CN100433242C - Method for producing low-temperature polycrystalline silicon thin membrane - Google Patents
Method for producing low-temperature polycrystalline silicon thin membrane Download PDFInfo
- Publication number
- CN100433242C CN100433242C CNB2004100849170A CN200410084917A CN100433242C CN 100433242 C CN100433242 C CN 100433242C CN B2004100849170 A CNB2004100849170 A CN B2004100849170A CN 200410084917 A CN200410084917 A CN 200410084917A CN 100433242 C CN100433242 C CN 100433242C
- Authority
- CN
- China
- Prior art keywords
- amorphous silicon
- laser
- silicon membrane
- membrane
- absorption layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The present invention provides a semiconductor element and a method for making a low temperature polycrystalline silicon film. The method comprises: forming an amorphous silicon film on a baseplate, forming an isolation layer and a laser absorption layer on the amorphous silicon film, carrying out photoetching corrosion technology, removing a part of the laser absorption layer and the isolation layer to expose a part of the amorphous silicon film and finally carrying out laser crystallization technology to convert the amorphous silicon film into a polycrystalline silicon film.
Description
Technical field
The present invention relates to a kind of semiconductor element and make a low-temperature polysilicon film (low temperaturepoly-silicon, LTPS) method refers to a kind of semiconductor element of lateral growth (lateral growth) and method of making a low-temperature polysilicon film utilized especially.
Background technology
In the manufacture process of Thin Film Transistor-LCD, because the heat resistance of glass substrate often can only arrive 600 ℃, and the depositing temperature of polysilicon membrane is approximately between 650-575 ℃, if at high temperature directly make the torsional deformation that polysilicon membrane will cause glass substrate, therefore at present the polycrystalline SiTFT LCD gradually adopted amorphous silicon membrane again the method for crystallization make low-temperature polysilicon film.
Existing low-temperature polysilicon film is made on the insulated substrate, and insulated substrate must be made of the material of printing opacity, is generally glass substrate, quartz base plate or plastic base.Existing method is prior to forming an amorphous silicon membrane on the insulated substrate, (excimer laser annealing, ELA) technology make the amorphous silicon membrane crystallization become polysilicon layer then to carry out excimer laser annealing.In the process of quasi-molecule laser annealing, amorphous silicon membrane is via to the absorption of laser deep UV (ultraviolet light) and reach fusion fast and crystallization, form polysilicon membrane, and the fast Absorption that this employing short time pulse laser is caused only can impact the amorphous silicon membrane surface, insulated substrate can't influence insulated substrate, so can remain on the state of low temperature always.
Because the quality quality of amorphous silicon membrane is very big to follow-up formed polycrystalline SiTFT properties influence, therefore each parameter in the amorphous silicon membrane depositing operation needs by strict control, in the hope of forming the amorphous silicon membrane of low hydrogen content, high film thickness uniformity and low surface roughness.In addition, because the polysilicon membrane that the amorphous silicon membrane crystallization forms is used as the semiconductor layer of thin-film transistor, to define zones such as source electrode, drain electrode and raceway groove, therefore the whether good electrical performance for element of quality of polysilicon membrane more has direct influence, and for example the grain size of polysilicon membrane (grain size) is a key factor that influences the polysilicon membrane quality.
In order to increase the size of crystal grain, No. 485496 (corresponding United States Patent (USP) is US 6 at the Taiwan patent announcement, 555,449B 1) a kind of continuously lateral curing of proposition (sequential lateral solidification, SLS) technology, it utilizes photomask shaded portions laser in laser optical system, making not, the portion of amorphous silicon film of irradiating laser keeps solid-state, be subjected to the light-struck portion of amorphous silicon film of laser and then melt and be liquid state, and utilize the temperature gradient in these two zones to make the directive growth of crystal grain.Though can become to grow the crystal grain of going up manyfold than conventional method greatly according to the method, but accurately the crystal grain of control element channel region and number of grain boundaries.For instance, may there be oikocryst circle (grain boundary) in the polysilicon membrane of the subelement channel region of Thin Film Transistor-LCD, the subelement channel region may fall within on the polysilicon membrane of dereliction crystal boundary, therefore causes the very big difference of electrical generation between different elements.For fear of this problem, existing method must be sacrificed the application area of polysilicon membrane, does many cooperation and compromise on the shape of element and angle, improving interelement uniformity, yet the small size development that such practice has but limited element with use.
In addition, the method that a kind of different-thickness design of utilizing amorphous silicon membrane produces temperature gradient is also proposed in No. the 452892nd, Taiwan patent announcement (corresponding United States Patent (USP) is US 6,432,758 B1).It utilizes little shadow and etch process to control the thickness of amorphous silicon membrane, makes amorphous silicon membrane have different thickness in different positions, with the growth direction of control crystal grain.This kind practice can be controlled crystal grain and grows up equably along horizontal direction, yet in the process of etching method for amorphous silicon thin film, the film thickness uniformity of amorphous silicon membrane and surface roughness all may suffer damage, and for the electrical performance of element adverse effect is arranged.
The Taiwan patent announcement also proposes a kind of metal material that utilizes for No. 466569 and forms the reflector to produce the method for temperature gradient on the amorphous silicon membrane surface.It covers a metal pattern on amorphous silicon membrane, and in carrying out laser crystallization technology first heated substrates before, so that substrate temperature is maintained at a particular range.
For fear of the application of foregoing problems restriction low-temperature polysilicon film, how to increase grain size and control crystal grain-growth direction effectively, and then improve the electrical performance of low-temperature polysilicon film LCD, become an important topic.
Summary of the invention
Therefore, purpose of the present invention can be controlled crystal grain and the number of grain boundaries of low-temperature polysilicon film in the element channel zone promptly in the method that a kind of semiconductor element is provided and makes a low-temperature polysilicon film, and then improves the electrical performance of element.
In a preferred embodiment of the invention, at first on a substrate, form an amorphous silicon membrane, then on amorphous silicon membrane, form an isolation layer and a laser absorption layer, and carry out a lithography corrosion process, remove the laser absorption layer of part, isolation layer, to expose the amorphous silicon membrane of part, make this amorphous silicon membrane have the non-exposed region under this isolation layer of this laser absorption layer that keeps and reservation, and exposed region, carry out a laser crystallization technology at last again, so that amorphous silicon membrane changes into a polysilicon membrane, wherein the transverse crystallizing direction is to this exposed region from this non-exposed region.
Because the present invention can utilize laser absorption layer and isolation layer to come the amorphous silicon membrane of cover part, makes the amorphous silicon membrane that is coated with laser absorption layer can not be subjected to laser radiation.Be not subjected to the portion of amorphous silicon film of laser radiation and be subjected to can producing temperature gradient between the other parts amorphous silicon membrane of laser radiation, the crystal grain that impels polysilicon membrane is grown up to the field side ground that irradiating laser is arranged by the zone of irradiating laser not.Therefore, the present invention can come crystal grain and the number of grain boundaries in the control element channel region according to the pattern definition of laser absorption layer and isolation layer, make the element channel zone have bigger crystal grain, and the control element channel region all only has a crystal boundary, promoting the carrier mobility and the uniformity of film crystal, and improve the electrical performance of element.
Description of drawings
Fig. 1 and Fig. 2 make the method schematic diagram of a low-temperature polysilicon film for the present invention.
Fig. 3 is the temperature gradient schematic diagram on the present invention one amorphous silicon membrane surface.
Fig. 4 is the sweep electron microscope photograph of the present invention's one polysilicon membrane surface microstructure.
Fig. 5 is a laser absorption layer material of the present invention for the schematic diagram that concerns of the absorptivity of different wave length laser.
Fig. 6 is the structural representation of semiconductor element of the present invention.
The simple symbol explanation
10 substrates, 11 resilient coatings
12 amorphous silicon membranes, 14 laser completely cut off pattern
16 laser absorption layers, 18 isolation layers
20 excimer laser A channel regions
The non-channel region of B
Embodiment
Please refer to Fig. 1 and Fig. 2, Fig. 1 and Fig. 2 make the method schematic diagram of a low-temperature polysilicon film for the present invention.As shown in Figure 1, the inventive method provides a substrate 10 earlier, for example glass substrate, quartz base plate or plastic base, then on substrate 10, form an amorphous silicon membrane 12 in regular turn, and an isolated pattern 14 of laser that is formed by laser absorption layer 16 and isolation layer 18 is covered in amorphous silicon membrane 12 tops partly.For instance, the present invention can utilize a plasma enhanced chemical vapor deposition method (plasma enhanced chemical vapor deposition, PECVD) successive sedimentation amorphous silicon membrane 12, isolation layer 18 and laser absorption layer 16 on substrate 10.Wherein, the definition of amorphous silicon membrane 12 surface has at least one channel region A, and at least one non-channel region B be arranged at channel region A around.In an embodiment of the present invention, laser absorption layer 16 can be selected from amorphous silicon, polysilicon, metal oxide and (comprises TiO
2, Ta
2O
5, Al
2O
3Or the like), semi-conducting material (comprises SiGe, SiAs, GeAs or the like) and the fire resistance metal (comprise Ti, Al, Pt or the like) group that forms of material such as, and in a preferred embodiment of the invention, laser absorption layer 16 is formed by nonmetallic materials, for example: materials such as amorphous silicon, polysilicon, semi-conducting material, to avoid metallic pollution channel region A.Then, utilize above-mentioned material formation homogenous material layer or the composite layer that has preferred absorbability for excimer laser, and the suggestion of the preferred thickness of laser absorption layer 16 is about 500
Isolation layer 18 is formed by isolated effect preferable material, for example silica (SiO
x), silicon nitride (Si
zN
x), silicon oxynitride (SiO
yN
x), advanced low-k materials (comprising block diamond, FSG, PSG, SiC or the like) or metal oxide (comprise TiO
2, Ta
2O
5, Al
2O
3Or the like), utilize above-mentioned isolated effect preferable material to form homogenous material layer or composite layer, be used for absorbing energy, avoid thermal energy conduction in the laser absorption layer 16 to the amorphous silicon membrane 12 of isolation layer 18 belows, and the suggestion of the preferred thickness of isolation layer 18 be about 1500
The present invention then carries out a dehydrogenation technology again in being higher than 400 ℃ high temperature furnace after forming amorphous silicon membrane 12, isolation layer 18 and laser absorption layer 16, reduce the hydrogen content in the amorphous silicon membrane 12.Carry out a lithography corrosion process afterwards and define the pattern of laser absorption layer 16 and isolation layer 18, for example remove the laser absorption layer 16 and isolation layer 18 that are covered in channel region A, and make the laser absorption layer 16 that residues in the channel region A non-channel region B on every side form the isolated pattern 14 of laser with isolation layer 18.Wherein the isolated pattern 14 of laser is used for avoiding channel region A amorphous silicon membrane 12 surfaces on every side to be subjected to laser radiation and avoids it to absorb the energy that laser produces.
As shown in Figure 2, carry out a laser crystallization technology then, for example use excimer laser 20 irradiation amorphous silicon membranes 12, so that amorphous silicon membrane 12 crystallizations are polysilicon membrane.When carrying out laser crystallization technology, laser absorption layer 16 can produce contraction because of the irradiation of laser, and surface coverage has the amorphous silicon membrane 12 (being the amorphous silicon membrane 12 in the non-channel region B) of the isolated pattern 14 of laser can not be subjected to the irradiation of laser and absorb laser energy, then can directly be exposed in the laser as for the amorphous silicon membrane 12 that does not cover the isolated pattern 14 of laser (being the amorphous silicon membrane 12 in the channel region A).
Please refer to Fig. 3, Fig. 3 is the temperature gradient schematic diagram on the present invention one amorphous silicon membrane surface.As shown in Figure 3, because the insulating effect of the isolated pattern 14 of laser, amorphous silicon membrane 12 can be because the figure difference of the laser absorption layer that defines can form different temperature gradient distribution situations after laser radiation, that is form a high-temperature area at channel region A, and can form a low-temperature region at non-channel region B, so that amorphous silicon membrane 12 carries out lateral growth by low-temperature region to high-temperature area.Refer again to Fig. 4, sweep electron microscope (scanning electron microscope, the SEM) photograph of the polysilicon membrane surface microstructure after Fig. 4 finishes laser crystallization technology for the present invention and removes the isolated pattern of laser.As shown in Figure 4, polysilicon membrane in the channel region A has bigger crystal grain because absorbed laser energy, and only have single crystal boundary, then form less crystal grain and have more crystal boundary because of energy shortage as for the polysilicon membrane in the non-channel region B around the channel region A.Because channel region A of the present invention has bigger crystal grain and single crystal boundary, therefore help to promote the carrier mobility and the uniformity of thin-film transistor, improve the electrical performance of element.
Please refer to Fig. 5, Fig. 5 is a laser absorption layer material of the present invention for the schematic diagram that concerns of the absorptivity of different wave length laser, and wherein the thickness of laser absorption layer is about 500
As shown in Figure 5, when laser absorption layer selected for use amorphous silicon (◇ represents with figure) or polysilicon (representing with grafport) to form, it is the laser of absorbing wavelength below 350nm fully almost.Therefore, for the excimer laser of wavelength below 350nm, for example KrF laser (wavelength is 248nm) and ArF laser (wavelength is 193.3nm) can utilize amorphous silicon or polysilicon to form laser absorption layer, can reach very excellent laser absorption effect.Yet, the present invention does not limit and uses amorphous silicon or polysilicon to form laser absorption layer, in other embodiments of the invention, still can factor such as consider according to electrical demand, laser species and the cost of thin-film transistor selects for use different laser absorption materials to reach desirable laser absorption effect.
In addition, in order to reduce thermal diffusion and isolated amorphous silicon membrane and the glass substrate between amorphous silicon membrane and substrate, in other embodiments of the invention, between amorphous silicon membrane and substrate, form a resilient coating (bufferlayer).Please refer to Fig. 6, Fig. 6 comprises the structural representation of the semiconductor element of resilient coating 11 for the present invention one.In practical application, the position of resilient coating 11 can be located between amorphous silicon membrane 12 and the substrate 10, or be located between amorphous silicon membrane 12 and the isolated pattern 14 of laser, and resilient coating 11 can trim in the isolated pattern 14 of laser, to expose the amorphous silicon membrane 12 of part.In Fig. 6, other element number is identical with element number shown in Figure 1, and its subsequent technique also can not repeat them here referring to Fig. 2.
In addition; the present invention is after finishing aforesaid low-temperature polysilicon film making and removing the isolated pattern of laser; can carry out the transistorized technology of subsequent thin film again; being contained in the low-temperature polysilicon film surface mixes; on low-temperature polysilicon film, form structures such as gate insulator, grid (the first metal layer), interlayer dielectric layer, source/drain polar conductor (second metal level), protective layer and ITO transparency conducting layer, finish the making of low-temperature polysilicon film transistor.
Characteristics of the present invention are before carrying out laser crystallization technology, prior to forming the isolated pattern of laser on the amorphous silicon membrane, comprise structures such as laser absorption layer and isolation layer, with in amorphous silicon membrane surface formation temperature gradient, and then the size and the growth direction of control crystal grain.The present invention can utilize modes such as little shadow and etching to make the isolated pattern covers of laser on the amorphous silicon membrane around the channel region, and can utilize process conditions to adjust shape, thickness and the configuration of the isolated pattern of laser, so that the isolated pattern of laser reaches desirable laser absorption effect, therefore can effectively improve laser crystallization technology in formed grain size of channel region and number of grain boundaries, make the channel region of low-temperature polysilicon film transistor can have bigger crystal grain, and reduce the number of grain boundaries in the channel region.
Method compared to existing making low-temperature polysilicon film, the present invention utilizes laser absorption layer and isolation layer to make the Region control of crystal grain-growth, therefore the present invention can come crystal grain and the number of grain boundaries in the control element channel region according to the pattern definition of laser absorption layer and isolation layer, make the element channel zone have bigger crystal grain, and the control element channel region all only has a crystal boundary, promoting the carrier mobility and the uniformity of low-temperature polysilicon film crystal, and improve the electrical performance of element.
The above only is the preferred embodiments of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to the covering scope of patent of the present invention.
Claims (14)
1, a kind of method of making low-temperature polysilicon film comprises:
One substrate is provided;
Form an amorphous silicon membrane on this substrate;
Form an isolation layer and a laser absorption layer on this amorphous silicon membrane;
Remove this laser absorption layer of part and this isolation layer,, make this amorphous silicon membrane have non-exposed region and the exposed region under this isolation layer of this laser absorption layer that keeps and reservation to expose this amorphous silicon membrane of part; And
Carry out a laser crystallization technology, so that this amorphous silicon membrane changes into a polysilicon membrane, wherein the transverse crystallizing direction is to this exposed region from this non-exposed region.
2, the method for claim 1, wherein this substrate is an insulated substrate.
3, the method for claim 1, it also is included in and forms a resilient coating on this substrate.
4, the method for claim 1, it utilizes a lithography corrosion process to remove this laser absorption layer of part and this isolation layer.
5, the method for claim 1, wherein this isolation layer is selected from the material that silica, silicon nitride, silicon oxynitride, advanced low-k materials and metal oxide are formed.
6, the method for claim 1, wherein this laser absorption layer is selected from the material that amorphous silicon, polysilicon, metal oxide, semi-conducting material and fire resistance metal are formed.
7, the method for claim 1, wherein this exposed region is as channel region.
8, a kind of method of making low-temperature polysilicon film comprises:
One substrate is provided;
Form an amorphous silicon membrane on this substrate;
Form the isolated pattern of a laser, on this amorphous silicon membrane, and expose the channel region part of this amorphous silicon membrane; And
Carry out a laser crystallization technology, so that this amorphous silicon membrane changes into a polysilicon membrane;
Wherein the isolated pattern of this laser is avoided this channel region this amorphous silicon membrane surface on every side to be subjected to laser radiation and is absorbed the energy that laser produces, so that this amorphous silicon membrane surface forms a temperature gradient.
9, method as claimed in claim 8, wherein the isolated pattern of this laser comprises an at least one laser absorption layer and an isolation layer.
10, method as claimed in claim 9, wherein this laser absorption layer is selected from the material that amorphous silicon, polysilicon, metal oxide, semi-conducting material and fire resistance metal are formed.
11, method as claimed in claim 9, wherein this isolation layer is selected from the material that silica, silicon nitride, silicon oxynitride, advanced low-k materials and metal oxide are formed.
12, method as claimed in claim 8, it also is included in and forms a resilient coating on this substrate.
13, method as claimed in claim 8, wherein surface coverage has the temperature of this amorphous silicon membrane of the isolated pattern of this laser not cover the temperature of this amorphous silicon membrane of the isolated pattern of this laser less than the surface.
14, method as claimed in claim 13, wherein this amorphous silicon membrane by around this channel region to this channel region lateral growth, and in this channel region, form bigger crystal grain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100849170A CN100433242C (en) | 2004-10-10 | 2004-10-10 | Method for producing low-temperature polycrystalline silicon thin membrane |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100849170A CN100433242C (en) | 2004-10-10 | 2004-10-10 | Method for producing low-temperature polycrystalline silicon thin membrane |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1614741A CN1614741A (en) | 2005-05-11 |
| CN100433242C true CN100433242C (en) | 2008-11-12 |
Family
ID=34765992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100849170A Active CN100433242C (en) | 2004-10-10 | 2004-10-10 | Method for producing low-temperature polycrystalline silicon thin membrane |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100433242C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106252214A (en) * | 2016-08-31 | 2016-12-21 | 武汉华星光电技术有限公司 | A kind of ion activation method preparing flexible display device |
| CN107424931A (en) * | 2017-04-12 | 2017-12-01 | 浙江大学 | A kind of method for preparing semiconductive thin film FET device |
| CN111106188B (en) * | 2019-12-17 | 2022-03-18 | 晶澳（扬州）太阳能科技有限公司 | N-type battery, preparation method of selective emitter of N-type battery and N-type battery |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5946562A (en) * | 1996-07-24 | 1999-08-31 | International Business Machines Corporation | Polysilicon thin film transistors with laser-induced solid phase crystallized polysilicon channel |
| TW466569B (en) * | 2001-01-04 | 2001-12-01 | Nat Science Council | Method to anneal laterally grown polysilicon from amorphous silicon with patterned metal mask layer by pulse laser |
| CN1338770A (en) * | 2000-06-12 | 2002-03-06 | 精工爱普生株式会社 | Manufacture of film semiconductor device |
| US6432758B1 (en) * | 2000-08-09 | 2002-08-13 | Huang-Chung Cheng | Recrystallization method of polysilicon film in thin film transistor |
| US6555449B1 (en) * | 1996-05-28 | 2003-04-29 | Trustees Of Columbia University In The City Of New York | Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication |
| TW579556B (en) * | 2003-03-28 | 2004-03-11 | Au Optronics Corp | Method of fabricating a low temperature polysilicon film |
| CN1501449A (en) * | 2002-11-12 | 2004-06-02 | 友达光电股份有限公司 | Method for making polysilicon layer |
-
2004
- 2004-10-10 CN CNB2004100849170A patent/CN100433242C/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6555449B1 (en) * | 1996-05-28 | 2003-04-29 | Trustees Of Columbia University In The City Of New York | Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication |
| US5946562A (en) * | 1996-07-24 | 1999-08-31 | International Business Machines Corporation | Polysilicon thin film transistors with laser-induced solid phase crystallized polysilicon channel |
| CN1338770A (en) * | 2000-06-12 | 2002-03-06 | 精工爱普生株式会社 | Manufacture of film semiconductor device |
| US6432758B1 (en) * | 2000-08-09 | 2002-08-13 | Huang-Chung Cheng | Recrystallization method of polysilicon film in thin film transistor |
| TW466569B (en) * | 2001-01-04 | 2001-12-01 | Nat Science Council | Method to anneal laterally grown polysilicon from amorphous silicon with patterned metal mask layer by pulse laser |
| CN1501449A (en) * | 2002-11-12 | 2004-06-02 | 友达光电股份有限公司 | Method for making polysilicon layer |
| TW579556B (en) * | 2003-03-28 | 2004-03-11 | Au Optronics Corp | Method of fabricating a low temperature polysilicon film |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1614741A (en) | 2005-05-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20070290210A1 (en) | Semiconductor device and method of fabricating a ltps film | |
| JP4026182B2 (en) | Semiconductor device manufacturing method and electronic device manufacturing method | |
| US20060043367A1 (en) | Semiconductor device and method of fabricating a low temperature poly-silicon layer | |
| US6916690B2 (en) | Method of fabricating polysilicon film | |
| KR100473996B1 (en) | Cystallization method of amorphous silicon | |
| US6376290B1 (en) | Method of forming a semiconductor thin film on a plastic substrate | |
| US20020056839A1 (en) | Method of crystallizing a silicon thin film and semiconductor device fabricated thereby | |
| EP0806055A1 (en) | Manufacture of electric devices comprising thin-film circuitry on an organic substrate | |
| CN100419952C (en) | Method of fabricating semiconductor device and semiconductor fabricated by the same method | |
| JP2700277B2 (en) | Method for manufacturing thin film transistor | |
| US6806169B2 (en) | Semiconductor device manufacturing method | |
| CN100573831C (en) | Semiconductor device and the method for making a low-temperature polycrystalline silicon layer | |
| CN100433242C (en) | Method for producing low-temperature polycrystalline silicon thin membrane | |
| US7435667B2 (en) | Method of controlling polysilicon crystallization | |
| JP3924828B2 (en) | Method for manufacturing crystalline semiconductor film and method for manufacturing thin film transistor | |
| CN100413016C (en) | Multicrystalline silicon film manufacturing method | |
| Sugawara et al. | Crystallization of double-layered silicon thin films by solid green laser annealing for high-performance thin-film transistors | |
| US6982195B2 (en) | Method of forming poly-silicon crystallization | |
| KR20000027349A (en) | Method for recrystallizing amorphous silicon layer by using selective laser annealing | |
| KR100796607B1 (en) | Poly silicon crystallization method and fabricating method for thin film transistor using the same | |
| JP2000068518A (en) | Manufacture of thin-film transistor | |
| JPH05315361A (en) | Manufacture of semiconductor thin film and semiconductor element | |
| CN100388423C (en) | Manufacturing method of poly-silicon film | |
| KR100611749B1 (en) | Method for fabricating Thin Film Transitor | |
| KR100496138B1 (en) | A method for crystallizing of an amorphous Si |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |