiment 3
The processing method of semiconductor pipe core assembly crystal surface of the present invention, (1), semiconductor pipe core assembly to be cleaned is inserted in the rinse bath, corrosive agent is poured in the rinse bath, this corrosive agent is nitric acid, 20%～25% hydrofluoric acid, 10%～15% sulfuric acid and 35%～40% the glacial acetic acid mixed solution of AG or top grade pure 20%～25%, time is controlled at 3～8min, rinse bath tilts to fall to remove corrosive agent, spray the semiconductor pipe core assembly surface with high pressure de-ionized water, oblique impact is washed the semiconductor pipe core assembly surface fast.(2); rinse bath enters next station; and reset preceding cleaning agent is poured in the rinse bath; should preceding cleaning agent be the phosphoric acid of AG or top grade pure 20%～30%; 20%～30% hydrogen peroxide and 40%～60% deionized water mixed solution; in metal ion and organic matter removal to the semiconductor pipe core assembly surface; form inclined to one side phosphorus silicon oxide layer as oxide protective layer at semiconductor pipe core assembly crystal surface; temperature is controlled at 75 ± 5 ℃; time is controlled at 2～5min; rinse bath is tilted; fall to remove preceding cleaning agent; spray the semiconductor pipe core assembly surface with high pressure de-ionized water, oblique impact is washed the semiconductor pipe core assembly surface fast.(3), rinse bath enters a back station, after resetting the back cleaning agent is poured in the rinse bath, this back cleaning agent is by the ammoniacal liquor of AG or top grade pure 35%～45%, 5%～15% hydrogen peroxide and 40%～50% deionized water mixed solution, by the metal ion of high concentration basic cleaning fluid to the semiconductor pipe core assembly surface, especially removal of heavy metal ions, and continue the organic substance on semiconductor pipe core assembly surface is removed, time is controlled at 3～5min, rinse bath tilts to fall to remove the back cleaning agent, spray the semiconductor pipe core assembly surface with high pressure de-ionized water, oblique impact is washed the semiconductor pipe core assembly surface fast.(4), rinse bath is placed in the rinsing bowl, by ultrasonic oscillator semiconductor pipe core assembly is cleaned, use isopropanol dehydration, it is to be heated to 120～150 ℃ under 99.999% the nitrogen atmosphere to carry out drying that semiconductor pipe core assembly is placed on purity.
Claims (5)
1, a kind of processing method of semiconductor pipe core assembly crystal surface is characterized in that:
(1), semiconductor pipe core assembly to be cleaned is plugged in the rinse bath, corrosive agent is poured in the rinse bath, to corroding and remove organic dirt in the semiconductor pipe core assembly surface, time is controlled in 1～10min, tilting rinse bath falls to remove corrosive agent, washes the semiconductor pipe core assembly surface with the quick oblique impact of high pressure de-ionized water; (2), preceding cleaning agent is poured in the rinse bath, remove the metal ion and the organic substance on semiconductor pipe core assembly surface, and at semiconductor pipe core assembly crystal surface formation oxide protective layer, temperature is controlled at 75 ± 5 ℃, clear Xian is controlled at 1～5min the time, fall to remove preceding cleaning agent, wash the semiconductor pipe core assembly surface with the quick oblique impact of high pressure de-ionized water; (3), again the back cleaning agent is put upside down in the rinse bath, removed the heavy metal ion and the organic substance on semiconductor pipe core assembly surface, the time is controlled at 1～5min, and cleaning agent after falling to remove is washed the semiconductor pipe core assembly surface with the quick oblique impact of high pressure de-ionized water; (4), rinse bath is placed in the rinsing bowl, use ultrasonic waves for cleaning, after the dehydration semiconductor pipe core assembly is placed on purity and is and be heated to 120～150 ℃ under 99.999% the nitrogen atmosphere and carry out drying;
Percentage by volume, above-mentioned corrosive agent is nitric acid, 20%～30% hydrofluoric acid, 8%～15% sulfuric acid and 30%～40% the glacial acetic acid mixed solution of AG or top grade pure 20%～30%, the phosphoric acid that preceding cleaning agent is AG or a top grade pure 15%～35%, 15%～35% hydrogen peroxide and 40%～60% deionized water mixed solution
Back cleaning agent is the ammoniacal liquor of AG or top grade pure 35%～55%, 5%～20% hydrogen peroxide, 40%～55% deionized water mixed solution.
2, the processing method of semiconductor pipe core assembly crystal surface according to claim 1 is characterized in that: described rinse bath is a surrounding projection and to the groove of bottom surface rounding off, 45 °～70 ° of rinse bath tiltables.
3, the processing method of semiconductor pipe core assembly crystal surface according to claim 1 is characterized in that: described corrosive agent is 23%～28% nitric acid, 23%～28% hydrofluoric acid, 10%～12% sulfuric acid and 32%～38% glacial acetic acid mixed solution.
4, the processing method of semiconductor pipe core assembly crystal surface according to claim 1 is characterized in that: cleaning agent is 20%～30% phosphoric acid, 20%～30% hydrogen peroxide and 40%～50% deionized water mixed solution before described.
5, the processing method of semiconductor pipe core assembly crystal surface according to claim 1 is characterized in that: described back cleaning agent is 35%～45% ammoniacal liquor, 5%～15% hydrogen peroxide and 40%～50% deionized water mixed solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100204371A CN100428406C (en) | 2007-02-27 | 2007-02-27 | Processing method for the semiconductor pipe core assembly crystal surface |
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| CNB2007100204371A CN100428406C (en) | 2007-02-27 | 2007-02-27 | Processing method for the semiconductor pipe core assembly crystal surface |
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| CN101017773A CN101017773A (en) | 2007-08-15 |
| CN100428406C true CN100428406C (en) | 2008-10-22 |
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Cited By (1)
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|---|---|---|---|---|
| CN102140645A (en) * | 2010-12-15 | 2011-08-03 | 无锡中微晶园电子有限公司 | Process for cleaning laser-marked silicon slice |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5505785A (en) * | 1994-07-18 | 1996-04-09 | Ferrell; Gary W. | Method and apparatus for cleaning integrated circuit wafers |
| US5656097A (en) * | 1993-10-20 | 1997-08-12 | Verteq, Inc. | Semiconductor wafer cleaning system |
| US6158447A (en) * | 1997-09-09 | 2000-12-12 | Tokyo Electron Limited | Cleaning method and cleaning equipment |
| US20030139046A1 (en) * | 2001-05-25 | 2003-07-24 | Mitsubishi Denki Kabushiki Kaisha | Method and apparatus for cleaning semiconductor device and method of fabricating semiconductor device |
| CN1795544A (en) * | 2003-05-28 | 2006-06-28 | 株式会社上睦可 | Method of processing silicon wafer |
-
2007
- 2007-02-27 CN CNB2007100204371A patent/CN100428406C/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5656097A (en) * | 1993-10-20 | 1997-08-12 | Verteq, Inc. | Semiconductor wafer cleaning system |
| US5908509A (en) * | 1993-10-20 | 1999-06-01 | Verteq, Inc. | Semiconductor wafer cleaning system |
| US5505785A (en) * | 1994-07-18 | 1996-04-09 | Ferrell; Gary W. | Method and apparatus for cleaning integrated circuit wafers |
| US6158447A (en) * | 1997-09-09 | 2000-12-12 | Tokyo Electron Limited | Cleaning method and cleaning equipment |
| US20030139046A1 (en) * | 2001-05-25 | 2003-07-24 | Mitsubishi Denki Kabushiki Kaisha | Method and apparatus for cleaning semiconductor device and method of fabricating semiconductor device |
| CN1795544A (en) * | 2003-05-28 | 2006-06-28 | 株式会社上睦可 | Method of processing silicon wafer |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102140645A (en) * | 2010-12-15 | 2011-08-03 | 无锡中微晶园电子有限公司 | Process for cleaning laser-marked silicon slice |
| CN102140645B (en) * | 2010-12-15 | 2012-07-11 | 无锡中微晶园电子有限公司 | Process for cleaning laser-marked silicon slice |
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| CN101017773A (en) | 2007-08-15 |
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